KR101778972B1 - Apparatus for supplying power, and apparatus for treating substrate employing the same - Google Patents

Apparatus for supplying power, and apparatus for treating substrate employing the same Download PDF

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Publication number
KR101778972B1
KR101778972B1 KR1020150151079A KR20150151079A KR101778972B1 KR 101778972 B1 KR101778972 B1 KR 101778972B1 KR 1020150151079 A KR1020150151079 A KR 1020150151079A KR 20150151079 A KR20150151079 A KR 20150151079A KR 101778972 B1 KR101778972 B1 KR 101778972B1
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KR
South Korea
Prior art keywords
antenna
current
impedance
chamber
plasma
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KR1020150151079A
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Korean (ko)
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KR20170050046A (en
Inventor
하창승
임두호
이승배
Original Assignee
세메스 주식회사
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Priority to KR1020150151079A priority Critical patent/KR101778972B1/en
Publication of KR20170050046A publication Critical patent/KR20170050046A/en
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Publication of KR101778972B1 publication Critical patent/KR101778972B1/en

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32174—Circuits specially adapted for controlling the RF discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32192—Microwave generated discharge
    • H01J37/32211—Means for coupling power to the plasma
    • H01J37/3222—Antennas
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32192—Microwave generated discharge
    • H01J37/32302—Plural frequencies
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H1/00—Generating plasma; Handling plasma
    • H05H1/24—Generating plasma
    • H05H1/46—Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy
    • H05H2001/4682—

Abstract

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a power supply apparatus for controlling a phase of a current supplied to a plurality of antennas to easily perform a plasma process, and a substrate processing apparatus using the same. A power supply apparatus according to an embodiment of the present invention includes: a high frequency power supply for providing a high frequency power; And a plasma source including a first antenna for generating plasma using the high frequency power, a second antenna, and a current phase adjusting unit connected between the first and second antennas, The phase difference between the first current applied to the first antenna and the second current applied to the second antenna may be adjusted to 0 ° or 180 °. Wherein the current phase adjusting unit comprises: at least one variable element; And a controller for controlling the element value of the variable element to control the phase difference between the first current and the second current to be 0 ° or 180 °.

Description

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a power supply apparatus, and a substrate processing apparatus using the same.

BACKGROUND OF THE INVENTION 1. Field of the Invention [0001] The present invention relates to a power supply apparatus and a substrate processing apparatus using the same, and more particularly, to a plasma processing apparatus for efficiently controlling a plasma process by adjusting the phase of currents flowing through a plurality of antennas.

The semiconductor manufacturing process may include processing the substrate using plasma. For example, a chamber that produces a plasma in an etching or ashing process during a semiconductor manufacturing process may be used, and the substrate may be etched or ashed using the plasma.

In recent years, plasma processing apparatuses for processing a large area substrate have been used as the size of the substrate processed using the plasma increases, but the uniformity of the plasma has been reduced in such a plasma processing apparatus. In order to compensate for this, a method of controlling the density of the plasma in the chamber by using a plurality of plasma sources has been developed, and the plasma density is controlled by controlling the power ratio supplied to a plurality of plasma sources. However, there is a problem that it is difficult to control a precise power ratio due to a capacitance variation inside the device.

The present invention is intended to easily control the electric field and plasma distribution in a plasma process.

The present invention is also intended to facilitate the uniformity of the plasma process without additional equipment.

The objects to be solved by the present invention are not limited to the above-mentioned problems, and the matters not mentioned above can be clearly understood by those skilled in the art from the present specification and the accompanying drawings .

A power supply apparatus according to an embodiment of the present invention includes: a high frequency power supply for providing a high frequency power; And a plasma source including a first antenna for generating plasma using the high frequency power, a second antenna, and a current phase adjusting unit connected between the first and second antennas, The phase difference between the first current applied to the first antenna and the second current applied to the second antenna may be adjusted to 0 ° or 180 °.

