KR102008056B1 - 화학 기상 증착용 반응기 및 이를 포함하는 화학 기상 증착 장치 - Google Patents
화학 기상 증착용 반응기 및 이를 포함하는 화학 기상 증착 장치 Download PDFInfo
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- KR102008056B1 KR102008056B1 KR1020170047189A KR20170047189A KR102008056B1 KR 102008056 B1 KR102008056 B1 KR 102008056B1 KR 1020170047189 A KR1020170047189 A KR 1020170047189A KR 20170047189 A KR20170047189 A KR 20170047189A KR 102008056 B1 KR102008056 B1 KR 102008056B1
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- 238000005229 chemical vapour deposition Methods 0.000 title claims abstract description 43
- 238000006243 chemical reaction Methods 0.000 claims abstract description 139
- 239000010409 thin film Substances 0.000 claims abstract description 40
- 239000007789 gas Substances 0.000 claims description 90
- 239000012495 reaction gas Substances 0.000 claims description 38
- 239000011261 inert gas Substances 0.000 claims description 27
- 238000002347 injection Methods 0.000 claims description 22
- 239000007924 injection Substances 0.000 claims description 22
- 238000000034 method Methods 0.000 claims description 22
- 239000002994 raw material Substances 0.000 claims description 22
- 239000011810 insulating material Substances 0.000 claims description 17
- 238000001816 cooling Methods 0.000 claims description 15
- 238000010438 heat treatment Methods 0.000 claims description 12
- 230000007797 corrosion Effects 0.000 claims description 10
- 238000005260 corrosion Methods 0.000 claims description 10
- 230000004308 accommodation Effects 0.000 claims description 8
- 238000007599 discharging Methods 0.000 claims description 7
- 229910010293 ceramic material Inorganic materials 0.000 claims description 5
- 238000005507 spraying Methods 0.000 claims description 5
- 239000012212 insulator Substances 0.000 claims description 4
- 238000004519 manufacturing process Methods 0.000 abstract description 14
- 238000012423 maintenance Methods 0.000 abstract description 9
- 230000006866 deterioration Effects 0.000 abstract description 5
- 235000012431 wafers Nutrition 0.000 description 48
- 239000013078 crystal Substances 0.000 description 17
- 239000002184 metal Substances 0.000 description 16
- 229910052751 metal Inorganic materials 0.000 description 16
- 150000004767 nitrides Chemical class 0.000 description 14
- 239000000463 material Substances 0.000 description 9
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 7
- 239000001257 hydrogen Substances 0.000 description 7
- 229910052739 hydrogen Inorganic materials 0.000 description 7
- 239000000919 ceramic Substances 0.000 description 6
- 239000002243 precursor Substances 0.000 description 5
- 238000000151 deposition Methods 0.000 description 4
- 239000010453 quartz Substances 0.000 description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- 230000015572 biosynthetic process Effects 0.000 description 3
- 238000005240 physical vapour deposition Methods 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- 239000007921 spray Substances 0.000 description 3
- 239000000758 substrate Substances 0.000 description 3
- 230000015556 catabolic process Effects 0.000 description 2
- 238000006731 degradation reaction Methods 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000009413 insulation Methods 0.000 description 2
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 2
- 239000000376 reactant Substances 0.000 description 2
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 230000032683 aging Effects 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 239000002826 coolant Substances 0.000 description 1
- 238000005536 corrosion prevention Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000004880 explosion Methods 0.000 description 1
- 150000004820 halides Chemical class 0.000 description 1
- 230000008676 import Effects 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 238000003780 insertion Methods 0.000 description 1
- 230000037431 insertion Effects 0.000 description 1
- 239000012774 insulation material Substances 0.000 description 1
- 150000002736 metal compounds Chemical class 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- -1 nitride nitride Chemical class 0.000 description 1
- 238000005121 nitriding Methods 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 238000007711 solidification Methods 0.000 description 1
