KR100372130B1 - electroluminescent dispay - Google Patents
electroluminescent dispay Download PDFInfo
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- KR100372130B1 KR100372130B1 KR10-2000-0042244A KR20000042244A KR100372130B1 KR 100372130 B1 KR100372130 B1 KR 100372130B1 KR 20000042244 A KR20000042244 A KR 20000042244A KR 100372130 B1 KR100372130 B1 KR 100372130B1
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/1347—Arrangement of liquid crystal layers or cells in which the final condition of one light beam is achieved by the addition of the effects of two or more layers or cells
- G02F1/13471—Arrangement of liquid crystal layers or cells in which the final condition of one light beam is achieved by the addition of the effects of two or more layers or cells in which all the liquid crystal cells or layers remain transparent, e.g. FLC, ECB, DAP, HAN, TN, STN, SBE-LC cells
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/1343—Electrodes
- G02F1/13439—Electrodes characterised by their electrical, optical, physical properties; materials therefor; method of making
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
- H10K30/80—Constructional details
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
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Abstract
본 발명은 박막형 전계발광 표시소자에 관한 것이다.The present invention relates to a thin film type electroluminescent display device.
본 발명은 박막형 전계 발광 표시소자의 구조에 있어서 금속전극으로 사용되는 알루미늄(Aluminium), 니켈(Ni), 몰리브덴늄(Mo)등과 같은 불투명한 금속 전극 대신 상, 하부 전극을 모두 ITO(Indium tin oxide)등의 투명전극을 사용하여 가시광선 영역내에서 투명하게 함으로써 HMD(Head mounted display), 유리창 시계, 각종 게이지 및 광고용 등에 폭 넓게 이용 되어질 수 있는 투명 박막형 전계 발광 표시소자을 제공함에 있는 것이다.According to the present invention, indium tin oxide (ITO) is used instead of opaque metal electrodes such as aluminum, nickel (Ni), molybdenum (Mo), etc., which are used as metal electrodes in the structure of a thin film type EL display device. It is to provide a transparent thin film type electroluminescent display device that can be widely used in HMD (Head mounted display), glass window clock, various gauges and advertisements by making transparent in visible light area using transparent electrode such as).
Description
본 발명은 박막형 전계 발광 소자(electroluminescent dispay :ELD)에 관한 것으로, 더욱 상세하게는 금속전극으로 사용되는 알루미늄(Aluminium), 니켈(Ni), 몰리브덴늄(Mo) 등과 같은 불투명한 금속 전극을 대신하여 상,하부 전극을 모두 ITO(Indium tin oxide)등의 투명전극을 사용하여 가시광선 영역에서 투명한 박막형 전계 발광 표시소자의 제조가 가능한 투명 박막형 전계 발광 표시소자를 제공함에 있는 것이다.BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a thin film electroluminescent device (ELD), and more particularly to an opaque metal electrode such as aluminum, nickel (Ni), molybdenum (Mo), or the like, which is used as a metal electrode. It is to provide a transparent thin film type light emitting display device capable of manufacturing a transparent thin film type light emitting display device in the visible light region by using a transparent electrode such as indium tin oxide (ITO), both upper and lower electrodes.
일반적으로 전계 발광(electroluminescence : EL)이란 비평형 하전 운반자에 의하여 고체로부터 빛이 나는 현상을 말한다. 특히, 이러한 특성을 같는 화합물 반도체를 박막화하여 표시장치로서 사용한 경우, 이를 박막형 EL 표시 소자(thin film electroluminescent display : TFELD)라 한다.In general, electroluminescence (EL) refers to a phenomenon in which a light is emitted from a solid by an unbalanced charge carrier. In particular, when a compound semiconductor having the same characteristics is thinned and used as a display device, this is called a thin film electroluminescent display (TFELD).
TFELD는 적절한 절연막 사이에 형광층(phosphor layer)이 삽입된 샌드위치 구조를 갖는다. 표시소자의 두께가 1-2mm에 정도인 초박형의 평판 디스플레이는 주로 노트북용 모니터에 채용되어왔으나 최근에는 50 inch 이상 초대형 PDP 벽걸이 TV까지 채택되고 있다.TFELD has a sandwich structure in which a phosphor layer is inserted between a suitable insulating film. Ultra-thin flat panel displays with a thickness of about 1-2 mm have been mainly employed in notebook monitors, but recently, even over 50 inches of ultra-large PDP wall-mounted TVs have been adopted.