Wherein the current phase adjusting unit comprises: at least one variable element; And a controller for controlling the element value of the variable element to control the phase difference between the first current and the second current to be 0 ° or 180 °.

The variable element may include a variable reactance element.

A resonance element value that allows the impedance of the plasma source to be an LC resonance impedance may be included in the variable region of the element value.

The controller may adjust an element value of the variable element to be smaller or larger than the resonance element value based on the resonance element value.

The current phase adjustment unit includes first, second, and third impedance elements, one end of which is connected to the other, the other end of the first impedance element is connected to the first antenna, and the other end of the second impedance element is connected to the second antenna And the other end of the third impedance element is grounded, and at least one of the first, second, and third impedance elements may include a variable reactance element.

The variable reactance element may include at least one of a variable inductor and a variable capacitor.

A substrate processing apparatus according to an embodiment of the present invention includes: a chamber having a space for processing a substrate therein; A substrate support assembly located within the chamber and supporting the substrate; A gas supply unit for supplying gas into the chamber; And a power supply unit for supplying high-frequency power such that gas in the chamber is excited into a plasma state.

The power supply unit includes: a high frequency power supply for providing a high frequency power; And a plasma source including a first antenna for generating plasma using the high frequency power, a second antenna, and a current phase adjusting unit connected between the first and second antennas, The phase difference between the first current applied to the first antenna and the second current applied to the second antenna may be adjusted to 0 ° or 180 °.

Wherein the current phase adjusting unit comprises: at least one variable element; And a controller for controlling the element value of the variable element to control the phase difference between the first current and the second current to be 0 ° or 180 °.

The variable element may include a variable reactance element.

A resonance element value that allows the impedance of the plasma source to be an LC resonance impedance may be included in the variable region of the element value.

The controller may adjust an element value of the variable element to be smaller or larger than the resonance element value based on the resonance element value.

The apparatus of claim 8, wherein the current phase adjuster includes first, second, and third impedance elements, one end of the first impedance element being coupled to the first antenna, the other end of the first impedance element being connected to the first antenna, And the other end of the third impedance element is grounded, and at least one of the first, second, and third impedance elements may include a variable reactance element.

The variable reactance element may include at least one of a variable inductor and a variable capacitor.

The first antenna and the second antenna may be located on top of the chamber and the second antenna may be arranged to surround the first antenna when viewed from the top of the chamber.

According to one embodiment of the present invention, the distribution of the electric field and the plasma in the plasma process can be easily controlled.

In addition, according to one embodiment of the present invention, the uniformity of the plasma process can be easily improved without additional equipment.

The effects of the present invention are not limited to the above-described effects, and the effects not mentioned can be clearly understood by those skilled in the art from the present specification and the accompanying drawings.

1 is an exemplary diagram showing a substrate processing apparatus according to an embodiment of the present invention.
2 is a view illustrating a chamber to which currents having different phases are supplied by a power supply apparatus according to an embodiment of the present invention.
3 is an exemplary diagram illustrating a power supply unit according to an embodiment of the present invention.
FIG. 4 is a graph for explaining a phase difference of a current supplied to each antenna according to an embodiment of the present invention.
5A to 5C are views showing a configuration of a part of a power supply apparatus using a variable capacitor according to an embodiment of the present invention.
6A to 6C are views illustrating a configuration of a power supply apparatus using a variable inductor according to an embodiment of the present invention.

Other advantages and features of the present invention and methods of achieving them will become apparent with reference to the embodiments described below in detail with reference to the accompanying drawings. The present invention may, however, be embodied in many different forms and should not be construed as being limited to the embodiments set forth herein. Rather, these embodiments are provided so that this disclosure will be thorough and complete, and will fully convey the concept of the invention to those skilled in the art. Is provided to fully convey the scope of the invention to those skilled in the art, and the invention is only defined by the scope of the claims.

