KR102100385B9 - 실리사이드층을 포함하는 수직 나노선을 이용한 열전소자 및 이의 제조 방법 - Google Patents
실리사이드층을 포함하는 수직 나노선을 이용한 열전소자 및 이의 제조 방법Info
- Publication number
- KR102100385B9 KR102100385B9 KR20170153007A KR20170153007A KR102100385B9 KR 102100385 B9 KR102100385 B9 KR 102100385B9 KR 20170153007 A KR20170153007 A KR 20170153007A KR 20170153007 A KR20170153007 A KR 20170153007A KR 102100385 B9 KR102100385 B9 KR 102100385B9
- Authority
- KR
- South Korea
- Prior art keywords
- manufacturing
- same
- device including
- silicide layer
- thermoelectric device
- Prior art date
Links
- 238000004519 manufacturing process Methods 0.000 title 1
- 238000000034 method Methods 0.000 title 1
- 239000002070 nanowire Substances 0.000 title 1
- 229910021332 silicide Inorganic materials 0.000 title 1
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N10/00—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects
- H10N10/10—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects operating with only the Peltier or Seebeck effects
- H10N10/13—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects operating with only the Peltier or Seebeck effects characterised by the heat-exchanging means at the junction
-
- H01L29/0676—
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N10/00—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects
- H10N10/10—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects operating with only the Peltier or Seebeck effects
- H10N10/17—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects operating with only the Peltier or Seebeck effects characterised by the structure or configuration of the cell or thermocouple forming the device
-
- H01L29/0673—
-
- H01L29/456—
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N10/00—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects
- H10N10/01—Manufacture or treatment
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N10/00—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects
- H10N10/80—Constructional details
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N10/00—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects
- H10N10/80—Constructional details
- H10N10/85—Thermoelectric active materials
- H10N10/851—Thermoelectric active materials comprising inorganic compositions
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N10/00—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects
- H10N10/80—Constructional details
- H10N10/85—Thermoelectric active materials
- H10N10/851—Thermoelectric active materials comprising inorganic compositions
- H10N10/8556—Thermoelectric active materials comprising inorganic compositions comprising compounds containing germanium or silicon
Landscapes
- Chemical & Material Sciences (AREA)
- Inorganic Chemistry (AREA)
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Thin Film Transistor (AREA)
- Electrodes Of Semiconductors (AREA)
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1020170153007A KR102100385B1 (ko) | 2017-11-16 | 2017-11-16 | 실리사이드층을 포함하는 수직 나노선을 이용한 열전소자 및 이의 제조 방법 |
| US16/186,844 US20190148615A1 (en) | 2017-11-16 | 2018-11-12 | Vertical nanowire thermoelectric device including silicide layer and method of manufacturing the same |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1020170153007A KR102100385B1 (ko) | 2017-11-16 | 2017-11-16 | 실리사이드층을 포함하는 수직 나노선을 이용한 열전소자 및 이의 제조 방법 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| KR20190056024A KR20190056024A (ko) | 2019-05-24 |
| KR102100385B9 true KR102100385B9 (ko) | 2020-04-13 |
| KR102100385B1 KR102100385B1 (ko) | 2020-04-13 |
Family
ID=66433737
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR1020170153007A KR102100385B1 (ko) | 2017-11-16 | 2017-11-16 | 실리사이드층을 포함하는 수직 나노선을 이용한 열전소자 및 이의 제조 방법 |
Country Status (2)
| Country | Link |
|---|---|
| US (1) | US20190148615A1 (ko) |
| KR (1) | KR102100385B1 (ko) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111146326B (zh) * | 2019-12-03 | 2024-04-05 | 中国科学院微电子研究所 | 一种热电器件及其制备方法 |
| KR102455336B1 (ko) | 2021-01-19 | 2022-10-18 | 동국대학교 산학협력단 | 나노선 기반의 열전 발전소자 및 그 제조방법 |
