KR102141229B1 - Method for fabricating flexible display - Google Patents

Abstract

The method for manufacturing a flexible display according to an embodiment of the present invention includes forming a sacrificial layer on a supporting substrate, forming a passivation layer on a sacrificial layer, forming a flexible film on a pavation layer, and supporting substrate side And irradiating a laser to completely remove the sacrificial layer and separating the supporting substrate from the passivation layer. As a result, it is possible to prevent the ash caused by combustion of the sacrificial layer from being formed on the flexible film.

Description

Manufacturing method of flexible display{Method for fabricating flexible display}

The present invention relates to a method for manufacturing a flexible display.

Recently, as interest in information display has increased and the demand to use a portable information medium has increased, it has been applied to a lightweight flat panel display (FPD) that replaces the existing display device, a cathode ray tube (CRT). Korea's research and commercialization are focused.

Such flat panel display devices include liquid crystal display devices (LCDs), plasma display panels (PDPs), organic light emitting display devices (OLEDs), and quantum dot display devices (Quantum Display Devices) ), an electrophoresis display device, and the like.

In the field of flat panel display devices, a liquid crystal display device (LCD), which has been light and has low power consumption, has been the most popular display device, but the liquid crystal display device is not a light emitting device but a light receiving device and is a brightness and contrast ratio. ratio) and viewing angles, so development of new display devices capable of overcoming these disadvantages has been actively developed.

Since the organic light emitting display device, which is one of the new display devices, is a self-emission type, it has a better viewing angle and contrast ratio than the liquid crystal display device, and since it does not require a backlight, it can be lightweight and thin, and is also advantageous in terms of power consumption. . In addition, it has the advantage of being capable of driving a DC low voltage and having a fast response speed, particularly in terms of manufacturing cost.

In the manufacturing process of the organic light emitting display device, unlike the liquid crystal display device or the plasma display panel (PDP), the deposition and encapsulation process can be said to be all of the process, so the manufacturing process is very simple. In addition, when the organic light emitting display device is driven by an active matrix method having a thin film transistor (TFT), which is a switching element for each pixel, it exhibits the same luminance even when a low current is applied. It has the advantage of being able to be thin and large.

On the other hand, the flat panel display device is generally available in a fixed form, but recently, it is considered to be used in a flexible form, such as an e-book or an electronic paper. In this way, a display device capable of being displayed in a flexible state so as not to be damaged even if it is caught or rolled is called a flexible display.

By the way, the flexible display is a flexible material of the substrate itself, and is very thin. Accordingly, in the process of forming wiring and display electrodes required for display on the substrate, the substrate may be deformed in a specific direction by the heat applied thereto, so that the substrate is attached to a separate support substrate to prevent this, and a deposition process, etc. Proceeds the formation process of.

Meanwhile, a process of separating the substrate from the supporting substrate again is required after the array forming process such as wiring and display electrodes is performed. However, during this separation process, force, heat, or light is irradiated, and in this process, there is a problem that display elements formed on the substrate are damaged.

In addition, due to the low thermal conductivity characteristics of the protective film used for the flexible display device as well as the flexible substrate, heat generated during operation of the elements on the array substrate is not easily released, and thus the current flowing through the panel of the flexible display device is increased due to an increase in the temperature of the array layer. There is a problem of reduction in luminance and afterimage.

In the display elements that are damaged once, a corresponding portion acts as a point defect or a line defect, and thus, conditions in the separation process are factors influencing the yield to prevent this.

Referring to the drawings, a description will be given of a process of separating a substrate from a support substrate in a conventional method for manufacturing a flexible display.

1 and 2 are views illustrating a process of separating a support substrate from a flexible substrate in a flexible display structure in which a sacrificial layer is applied on the support substrate, and FIGS. 2 and 3 are in a flexible display structure in which a sacrificial layer is not applied on the support substrate. It is a view showing a process of separating the supporting substrate from the flexible substrate.

Referring to FIG. 1, a sacrificial layer 20 is formed on the support substrate 10, a flexible film 30 on the sacrificial layer 20, and a buffer layer 40 and each on the flexible film 30. An array layer 50 including a thin film transistor constituting a pixel and an organic light emitting device is formed.