또한 초소형 평판 디스플레이의 주 응용분야인 휴대폰은 기존의 단순 통신 단말기의 역할로부터 전자메일(e-mail)과 인터넷 정보검색기능을 갖는 움직이는 정보 통신 컴퓨터인 스마트폰등에 이르기 까지 다양한 제품의 형태로 이용되고 있다.In addition, mobile phones, which are the main application fields of ultra-small flat panel displays, are used in various forms, ranging from the role of simple communication terminals to smart phones, which are mobile information communication computers with e-mail and Internet information retrieval functions. have.
LCD, PDP, ELD(박막형 전계발광소자), VFD등의 평판 표시장치 중에서 박막형 전계 발광 표시소자는 소자 구조상 유일하게 완전 고체상태의 소자로서 진동, 충격 및 온도 변화가 심한 특수한 환경하에서도 안정적으로 동작이 가능하며, LCD와 달리 광원(back light)가 필요없는 자 발광형 표시소자 중에서 가장 작은 소비전력을 지니며, 160°이상의 광 시야각을 가지는 우수한 화질의 평판 표시 소자 중의 하나로 현재 미국, 일본, 핀란드 등에서는 군사장비, 의료기기의 표시장치 및 정밀도가 요구되는 계측기기등에 다양하게 이용되고 있다.Among flat panel display devices such as LCD, PDP, ELD (thin-film electroluminescent device), and VFD, thin-film electroluminescent display device is the only solid-state device because of its structure and operates stably under special environment with high vibration, shock and temperature change. Unlike LCD, it has the smallest power consumption among self-emission display devices that do not require a back light, and is one of the best quality flat panel display devices with a wide viewing angle of more than 160 °. It is widely used in military equipment, display devices of medical devices, and measuring devices requiring precision.
또한 전계 발광의 발광 특성이 터널(turnneling)효과에 의존하기 때문에 온도 변화에 둔감하여 온도 변화가 심한 차량내부의 표시장치에 주로 이용되고 있다.In addition, since the light emission characteristic of the electroluminescence depends on the tunneling effect, it is mainly used for the display device inside the vehicle which is insensitive to the temperature change and the temperature change is severe.
종래의 박막형 전계 발광 표시소자는 도 1에 나타낸 바와 같이 기판(1)상에는 ITO(Indium tin odxide)(2)등의 투명전극이 스트라이프(stripe)등 소정의 형태로 패터닝되고 , 그 상부에 SiO2, Al2O3,Ta2O5등의 산화물이나 Si3N4, SiON등의 질화물 등으로 하부 절연막(3)을 형성한 후, 그 상부에 ZnS-Mn등의 발광층(4)을 형성하고 다시 그 상부에 상기의 하부절연층에 사용되었던 산화물이나 질화물 계통의 상부 절연막(5)을 형성하며, 상기의 상부절연층에는 Al, Ni, Ta, W, Mo 등의 금속전극(6)을 투명전극과 교차하는 패턴으로 형성하여 양전극(투명전극과 금속전극)에 선택적으로 교류전압을 인가하여 발광층(4)을 발광시키도록 구성되어 있다.In the conventional thin film type EL display device, as shown in FIG. 1, a transparent electrode such as indium tin odxide (ITO) 2 is patterned into a predetermined shape such as a stripe on the substrate 1, and SiO 2 is disposed on the substrate 1. , The lower insulating film 3 is formed of an oxide such as Al 2 O 3 , Ta 2 O 5 , or a nitride such as Si 3 N 4 , SiON, and the like, and then a light emitting layer 4 such as ZnS-Mn is formed thereon. The upper insulating film 5 of the oxide or nitride system used for the lower insulating layer is formed on the upper part, and the metal electrode 6 such as Al, Ni, Ta, W, Mo, etc. is transparent to the upper insulating layer. The light emitting layer 4 is configured to emit light in the light emitting layer 4 by forming an intersecting pattern with the electrode and selectively applying an alternating voltage to the positive electrode (transparent electrode and the metal electrode).
상기의 금속전극상에는 일반적으로 실리콘 오일(sillicon oil) 등의 밀봉재와 소자를 외부의 충격으로부터 보호하기 위한 보호용 유리가 설치된다.On the metal electrode, a sealing material such as silicone oil and a protective glass for protecting the device from external shock are generally provided.
