KR101935958B1 - Apparatus and Method for treating substrate - Google Patents

Abstract

The present invention relates to an apparatus and a method for processing a substrate using a plasma. The substrate processing apparatus includes a process chamber for providing a space in which a process is performed, a substrate support member for supporting the substrate in the process chamber, a gas supply member for supplying a process gas to the substrate placed on the substrate support member, And a ring assembly disposed to surround the substrate support member, wherein the ring assembly includes a ring member and an adjustment member for adjusting a relative height of the ring member in each region.

Description

[0001] APPARATUS AND METHOD FOR TREATING SUBSTRATE [0002]

The present invention relates to an apparatus and a method for processing a substrate, and more particularly, to an apparatus and a method for processing a substrate using plasma.

Plasma is a gas state generated by a strong electric field or RF electromagnetic fields and composed of ions, electrons, radicals, and the like. The semiconductor device fabrication process employs a plasma to perform the etching process. The etching process is performed by colliding the particles excited with the plasma state with the thin films deposited on the substrate.

In the etching process, it is required to uniformly etch the pattern on the substrate. For this purpose, the plasma must be uniformly distributed on the substrate. However, due to various factors in the actual process, the density of the plasma varies depending on the region.

Korea Patent: 10-2010-0138687

The present invention provides an apparatus and method for uniformly etching a substrate using plasma.

The present invention also provides an apparatus and a method for controlling the etching rate of each region of a substrate.

An embodiment of the present invention relates to an apparatus and a method for processing a substrate using a plasma. The substrate processing apparatus includes a process chamber for providing a space in which a process is performed, a substrate support member for supporting the substrate in the process chamber, a gas supply member for supplying a process gas to the substrate placed on the substrate support member, A plasma source that excites the substrate support member into a plasma state, and a ring assembly disposed to surround the substrate support member; The ring assembly includes a ring member and an adjusting member for adjusting a relative height of the ring member in each region.

The ring member is integrally provided, and the adjustment member may include coupling rods respectively connected to different regions of the ring member, and a driver provided to move the coupling rods independently of each other. The adjustment member can adjust the relative height of the ring member by area by tilting the ring member relative to the ground. The ring member is provided in a plurality of arc-shaped bodies as viewed from above, and the adjustment member is provided to move the coupling rods connected to each of the bodies and the coupling rods independently of each other And a driver. The up and down movement may tilt the body such that the region of the body is positioned higher along the direction away from the substrate. The ring member includes a first ring provided to enclose the substrate support member and a second ring provided to enclose the first ring, wherein the adjustment member can adjust the relative height of the second ring by region . The first ring may be a focus ring, and the second ring may be an insulating ring.

A substrate processing method is a method of processing a substrate using a process gas excited in a plasma state, the method comprising: supplying the process gas to a substrate supported by a substrate support member; Heights are provided different from each other to control the etching rate of the edge region of the substrate.

The ring member is integrally provided and can be tilted with respect to the paper surface to adjust the relative height of the ring member in each region. The ring member is provided with divided bodies, and the adjustment member can move each body independently to adjust a relative height of the ring member in each region.

According to the embodiment of the present invention, the substrate can be uniformly etched.

According to an embodiment of the present invention, the plasma density distribution in the process chamber can be adjusted for each region.

1 is a cross-sectional view illustrating a substrate processing apparatus according to a first embodiment of the present invention.
2 is a plan view showing the ring assembly of FIG.
3 is a cross-sectional view of the ring assembly of FIG. 2 taken along line aa '.
4 is a plan view showing a second embodiment of the ring assembly of the present invention.
5 is a cross-sectional view of the ring assembly of FIG. 4 taken along line bb '.
6 is a cross-sectional view showing a third embodiment of the ring assembly of the present invention.

The embodiments of the present invention can be modified into various forms and the scope of the present invention should not be interpreted as being limited by the embodiments described below. The present embodiments are provided to enable those skilled in the art to more fully understand the present invention. Accordingly, the shapes of the components and the like in the drawings are exaggerated in order to emphasize a clearer description.

In an embodiment of the present invention, a substrate processing apparatus and method for etching a substrate using plasma will be described. However, the present invention is not limited thereto, and can be applied to various kinds of apparatuses and methods for performing a process using a plasma.