The flexible film 30, the buffer layer 40 and the array layer 50 may be collectively referred to as a flexible substrate 60.

When the laser is irradiated on the support substrate 10 in the direction of the arrow in the drawing, light is transmitted to the sacrificial layer 20 through the transparent support substrate 10, the sacrificial layer 20 and the flexible substrate 60 ) The interface uniformity of the interface is lowered or hydrogen is generated at the interface between the) to weaken the bonding energy of the interface, and the flexible substrate 60 can be separated from the support substrate 10.

At this time, due to moisture diffusion in the flexible substrate 60, damage to the cathode electrode in the organic light emitting element through the array layer 50 was caused, so that the organic light emitting element did not emit light.

3 and 4, a flexible film 30 is formed on the support substrate 10, a buffer layer 40, an array layer 50, and the array layer 50 are formed on the flexible film 30.

When the laser is irradiated on the support substrate 10 in the direction of the arrow, the light passing through the transparent support substrate 10 is ash (ie, various types) on the back surface (shown as hatched in the drawing) of the flexible film 30. As the powder remaining after burning the material) is formed, the support substrate 10 and the flexible substrate 60 are separated from each other.

At this time, since the ash is formed on one surface of the flexible substrate 60 facing the support substrate 10, there is a problem that the surface uniformity of the flexible film 30 included in the flexible substrate 60 is lowered.

An embodiment of the present invention is to manufacture a flexible display device capable of preventing an ash from being formed on the flexible film by burning a sacrificial layer coated on a support substrate and protecting the flexible film using a passivation layer. You can provide a method.

In addition, through the passivation layer, the sacrificial layer and the flexible film do not directly contact each other, that is, through the protective role of the passivation layer, it is possible to prevent the problem of water penetration into the lower portion of the flexible film during the separation process of the supporting substrate. A method of manufacturing a flexible display device can be provided.

In addition, the heat generated during the operation of the elements on the array substrate can be easily discharged to the passivation layer, which can solve problems such as luminance reduction and residual image due to a decrease in current flowing through the panel of the flexible display device due to an increase in the temperature of the array layer. A method of manufacturing a flexible display device can also be provided.

A method of manufacturing a flexible display according to an embodiment of the present invention includes forming a sacrificial layer on a support substrate, forming a passivation layer on the sacrificial layer, and forming a flexible film on the passivation layer. And irradiating a laser to the support substrate to completely remove the sacrificial layer by burning, and separating the support substrate from the passivation layer. Here, the sacrificial layer has a thickness thinner than the flexible film, polyethylene terephthalate (Ployethylene Terephthalate, PET), polycarbonate (polycarbonate, PC), polyimide (polyimide, PI), polyethylene naphthalate (Polyethylene Naphthalate, PEN) ), COC (Cyclic olefin Copolymer), acrylic (Acryl).

The support substrate may have a higher hardness and more transparent than the flexible film.

The passivation layer may be formed by coating a material obtained by mixing at least one of silicon nitride (SiNx) or aluminum oxide (AlOx)-based materials on the support substrate.

The passivation layer may be made of a material in which at least one of silicon oxide (Silicon Oxide), silicon nitride (Silicon Nitride), or aluminum oxide (Aluminum Oxide) is mixed.

The flexible film includes polyethylene terephthalate (PET), polycarbonate (PC), polyimide (PI), polyethylene naphthalate (PEN), cyclic olefin copolymer (COC), acrylic (acrylic) Acryl).

The sacrificial layer may be made of the same material as the flexible film.

The sacrificial layer may have a maximum thickness of 3um.
The wavelength of the laser may be 308 nm or more and 355 nm or less.

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The method for manufacturing a flexible display according to an embodiment of the present invention may further include forming an array on the flexible film prior to separating the support substrate from the passivation layer.

In the step of forming the array, a pixel region on a matrix may be divided on the flexible film to form a thin film transistor and an organic light emitting device connected to the thin film transistor in each pixel region.

