KR102016666B1 - 흐름 분배기를 갖는 전달용 컨테이너 - Google Patents
흐름 분배기를 갖는 전달용 컨테이너 Download PDFInfo
- Publication number
- KR102016666B1 KR102016666B1 KR1020170058670A KR20170058670A KR102016666B1 KR 102016666 B1 KR102016666 B1 KR 102016666B1 KR 1020170058670 A KR1020170058670 A KR 1020170058670A KR 20170058670 A KR20170058670 A KR 20170058670A KR 102016666 B1 KR102016666 B1 KR 102016666B1
- Authority
- KR
- South Korea
- Prior art keywords
- hollow
- container
- flow distributor
- lid
- tungsten
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45563—Gas nozzles
- C23C16/45565—Shower nozzles
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/448—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials
- C23C16/4481—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials by evaporation using carrier gas in contact with the source material
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45561—Gas plumbing upstream of the reaction chamber
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
- C23C16/4404—Coatings or surface treatment on the inside of the reaction chamber or on parts thereof
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45563—Gas nozzles
- C23C16/45568—Porous nozzles
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01B—BOILING; BOILING APPARATUS ; EVAPORATION; EVAPORATION APPARATUS
- B01B1/00—Boiling; Boiling apparatus for physical or chemical purposes ; Evaporation in general
- B01B1/005—Evaporation for physical or chemical purposes; Evaporation apparatus therefor, e.g. evaporation of liquids for gas phase reactions
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01D—SEPARATION
- B01D1/00—Evaporating
- B01D1/14—Evaporating with heated gases or vapours or liquids in contact with the liquid
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
- B01J4/00—Feed or outlet devices; Feed or outlet control devices
- B01J4/001—Feed or outlet devices as such, e.g. feeding tubes
- B01J4/002—Nozzle-type elements
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
- B01J4/00—Feed or outlet devices; Feed or outlet control devices
- B01J4/001—Feed or outlet devices as such, e.g. feeding tubes
- B01J4/004—Sparger-type elements
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/448—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials
- C23C16/4481—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials by evaporation using carrier gas in contact with the source material
- C23C16/4482—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials by evaporation using carrier gas in contact with the source material by bubbling of carrier gas through liquid source material
Landscapes
- Chemical & Material Sciences (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Chemical Vapour Deposition (AREA)
- Feeding, Discharge, Calcimining, Fusing, And Gas-Generation Devices (AREA)
Applications Claiming Priority (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US201662335396P | 2016-05-12 | 2016-05-12 | |
| US62/335,396 | 2016-05-12 | ||
| US15/587,095 | 2017-05-04 | ||
| US15/587,095 US10480070B2 (en) | 2016-05-12 | 2017-05-04 | Delivery container with flow distributor |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| KR20170128129A KR20170128129A (ko) | 2017-11-22 |
| KR102016666B1 true KR102016666B1 (ko) | 2019-10-21 |
Family
ID=58707411