1 is a cross-sectional view illustrating a substrate processing apparatus according to a first embodiment of the present invention. Referring to FIG. 1, a substrate processing apparatus 10 includes a process chamber 100, a gas supply member 200, a plasma source 300, a substrate support member 400, and a ring assembly 500.

The process chamber 100 provides a space through which the process proceeds. The process chamber 100 is provided in a cylindrical shape. The process chamber 100 is provided with a metal material. For example, the process chamber 100 may be provided with an aluminum material. An exhaust hole 111 is formed in the bottom surface of the process chamber 100. The exhaust hole 111 is connected to the exhaust line 115 on which the pump 113 is mounted. The vacuum pressure provided through the exhaust line 115 reduces the pressure inside the process chamber 100. The by-products generated during the process and the gas remaining in the process chamber 100 are discharged to the outside through the exhaust line 115. An opening is formed in one side of the process chamber 100. The opening functions as a passage through which the substrate W is carried in or out.

A liner 150 is provided within the process chamber 100. The liner 150 is provided in a cylindrical shape with open top and bottom. The liner 150 has a radius corresponding to the inner surface of the process chamber 100. The liner 150 is positioned to enclose the inner surface of the process chamber 100. The liner 150 prevents the inner surface of the process chamber 100 from being damaged or reaction by-products from depositing on the inner surface.

A baffle 170 is provided within the process chamber 100. The baffle 170 is provided in an annular ring shape. The baffle 170 is positioned between the liner 150 and the substrate support member 400. A plurality of holes 171 are formed in the baffle 170. The baffle 170 regulates the flow of process gas across the entire interior region of the process chamber 100. For example, the baffle 170 may allow process gas to flow uniformly within the process chamber 100.

The gas supply member 200 supplies a process gas into the process chamber 100. The gas supply member 200 includes a gas reservoir 250, a gas supply line 230, and a gas inlet port 210. The gas supply line 230 connects the gas storage part 250 and the gas inlet port 210. The process gas stored in the gas storage unit 250 is supplied to the gas inlet port 210 through the gas supply line 230. A valve is provided in the gas supply line 230 to open or close the passage, or to control the flow rate of the gas flowing in the passage.

The plasma source 300 excites the process gas into the plasma state within the process chamber 100. As the plasma source 300, an inductively coupled plasma (ICP) source may be used. The plasma source 300 includes an antenna 310 and an external power source 330. The antenna 310 is disposed on the outer side of the process chamber 100. The antenna 310 is provided in a spiral shape with a plurality of turns and is connected to the external power source 330. The antenna 310 receives power from the external power source 330.

A substrate support member (400) supports the substrate (W) within the process chamber (100). The substrate support member 400 is provided with an electrostatic chuck 400 that supports the substrate W using an electrostatic force. Optionally, the substrate support member 400 may support the substrate W in a variety of ways, such as mechanical clamping.

The electrostatic chuck 400 includes a dielectric plate 410, a base 430, and an insulating plate 450. The dielectric plate 410, the base 430, and the insulating plate 450 are sequentially disposed along the top-down direction.

The substrate W is directly placed on the upper surface of the dielectric plate 410. The dielectric plate 410 is provided in a disc shape. The dielectric plate 410 may have a smaller radius than the substrate W. [ A lower electrode 414 is disposed inside the dielectric plate 410. A lower power supply 414 is connected to the lower electrode 414 and receives power from the lower power supply 414. The powered lower electrode 414 provides an electrostatic force such that the substrate W is attracted to the dielectric plate 410. Inside the dielectric plate 410, a heater 416 for heating the substrate W is provided. The heater 416 may be positioned below the lower electrode 414. [ The heater 416 may be provided as a helical coil.

The base 430 supports the dielectric plate 410. The base 430 is positioned below the dielectric plate 410 and is fixedly coupled to the dielectric plate 410. The upper surface of the base 430 has a stepped shape such that its central region is higher than the edge region. The central portion of the upper surface of the base 430 has an area corresponding to the bottom surface of the dielectric plate 410. A cooling passage 432 is formed in the base 430. The cooling passage 432 is provided as a passage through which the cooling fluid circulates. The cooling channel 432 may be provided in a spiral shape inside the base 430.

The insulating plate 450 is located under the base 430. [ The insulating plate 450 is provided in a size corresponding to the base 430. An insulating plate 450 is positioned between the bottom surface of the process chamber 100 and the base 430. The insulating plate 450 is provided as an insulating material and electrically insulates the base 430 from the process chamber 100.

