CN114823564A

CN114823564A - Semiconductor module and electric control equipment

Info

Publication number: CN114823564A
Application number: CN202210253103.3A
Authority: CN
Inventors: 孟祥飞
Original assignee: Huawei Digital Power Technologies Co Ltd
Current assignee: Huawei Digital Power Technologies Co Ltd
Priority date: 2022-03-15
Filing date: 2022-03-15
Publication date: 2022-07-29

Abstract

The embodiment of the application provides a semiconductor module and an electric control device with the semiconductor module. Relates to the technical field of semiconductor heat dissipation. The semiconductor module is mainly used for improving the heat dissipation effect of the chip. The semiconductor module includes: the semiconductor module comprises a first chip and a first substrate, wherein the first chip is arranged on the first substrate, in addition, the semiconductor module also comprises a radiator and at least one first heat conduction rod, one end of the first heat conduction rod is fixedly connected with the first substrate, and the other end of the first heat conduction rod is fixedly connected with the radiator; the radiator has a cooling medium therein, and the cooling medium is an insulating cooling medium. The heat dissipation of the chip can be realized through the radiator, the heat conducting rod and the cooling medium, the thermal resistance is small, and the heat dissipation effect is good.

Description

Semiconductor module and electric control device

Technical Field

The application relates to the technical field of semiconductor heat dissipation, in particular to a semiconductor module and an electric control device with the semiconductor module.

Background

A semiconductor module is a semiconductor device in which a plurality of chips are packaged together according to a certain circuit structure, for example, an Insulated Gate Bipolar Transistor (IGBT) module, in which a plurality of power chips are integrated on the same substrate.

With the technical development in the field of computers, highly integrated large power consumption chips are increasingly used in semiconductor modules. Therefore, the heat generated during the operation of the chip is increasing, and the demand for heat dissipation of the chip is also increasing.

Fig. 1 shows a conventional IGBT module including a heat dissipation structure. In the IGBT module of fig. 1, only two chips are exemplarily shown. Specifically, each chip 01 is formed on a heat dissipation plate 03 through a solder layer 02, and the heat dissipation plate 03 is disposed on a substrate 05 through another solder layer 04.

Currently, a copper substrate is generally used as the substrate 05 in fig. 1, and a Direct Bonding Copper (DBC) substrate or an Active Metal Brazing (AMB) substrate is generally used as the heat dissipation plate 03. Taking a direct copper-clad substrate as an example, see fig. 1, the direct copper-clad substrate includes a first copper layer 031 and a second copper layer 033, and a ceramic layer 032, the ceramic layer 032 being formed between the stacked first copper layer 031 and second copper layer 033. The first copper layer 031 can be called a bonding pad, that is, the chip 01 is soldered on the bonding pad through the soldering layer 02, and the ceramic layer 032 is not only responsible for heat conduction, that is, the heat dissipated by the chip 01 is conducted to the second copper layer 033 and the substrate 05, so as to realize heat dissipation and cooling of the chip. In addition, in order to realize electrical isolation between the two chips 01, the ceramic layer 032 made of an insulating material also has an insulating electrical isolation function.

However, ceramic layer 032 used as a heat conducting medium in fig. 1 has lower thermal conductivity, higher thermal resistance and poorer heat conducting effect than metal, for example, in some implementation structures, ceramic layer 032 occupies more than 50% of the thermal dissipation resistance of the whole IGBT module. Therefore, when the heat dissipation structure shown in fig. 1 is adopted, the heat dissipation effect is limited, and heat cannot be effectively dissipated to the chip, and particularly, the heat dissipation effect is not ideal for the chip with high power.

Disclosure of Invention

The application provides a semiconductor module and an electric control device having the semiconductor module. The main purpose is to provide a semiconductor module capable of reducing thermal resistance and improving the heat dissipation effect of a chip.

In order to achieve the above purpose, the embodiment of the present application adopts the following technical solutions:

in one aspect, the present application provides a semiconductor module. The semiconductor module can be applied to high-power electric control equipment, such as an automobile (electric automobile), a household appliance (induction cooker) and the like.

The semiconductor module includes: the semiconductor module comprises a first chip and a first substrate, wherein the first chip is arranged on the first substrate, in addition, the semiconductor module also comprises a radiator and at least one first heat conduction rod, one end of the first heat conduction rod is fixedly connected with the first substrate, and the other end of the first heat conduction rod is fixedly connected with the radiator; the radiator has an insulating cooling medium therein.

In the semiconductor module provided by the application, besides the first chip and the first substrate bearing the first chip, the semiconductor module further comprises a first heat conduction rod fixedly connected with the first substrate, and a radiator fixedly connected with the first heat conduction rod. Like this, the heat that the first chip that is the source that generates heat gived off can conduct to first base plate to conduct to the radiator through first heat conduction stick, and, owing to have coolant in the radiator, and then, the heat of conduction to the radiator can be dispersed through coolant, realizes the heat dissipation cooling to the source chip that generates heat.

