KR101986399B1 - 프로그래밍가능 게이트 제어기 시스템 및 방법 - Google Patents

프로그래밍가능 게이트 제어기 시스템 및 방법 Download PDF

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Publication number
KR101986399B1
KR101986399B1 KR1020147024754A KR20147024754A KR101986399B1 KR 101986399 B1 KR101986399 B1 KR 101986399B1 KR 1020147024754 A KR1020147024754 A KR 1020147024754A KR 20147024754 A KR20147024754 A KR 20147024754A KR 101986399 B1 KR101986399 B1 KR 101986399B1
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South Korea
Prior art keywords
programmable gate
power switch
gate controller
controller system
switch
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KR1020147024754A
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Korean (ko)
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KR20140129089A (ko
Inventor
비트 아넷
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지이 하이브리드 테크놀로지스, 엘엘씨
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    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M7/00—Conversion of AC power input into DC power output; Conversion of DC power input into AC power output
    • H02M7/42—Conversion of DC power input into AC power output without possibility of reversal
    • H02M7/44—Conversion of DC power input into AC power output without possibility of reversal by static converters
    • H02M7/48—Conversion of DC power input into AC power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode
    • H02M7/53—Conversion of DC power input into AC power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal
    • H02M7/537—Conversion of DC power input into AC power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only, e.g. single switched pulse inverters
    • H02M7/5387—Conversion of DC power input into AC power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only, e.g. single switched pulse inverters in a bridge configuration
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M1/00—Details of apparatus for conversion
    • H02M1/08—Circuits specially adapted for the generation of control voltages for semiconductor devices incorporated in static converters
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/08—Modifications for protecting switching circuit against overcurrent or overvoltage
    • H03K17/082—Modifications for protecting switching circuit against overcurrent or overvoltage by feedback from the output to the control circuit
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/18—Modifications for indicating state of switch
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/20—Modifications for resetting core switching units to a predetermined state
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
    • H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
    • H03K17/687—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors
    • H03K17/689—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors with galvanic isolation between the control circuit and the output circuit
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M1/00—Details of apparatus for conversion
    • H02M1/08—Circuits specially adapted for the generation of control voltages for semiconductor devices incorporated in static converters
    • H02M1/088—Circuits specially adapted for the generation of control voltages for semiconductor devices incorporated in static converters for the simultaneous control of series or parallel connected semiconductor devices
    • H02M1/092—Circuits specially adapted for the generation of control voltages for semiconductor devices incorporated in static converters for the simultaneous control of series or parallel connected semiconductor devices the control signals being transmitted optically
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
    • H03K17/78—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used using opto-electronic devices, i.e. light-emitting and photoelectric devices electrically- or optically-coupled

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  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Power Conversion In General (AREA)
  • Logic Circuits (AREA)
KR1020147024754A 2012-02-17 2013-02-15 프로그래밍가능 게이트 제어기 시스템 및 방법 Active KR101986399B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US13/385,403 US9071169B2 (en) 2011-02-18 2012-02-17 Programmable gate controller system and method
US13/385,403 2012-02-17
PCT/US2013/026325 WO2013123316A1 (en) 2012-02-17 2013-02-15 Programmable gate controller system and method

Publications (2)

Publication Number Publication Date
KR20140129089A KR20140129089A (ko) 2014-11-06
KR101986399B1 true KR101986399B1 (ko) 2019-06-05

Family

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KR1020147024754A Active KR101986399B1 (ko) 2012-02-17 2013-02-15 프로그래밍가능 게이트 제어기 시스템 및 방법

Country Status (6)

Country Link
US (1) US9071169B2 (enExample)
EP (1) EP2815306B1 (enExample)
JP (1) JP6310400B2 (enExample)
KR (1) KR101986399B1 (enExample)
CN (1) CN104145243A (enExample)
WO (1) WO2013123316A1 (enExample)

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GB2497967B (en) * 2011-12-23 2018-02-21 Reinhausen Maschf Scheubeck Fault-tolerant control systems
CN102545711B (zh) * 2012-02-17 2015-06-24 振发能源集团有限公司 一种新型的离网/并网一体化太阳能发电系统与控制方法
DE102013205706A1 (de) * 2013-03-28 2014-10-02 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Leistungselektronische schaltung und system mit derselben
JP6517624B2 (ja) * 2015-07-17 2019-05-22 三喜電機株式会社 パワーエレクトロニクス回路用の高電圧回路のスイッチング素子開閉制御装置
FR3047378B1 (fr) * 2016-01-29 2018-05-18 STMicroelectronics (Alps) SAS Circuit de fourniture d'un signal video analogique
EP3460979B1 (en) * 2016-07-01 2025-06-04 Rohm Co., Ltd. Semiconductor device
US10181813B2 (en) * 2016-10-27 2019-01-15 Power Integrations, Inc. Half-bridge inverter modules with advanced protection through high-side to low-side control block communication
GB201620104D0 (en) * 2016-11-28 2017-01-11 Powerventure Semiconductor Ltd A system and method of driving a switch circuit
JP6669125B2 (ja) * 2017-04-27 2020-03-18 株式会社デンソー 電力変換装置、および、これを用いた電動パワーステアリング装置
CN111713019A (zh) * 2018-02-12 2020-09-25 诺摩尔有限公司 一种晶体管器件
CA3094062C (en) * 2018-03-27 2023-09-26 Micro Motion, Inc. Electronics including electrical isolation
KR102728482B1 (ko) * 2018-05-30 2024-11-08 서치 포 더 넥스트 리미티드 트랜지스터 및 다이오드를 포함하는 회로 및 소자
DE102018218821A1 (de) * 2018-11-05 2020-05-07 Volkswagen Aktiengesellschaft Vorrichtung und Verfahren zum Ansteuern von Schaltelementen eines Stromrichters
US10979041B1 (en) * 2020-03-13 2021-04-13 Hamilton Sunstrand Corporation Method for monitoring gate drive signals for power module aging effects
US11342855B2 (en) * 2020-04-17 2022-05-24 Infineon Technologies Austria Ag Controlling a switch across an isolation barrier
JP7325632B2 (ja) * 2020-06-01 2023-08-14 三菱電機株式会社 パワー半導体素子の駆動制御装置、及び、パワーモジュール
EP4564678A1 (en) * 2023-12-01 2025-06-04 Infineon Technologies Austria AG Programmable gate driver circuit for an integrated power switch

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Also Published As

Publication number Publication date
EP2815306A1 (en) 2014-12-24
WO2013123316A1 (en) 2013-08-22
US9071169B2 (en) 2015-06-30
EP2815306B1 (en) 2020-09-16
KR20140129089A (ko) 2014-11-06
JP2015515242A (ja) 2015-05-21
JP6310400B2 (ja) 2018-04-11
EP2815306A4 (en) 2015-12-23
CN104145243A (zh) 2014-11-12
US20120212075A1 (en) 2012-08-23

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