KR101902414B1 - Organic electro-luminescent Device and method of fabricating the same - Google Patents

Abstract

The present invention provides a plasma display panel comprising: a first electrode formed on a first substrate; An insulating layer including a fluorescent dopant on the first electrode and having a plurality of openings; A fluorescent layer formed on the first electrode corresponding to a plurality of openings provided in the insulating layer; An organic light emitting layer formed on the fluorescent layer; And a second electrode formed on the insulating layer and the organic light-
And an organic electroluminescent device comprising the same.

Description

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an organic electroluminescent device and a method of fabricating the same,

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an organic electroluminescent device, and more particularly, to a white light emitting organic electroluminescent device having a stable whiteness purity and simplifying a manufacturing process and a method of manufacturing the same.

An organic electroluminescent device, which is one of flat panel displays (FPDs), has high luminance and low operating voltage characteristics. In addition, since it is a self-luminous type that emits light by itself, it has a large contrast ratio, can realize an ultra-thin display, can realize a moving image with a response time of several microseconds (μs), has no viewing angle limit, And it is driven with a low voltage of 5 V to 15 V direct current, so that it is easy to manufacture and design a driving circuit.

In addition, since the manufacturing process of the organic electroluminescent device is all the deposition and encapsulation equipment, the manufacturing process is very simple.

Accordingly, the organic electroluminescent device having the above advantages is used in various IT devices such as a TV, a monitor, and a mobile phone when it is realized in full color. Further, in the case of implementing only white light, And is widely applied.

Hereinafter, the basic structure of the organic electroluminescent device will be described in more detail.

1 is a schematic cross-sectional view of one pixel region of a conventional organic electroluminescent device.

The organic electroluminescent device 1 comprises a substrate 10 for an organic electroluminescent device having an array element and an organic electroluminescent diode E and an opposing substrate 70 for encapsulation opposite thereto.

The array element included in the organic EL device substrate 10 includes a switching thin film transistor (not shown) connected to a gate and a data line, and a driving thin film transistor DTr connected to the organic light emitting diode E And the organic electroluminescent diode E comprises a first electrode 47 connected to the driving thin film transistor DTr and an organic light emitting layer 55 and a second electrode 58.

In the organic electroluminescent device 1 having such a configuration, light generated from the organic light emitting layer 55 is emitted toward the first electrode 47 or the second electrode 58 to display an image. In consideration of the aperture ratio and the like, the organic electroluminescent device 1 is generally manufactured by a top emission type in which an image is displayed using light emitted toward the second electrode 58.

On the other hand, the organic electroluminescent device 1 having the above-described configuration is configured to be used as a display device for displaying an image of a full color such as a moving picture by realizing a full color. When the organic electroluminescent device 1 is used as a backlight or illumination, The first electrode 47, the organic light emitting layer 55, and the second electrode 58 may be omitted by omitting the switching and driving thin film transistors (not shown).

When the organic electroluminescent device 1 is made to emit white light, purity of color, stability of color, stability of color according to current and voltage are very important factors, and research and development have been conducted in various ways.

On the other hand, in the case of an organic electroluminescent device emitting white light (hereinafter referred to as a white organic electroluminescent device), white light is expressed in various ways. That is, in order to display white light, the organic luminescent layers that emit red, green, and blue are stacked in a multilayer structure, or the red, green, and blue luminescent layers are sequentially formed as shown in FIG. And the white light is made to be white.

However, since a conventional white organic electroluminescent device having such a structure requires a multilayer of a fluorescent layer or an organic light emitting layer emitting different colors in addition to at least one organic light emitting layer, the manufacturing method is complicated, It is becoming a factor to raise the cost.

Accordingly, there is a need for a white organic electroluminescent device and a method for manufacturing the same, which can reduce the defective rate while simplifying the process.

SUMMARY OF THE INVENTION The present invention has been conceived to solve the problems described above, and it is an object of the present invention to provide a white organic electroluminescent device having a single organic luminescent layer that emits white to simplify a manufacturing process and reduce a defective rate, The present invention is directed to providing a method for providing a service to a user.

