KR102088019B1 - Heat dissipating device and package for heat dissipating using the same - Google Patents

Abstract

Provide a heat dissipation support substrate and heat dissipation package. The heat dissipation support substrate includes a base part for supporting a heat generating source, a heat dissipation part provided in the base part, the porous micro structure part conducting heat of the heat generating source, and a phase change material filling at least a portion of the pores of the porous micro structure part; It includes a connecting portion provided in the base portion for electrical wiring with the heat generating source. Therefore, the heat dissipation element composed of the porous microstructure and the phase change material in the form of an open cell provides a heat dissipation property to prevent overheating of the heat generating source with a high endothermic capacity due to the phase change phenomenon.

Description

Heat dissipating device and package for heat dissipating using the same}

The present invention relates to a heat dissipation support substrate and a heat dissipation package using the same, and more particularly, to a heat dissipation support substrate which reduces the temperature of the heat generation chip below a predetermined upper temperature limit that ensures the normal operation of the chip and does not impair the reliability of the device. It relates to a heat dissipation package using the same.

A typical representative package structure for heat dissipation of integrated circuit chips is a chip carrier or chip mounting in which chip dies such as integrated circuits, which are main heating elements, are manufactured in the form of a printed circuit board (PCB). Joined on a board, a metal lid (metal lid) assembly structure.

The space between the top surface of the metal lid and the chip die may be filled with a composite filler to improve thermal conduction.

On the outer surface of the metal lid of the assembled chip package, a heat sink heat dissipation mechanism having a fin shape for improving convective cooling performance by air includes a thermal interface material; TIM) can be configured by bonding assembly.

However, as the integration density of silicon-based complementary metal oxide semiconductor integrate circuits (CMOS ICs) increases, the driving frequency increases, and the heat generation density, which is the amount of heat generated per chip area, increases. Increase sharply

 In particular, the increasing tendency of leakage current due to the scale down of the gate length increases the amount of heat generated in the chip, and the substrate and junction due to the heat generation. Increasing temperature causes a vicious cycle that increases leakage current to a higher level, which can, in extreme cases, cause an integrated circuit to malfunction or cause a permanent breakdown.

In addition, in power electronic devices such as power semiconductors operating in high voltage and high level current environments, the importance of heat dissipation means for treating high levels of heat generation is becoming more important. The heat dissipation path depending on the conduction according to the prior art in the heat radiation of the chip having a high heat density is encountered at the limit point.

On the other hand, in the case of components applied to portable electronic devices and consumer electronics such as high-performance, highly integrated CMOS integrated circuits and integrated circuits for high-speed wireless communications, the miniaturization including the thickness of the chip package forms a major industrial technical flow, and therefore, heat dissipation according to the prior art. Increasingly, bulky and thick heat dissipation means such as fin sinks and cooling fans are not applicable.

Therefore, it is necessary to overcome the limitations of the heat dissipation support substrate and to develop a new heat dissipation support substrate that can improve heat dissipation performance.

An object of the present invention is to provide a heat dissipation support substrate that provides a heat dissipation means by heat generation of a chip in a chip package.

Another problem to be solved by the present invention is to provide a heat dissipation support substrate that ensures the temperature of the heat generating chip below a predetermined upper temperature limit that ensures the normal operation of the chip and does not impair the reliability of the device.

Another object of the present invention is to provide a heat dissipation support substrate capable of providing the wiring means for the electrical signal path and the heat conduction and heat dissipation means in an integrated form on the same substrate.

Another object of the present invention is to provide a heat dissipation support substrate that provides a combination of mechanical stiffness required to support a chip and heat dissipation performance that limits the operating temperature of the chip within a predetermined upper limit temperature.

Another object of the present invention is to provide a heat dissipation package configured by assembling and encapsulating a heat source using the heat dissipation support substrate described above.