FIG. 2 is a plan view of the ring assembly of FIG. 1, and FIG. 3 is a cross-sectional view of the ring assembly of FIG. 2 taken along line a-a '. Referring to FIGS. 2 and 3, the ring assembly 500 includes a ring member 540 and an adjusting member 550. The ring member 540 includes a first ring 510 and a second ring 530. The first ring 510 is disposed to surround the dielectric plate 410. The first ring 510 may be a focus ring that focuses the plasma onto the substrate W. The first ring 510 is provided in an annular ring shape. The upper surface of the first ring 510 is provided in a shape of a stepped portion whose outer side is higher than that of the inner side. The upper surface inner side portion of the first ring 510 is provided so as to have the same height as the dielectric plate 410. The upper side inner side portion of the first ring 510 supports the bottom edge region of the substrate W. [ The outer side of the first ring 510 is provided to surround the side area of the substrate W. [

The second ring 530 is disposed so as to surround the first ring 510. The second ring 530 has a ring shape integrally provided. The second ring 530 may be an insulating ring. The second ring 530 is disposed at a predetermined distance from the first ring 510 along the radial direction. The second ring 530 regulates the density of the plasma by region. In particular, the second ring 530 adjusts the density of the plasma in the edge region of the substrate W adjacent to the second ring 530. Accordingly, the second ring 530 can control the etching rate of the edge region of the substrate W in each region. The second ring 530 is provided so that the relative heights can be adjusted differently for each of the areas. According to one example, the second ring 530 may be provided so as to be tiltable with respect to the ground. The residual time of the plasma is relatively long inside the region of the second ring 530 having a relatively high height.

For example, the first edge region A of the substrate W may exhibit a relatively low etch rate as compared to the entire region of the substrate W. 3, the relative height between the first edge region A of the substrate W and the first region A 'of the second ring 530 adjacent to the substrate W can be increased. As a result, the density of the plasma is relatively concentrated in the first edge region A of the substrate W, and the entire region of the substrate W can be uniformly etched.

The adjustment member 550 adjusts the relative height of the second ring 530 in each region. The adjustment member 550 includes a coupling rod 552, a driver 554, and a controller 556. A plurality of coupling rods 552 are provided. Each coupling rod 552 is coupled to a different region of the second ring 530. The coupling rod 552 is provided so that its longitudinal direction is up and down.

The actuator 554 moves the plurality of coupling rods 552 independently of each other. The driver 554 moves the coupling rods 552 in the vertical direction.

The controller 556 controls the driver 554. The controller 556 controls the driver 554 so that the entire area of the substrate W is uniformly etched according to the etching rate of the area of the substrate W. [ According to one example, if the first edge region A of the substrate W is less etched than the entire region thereof, the first region A 'of the second ring 530 is positioned higher than the other region, Lt; / RTI >

Next, a second embodiment of the ring assembly 500 of the present invention will be described.

FIG. 4 is a plan view showing a second embodiment of the ring assembly of the present invention, and FIG. 5 is a sectional view of the ring assembly of FIG. 4 taken along the line b-b '. Referring to FIGS. 4 and 5, the second ring 530 may be provided with a plurality of divided bodies 530a, 530b, 530c, and 530d. Each of the bodies 530a, 530b, 530c, and 530d is provided in an arc shape, and they may have a ring shape in combination. A coupling rod 552 is coupled to each of the bodies 530. Each of the bodies 530a, 530b, 530c, and 530d is tilted independently of each other as the coupling rod 552 moves. Each of the bodies 530a, 530b, 530c, and 530d may be tilted upwardly as the upper surface thereof is away from the substrate W. [ The tilted body 530a may allow more plasma to remain in the first edge region A of the substrate W adjacent thereto. Accordingly, the tilted body 530a is positioned relatively higher than the other bodies 530b, 530c, and 530d. As a result, the etching rate of the first edge region A of the substrate W is improved. Each of the bodies 530 is hinged to the inner surface of the fixed rod 553 and tilted as the coupling rod 552 is moved up and down. For example, each of the bodies 530a, 530b, 530c, and 530d may be coupled with a fixing rod 553 and a coupling rod 552 sequentially in the radial direction. The fixing rod 553 can be hinged to the body 530. Accordingly, the coupling rod 552 can be moved up and down to tilt the body 530.

