KR101907246B1 - Chuck structure for supporting a wafer - Google Patents

Chuck structure for supporting a wafer Download PDF

Info

Publication number
KR101907246B1
KR101907246B1 KR1020150073833A KR20150073833A KR101907246B1 KR 101907246 B1 KR101907246 B1 KR 101907246B1 KR 1020150073833 A KR1020150073833 A KR 1020150073833A KR 20150073833 A KR20150073833 A KR 20150073833A KR 101907246 B1 KR101907246 B1 KR 101907246B1
Authority
KR
South Korea
Prior art keywords
chuck structure
heater
wafer
refrigerant
chuck
Prior art date
Application number
KR1020150073833A
Other languages
Korean (ko)
Other versions
KR20160139259A (en
Inventor
김재열
엄기상
김상훈
최시용
김용구
Original Assignee
세메스 주식회사
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 세메스 주식회사 filed Critical 세메스 주식회사
Priority to KR1020150073833A priority Critical patent/KR101907246B1/en
Publication of KR20160139259A publication Critical patent/KR20160139259A/en
Application granted granted Critical
Publication of KR101907246B1 publication Critical patent/KR101907246B1/en

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6831—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
    • H01L21/6833—Details of electrostatic chucks
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6831—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)

Abstract

A wafer is divided into a plurality of chips, which are subjected to an inspection process by a probe card, in an upper portion of the chuck structure. The wafer is placed in a coolant channel in which a coolant is injected in a downward direction, And may include a built-in heater.

Figure R1020150073833

Description

[0001] CHUCK STRUCTURE FOR SUPPORTING A WAFER [0002]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a chuck structure for supporting a wafer, and more particularly, to a chuck structure for supporting a wafer using the probe card to check its electrical performance.

Generally, semiconductor chips are fabricated by depositing a film on a wafer, an etching process for forming the film into patterns having electrical properties, an ion implantation process or diffusion process for implanting or diffusing impurities into the patterns, And a cleaning and rinsing process for removing impurities from the substrate on which they are formed.

After the semiconductor chips are formed by performing the above-described processes, an inspection process for inspecting the electrical performance of the semiconductor chips is performed. The inspection process is carried out by placing a wafer on which the semiconductor chips are formed on a chuck and then bringing a probe card having a plurality of probes connected to the test device into contact with the semiconductor chips of the wafer placed on the chuck. This is disclosed in Korean Patent Registration No. 10-1444808 (filed on Apr. 19, 2014, chuck plate for semiconductor wafer probe and its manufacturing method).

In this inspection process, as the current progresses from the probe card to each of the semiconductor chips, heat of up to about 2000 W can be generated in the semiconductor chips. In the inspection process, a coolant at a temperature of about -80 캜 is flown to the chuck on which the wafer is placed to remove heat generated from the semiconductor chips.

However, since the refrigerant is injected from the lateral side of the chuck, the temperature deviation between the side portion and the central portion of the chuck is very severe, about 11.5 DEG C, so that there is a possibility that the electrical performance of the semiconductor chips formed from the wafer have.

SUMMARY OF THE INVENTION It is an object of the present invention to provide a chuck structure capable of uniformly cooling wafers divided into a plurality of chips, which are subjected to an inspection process, according to their positions in the course of the inspection process.

According to an aspect of the present invention, there is provided a chuck structure on which a wafer is divided into a plurality of chips, which is inspected by a probe card on an upper portion of the chuck structure, And a discharge port for discharging the refrigerant from the refrigerant passage at the upper end is provided at a lower central portion of the chuck structure at an inlet for injecting the refrigerant into the refrigerant passage at the lower end of the chuck structure, A heater is installed in an upper portion of a central portion of the upper refrigerant passage, a second heater is installed around the heater, and the inlet port may be formed to surround the outlet port.

delete

delete

According to another aspect of the present invention, there is provided a chuck structure including a plurality of chips divided into a plurality of chips to be inspected by a probe card on an upper portion of the chuck structure, And a discharge port for discharging the refrigerant from the refrigerant passage at the lower end is provided at a lower central portion of the chuck structure at an inlet for injecting the refrigerant into the upper refrigerant passage A heater is installed in an upper portion of a central portion of the upper refrigerant channel, a second heater is embedded in the vicinity of the heater, and the outlet is formed to surround the inlet.

delete

delete

delete

According to embodiments of the present invention, the second heater may have a lower output than the heater.