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A method of manufacturing a flexible display device according to an exemplary embodiment of the present invention burns a sacrificial layer that is very thinly coated on a supporting substrate and protects the flexible film using a passivation layer, so that no ash is formed on the flexible film. It is possible to prevent the sacrificial layer from being in direct contact with the flexible film through the passivation layer, that is, through the protective role of the passivation layer, to prevent the problem of moisture penetration into the lower portion of the flexible film during the separation process of the supporting substrate. The heat generated during the operation of the elements on the array substrate can be easily discharged to the passivation layer, thereby increasing the temperature of the array layer to reduce the luminance and afterimage caused by the decrease in current flowing through the panel of the flexible display device. Can be solved.

1 and 2 are views illustrating a process of separating a support substrate from a flexible substrate in a flexible display structure in which a sacrificial layer is applied on the support substrate.
3 and 4 are views illustrating a process of separating the supporting substrate from the flexible substrate in the flexible display structure without the sacrificial layer applied to the upper portion of the supporting substrate.
FIG. 5 is a view showing before the support substrate is separated from the flexible substrate in the flexible display according to the embodiment of the present invention.
6 is a view after separating a supporting substrate from a flexible substrate in the flexible display according to the embodiment of the present invention.
7 is a view showing the structure of an organic light emitting device.
8 is an equivalent circuit diagram for one pixel, and shows an equivalent circuit diagram for the active matrix method.
9 is a view for explaining a first step of a method of manufacturing a flexible display according to an embodiment of the present invention.
10 is a view for explaining a second step of a method of manufacturing a flexible display according to an embodiment of the present invention.
11 is a view for explaining a third step of a method of manufacturing a flexible display according to an embodiment of the present invention.
12 is a view for explaining a fourth step of a method of manufacturing a flexible display according to an embodiment of the present invention.
13 is a view for explaining a fifth step of a method of manufacturing a flexible display according to an embodiment of the present invention.
14 is a view for explaining a sixth step of a method of manufacturing a flexible display according to an embodiment of the present invention.
15 is a view for explaining a seventh step of a method of manufacturing a flexible display according to an embodiment of the present invention.

Hereinafter, with reference to the drawings of a method of manufacturing a flexible display according to an embodiment of the present invention will be described in detail. The embodiments introduced below are provided as examples in order to sufficiently convey the spirit of the present invention to those skilled in the art. Accordingly, the present invention is not limited to the embodiments described below and may be embodied in other forms. In addition, in the drawings, the size and thickness of the device may be exaggerated for convenience. Throughout the specification, the same reference numbers indicate the same components.

<Structure of flexible display according to an embodiment>

Hereinafter, the structure of the flexible display according to the embodiment of the present invention will be described.

FIG. 5 is a view showing before the support substrate is separated from the flexible substrate in the flexible display according to the embodiment of the present invention.

Looking at the structure before separation of the support substrate 110 of the flexible display 100 according to an embodiment of the present invention, the flexible display 100 according to an embodiment of the present invention includes a support substrate 110, an upper portion of the support substrate 110 The sacrificial layer 120 disposed on the surface, the passivation layer 130 disposed on the sacrificial layer 120, the flexible film 140 disposed on the passivation layer 130, and the flexible film ( A buffer layer 150 disposed on 140 and an array 160 disposed on the buffer layer 150 may be included.

The array 160 may include a thin film transistor and an organic light emitting device connected to the thin film transistor in each pixel area.

6 is a view after separating a supporting substrate from a flexible substrate in the flexible display according to the embodiment of the present invention.

Looking at the structure after separation of the support substrate 110 of the flexible display 100 according to an embodiment of the present invention, the flexible display 100 according to an embodiment of the present invention includes a passivation layer 130 and the passivation layer 130 ), the flexible film 140, the buffer layer 150 disposed on the flexible film 140, and the array 160 disposed on the buffer layer 150.

While the support substrate 110 is attached to the flexible substrate 200, the laser is irradiated, and the sacrificial layer 120 is burned by the laser, while the support substrate 110 can be separated from the flexible substrate 200. .

