KR102003362B1 - 고 선택적 실리콘 산화물 제거를 위한 건식 세정 장치 및 방법 - Google Patents

고 선택적 실리콘 산화물 제거를 위한 건식 세정 장치 및 방법 Download PDF

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Publication number
KR102003362B1
KR102003362B1 KR1020170163124A KR20170163124A KR102003362B1 KR 102003362 B1 KR102003362 B1 KR 102003362B1 KR 1020170163124 A KR1020170163124 A KR 1020170163124A KR 20170163124 A KR20170163124 A KR 20170163124A KR 102003362 B1 KR102003362 B1 KR 102003362B1
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KR
South Korea
Prior art keywords
containing gas
silicon oxide
fluorine
hydrogen
heat treatment
Prior art date
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KR1020170163124A
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English (en)
Korean (ko)
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KR20190063940A (ko
Inventor
이길광
임두호
Original Assignee
무진전자 주식회사
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Publication date
Application filed by 무진전자 주식회사 filed Critical 무진전자 주식회사
Priority to KR1020170163124A priority Critical patent/KR102003362B1/ko
Priority to CN201880077945.XA priority patent/CN111433901B/zh
Priority to PCT/KR2018/011758 priority patent/WO2019107728A1/ko
Publication of KR20190063940A publication Critical patent/KR20190063940A/ko
Application granted granted Critical
Publication of KR102003362B1 publication Critical patent/KR102003362B1/ko

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • H01L21/67034—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for drying
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32174—Circuits specially adapted for controlling the RF discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02041—Cleaning
    • H01L21/02043—Cleaning before device manufacture, i.e. Begin-Of-Line process
    • H01L21/02046—Dry cleaning only
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H01L21/67103—Apparatus for thermal treatment mainly by conduction
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6831—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Power Engineering (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Drying Of Semiconductors (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
KR1020170163124A 2017-11-30 2017-11-30 고 선택적 실리콘 산화물 제거를 위한 건식 세정 장치 및 방법 KR102003362B1 (ko)

Priority Applications (3)

Application Number Priority Date Filing Date Title
KR1020170163124A KR102003362B1 (ko) 2017-11-30 2017-11-30 고 선택적 실리콘 산화물 제거를 위한 건식 세정 장치 및 방법
CN201880077945.XA CN111433901B (zh) 2017-11-30 2018-10-05 用于以高选择性去除二氧化硅的干式清洁设备和方法
PCT/KR2018/011758 WO2019107728A1 (ko) 2017-11-30 2018-10-05 고 선택적 실리콘 산화물 제거를 위한 건식 세정 장치 및 방법

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1020170163124A KR102003362B1 (ko) 2017-11-30 2017-11-30 고 선택적 실리콘 산화물 제거를 위한 건식 세정 장치 및 방법

Publications (2)

Publication Number Publication Date
KR20190063940A KR20190063940A (ko) 2019-06-10
KR102003362B1 true KR102003362B1 (ko) 2019-10-17

Family

ID=66665682

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020170163124A KR102003362B1 (ko) 2017-11-30 2017-11-30 고 선택적 실리콘 산화물 제거를 위한 건식 세정 장치 및 방법

Country Status (3)

Country Link
KR (1) KR102003362B1 (zh)
CN (1) CN111433901B (zh)
WO (1) WO2019107728A1 (zh)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11990348B2 (en) 2020-08-28 2024-05-21 Samsung Electronics Co., Ltd. Wafer processing apparatus and wafer processing method using the same

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR102281826B1 (ko) * 2019-07-08 2021-07-23 세메스 주식회사 기판 처리 장치 및 방법

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2011108663A1 (ja) 2010-03-04 2011-09-09 東京エレクトロン株式会社 プラズマエッチング方法、半導体デバイスの製造方法、及びプラズマエッチング装置
US9324576B2 (en) * 2010-05-27 2016-04-26 Applied Materials, Inc. Selective etch for silicon films
US9704719B2 (en) * 2013-07-16 2017-07-11 Taiwan Semiconductor Manufacturing Co., Ltd. Systems and methods to mitigate nitride precipitates
US9018087B2 (en) * 2013-08-29 2015-04-28 United Microelectronics Corp. Method of fabricating semiconductor device
US8956980B1 (en) * 2013-09-16 2015-02-17 Applied Materials, Inc. Selective etch of silicon nitride
US9299557B2 (en) * 2014-03-19 2016-03-29 Asm Ip Holding B.V. Plasma pre-clean module and process
JP6435667B2 (ja) * 2014-07-01 2018-12-12 東京エレクトロン株式会社 エッチング方法、エッチング装置及び記憶媒体
JP6568769B2 (ja) * 2015-02-16 2019-08-28 東京エレクトロン株式会社 基板処理方法及び基板処理装置
TWI727992B (zh) * 2015-11-11 2021-05-21 美商諾發系統有限公司 具有高產能之超高選擇性多晶矽蝕刻

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11990348B2 (en) 2020-08-28 2024-05-21 Samsung Electronics Co., Ltd. Wafer processing apparatus and wafer processing method using the same

Also Published As

Publication number Publication date
KR20190063940A (ko) 2019-06-10
CN111433901B (zh) 2023-09-19
CN111433901A (zh) 2020-07-17
WO2019107728A1 (ko) 2019-06-06

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