KR101911196B1 - 화학적 증기 증착 코팅, 물품, 및 방법 - Google Patents

화학적 증기 증착 코팅, 물품, 및 방법 Download PDF

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KR101911196B1
KR101911196B1 KR1020177023140A KR20177023140A KR101911196B1 KR 101911196 B1 KR101911196 B1 KR 101911196B1 KR 1020177023140 A KR1020177023140 A KR 1020177023140A KR 20177023140 A KR20177023140 A KR 20177023140A KR 101911196 B1 KR101911196 B1 KR 101911196B1
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vapor deposition
layer
article
substrate
dimethylsilane
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KR20170100041A (ko
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데이비드 에이. 스미스
제임스 비. 마트젤라
폴 에이치. 실비스
게리 에이. 바로네
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실코텍 코포레이션
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    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/32Carbides
    • C23C16/325Silicon carbide
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B05SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05DPROCESSES FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05D1/00Processes for applying liquids or other fluent materials
    • B05D1/60Deposition of organic layers from vapour phase
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/56After-treatment
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C8/00Solid state diffusion of only non-metal elements into metallic material surfaces; Chemical surface treatment of metallic material by reaction of the surface with a reactive gas, leaving reaction products of surface material in the coating, e.g. conversion coatings, passivation of metals
    • C23C8/06Solid state diffusion of only non-metal elements into metallic material surfaces; Chemical surface treatment of metallic material by reaction of the surface with a reactive gas, leaving reaction products of surface material in the coating, e.g. conversion coatings, passivation of metals using gases
    • C23C8/08Solid state diffusion of only non-metal elements into metallic material surfaces; Chemical surface treatment of metallic material by reaction of the surface with a reactive gas, leaving reaction products of surface material in the coating, e.g. conversion coatings, passivation of metals using gases only one element being applied
    • C23C8/10Oxidising
    • H01L21/205
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/24Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using chemical vapour deposition [CVD]
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B05SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05DPROCESSES FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05D2202/00Metallic substrate
    • B05D2202/10Metallic substrate based on Fe
    • B05D2202/15Stainless steel
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10TTECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00Stock material or miscellaneous articles
    • Y10T428/24Structurally defined web or sheet [e.g., overall dimension, etc.]
    • Y10T428/24802Discontinuous or differential coating, impregnation or bond [e.g., artwork, printing, retouched photograph, etc.]

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  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)
KR1020177023140A 2009-10-27 2010-10-26 화학적 증기 증착 코팅, 물품, 및 방법 Active KR101911196B1 (ko)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US25523709P 2009-10-27 2009-10-27
US61/255,237 2009-10-27
US26722809P 2009-12-07 2009-12-07
US61/267,228 2009-12-07
PCT/US2010/054058 WO2011056550A1 (en) 2009-10-27 2010-10-26 Chemical vapor deposition coating, article, and method

Related Parent Applications (1)

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KR1020127010812A Division KR101773213B1 (ko) 2009-10-27 2010-10-26 화학적 증기 증착 코팅, 물품, 및 방법

Related Child Applications (1)

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KR1020187029570A Division KR101932899B1 (ko) 2009-10-27 2010-10-26 화학적 증기 증착 코팅, 물품, 및 방법

Publications (2)

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KR20170100041A KR20170100041A (ko) 2017-09-01
KR101911196B1 true KR101911196B1 (ko) 2018-10-24

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KR1020127010812A Active KR101773213B1 (ko) 2009-10-27 2010-10-26 화학적 증기 증착 코팅, 물품, 및 방법
KR1020187029570A Active KR101932899B1 (ko) 2009-10-27 2010-10-26 화학적 증기 증착 코팅, 물품, 및 방법

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KR1020187029570A Active KR101932899B1 (ko) 2009-10-27 2010-10-26 화학적 증기 증착 코팅, 물품, 및 방법

Country Status (7)

Country Link
US (2) US9777368B2 (https=)
EP (1) EP2494087B1 (https=)
JP (1) JP5735522B2 (https=)
KR (3) KR101911196B1 (https=)
CN (2) CN106319477A (https=)
ES (1) ES2859458T3 (https=)
WO (1) WO2011056550A1 (https=)