7 is a view showing the structure of an organic light emitting device.

The organic light emitting device 161 will be described in detail with reference to FIG. 7.

The array 160 may include an organic light emitting element 161 and a pixel 162 including a thin film transistor.

The organic light emitting device 161 may be made of organic materials that emit red, green, and blue light.

The organic light emitting device 161 may be formed using a vacuum deposition method, a laser thermal transfer method, a screen printing method, an inkjet printing method, a joule heating transfer method, or the like.

The organic light emitting device 161 includes organic compound layers 330, 340, 350, 360, and 370 formed between an anode 310 as a pixel electrode and a cathode 320 as a common electrode.

At this time, the organic compound layer (330, 340, 350, 360, 370) is a hole injection layer (hole injection layer) 330, a hole transport layer (hole transport layer) 340, the emission layer (emission layer) 350, electrons It includes a transport layer (electron transport layer) 360 and an electron injection layer (electron injection layer) (370).

The hole injection layer 330 may serve to facilitate the injection of holes, and CuPc (cupper phthalocyanine), PEDOT (poly(3,4)-ethylenedioxythiophene), PANI (polyaniline), and NPD (N,N-dinaphthyl) -N,N'-diphenyl benzidine).

The hole transport layer 340 serves to facilitate the transport of holes, and NPD (N, N-dinaphthyl-N, N'-diphenyl benzidine), TPD (N, N'-bis-(3-methylphenyl)-N ,N'-bis-(phenyl)-benzidine), s-TAD and MTDATA(4,4',4"-Tris(N-3-methylphenyl-N-phenyl-amino)-triphenylamine) It may be made of one or more, but is not limited thereto.

The light emitting layer 350 may include a material that emits red, green, blue, and white, and uses phosphorescent or fluorescent materials.

Can form. When the emission layer 350 emits red, it includes a host material including CBP (carbazole biphenyl) or mCP (1,3-bis (carbazol-9-yl), and PIQIr(acac) (bis(1-phenylisoquinoline) ) Dopant containing any one or more selected from the group consisting of acetylacetonate iridium), PQIr(acac)(bis(1-phenylquinoline)acetylacetonate iridium), PQIr(tris(1-phenylquinoline)iridium), and octaethylporphyrin platinum (PtOEP) It may be made of a phosphor, and, alternatively, may be made of a fluorescent material including PBD:Eu(DBM)3(Phen) or Perylene, but is not limited thereto.

When the light-emitting layer 350 emits green, it contains a host material including CBP or mCP, and is a phosphor containing a dopant material including Ir(ppy)3 (fac tris(2-phenylpyridine)iridium). It may be made, or, alternatively, may be made of a fluorescent material including Alq3 (tris(8-hydroxyquinolino)aluminum), but is not limited thereto.

When the light emitting layer 350 emits blue light, it may include a host material including CBP or mCP, and may be made of a phosphor material including a dopant material including (4,6-F2ppy)2Irpic. Unlike this, spiro-DPVBi, spiro-6P, distyl benzene (DSB), distriarylene (DSA), PFO-based polymer and PPV-based polymer may be made of a fluorescent material including any one selected from the group consisting of It is not limited.

The electron transport layer 360 serves to facilitate the transport of electrons, and may be formed of any one or more selected from the group consisting of Alq3 (tris(8-hydroxyquinolino)aluminum), PBD, TAZ, spiro-PBD, BAlq, and SAlq. However, it is not limited thereto.

The electron injection layer 370 serves to facilitate the injection of electrons, and may use, but is not limited to, Alq3 (tris(8-hydroxyquinolino)aluminum), PBD, TAZ, spiro-PBD, BAlq or SAlq.

The upper electrode is formed on the organic compound layers 330, 340, 350, 360, and 370. The upper electrode may be selected as the cathode electrode 310 or the anode electrode 320.

When the upper electrode is selected as the cathode electrode 310, it may be made of aluminum (Al), silver (Ag), magnesium (Mg), calcium (Ca), or an alloy thereof, as metals having a low work function.