According to an aspect of the present invention, there is provided an organic electroluminescent device comprising: a first electrode formed on a first substrate; An insulating layer including a fluorescent dopant on the first electrode and having a plurality of openings; A fluorescent layer formed on the first electrode corresponding to a plurality of openings provided in the insulating layer; An organic light emitting layer formed on the fluorescent layer; And a second electrode formed on the insulating layer and the organic light emitting layer.

At this time, the first electrode and the second electrode are each formed in a plate shape.

The first electrode may be formed at a predetermined distance from the first electrode, and the second electrode may be formed in a plate shape. The insulating layer may overlap the edge of the pixel electrode in the spacing region of the first electrode. . In this case, a gate wiring and a data wiring are formed on the first substrate to define a plurality of pixel regions intersecting with each other, power wiring is formed in parallel to the data wiring, and a driving thin film transistor and a switching And the first electrode is formed in contact with the drain electrode of the driving thin film transistor for each pixel region.

The dopant that fluoresces red may be at least one selected from the group consisting of DCM, DCM2, DCJT, DCJTB, PtOEP, Eu (DBM) 3 ( PqIr, Rubrene, Btp2Ir (acac), Ir (MDQ) 2 (acac), Ir (DBQ) 2 (acac), and PQIr. The green fluorescence dopant is C545T (DME), DMQA, DBQA, TMDBQA, Ir (ppy) 3 and Ir (ppy) ₂ (acac), and the dopant for fluorescent yellow is rubrene or BTX .

The organic light emitting layer is a material emitting light of any one of blue, red, and green.

The first electrode is made of indium-tin-oxide having a relatively high work function value and functions as an anode electrode. The second electrode has a relatively low work function value such as aluminum (Al), aluminum alloy (AlNd) , Silver (Ag), magnesium (Mg), gold (Au), aluminum magnesium alloy (AlMg), or two or more materials.

In this case, a hole injecting layer and a hole transporting layer are sequentially formed between the first electrode and the fluorescent layer, or one of the two layers is formed, and between the organic light emitting layer and the second electrode, an electron transporting layer and an electron injecting layer Layers are successively laminated, or one of these two layers is formed.

In addition, the second electrode is provided with an organic film or an inorganic film over the second electrode, or the second substrate is attached with the seal pattern interposed between the second electrode and the face seal.

A method of fabricating an organic electroluminescent device according to an embodiment of the present invention includes: forming a first electrode on a first substrate; Forming an insulating layer on the first electrode, the insulating layer being made of an insulating material including a fluorescent dopant; Jetting the ink, which is spaced apart by a predetermined distance corresponding to the insulating layer and made of a solvent for dissolving the organic luminescent material and the insulating layer, by a predetermined distance using an ink jet apparatus; The ink jetted on the insulating layer reacts with the insulating layer to form an opening exposing the first electrode and a fluorescent dopant contained in the insulating layer is laminated on the first electrode to form a fluorescent layer Forming an organic light emitting layer on the fluorescent layer; And forming a second electrode over the insulating layer and the organic light emitting layer.

At this time, the insulating material constituting the insulating layer is any one of P4P, PVA and PMMA, and the solvent for dissolving the insulating layer is any one of chloroform, ethylene dichloride and acetone.

The first electrode and the second electrode are each formed in a plate shape, and the opening is formed on the first electrode at a predetermined interval.

The first electrodes are spaced apart from each other at a predetermined interval, and the second electrodes are formed as a single plate. In this case, before the first electrodes are formed on the first substrate, Wherein a gate line and a data line for defining a plurality of pixel regions are formed, and at the same time, a driving thin film transistor and a switching thin film transistor are formed in each pixel region, And is formed so as to be in contact with the electrode.

In addition, a hole injecting layer and a hole transporting layer may be sequentially formed between the first electrode and the fluorescent layer, or one of the two layers may be formed, and an electron transporting layer and an electron injecting layer may be interposed between the organic emitting layer and the second electrode. Layers are successively laminated, or one of these two layers is formed.

Then, an organic film or an inorganic film is formed on the second electrode, or the second substrate is attached to the second electrode through a face seal, or a seal pattern or a frit is formed along the edge of the first substrate. .