Family Cites Families (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR101864211B1 (ko) | 2010-12-30 | 2018-06-05 | 한국전자통신연구원 | 실리콘 나노선 기반의 열전소자 및 그 제조 방법 |
| KR101316375B1 (ko) * | 2011-08-19 | 2013-10-08 | 포항공과대학교 산학협력단 | 태양전지 및 이의 제조방법 |
| EP2885823B1 (en) * | 2012-08-17 | 2018-05-02 | Matrix Industries, Inc. | Methods for forming thermoelectric devices |
| US9640645B2 (en) * | 2013-09-05 | 2017-05-02 | Taiwan Semiconductor Manufacturing Company Limited | Semiconductor device with silicide |
| EP3123532B1 (en) * | 2014-03-25 | 2018-11-21 | Matrix Industries, Inc. | Thermoelectric devices and systems |
| KR101995614B1 (ko) * | 2015-09-08 | 2019-07-02 | 포항공과대학교 산학협력단 | 비대칭 수직 나노선 어레이를 이용한 열전소자 및 이의 제조방법 |
-
2017
- 2017-11-16 KR KR1020170153007A patent/KR102100385B1/ko active IP Right Grant
-
2018
- 2018-11-12 US US16/186,844 patent/US20190148615A1/en not_active Abandoned
Also Published As
| Publication number | Publication date |
|---|---|
| KR20190056024A (ko) | 2019-05-24 |
| US20190148615A1 (en) | 2019-05-16 |
| KR102100385B1 (ko) | 2020-04-13 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| EP3729332A4 (en) | BIOMETRIC IMAGING DEVICE AND METHOD OF MANUFACTURING THE BIOMETRIC IMAGING DEVICE | |
| EP3252525C0 (en) | DISPLAY DEVICE AND METHOD FOR MANUFACTURING SAME | |
| TWI562209B (en) | Semiconductor device and method for manufacturing the same | |
| EP3407376A4 (en) | SEMICONDUCTOR COMPONENT AND METHOD FOR THE PRODUCTION THEREOF | |
| SG10202112428YA (en) | Device and method for microfluidics-based 3d bioprinting | |
| SG10201912585TA (en) | Semiconductor device and method for manufacturing the same | |
| EP3422428A4 (en) | PROCESS FOR PRODUCING A thermoelectric conversion material ON MAGNESIUM BASE, PROCESS FOR PRODUCING A thermoelectric conversion element magnesium-based thermoelectric conversion material magnesium-based thermoelectric conversion element ON MAGNESIUM BASE AND CONVERSION DEVICE THERMOELECTRICAL | |
| HK1205357A1 (en) | Semiconductor device and method for manufacturing the same | |
| SG10201608814YA (en) | Semiconductor device and method for manufacturing the semiconductor device | |
| PT3339023T (pt) | Laminado, método para o fabrico do laminado, dispositivo semicondutor e método para o fabrico do dispositivo semicondutor | |
| SG10201909446PA (en) | Semiconductor memory device and method for forming the same | |
| SG10201905840VA (en) | Semiconductor device and manufacturing method thereof | |
| TWI562316B (en) | Semiconductor device and method for fabricating the same | |
| GB2573215B (en) | Semiconductor manufacturing method and semiconductor manufacturing device | |
| HK1221070A1 (zh) | 半導體器件和用於製造其的方法 | |
| EP3453276A4 (en) | FASTENING ELEMENT, MANUFACTURING DEVICE FOR FASTENING ELEMENT AND MANUFACTURING METHOD FOR FASTENING ELEMENT | |
| HK1251718A1 (zh) | 半導體裝置及其製造方法 | |
| GB2567619B (en) | Pneumatic device and method for manufacturing the same | |
| EP3506369A4 (en) | SEMICONDUCTOR COMPONENT AND METHOD FOR THE PRODUCTION THEREOF | |
| EP3451062A4 (en) | SEMICONDUCTOR COMPONENT AND METHOD FOR THE PRODUCTION THEREOF | |
| EP3432371A4 (en) | MAGNEI-BASED THERMOELECTRIC CONVERSION MATERIAL, MAGNESIUM-BASED THERMOELECTRIC CONVERSION ELEMENT, THERMOELECTRIC CONVERSION DEVICE, AND METHOD FOR MANUFACTURING MAGNESIUM-BASED THERMOELECTRIC CONVERSION MATERIAL | |
| GB2566895B (en) | Power device and method for manufacturing the power device | |
| EP3595082B8 (en) | Integrated device and manufacturing method thereof | |
| TWI562302B (en) | Semiconductor device and method for fabricating the same | |
| KR102100385B9 (ko) | 실리사이드층을 포함하는 수직 나노선을 이용한 열전소자 및 이의 제조 방법 |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| A201 | Request for examination | ||
| E902 | Notification of reason for refusal | ||
| E902 | Notification of reason for refusal | ||
| E701 | Decision to grant or registration of patent right | ||
| GRNT | Written decision to grant | ||
| G170 | Re-publication after modification of scope of protection [patent] |