그러나 이와같은 종래의 박막형 전계 발광 표시소자는 가시광 영역에서 불투명한 금속전극을 사용하기 때문에 투명한 전계 발광 표시소자를 제조할 수 없는 문제점이 있었다.즉, 도 4에 도시된 바와 같이 외부에서 비스듬하게 입사한 빛은 ITO투명전극(2)과, 하부 절연층(3), 발광층(4), 상부절연층(5)을 차례로 통과한뒤, 금속전극(6)에서 반사되므로, 다시 상부절연층(5), 발광층(4), 하부절연층(3), ITO투명전극(2)을 거쳐 외부에 나가게 된다. 따라서 콘트라스트(contrast)가 저하되는 문제점이 있었으며, 디스플레이되는 반대면에서는 디스플레이가 불가능한 문제점이 있었다.However, such a conventional thin film type electroluminescent display has a problem in that it is impossible to manufacture a transparent electroluminescent display because it uses an opaque metal electrode in the visible light region. That is, as shown in FIG. One light passes through the ITO transparent electrode 2, the lower insulating layer 3, the light emitting layer 4, and the upper insulating layer 5, and is then reflected by the metal electrode 6, so that the upper insulating layer 5 ), The light emitting layer 4, the lower insulating layer 3, and the ITO transparent electrode 2 to go out. Therefore, there is a problem that contrast is reduced, and there is a problem that display is impossible on the opposite side of the display.
이에 본 발명은 상기한 바와 같은 종래의 전계발광 표시소자가 갖는 문제점을 해소하기 위해 발명된 것으로, 본 발명의 목적은 불투명한 금속전극 대신 ITO 등의 투명전극을 사용하여 가시광선 영역내에서 투명하게 하여 HMD(Head mounted display), 유리창 시계, 각종 게이지 및 광고용 등에 폭 넓게 이용 되어질 수 있는 투명 박막형 전계 발광 표시소자을 제공함에 있는 것이다.즉, 본 발명에서는 불투명한 금속전극 대신 투명전극을 사용함으로서, 금속전극을 사용할 때와 비교하여 반사율을 크게 줄일 수 있도록하고, 반사율을 줄임으로써 종전보다 월등히 우수한 콘트라스트(contrast)를 얻을 수 있도록 한다.한편, 본 발명에서는 투명전극을 사용함으로서 전원 오프(off)시에도 투명성을 갖게 되므로, 이러한 성질을 이용하여 HMD(Head mounted display), 유리창 시계등과 같은 투명성을 요구하는 디스플레이 분야에 널리 활용할 수 있도록 하며, 디스플레이 되는 반대면에서도 디스플레이 할 수 있도록 한다.Accordingly, the present invention has been invented to solve the problems of the conventional electroluminescent display device as described above, and an object of the present invention is to use a transparent electrode such as ITO instead of an opaque metal electrode to be transparent in the visible light region. The present invention provides a transparent thin film type electroluminescent display device that can be widely used for head mounted display (HMD), glass clock, various gauges, and advertisements. Compared with the use of the electrode, the reflectance can be greatly reduced, and the reflectance can be reduced to obtain a contrast that is much better than before. On the other hand, the present invention uses a transparent electrode even when the power is turned off. Transparency makes it possible to use this property to make head mounted displays (HMDs), glass clocks, etc. And to be widely utilized in display applications that require the same transparency, so that you can display in the opposite side is displayed.
이를 위해 본 발명에서는 투명 기판상에 투명전극과 형광층과 금속전극을 형성하고 발광층의 상부 및 하부 절연층으로 절연한 전계 발광 표시소자에 있어서, 상기 금속 전극이 In-O, Zn-O, Sn-O계를 기본 구성원소로 하고 필요에 따라서 도너원소를 첨가한 투명전극으로 구성되는 것을 특징으로 하고 있다.To this end, in the present invention, in the electroluminescent display device in which a transparent electrode, a fluorescent layer, and a metal electrode are formed on a transparent substrate and insulated with upper and lower insulating layers of the light emitting layer, the metal electrodes are In-O, Zn-O, Sn. It is characterized by consisting of a transparent electrode having -O type as a basic element and a donor element added as necessary.
이하, 본 발명의 바람직한 실시 예를 첨부된 도면을 참고하여 보다 상세하게 설명한다.Hereinafter, exemplary embodiments of the present invention will be described in detail with reference to the accompanying drawings.
도 1은 종래 박막형 전계 발광 표시소자의 적층구조를 나타낸 예시도,1 is an exemplary view showing a laminated structure of a conventional thin film type EL display device;
도 2는 ion beam 보조 전자빔 다층 박막 증착장비를 통하여 제조된 박막형 전계 발광 표시소자의 적층구조를 나타낸 예시도,2 is an exemplary view showing a lamination structure of a thin film type EL display device manufactured through an ion beam auxiliary electron beam multilayer thin film deposition apparatus;
도 3은 본 발명에 의한 박막형 전계 발광 표시소자의 제조 공정도,도 4는 종래 박막형 전계 발광소자의 빛의 진행 상태에 대한 개략설명도.도 5는 본 발명에 의한 박막형 전계 발광 표시소자의 빛의 진행 상태에 대한 개략설명도.Figure 3 is a manufacturing process diagram of the thin film type light emitting display device according to the present invention, Figure 4 is a schematic explanatory view of the light progress state of the conventional thin film type light emitting device. A schematic diagram of the progress of the.