One aspect of the present invention to achieve the above object provides a heat dissipation support substrate. The heat dissipation support substrate includes a base part for supporting a heat generating source, a heat dissipation part including a phase change material provided in the base part, the porous microstructure part conducting heat of the heat generating source, and a phase change material filling at least a portion of the pores of the porous microstructure part. And a connection part provided in the base part for electrical wiring with the heat generating source.

The heat dissipation part may further include a heat conductive layer positioned below the porous microstructure part and a heat conductive cover positioned above the porous microstructure part.

The phase change material is characterized in that a phase change occurs between the first and second heat generating temperatures of the heat generating source.

The porous microstructure may include at least one selected from the group consisting of copper, nickel, titanium, aluminum, and alloys thereof.

The phase change material may include an organic phase change material or an inorganic phase change material.

The inorganic phase change material is MgCl ₂ · 6H ₂ O, Al ₂ (SO ₄ ) ₃ · 10H ₂ O, NH ₄ Al (SO ₄ ) ₂ · 12H ₂ O, KAl (SO ₄ ) ₂ · 12H ₂ O, Mg (SO ₃ ) ₂ · 6H ₂ O, SrBr ₂ · 8H ₂ O, Sr (OH) ₂ · 8H ₂ O, Ba (OH) ₂ · 8H ₂ O, Al (NO ₃ ) ₂ · 9H ₂ O, Fe ( NO ₃ ) ₂ · 6H ₂ O, NaCH ₂ S ₂ O ₂ · 5H ₂ O, Ni (NO ₃ ) ₂ · 6H ₂ O, Na ₂ S ₂ O ₂ · 5H ₂ O, ZnSO ₄ · 7H ₂ O, CaBr _{2 · 6H 2 O, Zn (} NO 3) 2 · 6H 2 O, Na 2 HPO 4 · 12H 2 O, Na 2 CO 3 · 10H 2 O, and CaCl ₂ · at least one selected from the group consisting of 6H ₂ O It may include a substance of.

The organic phase change material may include at least one material selected from the group consisting of tetradecane, octadecane, nonadecane and acetic acid.

The thermally conductive layer or the thermally conductive cover may include at least one selected from the group consisting of copper, aluminum, zinc, nickel, and alloys thereof.

The heat dissipation unit is characterized in that any one selected from the group consisting of graphene, graphite and carbon nanotubes is further located on the surface of the porous microstructure.

Another aspect of the present invention to achieve the above object provides a heat dissipation package. The heat dissipation package includes a heat dissipation part including a heat conduction layer, a porous microstructure part positioned on the heat conductive layer, a phase change material filling at least a portion of the pores of the porous microstructure part, and a thermal conductive cover positioned on the porous microstructure part; The heat dissipation support substrate may include a heat dissipation support substrate including a connection unit for electrical wiring, a heat dissipation source disposed on the heat dissipation support substrate, and a heat dissipation cover covering the heat dissipation source.

The heat generating source may be an integrated circuit chip device or a heat generating device.

The apparatus may further include a thermal interface material positioned between the heat dissipation part of the heat dissipation support substrate and the heat generating source.

The thermally conductive cover and the heat generating source may further include a filler including an electrical insulation and a thermally conductive resin.

The heat dissipation unit is characterized in that any one selected from the group consisting of graphene, graphite and carbon nanotubes is further located on the surface of the porous microstructure.

The phase change material is characterized in that a phase change occurs between the first and second heat generating temperatures of the heat generating source.

According to the present invention, the heat dissipation element composed of a porous microstructure part and a phase change material in the form of an open cell provides heat dissipation characteristics to prevent overheating of the heating element with high endothermic capacity due to the phase change phenomenon.

In addition, it provides improved mechanical stiffness and more uniform and higher heat spreading characteristics of the heat dissipation substrate compared to the case where only the phase change material is used.

In addition, the microstructure heat dissipation element may be easily integrated by integrating into various substrate base materials, and may be manufactured by an integrated production technique such as micromachining technology.

