CN101155444A - Field transmitting display device and its manufacturing method - Google Patents

Field transmitting display device and its manufacturing method Download PDF

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Publication number
CN101155444A
CN101155444A CNA2006100628302A CN200610062830A CN101155444A CN 101155444 A CN101155444 A CN 101155444A CN A2006100628302 A CNA2006100628302 A CN A2006100628302A CN 200610062830 A CN200610062830 A CN 200610062830A CN 101155444 A CN101155444 A CN 101155444A
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China
Prior art keywords
substrate
layer
display device
field emission
emission display
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CNA2006100628302A
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Chinese (zh)
Inventor
颜硕廷
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Innolux Shenzhen Co Ltd
Innolux Corp
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Innolux Shenzhen Co Ltd
Innolux Display Corp
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Priority to CNA2006100628302A priority Critical patent/CN101155444A/en
Publication of CN101155444A publication Critical patent/CN101155444A/en
Pending legal-status Critical Current

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Abstract

A field emission display device and its manufacturing method are provided in the present invention. The field emission display device comprises: a first substrate, a second substrate arranged opposite to the first substrate, a metal layer arranged on the surface of the first substrate opposite to the second substrate, an electrode layer arranged on the surface of the second substrate opposite to the first substrate, and a fluorescence powder layer arranged on the electrode layer, keeping some distance between the metal layer and the electrode layer. Wherein, a polysilicon layer is arranged on the metal layer, the polysilicon layer surface has a plurality of tips, the tips are towards the fluorescence powder layer.

