TWI438863B - Stage unit for a probe station and apparatus for testing a wafer including the same - Google Patents

Stage unit for a probe station and apparatus for testing a wafer including the same Download PDF

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Publication number
TWI438863B
TWI438863B TW98115665A TW98115665A TWI438863B TW I438863 B TWI438863 B TW I438863B TW 98115665 A TW98115665 A TW 98115665A TW 98115665 A TW98115665 A TW 98115665A TW I438863 B TWI438863 B TW I438863B
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Taiwan
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wafer chuck
temperature
heating
wafer
route
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TW98115665A
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Chinese (zh)
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TW201025497A (en
Inventor
Meang-Kwon Kim
Eung-Su Kim
Su-Hyun Choi
In-Wook Hwang
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Semes Co Ltd
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Publication of TWI438863B publication Critical patent/TWI438863B/en

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    • GPHYSICS
    • G01MEASURING; TESTING
    • G01RMEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R31/00Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
    • G01R31/28Testing of electronic circuits, e.g. by signal tracer
    • G01R31/2851Testing of integrated circuits [IC]
    • G01R31/2855Environmental, reliability or burn-in testing
    • G01R31/286External aspects, e.g. related to chambers, contacting devices or handlers
    • G01R31/2865Holding devices, e.g. chucks; Handlers or transport devices
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01RMEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R31/00Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
    • G01R31/28Testing of electronic circuits, e.g. by signal tracer
    • G01R31/2851Testing of integrated circuits [IC]
    • G01R31/2855Environmental, reliability or burn-in testing
    • G01R31/2872Environmental, reliability or burn-in testing related to electrical or environmental aspects, e.g. temperature, humidity, vibration, nuclear radiation
    • G01R31/2874Environmental, reliability or burn-in testing related to electrical or environmental aspects, e.g. temperature, humidity, vibration, nuclear radiation related to temperature
    • G01R31/2875Environmental, reliability or burn-in testing related to electrical or environmental aspects, e.g. temperature, humidity, vibration, nuclear radiation related to temperature related to heating
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01RMEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R31/00Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
    • G01R31/28Testing of electronic circuits, e.g. by signal tracer
    • G01R31/2851Testing of integrated circuits [IC]
    • G01R31/2855Environmental, reliability or burn-in testing
    • G01R31/2872Environmental, reliability or burn-in testing related to electrical or environmental aspects, e.g. temperature, humidity, vibration, nuclear radiation
    • G01R31/2874Environmental, reliability or burn-in testing related to electrical or environmental aspects, e.g. temperature, humidity, vibration, nuclear radiation related to temperature
    • G01R31/2877Environmental, reliability or burn-in testing related to electrical or environmental aspects, e.g. temperature, humidity, vibration, nuclear radiation related to temperature related to cooling

Description

探針平台單元及包含該單元之晶圓測試裝置Probe platform unit and wafer test device including the same

本發明之所列舉之實施例係有關於用以支承一晶圓之一平台單元、具有用以支承晶圓之平台單元之一檢查裝置,並且更特別的是有關於一平台單元之溫度是根據一檢查程序中之晶圓之一溫度範圍而改變、具有平台單元之溫度是根據檢查程序中之晶圓之溫度範圍而改變之一檢查裝置。The embodiments of the present invention relate to an inspection apparatus for supporting a platform unit of a wafer, having a platform unit for supporting a wafer, and more particularly, the temperature of a platform unit is based on The temperature of one of the wafers in the inspection program is changed, and the temperature of the platform unit is changed according to the temperature range of the wafer in the inspection program.

一般而言,積體電路裝置係於一半導體基底(例如:晶圓)之上進行製造,因而可於一製造過程中而於晶圓之上製作出複數晶片,如此以提供一半導體裝置之使用。在藉由一晶粒排序製程之下,於具有複數晶片之整個晶圓上係進行了一電性檢查程序。各晶粒係自晶圓而進行切割且與一導線框架之間進行組裝,藉此便可製造一半導體裝置(例如:一記憶裝置)。In general, an integrated circuit device is fabricated on a semiconductor substrate (eg, a wafer) so that a plurality of wafers can be fabricated on a wafer during a manufacturing process to provide a semiconductor device. . An electrical inspection procedure is performed on the entire wafer having a plurality of wafers by a die sorting process. Each of the die is cut from the wafer and assembled with a lead frame, whereby a semiconductor device (for example, a memory device) can be fabricated.

具有一探針裝置與一測試器之一檢查系統係通常用於在晶圓之晶片之上進行檢查程序。在藉由測試器之作用下,經由探針裝置之一接觸端子係可將電力及各種測試信號施加於晶圓之一接觸墊,並且經由晶片之一電極所產生之輸出信號係可藉由測試器而進行偵測與分析。當一特別輸出信號脫離於一允許範圍時,測試器係會對於產生了特別輸出信號之晶片進行測定且將其定義為一有缺陷晶片。An inspection system having a probe device and a tester is typically used to perform inspection procedures on wafers of wafers. The power and various test signals can be applied to one of the contact pads of the wafer by contacting the terminal system via one of the probe devices by the tester, and the output signal generated by one of the electrodes of the wafer can be tested by Detection and analysis. When a particular output signal is out of an allowable range, the tester measures the wafer from which the particular output signal is produced and defines it as a defective wafer.

探針裝置係經常於各種檢查條件與各晶片之各種使用要件下進行檢查程序。舉例而言,位於晶圓上之晶片係可於約在40℃至150℃或約在-60℃至-200℃之寬溫度範圍內進行檢查。為了對於上述之寬溫度範圍進行控制,通常是利用於探針裝置中之一加熱器或一冷卻器對於平台單元進行加熱或冷卻。The probe device is often subjected to inspection procedures under various inspection conditions and various use requirements of each wafer. For example, the wafer on the wafer can be inspected at a temperature ranging from about 40 ° C to 150 ° C or from about -60 ° C to -200 ° C. In order to control the wide temperature range described above, it is common to use a heater or a cooler in the probe device to heat or cool the platform unit.