Based on the heat dissipation path of the heat source chip, the heat of the chip can directly exchange heat with the cooling medium through the first substrate and the first heat conduction rod, so that the heat dissipation structure for dissipating heat by using the cooling medium has high heat conductivity and small heat resistance, reduces the heat dissipation heat resistance of the semiconductor module, and can effectively improve the heat dissipation effect of the whole module, for example, in some achievable structures, the heat dissipation efficiency can be improved by at least 40% compared with the existing heat dissipation structure.

In addition, the first chip needs to be electrically isolated, and then, in the structure provided by the application, the cooling medium accommodated in the heat sink is an insulating medium, so that the electrical isolation of the first chip can be realized. For example, when the semiconductor module further includes a second chip, the second substrate carrying the second chip may also be fixedly connected to the heat sink via the second heat-conducting rod, so that the first chip and the second chip may be prevented from being electrically connected by using an insulating cooling medium.

In a mode that can realize, be provided with a plurality of first heat conduction stick between first base plate and the radiator, along the direction of the first heat conduction stick extending direction of perpendicular to, evenly arrange between a plurality of first heat conduction sticks.

Therefore, heat at a plurality of positions of the first substrate can be conducted to the radiator through the plurality of first heat conduction rods, so that the heat radiation effect is improved.

In an implementation manner, the semiconductor module further includes a plurality of first heat dissipation fins, the plurality of first heat dissipation fins are connected to the first heat conduction rod, and the plurality of first heat dissipation fins are arranged along the extending direction of the first heat conduction rod.

That is, through set up a plurality of radiating fin on first heat conduction stick, like this, can increase heat transfer area to further promote radiating effect, radiating efficiency.

In one implementation, the first substrate is a conductive substrate, for example, a copper substrate.

In a mode that can realize, be provided with a plurality of first heat conduction sticks between first base plate and the radiator, along the direction of the first heat conduction stick extending direction of perpendicular to, a plurality of first heat conduction sticks are evenly arranged, and the first radiating fin on every two adjacent first heat conduction sticks is connected.

When the heat source chip dissipates heat, the heat transferred to different positions on the substrate may be different, for example, the temperature at the position of the substrate close to the chip is higher, and the temperature at the position far from the chip is lower, so that a plurality of first heat conducting rods arranged at intervals on the first substrate may be arranged, that is, the heat on the first substrate is conducted to the heat dissipater through the plurality of first heat conducting rods, so as to improve the heat dissipation effect on the chip.

In addition, the first radiating fins on every two adjacent first heat conduction rods are connected, so that heat on the first heat conduction rods with high heat can be conducted to the first heat conduction rods with low heat through the first radiating fins, and therefore heat equalization of the plurality of first heat conduction rods is achieved, and further radiating efficiency is improved.

In one implementation, the plurality of first heat-conducting rods are arranged at intervals along the circumferential direction of the first substrate, for example, in a uniform and equally-spaced arrangement.

In one implementation, the semiconductor module further includes: the second chip is arranged on the second substrate; one end of any second heat conducting rod is fixedly connected with the second substrate, and the other end of the second heat conducting rod is fixedly connected with the radiator.

That is, the first substrate carrying the first chip here is an independent electrical function unit, the second substrate carrying the second chip is another independent electrical function unit, and the two electrical function units need to be electrically isolated.

It can also be understood that, when the first heat conducting rod and the second heat conducting rod are both electric conductors, for example, the first heat conducting rod and the second heat conducting rod are both metal structural members, so that the heat on the first substrate can be sufficiently conducted to the heat sink to be diffused through the liquid cooling medium. In addition, when the first heat conduction rod and the second heat conduction rod are both electric conductors, the liquid cooling medium needs to be an insulating liquid medium, and then the electric insulation of the two electric function units can be realized.

In one implementation, the second substrate and the first substrate are located on the same side of the heat sink, and the second substrate and the first substrate are placed side by side.

The occupied space of the semiconductor module can be reduced as much as possible; the semiconductor module is more easily assembled in terms of mounting process.

In one realizable manner, the surface of the first substrate provided with the first chip and the surface of the second substrate provided with the second chip are located in the same plane.

With this configuration, the first electrical function unit including the first chip and the first substrate and the second electrical function unit including the second chip and the second substrate can occupy a small mounting space.

In one possible implementation, the first substrate is attached to a surface of the first heat transfer rod, and the second substrate is attached to a surface of the second heat transfer rod in the same plane.

As described above, it is possible to realize a small space occupied by the first electrical function unit and the second electrical function unit, and a miniaturized design.

In one possible implementation, the heat sink is connected to a surface of the first heat conduction rod, and the surface connected to the second heat conduction rod is located in the same plane.

Therefore, the semiconductor module comprising the first electric functional unit, the second electric functional unit and the heat dissipation structure can be miniaturized.

In one possible implementation, the length of the first heat conduction rod is the same as the length of the second heat conduction rod.

In a mode that can realize, be provided with a plurality of second heat conduction stick between second base plate and the radiator, along the direction of perpendicular to second heat conduction stick extending direction, a plurality of second heat conduction stick are evenly arranged.

Like above-mentioned a plurality of first heat conduction stick of setting up, if adopt a plurality of second heat conduction sticks, can pass through a plurality of second heat conduction sticks with the heat of a plurality of positions of second base plate, conduct to the radiator in to promote the radiating effect to the second chip.