Unless defined otherwise, all terms (including technical or scientific terms) used herein have the same meaning as commonly accepted by the generic art in the prior art to which this invention belongs. Terms defined by generic dictionaries may be interpreted to have the same meaning as in the related art and / or in the text of this application, and may be conceptualized or overly formalized, even if not expressly defined herein I will not.

The terminology used herein is for the purpose of illustrating embodiments and is not intended to be limiting of the present invention. In the present specification, the singular form includes plural forms unless otherwise specified in the specification. As used herein, the terms' comprise 'and / or various forms of use of the verb include, for example,' including, '' including, '' including, '' including, Steps, operations, and / or elements do not preclude the presence or addition of one or more other compositions, components, components, steps, operations, and / or components. The term 'and / or' as used herein refers to each of the listed configurations or various combinations thereof.

1 is an exemplary diagram showing a substrate processing apparatus according to an embodiment of the present invention.

Referring to Fig. 1, a substrate processing apparatus 10 processes a substrate W using a plasma. For example, the substrate processing apparatus 10 may perform an etching process on the substrate W. [ The substrate processing apparatus 10 may include a chamber, a substrate support assembly 200, a showerhead 300, a gas supply unit 400, a baffle unit 500 and a power supply unit 600.

The chamber may provide a processing space in which a substrate processing process is performed. The chamber may be provided in a closed configuration with a processing space therein. The chamber may be provided with a metal material. The chamber may be provided with an aluminum material. The chamber may be grounded. An exhaust hole 102 may be formed in the bottom surface of the chamber. The exhaust hole 102 may be connected to the exhaust line 151. The reaction byproducts generated in the process and the gas staying in the inner space of the chamber can be discharged to the outside through the exhaust line 151. The inside of the chamber can be depressurized to a predetermined pressure by the evacuation process.

According to one example, a liner 130 may be provided within the chamber. The liner 130 may have a cylindrical shape with open top and bottom surfaces. The liner 130 may be provided to contact the inner surface of the chamber. The liner 130 protects the inner wall of the chamber to prevent the inner wall of the chamber from being damaged by the arc discharge. It is also possible to prevent the impurities generated during the substrate processing step from being deposited on the inner wall of the chamber. Optionally, the liner 130 may not be provided.

The substrate support assembly 200 may be located within the chamber. The substrate support assembly 200 can support the substrate W. [ The substrate support assembly 200 may include an electrostatic chuck 210 for attracting a substrate W using an electrostatic force. Alternatively, the substrate support assembly 200 may support the substrate W in a variety of ways, such as mechanical clamping. Hereinafter, the substrate support assembly 200 including the electrostatic chuck 210 will be described.

The substrate support assembly 200 may include an electrostatic chuck 210, a bottom cover 250 and a plate 270. The substrate support assembly 200 may be spaced upwardly from the bottom surface of the chamber within the chamber.

The electrostatic chuck 210 may include a dielectric plate 220, a body 230, and a focus ring 240. The electrostatic chuck 210 can support the substrate W. [ The dielectric plate 220 may be positioned at the top of the electrostatic chuck 210. The dielectric plate 220 may be provided as a disk-shaped dielectric substance. The substrate W may be placed on the upper surface of the dielectric plate 220. The upper surface of the dielectric plate 220 may have a smaller radius than the substrate W. [ Therefore, the edge region of the substrate W may be located outside the dielectric plate 220.

The dielectric plate 220 may include a first electrode 223, a heater 225, and a first supply path 221 therein. The first supply passage 221 may be provided from the upper surface to the lower surface of the dielectric plate 210. A plurality of first supply passages 221 may be spaced apart from each other and may be provided as a passage through which the heat transfer medium is supplied to the bottom surface of the substrate W.

The first electrode 223 may be electrically connected to the first power source 223a. The first power source 223a may include a DC power source. A switch 223b may be provided between the first electrode 223 and the first power source 223a. The first electrode 223 may be electrically connected to the first power source 223a by turning on / off the switch 223b. When the switch 223b is turned on, a direct current can be applied to the first electrode 223. An electrostatic force acts between the first electrode 223 and the substrate W by the current applied to the first electrode 223 and the substrate W can be attracted to the dielectric plate 220 by the electrostatic force.