Families Citing this family (45)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5735522B2 (ja) 2009-10-27 2015-06-17 シルコテック コーポレイション 化学気相成長コーティング、物品、及び方法
US9340880B2 (en) 2009-10-27 2016-05-17 Silcotek Corp. Semiconductor fabrication process
WO2012047945A2 (en) 2010-10-05 2012-04-12 Silcotek Corp. Wear resistant coating, article, and method
TW201319299A (zh) * 2011-09-13 2013-05-16 應用材料股份有限公司 用於低溫電漿輔助沉積的活化矽前驅物
KR102018241B1 (ko) * 2012-03-26 2019-09-04 실코텍 코포레이션 코팅된 물품 및 화학적 기상증착방법
US9975143B2 (en) 2013-05-14 2018-05-22 Silcotek Corp. Chemical vapor deposition functionalization
US20150030885A1 (en) * 2013-07-29 2015-01-29 Silcotek Corp. Coated article and chemical vapor deposition process
US11292924B2 (en) 2014-04-08 2022-04-05 Silcotek Corp. Thermal chemical vapor deposition coated article and process
SG10201506024WA (en) * 2014-08-21 2016-03-30 Silcotek Corp Semiconductor fabrication process
SG10201506694QA (en) * 2014-09-03 2016-04-28 Silcotek Corp Chemical vapor deposition process and coated article
US9915001B2 (en) * 2014-09-03 2018-03-13 Silcotek Corp. Chemical vapor deposition process and coated article
US10316408B2 (en) * 2014-12-12 2019-06-11 Silcotek Corp. Delivery device, manufacturing system and process of manufacturing
US10054717B2 (en) 2015-04-03 2018-08-21 Moxtek, Inc. Oxidation and moisture barrier layers for wire grid polarizer
US10534120B2 (en) 2015-04-03 2020-01-14 Moxtek, Inc. Wire grid polarizer with protected wires
US9995864B2 (en) 2015-04-03 2018-06-12 Moxtek, Inc. Wire grid polarizer with silane protective coating
US9703028B2 (en) 2015-04-03 2017-07-11 Moxtek, Inc. Wire grid polarizer with phosphonate protective coating
US10876206B2 (en) 2015-09-01 2020-12-29 Silcotek Corp. Thermal chemical vapor deposition coating
CN105112886B (zh) * 2015-09-18 2018-04-17 杭州天净检测技术有限公司 一种惰性表面处理技术
US10029346B2 (en) * 2015-10-16 2018-07-24 Applied Materials, Inc. External clamp ring for a chemical mechanical polishing carrier head
GB201520964D0 (en) 2015-11-27 2016-01-13 Porvair Filtration Group Ltd Filtration material and method of manufacture thereof
US10323321B1 (en) 2016-01-08 2019-06-18 Silcotek Corp. Thermal chemical vapor deposition process and coated article
US20170211180A1 (en) * 2016-01-22 2017-07-27 Silcotek Corp. Diffusion-rate-limited thermal chemical vapor deposition coating
US10487403B2 (en) * 2016-12-13 2019-11-26 Silcotek Corp Fluoro-containing thermal chemical vapor deposition process and article
US11161324B2 (en) 2017-09-13 2021-11-02 Silcotek Corp. Corrosion-resistant coated article and thermal chemical vapor deposition coating process
US12181452B2 (en) 2017-09-18 2024-12-31 Waters Technologies Corporation Use of vapor deposition coated flow paths for improved chromatography of metal interacting analytes
US11709156B2 (en) 2017-09-18 2023-07-25 Waters Technologies Corporation Use of vapor deposition coated flow paths for improved analytical analysis
US12180581B2 (en) 2017-09-18 2024-12-31 Waters Technologies Corporation Use of vapor deposition coated flow paths for improved chromatography of metal interacting analytes
US11709155B2 (en) 2017-09-18 2023-07-25 Waters Technologies Corporation Use of vapor deposition coated flow paths for improved chromatography of metal interacting analytes
JP2019108569A (ja) * 2017-12-15 2019-07-04 シルコテック コーポレーション フッ素含有熱化学気相堆積方法および物品
CN109957788A (zh) * 2017-12-22 2019-07-02 西尔科特克公司 含氟热化学气相沉积方法和制品
KR102207529B1 (ko) 2018-03-14 2021-01-26 주식회사 엘지화학 비정질 실리콘-탄소 복합체, 이의 제조방법 및 이를 포함하는 리튬 이차전지
CN112203778B (zh) * 2018-06-22 2022-08-30 林德有限责任公司 气缸阀以及用于抑制污染物在气缸和气缸阀中形成的方法
KR102742249B1 (ko) * 2018-11-29 2024-12-16 실코텍 코포레이션 유체 접촉 방법, 코팅 물품 및 코팅 방법
EP3930867B1 (en) 2019-02-27 2025-11-12 Waters Technologies Corporation Chromatographic seal and coated flow paths for minimizing analyte adsorption
WO2020252306A1 (en) 2019-06-14 2020-12-17 Silcotek Corp. Nano-wire growth
WO2021072040A1 (en) * 2019-10-10 2021-04-15 Lam Research Corporation Inorganic coating of plasma chamber component
US11918936B2 (en) 2020-01-17 2024-03-05 Waters Technologies Corporation Performance and dynamic range for oligonucleotide bioanalysis through reduction of non specific binding
CN113707526B (zh) * 2020-05-20 2024-05-24 中微半导体设备(上海)股份有限公司 零部件、形成耐等离子体涂层的方法和等离子体反应装置
US12473635B2 (en) 2020-06-03 2025-11-18 Silcotek Corp. Dielectric article
WO2022026070A1 (en) 2020-07-30 2022-02-03 Silcotek Corp. Heat exchanger process
US12352734B2 (en) 2020-09-24 2025-07-08 Waters Technologies Corporation Chromatographic hardware improvements for separation of reactive molecules
CN116060274B (zh) * 2021-10-29 2023-12-19 佛山市思博睿科技有限公司 等离子化学气相沉积自修复疏水纳米膜的制备方法
CN114950900A (zh) * 2022-04-22 2022-08-30 上海酷聚科技有限公司 一种有机膜层的制备方法、有机膜层结构及沉积设备
US20230360906A1 (en) * 2022-05-05 2023-11-09 Applied Materials, Inc. Silicon-and-carbon-containing materials with low dielectric constants
CN115125512A (zh) * 2022-07-11 2022-09-30 杭州师范大学 利用四甲基二硅氧烷热分解沉积技术的基材表面惰性处理方法