In one implementation, the first heat-conducting rod and the second heat-conducting rod are both metal structures, and the shell of the radiator is an insulating structure.

When the metal structural member is used as the heat conducting rod, the metal structural member has higher heat conductivity, so that heat generated by the heating source chip can be greatly transferred to the radiator, the heat dissipation thermal resistance is reduced, and the heat dissipation effect is improved.

In addition, because the housing of the heat sink adopts an insulating structure, electrical isolation between the electrical functional unit comprising the first chip and the electrical functional unit comprising the second chip can be achieved.

In one implementation, the semiconductor module further includes: the first heat conducting rods are connected with the first heat radiating fins at intervals along the extending direction of the first heat conducting rods; the plurality of second radiating fins are connected to the second heat conducting rod and are arranged at intervals along the extending direction of the second heat conducting rod; and the first radiating fins and the second radiating fins are separated, so that the first radiating fins and the second radiating fins are electrically isolated.

In other words, when the first heat conduction rod is provided with the first heat dissipation fin and the second heat dissipation fin is provided with the second heat dissipation fin, the first heat dissipation fin and the second heat dissipation fin are separated, so that the first heat dissipation fin and the second heat dissipation fin are electrically isolated, and the electrical insulation of the two electrical function units is realized.

In one possible implementation, the first heat conducting rod is a solid metal rod, or the first heat conducting rod is a heat pipe.

Of course, in other realizable structures, other heat-conducting rod structures may also be employed.

In one mode, the connection position of the first heat conduction rod and the first substrate is positioned at the bottom surface and/or the side surface of the first substrate; the bottom surface of the first substrate is the surface of the first substrate, which is far away from the first chip; the side surface of the first substrate is a surface connecting the bottom surface of the first substrate and a surface on which the first chip is provided.

That is, the first substrate may be used for connection of the first heat conduction rod except for the surface for mounting the first chip.

In one possible implementation, the cooling medium in the heat sink is a liquid cooling medium.

I.e. in this embodiment, heat can be dissipated by the flowing liquid medium.

In one mode, a containing cavity is formed in the radiator, and at least one partition plate is arranged in the containing cavity to divide the containing cavity into a plurality of flow channels for flowing of the liquid cooling medium.

Through setting up the baffle, will hold the chamber and cut apart into a plurality of runners, can increase the flow path of carrying thermal liquid cooling medium in holding the intracavity to promote the radiating effect.

In one implementation, the first substrate carrying the first chip is disposed inside the package casing, the heat sink is disposed outside the package casing, and the first heat-conducting rod connected to the first substrate penetrates through a wall surface of the package casing and is connected to the heat sink.

In addition, the first substrate carrying the first chip and the heat sink may be disposed in the package housing.

In one mode, the semiconductor module further comprises a driving pump, and the driving pump is communicated with the accommodating cavity to drive the liquid cooling medium to flow in the accommodating cavity.

Through setting up the actuating pump, can promote liquid cooling medium's flow velocity to, also can corresponding promotion radiating effect.

On the other hand, the present application further provides an electronic control device, which includes a driving circuit and the semiconductor module in any implementation manner of the first aspect, where the first chip of the semiconductor module is electrically connected to the driving circuit, for example, when the electronic control device is an automobile, the driving circuit may be a circuit structure that drives a motor to operate.

In the electrical control device that this application provided, owing to contained the semiconductor module in the above-mentioned first aspect arbitrary embodiment, then, the heat that first chip gived off can be conducted to the radiator through first base plate and first heat conduction stick, with the coolant diffusion in through the radiator, that is, compare prior art, do not pile up the heat radiation structure and set up between first chip and first base plate, but with heat drainage to the outside of chip and base plate, diffuse through the coolant, like this, the heat conductivity that the heat radiation structure who forms is right is higher, the thermal resistance is less, this semiconductor module's heat dissipation thermal resistance has been reduced, can effectually promote the radiating effect of whole module.

In addition, in this embodiment, the first chip located in the electronic control device needs to be electrically isolated, and thus, the use of an insulating cooling medium can prevent the first chip from being electrically connected to another chip in the semiconductor module.

In one implementation, the electrically controlled device may be an automobile.

Alternatively, the electronic control device may be another electronic control device with high power.

Drawings

Fig. 1 is a schematic structural diagram of a semiconductor module in the prior art;

fig. 2 is a partial circuit diagram of an electric control apparatus according to an embodiment of the present disclosure;

fig. 3 is a schematic structural diagram of a semiconductor module according to an embodiment of the present disclosure;

fig. 4 is a schematic three-dimensional axial-side structure diagram of a semiconductor module according to an embodiment of the present disclosure;

fig. 5a is a schematic structural diagram of a die according to an embodiment of the present application;

fig. 5b is a schematic structural diagram of a chip package structure according to an embodiment of the present disclosure;

fig. 6 is a schematic three-dimensional axial-side structure diagram of another semiconductor module according to an embodiment of the present disclosure;

fig. 7 is a schematic three-dimensional axial-side structure diagram of another semiconductor module according to an embodiment of the present disclosure;

fig. 8 is a schematic structural diagram of a heat sink according to an embodiment of the present application;

fig. 9 is a schematic three-dimensional axial-side structure diagram of another semiconductor module according to an embodiment of the present disclosure;

fig. 10 is a schematic three-dimensional axial-side structure diagram of another semiconductor module provided in an embodiment of the present application;

fig. 11 is a schematic three-dimensional axial-side structure diagram of another semiconductor module according to an embodiment of the present disclosure;

fig. 12 is a schematic view of a package structure of a semiconductor module according to an embodiment of the present disclosure;

fig. 13 is a schematic view of a package structure of a semiconductor module according to an embodiment of the present disclosure.