舉例而言,在一低溫度檢查程序完成之後便可立刻進行一高溫度檢查程序。在進行低溫度檢查程序時,冷卻器係提供一冷卻劑至平台單元,如此以減少一晶圓夾頭之溫度。在晶圓夾頭之溫度被減少之後,藉由加熱器將熱量係被供應至平台單元,如此以進行高溫度檢查程序。然而,由於熱量係被供應至平台單元,用以進行低溫度檢查程序之液化冷卻劑係於平台單元之中而被蒸發,因而使得被蒸發之冷卻劑係自平台單元而被向外排放。此外,冷卻劑之一殘留部分係可維持在一供給路線之中,並且冷卻劑之殘留部分係可不需安排的情況下而供給至平台單元之中,因而使得所加熱之平台單元可具有一非均勻溫度分佈。For example, a high temperature check procedure can be performed immediately after a low temperature check procedure is completed. During the low temperature check procedure, the chiller provides a coolant to the platform unit to reduce the temperature of a wafer chuck. After the temperature of the wafer chuck is reduced, heat is supplied to the platform unit by the heater, thus performing a high temperature inspection procedure. However, since the heat is supplied to the platform unit, the liquefied coolant for performing the low temperature inspection process is evaporated in the platform unit, thereby causing the evaporated coolant to be discharged outward from the platform unit. In addition, one of the remaining portions of the coolant can be maintained in a supply route, and the residual portion of the coolant can be supplied to the platform unit without arrangement, thereby allowing the heated platform unit to have a non- Uniform temperature distribution.

所列舉之實施例係提供了一平台單元,不論是在一檢查系統中之一高溫度檢查程序及一低溫度檢查程序之下,此平台單元之一晶圓夾頭可具有一均勻溫度。The illustrated embodiment provides a platform unit that can have a uniform temperature for one wafer chuck of the platform unit, regardless of a high temperature inspection procedure and a low temperature inspection procedure in an inspection system.

所列舉之實施例係提供了具有上述平台單元之一檢查系統。The illustrated embodiment provides an inspection system having one of the above platform units.

根據本發明之概念下之部分列舉之實施例中,這些實施例係提供了用於一探針台之一平台單元。平台單元包括一晶圓夾頭、一管路路線、一加熱元件與一加熱塊。一晶圓係用於定位於晶圓夾頭之上,於晶圓夾頭內包括一流動路徑。冷卻劑係流經管路路線而進入晶圓夾頭,藉此將晶圓夾頭冷卻至一第一溫度,管路路線連接於晶圓夾頭之流動路徑,並且管路路線包括一供給路線與一排放路線,供給路線係將冷卻劑供給至晶圓夾頭,排放路線係對於來自於晶圓夾頭之冷卻劑進行排放。加熱元件係設置於晶圓夾頭之中且用以對於晶圓夾頭進行加熱。加熱塊係定位鄰接於晶圓夾頭,當晶圓夾頭係經由第一溫度而改變至一第二溫度時,加熱塊係藉由熱量而對於殘留於供給路線中之剩餘冷卻劑進行蒸發,第二溫度係經加熱元件而高於第一溫度。於一所列舉之實施例之中,加熱塊係可包括一加熱線圈與一遮蔽板。加熱線圈係可被定位鄰接於晶圓夾頭且對於供給路線進行圍繞。熱量係由加熱線圈所產生,並且第二殘留冷卻劑係可於供給路線中被蒸發,藉此以避免由加熱線圈所產生的熱量被向外傳遞。平台單元更包括一控制器,控制器係用以控制加熱塊之加熱線圈,如此可於一第一時間將加熱塊加熱至一第三溫度且於第一時間之一消逝之後可於一第二時間將加熱塊降溫至低於第三溫度之一第四溫度,而晶圓夾頭係被加熱至第二溫度,藉此以減少於第三溫度時之加熱塊所產生之熱量所造成的熱損傷。In accordance with some of the embodiments listed in the concept of the present invention, these embodiments provide a platform unit for a probe station. The platform unit includes a wafer chuck, a pipeline route, a heating element and a heating block. A wafer is positioned over the wafer chuck and includes a flow path within the wafer chuck. The coolant flows through the pipeline path into the wafer chuck, thereby cooling the wafer chuck to a first temperature, the pipeline route is connected to the flow path of the wafer chuck, and the pipeline route includes a supply route and A discharge route, the supply route supplies coolant to the wafer chuck, and the discharge route discharges the coolant from the wafer chuck. The heating element is disposed in the wafer chuck and is used to heat the wafer chuck. The heating block is positioned adjacent to the wafer chuck. When the wafer chuck is changed to a second temperature via the first temperature, the heating block evaporates the remaining coolant remaining in the supply path by heat. The second temperature is above the first temperature via the heating element. In one of the illustrated embodiments, the heating block can include a heating coil and a shielding plate. The heating coil system can be positioned adjacent to the wafer chuck and surrounded for the supply path. The heat is generated by the heating coil, and the second residual coolant can be evaporated in the supply path, thereby preventing heat generated by the heating coil from being transferred outward. The platform unit further includes a controller for controlling the heating coil of the heating block, so that the heating block can be heated to a third temperature for a first time and can be second after one of the first time elapses. Time to cool the heating block to a fourth temperature lower than the third temperature, and the wafer chuck is heated to a second temperature, thereby reducing the heat caused by the heat generated by the heating block at the third temperature damage.