In the white organic electroluminescent device according to the present invention, an insulating layer containing a red dopant is formed on the first electrode, and ink mixed with a blue dopant containing a solvent for dissolving the insulating layer is selectively jetted using an ink jet apparatus A phosphor layer formed by melting the insulating layer to expose the first electrode and including a red (or yellow or green) dopant in the hole, and a phosphor layer including blue (or may be red or green) The organic light emitting layer including the pigment is formed, the insulating layer is formed into a bank without additional patterning, and the phosphor layer and the organic light emitting layer, which emit white light, are formed at once to simplify the manufacturing process.

Further, the white organic electroluminescent device according to the present invention includes only a phosphor layer containing a dopant of a specific color and an organic luminescent layer that emits one color to display white, thereby forming a large number of conventional organic luminescent layers, There is an effect of simplifying the structure of the conventional organic electroluminescent device including the organic light emitting layer emitting three different colors in the pixel region, thereby reducing the manufacturing cost.

Even if an ink containing a pigment of a specific color is jetted by using an ink jet apparatus to form an organic light emitting layer, there arises no problem such that a phosphor layer of a specific color located under the organic light emitting layer is scraped off, It is effective.

1 is a schematic cross-sectional view of one pixel region of a conventional organic electroluminescent device.
2 is a cross-sectional view of a portion of a display region of an organic electroluminescent device according to an embodiment of the present invention.
3 is a cross-sectional view of a part of an organic electroluminescent device according to a first modification of the embodiment of the present invention.
4 is a cross-sectional view of a portion of an organic electroluminescent device according to a second modification of the embodiment of the present invention.
Therefore, the manufacturing method therefor is omitted.
5A to 5G are cross-sectional views illustrating steps of manufacturing a white organic electroluminescent device according to an embodiment of the present invention.
FIGS. 6A to 6C are cross-sectional views illustrating steps of manufacturing a single pixel region in a step of forming a fluorescent layer and an organic light-emitting layer in the manufacturing process of a white organic electroluminescent device according to an embodiment of the present invention;

Hereinafter, preferred embodiments according to the present invention will be described in detail with reference to the drawings.

FIG. 2 is a cross-sectional view of a portion of a display region of an organic electroluminescent device according to an embodiment of the present invention. For convenience of description, a region where a driving thin film transistor DTr is formed is referred to as a driving region DA, Although not shown, a region where switching thin film transistors (not shown) are formed in each pixel region P is defined as a switching region (not shown).

The organic EL device 101 according to the embodiment of the present invention includes a first substrate 110 on which a driving and switching thin film transistor DTr (not shown) and an organic light emitting diode E are formed, And a second substrate 170 for encapsulation. At this time, the second substrate 170 may be omitted by being replaced with an inorganic film or an organic film having a multilayer structure.

First, the structure of the first substrate 110 including the driving and switching thin film transistor DTr (not shown) and the organic electroluminescent diode E will be described.

The driving region DA and the switching region (not shown) on the first substrate 110 are respectively formed of pure polysilicon and the central portion thereof includes a first region 113a and a second region 113b. And a second region 113b doped with impurities at a high concentration on both sides of the semiconductor layer 113a.

At this time, a buffer layer (not shown) made of an inorganic insulating material such as silicon oxide (SiO ₂ ) or silicon nitride (SiNx) is further provided on the entire surface between the semiconductor layer 113 and the first substrate 110 It is possible. The buffer layer (not shown) prevents the deterioration of the characteristics of the semiconductor layer 113 due to the release of alkali ions from the inside of the first substrate 110 when the semiconductor layer 113 is crystallized.

A gate insulating layer 116 is formed on the entire surface of the semiconductor layer 113. A gate insulating layer 116 is formed on the semiconductor layer 113 The gate electrode 120 is formed in correspondence with the first region 113a of the gate electrode 120a.

The gate insulating layer 116 is connected to a gate electrode (not shown) formed in the switching region (not shown) and extends in one direction to form a gate wiring (not shown).

Next, an interlayer insulating film 123 made of an inorganic insulating material such as silicon oxide (SiO ₂ ) or silicon nitride (SiNx) is formed on the gate electrode 120 and the gate wiring (not shown). A semiconductor layer contact hole 125 exposing the second region 113b located on both sides of the first region 113a is formed in the interlayer insulating layer 123 and the gate insulating layer 116 below the interlayer insulating layer 123 .

