GB2566895B - Power device and method for manufacturing the power device - Google Patents
Power device and method for manufacturing the power device Download PDFInfo
- Publication number
- GB2566895B GB2566895B GB1901361.4A GB201901361A GB2566895B GB 2566895 B GB2566895 B GB 2566895B GB 201901361 A GB201901361 A GB 201901361A GB 2566895 B GB2566895 B GB 2566895B
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- power device
- manufacturing
- power
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- 238000004519 manufacturing process Methods 0.000 title 1
- 238000000034 method Methods 0.000 title 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
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- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/0203—Particular design considerations for integrated circuits
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
- H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
- H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
- H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
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- H01L29/0692—Surface layout
- H01L29/0696—Surface layout of cellular field-effect devices, e.g. multicellular DMOS transistors or IGBTs
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- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
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- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
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- H01L29/66712—Vertical DMOS transistors, i.e. VDMOS transistors
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- H01L29/0642—Isolation within the component, i.e. internal isolation
- H01L29/0649—Dielectric regions, e.g. SiO2 regions, air gaps
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- H01L29/08—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/0843—Source or drain regions of field-effect devices
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- H01L29/0852—Source or drain regions of field-effect devices of field-effect transistors with insulated gate of DMOS transistors
- H01L29/0856—Source regions
- H01L29/0865—Disposition
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- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Semiconductor Integrated Circuits (AREA)
- Thin Film Transistor (AREA)
- Electrodes Of Semiconductors (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201610556683.8A CN106229313B (en) | 2016-07-14 | 2016-07-14 | Power device and preparation method thereof |
PCT/CN2017/091823 WO2018010581A1 (en) | 2016-07-14 | 2017-07-05 | Power device and preparation method therefor |
Publications (3)
Publication Number | Publication Date |
---|---|
GB201901361D0 GB201901361D0 (en) | 2019-03-20 |
GB2566895A GB2566895A (en) | 2019-03-27 |
GB2566895B true GB2566895B (en) | 2021-02-17 |
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GB1901361.4A Active GB2566895B (en) | 2016-07-14 | 2017-07-05 | Power device and method for manufacturing the power device |
Country Status (3)
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CN (1) | CN106229313B (en) |
GB (1) | GB2566895B (en) |
WO (1) | WO2018010581A1 (en) |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN106229313B (en) * | 2016-07-14 | 2019-12-06 | 王培林 | Power device and preparation method thereof |
JP6696450B2 (en) * | 2017-01-27 | 2020-05-20 | 株式会社デンソー | Silicon carbide semiconductor device |
CN111564497B (en) * | 2020-04-30 | 2023-04-18 | 西安理工大学 | SiC MOSFET device with non-uniform body diode |
CN112968052B (en) * | 2020-12-23 | 2024-06-11 | 王培林 | Planar gate type power device with current sensor and preparation method thereof |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN103489862A (en) * | 2012-06-12 | 2014-01-01 | 飞思卡尔半导体公司 | Power MOSFET current sensing structure and method |
US20160079377A1 (en) * | 2014-09-15 | 2016-03-17 | Infineon Technologies Austria Ag | Semiconductor Device with Current Sensor |
CN106229313A (en) * | 2016-07-14 | 2016-12-14 | 王培林 | Power device and preparation method thereof |
CN106783985A (en) * | 2016-11-21 | 2017-05-31 | 王培林 | Power device and preparation method thereof |
Family Cites Families (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6822288B2 (en) * | 2001-11-20 | 2004-11-23 | General Semiconductor, Inc. | Trench MOSFET device with polycrystalline silicon source contact structure |
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2016
- 2016-07-14 CN CN201610556683.8A patent/CN106229313B/en active Active
-
2017
- 2017-07-05 WO PCT/CN2017/091823 patent/WO2018010581A1/en active Application Filing
- 2017-07-05 GB GB1901361.4A patent/GB2566895B/en active Active
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN103489862A (en) * | 2012-06-12 | 2014-01-01 | 飞思卡尔半导体公司 | Power MOSFET current sensing structure and method |
US20160079377A1 (en) * | 2014-09-15 | 2016-03-17 | Infineon Technologies Austria Ag | Semiconductor Device with Current Sensor |
CN106229313A (en) * | 2016-07-14 | 2016-12-14 | 王培林 | Power device and preparation method thereof |
CN106783985A (en) * | 2016-11-21 | 2017-05-31 | 王培林 | Power device and preparation method thereof |
Also Published As
Publication number | Publication date |
---|---|
WO2018010581A1 (en) | 2018-01-18 |
CN106229313B (en) | 2019-12-06 |
GB201901361D0 (en) | 2019-03-20 |
GB2566895A (en) | 2019-03-27 |
CN106229313A (en) | 2016-12-14 |
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