根據本發明之概念下之部分列舉之實施例中,這些實施例提供了一種裝置,此裝置係用於檢查一晶圓。此裝置包括一腔室、一平台單元與一探針卡單元。腔室包括一檢查空間,晶圓係於腔室之檢查空間中進行檢查。平台單元包括一晶圓夾頭、一管路路線、一加熱元件與一加熱塊,晶圓夾頭內包括一流動路徑且對於晶圓進行支承,一冷卻劑係流經管路路線而進入晶圓夾頭,藉此將晶圓夾頭冷卻至一第一溫度,管路路線係連接於晶圓夾頭之流動路徑且管路路線包括一供給路線與一排放路線,供給路線係將冷卻劑供給至晶圓夾頭,排放路線係對於來自於晶圓夾頭之冷卻劑進行排放,加熱元件係設置於晶圓夾頭之中且用以對於晶圓夾頭進行加熱,加熱塊係定位鄰接於晶圓夾頭,當晶圓夾頭係經由第一溫度而改變至一第二溫度時,加熱塊係藉由熱量而對於殘留於供給路線中之剩餘冷卻劑進行蒸發,第二溫度係經加熱元件而高於第一溫度。探針卡單元係設置有一探針卡,探針卡係用以對於晶圓進行檢查。於一列舉之實施例中,加熱塊包括一加熱線圈與一遮蔽板。加熱線圈係對於鄰接於晶圓夾頭之供給路線進行圍繞且對於供給路線進行加熱。遮蔽板係對於加熱線圈與供給路線進行包覆,藉此以避免由加熱線圈所產生的熱量被向外傳遞至。平台單元更包括一控制器,控制器係用以控制加熱塊之加熱線圈,如此可於一第一時間將加熱塊加熱至一第三溫度且於第一時間之一消逝之後可於一第二時間將加熱塊降溫至低於第三溫度之一第四溫度,而晶圓夾頭係被加熱至第二溫度,藉此以減少於第三溫度時之加熱塊所產生之熱量所造成的熱損傷。In accordance with some of the enumerated embodiments of the present inventive concept, these embodiments provide a device for inspecting a wafer. The device includes a chamber, a platform unit and a probe card unit. The chamber includes an inspection space, and the wafer is inspected in the inspection space of the chamber. The platform unit includes a wafer chuck, a pipeline route, a heating element and a heating block. The wafer chuck includes a flow path and supports the wafer, and a coolant flows through the pipeline to enter the wafer. The chuck, thereby cooling the wafer chuck to a first temperature, the pipeline route is connected to the flow path of the wafer chuck and the pipeline route includes a supply route and a discharge route, and the supply route supplies the coolant To the wafer chuck, the discharge route discharges the coolant from the wafer chuck, and the heating element is disposed in the wafer chuck for heating the wafer chuck, and the heating block is positioned adjacent to The wafer chuck, when the wafer chuck is changed to a second temperature via the first temperature, the heating block evaporates the remaining coolant remaining in the supply path by heat, and the second temperature is heated. The component is above the first temperature. The probe card unit is provided with a probe card for checking the wafer. In an exemplary embodiment, the heating block includes a heating coil and a shielding plate. The heating coil surrounds the supply path adjacent to the wafer chuck and heats the supply path. The shielding plate covers the heating coil and the supply path, thereby preventing heat generated by the heating coil from being transmitted to the outside. The platform unit further includes a controller for controlling the heating coil of the heating block, so that the heating block can be heated to a third temperature for a first time and can be second after one of the first time elapses. Time to cool the heating block to a fourth temperature lower than the third temperature, and the wafer chuck is heated to a second temperature, thereby reducing the heat caused by the heat generated by the heating block at the third temperature damage.

根據本發明之概念下之部分列舉之實施例中,當一檢查模式經由一低溫度檢查程序改變至一高溫度檢查程序時,位於一供給路線中之一殘留冷卻劑係可於供給路線中進行蒸發。因此,供給路線之內部壓力係會增加,並且可完全地避免液化冷卻劑流入一晶圓夾頭之中,藉此以減少晶圓夾頭之溫度變化且增加晶圓夾頭之溫度均勻性。According to a partially enumerated embodiment of the concept of the present invention, when an inspection mode is changed to a high temperature inspection program via a low temperature inspection program, a residual coolant in a supply route can be performed in the supply route. evaporation. Therefore, the internal pressure of the supply route is increased, and the liquefied coolant can be completely prevented from flowing into a wafer chuck, thereby reducing the temperature variation of the wafer chuck and increasing the temperature uniformity of the wafer chuck.

以下將配合所附圖式對於所列舉之實施例進行詳盡說明。雖然本發明已以較佳實施例揭露如上,然其並非用以限制本發明,任何熟習此項技藝者,在不脫離本發明之精神和範圍內,當可做更動與潤飾,因此本發明之保護範圍當視後附之申請專利範圍所界定者為準。為了達到清楚的說明,於圖式中之層次與區域之尺寸及相對尺寸將會以誇大方式進行呈現。The enumerated embodiments are described in detail below in conjunction with the drawings. Although the present invention has been disclosed in the above preferred embodiments, it is not intended to limit the present invention, and the present invention can be modified and retouched without departing from the spirit and scope of the present invention. The scope of protection is subject to the definition of the scope of the patent application attached. For the sake of clarity, the dimensions and relative dimensions of the layers and regions in the drawings will be presented in an exaggerated manner.