Next, a data line (not shown) is formed on the interlayer insulating layer 123 provided with the semiconductor layer contact hole 125 to define a pixel region P intersecting the gate line (not shown) A power supply wiring (not shown) is formed side by side.

The source and drain electrodes 113 and 114 are in contact with the second region 113b which are spaced apart from each other in the driving region DA and the switching region (not shown) above the interlayer insulating layer 123 and exposed through the semiconductor layer contact hole 125, Drain electrodes 133 and 136 are formed.

On the other hand, the source and drain electrodes 133 and 136, which are separated from the semiconductor layer 113, the gate insulating film 116, the gate electrode 120, and the interlayer insulating film 123 sequentially stacked in the driving region DA, Thereby forming a driving thin film transistor DTr. At this time, a switching thin film transistor (not shown) having the same structure as the driving thin film transistor DTr formed in the driving region DA is formed in the switching region (not shown).

The switching thin film transistor (not shown) is electrically connected to a gate wiring (not shown) and a data wiring (not shown), and further to the driving thin film transistor DTr.

A passivation layer 140 having a drain contact hole 143 exposing a drain electrode 136 of the driving thin film transistor DTr is formed on the driving and switching thin film transistor DTr (not shown). At this time, the protective layer 140 is formed of an organic insulating material such as photo acryl or benzocyclobutene (BCB) so as to obtain a flat surface without being affected by the step of the lower component .

The protective layer 140 is in contact with the drain electrode 136 of the driving thin film transistor DTr through the drain contact hole 143. The pixel electrode P has a transparent conductive layer A first electrode 147 made of a material such as indium-tin-oxide (ITO) is formed.

Next, an insulating layer 150 having a dopant for emitting red, yellow, or green light is provided on the first electrode 147, which functions as an anode electrode, as described above.

At this time, the insulating layer 150 including the dopant for forming the specific color serves as a bank by having an opening op corresponding to the first electrode 147.

A fluorescent layer 151 made of a dopant that fluoresces any one of red, yellow, and green is formed on the first electrode 147 exposed through the opening op of the insulating layer 150 .

The red dopant may be at least one selected from the group consisting of DCM, DCM2, DCJT, DCJTB, PtOEP, Eu (DBM) 3, Rubrene, Btp2Ir, acac, Ir (DBQ) PQIr, or any combination of two or more of them.

The green dopant may be a mixture of at least one of C545T, DMQA, DBQA, TMDBQA, Ir (ppy) 3 and Ir (ppy) 2 (acac).

And the yellow dopant can be rubrene or BTX (Orange).

The fluorescent layer 151 having the dopant for red, green and yellow is not subjected to a separate deposition and patterning process. Since the fluorescent layer 151 having such a structure is caused by the characteristic manufacturing method of the present invention, Will be described in detail.
An organic light emitting material layer 155 emitting light of any one of blue, red, and green is provided on the fluorescent layer 151 in an opening op surrounded by the insulating layer 150.
At this time, the organic light emitting material layer 155 may be an organic light emitting material layer 155 that emits light of any one of blue, red, and green according to a dopant of a specific color included in the fluorescent layer 151 Feature.
For example, when the fluorescent layer 151 is provided with a dopant that fluoresces red or yellow, the organic light emitting material layer 155 may be a layer of the organic light emitting material layer 155 that emits blue light. 155 and the fluorescent layer 151 and is relatively excellent in purity of white color.
On the other hand, the organic luminescent material layer 155 which emits light of the blue is Firpic, (CF3ppy) ₂ Ir (pic), 9,10 di-(2-naphthyl) anthracene (ADN), Perylene, distyrybiphenyl, PVK, OXD-7 , And UGH-3 (Blue).
Next, an upper part of the organic light emitting material layer 155 and the insulating layer 150 forming the bank serves as a cathode electrode on the entire display area AA, and an average work function value serves as an anode electrode. (Al), an aluminum alloy (AlNd), or a silver (Ag) alloy having a work function value of about 4.2 eV to 4.9 eV, which is lower than the work function value of the first electrode 147, A second electrode 158 made of at least one of Ag, Mg, Au, and AlMg is formed.

