KR101974691B1 - 플라즈마 처리 장치 - Google Patents

플라즈마 처리 장치 Download PDF

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Publication number
KR101974691B1
KR101974691B1 KR1020150154648A KR20150154648A KR101974691B1 KR 101974691 B1 KR101974691 B1 KR 101974691B1 KR 1020150154648 A KR1020150154648 A KR 1020150154648A KR 20150154648 A KR20150154648 A KR 20150154648A KR 101974691 B1 KR101974691 B1 KR 101974691B1
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South Korea
Prior art keywords
high frequency
antenna
plasma
frequency antenna
processing
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Korean (ko)
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KR20160053824A (ko
Inventor
쥰 야마와쿠
다츠오 마츠도
치시오 고시미즈
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도쿄엘렉트론가부시키가이샤
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/65—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials
    • H10P14/6502—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed before formation of the materials
    • H10P14/6512—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed before formation of the materials by exposure to a gas or vapour
    • H10P14/6514—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed before formation of the materials by exposure to a gas or vapour by exposure to a plasma
    • H01L21/02315—
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/321—Radio frequency generated discharge the radio frequency energy being inductively coupled to the plasma
    • H01J37/3211—Antennas, e.g. particular shapes of coils
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/321—Radio frequency generated discharge the radio frequency energy being inductively coupled to the plasma
    • H01J37/32119—Windows
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32174—Circuits specially adapted for controlling the RF discharge
    • H01J37/32183—Matching circuits
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32623—Mechanical discharge control means
    • H01J37/32651—Shields, e.g. dark space shields, Faraday shields
    • H01L21/02274—
    • H01L21/683—
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H1/00—Generating plasma; Handling plasma
    • H05H1/24—Generating plasma
    • H05H1/46—Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
    • H10P14/6326—Deposition processes
    • H10P14/6328—Deposition from the gas or vapour phase
    • H10P14/6334—Deposition from the gas or vapour phase using decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
    • H10P14/6336—Deposition from the gas or vapour phase using decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition in the presence of a plasma [PECVD]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Power Engineering (AREA)
  • Electromagnetism (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Plasma Technology (AREA)
  • Drying Of Semiconductors (AREA)
KR1020150154648A 2014-11-05 2015-11-04 플라즈마 처리 장치 Active KR101974691B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JPJP-P-2014-225241 2014-11-05
JP2014225241A JP6582391B2 (ja) 2014-11-05 2014-11-05 プラズマ処理装置

Related Child Applications (1)

Application Number Title Priority Date Filing Date
KR1020190048440A Division KR102033873B1 (ko) 2014-11-05 2019-04-25 플라즈마 처리 장치

Publications (2)

Publication Number Publication Date
KR20160053824A KR20160053824A (ko) 2016-05-13
KR101974691B1 true KR101974691B1 (ko) 2019-05-02

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KR1020150154648A Active KR101974691B1 (ko) 2014-11-05 2015-11-04 플라즈마 처리 장치
KR1020190048440A Active KR102033873B1 (ko) 2014-11-05 2019-04-25 플라즈마 처리 장치

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Country Status (4)

Country Link
US (1) US10325758B2 (https=)
JP (1) JP6582391B2 (https=)
KR (2) KR101974691B1 (https=)
TW (2) TWI679673B (https=)