可以理解的是,當一元件或層與另一元件或層之關係被指示為“on(一元件或層位於另一元件或層之上)”、“connected to(一元件或層連接於另一元件或層)”或“coupled to(一元件或層耦接於另一元件或層)”時,則表示一元件或層是可直接位於另一元件或另或層之上、一元件或層是可直接連接於另一元件或層、或一元件或層是可直接耦接於另一元件或層,或是中間元件或層是可存在的。相反地,當一元件或層與另一元件或層之關係被指示為“directly on(一元件或層直接位於另一元件或層之上)”、“directly connected to(一元件或層直接連接於另一元件或層)”或“directly coupled to(一元件或層直接耦接於另一元件或層)”時,則表示中間元件或層是不存在的。於全文中係以相同的符號表示相同的元件。於此所述之名稱“and/or(及/或)”包括了一或多個相關所列項目之任一與所有組合。It will be understood that the relationship between an element or layer and another element or layer is indicated as "on (one element or layer is on the other element or layer)", "connected to" When an element or layer or "coupled to" or "layer" or "layer" or "layer" or "layer" A layer may be directly connected to another element or layer, or an element or layer may be directly coupled to another element or layer, or an intermediate element or layer may be present. In contrast, when an element or layer is referred to as "directly on" or "directly connected to" or "directly connected to". When another element or layer "" or "directly coupled to" is used, it is meant that the element or layer is not present. The same elements are denoted by the same symbols throughout the text. The term "and/or" as used herein includes any and all combinations of one or more of the associated listed items.

可以理解的是,雖然第一、第二、第三等名稱是可用以描述各種元件、零件、區域、層及/或段部,但這些元件、零件、區域、層及/或段部並不受限於這些名稱,並且這些名稱僅是為了用以將一元件、一零件、一區域、一層或一段部與另一元件、另一零件、另一區域、另一層或另一段部之間進行區隔。在不脫離本發明之教導下,以下所討論之一第一元件、一第一零件、一第一區域、一第一層或一第一段部係可被稱做一第二元件、一第二零件、一第二區域、一第二層或一第二段部。It will be understood that although the first, second, third, etc. names may be used to describe various elements, parts, regions, layers and/or segments, these elements, parts, regions, layers and/or segments are not They are limited to these names, and these names are only used to make one element, one part, one area, one layer or one part with another element, another part, another area, another layer or another part. Separate between. One of the first elements, a first part, a first area, a first layer or a first section discussed below may be referred to as a second element, one without departing from the teachings of the present invention. a second part, a second area, a second layer or a second section.

為便於說明起見,空間相關名稱(例如:“beneath(位於…之下方)”、“below(位於…之下)”、“lower(底部)”、“above(位於…之上方)”、“upper(位於…之上)”及類似名稱)係用於對於圖式中之一元件或一外貌關係與另一元件或另一外貌關係之間進行描述。可以理解的是,這些空間相關名稱除了對於圖式中所述的方向進行說明之外,藉由這些空間相關名稱係可用以包含了於使用中或操作中之裝置之不同方向。舉例而言,如果在圖式中所示之裝置被翻倒時,則原本以“複數元件位於其它元件之下”或“複數元件位於其它元件之下方”或外貌的描述便會改變成為“複數元件位於其它元件之上方”或外貌之樣態。因此,“below(位於…之下)”之示範名稱是可同時包含above(位於…之上方)與below(位於…之下)之方向。裝置係可採用其它方式(以90度或以其它方向進行迴轉)進行轉向,因而於此可利用空間相關描述符號來解釋。For convenience of explanation, space-related names (for example: "beneath (below)", "below", "lower", "above", " Upper (on top of) and the like are used to describe one element or one appearance relationship in the drawings and another element or another appearance relationship. It will be understood that these spatially related names may be used to encompass different orientations of the device in use or operation, in addition to the orientations illustrated in the drawings. For example, if the device shown in the drawings is turned over, the description of the "plural component below the other component" or "the plural component is below the other component" or appearance will be changed to "plural" The component is located above the other components" or the appearance. Therefore, the "below" example name can include both the above (above...) and below (below). The device can be steered in other ways (rotating at 90 degrees or in other directions) and thus can be explained using spatially related descriptors.

於此所使用之專有名稱僅是用以描述特定實施例,但不因此而造成本發明之限制。單數型式“a(一)”、“an(一)”、“the(該)”係同樣可以包含複數型式,除非是在文字上有清楚的指明。更可以理解的是,當於說明書中使用了“comprises(包括)”及/或“comprising(包括)”等名稱以指明了所述特徵、整體、步驟、操作、元件及/或零件之存在時,但不會因此而排除了一或多個其它特徵、整體、步驟、操作、元件、零件及/或其族群之存在或附加。The specific names used herein are for the purpose of describing particular embodiments, and are not intended to limit the invention. The singular forms "a", "an", "the" and "the" may also include the plural unless the words are clearly indicated. It will be further understood that the terms "comprises" and/or "comprising" are used in the specification to indicate the presence of the features, integers, steps, operations, components and/or parts. However, the existence or addition of one or more other features, elements, steps, operations, components, parts and/or their groups are not excluded.

就所述實施例之所附剖面圖而言,這些剖面圖係為理想實施例(以及中間結構)之示意圖,因而就製造技術及/或公差之圖式形狀所產生之變化例子是可以預期的。因此,所列舉之實施例不應被解釋為受限於圖式中所描繪之特定區域形狀及製造時所產生之形狀上的誤差。舉例而言,以一矩形所繪製之一植入區域通常是可具有圓角化或曲形化外貌且/或於矩形之邊緣上具有植入濃度之梯度,而不是在植入區域至非植入區域產生二進位變化。同樣地,在經由植入方式所形成之一埋入區域的作用下,於埋入區域與進行植入所通過之表面之間的區域將會產生部分的植入。因此,於圖式中所繪製之複數區域均簡單示意,並且這些區域之形狀並非用以描繪一裝置之一區域之真實形狀且非用以造成本發明之領域之限制。With respect to the cross-sectional views of the embodiments, these cross-sectional views are schematic representations of the preferred embodiments (and intermediate structures), and thus variations in the shapes of the manufacturing techniques and/or tolerances are contemplated. . Therefore, the illustrated embodiments are not to be construed as limited to the particular shapes of the particular aspects depicted in the drawings and the. For example, an implanted area drawn in a rectangle typically has a fillet or curved appearance and/or a gradient of implant concentration on the edge of the rectangle, rather than in the implanted area to non-planted The inbound region produces a binary change. Similarly, under the action of a buried region formed by implantation, a partial implantation will occur in the region between the buried region and the surface through which the implantation takes place. Accordingly, the plural regions in the drawings are simply illustrated, and the shapes of these regions are not intended to depict the true shape of one of the regions of the device and are not intended to limit the scope of the invention.