According to the above-described embodiments of the present invention, the chuck structure on which the wafer is divided into a plurality of chips, which is subjected to the inspection process by the probe card, By incorporating a heater for raising the temperature at the injection port portion at a position facing the injection port, the temperature deviation between the region where the injection port is formed and the other region can be controlled very low.

Accordingly, it is possible to prevent an error in the inspection process of the chips according to the temperature deviation of the wafer mentioned in the background art of the invention by reducing the temperature deviation of the wafer placed on the chuck structure The reliability of the quality of the chips can be stably secured.

1 is a schematic view showing a cross section of a chuck structure according to an embodiment of the present invention.
FIGS. 2 and 3 are views showing embodiments in which refrigerant is injected or discharged along a refrigerant passage of the chuck structure shown in FIG. 1. FIG.
4 is a view illustrating a plurality of baffle portions of the chuck structure shown in FIG.
5 is a cross-sectional view specifically showing a portion where the baffle portion shown in FIG. 4 is formed.
FIG. 6 is a view showing a temperature distribution when the wafer placed on the chuck structure shown in FIG. 1 is heated to about 500 W and 1000 W, respectively.

Hereinafter, a chuck structure for supporting a wafer according to an embodiment of the present invention will be described in detail with reference to the accompanying drawings. The present invention is capable of various modifications and various forms, and specific embodiments are illustrated in the drawings and described in detail in the text. It should be understood, however, that the invention is not intended to be limited to the particular forms disclosed, but includes all modifications, equivalents, and alternatives falling within the spirit and scope of the invention. Like reference numerals are used for like elements in describing each drawing. In the accompanying drawings, the dimensions of the structures are enlarged to illustrate the present invention in order to clarify the present invention.

The terms first, second, etc. may be used to describe various components, but the components should not be limited by the terms. The terms are used only for the purpose of distinguishing one component from another. For example, without departing from the scope of the present invention, the first component may be referred to as a second component, and similarly, the second component may also be referred to as a first component.

The terminology used in this application is used only to describe a specific embodiment and is not intended to limit the invention. The singular expressions include plural expressions unless the context clearly dictates otherwise. In this application, the terms "comprises", "having", and the like are used to specify that a feature, a number, a step, an operation, an element, a part or a combination thereof is described in the specification, But do not preclude the presence or addition of one or more other features, integers, steps, operations, components, parts, or combinations thereof.

On the other hand, unless otherwise defined, all terms used herein, including technical or scientific terms, have the same meaning as commonly understood by one of ordinary skill in the art to which this invention belongs. Terms such as those defined in commonly used dictionaries are to be interpreted as having a meaning consistent with the contextual meaning of the related art and are to be interpreted as either ideal or overly formal in the sense of the present application Do not.

FIG. 1 is a schematic view showing a cross section of a chuck structure according to an embodiment of the present invention. FIGS. 2 and 3 illustrate embodiments in which a coolant is injected or discharged along a coolant channel of the chuck structure shown in FIG. 1 Respectively.

Referring to FIGS. 1 to 3, a wafer 10 is placed on an upper portion of a chuck structure 100 according to an embodiment of the present invention, in which an inspection process using a probe card (not shown) is performed.

Here, the inspection process is a process for checking electrical performance of a plurality of chips (not shown) formed on the wafer 10, and a plurality of probes (not shown) formed on the probe card are connected to the chips And then applying an electrical signal to each of the chips. At this time, the probe card may be electrically connected to a tester (not shown) for providing the electric signal. The chuck structure 100 also includes a plurality of vacuum holes (not shown) formed to vacuum-adsorb the wafer 10 so that the wafer 10 is stably placed on the upper surface on which the wafer 10 is placed . The chuck structure 100 may include a coolant channel 200 and a heater 300 formed to remove heat generated from the wafer 10 by a current applied to the chips from the probe card in the above- .