The heater 225 may be positioned below the first electrode 223. The heater 225 may be electrically connected to the second power source 225a. The heater 225 can generate heat by resisting the current applied from the second power source 225a. The generated heat can be transferred to the substrate W through the dielectric plate 220. The substrate W can be maintained at a predetermined temperature by the heat generated in the heater 225. The heater 225 may include a helical coil.

The body 230 may be positioned below the dielectric plate 220. The bottom surface of the dielectric plate 220 and the top surface of the body 230 may be adhered by an adhesive 236. The body 230 may be made of aluminum. The upper surface of the body 230 may be positioned such that the central region is located higher than the edge region. The top center region of the body 230 has an area corresponding to the bottom surface of the dielectric plate 220 and can be adhered to the bottom surface of the dielectric plate 220. The body 230 may have a first circulation channel 231, a second circulation channel 232, and a second supply channel 233 formed therein.

The first circulation channel 231 may be provided as a passage through which the heat transfer medium circulates. The first circulation flow path 231 may be formed in a spiral shape inside the body 230. Alternatively, the first circulation flow path 231 may be arranged so that the ring-shaped flow paths having different radii have the same center. Each of the first circulation flow paths 231 can communicate with each other. The first circulation flow paths 231 may be formed at the same height.

The second circulation flow passage 232 may be provided as a passage through which the cooling fluid circulates. The second circulation flow path 232 may be formed in a spiral shape inside the body 230. Alternatively, the second circulation flow path 232 may be arranged so that the ring-shaped flow paths having different radii have the same center. And each of the second circulation flow paths 232 can communicate with each other. The second circulation channel 232 may have a larger cross-sectional area than the first circulation channel 231. The second circulation flow paths 232 may be formed at the same height. The second circulation flow passage 232 may be positioned below the first circulation flow passage 231.

The second supply passage 233 extends upward from the first circulation passage 231 and may be provided on the upper surface of the body 230. The second supply passage 243 is provided in a number corresponding to the first supply passage 221 and can connect the first circulation passage 231 and the first supply passage 221.

The first circulation channel 231 may be connected to the heat transfer medium storage unit 231a through the heat transfer medium supply line 231b. The heat transfer medium storage unit 231a may store the heat transfer medium. The heat transfer medium may include an inert gas. According to one embodiment, the heat transfer medium may comprise helium (He) gas. The helium gas may be supplied to the first circulation channel 231 through the supply line 231b and may be supplied to the bottom surface of the substrate W sequentially through the second supply channel 233 and the first supply channel 221 . The helium gas may act as a medium through which heat transferred from the plasma to the substrate W is transferred to the electrostatic chuck 210.

The second circulation channel 232 may be connected to the cooling fluid storage 232a through the cooling fluid supply line 232c. The cooling fluid may be stored in the cooling fluid storage portion 232a. A cooler 232b may be provided in the cooling fluid storage portion 232a. The cooler 232b may cool the cooling fluid to a predetermined temperature. Alternatively, the cooler 232b may be installed on the cooling fluid supply line 232c. The cooling fluid supplied to the second circulation channel 232 through the cooling fluid supply line 232c circulates along the second circulation channel 232 and can cool the body 230. [ The body 230 is cooled and the dielectric plate 220 and the substrate W are cooled together to maintain the substrate W at a predetermined temperature.

The body 230 may include a metal plate. According to one example, the entire body 230 may be provided as a metal plate.