除非另有定義,於此所使用之所有名稱(包括技術名稱及科學名稱)係與任何熟習本發明所屬之技藝者所理解的意義是相同的。更可以理解的是,就與相關技術文字中之名稱的意義是可利用與一般字典中具有一致性名稱之意義而加以定義,並且除非在說明書中有特別的定義,否則這些名稱是不宜採用理想或過度形式觀念的方式而加以定義。All names (including technical names and scientific names) used herein are the same as those understood by those skilled in the art to which the invention pertains, unless otherwise defined. It will be further understood that the meanings of the names in the relevant technical text are defined by the meaning of having a consistent name in the general dictionary, and unless otherwise specified in the specification, these names are not suitable for use. Or define it in a way that is over-formal.

以下將配合所附圖式對於所列舉之實施例進行詳盡說明。第1圖表示根據本發明之一實施例之用於一探針台之一平台單元100之剖面圖。第2圖表示於第1圖中之平台單元100之一加熱塊上之溫度與加熱時間之間的關係圖式。The enumerated embodiments are described in detail below in conjunction with the drawings. 1 shows a cross-sectional view of a platform unit 100 for a probe station in accordance with an embodiment of the present invention. Fig. 2 is a view showing the relationship between the temperature on the heating block of the stage unit 100 in Fig. 1 and the heating time.

請參閱第1圖,根據本發明之第一實施例之平台單元100係用於一探針台,此平台單元100包括了一晶圓夾頭110、一供給路線121、一排放路線123與一加熱塊130。晶圓夾頭110係用以支承一晶圓W。供給路線121係將一冷卻劑供給至晶圓夾頭110。排放路線123係對於來自於晶圓夾頭110之冷卻劑進行排放。加熱塊130係對於殘留於供給路線121中之剩餘冷卻劑進行蒸發。Referring to FIG. 1 , a platform unit 100 according to a first embodiment of the present invention is used for a probe station. The platform unit 100 includes a wafer chuck 110 , a supply route 121 , a discharge route 123 and a The block 130 is heated. The wafer chuck 110 is used to support a wafer W. The supply path 121 supplies a coolant to the wafer chuck 110. The discharge route 123 is for discharging the coolant from the wafer chuck 110. The heating block 130 evaporates the remaining coolant remaining in the supply path 121.

於所列舉的一實施例中,晶圓夾頭110係以晶圓W之形狀而進行成型,並且晶圓W係可穩固地定位於晶圓夾頭110之上。舉例而言,當晶圓W以一盤狀而成型時,則晶圓夾頭110亦具有盤狀的外形。複數晶片係可製作於晶圓W之上。In one embodiment, the wafer chuck 110 is formed in the shape of a wafer W, and the wafer W is stably positioned over the wafer chuck 110. For example, when the wafer W is formed in a disk shape, the wafer chuck 110 also has a disk-like shape. A plurality of wafer systems can be fabricated on the wafer W.

晶圓夾頭110係可沿著一x方向、一y方向、一z方向等三個不同方向而進行移動,並且晶圓夾頭110係可相對於其一中心軸而進行轉動。因此,晶圓夾頭110係可耦接於一第一驅動單元(未圖示)與一第二驅動單元(未圖示),晶圓夾頭110係可經由第一驅動單元而沿著x方向、y方向、z方向進行線性移動,並且晶圓夾頭110係可經由第二驅動單元(未圖示)而進行轉動。第一驅動單元可包括一氣壓缸、一液壓缸與一線性馬達,並且第二驅動單元係可包括使用一螺桿與一軸承之一發電機。位於晶圓夾頭110之上之晶圓W之複數晶片係可電性連接於一探針卡(未圖示)之複數頂端(未圖示)。The wafer chuck 110 is movable in three different directions, such as an x direction, a y direction, and a z direction, and the wafer chuck 110 is rotatable relative to a central axis thereof. Therefore, the wafer chuck 110 can be coupled to a first driving unit (not shown) and a second driving unit (not shown), and the wafer chuck 110 can be along the x via the first driving unit. The direction, the y direction, and the z direction are linearly moved, and the wafer chuck 110 is rotatable via a second driving unit (not shown). The first drive unit may include a pneumatic cylinder, a hydraulic cylinder and a linear motor, and the second drive unit may include a generator using a screw and a bearing. The plurality of wafers of the wafer W located above the wafer chuck 110 are electrically connected to a plurality of tips (not shown) of a probe card (not shown).

一流動路徑115係可提供於晶圓夾頭110之內側,並且一冷卻劑係可沿著流動路徑115而流動。舉例而言,流動路徑115係可Z字形狀而進行成型。流動路徑115之長度與形狀係可根據平台單元100與冷卻劑之溫度範圍而改變。A flow path 115 can be provided inside the wafer chuck 110 and a coolant can flow along the flow path 115. For example, the flow path 115 can be shaped in a zigzag shape. The length and shape of the flow path 115 may vary depending on the temperature range of the platform unit 100 and the coolant.