In addition, by utilizing the heat dissipation support substrate having a heat dissipation element according to the present invention as a heat dissipation package of a device having a high heat generation density represented by a silicon integrated circuit, a power electronic device, a light emitting diode, a laser diode, a high frequency integrated circuit, etc. It can prevent device malfunction and permanent failure or breakdown due to overheating during operation.

In addition, it reduces the reliability deterioration caused by the heat of the device, the package itself, and the peripheral parts assembled around the heat dissipation package, and reduces the power consumption by suppressing leakage current of the integrated circuit accompanied by the rise of the chip temperature. It offers a number of benefits, including protection from degradation to ensure optimal performance of the device.

The technical effects of the present invention are not limited to those mentioned above, and other technical effects which are not mentioned will be clearly understood by those skilled in the art from the following description.

1 is a schematic view of a heat dissipation support substrate according to an embodiment of the present invention.
2 and 3 are schematic and cross-sectional views of the heat dissipation support substrate of FIG.
4 is a schematic view of a heat generating source assembled to a heat dissipation support substrate according to an exemplary embodiment of the present invention.
5 and 6 are schematic and cross-sectional views of the heat dissipation supporting substrate of FIG.
7 to 9 are views for explaining the heat radiation characteristics of the heat radiation support substrate according to an embodiment of the present invention.
10 is an exploded perspective view of a heat dissipation package according to an embodiment of the present invention.
11 is a schematic view of a heat dissipation package according to an embodiment of the present invention.
12 and 13 are schematic views and cross-sectional views taken along the cutting line AB of FIG. 11.

Hereinafter, exemplary embodiments of the present invention will be described in detail with reference to the accompanying drawings.

While the invention allows for various modifications and variations, specific embodiments thereof are illustrated by way of example in the drawings and will be described in detail below. However, it is not intended to be exhaustive or to limit the invention to the precise forms disclosed, but rather the invention includes all modifications, equivalents, and alternatives consistent with the spirit of the invention as defined by the claims.

When an element such as a layer, region or substrate is referred to as being on another component "on", it will be understood that it may be directly on another element or there may be an intermediate element in between. .

Although the terms first, second, etc. may be used to describe various elements, components, regions, layers, and / or regions, such elements, components, regions, layers, and / or regions It will be understood that it should not be limited by these terms.

1 is a schematic view of a heat dissipation support substrate according to an exemplary embodiment of the present invention, and FIGS. 2 and 3 are schematic views and a cross-sectional view of the heat dissipation support substrate of FIG.

1 to 3, the heat dissipation support substrate 100 includes a base part 110, a heat dissipation part 120, and a connection part 130.

The base unit 110 serves to support a heat source and becomes a base material of the heat dissipation support substrate 100. The base unit 110 may include a plastic resin material such as FR4, a metal oxide material such as alumina, a sintered ceramic material, or a silicon substrate.

The heat dissipation part 120 is provided in the base part 100 and includes a porous microstructure part 121 that conducts heat of a heat generating source, and a phase change material 122 that fills at least a portion of the pores of the porous microstructure part 121. .

The porous microstructure 121 may be an open cell micro structure. For example, the porous microstructure 121 in the form of an open cell may be integrated using a micromachining technique or the like.

The porous microstructure 121 may be in the form of a thermally conductive metal or an alloy thereof. For example, the porous microstructure 121 may include at least one selected from the group consisting of copper, nickel, titanium, aluminum, and alloys thereof.

Since the porous microstructure part 121 of the open cell form provides a high heat conduction path in all directions of up, down, left, and right, the heat absorption characteristics of the phase change material 122 in the phase change process are uniform in the heat radiation part 120 structure. It is possible to maintain and provide a heat spreading function to obtain improved heat dissipation characteristics.

The phase change material 122 may include an organic phase change material or an inorganic phase change material.