Description

Field emission display device and manufacture method thereof
Technical field
The invention relates to the manufacture method of a kind of field emission display device and this field emission display device.
Background technology
Using more widely on the our times, conventional display device is cathode ray tube (Cathode Ray Tube, CRT) display unit, yet along with more and more higher to the requirement of display unit volume, size and power consumption, CRT display more and more can't satisfy people's demand.In recent years, the panel display apparatus development is rapid, and is widely used in fields such as mobile phone, personal digital assistant, notebook computer, PC and TV.Using the most general panel display apparatus at present is liquid crystal indicator, characteristics such as it has low diathermaneity, volume is compact and power consumption is low, yet there are many deficiencies in liquid crystal indicator at manufacture view, and for example, the speed of the unformed silicon of deposition is slow on face glass, yield is lower.In addition, liquid crystal indicator needs the backlight of higher-energy, causes waste yet most of energy that backlight produces all can not be utilized.Moreover the display image of liquid crystal indicator is subjected to the restriction at environment and visual angle, and its response time depend on the response time of liquid crystal material to applied field, therefore, the response speed of liquid crystal indicator is slower, generally between between the 5ms to 75ms.Above-mentioned not enough restriction liquid crystal indicator is as high definition TV, the application of many aspects such as large scale panel display apparatus.
Other panel display apparatus has also obtained good development except that liquid crystal indicator in recent years, and field emission display device promptly is a kind of of this panel display apparatus.Field emission display device applies voltage by the tip on the target and causes electronics to send from the tip, and bump is deposited on fluorescence coating on the positive plate and luminous with display image then.Field emission display device is compared with liquid crystal indicator, it has higher contrast, wider visual angle, higher brightness, shorter response time and wideer operating temperature range, and field emission display device utilizes color phosphor luminous, do not need to adopt complexity and the backlight and the colored filter of power consumption do not need the thin-film transistor array yet, solved the problem of the backlight and the low yield of liquid crystal indicator costliness.
Please refer to Fig. 1, it is a kind of structural representation of field emission display device one sub-pixel unit.This field emission display device 10 comprises one first substrate 11, one second substrate 12, a metal level 110, an insulating barrier 112, a grid 114, a tip 116, a transparency electrode 121 and a phosphor powder layer 123.
This first substrate 11 is oppositely arranged with this second substrate 12, and this metal level 110 is arranged on the inner surface of this first substrate 11.This insulating barrier 112 is arranged on this metal level 110, and this grid 114 is arranged on this insulating barrier 112, and this insulating barrier 112 separates this grid 114 with this metal level 110, and this insulating barrier 112 forms a plurality of openings 118 with this grid 114.A plurality of most advanced and sophisticated 116 are vertically set on metal level 110 surfaces in this opening 118.This transparency electrode 121 is arranged on the inner surface of this second substrate 12, and this phosphor powder layer 123 is coated on this transparency electrode 121.Wherein, this metal level 110 uses as negative electrode, and this transparency electrode 121 is used as anode, and use as electron emission source at this tip 116.
Yet above-mentioned field emission display device 10 has certain defective on processing procedure, especially most advanced and sophisticated 116 making complexity.Please refer to Fig. 2 to Fig. 7, it is the processing procedure cross-sectional view of this emission liquid crystal indicator 10.The manufacture method of this emission liquid crystal indicator 10 may further comprise the steps:
Step 1: please refer to Fig. 2, one first substrate 11 is provided, and on this first substrate 11, form a metal level 110; This first substrate 11 is insulating material.
Step 2: please refer to Fig. 3, form insulating barrier 112; Form an insulating barrier 112 on this metal level 110, this insulating barrier 112 is silica.
Step 3: please refer to Fig. 4, form grid 114 and opening 118; Form a grid 114 on this insulating barrier 112, as the usefulness of grid lead, this grid 114 is niobium layers.And this insulating barrier 112 of etching and this grid 114, on this metal level 110, to form opening 118.
Step 4: please refer to Fig. 5, form an aluminium lamination 113; Utilize on this grid 114 that side direction Shen is long-pending to form an aluminium lamination 113, and 113 of this aluminium laminations are deposited on this grid 114, do not insert in this opening 118.The purpose that forms this aluminium lamination 113 is to be used as sacrifice layer, uses when the strip step of successive process.
Step 5: please refer to Fig. 6, taper off to a point 116; On the metal level 110 at this aluminium lamination 113 and opening 118 places, deposit a chromium layer 115, a niobium layer 117 and a molybdenum layer 119 in regular turn, so in this opening 118, form one coniform most advanced and sophisticated 116.
Step 6: please refer to Fig. 7, divest aluminium lamination 113, and the chromium layer 115 on this aluminium lamination 113, niobium layer 117 and molybdenum layer 119.
Above-mentioned steps is promptly finished the making of minus plate, adds the making of transparency electrode 121 and phosphor powder layer 123 on second substrate 12, at last this first, second substrate 11,12 is cooperated assembling, can finish the making of whole field emission display device 10.
By above-mentioned manufacture method as can be known, the use of metal level is very frequent, has just used twice such as the niobium layer, and in manufacture process, needs to use 5-6 road light shield processing procedure, and processing procedure is many and very complicated.In addition,, only have the small part metal to be used at most advanced and sophisticated 116 o'clock, and major part is removed, and causes waste easily in most advanced and sophisticated 116 formation backs making.Because the cost costliness of these metal materials also causes the cost of this field emission display device 10 too high.
Summary of the invention
In order to overcome field emission display device processing procedure complexity and the high problem of cost in the prior art, be necessary to provide the field emission display device that a kind of processing procedure is simple and cost is low.
Also be necessary to provide a kind of manufacture method of above-mentioned field emission display device.