When a driving voltage is applied to the cathode electrode 310 or the anode electrode 320, holes passing through the hole transport layer 340 and electrons passing through the electron transport layer 360 are moved to the light emitting layer 350 to form excitons. As a result, the light emitting layer 350 emits visible light.

The array 160 displays an image by arranging the pixels 162 having the organic light emitting elements 161 in a matrix form (see FIG. 8) and selectively controlling the pixels with a data voltage and a scan voltage.

The array 160 is divided into a passive matrix method or an active matrix method using a TFT as a switching element.

Among them, the active matrix method selects a pixel by selectively turning on a TFT, which is an active element, and maintains light emission of the pixel at a voltage maintained in a storage capacitor.

8 is an equivalent circuit diagram for one pixel, and shows an equivalent circuit diagram for the active matrix method.

Referring to FIG. 8, the pixel 162 includes an organic light emitting diode (OLED), a data line (DL) and a gate line (GL) intersecting each other, a switching TFT (SW), a driving TFT (DR), and a storage capacitor (Cst). ).

At this time, the switching TFT SW is turned on in response to the scan pulse from the gate line GL to conduct a current path between its source and drain electrodes.

During the on-time period of the switching TFT SW, the data voltage from the data line DL passes through the source and drain electrodes of the switching TFT SW and the gate electrode and storage capacitor Cst of the driving TFT DR. Is applied to.

At this time, the driving TFT DR controls the current flowing through the organic light emitting diode OLED according to the data voltage applied to its gate electrode. Then, the storage capacitor Cst stores the voltage between the data voltage and the low potential power supply voltage VSS, and then keeps it constant for one frame period.

The structure of the flexible display according to the embodiment of the present invention has been described, and the manufacturing method of the flexible display according to the embodiment of the present invention will be described below.

<The manufacturing method of the flexible display according to the embodiment>

9 to 15 are views for explaining a method of manufacturing a flexible display according to an embodiment of the present invention.

In the manufacturing method of the flexible display according to the embodiment of the present invention, the step of separating the flexible substrate from the support substrate may be composed of seven steps below.

As a first step, referring to FIG. 9, a sacrificial layer 120 may be formed on the support substrate 110.

As a second step, referring to FIG. 10, a passivation layer 130 may be formed on the sacrificial layer 120.

As a third step, referring to FIG. 11, a flexible film 140 may be formed on the pavation layer 130.

As a fourth step, referring to FIG. 12, a buffer layer 150 may be formed on the flexible film 140.

As a fifth step, referring to FIG. 13, an array 160 may be formed on the buffer layer 150.

As a sixth step, referring to FIG. 14, the laser may be irradiated to the support substrate 110 in an arrow direction.

As a seventh step, referring to FIG. 15, the sacrificial layer 120 may be removed through laser irradiation to separate the support substrate 110 from the passivation layer 130, that is, from the flexible substrate 200. .

Let's look at each step in detail.

<Step 1>

In the first step, looking at the step of forming the sacrificial layer 120 on the support substrate 110 after the support substrate 110 is provided, the support substrate 110 has a higher hardness than the flexible film 140 It can be transparent.

That is, the support substrate 110 is transparent, such as a glass substrate, it is preferable to select a material having a hardness sufficient to support the flexible film 140 to be formed later by maintaining a constant thickness.

Subsequently, 3 [um; Micrometer] A sacrificial layer 120 made of a polyimide material, for example, which may have the same material as the flexible film 140 to be described later with a thickness of less than or equal to it.

The sacrificial layer 120 may be formed on the support substrate 110 using a coating method.

<Step 2>

In the second step, looking at the step of preparing the support substrate 110 on which the sacrificial layer 120 is formed and shaping the passivation layer 130 on the sacrificial layer 120, the passivation layer 130 Silver may be made of silicon nitride (SiNx) or aluminum oxide (AlOx)-based material.

Specifically, the passivation layer 130 may be formed by depositing a mixture of at least one of silicon oxide, silicon nitride, or aluminum oxide.