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US10714960B2 (en) * 2015-12-22 2020-07-14 Intel Corporation Uniform wireless charging device
CN106920732B (zh) * 2015-12-25 2018-10-16 中微半导体设备(上海)有限公司 一种电极结构及icp刻蚀机
US20190088449A1 (en) * 2017-09-21 2019-03-21 Semes Co., Ltd. Substrate treating apparatus and substrate treating method
JP7175239B2 (ja) * 2018-06-22 2022-11-18 東京エレクトロン株式会社 制御方法、プラズマ処理装置、プログラム及び記憶媒体
DE102018116637A1 (de) * 2018-07-10 2020-01-16 TRUMPF Hüttinger GmbH + Co. KG Leistungsversorgungseinrichtung und Betriebsverfahren hierfür
JP7139181B2 (ja) * 2018-07-26 2022-09-20 ワイエイシイテクノロジーズ株式会社 プラズマ処理装置
WO2020141806A2 (ko) * 2018-12-31 2020-07-09 인투코어테크놀로지 주식회사 플라즈마 발생 장치 및 그 동작 방법
US11515122B2 (en) * 2019-03-19 2022-11-29 Tokyo Electron Limited System and methods for VHF plasma processing
JP7579766B2 (ja) * 2020-10-06 2024-11-08 東京エレクトロン株式会社 プラズマ処理装置及びプラズマ処理用コイル
US11401608B2 (en) * 2020-10-20 2022-08-02 Sky Tech Inc. Atomic layer deposition equipment and process method
CN112331546B (zh) * 2020-10-26 2024-06-21 北京北方华创微电子装备有限公司 半导体工艺设备
WO2022146648A1 (en) 2020-12-28 2022-07-07 Mattson Technology, Inc. Induction coil assembly for plasma processing apparatus
KR102323580B1 (ko) * 2021-04-01 2021-11-09 피에스케이 주식회사 플라즈마 발생 유닛 및 기판 처리 장치
JP2022185603A (ja) * 2021-06-03 2022-12-15 株式会社アルバック プラズマ処理装置
CN114171920B (zh) * 2021-12-07 2025-05-23 国开启科量子技术(北京)有限公司 一种基于低温螺旋谐振器的天线调节系统
JP7650834B2 (ja) * 2022-02-16 2025-03-25 東京エレクトロン株式会社 プラズマ処理装置

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KR100292439B1 (ko) * 1996-06-18 2001-06-01 기바츠 시노하라 플라즈마발생장치및이플라즈마발생장치를사용한표면처리장치
JP2012209468A (ja) * 2011-03-30 2012-10-25 Tokyo Electron Ltd プラズマ処理装置

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US5731565A (en) * 1995-07-27 1998-03-24 Lam Research Corporation Segmented coil for generating plasma in plasma processing equipment
US6045618A (en) * 1995-09-25 2000-04-04 Applied Materials, Inc. Microwave apparatus for in-situ vacuum line cleaning for substrate processing equipment
US6164241A (en) * 1998-06-30 2000-12-26 Lam Research Corporation Multiple coil antenna for inductively-coupled plasma generation systems
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US20070170867A1 (en) * 2006-01-24 2007-07-26 Varian Semiconductor Equipment Associates, Inc. Plasma Immersion Ion Source With Low Effective Antenna Voltage
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JP5227245B2 (ja) 2009-04-28 2013-07-03 東京エレクトロン株式会社 プラズマ処理装置
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JP5592098B2 (ja) * 2009-10-27 2014-09-17 東京エレクトロン株式会社 プラズマ処理装置及びプラズマ処理方法
JP5606821B2 (ja) * 2010-08-04 2014-10-15 東京エレクトロン株式会社 プラズマ処理装置
JP5800547B2 (ja) * 2011-03-29 2015-10-28 東京エレクトロン株式会社 プラズマ処理装置及びプラズマ処理方法
KR101328520B1 (ko) * 2012-05-17 2013-11-20 한양대학교 산학협력단 플라즈마 장비
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JP2012209468A (ja) * 2011-03-30 2012-10-25 Tokyo Electron Ltd プラズマ処理装置

Also Published As

Publication number Publication date
KR20160053824A (ko) 2016-05-13
KR20190045141A (ko) 2019-05-02
TWI679673B (zh) 2019-12-11
TW201630031A (zh) 2016-08-16
KR102033873B1 (ko) 2019-10-17
TW202013429A (zh) 2020-04-01
US10325758B2 (en) 2019-06-18
US20160126063A1 (en) 2016-05-05
JP2016091812A (ja) 2016-05-23
JP6582391B2 (ja) 2019-10-02

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