The focus ring 240 may be disposed at the edge region of the electrostatic chuck 210. The focus ring 240 has a ring shape and may be disposed along the periphery of the dielectric plate 220. The upper surface of the focus ring 240 may be positioned such that the outer portion 240a is higher than the inner portion 240b. The upper surface inner side portion 240b of the focus ring 240 may be positioned at the same height as the upper surface of the dielectric plate 220. [ The upper surface inner side portion 240b of the focus ring 240 can support the edge region of the substrate W positioned outside the dielectric plate 220. [ The outer side portion 240a of the focus ring 240 may be provided so as to surround the edge region of the substrate W. [ The focus ring 240 can control the electromagnetic field so that the density of the plasma is evenly distributed over the entire area of the substrate W. [ Thereby, plasma is uniformly formed over the entire region of the substrate W, so that each region of the substrate W can be uniformly etched.

The lower cover 250 may be located at the lower end of the substrate support assembly 200. The lower cover 250 may be spaced upwardly from the bottom surface of the chamber. The lower cover 250 may have a space 255 in which the upper surface thereof is opened. The outer radius of the lower cover 250 may be provided with a length equal to the outer radius of the body 230. A lift pin module (not shown) for moving the substrate W to be transferred from an external carrying member to the electrostatic chuck 210 may be positioned in the inner space 255 of the lower cover 250. The lift pin module (not shown) may be spaced apart from the lower cover 250 by a predetermined distance. The bottom surface of the lower cover 250 may be made of a metal material. The inner space 255 of the lower cover 250 may be provided with air. Air may have a lower dielectric constant than the insulator and may serve to reduce the electromagnetic field inside the substrate support assembly 200.

The lower cover 250 may have a connecting member 253. The connecting member 253 can connect the outer surface of the lower cover 250 and the inner wall of the chamber. A plurality of connecting members 253 may be provided on the outer surface of the lower cover 250 at regular intervals. The connecting member 253 can support the substrate support assembly 200 inside the chamber. Also, the connection member 253 may be connected to the inner wall of the chamber so that the lower cover 250 is electrically grounded. A first power supply line 223c connected to the first power supply 223a, a second power supply line 225c connected to the second power supply 225a, a heat transfer medium supply line 231b connected to the heat transfer medium storage 231a, And the cooling fluid supply line 232c connected to the cooling fluid reservoir 232a may extend into the lower cover 250 through the inner space 255 of the connection member 253. [

A plate 270 may be positioned between the electrostatic chuck 210 and the lower cover 250. The plate 270 may cover the upper surface of the lower cover 250. The plate 270 may be provided with a cross-sectional area corresponding to the body 230. The plate 270 may comprise an insulator. According to one example, one or a plurality of plates 270 may be provided. The plate 270 may serve to increase the electrical distance between the body 230 and the lower cover 250.

The showerhead 300 may be located at the top of the substrate support assembly 200 within the chamber. The showerhead 300 may be positioned opposite the substrate support assembly 200.

The showerhead 300 may include a gas distributor 310 and a support 330. The gas distribution plate 310 may be spaced apart from the upper surface of the chamber by a predetermined distance. A certain space may be formed between the gas distribution plate 310 and the upper surface of the chamber. The gas distribution plate 310 may be provided in a plate shape having a constant thickness. The bottom surface of the gas distribution plate 310 may be polarized on its surface to prevent arcing by plasma. The cross-section of the gas distribution plate 310 may be provided to have the same shape and cross-sectional area as the substrate support assembly 200. The gas distribution plate 310 may include a plurality of ejection holes 311. The injection hole 311 can penetrate the upper and lower surfaces of the gas distribution plate 310 in the vertical direction. The gas distribution plate 310 may include a metal material.

The support portion 330 can support the side of the gas distributor plate 310. The upper end of the support part 330 may be connected to the upper surface of the chamber, and the lower end may be connected to the side of the gas distribution plate 310. The support portion 330 may include a non-metallic material.