<Step 3>

As a third step, looking at the step of forming the flexible film 140 on the pavation layer 130, the flexible film 140 may be a transparent plastic film, imparting ductility and excellent resilience material, for example, polyethylene Terephthalate (PET), polycarbonate (PC), polyimide (PI), polyethylene naphthalate

Late (Polyethylene Naphthalate, PEN), COC (Cyclic olefin Copolymer), or any one of acrylic (Acryl) can be used. In some cases, a thin metal foil such as steel use stainless (SUS) may be used.

In addition, the flexible film 140 may be made of the same material as the sacrificial layer 120 in step 1, but may be thicker than the sacrificial layer 120 in terms of thickness.

It is preferable that the sacrificial layer has a thickness of 3 μm or less. In addition, the flexible film has a thickness of 3 μm or more, but is not limited thereto, and may be changed in consideration of the size and thickness of the applied product and the degree of bending.

<Step 4>

As a fourth step, a buffer layer 150 may be formed on the flexible film 140.

The buffer layer 150 may be formed to protect the thin film transistor formed in a subsequent process from impurities such as alkali ions flowing out from the flexible film 140 or heat of the laser.

The buffer layer 150 may be formed of silicon oxide (SiOx), silicon nitride (SiNx), or the like, and may be omitted.

When the buffer layer 150 is formed on the flexible film 140, the array 160 that is subsequently formed may be formed on the buffer layer 150.

<Step 5>

Looking at the step of forming the array 160 on the flexible film 140 in step 5, for example, by dividing the pixel regions on the matrix on the flexible film 140, the thin film transistor and the thin film transistor in each pixel region It can be made by forming an organic light emitting device connected to the.

The thin film transistor may include a switching transistor that transfers a data signal by switching a scan signal, a storage capacitor that stores the data signal as a data voltage, and a driving transistor that generates a driving current based on the data voltage stored in the storage capacitor. In addition, a compensation transistor or the like that compensates for driving characteristics of the driving transistor may be further formed on the thin film transistor. Accordingly, the thin film transistor may be formed of 3T1C, 4T2C, 5T2C, etc. by further including a compensation transistor or a capacitor as well as a typical 2T (Transistor) 1C (Capacitor).

In addition, the organic light emitting device may include a lower electrode, an organic light emitting layer, and an upper electrode, and the organic light emitting layer may include a hole injection layer, a hole transport layer, a light emitting layer, an electron transport layer, and an electron injection layer, which have different functional layers depending on the structure. The structure of the flexible display may be further added or at least one of a hole injection layer, a hole transport layer, an electron transport layer, and an electron injection layer may be omitted.

In addition, a protective film (not shown) may be further formed on the flexible film 140 to cover the array 160.

The protective film protects the elements including the organic light emitting element from moisture or outside air. The protective film may be one of an organic protective film, an inorganic protective film and an organic-inorganic protective film.

In this case, an example in which an organic light emitting display array is formed has been described. In addition, any type of electrophoretic display array, liquid crystal display array, or other array that can be formed on a flexible film may be changed.

In any case, after forming the array, it is preferable that the flexible substrate 200 is not deformed by heat, light, pressure, etc. applied in the process of separating the support substrate 110 from the supporting substrate 110. If a liquid crystal having a heat transfer temperature is used, such as a liquid crystal display array, the separation process is performed under conditions other than heat.

<Step 6>

As a sixth step, looking at the step of irradiating the laser to the support substrate 110 side, the wavelength of the irradiated laser is preferably used in a range of 308nm or more and 355nm or less.

As the device for irradiating the laser, equipment such as DPSSFD (Diode Pumped Solid State Frequency-Doubled) can be used. However, the laser irradiation is not limited to the DPSSFD equipment, and if the laser light of the above-described wavelength band can be irradiated, it may be changed to other equipment. However, in the method of manufacturing a flexible display according to an embodiment of the present invention, there is an advantage in that energy intensity and time can be reduced compared to a method of separating a flexible display only by laser irradiation.

<Step 7>

As a seventh step, looking at the step of separating the support substrate 110 from the passivation layer 130 by removing the sacrificial layer 120 through laser irradiation, the sacrificial layer 120 can be burned by a laser.