For example, the inorganic phase change material may be MgCl ₂ · 6H ₂ O, Al ₂ (SO ₄ ) ₃ · 10H ₂ O, NH ₄ Al (SO ₄ ) ₂ · 12H ₂ O, KAl (SO ₄ ) ₂ · 12H ₂ O, Mg (SO ₃ ) ₂ · 6H ₂ O, SrBr ₂ · 8H ₂ O, Sr (OH) ₂ · 8H ₂ O, Ba (OH) ₂ · 8H ₂ O, Al (NO ₃ ) ₂ · 9H ₂ O , Fe (NO ₃ ) ₂ · 6H ₂ O, NaCH ₂ S ₂ O ₂ · 5H ₂ O, Ni (NO ₃ ) ₂ · 6H ₂ O, Na ₂ S ₂ O ₂ · 5H ₂ O, ZnSO ₄ · 7H ₂ O, CaBr ₂ · 6H ₂ O, Zn (NO ₃ ) ₂ · 6H ₂ O, Na ₂ HPO ₄ · 12H ₂ O, Na ₂ CO ₃ · 10H ₂ O, and CaCl ₂ · 6H ₂ O It may include at least one material.

For example, the organic phase change material may include at least one material selected from the group consisting of tetradecane, octadecane, nonadecane and acetic acid.

The phase change material 122 is characterized in that a phase change occurs between the first heating temperature and the second heating temperature of the heating source. For example, the first exothermic temperature may be lower than the phase change temperature of the phase change material and the second exothermic temperature may be higher than the phase change temperature of the phase change material.

Therefore, when the temperature of the heat generating source is the first heat generating temperature, heat can be radiated by the heat conduction characteristics of the heat radiating portion, and when the temperature of the heat generating source rises to the second heat generating temperature, the heat absorption of the heat radiating portion and the endothermic due to the transition of the phase change material By the characteristic, the temperature of the heat generating source can be prevented from rising above the specific upper limit temperature.

In addition, the heat dissipation unit 120 may further include a thermal conductive layer 123 disposed under the porous microstructure portion 121 and a thermal conductive cover 124 positioned on the porous microstructure portion 121.

The thermal conductive layer 123 may be provided as a thermal via made of a material having high thermal conductivity. For example, the thermal conductive layer 123 may be made of a metal such as copper having high thermal conductivity.

The thermally conductive cover 124 is located on the porous microstructure 121. The thermally conductive cover 124 may be a thin layer made of a material having high thermal conductivity. For example, the thermally conductive cover 124 may be made of a metal having high thermal conductivity.

The thermally conductive cover 124 is used as a chip bonding region in which a heat generating source, for example, a heat generating chip, may be seated and bonded.

On the other hand, a thermal interface material (TIM) may be added to the outer surface of the thermally conductive cover 124 to fill the supply of the contact area to reduce the thermal resistance at the contact interface with the chip.

The thermal conductive layer 123 or the thermal conductive cover 124 may include at least one selected from the group consisting of copper, aluminum, zinc, nickel, and alloys thereof.

Meanwhile, the heat dissipation part 120 may further include any one selected from the group consisting of graphene, graphite, and carbon nanotubes (CNTs) on the surface of the porous microstructure part 121. .

Therefore, by additionally placing such excellent graphene on the surface of the porous microstructure portion 121, it is possible to further improve the thermal conductivity performance of the porous microstructure portion 121, in contact with the porous microstructure portion 121 The heat transfer performance to the phase change material 122 can be further improved. That is, a material such as graphene, graphite, or carbon nanotubes has excellent heat diffusion effect in the horizontal direction, and uniformly heats the phase change material 122 existing in all areas of the porous microstructure 121 in the horizontal direction. It can be delivered.

The connection part 130 is provided in the base part 110 for electrical wiring with the heat generating source. The connection unit 130 may include conductive vias. For example, the connection part 130 may be provided with a plurality of conductive vias, such as metals for electrical wiring, integrated in portions other than the region where the heat dissipation part 120 is formed. The conductive vias may be integrated to penetrate or embed the base portion 110.