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At this time, the first and second electrodes 147 and 158, the fluorescent layer 151 formed therebetween, and the organic light emitting material layer 155 form an organic light emitting diode E.

In order to improve the luminous efficiency of the organic electroluminescent diode E, the organic electroluminescent diode E having such a structure may be formed between the first electrode 147 serving as the anode electrode and the fluorescent layer 151 A hole injection layer 201 and a hole transporting layer 202 may be sequentially formed or only one of the two layers 201 and 202 may be formed .

An electron transporting layer 203 and an electron injection layer 204 may be sequentially formed between the organic light emitting material layer 155 and the second electrode 158, Or only one of these two layers 203 and 204 may be provided.

For example, a hole injection layer 201 and a hole transport layer 202 are formed between the first electrode 147 and the fluorescent layer 151, and between the organic light emitting material layer 155 and the second electrode The electron transport layer 203 and the electron injection layer 204 are formed.

At this time, the hole injection layer 201 plays a role of injecting holes from the first electrode 147 serving as an anode electrode into the fluorescent layer 151 and the organic light emitting material layer 155 , Cupper phthalocyanine (CuPc), poly (3,4) -ethylenedioxythiophene (PEDOT), poly (3,4-ethylenedioxythiophene) poly (styrenesulfonate), PANI (polyaniline) and N, N-dinaphthyl- N, N'-diphenyl benzidine).

The hole transport layer 202 plays a role in facilitating the transport of holes and may be formed by using NPD (N, N-dinaphthyl-N, N'-diphenylbenzidine), TPD (N, N'- N, N'-bis- (phenyl) -benzidine), s-TAD and MTDATA (4,4 ', 4 "-tris Two or more materials may be mixed.

The electron transport layer 203 serves to smooth the transport of electrons and may be formed of one or more materials selected from among Alq3 (tris (8-hydroxyquinolino) aluminum), PBD, TAZ, spiro-PBD, BAlq and SAlq Lt; / RTI >

Finally, the electron injection layer 204 serves to smooth the injection of electrons, and one or two or more materials selected from Alq3 (tris (8-hydroxyquinolino) aluminum), PBD, TAZ, spiro-PBD, BAlq, Can be made in a mixed state.

A second substrate 170 for encapsulation corresponding to the first substrate 102 provided with the organic electroluminescent diode E for emitting white according to the embodiment of the present invention having the above- (102).

The first substrate 102 and the second substrate 170 are provided with an adhesive agent (not shown) made of a sealant or a frit along the edges thereof. The first substrate 102 and the second substrate 170 are adhered to each other to maintain a panel state. At this time, a vacuum state is formed between the first substrate 102 and the second substrate 170 which are spaced apart from each other, or an inert gas atmosphere may be obtained by being filled with an inert gas.

In this case, the second substrate 170 for the encapsulation may be made of plastic having a flexible property, or may be made of glass.

In addition, the first substrate 102 and the second substrate 170 are bonded together by the adhesive (not shown), and a face seal is provided on the entire surface of the first substrate 102, The second substrate 170 and the second substrate 170 may be joined together.

Meanwhile, the organic electroluminescent device 101 according to the first embodiment of the present invention has a second substrate 170 for encapsulation spaced apart from the first substrate 102 However, as a modification, the second substrate 170 may be configured to contact the second electrode 158 provided on the uppermost layer of the first substrate 102 in the form of a film including an adhesive layer.

Although not shown in the drawing, according to another embodiment of the present invention, an organic insulating film (not shown) or an inorganic insulating film 162 is further provided on the second electrode 158 to form a capping film (not shown) And the organic insulating film (not shown) or the inorganic insulating film 162 may be used as an encapsulation film. In this case, the second substrate 170 may be omitted.

The white organic electroluminescent device 101 according to the embodiment of the present invention having such a structure is provided with a first electrode 147 for each pixel region P on the first substrate 102, (Not shown) connected to the gate wiring (not shown) and the data wiring (not shown), including a driving thin film transistor DTr and one electrode of the driving thin film transistor DTr, (A cross-sectional view of a part of an organic electroluminescent device according to a first modification of the embodiment of the present invention) and FIG. 4 (a second modification of the embodiment of the present invention) The switching and driving thin film transistor (not shown, DTr) may be omitted when used as a backlight or an illuminating means for emitting white light, as shown in the cross-sectional view of a part of the organic electroluminescent device according to the example .