The gas supply unit 400 can supply the process gas into the chamber. The gas supply unit 400 may include a gas supply nozzle 410, a gas supply line 420, and a gas storage unit 430. The gas supply nozzle 410 may be installed at the center of the upper surface of the chamber. A jetting port may be formed on the bottom surface of the gas supply nozzle 410. The injection port can supply the process gas into the chamber. The gas supply line 420 may connect the gas supply nozzle 410 and the gas storage unit 430. The gas supply line 420 may supply the process gas stored in the gas storage unit 430 to the gas supply nozzle 410. A valve 421 may be installed in the gas supply line 420. The valve 421 opens and closes the gas supply line 420 and can control the flow rate of the process gas supplied through the gas supply line 420.

The baffle unit 500 may be positioned between the inner wall of the chamber and the substrate support assembly 200. The baffle 510 may be provided in an annular ring shape. A plurality of through holes 511 may be formed in the baffle 510. The process gas provided in the chamber may be exhausted to the exhaust hole 102 through the through holes 511 of the baffle 510. [ The flow of the process gas can be controlled according to the shape of the baffle 510 and the shape of the through holes 511. [

The power supply unit 600 may supply high frequency power to excite the process gas in the chamber to a plasma state. According to an embodiment of the present invention, the power supply unit 600 may be configured as an inductively coupled plasma (ICP) type. 1, the power supply unit 600 includes a high frequency power source 610 for supplying high frequency power, and plasma sources 621 and 622 for receiving high frequency power electrically connected to the high frequency power source can do. The plasma source may include a first antenna 621 and a second antenna 622. The antennas 621 and 622 may be provided in a spirally wound coil.

The first antenna 621 and the second antenna 622 may be disposed at positions opposite to the substrate W. [ For example, the first antenna 621 and the second antenna 622 may be installed on top of the chamber. The diameter of the first antenna 621 may be smaller than the diameter of the second antenna 622 and may be located inside the upper portion of the chamber and the second antenna 622 may be located outside the upper portion of the chamber. The first antenna 621 and the second antenna 622 can receive a high frequency power from the high frequency power source 610 to induce a time varying magnetic field in the chamber so that the process gas supplied to the chamber can be excited with plasma .

Hereinafter, a process of processing a substrate using the above-described substrate processing apparatus will be described.

When the substrate W is placed on the substrate support assembly 200, a direct current may be applied from the first power source 223a to the first electrode 223. An electrostatic force is applied between the first electrode 223 and the substrate W by the DC current applied to the first electrode 223 and the substrate W can be attracted to the electrostatic chuck 210 by the electrostatic force.

When the substrate W is attracted to the electrostatic chuck 210, the process gas can be supplied into the chamber through the gas supply nozzle 410. The process gas can be uniformly injected into the interior region of the chamber through the injection hole 311 of the showerhead 300. [ The high frequency power generated from the high frequency power source can be applied to the plasma source, thereby generating an electromagnetic force in the chamber. The electromagnetic force may excite the plasma of the process gas between the substrate support assembly 200 and the showerhead 300. The plasma may be provided to the substrate W to process the substrate W. [ The plasma may be subjected to an etching process.

Referring to FIG. 2, currents having different phases are supplied to the chamber by the power supply unit 600 according to an embodiment of the present invention. For example, a current I in having a phase of? 1 may be supplied to the first antenna 621, and a current I out having a phase of? 2 may be supplied to the second antenna 622. The power supply unit 600 according to an embodiment of the present invention adjusts the phase difference ?? =? 2 - ? 1 of the current flowing through the first antenna 621 and the second antenna 622, Can be controlled.

3 is a diagram for explaining a configuration of a power supply unit 600 used in the substrate processing apparatus 10 according to an embodiment of the present invention.

Referring to FIG. 3, the power supply unit 600 may include a high frequency power source 610, and a plasma source. As shown in FIG. 3, the plasma source may include a first antenna 621, a second antenna 622, and a current phase adjuster 623.