The connection part 130, for example, the conductive via may additionally conduct heat from an electrode pad of a heating chip element such as an integrated circuit bonded to the upper surface of each via together with an electrical wiring function to assist heat dissipation of the chip. It also provides functionality.

Therefore, at both ends of these individual vias, a corresponding electrode pad of a heating chip such as an integrated circuit and an electrode pad of a lower printed circuit board and ordinary electrical wiring bonding such as solder bonding or wire bonding, are used. Can be linked through technology.

4 is a schematic view of a heat generating source assembled to a heat dissipation support substrate according to an embodiment of the present invention, and FIGS. 5 and 6 are schematic views and cross-sectional views of the heat dissipation support substrate of FIG.

4 to 6, there is shown an example in which the heat generating source 200 having a high heat generation density requiring heat dissipation and the heat dissipation support substrate 100 according to the present invention are assembled and bonded.

The heat source 200 is a semiconductor chip for communication having a high integration and a power electronics device, such as a silicon integrated circuit (IC) or a power semiconductor that requires high-speed operation, a radio frequency (RF) circuit, The device may be a device having a high heating density, such as a light emitting diode (LED) or a laser diode, or a circuit module including one or more of the heating devices.

6 shows a detailed structure in which the heat generating source 200 and the heat dissipation supporting substrate 100 according to the present invention are bonded and assembled, and the electrodes requiring electrical wiring connection to the outside of the package in the heat generating source 200 such as an integrated circuit chip are shown in FIG. Connections 130 integrated on the heat dissipation support substrate 100 may be connected to each other by applying a conventional chip bonding method.

In addition, the bottom surface of the heat generating source 200 is connected to contact with the surface of the heat conductive cover 124 is integrated on the upper surface of the heat radiating portion 120 area of the heat dissipation support substrate 100 to dissipate heat of the heat generating source 200 It may be transmitted to the outside through the unit 120.

In this case, the thermal interface material 140 may be inserted between the heat generating source 200 and the thermal conductive cover 124 to remove air cavities that may occur in the contact surface and to improve thermal conductivity.

7 to 9 are views for explaining the heat radiation characteristics of the heat radiation support substrate according to an embodiment of the present invention.

FIG. 7 is a cross-sectional view of a portion in which a heat dissipation unit and a heat generating source are assembled, and FIG. 8 is a diagram showing a heat transfer equivalent circuit model for explaining characteristics of the heat dissipation structure of the heat dissipation unit.

In addition, Figure 8 is a temperature change characteristic graph showing the heat radiation characteristics to suppress the temperature rise of the device in the overheating operation of the heating element by applying the heat radiation support substrate according to the present invention.

Referring to FIG. 7, the heat dissipation part includes a porous microstructure part 121 and a phase change material 122 filling at least a portion of the pores of the porous microstructure part 121. In addition, a heat conductive layer 124 is further included below the porous microstructure 121, and a heat conductive cover 124 is further included above the porous microstructure 121.

The heat dissipation unit and the heat source are connected to each other, and the thermal interface material 140 is further included between the heat dissipation unit and the heat source.

7 shows the elements constituting the main heat dissipation path of the heat dissipation support substrate and the equivalent circuit elements in the heat transfer process of each element. That is, the thermal conductive layer 123 is R _via , the porous microstructure 121 is R _f , the phase change material 122 is R _p / C _p , and the thermal conductive cover 124 is R _cover and the thermal interface material 140. In R _TIM , each component is represented as an equivalent circuit element in the heat transfer process of each component.

Referring to Figure 8 describes the heat transfer characteristics of the heat dissipation support substrate according to the present invention. Here, the heat generating source will be described with an example of a heat generating chip such as an integrated circuit.

The heat generation amount (Q) of the heating chip such as an integrated circuit changes according to driving conditions, and heat transfer is performed along the heat dissipation path of the heat dissipation support substrate 100 bonded to the lower part of the corresponding element.