Detailed Description

The following embodiments of the present application will be described with reference to the drawings of the embodiments of the present application.

The embodiment of the application provides an electric control device, for example, the electric control device may be an automobile (e.g., a new energy device such as an electric automobile), a household appliance (e.g., an induction cooker, a water heater, an electric oven, etc.), or may also be a mechanical manufacturing device (an electric welding machine), etc.

In such electronic control apparatuses as described above, a semiconductor module device is included. For example, the power semiconductor device includes an Insulated Gate Bipolar Transistor (IGBT) module, where the IGBT module is a controlled voltage-driven power semiconductor device composed of a bipolar transistor and an insulated gate field effect transistor; for another example, the MOSFET module may be a metal-oxide-semiconductor field-effect transistor (MOSFET) module, which may be classified into an N-channel type with a majority of electrons and a P-channel type with a majority of holes according to the polarity of the "channel", and may be generally referred to as an N-type metal-oxide-semiconductor field-effect transistor (NMOSFET) and a P-type metal-oxide-semiconductor field-effect transistor (PMOSFET). In these semiconductor module devices, power may reach several kilowatts or even several tens of thousands of watts.

Fig. 2 is a schematic diagram of an electric vehicle, which illustrates an electric control portion of the vehicle. As shown in fig. 2, the semiconductor module 100 of the electronic control portion may be electrically connected to the driving circuit 200 and the motor 300, respectively, and the driving circuit 200 may drive the semiconductor module 100 to operate, so as to change the current magnitude of the motor 300 by changing the conduction duty ratio of the semiconductor module 100, and further change the rotation speed and the output power of the motor 300.

The above is only a part of the application scenarios of the semiconductor module 100, and the semiconductor module provided in the present application includes the above scenarios, but is not limited to the above application scenarios.

Among them, in the electronic control device such as the above, the semiconductor module at least includes a chip integrated with an Integrated Circuit (IC), and the chip releases heat during operation, especially a high-power chip, and the heat is released more, so that the semiconductor module includes not only a chip for implementing an electrical function, but also a heat dissipation structure for dissipating heat of the chip, so as to ensure normal operation of the chip.

In the embodiment of the application, a novel semiconductor module is provided, and the semiconductor module can reduce heat dissipation thermal resistance by changing a heat dissipation structure, so that the heat dissipation effect of a chip is improved, especially for a chip with large power, the improvement of the heat dissipation effect is prominent, and certainly, the heat dissipation effect is also obvious for a chip with small power. The following describes the achievable structure of the heat dissipation structure and the heat dissipation principle in detail with reference to the accompanying drawings.

Referring to fig. 3, fig. 3 is a schematic structural diagram of a semiconductor module 100 in an embodiment of the present application. In the semiconductor module 100, a substrate 05 is included, a chip 01 is provided on the substrate 05, and the chip 01 may be provided on the substrate 05 through a solder layer 02. For example, the substrate 05 integrated with the chip 01 may be an IGBT module having an electrical function.

Fig. 4 shows a three-dimensional isometric view of the semiconductor module 100 of the present application, in conjunction with fig. 3 and 4, in some implementations, only one chip 01 may be integrated on the substrate 05; alternatively, in some other implementations, a plurality of chips may be integrated on the same substrate 05, as shown in fig. 4, which exemplarily includes two chips 01, and these chips 01 may be electrically connected through bonding wires 12 to implement signal communication between the chips.

The substrate 05 is a conductive substrate, and may be a copper substrate, for example. For example, when a plurality of chips 01 are integrated on the same copper substrate, a surface of any chip 01 is formed on the copper substrate through a solder layer, so that interconnection among the plurality of chips 01 can be realized through the copper substrate, and a surface of any chip 01 away from the copper substrate can be electrically connected to each other through a bonding wire 12, and interconnection among the plurality of chips 01 can also be realized.

In other words, in the above-mentioned fig. 3 and 4, a semiconductor module 100 having an electrical function portion is simply shown, and in order to perform heat dissipation and temperature reduction on a chip of the electrical function portion, in combination with fig. 3 and 4, the semiconductor module 100 further includes a heat dissipation structure, the heat dissipation structure includes a heat sink 07 and at least one heat conduction rod 06, one end of the heat conduction rod 06 is fixedly connected with the substrate 05, and the other end of the heat conduction rod 06 is fixedly connected with the heat sink 07. As shown in fig. 3, the radiator 07 has a cooling medium 08 therein.

In the semiconductor module 100, the electrically functional portions (i.e., the chip and the substrate for carrying the chip) are required to be electrically insulated from the outside, and the cooling medium 08 in the heat sink 07 is required to have an insulating function, for example, an insulating cooling medium may be used. Thus, the electrical connection between the electrical function part and the outside can be avoided.