3, the white organic electroluminescent device 101 according to the first modification of the embodiment of the present invention includes a first substrate 102, a first electrode 102 formed on the first substrate 102, An insulating layer 150 having an opening op for exposing the first electrodes 147 and having a dopant for fluorescently emitting red, yellow or green, A fluorescent layer 151 made of a dopant which fluoresces any one of red, yellow and green in correspondence with the opening op and an organic light emitting material layer 155 emitting light of any one of red, And a second electrode 158 may be formed on the entire surface of the insulating layer 150 and the organic light emitting material layer 155.

In this case, a hole injection layer 201 and a hole transport layer 202 may be sequentially formed between the first electrode 147 and the fluorescent layer 151, or one of the two layers 201 and 202 And an electron transport layer 203 and an electron injection layer 204 may be sequentially formed between the organic light emitting material layer 155 and the second electrode 158. Alternatively, 203, and 204 may be provided.

4, the other components of the white organic light emitting diode 101 according to the second modification of the embodiment of the present invention have the same structure as described with reference to FIG. 4, and the first electrode 147, May be formed on the entire surface of the first substrate 102 similarly to the second electrode 158. At this time, the opening op formed in the insulating layer 150 is formed at a predetermined interval on the first electrode 147.

When the driving voltage is 4.75 V, the efficiency of the organic electroluminescent device 101 according to the embodiment of the present invention is 3.8 cd / A and 3.5Im / W, and the luminance is 1150 cd / m ² , It was experimentally found that CIE_x and CIE_y co-ordinates 0.34 and 0.35 on the CIE chromaticity coordinates, respectively.

Hereinafter, a method of manufacturing the white organic electroluminescent device 101 according to the embodiment of the present invention having the above-described structure will be described. In the case of the first and second modifications of the embodiment of the present invention, the manufacturing method of the organic electroluminescent diode E, which is a characteristic constitution of the present invention, is the same as that of the embodiment, and thus the manufacturing method thereof is omitted.

6A to 6C are cross-sectional views illustrating steps of fabricating a white organic electroluminescent device according to an exemplary embodiment of the present invention. FIGS. 5A to 5G are cross- ) And the organic light emitting layer 155 are enlarged in one pixel region. In this case, since the switching and driving thin film transistors (not shown) are formed by a general method, a manufacturing method of the organic light emitting diode E having the characteristic configuration of the present invention will be described. A region where a switching thin film transistor (not shown) is formed in each pixel region P is defined as a switching region (not shown) and a region where the driving thin film transistor DTr is formed is defined as a driving region DA .

First, as shown in Fig. 5A, on a first substrate 102 made of a glass material or a flexible plastic material having transparent characteristics, gate wirings (not shown) which define the pixel region P intersect with each other, (Not shown), and at the same time, spaced apart from the data line (not shown) and forming a power line (not shown).

Then, the polysilicon semiconductor layer 113, the gate insulating film 116, the gate electrode 120, and the semiconductor layer 113 are exposed to the switching region and the driving region (not shown) of each pixel region P, respectively (Not shown) formed of an interlayer insulating film 123 having a semiconductor layer contact hole 125 and a source and drain electrodes 133 and 136 which are in contact with the semiconductor layer 113 and are spaced apart from each other, ).

At this time, the gate electrode (not shown) and the source electrode (not shown) of the switching thin film transistor (not shown) are connected to the gate wiring (not shown) and the data wiring (not shown) One electrode of the thin film transistor DTr and one electrode of the switching thin film transistor (not shown) and a power supply line (not shown).

Next, as shown in FIG. 5B, a protective layer 140 is formed by applying an organic insulating material such as benzocyclobutene or photoacryl on the switching and driving thin film transistor (not shown, DTr), and patterning the protective layer 140 A drain contact hole 143 exposing the drain electrode 136 of the driving thin film transistor DTr is formed.