供給路線121係可連接於位在晶圓夾頭110中之流動路徑115,如此可使得用以對於晶圓夾頭110進行冷卻之冷卻劑可經由流動路徑115而被供給至晶圓夾頭110之中。當一濃縮且液化冷卻劑經由供給路線121而被供給至晶圓夾頭110之內側時,則晶圓夾頭110可被充份地冷卻至一較低溫度,如此可於一第一溫度下而對於晶圓夾頭110之上之晶圓W進行檢查,此第一溫度係低於一第二溫度。供給路線121係可連接於一儲存槽120,此儲存槽120係用以對於冷卻劑進行保存。The supply path 121 can be connected to the flow path 115 located in the wafer chuck 110 such that the coolant used to cool the wafer chuck 110 can be supplied to the wafer chuck 110 via the flow path 115. Among them. When a concentrated and liquefied coolant is supplied to the inside of the wafer chuck 110 via the supply path 121, the wafer chuck 110 can be sufficiently cooled to a lower temperature so that it can be at a first temperature The wafer W above the wafer chuck 110 is inspected for a first temperature below a second temperature. The supply route 121 can be connected to a storage tank 120 for storing the coolant.

於所列舉的一實施例中,排放路線123係可連接於位在晶圓夾頭110之中之流動路徑115。來自於晶圓夾頭110之用以對於晶圓夾頭110進行冷卻之冷卻劑可經由排放路線123而進行排放,因而可在晶圓夾頭110中、藉由供給路線121與排放路線123而對於冷卻劑進行循環。因此,經由供給路線121所供給之冷卻劑係可於晶圓夾頭110之內部進行循環,並且隨後可經由排放路線123係對於來自於晶圓夾頭110之冷卻劑進行排放。In the illustrated embodiment, the venting route 123 is connectable to a flow path 115 located in the wafer chuck 110. The coolant from the wafer chuck 110 for cooling the wafer chuck 110 can be discharged via the discharge path 123, and thus can be in the wafer chuck 110 by the supply route 121 and the discharge route 123. The coolant is circulated. Therefore, the coolant supplied via the supply route 121 can be circulated inside the wafer chuck 110, and then the coolant from the wafer chuck 110 can be discharged via the discharge route 123.

加熱塊130係可定位鄰接於晶圓夾頭110,並且加熱塊130係可對於供給路線121之至少一部分進行圍繞。The heating block 130 can be positioned adjacent to the wafer chuck 110 and the heating block 130 can be wrapped around at least a portion of the supply path 121.

晶圓W係可於第二溫度下進行檢查,此第二溫度係高於第一溫度。也就是說,當在一低溫度檢查程序之後執行了一高溫度檢查程序時,晶圓W係可在高於第一溫度之第二溫度下進行檢查。於所列舉之實施例中,複數加熱元件150係可設置於晶圓夾頭110之中,如此使得晶圓夾頭110可被加熱至第二溫度。殘留於流動路徑115中之一第一殘留冷卻劑係可被蒸發而離開了晶圓夾頭110。然而,雖然在晶圓夾頭110中設置有加熱元件150,冷卻劑係可殘留於鄰接晶圓夾頭110之供給路線121之中。圍繞於供給路線121之加熱元件150係可對於殘留於供給路線121中之一第二殘留冷卻劑進行加熱,藉此以對於第二殘留冷卻劑進行蒸發。因此,冷卻劑之蒸發將可能造成供給路線121之一內部壓力的增加,因而使得蒸發的冷卻劑可滲入晶圓夾頭110之中。因此,相較於液化冷卻劑被供給至晶圓夾頭110時之晶圓夾頭110的溫度變化程度而言,於被蒸發之冷卻劑被供給至晶圓夾頭110時之晶圓夾頭110的溫度變化更可被降至最低。The wafer W system can be inspected at a second temperature that is higher than the first temperature. That is, when a high temperature check procedure is performed after a low temperature check procedure, the wafer W can be inspected at a second temperature higher than the first temperature. In the illustrated embodiment, a plurality of heating elements 150 can be disposed in the wafer chuck 110 such that the wafer chuck 110 can be heated to a second temperature. One of the first residual coolant remaining in the flow path 115 can be evaporated away from the wafer chuck 110. However, although the heating element 150 is disposed in the wafer chuck 110, the coolant may remain in the supply path 121 adjacent the wafer chuck 110. The heating element 150 surrounding the supply path 121 can heat one of the second residual coolant remaining in the supply path 121, thereby evaporating for the second residual coolant. Therefore, evaporation of the coolant will likely cause an increase in the internal pressure of one of the supply paths 121, thereby allowing the evaporated coolant to penetrate into the wafer chuck 110. Therefore, the wafer chuck when the evaporated coolant is supplied to the wafer chuck 110 is compared with the degree of temperature change of the wafer chuck 110 when the liquefied coolant is supplied to the wafer chuck 110. The temperature change of 110 can be reduced to a minimum.

於所列舉的一實施例中,加熱塊130係可包括一加熱線圈131與一遮蔽板133。加熱線圈131係可被定位鄰接於晶圓夾頭110且對於供給路線121進行圍繞。熱量係由加熱線圈131所產生,並且第二殘留冷卻劑係可於供給路線121中被蒸發。舉例而言,加熱線圈131可包括一鎢W線圈。In one embodiment, the heating block 130 can include a heating coil 131 and a shielding plate 133. The heating coil 131 can be positioned adjacent to the wafer chuck 110 and surrounded for the supply path 121. The heat is generated by the heating coil 131, and the second residual coolant can be evaporated in the supply path 121. For example, the heating coil 131 can include a tungsten W coil.

遮蔽板133係可對於加熱線圈131進行包覆且係可避免由加熱線圈131所產生的熱量被傳遞至平台單元100之其它元件。因此,由加熱線圈131所產生的熱量便可被集中地傳送至遮蔽板133。The shielding plate 133 can cover the heating coil 131 and prevent heat generated by the heating coil 131 from being transmitted to other elements of the platform unit 100. Therefore, the heat generated by the heating coil 131 can be collectively transmitted to the shielding plate 133.