The phase change material, which is a constituent of the heat dissipation element, according to the present invention, has a phase change phenomenon at a predetermined temperature boundary, and in the phase transition process, without a temperature change during the transition process in the form of latent heat, It absorbs heat from and transitions to a state with high entropy, or conversely dissipates heat to the surroundings and changes to a low entropy state.

When the heat generation amount of the heat generating chip increases the temperature (T _i ) of the interface of the porous microstructure according to the present invention to reach the phase transition temperature T _p of the phase change material (T _i = T _p ), Heat dissipation performance proceeds along the right heat dissipation path.

More specifically, the progress of the heat dissipation performance according to the right heat dissipation path, the phase transition of the phase change material in the porous microstructure is maintained while the porous microstructure and the thermally conductive cover interface is maintained at the phase transition temperature.

Therefore, the temperature T _i of this interface behaves as if it is connected to a constant voltage source (T _P ), whereby the temperature T _chip of the heating chip is determined by the heat resistance distribution between the fixed temperature interface and the heating source. The upper limit temperature T _u is determined.

Therefore, unlike the heat dissipation structure that relies only on heat conduction according to the prior art, it is possible to manage the chip temperature by providing heat dissipation performance within a range not exceeding the critical temperature T _c , which is an upper limit of temperature that can guarantee the normal operation and reliability of the chip. It can be effective.

Meanwhile, under operating conditions (T _i <T _p ) where the temperature of the heat dissipation element is lower than the phase transition temperature of the phase change material due to the low heat generation of the chip element, the thermally conductive cover, the porous microstructure, and the phase change as shown in the left heat dissipation path of FIG. Heat dissipation performance is determined by heat conduction through R _cover, R _f , R _p1 , R _via, etc.

Therefore, when the amount of heat generated by the chip element is small, it is desirable to improve the effective thermal conductivity of the porous microstructure portion. In general, in the case of the porous structure, since the thermal conductivity is lower than that of the same thickness structure composed of the same material, in order to improve the overall heat dissipation performance of the heat dissipation support substrate to which the porous microstructure is applied, the thermal conductivity of the applied material is increased or the thermal conductivity is increased. It is preferable to construct a composite by high graphene, graphite, carbon nanotubes and the like by depositing on the surface of the porous microstructure.

The manufacturing example shown in the graph of FIG. 9 corresponds to the heat dissipation supporting substrate including the heat dissipation structure of FIG. 7, and the comparative example shown in the graph of FIG. 9 shows the heat dissipation structure excluding the porous microstructure and the phase change material in the heat dissipation structure of FIG. 7. It is a heat dissipation support substrate comprising a.

It can be seen that the heat dissipation support substrate according to the comparative example cannot prevent the chip temperature from rising above the threshold temperature T _c , which is the upper limit of the temperature at which the chip can ensure normal operation and reliability during intermittent overheating of the chip. Therefore, it can be seen that such a heat dissipation supporting substrate has a limit in dissipating heat in response to intermittent overheating of the chip.

On the contrary, the heat dissipation support substrate according to the manufacturing example according to the present invention has a high endothermic capacity due to the phase change phenomenon due to the heat dissipation element composed of the porous microstructure and the phase change material during the intermittent overheating of the chip. It can be seen that by preventing overheating, the chip temperature can be prevented from rising above a certain upper limit temperature T _u , which is lower than the threshold temperature T _c .

10 is an exploded perspective view of a heat dissipation package according to an embodiment of the present invention, FIG. 11 is a schematic view of a heat dissipation package according to an embodiment of the present invention, and FIGS. 12 and 13 are schematic views of FIG. And cross section.

10 to 13, the heat dissipation package includes a heat generating support substrate 100, a heat generating source 200, and a heat dissipation cover 300.