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2009032488A1 (en) * 2007-08-28 2009-03-12 International Business Machines Corporation Improved low k porous sicoh dielectric and integration with post film formation treatment

Family Cites Families (36)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2371524A1 (fr) 1976-11-18 1978-06-16 Alsthom Atlantique Procede de depot d'une couche mince par decomposition d'un gaz dans un plasma
US4579752A (en) 1984-10-29 1986-04-01 At&T Bell Laboratories Enhanced corrosion resistance of metal surfaces
US4671997A (en) 1985-04-08 1987-06-09 United Technologies Corporation Gas turbine composite parts
US4714632A (en) 1985-12-11 1987-12-22 Air Products And Chemicals, Inc. Method of producing silicon diffusion coatings on metal articles
US4792460A (en) 1986-07-15 1988-12-20 Electric Power Research Institute, Inc. Method for production of polysilanes and polygermanes, and deposition of hydrogenated amorphous silicon, alloys thereof, or hydrogenated amorphous germanium
US4741964A (en) 1986-07-17 1988-05-03 International Business Machines Corporation Structure containing hydrogenated amorphous silicon and process
US4749631B1 (en) 1986-12-04 1993-03-23 Multilayer ceramics from silicate esters
US4753856A (en) 1987-01-02 1988-06-28 Dow Corning Corporation Multilayer ceramic coatings from silicate esters and metal oxides
US4842888A (en) 1988-04-07 1989-06-27 Dow Corning Corporation Ceramic coatings from the pyrolysis in ammonia of mixtures of silicate esters and other metal oxide precursors
US5160544A (en) 1990-03-20 1992-11-03 Diamonex Incorporated Hot filament chemical vapor deposition reactor
US5052339A (en) * 1990-10-16 1991-10-01 Air Products And Chemicals, Inc. Radio frequency plasma enhanced chemical vapor deposition process and reactor
FR2675947A1 (fr) 1991-04-23 1992-10-30 France Telecom Procede de passivation locale d'un substrat par une couche de carbone amorphe hydrogene et procede de fabrication de transistors en couches minces sur ce substrat passive.
TW203633B (https=) 1991-06-03 1993-04-11 L Air Liquide Sa Pour L Expl Des Proce
CA2104340A1 (en) 1992-08-31 1994-03-01 Grish Chandra Hermetic protection for integrated circuits
US5825078A (en) 1992-09-23 1998-10-20 Dow Corning Corporation Hermetic protection for integrated circuits
US5299731A (en) 1993-02-22 1994-04-05 L'air Liquide Corrosion resistant welding of stainless steel
TW347149U (en) 1993-02-26 1998-12-01 Dow Corning Integrated circuits protected from the environment by ceramic and barrier metal layers
JPH0714780A (ja) * 1993-06-24 1995-01-17 Hitachi Ltd 珪素薄膜の成膜方法
EP0653501B1 (en) 1993-11-11 1998-02-04 Nissin Electric Company, Limited Plasma-CVD method and apparatus
US5818071A (en) 1995-02-02 1998-10-06 Dow Corning Corporation Silicon carbide metal diffusion barrier layer
US5780163A (en) * 1996-06-05 1998-07-14 Dow Corning Corporation Multilayer coating for microelectronic devices
US6511760B1 (en) 1998-02-27 2003-01-28 Restek Corporation Method of passivating a gas vessel or component of a gas transfer system using a silicon overlay coating