請參閱第1、2圖,當加熱塊130被過度加熱時,加熱塊130之熱量將會造成平台單元100之其它元件的熱損傷。有鑑於此,於一第一時間t1將加熱塊130加熱至一第三溫度T1,並且於第一時間t1之一消逝之後可於一第二時間將加熱塊130降溫至低於第三溫度T1之一第四溫度。因此,當液化冷卻劑經由供給路線121而被供給至晶圓夾頭110時,冷卻劑係可於第四溫度時而被蒸發。也就是說,鄰接於晶圓夾頭110之供給路線121中之冷卻劑係可在一相對較低溫度下而被蒸發,並且雖然蒸發的冷卻劑係可滲入晶圓夾頭110之中,但晶圓夾頭110之溫度係幾乎不會受到被蒸發的冷卻劑之影響而改變。因此,晶圓夾頭110之溫度係以均勻方式而維持在第二溫度。Referring to Figures 1 and 2, when the heating block 130 is overheated, the heat of the heating block 130 will cause thermal damage to other components of the platform unit 100. In view of this, the heating block 130 is heated to a third temperature T1 at a first time t1, and the heating block 130 can be cooled to a temperature lower than the third temperature T1 at a second time after one of the first times t1 elapses. One of the fourth temperatures. Therefore, when the liquefied coolant is supplied to the wafer chuck 110 via the supply path 121, the coolant can be evaporated at the fourth temperature. That is, the coolant in the supply path 121 adjacent to the wafer chuck 110 can be evaporated at a relatively low temperature, and although the evaporated coolant can penetrate into the wafer chuck 110, The temperature of the wafer chuck 110 is hardly altered by the effect of the evaporated coolant. Therefore, the temperature of the wafer chuck 110 is maintained at the second temperature in a uniform manner.

舉例而言,當冷卻劑約具有76℃之一沸點時,第三溫度係約介於500℃至約700℃之間,第四溫度係約介於100℃至約200℃之間。For example, when the coolant has a boiling point of about 76 ° C, the third temperature is between about 500 ° C and about 700 ° C and the fourth temperature is between about 100 ° C and about 200 ° C.

於所列舉的一實施例中,平台單元100更可包括一控制器140,此控制器140係用以控制加熱塊130之一溫度。換言之,加熱塊130係可藉由控制器140而被加熱或被冷卻。舉例而言,可於第一時間t1時係將加熱塊130維持在第三溫度T1,並且隨後可於第二時間t2時係將加熱塊130維持在第四溫度T2。In an exemplary embodiment, the platform unit 100 further includes a controller 140 for controlling the temperature of one of the heating blocks 130. In other words, the heating block 130 can be heated or cooled by the controller 140. For example, the heating block 130 can be maintained at the third temperature T1 at the first time t1, and then the heating block 130 can be maintained at the fourth temperature T2 at the second time t2.

如上所述,用於探針台之平台單元100更包括了設置於晶圓夾頭110中之加熱元件150。As mentioned above, the platform unit 100 for the probe station further includes a heating element 150 disposed in the wafer chuck 110.

於所列舉的一實施例中,加熱元件150係可位於晶圓夾頭110之內部,晶圓夾頭110係可經由加熱元件150之加熱而自第一溫度改變至第二溫度。舉例而言,加熱元件150係可以Z字形狀而進行設置,並且加熱元件150係可包括一發電機(例如:一鎢(W)線圈)。In one embodiment, the heating element 150 can be located inside the wafer chuck 110, and the wafer chuck 110 can be changed from the first temperature to the second temperature by heating of the heating element 150. For example, the heating element 150 can be arranged in a zigzag shape, and the heating element 150 can include a generator (eg, a tungsten (W) coil).

第3圖表示於第1圖中之具有平台單元100之一裝置200之剖面圖,此裝置係用於檢查一晶圓W。Figure 3 shows a cross-sectional view of a device 200 having a platform unit 100 in Figure 1 for inspecting a wafer W.

請參閱第3圖,於本發明所列舉的一實施例中之用於檢查晶圓W之裝置200(以下稱之為檢查裝置)係可包括一腔室205、平台單元100與一探針卡單元250。Referring to FIG. 3, an apparatus 200 for inspecting a wafer W (hereinafter referred to as an inspection apparatus) in an embodiment of the present invention may include a chamber 205, a platform unit 100, and a probe card. Unit 250.

腔室205可包括一檢查空間220,晶圓W係於腔室205之檢查空間220中進行檢查。腔室205更可包括一裝載段部240與一檢查段部220,裝載段部240與檢查段部220係彼此之間係呈一線型之排列。一分隔壁254係可設置於裝載段部240與檢查段部220之間,並且晶圓W係可經由分隔壁254而於裝載段部240與檢查段部220之間進行移動。The chamber 205 can include an inspection space 220 in which the wafer W is inspected in the inspection space 220 of the chamber 205. The chamber 205 further includes a loading section 240 and an inspection section 220. The loading section 240 and the inspection section 220 are arranged in a line with each other. A partition wall 254 can be disposed between the loading section 240 and the inspection section 220, and the wafer W can be moved between the loading section 240 and the inspection section 220 via the partition wall 254.

裝載段部240係可將晶圓W裝載與對齊於晶圓夾頭110之上,並且裝載段部240係可對於晶圓夾頭110之上之晶圓W進行卸載。一頂開口222係可提供於腔室205之一頂部,並且一探針卡300(將於下文中詳述)係可設置於頂開口222之內。裝載段部240可包括一支承板242、一對齊器(未圖示)與一傳遞機器人(未圖示)。用以握持晶圓W之一晶圓卡匣係由支承板242所支承。對齊器係用以對於晶圓W進行對齊。傳遞機器人係用以將對齊後之晶圓W傳遞至平台單元100之上。The loading section 240 can load and align the wafer W over the wafer chuck 110, and the loading section 240 can unload the wafer W above the wafer chuck 110. A top opening 222 can be provided on top of one of the chambers 205, and a probe card 300 (described in more detail below) can be disposed within the top opening 222. The loading section 240 can include a support plate 242, an aligner (not shown), and a transfer robot (not shown). One of the wafer cassettes for holding the wafer W is supported by the support plate 242. The aligner is used to align the wafer W. The transfer robot is used to transfer the aligned wafer W onto the platform unit 100.