The heat dissipation support substrate 100 includes a thermally conductive layer 123, a porous microstructure portion 121 positioned on the thermal conductive layer 123, a phase change material 122 filling at least a portion of the pores of the porous microstructure portion 121, and the porous structure. The heat dissipation unit 120 including the thermal conductive cover 124 positioned on the microstructure 121 may include a connection unit 130 for electrical wiring.

The heat generating source 200 is positioned on the heat dissipation support substrate 100 and is electrically connected to the connection unit 130. In this case, the heating source 200 may be an integrated circuit chip device or a heating device.

The heat dissipation cover 300 serves to cover and protect the heat generating source 200. The heat dissipation cover 300 may also include a thermally conductive material to retain heat dissipation characteristics.

Meanwhile, the thermal interface material 140 may be further disposed between the heat dissipation part 120 and the heat generating source 200 of the heat dissipation support substrate 100.

In addition, the heating source 200 and the heat dissipation cover 300 may further include a filler 400 including an electrical insulation and a thermally conductive resin. The filler 400 may further improve the heat dissipation performance by filling the space between the heat generating source 200 and the heat dissipation cover 300.

Accordingly, the filler 400 may include a composite filler that provides electrical insulation properties and good heat transfer characteristics.

On the other hand, the heat dissipating unit 120, any one selected from the group consisting of graphene, graphite and carbon nanotubes may be further located on the surface of the porous microstructure portion 121.

The phase change material at this time is characterized in that the phase change occurs between the first heating temperature and the second heating temperature of the heating source (200).

That is, the first exothermic temperature may be a temperature lower than the phase change temperature of the phase change material and the second exothermic temperature may be a temperature higher than the phase change temperature of the phase change material. Therefore, when the temperature of the heat generating source 200 is the first heat generating temperature, heat can be radiated by the heat conduction characteristics of the heat radiating portion, and when the temperature of the heat generating source rises to the second heat generating temperature, the heat conduction characteristics of the heat radiating portion and the phase change material are different. By the endothermic characteristic according to the temperature of the heating source can be prevented from rising above the specific upper limit temperature.

The heat dissipation element composed of the open cell type porous microstructure part and the phase change material according to the present invention provides a heat dissipation property to prevent overheating of the heat generating element with a high endothermic capacity due to the phase change phenomenon.

In addition, the heat dissipation structure composed of the open cell type porous microstructure part and the phase change material provides improved mechanical stiffness and more uniform and high heat diffusion characteristics of the heat dissipation substrate as compared with the case of using only the phase change material.

In addition, the heat dissipation unit including the porous microstructure and the phase change material may be easily integrated by integrating into various substrate base materials, and may be manufactured by an integrated production technology such as micromachining technology.

In addition, by utilizing the heat dissipation support substrate having a heat dissipation element according to the present invention as a package of a device having a high heat generation density represented by silicon integrated circuits, power electronic devices, light emitting diodes, laser diodes, high frequency integrated circuits, etc. The device can be prevented from malfunctioning due to overheating and permanent failure or breakdown.

In addition, it reduces the reliability deterioration due to heat of the device and the package itself, peripheral components assembled around the heat generating device package, and reduces the power consumption by reducing leakage current of the integrated circuit accompanied by a rise in chip temperature, driving speed and output. It provides various advantages such as preventing the degradation of light and ensuring the optimum performance of the device.

On the other hand, the embodiments of the present invention disclosed in the specification and drawings are merely presented specific examples to aid understanding and are not intended to limit the scope of the present invention. It is apparent to those skilled in the art that other modifications based on the technical idea of the present invention can be carried out in addition to the embodiments disclosed herein.