* 도면의 주요부분에 대한 부호의 설명 *Explanation of symbols on the main parts of the drawings
1 : 기판 2 : ITO 투명전극1 substrate 2 ITO transparent electrode
3 :하부절연층 4 : 발광층3: lower insulating layer 4: light emitting layer
5 : 상부절연층 6 : 금속전극5: upper insulating layer 6: metal electrode
31,52: SiO232,51: Ta2O5 31,52: SiO 2 32,51: Ta 2 O 5
8 : 투명전극8: transparent electrode
도 2는 본 발명에 의하여 제조된 투명 박막형 전계 발광 표시소자의 구조를 나타낸 예시도이고, 도 3은 본 발명에 의하여 투명 전계 발광 표시소자룰 제조 공정별로 나타낸 공정도이다.FIG. 2 is an exemplary view showing a structure of a transparent thin film type EL display device manufactured according to the present invention, and FIG. 3 is a process diagram of a transparent EL display device manufacturing process according to the present invention.
본 발명은 도 2에 도시된 바와 같이 투명한 유리기판(1)상에 일정한 간격으로 직선형태의 투명전극(2)을 2000Å의 두께로 형성한다.위에서도 설명한 바와 같이, 투명전극(2)은 ITO(Induim Tin Oxide)등의 투명전극으로서, In-O, Zn-O, Sn-O계를 기본구성원소로 하고 필요에 따라서는 도너원소를 첨가할 수 있으며, 이러한 투명전극(2)의 성분은 종전기술과 크게 상이하지 않다.In the present invention, as shown in FIG. 2, a linear transparent electrode 2 is formed on the transparent glass substrate 1 at a predetermined interval at a thickness of 2000 microns. As described above, the transparent electrode 2 is formed of ITO ( As a transparent electrode such as Induim Tin Oxide, In-O, Zn-O, Sn-O type can be used as a basic element, and a donor element can be added if necessary, and the components of the transparent electrode 2 are known in the art. Is not very different.
전극의 패턴을 형성하는 공정에는 리프트 오프법(lift off), 포토 에칭법(photo etching) 및 메탈 새도우 마스크(metal shadow mask)방식 등을 사용할 수 있으나, 본 발명에서는 metal shadow mask법(도 3의 (a),(b))을 통하여 직선형태의 투명전극 패턴을 형성하였다.Lift off, photo etching, and metal shadow mask methods may be used for forming the pattern of the electrode, but in the present invention, the metal shadow mask method (see FIG. A transparent transparent electrode pattern was formed through (a) and (b).
그리고 상기의 투명 전극상에는 하부절연막(3)이 형성되고, 상기 하부절연막(3)은 ion beam 보조 전자빔 다층박막 증착 장비를 통하여 SiO2(31), Ta2O5(32)를 각각 3000Å의 두께로 증착하였다.The lower insulating layer 3 is formed on the transparent electrode, and the lower insulating layer 3 is formed to have a thickness of 3000 占 for SiO 2 (31) and Ta 2 O 5 (32), respectively, through ion beam assisted electron beam multilayer thin film deposition equipment. Was deposited.
상기 절연층은 SiO2, Al2O3, Ta2O5, Y2O3등의 산화물이나 Si3N4, SiON등의 질화물에 있어 SiO2, Ta2O5의 다층박막으로 형성하였다.The insulating layer was formed of a multilayer thin film of SiO 2 , Ta 2 O 5 in oxides such as SiO 2 , Al 2 O 3 , Ta 2 O 5 , Y 2 O 3 , or nitrides such as Si 3 N 4 and SiON.
절연층의 특성은 박막형 전계발광소자의 신뢰도와 직결됨으로 절연층의 막질의 향상을 위하여 상기의 ion source를 통하여 절연층의 형성시 산소 플라즈마를 형성한 후 증착하였다.Since the characteristics of the insulating layer are directly related to the reliability of the thin film type electroluminescent device, in order to improve the quality of the insulating layer, an oxygen plasma was formed after the formation of the insulating layer through the ion source.