Next, as shown in FIG. 5C, indium-tin-oxide (ITO), which is a transparent conductive material having a relatively high work function value, is deposited on the passivation layer 140 having the drain contact hole 143 and is patterned A first electrode 147 is formed in each pixel region P so as to be in contact with the drain electrode 136 of the driving thin film transistor DTr exposed through the drain contact hole 143. The first electrode 147 serves as an anode electrode.

3 and 4) according to the first and second modified examples of the embodiment of the present invention, referring to FIG. 3, on the first substrate 102, the transparent conductive A first electrode 147 having a plate shape is formed on the front surface by depositing indium-tin-oxide (ITO), which is a material, or the first electrode 147 formed on the front surface is patterned Thereby forming a plurality of first electrodes 147 spaced apart from each other.

A hole injection layer 201 and a hole transport layer 202 may be selectively formed on the first electrode 147 in correspondence with the first electrode 147 or a hole injection layer 201 and a hole transport layer 202 may be formed on either one of the two layers 201 and 202 Layer. At this time, since the material forming the hole injection layer 201 and the hole transport layer 202 has already been described, it is omitted.

 5D, a material having an insulating property over the first electrode 147 or the hole injection layer 201 or the hole transport layer 202 may be any one of P4P, PVA, and PMMA, , Yellow and green, and a solvent, for example IPA or alcohol, is coated on the first electrode 147 and cured to form an insulating layer 150 on the entire surface.

 Next, as shown in FIG. 6A, an insulating layer 150 including a dopant that fluoresces any one of red, yellow, and green is formed on the insulation layer 150 using an inkjet apparatus 191, An ink 193 containing any one of choroform, ethylene dichloride and acetone and an organic light emitting material emitting light of any one of red, green and blue is applied to each pixel region P Correspondingly.

6B, the ink 193 jetted onto the insulating layer 150 is reacted with the insulating layer 150 by a solvent composed of any one of choroform, ethylene dichloride, and acetone, When the hole injection layer 201 and the hole transport layer 202 are formed on the first electrode 147 or the first electrode 147 by melting the layer 150, 5e and 6c, a dopant that fluoresces a specific color, which is one of the constituent elements of the insulating layer 150, forms an opening op for exposing the hole transport layer 202, Op at the bottom of the opening op to form a fluorescent layer 151 that fluoresces any one of red, green, and blue. At the same time, in the upper portion of the fluorescent layer 151, The organic light emitting material layer 15 5 are formed.

At this time, since the fluorescent layer 151 is positioned below the organic light emitting material layer 155, the material forming the fluorescent layer 151 is positioned at the bottom due to the specific gravity difference. (193 in FIG. 6B) gradually dissolves the insulating layer 150 from the surface of the insulating layer 150 to the bottom. In this case, a small amount of fluorescent material exists in the organic light emitting material layer 155, but the density thereof is very weak compared to that of the organic light emitting material. Most of the fluorescent material is a fluorescent layer (151).

When the fluorescent layer 151 is formed separately from the organic light emitting material layer 155 under the organic light emitting material layer 155, the efficiency of white light emission is improved as compared with the case where the fluorescent material and the organic light emitting material are mixed, The color purity of white is also improved experimentally.

In the case of the method of manufacturing the white organic electroluminescent device 101 according to the embodiment of the present invention, the insulating layer 150 having an opening op corresponding to each pixel region P is formed by itself, And is formed only in correspondence with the boundary of the region P, thereby forming a bank. The insulating layer 150 having a plurality of openings op which serve as such banks is not patterned by a mask process or the like but is formed by forming the opening 151 op by forming the fluorescent layer 151 and the organic light emitting material layer 155 naturally, ), There is no need to carry out a separate mask process, which is advantageous in simplifying the process.

The fluorescent layer 151 and the organic light emitting material layer 155 are laminated simultaneously by jetting the ink (193 of FIG. 6A) through the ink jet apparatus (191 of FIG. 6A) And the light-emitting material layer 155, respectively.

5F, a metal material having a relatively low work function value such as aluminum (Al), aluminum (Al), or the like is formed on the insulating layer 150 of the pixel region P and the organic light emitting material layer 155, The second electrode 158 is formed on the entire surface of the display region by depositing one or more of aluminum alloy (AlNd), silver (Ag), magnesium (Mg), gold (Au) and aluminum magnesium alloy (AlMg).