The heat transfer path of the semiconductor module 100 shown in fig. 3 and 4 is: the heat that chip 01 gived off conducts to bearing its base plate 05 on, and the heat on the base plate 05 conducts to radiator 07 through heat conduction stick 06 again to carry out the heat exchange with cooling medium 08, scatter the heat through cooling medium 08 promptly, realize the cooling to chip 01.

The structure of the heat conductive rod 06 referred to in the present application may be referred to as a rod-like structure, and the shape of the heat conductive rod 06 in a plane perpendicular to the extending direction is not limited in the present application, and may be a circle, a rectangle, or another anisotropic structure.

Based on the above description of the structure, the setting position and the heat dissipation principle of the heat dissipation structure, it can be seen that: the heat radiation structure that this application provided is not piled up between chip and base plate, but is shifted to the outside of the electric function part that chip and base plate formed, like this, the heat that chip 01 gived off can be at first diffused by the great base plate 05 of area, and thereupon, the heat is transmitted to the coolant of radiator 07 by heat conduction stick 06 again, through coolant, realizes thermal dispersion. Like this, this heat radiation structure's heat conductivity is higher, and the thermal resistance is less, can effectual promotion radiating effect, especially, to the great chip of power, the promotion of radiating effect, radiating efficiency can be more obvious. For example, in some application scenarios, the thermal resistance can be increased and decreased by 40%, so that the improvement of the heat dissipation effect is prominent.

In the cooling medium given in the present application, the cooling medium may be a liquid cooling medium, and for example, may be a heat conductive insulating medium such as transformer oil, isopropyl alcohol, pure water, silicone oil, trichlorobiphenyl synthetic oil, and the like. In addition, the cooling medium of the present application may also be a solid cooling medium, for example, a heat conductive insulating medium such as mica, silicone rubber, and insulating paper. Of course, the cooling medium may also be a combination of a liquid cooling medium and a solid cooling medium.

It should be explained that, in some embodiments, the chip 01 shown in fig. 3 may be a die (die), and may also be a chip package structure including the die (die).

Fig. 5a shows a structure of a die, which includes a substrate (may also be referred to as a passive layer) 011 and an active layer 012 formed on the substrate 011, wherein the active layer 012 includes various electronic components (e.g., transistors, resistors, inductors, capacitors, etc.) and metal layers for electrically connecting the electronic components.

When the chip 01 is a bare chip as shown in fig. 5a, the substrate 011 can be formed on the substrate 05 of fig. 4 by a solder layer.

Fig. 5b is a block diagram of a chip package structure, which may include the die (die) shown in fig. 5a, and a package substrate (substrate)013 that carries the die.

When the chip 01 is a chip package structure shown in fig. 5b, a package substrate (substrate)013 can be bonded to the substrate 05 shown in fig. 4.

In an achievable process manner, the heat conducting rod 06 can be fixedly connected with the substrate 05 and the heat sink 07 respectively by using a welding process. In addition, in some processes, the heat conduction rod 06 may penetrate through the wall surface of the heat sink 07 to extend into the accommodating cavity of the heat sink 07, and then be fixed, or the end surface of the heat conduction rod 06 may be directly welded to the wall surface of the heat sink 07.

In some implementations, the housing of the heat sink 07 may be selected to be an insulator and the heat conductive rod 06 may be selected to be an electrical conductor. For example, the heat conducting rod 06 may be a metal structure, which has a high thermal conductivity and a low thermal resistance, and further, the heat conducting rod 06 may conduct more heat to the cooling medium to reduce the thermal resistance of the heat transfer path.

When the heat conducting rod 06 is a metal structural member, a solid metal structure, such as a solid copper column, may be adopted; in addition, a hollow metal structure may also be adopted, and when the hollow metal structure is adopted, the liquid cooling medium in the radiator 07 may flow into the hollow metal structure, so that heat is rapidly exchanged with the cooling medium.

In addition, the heat conducting rod 06 may be a heat pipe (heat pipe).

When the heat pipe is selected as the heat conducting rod 06, an evaporation section (also called a heating section) of the heat pipe is fixedly connected with the substrate 05, and a condensation section (also called a cooling section) is fixedly connected with the radiator 07. Therefore, when the evaporation section of the heat pipe is heated, the liquid in the liquid absorption core of the heat pipe is evaporated and vaporized, the vapor flows to the condensation section under a tiny pressure difference to release heat and condense into liquid, and the liquid flows back to the evaporation section along the porous material of the liquid absorption core under the action of capillary force. So to say, when adopting the heat pipe, can further promote the heat-conduction effect of this heat conduction stick, and then reduce the thermal resistance, promote the radiating efficiency.

The number of the heat conduction rods 06 may be one, or may be plural, as shown in fig. 4, which exemplarily shows that the heat conduction rods 06 connected to the same substrate 05 have three. When the heat conduction rods 06 are plural, the plural heat conduction rods 06 may be uniformly arranged along the circumferential direction of the substrate 05, for example, as shown in fig. 4, the arrangement direction (see P1 direction of fig. 4) of the plural heat conduction rods 06 is perpendicular to the extending direction (see P2 direction of fig. 4) of the heat conduction rods 06, and the plural heat conduction rods 06 are uniformly arranged in the arrangement direction P1 direction, so that the heat at the plural positions of the substrate 05 can be conducted to the heat sink 07, and further, the heat conduction effect is improved, and the heat dissipation efficiency is improved.