다음으로 발광층(4)의 결정성의 향상을 위하여 기판온도를 250℃ - 300℃ 정도로 유지시킨 상태에서 상기의 하부절연막상에 발광층를 6006Å - 7000Å정도의 두께로 증착한다.Next, in order to improve the crystallinity of the light emitting layer 4, the light emitting layer is deposited on the lower insulating film at a thickness of about 6006 kPa to 7000 kPa while the substrate temperature is maintained at about 250C to 300C.
일반적인 발광층의 재료는 등황색의 ZnS-Mn, 녹색의 ZnS-TbF3, 적색의 ZnS-Sm,Cl 등의 재료를 사용할 수 있으나, 본 발명에서는 ZnS에 발광중심으로 Mn을 0.5wt% - 1.5wt% 정도 첨가된 발광층을 형성하였다.In general, the material of the light emitting layer may be a material such as orange ZnS-Mn, green ZnS-TbF 3 , red ZnS-Sm, Cl, etc. In the present invention, 0.5 wt%-1.5wt% of Mn as the emission center in ZnS The light emitting layer added to the extent was formed.
상기 발광층(4)의 상부에 하부절연층(3)과 동일한 제조방법으로 SiO2(52)/Ta2O5(51)를 각각 2000Å 이상의 두께로 순차적으로 증착하여 상부 절연층(5)을 형성하면 상기의 하부의 ITO 투명전극과 직교하도록 상부 ITO 투명전극이 일정한 간격으로 증착되는 투명 박막형 전계 발광 표시소자가 완성되어질 수 있게 된다.The upper insulating layer 5 is formed by sequentially depositing SiO 2 (52) / Ta 2 O 5 (51) on the light emitting layer 4 in a thickness of 2000 GPa or more in the same manufacturing method as the lower insulating layer 3, respectively. When the upper ITO transparent electrode is deposited at regular intervals so as to be orthogonal to the lower ITO transparent electrode, a transparent thin film type EL display device may be completed.
이처럼 본 발명에 의하여 제조된 투명 박막형 전계 발광 표시소자는 가시광선 투과율이 90%에 이르는 우수한 투과 특성을 나타낼 수 있다.즉, 도 5에 도시된 바와 같이, 외부에서 비스듬하게 입사한 빛은 ITO투명전극(2) 및 하부절연층(3), 발광층(4), 상부절연층(5)을 거친다음, 투명전극(8) 마저 통과하게 되므로 콘트라스트(contrast)가 종래 기술에 비해 월등히 우수해진다.As described above, the transparent thin film type EL display device manufactured according to the present invention may exhibit excellent transmittance characteristics of visible light transmittance of 90%. That is, as shown in FIG. 5, light incident obliquely from the outside is ITO transparent. After passing through the electrode 2, the lower insulating layer 3, the light emitting layer 4, and the upper insulating layer 5, even the transparent electrode 8 passes therethrough, so that the contrast is much superior to the prior art.
이상에서 설명한 바와 같이 본 발명은 투명 박막형 전계 발광 표시소자를 구성하는 모든 박막들(상, 하부 전극, 상, 하부 절연층, 발광층)이 가시광선 영역내에서 투명함으로 HMD(Head mounted display), 유리창 시계, 각종 게이지 및 광고용 등에 폭 넓게 이용 되어질 수 있다.즉, 본 발명에서는 불투명한 금속전극 대신 투명전극을 사용함으로서, 금속전극을 사용할 때와 비교하여 반사율을 크게 줄일 수 있으며, 반사율을 줄임으로써 종전보다 월등히 우수한 콘트라스트(contrast)를 얻을 수 있다.한편, 본 발명에서는 투명전극을 사용함으로서 전원 오프(off)시에도 투명성을 갖게 되므로, 이러한 성질을 이용하여 HMD(Head mounted display), 유리창시계등과 같은 투명성을 요구하는 디스플레이 분야에 널리 활용할 수 있으며, 디스플레이 되는 반대편에서도 디스플레이 할 수 있다.As described above, in the present invention, all of the thin films (upper, lower electrode, upper, lower insulating layer, and light emitting layer) constituting the transparent thin film type electroluminescent display device are transparent in the visible light region, so that a head mounted display (HMD) and a glass window are provided. The present invention can be widely used for watches, various gauges, and advertisements. That is, in the present invention, by using a transparent electrode instead of an opaque metal electrode, the reflectance can be greatly reduced as compared with the case of using a metal electrode, and by reducing the reflectance, It is possible to obtain a much better contrast. On the other hand, in the present invention, since the transparent electrode is used to have transparency even when the power is turned off, this property is used to obtain a head mounted display (HMD), a glass window clock, and the like. It can be widely used in display fields that require the same transparency and can be displayed on the opposite side of the display. Can be.
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