- 230000008023 solidification Effects 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
- 238000002230 thermal chemical vapour deposition Methods 0.000 description 1
- 238000007736 thin film deposition technique Methods 0.000 description 1
- 238000000927 vapour-phase epitaxy Methods 0.000 description 1
- 238000003466 welding Methods 0.000 description 1
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- H01L21/205—
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- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
- H01L21/67739—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber
- H01L21/67754—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber horizontal transfer of a batch of workpieces
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- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
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- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
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- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
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- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
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- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68764—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a movable susceptor, stage or support, others than those only rotating on their own vertical axis, e.g. susceptors on a rotating caroussel
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- Engineering & Computer Science (AREA)
- Mechanical Engineering (AREA)
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- Organic Chemistry (AREA)
- Metallurgy (AREA)
- Materials Engineering (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
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Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020170047189A KR102008056B1 (ko) | 2017-04-12 | 2017-04-12 | 화학 기상 증착용 반응기 및 이를 포함하는 화학 기상 증착 장치 |
PCT/KR2018/002774 WO2018190519A1 (fr) | 2017-04-12 | 2018-03-08 | Réacteur pour dépôt chimique en phase vapeur et appareil de dépôt chimique en phase vapeur le comprenant |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
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KR1020170047189A KR102008056B1 (ko) | 2017-04-12 | 2017-04-12 | 화학 기상 증착용 반응기 및 이를 포함하는 화학 기상 증착 장치 |
Publications (2)
Publication Number | Publication Date |
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KR20180115044A KR20180115044A (ko) | 2018-10-22 |
KR102008056B1 true KR102008056B1 (ko) | 2019-08-06 |
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KR1020170047189A KR102008056B1 (ko) | 2017-04-12 | 2017-04-12 | 화학 기상 증착용 반응기 및 이를 포함하는 화학 기상 증착 장치 |
Country Status (2)
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KR (1) | KR102008056B1 (fr) |
WO (1) | WO2018190519A1 (fr) |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
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JP2005340834A (ja) * | 2004-05-28 | 2005-12-08 | Samsung Electronics Co Ltd | 反応容器及び試片ホルダーの構造が改善された単原子層蒸着装置 |
JP2015032630A (ja) * | 2013-07-31 | 2015-02-16 | 昭和電工株式会社 | エピタキシャルウェハの製造装置および製造方法 |
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Publication number | Priority date | Publication date | Assignee | Title |
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KR100925568B1 (ko) * | 2007-07-13 | 2009-11-05 | (주)러셀 | 화학 기상 증착장치의 반응챔버 |
KR100950987B1 (ko) * | 2008-02-11 | 2010-04-02 | 주식회사 플라즈마트 | 진공 처리 장치 및 그 처리 방법 |
KR101195125B1 (ko) * | 2010-05-15 | 2012-10-29 | 엔알티 주식회사 | 조립형 진공챔버 |
KR101389011B1 (ko) * | 2012-03-28 | 2014-04-24 | 주식회사 유니텍스 | 소스 컨테이너 및 기상 증착용 반응로 |
US9598766B2 (en) * | 2012-05-27 | 2017-03-21 | Air Products And Chemicals, Inc. | Vessel with filter |
KR101670494B1 (ko) | 2015-06-02 | 2016-10-31 | (주)에스아이 | 화학기상증착장치 |
KR20170011528A (ko) * | 2015-07-23 | 2017-02-02 | 안창오 | 가스 누설 방지 장치 |
-
2017
- 2017-04-12 KR KR1020170047189A patent/KR102008056B1/ko active IP Right Grant
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2018
- 2018-03-08 WO PCT/KR2018/002774 patent/WO2018190519A1/fr unknown
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JP2005340834A (ja) * | 2004-05-28 | 2005-12-08 | Samsung Electronics Co Ltd | 反応容器及び試片ホルダーの構造が改善された単原子層蒸着装置 |
JP2015032630A (ja) * | 2013-07-31 | 2015-02-16 | 昭和電工株式会社 | エピタキシャルウェハの製造装置および製造方法 |
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