In order to further enhance the heat dissipation effect, as shown in fig. 6, fig. 6 is a three-dimensional axial view of the semiconductor module 100 when the heat spreader 07 is not included, in which the semiconductor module 100 includes a plurality of heat dissipation fins 13 in addition to the chip 01 and the substrate 05 carrying the chip 01, and the heat spreader 07 and the heat conduction rod 06, and the plurality of heat dissipation fins 13 are arranged at intervals along the extending direction of the heat conduction rod 06.

To a plurality of radiating fin 13 that set up on any one heat conduction stick 06, can increase each heat conduction stick 06's heat exchange area to promote each heat conduction stick 06's radiating effect, like this, not only the heat conduction stick 06 has the heat conduction effect, has still compromise the radiating effect, for promoting whole heat radiation structure's radiating effect efficiency.

Referring to fig. 6, when a plurality of heat conduction rods 06 are connected to the substrate 05, and each heat conduction rod 06 is provided with a heat dissipation fin 13, the heat dissipation fins 13 on every two adjacent heat conduction rods 06 can be connected.

With such a design, as shown in fig. 6, when the three heat-conducting rods 06 are installed at positions A, B and C on the substrate 05, respectively, and the positions a and B are closer to the high-power chip 01, the heat transmitted to the heat-conducting

rods

063 and 062 is significantly higher than the heat transmitted to the heat-conducting rods 061.

In order to fully utilize the heat conduction effect of each heat conduction rod, if the heat dissipation fins 13 of a plurality of heat conduction rods are connected together, the heat on the

heat conduction rods

063 and 062 can be conducted to the heat conduction rods 061 through the heat dissipation fins 13, so as to rapidly reduce the temperature of the position a and the position B and further improve the heat dissipation efficiency.

Also, the connection position of the heat conduction rod 06 to the substrate 05 has various cases, and for example, the connection position may be at a side surface of the substrate 05 in fig. 6, where the side surface refers to a surface of the substrate 05 adjacent to a surface where the chip 01 is provided. As another example, as shown in fig. 7, the connection position may be at the bottom surface of the substrate 05 in fig. 7, which refers to the surface of the substrate 05 facing away from the surface carrying the chip 01.

In order to further improve the heat dissipation effect on the chip, fig. 8 shows another way that can be realized, fig. 8 shows a structural diagram of the heat sink 07, wherein at least one partition 072 can be arranged in the accommodating cavity 071 of the heat sink 07, and fig. 8 shows that the partitions 072 arranged in the accommodating cavity 071 have four partitions to divide the accommodating cavity 071 into a plurality of channels. In this way, the flow path of the liquid cooling medium in the accommodating cavity 071 can be extended to improve the heat dissipation effect.

In some embodiments, multiple electrical functions may be included, for example, as shown in fig. 9, a semiconductor module 100 structure including two electrical functions is exemplarily shown. The concrete structure includes: the chip module comprises a first substrate 051 and a first chip 011 integrated on the first substrate 051, and further comprises a second substrate 052 and a second chip 012 integrated on the second substrate 052; that is, the first chip 011 and the first substrate 051 form at least a part of the structure of the first electrical functional portion 141, and the second chip 012 and the second substrate 052 form at least a part of the structure of the second electrical functional portion 142.

As shown in fig. 9, the first heat conducting rod 061 has two ends fixedly connected to the first substrate 051 and the heat sink 07, the second heat conducting rod 062 has two ends fixedly connected to the second substrate 052 and the heat sink 07, and the heat sink 07 has an insulating cooling medium therein.

Since the cooling medium accommodated in the heat sink 07 of the present application is an insulating medium, further, electrical insulation of the first electrical function portion 141 and the second electrical function portion 142 can be achieved. It can be simply understood that the current on the first chip 011 does not electrically connect with the second chip 012 through the first substrate 051, the first heat-conductive rod 061, the heat sink 07, the cooling medium 08, the second heat-conductive rod 062, and the second substrate 052.

As in the above-described manner of arranging the first heat-conductive rods 061, the second heat-conductive rods 062 may also have a plurality of second heat-conductive rods 062 arranged uniformly in a direction perpendicular to the extending direction of the second heat-conductive rods 062. Accordingly, the plurality of second heat conduction rods 062 may conduct heat at different positions of the second substrate 052 to the heat sink 07, so as to improve the heat dissipation effect of the second chip 012.

In some alternative mounting structures, as shown in fig. 9, a first substrate 051 carrying the first chip 011 and a second substrate 052 carrying the second chip 012 are located on the same side of the heat sink 07, and the first substrate 051 and the second substrate 052 are placed side by side. From the viewpoint of the mounting process, it is convenient to connect both ends of the first heat-conducting rod 061 to the first substrate 051 and the heat sink 07, respectively, and it is also convenient to connect both ends of the second heat-conducting rod 062 to the second substrate 051 and the heat sink 07, respectively; in terms of occupied space, the layout method of fig. 9 can reduce the occupied area and realize a compact design, compared with the case where the first substrate 051 and the second substrate 052 are arranged in a staggered manner in the direction P3 shown in fig. 9.