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR1020170058670A Active KR102016666B1 (ko) | 2016-05-12 | 2017-05-11 | 흐름 분배기를 갖는 전달용 컨테이너 |
Country Status (7)
| Country | Link |
|---|---|
| US (1) | US10480070B2 (https=) |
| EP (1) | EP3243927A1 (https=) |
| JP (2) | JP6787838B2 (https=) |
| KR (1) | KR102016666B1 (https=) |
| CN (2) | CN207659522U (https=) |
| SG (1) | SG10201703929WA (https=) |
| TW (1) | TWI675702B (https=) |
Families Citing this family (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP3162914A1 (en) * | 2015-11-02 | 2017-05-03 | IMEC vzw | Apparatus and method for delivering a gaseous precursor to a reaction chamber |
| US10480070B2 (en) * | 2016-05-12 | 2019-11-19 | Versum Materials Us, Llc | Delivery container with flow distributor |
| CN110475905B (zh) | 2017-03-03 | 2025-07-15 | 应用材料公司 | 用于增加来自安瓿的通量的设备 |
| DE102017223600A1 (de) * | 2017-12-21 | 2019-06-27 | Siemens Aktiengesellschaft | Verfahren und Vorrichtung zum Reinigen eines eine Materialschädigung aufweisenden Substrats |
| US10731249B2 (en) * | 2018-02-15 | 2020-08-04 | Asm Ip Holding B.V. | Method of forming a transition metal containing film on a substrate by a cyclical deposition process, a method for supplying a transition metal halide compound to a reaction chamber, and related vapor deposition apparatus |
| US11440929B2 (en) | 2018-06-19 | 2022-09-13 | Versum Materials Us, Llc | Bis(diazadiene)cobalt compounds, method of making and method of use thereof |
| US11166441B2 (en) * | 2018-07-13 | 2021-11-09 | Versum Materials Us, Llc | Vapor delivery container with flow distributor |
| KR102707825B1 (ko) * | 2019-04-23 | 2024-09-24 | 삼성전자주식회사 | 코발트 전구체, 이를 이용한 코발트 함유막의 제조 방법 및 이를 이용한 반도체 소자의 제조 방법 |
| US11718912B2 (en) * | 2019-07-30 | 2023-08-08 | Applied Materials, Inc. | Methods and apparatus for calibrating concentration sensors for precursor delivery |
| WO2021183346A1 (en) * | 2020-03-09 | 2021-09-16 | Versum Materials Us, Llc | Limited volume coaxial valve block |
| EP4413175A4 (en) * | 2021-10-05 | 2026-04-29 | Entegris Inc | Precursor delivery systems for determining material levels |
| KR20250157514A (ko) * | 2023-03-10 | 2025-11-04 | 램 리써치 코포레이션 | 플로우-오버-증기 (flow-over-vapor) 앰플 |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2009111359A (ja) | 2007-09-28 | 2009-05-21 | Applied Materials Inc | 原子層堆積チャンバ及び構成部品 |
| JP2012251179A (ja) * | 2011-05-31 | 2012-12-20 | Omron Corp | 原料ガス発生装置 |
Family Cites Families (22)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0819514B2 (ja) | 1986-07-07 | 1996-02-28 | 株式会社豊田中央研究所 | 表面処理方法およびその装置 |
| DE3708967A1 (de) * | 1987-03-19 | 1988-10-06 | Merck Patent Gmbh | Vorrichtung zur erzeugung eines gasgemisches nach dem saettigungsverfahren |
| DE69117385T2 (de) * | 1990-08-10 | 1996-07-11 | Toyoda Chuo Kenkyusho Kk | Verfahren zur Herstellung eines Überzugs aus Nitrid oder Karbonitrid |
| US5078922A (en) * | 1990-10-22 | 1992-01-07 | Watkins-Johnson Company | Liquid source bubbler |
| JP2000252269A (ja) * | 1992-09-21 | 2000-09-14 | Mitsubishi Electric Corp | 液体気化装置及び液体気化方法 |
| US6033479A (en) * | 1998-04-22 | 2000-03-07 | Applied Materials, Inc. | Process gas delivery system for CVD having a cleaning subsystem |
| JP3909792B2 (ja) * | 1999-08-20 | 2007-04-25 | パイオニア株式会社 | 化学気相成長法における原料供給装置及び原料供給方法 |