100: heat dissipation support substrate 110: base portion
120: heat dissipation unit 121: porous microstructure
122: phase change material 123: thermal conductive layer
124: thermal conductive cover 130: connection portion
140: thermal interface material 200: heating source
300: heat shield 400: filler

Claims (15)

A base part for supporting a heat generating source;
A heat dissipation part provided in the base part, the heat dissipation part including a porous microstructure part that conducts heat of the heat generating source and a phase change material to fill at least a portion of the pores of the porous microstructure part; And
And a connection part provided in the base part for electrical wiring with the heat generating source. The method of claim 1,
The heat dissipation portion of the heat dissipation support substrate further comprises a heat conductive layer positioned on the lower portion of the porous microstructure and the heat conductive cover located on the upper portion of the porous microstructure. The method of claim 1,
The phase change material is a heat dissipation support substrate, characterized in that the phase change occurs between the first heating temperature and the second heating temperature of the heating source. The method of claim 1,
The porous microstructure is a heat dissipation support substrate comprising at least one selected from the group consisting of copper, nickel, titanium, aluminum and alloys thereof. The method of claim 1,
The phase change material may include an organic phase change material or an inorganic phase change material. The method of claim 5,
The inorganic phase change material is MgCl ₂ · 6H ₂ O, Al ₂ (SO ₄ ) ₃ · 10H ₂ O, NH ₄ Al (SO ₄ ) ₂ · 12H ₂ O, KAl (SO ₄ ) ₂ · 12H ₂ O, Mg (SO ₃ ) ₂ · 6H ₂ O, SrBr ₂ · 8H ₂ O, Sr (OH) ₂ · 8H ₂ O, Ba (OH) ₂ · 8H ₂ O, Al (NO ₃ ) ₂ · 9H ₂ O, Fe ( NO ₃ ) ₂ · 6H ₂ O, NaCH ₂ S ₂ O ₂ · 5H ₂ O, Ni (NO ₃ ) ₂ · 6H ₂ O, Na ₂ S ₂ O ₂ · 5H ₂ O, ZnSO ₄ · 7H ₂ O, CaBr _{2 · 6H 2 O, Zn (} NO 3) 2 · 6H 2 O, Na 2 HPO 4 · 12H 2 O, Na 2 CO 3 · 10H 2 O, and CaCl ₂ · at least one selected from the group consisting of 6H ₂ O Heat dissipation support substrate comprising a material. The method of claim 5,
The organic phase change material includes at least one material selected from the group consisting of tetradecane, octadecane, nonadecane and acetic acid. The method of claim 2,
The thermally conductive layer or the thermally conductive cover includes at least one selected from the group consisting of copper, aluminum, zinc, nickel and alloys thereof. The method of claim 1,
The heat dissipation unit,
Heat dissipation supporting substrate, characterized in that any one selected from the group consisting of graphene, graphite and carbon nanotubes are further located on the surface of the porous microstructure. Heat dissipation portion and electrical wiring for comprising a thermal conductive layer, a porous microstructure portion located on the thermal conductive layer, a phase change material filling at least a portion of the pores of the porous microstructure portion and a thermally conductive cover positioned on the porous microstructure portion A heat dissipation support substrate including a connection portion;
A heat source disposed on the heat dissipation support substrate and electrically connected to the connection part; And
A heat dissipation cover covering the heat generating source,
The heat dissipation support substrate includes a base part for supporting the heat generating source, and the heat dissipation part and the connection part are provided in the base part. The method of claim 10,
The heat generating package is a heat dissipation package is an integrated circuit chip element or a heat generating element. The method of claim 10,
A heat dissipation package further comprising a thermal interface material positioned between the heat dissipation portion of the heat dissipation support substrate and the heat generating source. The method of claim 10,
A heat dissipation package further comprising a filler comprising an electrical insulation and a thermally conductive resin between the thermally conductive cover and the heat generating source. The method of claim 10,
The heat dissipation unit,
Heat dissipation package, characterized in that any one selected from the group consisting of graphene, graphite and carbon nanotubes on the surface of the porous microstructure further. The method of claim 10,
The phase change material is a heat dissipation package, characterized in that the phase change occurs between the first heating temperature and the second heating temperature of the heating source.

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