A coolant 20 at an extremely low temperature of about -80 ° C. injected from an injection port 210 is supplied to the coolant passage 200 to remove heat generated from the wafer 10. In this case, it is important that the coolant channel 200 uniformly remove the heat so as to have a uniform temperature distribution depending on the position of the wafer 10. The injection port 210 is formed in the chuck structure 100, And the coolant passage 200 may be formed uniformly with respect to the entire area of the chuck structure 100. [

The injection port 210 is formed at the center of the chuck structure 100 and the coolant channel 200 is uniformly distributed according to the position of the chuck structure 100. In the center of the chuck structure 100, As shown in Fig.

The heater 300 is embedded in the chuck structure 100 at a center thereof facing the injection port 210. The refrigerant 20 supplied to the refrigerant passage 200 maintains a cryogenic temperature at the inlet 210 and flows in the lateral direction along the refrigerant passage 200 of the radial structure, The heater 300 can raise the temperature at the center of the chuck structure 100 artificially, thereby basically reducing the temperature deviation from the side surface portion. At this time, the chuck structure 100 may further include a second heater 400 to supply heat to the refrigerant 20 flowing along the refrigerant passage 200 around the heater 300 so as to have a more stable temperature distribution. One additional can be embedded. Here, the second heater 400 may be provided with a lower output than the heater 300 because the refrigerant 20 is firstly supplied with a certain temperature by the heater 300 . Specifically, according to the above-described concept, the second heater 400 may be embedded so as to have a lower output as it moves away from the heater 300.

The refrigerant flow path 200 is formed so as to flow the refrigerant 20 in the lateral direction along the refrigerant flow path 200 having a radial structure from the injection port 210 formed at the center of the chuck structure 100 Stage structure so that the refrigerant 20 returns to the center from the side of the chuck structure 100 in a state where the refrigerant 20 flows from the chuck structure 100 to the center of the chuck structure 100, The temperature variation according to the position of the chuck structure 100 can be further reduced by adjusting the flow path to be uniform according to the position. In this case, the outlet 220 of the cooling passage may be formed at the center of the chuck structure 100 at the same position as the injection port 210. 2, the inlet port 210 is formed so as to surround the outlet port 220 in a state where the outlet port 220 is formed in the center of the chuck structure 100 As shown in FIG. 3, the discharge port 220 may be formed so as to surround the injection port 210 in a state where the injection port 210 is formed in the center of the chuck structure 100. Also, in the present embodiment, it has been described that when the cooling channel is formed in a two-stage structure, the temperature deviation according to the position of the chuck structure 100 can be reduced. However, It is possible to further reduce the temperature deviation of the temperature sensor.

The heater 300 may be embedded in the center of the chuck structure 100 according to the position of the injection port 210 and the second heater 400 may be installed in the vicinity of the heater 300, Can be embedded along the lateral direction of the structure 100.

As described above, the chuck structure (100) on which the wafer (10) divided by the plurality of chips, which is inspected by the probe card, is placed on the upper part, the coolant (20) is injected through the injection port The temperature difference between the portion where the injection port 210 is formed and the other portion is increased by incorporating the heater 300 for raising the temperature at the injection port 210 at a position facing the injection port 210 Can be adjusted very low.

Thus, by reducing the temperature deviation of the wafer 10 placed on the chuck structure 100, it is possible to reduce the temperature deviation of the chips 10 according to the temperature deviation of the wafer 10, It is possible to prevent errors from occurring in the process and to reliably assure the reliability of the quality of the chips.

Hereinafter, a structure for further reducing the temperature variation depending on the position of the chuck structure 100 will be described in more detail with reference to FIGS. 4 and 5. FIG.

FIG. 4 is a view showing a plurality of baffle portions of the chuck structure shown in FIG. 1, and FIG. 5 is a view specifically showing a cross section at a portion where the baffle portion shown in FIG. 4 is formed.

Referring to FIGS. 4 and 5, the chuck structure 100 may further include a plurality of baffle portions 500 installed in the refrigerant passage 200.