A kind of field emission display device, it comprise one first substrate, one and second substrate, that is oppositely arranged of this first substrate metal level, that is arranged on this first substrate and the second substrate facing surfaces electrode layer and that is arranged on this second substrate and the first substrate facing surfaces be arranged on phosphor powder layer on this electrode layer, keep a determining deviation between this metal level and this electrode layer.Wherein, a polysilicon layer is arranged on this metal level, these a plurality of tips of tool, polysilicon layer surface, and this tip is towards this phosphor powder layer.
A kind of manufacture method of field emission display device, it may further comprise the steps: one first substrate is provided; Form a metal level on this first substrate; Form an amorphous silicon layer on this metal level; This amorphous silicon layer is handled to form a plurality of tips on polysilicon layer and this polysilicon layer surface; One second substrate is provided; Form an electrode layer on this second substrate; Form a phosphor powder layer on this electrode layer, these a plurality of tips are towards this phosphor powder layer; In conjunction with this first, second substrate.
Wherein, this polysilicon layer and this tip are to form by the radium-shine recrystallized amorphous silicon that makes of quasi-molecule.
Compared to prior art, this field emission display device only needs to form an amorphous silicon layer on metal level, directly utilize the radium-shine technology of quasi-molecule to make this amorphous silicon layer crystallization form polysilicon layer, so form a plurality of tips naturally on the surface of this polysilicon layer, processing procedure is simple, and most advanced and sophisticated nonmetal making is so cost is low.
Description of drawings
Fig. 1 is a kind of structural representation of prior art field emission display device one sub-pixel unit.
Fig. 2 to Fig. 7 is the processing procedure cross-sectional view of the field emission liquid crystal indicator of Fig. 1.
Fig. 8 is the structural representation of field emission display device better embodiment of the present invention.
Fig. 9 to Figure 11 is the processing procedure cross-sectional view of the field emission liquid crystal indicator of Fig. 8
Embodiment
Please refer to Fig. 8, it is the structural representation of field emission display device better embodiment of the present invention.This field emission display device 20 comprises one first substrate 21, one second substrate 22, a metal level 210, an electrode layer 221, a phosphor powder layer 223, a polysilicon layer (Poly Silicon) 212 and is formed on a plurality of most advanced and sophisticated 218 of these polysilicon layer 212 surfaces.
This first substrate 21 is transparent or opaque substrates, and this second substrate 22 is transparency carriers, and this first, second substrate 21,22 is oppositely arranged.This metal level 210 is arranged on the inner surface of this first substrate 21, uses as negative electrode, and this metal level 210 is an aluminium.This polysilicon layer 212 is arranged on this metal level 210, this polysilicon layer 212 is via quasi-molecule radium-shine (Excimer Laser) technology recrystallized amorphous silicon to be formed with a plurality of most advanced and sophisticated 218 of its surface, this a plurality of most advanced and sophisticated 218 uses as electron emission source, towards this phosphor powder layer 223.This electrode layer 221 is arranged on the inner surface of this second substrate 22, uses as anode, and this electrode layer 221 is transparency electrodes, such as tin indium oxide (Indium TinOxide, ITO) or indium zinc oxide (Indium Zinc Oxide, IZO).This phosphor powder layer 223 is arranged on this electrode layer 221, and the fluorescent material of this phosphor powder layer 223 can be selected following different materials: red fluorescence powder, Y 2O 3: Eu, Y 2O 2S:Eu; Green emitting phosphor, SrGa 2S 4: Eu, Y 2SiO 5: Tb, ZnS:(Cu, Al); Blue colour fluorescent powder, Y 2SiO 5: Ce, ZnS:Ag etc.
The zone is a vacuum state between this first, second substrate 21,22, and the distance on the surface of the surface of this cathodic metal layer 210 and this anode electrode layer 221 is between 0.2～1.0mm.Apply a voltage between this cathodic metal layer 210 and this anode electrode layer 221, this voltage makes electronics from most advanced and sophisticated 218 emissions, excites the light-emitting phosphor of this phosphor powder layer 223, shows to realize image.
Please refer to Fig. 9 to Figure 11, it is the processing procedure cross-sectional view of this emission liquid crystal indicator 20.The manufacture method of this emission liquid crystal indicator 20 mainly is that the manufacture method of minus plate may further comprise the steps:
Step 1: one first substrate 21 is provided; This first substrate 21 is transparent or opaque substrates.
Step 2: please refer to Fig. 9, form a metal level 210; Utilize physical vaporous deposition to deposit a metal level 210 on this first substrate 21, deposit thickness is 50～500nm, and this metal level 210 is an aluminium.
Step 3: please refer to Figure 10, form an amorphous silicon layer (AmorphousSilicon) 219; Utilize chemical vapour deposition technique to deposit an amorphous silicon layer 219 on this metal level 210, this amorphous silicon layer 219 is heavy doping (Heavily Doped) amorphous silicon layers, and the gas source that is adopted is SiH 4+ H 2+ PH 3, depositing temperature is 100～500 ℃, deposit thickness is 30～200nm.
Step 4: please refer to Figure 11, form polysilicon layer 212 and most advanced and sophisticated 218.Form polysilicon layer 212 via radium-shine amorphous silicon layer 219 crystallizations that make of quasi-molecule, polysilicon layer 212 surfaces behind the crystallization are formed with a plurality of most advanced and sophisticated 218.
Above-mentioned steps is promptly finished the making of minus plate.Carry out the making of transparency electrode 221 and phosphor powder layer 223 on second substrate 22 then, its step is as follows:
Step 1: one second substrate 22 is provided; This second substrate 22 is transparency carriers.
Step 2: form an electrode layer 221; Utilize physical vaporous deposition to deposit an electrode layer 221 on this second substrate 22, deposit thickness is 20～100nm.This electrode layer 221 is transparency electrodes.
Step 3: form a phosphor powder layer 223.Coating one phosphor powder layer 223 on this electrode layer 221.
At last this first, second substrate 21,22 is cooperated assembling, make that the zone is a vacuum state between this first, second substrate 21,22, the distance on the surface of the surface of this cathodic metal layer 210 and this anode electrode layer 221 can be finished the making of whole field emission display device 20 between 0.2～1.0mm.
This field emission display device 20 only needs to form an amorphous silicon layer 219 on metal level 210, directly utilize the radium-shine technology of quasi-molecule to make these amorphous silicon layer 219 crystallizations form polysilicon layer 212, so form a plurality of most advanced and sophisticated 218 naturally on the surface of this polysilicon layer 212, processing procedure is simple, and most advanced and sophisticated 218 nonmetal making are so cost is low.