It should be explained that: the side-by-side arrangement of the first substrate 051 and the second substrate 052 can be understood as follows: the arrangement direction of the first substrate 051 and the second substrate 052 is parallel to the extending direction of any substrate or is nearly parallel, not perpendicular. Alternatively, by "placed side by side", it is meant that the first substrate 051 and the second substrate 052 are not stacked or staggered, their plate thickness directions coincide, and their respective projections in their plate thickness directions are isolated from each other. Except for the uniform arrangement referred to in this application, a nearly uniform, equally spaced arrangement is also possible.

In addition, in some alternative mounting structures, as shown in fig. 9, a surface of the first substrate 051 on which the first chip 011 is disposed (e.g., the M1 plane of fig. 9), and a surface of the second substrate 052 on which the second chip 012 is disposed (e.g., the M2 plane of fig. 9) are located in the same plane. In this way, the area occupied by the structure can be reduced.

Also, as shown in fig. 9, the surface of the first substrate 051 on which the first heat-conductive rod 061 is disposed (e.g., M3 side of fig. 9), and the surface of the second substrate 052 on which the second heat-conductive rod 062 is disposed (e.g., M4 side of fig. 9) face the same side and are located in the same plane. And, continuing with fig. 9, the surface of the heat spreader 07 to which the first heat-conducting rod 061 is attached and the surface to which the second heat-conducting rod 062 is attached are in the same plane, i.e., as shown in fig. 9, both lie within the plane M5.

In some implementations, the lengths of the first plurality of thermally conductive rods 061 may be the same, and the lengths of the second plurality of thermally conductive rods 062 may be the same.

The length for the first heat-conducting rod 061 and the length for the second heat-conducting rod 062 may be the same or different. Fig. 10 is a schematic structural view of fig. 9 with additional heat dissipation fins. Specifically, the first heat conducting rod 061 is provided with a plurality of first heat dissipating fins 131, and the second heat conducting rod 062 is provided with a plurality of second heat dissipating fins 132, so as to improve the heat dissipating effect of each electrical function portion, for example, the heat dissipating fins may exchange heat with a cooling medium through the heat conducting rod, thereby improving the heat dissipating efficiency.

In some alternative implementations, the first heat dissipation fins 131 and the second heat dissipation fins 132 are made of a metal material. In the first electrical function portion 141, a plurality of the first heat dissipation fins 131 may be connected together, and similarly, in the second electrical function portion 142, a plurality of the second heat dissipation fins 132 may be connected together.

However, in order to electrically isolate the first electrical function portion 141 and the second electrical function portion 142, as shown in fig. 10, the first heat dissipation fins 131 and the second heat dissipation fins 132 are separated and cannot be connected together.

In the above description, the cooling medium may be in a solid state or may be in a liquid state, and then, when the cooling medium is a liquid cooling medium, in order to further improve the heat dissipation effect, in an embodiment, the semiconductor module 100 may further include a driving pump 09 as shown in fig. 11, where the driving pump 09 is communicated with the receiving cavity of the heat sink 07, so that the liquid cooling medium flows in the receiving cavity, which may improve the heat exchange efficiency between heat and the liquid cooling medium, and improve the heat dissipation efficiency of the entire semiconductor module 100.

In a structure that can be realized, the substrate 05 carrying the chip 01 needs to be packaged, as shown in fig. 12, fig. 12 is a structural view after the chip 01 and the substrate 05 are packaged by the package casing 10, fig. 12, the substrate 05 and the chip 01 are disposed inside the package casing 10, and the heat sink 07 can be disposed outside the package casing 10, and the heat conduction rod 06 fixedly connected to the substrate 05 passes through the wall surface of the package casing 10 and is fixedly connected to the heat sink 07 disposed outside the package casing 10.

When the drive pump 09 is packaged, it may be disposed outside the package case 10, as in the case of the heat sink 07. This also facilitates maintenance of the radiator 07 and the drive pump 09.

Instead, in other embodiments, the heat spreader 07 and the substrate 05 carrying the chip may be disposed in the package housing 10 to form a package module.

The material of the package housing 10 can be selected from various materials, for example, a plastic material can be selected, and the plastic housing can not only satisfy the tensile strength, but also satisfy the electrical insulation requirement of the semiconductor module.

In addition, in the packaging process, after the substrate 05 carrying the chip 01 is disposed in the package casing 10, the package casing 10 may be filled with a package insulating layer 15, for example, silica gel.

In order to electrically connect the chip 01 disposed inside the package housing 10 with a circuit structure in the external environment, for example, as shown in fig. 2, the chip 01 needs to be electrically connected with the driving circuit 200 and the motor 300, respectively. Referring to fig. 12, a first connection terminal 111 and a second connection terminal 112 are provided, the first connection terminal 111 electrically connected to the chip 01 extends from inside the package case 10 to the outside and is electrically connected to the driving circuit 200, and similarly, the second connection terminal 112 electrically connected to the chip 01 also extends from inside the package case 10 to the outside to be electrically connected to the motor 300.