At this time, since the thickness of the sacrificial layer 120 is 3 μm or less, the sacrificial layer 120 may be completely changed to ash, that is, ash, while being burned.

Accordingly, the support substrate 110 may be separated from the passivation layer 130, that is, the flexible substrate 200.

According to an embodiment of the present invention has the following effects.

First, by burning the sacrificial layer 120 coated on the support substrate 110 very thinly, and protecting the flexible film 140 using the passivation layer 130, the ash is deposited on the flexible film 140. It can be prevented from being formed.

Second, the process of separating the supporting substrate 110 through the protective role of the passivation layer 130 so that the sacrificial layer 120 and the flexible film 140 do not directly contact the passivation layer 130. At the bottom of the flexible film 140, moisture penetration may be prevented.

Third, the heat generated during the operation of the elements on the substrate of the array 160 is easily discharged to the passivation layer 130 so that the temperature of the array 160 layer increases and the luminance according to the decrease in the current flowing through the panel of the flexible display device Problems such as reduction and afterimage can be solved.

In the detailed description of the present invention described above, the present invention has been described with reference to preferred embodiments of the present invention, but those skilled in the art or those skilled in the art will appreciate the invention described in the claims below. It will be understood that various modifications and changes may be made to the present invention without departing from the spirit and technical scope. Therefore, the technical scope of the present invention should not be limited to the contents described in the detailed description of the specification, but should be defined by the claims.

10 support substrate
20 sacrificial layer
30 flexible film
40 buffer layer
50 array layers
60 flexible substrate
100 flexible display
110 support substrate
120 sacrificial layer
130 passivation layer
140 flexible film
150 buffer layer
160 array
161 organic light emitting diode
162 pixels
200 flexible substrate
310 cathode electrode
320 anode electrode
330 hole injection layer
340 hole transport layer
350 emitting layer
360 electron transport layer
370 electron injection layer

Claims (13)

Forming a sacrificial layer on the support substrate;
Forming a passivation layer on the sacrificial layer;
Forming a flexible film on the passivation layer; And
Including the step of separating the support substrate from the passivation layer by completely burning the sacrificial layer by irradiating a laser to the support substrate side, including,
In the step of forming the sacrificial layer, the sacrificial layer has a thickness thinner than the flexible film, polyethylene terephthalate (Ployethylene Terephthalate, PET), polycarbonate (polycarbonate, PC), polyimide (polyimide, PI), polyethylene A method for manufacturing a flexible display made of any one of polyethylene naphthalate (PEN), cyclic olefin copolymer (COC), and acryl. According to claim 1,
The support substrate is a flexible display manufacturing method that is higher in hardness and transparent than the flexible film. According to claim 1,
In the step of forming the passivation layer, the passivation layer is a flexible display manufacturing method comprising coating a material obtained by mixing at least one of silicon nitride (SiNx) and aluminum oxide (AlOx)-based materials on the support substrate . According to claim 1,
In the step of forming the passivation layer, the passivation layer is made of a material in which at least one of silicon oxide (Silicon Oxide), silicon nitride (Silicon Nitride), and aluminum oxide (Aluminum Oxide) is mixed. . According to claim 1,
In the step of forming the flexible film, the flexible film includes polyethylene terephthalate (PET), polycarbonate (PC), polyimide (PI), polyethylene naphthalate (PEN), A method for manufacturing a flexible display using any one of cyclic olefin copolymer (COC) and acryl. The method of claim 5,
The sacrificial layer is a flexible display manufacturing method composed of the same material as the flexible film. The method of claim 5
The sacrificial layer is a flexible display manufacturing method having a thickness of up to 3um. delete According to claim 1,
The laser has a wavelength of 308 nm or more and 355 nm or less. According to claim 1,
Before the step of separating the support substrate from the passivation layer,
A method for manufacturing a flexible display, further comprising forming an array on the flexible film. The method of claim 10,
In the step of forming the array,
A method of manufacturing a flexible display by dividing a pixel region on a matrix on the flexible film and forming a thin film transistor and an organic light emitting device connected to the thin film transistor in each pixel region.
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