The baffle portions 500 are installed such that the cooling passage has a radial structure. Accordingly, the refrigerant 20 flows along the refrigerant passage 200 while being guided in a radial manner by the baffle portions 500.

4, the baffle portions 500 may be formed in a concentric circular structure to partially block the flow of the refrigerant 20, so that the refrigerant 20 can be prevented from being separated from the chuck 20. In this case, So that it can be more uniformly distributed over the entire structure 100.

The baffle portions 500 may have a partition structure that is blocked for heat transfer between the upper end surface 230 and the lower end surface 240 of the refrigerant passage 200. The heat generated from the wafer 10 placed on the chuck structure 100 can be easily transferred from the coolant passage 200 to the lower portion through the baffle portions 500. As a result, The chuck structure 100 can easily dissipate heat to the outside through the chuck structure 100, and the temperature variation according to the position of the chuck structure 100 can be further reduced.

Accordingly, when the baffle portions 500 are additionally provided in the chuck structure 100, the wafer 10 placed on the chuck structure 100 shown in FIG. 1 is heated to about 500 W and 1000 W, respectively, As shown in FIG. 6 showing the temperature distribution, it is confirmed that the temperature distribution of the chuck structure 100 is significantly lower than about 11 DEG C mentioned in the technique of the background of the present invention at about 2 DEG C or less depending on the position I could.

While the present invention has been described in connection with what is presently considered to be practical and exemplary embodiments, it is to be understood that the invention is not limited to the disclosed embodiments, but, on the contrary, It will be understood by those skilled in the art that various changes in form and details may be made therein without departing from the spirit and scope of the invention as defined by the appended claims.

10: wafer 20: refrigerant
100: Chuck structure 200: Refrigerant channel
210: inlet 220: outlet
300: heater 400: second heater
500: baffle portion

Claims (8)

1. A chuck structure, in which a wafer is divided into a plurality of chips on which an inspection process by a probe card is performed,
The chuck structure is provided with an upper and a lower two-stage refrigerant passage connected to an inner edge of the chuck structure. A lower central portion of the chuck structure is provided with an inlet for injecting refrigerant into the lower refrigerant passage, Wherein a heater is installed in an upper portion of a central portion of the upper refrigerant channel and a second heater is installed around the heater and the inlet is formed to surround the outlet. structure. delete delete 1. A chuck structure, in which a wafer is divided into a plurality of chips on which an inspection process by a probe card is performed,
The chuck structure is provided with an upper and a lower two-stage refrigerant flow path connected to the inside of the chuck structure. A lower central portion of the chuck structure is provided with an inlet for injecting the refrigerant into the upper refrigerant passage, Wherein a heater is installed in an upper portion of a center portion of the upper refrigerant channel and a second heater is installed around the heater and the outlet is formed to surround the inlet. structure. delete delete delete The chuck structure for supporting a wafer according to claim 1 or 4, wherein the second heater has a lower output than the heater.
KR1020150073833A 2015-05-27 2015-05-27 Chuck structure for supporting a wafer KR101907246B1 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1020150073833A KR101907246B1 (en) 2015-05-27 2015-05-27 Chuck structure for supporting a wafer

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1020150073833A KR101907246B1 (en) 2015-05-27 2015-05-27 Chuck structure for supporting a wafer

Publications (2)

Publication Number Publication Date
KR20160139259A KR20160139259A (en) 2016-12-07
KR101907246B1 true KR101907246B1 (en) 2018-12-07

Family

ID=57573527

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020150073833A KR101907246B1 (en) 2015-05-27 2015-05-27 Chuck structure for supporting a wafer

Country Status (1)