| GB9929279D0 (en) * | 1999-12-11 | 2000-02-02 | Epichem Ltd | An improved method of and apparatus for the delivery of precursors in the vapour phase to a plurality of epitaxial reactor sites |
| US6561498B2 (en) * | 2001-04-09 | 2003-05-13 | Lorex Industries, Inc. | Bubbler for use in vapor generation systems |
| JP3513505B2 (ja) * | 2001-12-26 | 2004-03-31 | 三菱重工業株式会社 | プラズマcvd装置、光電変換素子および光電変換素子の製造方法 |
| KR20040000689A (ko) * | 2002-06-25 | 2004-01-07 | 삼성전자주식회사 | 화학기상 증착공정의 원료물질 공급장치 |
| US20060185597A1 (en) | 2004-11-29 | 2006-08-24 | Kenji Suzuki | Film precursor evaporation system and method of using |
| GB2432371B (en) * | 2005-11-17 | 2011-06-15 | Epichem Ltd | Improved bubbler for the transportation of substances by a carrier gas |
| US7967911B2 (en) * | 2006-04-11 | 2011-06-28 | Applied Materials, Inc. | Apparatus and methods for chemical vapor deposition |
| WO2010122972A1 (ja) * | 2009-04-21 | 2010-10-28 | 株式会社堀場エステック | 液体原料気化装置 |
| CN102597310B (zh) | 2009-11-02 | 2015-02-04 | 西格玛-奥吉奇有限责任公司 | 固态前体输送组件以及相关方法 |
| US9598766B2 (en) * | 2012-05-27 | 2017-03-21 | Air Products And Chemicals, Inc. | Vessel with filter |
| US9957612B2 (en) * | 2014-01-17 | 2018-05-01 | Ceres Technologies, Inc. | Delivery device, methods of manufacture thereof and articles comprising the same |
| US9964332B2 (en) * | 2014-03-27 | 2018-05-08 | Lam Research Corporation | Systems and methods for bulk vaporization of precursor |
| US10741365B2 (en) * | 2014-05-05 | 2020-08-11 | Lam Research Corporation | Low volume showerhead with porous baffle |
| US9633838B2 (en) | 2015-12-28 | 2017-04-25 | L'Air Liquide, Société Anonyme pour l'Etude et l'Exploitation des Procédés Georges Claude | Vapor deposition of silicon-containing films using penta-substituted disilanes |
| US10480070B2 (en) * | 2016-05-12 | 2019-11-19 | Versum Materials Us, Llc | Delivery container with flow distributor |
-
2017
- 2017-05-04 US US15/587,095 patent/US10480070B2/en active Active
- 2017-05-09 TW TW106115374A patent/TWI675702B/zh active
- 2017-05-11 KR KR1020170058670A patent/KR102016666B1/ko active Active
- 2017-05-12 CN CN201720528774.0U patent/CN207659522U/zh not_active Withdrawn - After Issue
- 2017-05-12 SG SG10201703929WA patent/SG10201703929WA/en unknown
- 2017-05-12 CN CN201710335600.7A patent/CN107365975B/zh active Active
- 2017-05-12 EP EP17170882.9A patent/EP3243927A1/en active Pending
- 2017-05-12 JP JP2017095354A patent/JP6787838B2/ja active Active
-
2019
- 2019-07-05 JP JP2019126273A patent/JP2019214789A/ja not_active Withdrawn
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2009111359A (ja) | 2007-09-28 | 2009-05-21 | Applied Materials Inc | 原子層堆積チャンバ及び構成部品 |
| JP2012251179A (ja) * | 2011-05-31 | 2012-12-20 | Omron Corp | 原料ガス発生装置 |
Also Published As
| Publication number | Publication date |
|---|---|
| TW201742674A (zh) | 2017-12-16 |
| CN207659522U (zh) | 2018-07-27 |
| US10480070B2 (en) | 2019-11-19 |
| JP2019214789A (ja) | 2019-12-19 |
| EP3243927A1 (en) | 2017-11-15 |
| CN107365975A (zh) | 2017-11-21 |
| TWI675702B (zh) | 2019-11-01 |
| CN107365975B (zh) | 2020-05-05 |
| US20170327945A1 (en) | 2017-11-16 |
| KR20170128129A (ko) | 2017-11-22 |
| SG10201703929WA (en) | 2017-12-28 |
| JP6787838B2 (ja) | 2020-11-18 |
| JP2017210683A (ja) | 2017-11-30 |
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