6 is a cross-sectional view showing a third embodiment of the ring assembly of the present invention. Referring to FIG. 6, the adjustment member 550 may include a plurality of first coupling rods 552 and second coupling rods 558. The first coupling rods 552 may be coupled to the first ring 510 and the second coupling rods 558 may be coupled to the second ring 530, respectively. The driver 554 can move the first coupling rods 552 and the second coupling rods 558 independently up and down.

Also, unlike the above-described embodiment, the plasma source 300 may be capacitively coupled plasma (CCP). The capacitively coupled plasma may include a first electrode and a second electrode located within the process chamber 100. The first electrode and the second electrode are disposed at the top and the bottom in the interior of the process chamber 100, respectively, and the respective electrodes may be arranged vertically in parallel with each other. Either one of the electrodes can apply high-frequency power and the other electrode can be grounded. An electromagnetic field is formed in the space between both electrodes, and the process gas supplied to this space can be excited and excited into a plasma state.

In the example described above, the second ring 530 of the two rings is described as being tilted or moved up and down for each region. However, the first ring 510 can be provided to be tilted or moved up and down by area.

Also, the ring member 540 may be provided only as one ring of the first ring and the second ring, and the regulating member 550 may move the one ring up and down by region.

The foregoing description is merely illustrative of the technical idea of the present invention, and various changes and modifications may be made by those skilled in the art without departing from the essential characteristics of the present invention. Therefore, the embodiments disclosed in the present invention are intended to illustrate rather than limit the scope of the present invention, and the scope of the technical idea of the present invention is not limited by these embodiments. The scope of protection of the present invention should be construed according to the following claims, and all technical ideas within the scope of equivalents should be construed as falling within the scope of the present invention.

100: process chamber 200: gas supply member
300: plasma source 400: substrate support member
500: ring assembly 510: first ring
530: second ring 540: ring member
550: Adjustable member

Claims (10)

A process chamber for providing a space in which a process is performed;
A substrate support member for supporting the substrate in the process chamber;
A gas supply member for supplying the process gas to the substrate placed on the substrate support member;
A plasma source for exciting the process gas into a plasma state;
A ring assembly disposed to surround the substrate support member;
The ring assembly includes:
A ring member;
And an adjusting member for adjusting a relative height of the ring member in each region,
Wherein the ring member is provided with a plurality of arc-shaped bodies as viewed from above,
Wherein the adjustment member comprises:
Coupling rods connected to each of the bodies;
A driver provided to move the coupling rods independently of each other;
And a fixing member located at one side of the coupling rods,
The body,
A fixing member hinged to the fixing member,
And the body is tilted in accordance with the upward and downward movement of the coupling rod. The method according to claim 1,
Wherein a plurality of said ring members are provided,
Wherein a part of the plurality of ring members is integrally provided,
Wherein the adjustment member comprises:
Coupling rods respectively connected to different regions of the ring member integrally provided;
Further comprising a driver provided to vertically move the coupling rods independently of each other. 3. The method of claim 2,
Wherein the adjustment member tilts the integrally provided ring member with respect to the ground to adjust the relative height of the ring member in each region. delete The method according to claim 1,
Wherein the body is tilted with respect to the hinge so that an area of the upper surface of the body that is farther from the substrate is moved upward. The method of claim 5, wherein
The ring member
A first ring provided to surround the substrate support member;
And a second ring provided to surround the first ring;
The first ring being provided as a unitary body,
Wherein the adjusting member adjusts the relative height of the body. The method according to claim 6,
Wherein the first ring is a focus ring and the second ring is an insulating ring. A method for processing a substrate using the substrate processing apparatus according to claim 1,
Wherein the process gas is supplied in a plasma state to a substrate supported by the substrate support member and the ring members are provided at different heights for the regions of the ring member provided to surround the substrate support member, Wherein the etching rate of the substrate is controlled. 9. The method of claim 8,
Wherein a plurality of the ring members are provided, and a part of the plurality of ring members is integrally provided, and the integrally provided ring member is tilted with respect to the ground to adjust the relative height per region. 9. The method of claim 8,
Wherein a plurality of the ring members are provided, and a part of the plurality of ring members is provided with divided bodies, and the adjustment member adjusts a relative height of the ring member by each region by independently moving each body, .

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