US6159871A (en) 1998-05-29 2000-12-12 Dow Corning Corporation Method for producing hydrogenated silicon oxycarbide films having low dielectric constant
US6444326B1 (en) * 1999-03-05 2002-09-03 Restek Corporation Surface modification of solid supports through the thermal decomposition and functionalization of silanes
US6472076B1 (en) * 1999-10-18 2002-10-29 Honeywell International Inc. Deposition of organosilsesquioxane films
US6531398B1 (en) * 2000-10-30 2003-03-11 Applied Materials, Inc. Method of depositing organosillicate layers
US7070833B2 (en) 2003-03-05 2006-07-04 Restek Corporation Method for chemical vapor deposition of silicon on to substrates for use in corrosive and vacuum environments
US7258752B2 (en) * 2003-03-26 2007-08-21 Ut-Battelle Llc Wrought stainless steel compositions having engineered microstructures for improved heat resistance
US7867627B2 (en) 2004-12-13 2011-01-11 Silcotek Corporation Process for the modification of substrate surfaces through the deposition of amorphous silicon layers followed by surface functionalization with organic molecules and functionalized structures
US7678712B2 (en) * 2005-03-22 2010-03-16 Honeywell International, Inc. Vapor phase treatment of dielectric materials
US7902080B2 (en) * 2006-05-30 2011-03-08 Applied Materials, Inc. Deposition-plasma cure cycle process to enhance film quality of silicon dioxide
JP5735522B2 (ja) 2009-10-27 2015-06-17 シルコテック コーポレイション 化学気相成長コーティング、物品、及び方法
WO2012047945A2 (en) 2010-10-05 2012-04-12 Silcotek Corp. Wear resistant coating, article, and method
KR102018241B1 (ko) 2012-03-26 2019-09-04 실코텍 코포레이션 코팅된 물품 및 화학적 기상증착방법
US20150030885A1 (en) 2013-07-29 2015-01-29 Silcotek Corp. Coated article and chemical vapor deposition process
US11292924B2 (en) 2014-04-08 2022-04-05 Silcotek Corp. Thermal chemical vapor deposition coated article and process

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2009032488A1 (en) * 2007-08-28 2009-03-12 International Business Machines Corporation Improved low k porous sicoh dielectric and integration with post film formation treatment

Non-Patent Citations (2)

* Cited by examiner, † Cited by third party
Title
A.V. Vasin 등, 'Light-emitting properties of amorphous Si:C:O:H layers fabricated by oxidation of carbon-rich a-Si:C:H films', Solid State Sciences 11 (2009) 1833-1837. 1부.*
Masanori Shinohara, 'Infrared study of carbon incorporation during chemical vapor deposition of SiC using methylsilanes', Applied Surface Science 175-176(2001). 1부.*

Also Published As

Publication number Publication date
EP2494087B1 (en) 2020-12-30
ES2859458T3 (es) 2021-10-04
CN102741452A (zh) 2012-10-17
WO2011056550A1 (en) 2011-05-12
US9777368B2 (en) 2017-10-03
KR20170100041A (ko) 2017-09-01
US10731247B2 (en) 2020-08-04
US20190032201A1 (en) 2019-01-31
JP5735522B2 (ja) 2015-06-17
US20120251797A1 (en) 2012-10-04
KR20120120120A (ko) 2012-11-01
KR101773213B1 (ko) 2017-08-30
EP2494087A1 (en) 2012-09-05
KR20180115356A (ko) 2018-10-22
KR101932899B1 (ko) 2018-12-26
CN106319477A (zh) 2017-01-11
JP2013508563A (ja) 2013-03-07

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