Country Link
KR (1) KR101907246B1 (en)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6349228B2 (en) * 2014-10-22 2018-06-27 新光電気工業株式会社 Electrostatic chuck and base member used for the electrostatic chuck
KR102622092B1 (en) * 2018-11-02 2024-01-09 세메스 주식회사 Method of controlling a temperature of a wafer supporting module
CN111324021A (en) * 2018-12-13 2020-06-23 夏泰鑫半导体(青岛)有限公司 Photoresist stripping equipment and wafer processing method
KR102678795B1 (en) * 2021-11-16 2024-06-26 한국생산기술연구원 Lower chuck of wafer prober having radial flow path and lattice structure, and method for manufacturing the same
KR102716208B1 (en) * 2022-05-19 2024-10-15 뉴브이테크 주식회사 Chuck for wafer and method for manufacturing the same

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001160479A (en) * 1999-12-01 2001-06-12 Tokyo Electron Ltd Ceramic heating resistor and board processing device using the same
KR100676203B1 (en) * 2005-06-21 2007-01-30 삼성전자주식회사 Cooling apparatus of electrostatic chuck for semiconductor equipment
JP2008187063A (en) * 2007-01-31 2008-08-14 Hitachi High-Technologies Corp Plasma processing equipment
JP2011520288A (en) * 2008-05-05 2011-07-14 アプライド マテリアルズ インコーポレイテッド Plasma reactor electrostatic chuck with multi-zone AC heater power transfer through coaxial RF feed and coaxial feed
JP2014209536A (en) * 2013-03-25 2014-11-06 東京エレクトロン株式会社 Substrate inspection device and substrate temperature adjustment method

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001160479A (en) * 1999-12-01 2001-06-12 Tokyo Electron Ltd Ceramic heating resistor and board processing device using the same
KR100676203B1 (en) * 2005-06-21 2007-01-30 삼성전자주식회사 Cooling apparatus of electrostatic chuck for semiconductor equipment
JP2008187063A (en) * 2007-01-31 2008-08-14 Hitachi High-Technologies Corp Plasma processing equipment
JP2011520288A (en) * 2008-05-05 2011-07-14 アプライド マテリアルズ インコーポレイテッド Plasma reactor electrostatic chuck with multi-zone AC heater power transfer through coaxial RF feed and coaxial feed
JP2014209536A (en) * 2013-03-25 2014-11-06 東京エレクトロン株式会社 Substrate inspection device and substrate temperature adjustment method

Also Published As

Publication number Publication date
KR20160139259A (en) 2016-12-07

Similar Documents

Publication Publication Date Title
KR101907246B1 (en) Chuck structure for supporting a wafer
US20100155725A1 (en) Insert module for a test handler
CN108630571B (en) Processing liquid supply device, substrate processing device, and processing liquid supply method
KR20160049069A (en) Chuck structure for testing a wafer using probe card
US9214373B2 (en) Chuck exhaust openings
US20190025370A1 (en) Substrate Mounting Table and Substrate Inspection Apparatus
TWI438863B (en) Stage unit for a probe station and apparatus for testing a wafer including the same
US9472476B2 (en) System and method for test structure on a wafer
CN108091583B (en) Substrate supporting assembly and probe station comprising same
KR102014334B1 (en) Cartridge for inspecting substrates and manufacturing method thereof
KR20180009090A (en) Chuck of supporting substrate and probe station having the same
KR101227718B1 (en) Probe station
KR20210036236A (en) Probing apparatus and method of operating the same
KR102049413B1 (en) Multi-probe system
KR102362249B1 (en) Probe station
US20100031504A1 (en) Method of manufacturing probe card
KR101040697B1 (en) Electrostatic Chuck
KR101272013B1 (en) Electrostatic chuck and wafer processing apparatus having the electrostatic chuck
KR20010090459A (en) Method for fabricating and checking structures of electronic circuits in a semiconductor substrate
KR20080061108A (en) Chuck for supporting a substrate and apparatus for manufacturing a substrates including the chuck
TWI507700B (en) Probe station
KR20180002373A (en) Method for controlling temperture of chuck for wafer test process
KR102307839B1 (en) Chuck structure for supporting a wafer
KR20080029425A (en) Electrostatic chuck
KR20160049070A (en) Chuck structure for heating a wafer

Legal Events

Date Code Title Description
A201 Request for examination
E902 Notification of reason for refusal
E701 Decision to grant or registration of patent right
GRNT Written decision to grant