The high-frequency power source 610 may generate high-frequency power and provide the high-frequency power to a plasma source provided in the chamber. The high frequency power source 610 may transmit high frequency power through an RF signal. According to an embodiment of the present invention, the RF power source 610 may generate a sinusoidal RF signal and provide it as a plasma source, but the RF signal is not limited thereto and may include various waveforms such as sawtooth, triangle, Lt; / RTI >

The plasma source can generate plasma from the gas supplied to the chamber using high frequency power. 1 to 3, the plasma source may include a plurality of antennas 621 and 622, and a plurality of antennas may be connected in parallel. In one embodiment, the antenna may comprise a coil. As described with reference to FIG. 1, at least one of the antennas may be a coil that induces a magnetic field using high-frequency power. According to one embodiment, the antenna may be installed at the top of the chamber.

The diameter of the first antenna 621 may be smaller than the diameter of the second antenna 622. As a result, the first antenna 621 may be disposed inside the second antenna 622. Because of this difference in diameter, the inductance L1 of the first antenna 621 may be smaller than the inductance L2 of the second antenna 622. [

The current phase adjustment unit 623 is connected between the first antenna 621 and the second antenna 622 and includes a first current supplied to the first antenna 621 and a second current supplied to the second antenna 622 The phase difference of the supplied second current can be adjusted. The current phase adjustment unit 623 can adjust the phase difference between the first current and the second current to be 0 ° or 180 °, that is, the first current and the second current to be in-phase or reverse-phase.

3, the current phase adjuster 623 may include one or more variable elements, and a controller 624. [ The controller 624 may control the element value of the variable element so that the phase difference between the first current and the second current becomes 0 ° or 180 °. Referring to FIG. 3, the power supply unit 600 may further include an impedance matching unit. The impedance matching unit converts the impedance of the first antenna 621 and the second antenna 621

The variable element may include a variable reactance element. According to one embodiment, the variable reactance element of the current phase adjuster 623 may include a resonant element value such that the impedance of the plasma source becomes the LC resonant impedance in the variable region of the element value. The impedance of the plasma source may be the impedance measured at the stage A shown in Fig. Hereinafter, a method of controlling the current flowing in each antenna to either in-phase or reverse-phase according to an embodiment of the present invention will be described with reference to the graph of FIG.

FIG. 4 is a graph for explaining a phase difference of a current supplied to each antenna according to an embodiment of the present invention. The X-axis represents the element value of the variable reactance element, and the Y-axis represents the current ratio between the first current and the second current.

As described above, the variable reactance element can include the resonant element value in the variable region of the element value. The controller 624 can adjust the element value of the variable reactance element to be smaller or larger than the element value. The circuit including the variable reactance element may be an inductive circuit or a conductive circuit based on the value of the resonant element.

In one embodiment, the variable reactance element value is an inductive circuit when the value is smaller than the resonant element value, and may be a capacitive circuit when the value is larger than the resonant element value. In another embodiment, it may be a capacitive circuit when the variable reactance element value is smaller than the resonant element value, or an inductive circuit when the variable reactance element value is larger than the resonant element value.

Therefore, the current phase adjuster can select either the first current or the second current as the in-phase or the reverse-phase by adjusting the element value of the variable reactance element to be smaller or larger than the resonant element value. Selecting the current flowing in the plurality of antennas in the in-phase or the reverse-phase in this way can easily control the change of the electric field due to the phase difference of the current. Further, adjusting the current in the in-phase or the reverse phase in this manner makes it possible to easily control the plasma process and improve the uniformity of the plasma etching process.

5A to 5C are views showing a configuration of a part of a power supply apparatus using a variable capacitor according to an embodiment of the present invention. 6A to 6C are views illustrating a configuration of a power supply apparatus using a variable inductor according to an embodiment of the present invention.

The current phase adjuster 623 may include a circuit that can adjust the first current and the second current to be applied in the same phase or opposite phase. In some embodiments, the circuit may be of the type shown in Figures 5A-6C, but is not limited thereto.