Fig. 13 is a view showing a structure of a package including two electric functional portions according to the present application, and in fig. 13, the heat spreader 07 and the heat conduction rod 06 are not shown. The encapsulating insulating layer 15 may electrically isolate the two electrically functional parts.

The particular features, structures, materials, or characteristics may be combined in any suitable manner in any one or more embodiments or examples.

The above description is only for the specific embodiments of the present application, but the scope of the present application is not limited thereto, and any person skilled in the art can easily conceive of the changes or substitutions within the technical scope of the present application, and shall be covered by the scope of the present application. Therefore, the protection scope of the present application shall be subject to the protection scope of the claims.

Claims

1. A semiconductor module, comprising:

a first chip;

a first substrate on which the first chip is disposed;

a heat sink;

one end of any first heat conduction rod is fixedly connected with the first substrate, and the other end of the first heat conduction rod is fixedly connected with the radiator;

wherein the radiator is internally provided with an insulated cooling medium.

2. The semiconductor module according to claim 1, wherein a plurality of the first heat-conductive bars are provided between the first substrate and the heat sink, and the plurality of the first heat-conductive bars are uniformly arranged in a direction perpendicular to an extending direction of the first heat-conductive bars.

3. The semiconductor module according to claim 1, further comprising:

the first heat conducting rods are connected with the first heat radiating fins, and the first heat conducting rods are arranged on the first heat radiating fins.

4. The semiconductor module according to claim 3, wherein a plurality of the first heat conduction rods are provided between the first substrate and the heat sink, and are uniformly arranged in a direction perpendicular to an extending direction of the first heat conduction rods;

and the first radiating fins on every two adjacent first heat conducting rods are connected.

5. The semiconductor module according to any one of claims 1 to 4, characterized by further comprising:

a second chip;

a second substrate on which the second chip is disposed;

and one end of any second heat conduction rod is fixedly connected with the second substrate plate, and the other end of the second heat conduction rod is fixedly connected with the radiator.

6. The semiconductor module of claim 5, wherein the second substrate and the first substrate are on a same side of the heat spreader, and the second substrate is positioned side-by-side with the first substrate.

7. The semiconductor module according to claim 5 or 6, wherein a surface of the first substrate on which the first chip is provided and a surface of the second substrate on which the second chip is provided are located in the same plane.

8. The semiconductor module according to any one of claims 5 to 7, wherein the first substrate is attached to a surface of the first heat conductive rod, and the second substrate is attached to a surface of the second heat conductive rod, which are located in the same plane.

9. The semiconductor module according to any one of claims 5 to 8, wherein the heat sink is connected to a surface of the first heat conductive rod, and a surface connected to the second heat conductive rod are located in the same plane.

10. The semiconductor module according to any one of claims 5 to 9, wherein a length of the first heat conduction rod is the same as a length of the second heat conduction rod.

11. The semiconductor module according to any one of claims 5 to 10, wherein a plurality of the second heat conduction rods are provided between the second substrate and the heat sink, and the plurality of the second heat conduction rods are arranged uniformly in a direction perpendicular to an extending direction of the second heat conduction rods.

12. The semiconductor module according to any one of claims 5 to 11, characterized by further comprising:

the first heat conducting rods are connected with the first heat radiating fins, and the first heat conducting rods are uniformly distributed along the extending direction of the first heat conducting rods;

the second heat conducting rods are connected with the first heat conducting fins, and the second heat conducting rods are arranged on the first heat conducting fins;

and the first heat radiating fins and the second heat radiating fins are separated, so that the first heat radiating fins and the second heat radiating fins are electrically isolated.

13. The semiconductor module of any one of claims 1-12, wherein the first thermally conductive rod is a solid metal rod or the first thermally conductive rod is a heat pipe.

14. The semiconductor module according to any one of claims 1 to 13, wherein a connection position of the first heat conduction rod to the first substrate is at a bottom surface and/or a side surface of the first substrate;

the bottom surface of the first substrate is the surface of the first substrate, which is far away from the first chip;

the side surface of the first substrate is a surface connecting the bottom surface of the first substrate and the surface provided with the first chip.

15. The semiconductor module according to any one of claims 1 to 14, wherein the cooling medium is a liquid cooling medium.

16. The semiconductor module according to claim 15, wherein a receiving chamber is formed in the heat sink, and at least one partition plate is provided in the receiving chamber to divide the receiving chamber into a plurality of flow channels through which the liquid cooling medium flows.

17. The semiconductor module according to any one of claims 1 to 16, further comprising: a package housing;

the first substrate carrying the first chip is arranged in the packaging shell, the radiator is arranged outside the packaging shell, and the first heat conducting rod connected with the first substrate penetrates through the wall surface of the packaging shell to be connected with the radiator.

18. An electrically controlled device, comprising:

the semiconductor module according to any one of claims 1 to 17;

a drive circuit;

wherein the first chip of the semiconductor module is electrically connected to the driving circuit.

19. The electrical control apparatus of claim 18, wherein the electrical control apparatus is an automobile.