KR102151821B1 - 실리콘 단결정 제조 방법 - Google Patents

실리콘 단결정 제조 방법 Download PDF

Info

Publication number
KR102151821B1
KR102151821B1 KR1020180121041A KR20180121041A KR102151821B1 KR 102151821 B1 KR102151821 B1 KR 102151821B1 KR 1020180121041 A KR1020180121041 A KR 1020180121041A KR 20180121041 A KR20180121041 A KR 20180121041A KR 102151821 B1 KR102151821 B1 KR 102151821B1
Authority
KR
South Korea
Prior art keywords
exhaust port
gas
single crystal
exhaust
silicon single
Prior art date
Application number
KR1020180121041A
Other languages
English (en)
Korean (ko)
Other versions
KR20190042457A (ko
Inventor
타카히로 카네하라
토모카즈 카타노
Original Assignee
가부시키가이샤 사무코
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 가부시키가이샤 사무코 filed Critical 가부시키가이샤 사무코
Publication of KR20190042457A publication Critical patent/KR20190042457A/ko
Application granted granted Critical
Publication of KR102151821B1 publication Critical patent/KR102151821B1/ko

Links

Images

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/14—Heating of the melt or the crystallised materials
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/06—Silicon
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B35/00—Apparatus not otherwise provided for, specially adapted for the growth, production or after-treatment of single crystals or of a homogeneous polycrystalline material with defined structure

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
KR1020180121041A 2017-10-16 2018-10-11 실리콘 단결정 제조 방법 KR102151821B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JPJP-P-2017-200276 2017-10-16
JP2017200276A JP6881214B2 (ja) 2017-10-16 2017-10-16 シリコン単結晶の製造方法

Publications (2)

Publication Number Publication Date
KR20190042457A KR20190042457A (ko) 2019-04-24
KR102151821B1 true KR102151821B1 (ko) 2020-09-03

Family

ID=66142054

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020180121041A KR102151821B1 (ko) 2017-10-16 2018-10-11 실리콘 단결정 제조 방법

Country Status (4)

Country Link
JP (1) JP6881214B2 (zh)
KR (1) KR102151821B1 (zh)
CN (1) CN109666968B (zh)
TW (1) TWI682077B (zh)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2021046344A (ja) * 2019-09-20 2021-03-25 株式会社Sumco 半導体結晶製造装置

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101216313B1 (ko) * 2004-12-13 2012-12-27 사무코 테크시부 가부시키가이샤 반도체단결정제조장치 및 제조방법
JP5561785B2 (ja) 2011-03-25 2014-07-30 グローバルウェーハズ・ジャパン株式会社 シリコン単結晶引上装置及びそれを用いたシリコン単結晶の引上げ方法
JP2016216303A (ja) 2015-05-20 2016-12-22 株式会社デンソー 炭化珪素単結晶製造装置

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH05319976A (ja) 1992-03-19 1993-12-03 Fujitsu Ltd 超低炭素結晶成長装置及びシリコン単結晶の製造方法
JP4128842B2 (ja) * 2002-10-15 2008-07-30 コバレントマテリアル株式会社 シリコン単結晶引上装置
CN101713095A (zh) * 2009-08-18 2010-05-26 芜湖升阳光电科技有限公司 双向气流的硅晶体生长装置
CN201793813U (zh) * 2010-09-28 2011-04-13 常州天合光能有限公司 低能耗单晶热场
KR101111681B1 (ko) * 2010-10-05 2012-02-14 (주)기술과가치 단결정 실리콘 잉곳 제조장치
CN103173849A (zh) * 2011-12-21 2013-06-26 卉欣光电科技（江苏）有限公司 单晶硅制造装置炉室结构
JP6268936B2 (ja) * 2013-11-05 2018-01-31 株式会社Sumco シリコン単結晶製造方法
CN204849115U (zh) * 2015-08-07 2015-12-09 包头市山晟新能源有限责任公司 上排气热场单晶炉

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101216313B1 (ko) * 2004-12-13 2012-12-27 사무코 테크시부 가부시키가이샤 반도체단결정제조장치 및 제조방법
JP5561785B2 (ja) 2011-03-25 2014-07-30 グローバルウェーハズ・ジャパン株式会社 シリコン単結晶引上装置及びそれを用いたシリコン単結晶の引上げ方法
JP2016216303A (ja) 2015-05-20 2016-12-22 株式会社デンソー 炭化珪素単結晶製造装置

Also Published As

Publication number Publication date
JP6881214B2 (ja) 2021-06-02
TW201917237A (zh) 2019-05-01
CN109666968A (zh) 2019-04-23
TWI682077B (zh) 2020-01-11
JP2019073412A (ja) 2019-05-16
KR20190042457A (ko) 2019-04-24
CN109666968B (zh) 2021-02-09

Similar Documents

Publication Publication Date Title
CN105189834B (zh) 冷却速率控制装置及包括其的铸锭生长装置
KR102038925B1 (ko) 실리콘 단결정 제조 방법
KR102095597B1 (ko) 실리콘 단결정의 제조 방법
KR20120083333A (ko) 조절된 압력하에 헬륨을 사용하는 고온 처리 방법
KR102151821B1 (ko) 실리콘 단결정 제조 방법
KR101787504B1 (ko) 실리콘 단결정 제조 방법
TWI689634B (zh) 矽單晶的製造方法
KR101725603B1 (ko) 잉곳 성장장치
KR101528055B1 (ko) 잉곳 성장 장치
KR101871059B1 (ko) 단결정 잉곳 성장장치
KR102315982B1 (ko) 실리콘 단결정 제조 방법 및 실리콘 단결정 인상 장치
KR101383956B1 (ko) 단결정 성장장치
RU2626637C1 (ru) Способ выращивания высокотемпературных монокристаллов методом синельникова-дзиова
US20200199776A1 (en) Method for producing silicon single crystal
KR101330418B1 (ko) 단결정 잉곳 성장방법 및 이에 의해 제조된 웨이퍼
TW202411483A (zh) 矽單晶的育成方法、矽晶圓的製造方法及單晶提拉裝置
KR101222217B1 (ko) 단결정 잉곳 및 그 제조방법과 이를 통해 제조된 웨이퍼
KR20160069151A (ko) 잉곳 성장장치

Legal Events

Date Code Title Description
A201 Request for examination
E902 Notification of reason for refusal
E701 Decision to grant or registration of patent right