As shown in Figs. 5A to 6C, the circuit may include first, second, and third impedance elements, one end of which is connected to another. The other end of the first impedance element may be connected to the first antenna, the other end of the second impedance element may be connected to the second antenna, and the other end of the third impedance element may be grounded. At least one of the first to third impedance elements may be a variable reactance element. 5A to 5C, the variable reactance element may be a variable capacitor. As shown in Figs. 6A to 6C, the variable reactance element may be a variable inductor.

The current phase adjuster included in the power supply unit 600 according to the present invention may include one variable reactance element as shown in FIGS. 5A to 6C, but is not limited thereto and may include two or more variable reactance elements . In addition, the current phase adjustment section may include a variable inductor and a variable capacitor at the same time.

As a result, the current phase adjuster as described above can control the phases of the currents flowing through the plurality of antennas. In addition, the power supply unit according to an embodiment of the present invention can easily perform the plasma process by controlling the currents flowing through the two or more antennas to be in the same phase or in opposite phases.

10: substrate processing apparatus
600: Power supply
610: High frequency power source
620: Plasma source
621: First antenna
622: Second antenna
623: current phase adjustment section
624:

Claims (15)

A high frequency power supply for providing a high frequency power; And
And a plasma source including a first antenna for generating a plasma using the high frequency power, a second antenna, and a current phase adjusting unit connected between the first and second antennas,
Wherein the current phase adjusting unit adjusts a phase difference between a first current applied to the first antenna and a second current applied to the second antenna to be 0 ° or 180 °,
A first, a second, and a third impedance element,
The other end of the first impedance element is connected to the first antenna, the other end of the second impedance element is connected to the second antenna, the other end of the third impedance element is grounded,
Wherein at least one of the first, second and third impedance elements is a variable inductor.
delete delete The method according to claim 1,
Wherein a resonant element value is included in a variable region of an element value of the variable inductor so that an impedance of the plasma source becomes an LC resonant impedance.
5. The method of claim 4,
Wherein the current phase adjuster comprises:
And adjusts the element value of the variable inductor to be smaller or larger than the resonance element value based on the resonance element value.
delete delete A chamber having a space for processing the substrate therein;
A substrate support assembly located within the chamber and supporting the substrate;
A gas supply unit for supplying gas into the chamber; And
And a power supply unit for supplying high-frequency power such that gas in the chamber is excited into a plasma state, the power supply unit comprising:
A high frequency power supply for providing a high frequency power; And
And a plasma source including a first antenna for generating a plasma using the high frequency power, a second antenna, and a current phase adjusting unit connected between the first and second antennas,
Wherein the current phase adjusting unit adjusts a phase difference between a first current applied to the first antenna and a second current applied to the second antenna to be 0 ° or 180 °,
A first, a second, and a third impedance element,
The other end of the first impedance element is connected to the first antenna, the other end of the second impedance element is connected to the second antenna, the other end of the third impedance element is grounded,
Wherein at least one of the first, second, and third impedance elements is a variable inductor.
delete delete 9. The method of claim 8,
Wherein a resonant element value is included in a variable region of an element value of the variable inductor so that an impedance of the plasma source becomes an LC resonant impedance.
12. The method of claim 11,
Wherein the current phase adjuster comprises:
And adjusts the element value of the variable inductor to be smaller or larger than the resonance element value based on the resonance element value.
delete delete 9. The method of claim 8,
Wherein the first antenna and the second antenna are located on top of the chamber,
Wherein the second antenna is disposed to surround the first antenna when viewed from the top of the chamber.
KR1020150151079A 2015-10-29 2015-10-29 Apparatus for supplying power, and apparatus for treating substrate employing the same KR101778972B1 (en)

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KR102630343B1 (en) * 2017-08-03 2024-01-30 삼성전자주식회사 plasma processing apparatus and method for manufacturing semiconductor device using the same
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KR102295727B1 (en) * 2019-09-05 2021-08-31 한양대학교 산학협력단 Substrate treating apparatus
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