Claims (10)

1. field emission display device, it comprise one first substrate, one and second substrate, that is oppositely arranged of this first substrate metal level, that is arranged on this first substrate and the second substrate facing surfaces electrode layer and that is arranged on this second substrate and the first substrate facing surfaces be arranged on phosphor powder layer on this electrode layer, keep a determining deviation between this metal level and this electrode layer, it is characterized in that: a polysilicon layer is arranged on this metal level, this polysilicon layer surface has a plurality of tips, and this tip is towards this phosphor powder layer.
2. field emission display device as claimed in claim 1 is characterized in that: this polysilicon layer and this tip are to form by the radium-shine recrystallized amorphous silicon that makes of quasi-molecule.
3. field emission display device as claimed in claim 1 is characterized in that: the distance of this layer on surface of metal and this electrode layer surface is between 0.2～1.0mm.
4. the manufacture method of a field emission display device, it is characterized in that: it may further comprise the steps:
One first substrate is provided;
Form a metal level on this first substrate;
Form an amorphous silicon layer on this metal level;
This amorphous silicon layer is handled to form a plurality of tips on polysilicon layer and this polysilicon layer surface;
One second substrate is provided;
Form an electrode layer on this second substrate;
Form a phosphor powder layer on this electrode layer, these a plurality of tips are towards this phosphor powder layer;
In conjunction with this first, second substrate.
5. the manufacture method of field emission display device as claimed in claim 4, it is characterized in that: this polysilicon layer and this tip are to form by the radium-shine recrystallized amorphous silicon that makes of quasi-molecule.
6. the manufacture method of field emission display device as claimed in claim 4 is characterized in that: this metal level is that deposit thickness is 50～500nm with the long-pending method deposition in physical vapor Shen.
7. the manufacture method of field emission display device as claimed in claim 4 is characterized in that: this amorphous silicon layer is that the gas source that is adopted is SiH with the long-pending method deposition in chemical gaseous phase Shen 4+ H 2+ PH 3, depositing temperature is 100～500 ℃, deposit thickness is 30～200nm.
8. the manufacture method of field emission display device as claimed in claim 4 is characterized in that: this electrode layer is that deposit thickness is 20～100nm with the long-pending method deposition in physical vapor Shen.
9. the manufacture method of field emission display device as claimed in claim 4, it is characterized in that: the distance of this layer on surface of metal and this electrode layer surface is between 0.2～1.0mm.
10. the manufacture method of field emission display device as claimed in claim 4, it is characterized in that: the fluorescent material of this phosphor powder layer can be selected one of following different materials: red fluorescence powder, Y 2O 3: Eu, Y 2O 2S:Eu; Green emitting phosphor, SrGa 2S 4: Eu, Y 2SiO 5: Tb, ZnS:(Cu, Al); Blue colour fluorescent powder, Y 2SiO 5: Ce, ZnS:Ag.
CNA2006100628302A 2006-09-27 2006-09-27 Field transmitting display device and its manufacturing method Pending CN101155444A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CNA2006100628302A CN101155444A (en) 2006-09-27 2006-09-27 Field transmitting display device and its manufacturing method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CNA2006100628302A CN101155444A (en) 2006-09-27 2006-09-27 Field transmitting display device and its manufacturing method

Publications (1)

Publication Number Publication Date
CN101155444A true CN101155444A (en) 2008-04-02

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Family Applications (1)

Application Number Title Priority Date Filing Date
CNA2006100628302A Pending CN101155444A (en) 2006-09-27 2006-09-27 Field transmitting display device and its manufacturing method

Country Status (1)

Country Link
CN (1) CN101155444A (en)

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