An electron transport layer 203 and an electron injection layer 204 may be sequentially formed on the insulating layer 150 and the organic light emitting material layer 155 before the second electrode 158 is formed, Only one of the layers 203 and 204 may be laminated. The electron transport layer 203 and the electron injection layer 204 may be patterned for each pixel region P or may be formed on the entire surface of the display region AA as the second electrode 158. The material forming the electron-transporting layer 203 and the electron-injecting layer 204 has already been described above and is therefore omitted.

The first electrode 147 and the fluorescent layer 151, the organic light emitting material layer 155, and the second electrode 158, which are sequentially stacked, form an organic light emitting diode E.

Next, as shown in FIG. 5G, the second substrate 170 is placed on the first substrate 102 having such a configuration, and adhesion characteristics along the edges of the first and second substrates 102 and 170 The white organic electroluminescent device 101 according to the embodiment of the present invention can be manufactured by bonding the first and second substrates 102 and 170 together in an inert gas atmosphere or a vacuum atmosphere after the seal pattern or frit having the seal pattern or frit is formed. .

At this time, instead of the seal pattern (not shown) or the frit (not shown), a face seal (not shown) having an adhesive property over the second electrode 158 may be formed on the front surface and the second substrate 170 may be attached A second substrate 170 having a shape of a film (not shown) may be attached via an adhesive layer, or an organic material may be coated on the second electrode 158 or an inorganic material may be deposited on the second electrode 158 (Not shown) or an inorganic film (not shown) may be formed to replace the second substrate 170.

102: first substrate
147: first electrode
150: Insulating layer (including fluorescent dopant)
191: Ink jet device
193: Ink (including organic luminescent material)

Claims (18)

delete delete delete delete delete delete delete delete delete delete Forming a first electrode on the first substrate, the first electrode serving as an anode electrode;
Forming an insulating layer on the first electrode, the insulating layer being made of an insulating material including a fluorescent dopant;
Jetting a solvent for dissolving the insulating layer and an ink containing an organic light emitting material at a predetermined interval corresponding to the insulating layer using an ink jet apparatus;
Wherein the ink jetted on the insulating layer reacts with the insulating layer to form an opening exposing the first electrode and a fluorescent dopant contained in the insulating layer is laminated on the first electrode to form a fluorescent layer, Forming an organic light emitting material layer made of the organic light emitting material on the fluorescent layer;
Forming a second electrode that serves as a cathode electrode over the insulating layer and the organic light emitting material layer
/ RTI >
A hole injecting layer and a hole transporting layer are sequentially formed between the first electrode and the fluorescent layer, or one of the two layers is formed,
Wherein the fluorescent dopant fluoresces red or yellow, and the organic light emitting material emits blue light.
12. The method of claim 11,
Wherein the insulating material forming the insulating layer is any one of P4P, PVA, and PMMA.
13. The method of claim 12,
Wherein the solvent for dissolving the insulating layer is any one of chloroform, ethylene dichloride, and acetone.
12. The method of claim 11,
Wherein the first electrode and the second electrode are formed in a plate shape,
Wherein the opening is spaced apart from the first electrode by a predetermined distance.
12. The method of claim 11,
Wherein the first electrodes are spaced apart from each other by a predetermined distance and the second electrodes are formed in a single plate shape.
16. The method of claim 15,
A gate line and a data line are formed on the first substrate to define a plurality of pixel regions intersecting with each other before the first electrode is formed and a driving thin film transistor and a switching thin film transistor are formed in each pixel region,
Wherein the first electrode is formed to be in contact with the drain electrode of the driving thin film transistor for each pixel region.
The method according to any one of claims 11, 14, and 15,
Wherein an electron transport layer and an electron injection layer are sequentially formed between the organic light emitting material layer and the second electrode, or one of the two layers is formed.
The method according to any one of claims 11, 14, and 15,
Forming an organic film or an inorganic film over the second electrode,
Or attaching the second substrate with the second electrode and the face seal interposed therebetween or along the rim of the first substrate with a seal pattern or a frit interposed therebetween.

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