KR101992655B1 - 패턴 형성 방법, 레지스트 패턴, 전자 디바이스의 제조 방법, 및 전자 디바이스 - Google Patents

패턴 형성 방법, 레지스트 패턴, 전자 디바이스의 제조 방법, 및 전자 디바이스 Download PDF

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Publication number
KR101992655B1
KR101992655B1 KR1020177014828A KR20177014828A KR101992655B1 KR 101992655 B1 KR101992655 B1 KR 101992655B1 KR 1020177014828 A KR1020177014828 A KR 1020177014828A KR 20177014828 A KR20177014828 A KR 20177014828A KR 101992655 B1 KR101992655 B1 KR 101992655B1
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South Korea
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group
resin
compound
acid
solvent
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KR1020177014828A
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English (en)
Korean (ko)
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KR20170080644A (ko
Inventor
나오히로 탄고
나오키 이노우에
케이 야마모토
미치히로 시라카와
아키요시 고토
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후지필름 가부시키가이샤
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Publication of KR20170080644A publication Critical patent/KR20170080644A/ko
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Publication of KR101992655B1 publication Critical patent/KR101992655B1/ko

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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/038—Macromolecular compounds which are rendered insoluble or differentially wettable
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
    • G03F7/11—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers having cover layers or intermediate layers, e.g. subbing layers
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/30—Imagewise removal using liquid means
    • G03F7/32—Liquid compositions therefor, e.g. developers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Architecture (AREA)
  • Structural Engineering (AREA)
  • Materials For Photolithography (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
KR1020177014828A 2015-02-26 2016-01-25 패턴 형성 방법, 레지스트 패턴, 전자 디바이스의 제조 방법, 및 전자 디바이스 KR101992655B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JPJP-P-2015-037170 2015-02-26
JP2015037170 2015-02-26
PCT/JP2016/052033 WO2016136354A1 (ja) 2015-02-26 2016-01-25 パターン形成方法、レジストパターン、電子デバイスの製造方法、及び、電子デバイス

Publications (2)

Publication Number Publication Date
KR20170080644A KR20170080644A (ko) 2017-07-10
KR101992655B1 true KR101992655B1 (ko) 2019-06-25

Family

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Application Number Title Priority Date Filing Date
KR1020177014828A KR101992655B1 (ko) 2015-02-26 2016-01-25 패턴 형성 방법, 레지스트 패턴, 전자 디바이스의 제조 방법, 및 전자 디바이스

Country Status (4)

Country Link
JP (1) JP6603303B2 (ja)
KR (1) KR101992655B1 (ja)
TW (1) TWI701710B (ja)
WO (1) WO2016136354A1 (ja)

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JP2017167371A (ja) * 2016-03-16 2017-09-21 Jsr株式会社 ネガ型レジストパターン形成方法
JP2018064093A (ja) * 2016-09-30 2018-04-19 富士フイルム株式会社 半導体チップの製造方法、キット
EP3992713B1 (en) 2019-06-25 2023-08-09 FUJIFILM Corporation Production method for radiation-sensitive resin composition
KR20240042118A (ko) 2021-09-29 2024-04-01 후지필름 가부시키가이샤 감활성광선성 또는 감방사선성 수지 조성물, 레지스트 패턴의 제조 방법

Citations (3)

* Cited by examiner, † Cited by third party
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JP2014010245A (ja) * 2012-06-28 2014-01-20 Fujifilm Corp パターン形成方法、感活性光線性又は感放射線性樹脂組成物、レジスト膜、電子デバイスの製造方法及び電子デバイス
JP2014167614A (ja) * 2013-01-31 2014-09-11 Fujifilm Corp パターン形成方法、並びに、これらを用いた電子デバイスの製造方法、及び、電子デバイス
JP2014194534A (ja) 2013-03-01 2014-10-09 Fujifilm Corp パターン形成方法、感活性光線性又は感放射線性樹脂組成物、レジスト膜、電子デバイスの製造方法、電子デバイス、及び、化合物

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JP2008286924A (ja) * 2007-05-16 2008-11-27 Panasonic Corp 化学増幅型レジスト材料、トップコート膜形成用材料及びそれらを用いたパターン形成方法
US20100183978A1 (en) * 2007-06-15 2010-07-22 Fujifilm Corporation Surface-treating agent for pattern formation and pattern forming method using the treating agent
EP2511766B1 (en) * 2011-04-14 2013-07-31 Rohm and Haas Electronic Materials LLC Topcoat compositions for photoresist and immersion photolithography process using them
JP2013061647A (ja) 2011-09-09 2013-04-04 Rohm & Haas Electronic Materials Llc フォトリソグラフィ方法
JP6013218B2 (ja) * 2012-02-28 2016-10-25 信越化学工業株式会社 酸発生剤、化学増幅型レジスト材料、及びパターン形成方法
JP5846061B2 (ja) * 2012-07-09 2016-01-20 信越化学工業株式会社 パターン形成方法
JP6060577B2 (ja) * 2012-09-13 2017-01-18 Jsr株式会社 ネガ型レジストパターン形成方法
JP6267533B2 (ja) * 2014-02-14 2018-01-24 信越化学工業株式会社 パターン形成方法
TWI582536B (zh) * 2014-10-31 2017-05-11 羅門哈斯電子材料有限公司 圖案形成方法

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2014010245A (ja) * 2012-06-28 2014-01-20 Fujifilm Corp パターン形成方法、感活性光線性又は感放射線性樹脂組成物、レジスト膜、電子デバイスの製造方法及び電子デバイス
JP2014167614A (ja) * 2013-01-31 2014-09-11 Fujifilm Corp パターン形成方法、並びに、これらを用いた電子デバイスの製造方法、及び、電子デバイス
JP2014194534A (ja) 2013-03-01 2014-10-09 Fujifilm Corp パターン形成方法、感活性光線性又は感放射線性樹脂組成物、レジスト膜、電子デバイスの製造方法、電子デバイス、及び、化合物

Also Published As

Publication number Publication date
TW201631632A (zh) 2016-09-01
TWI701710B (zh) 2020-08-11
JP6603303B2 (ja) 2019-11-06
KR20170080644A (ko) 2017-07-10
JPWO2016136354A1 (ja) 2017-08-03
WO2016136354A1 (ja) 2016-09-01

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