平台單元100係可定位於檢查空間220之中,並且準備於檢查裝置200之中進行檢查之晶圓W係可放置於平台單元100之上。當平台單元100係可於三方向進行移動時,位於晶圓W之上之複數晶片係可製作成具有探針卡300之電接點。The platform unit 100 can be positioned in the inspection space 220, and the wafer W to be inspected in the inspection apparatus 200 can be placed on the platform unit 100. When the platform unit 100 is movable in three directions, the plurality of wafers above the wafer W can be fabricated with electrical contacts having the probe card 300.

平台單元100係可於x方向、y方向、z方向上進行線性移動,並且藉由一驅動器170係可使得平台單元100可相對於其一中心軸而進行轉動。此外,平台單元100係可對於晶圓夾頭110之溫度進行控制,而晶圓W係定位於晶圓夾頭110之上。也就是說,平台單元100係可減少晶圓夾頭110之溫度,因而使得位於平台單元100之晶圓W是可於一低溫度檢查程序之一相對較低溫度下而進行檢查。相反地,平台單元100係可增加晶圓夾頭110之溫度,因而使得位於平台單元100之晶圓W是可於一高溫度檢查程序之一相對較高溫度下而進行檢查。The platform unit 100 is linearly movable in the x-direction, the y-direction, and the z-direction, and the platform unit 100 is rotatable relative to a central axis thereof by a driver 170. In addition, the platform unit 100 can control the temperature of the wafer chuck 110, and the wafer W is positioned above the wafer chuck 110. That is, the platform unit 100 can reduce the temperature of the wafer chuck 110, thereby allowing the wafer W at the platform unit 100 to be inspected at a relatively low temperature of one of the low temperature inspection procedures. Conversely, the platform unit 100 can increase the temperature of the wafer chuck 110, thereby allowing the wafer W at the platform unit 100 to be inspected at a relatively high temperature of one of the high temperature inspection procedures.

檢查裝置200中之平台單元100之結構於實質上係可相同於第1、2圖中之平台單元,因而以下便不再對於任何相關於平台單元100之詳細說明進行贅述。The structure of the platform unit 100 in the inspection apparatus 200 can be substantially the same as that of the platform unit in FIGS. 1 and 2, and thus the detailed description of the platform unit 100 will not be repeated below.

探針卡單元250係可被定位於平台單元100之頂部,並且探針卡300係可被握持於探針卡單元250之中。探針卡300係可包括一底面、一盤狀印刷電路板(PCB)與一探針頂端,其中,探針頂端係設置於底面。探針頂端係可凸出於底面且可朝向於晶圓夾頭110。位於晶圓W之上的複數晶片係可藉由探針卡300而製作成具有測試器之電接點。The probe card unit 250 can be positioned on top of the platform unit 100 and the probe card 300 can be held in the probe card unit 250. The probe card 300 can include a bottom surface, a disk-shaped printed circuit board (PCB) and a probe tip, wherein the probe tip is disposed on the bottom surface. The probe tip can protrude from the bottom surface and can face the wafer chuck 110. A plurality of wafers located above the wafer W can be fabricated by the probe card 300 as electrical contacts having a tester.

根據本發明所列舉的一實施例可知,當一檢查模式經由一低溫度檢查程序改變至一高溫度檢查程序時,位於一供給路線中之一殘留冷卻劑係可於供給路線中進行蒸發。因此,供給路線之內部壓力係會增加,並且可完全地避免液化冷卻劑流入一晶圓夾頭之中,藉此以減少晶圓夾頭之溫度變化且增加晶圓夾頭之溫度均勻性。According to an embodiment of the present invention, when an inspection mode is changed to a high temperature inspection program via a low temperature inspection program, a residual coolant in a supply path can be evaporated in the supply route. Therefore, the internal pressure of the supply route is increased, and the liquefied coolant can be completely prevented from flowing into a wafer chuck, thereby reducing the temperature variation of the wafer chuck and increasing the temperature uniformity of the wafer chuck.

上述係為所列舉實施例之說明,但這些實施例之說明並不會造成其本身的限制。雖然上述僅列舉出少部分的實施例,但於實質上在不脫離本發明之創新教導與優點下而仍可做更動與潤飾,這是任何熟習此項技藝者均可理解的。因此,針對任何更動與潤飾而言,本發明之保護範圍當視後附之申請專利範圍所界定者為準。於申請專利範圍中之功能性裝置語句係包含了於此所述之可執行上述功能之結構,並且於此除了提出結構相等物之外,亦提出了對等結構。因此,可以理解的是,雖然於上述說明中提出了各種列舉的實施例,但上述說明不因此而被解釋為限制於這些所揭露之特定實施例、所提出之修正例不受到所揭露實施例之限制,並且其它所列舉的實施例係被包含於後附之申請專利範圍之中。The above is a description of the illustrated embodiments, but the description of these embodiments does not impose its own limitations. Although only a few examples are set forth above, modifications and retouchings may be made without departing from the novel teachings and advantages of the present invention, as will be appreciated by those skilled in the art. Therefore, the scope of protection of the present invention is defined by the scope of the appended claims. The functional device statements in the scope of the claims include the structures described herein that perform the functions described above, and in addition to the structural equivalents, the equivalent structures are also proposed. Therefore, it is to be understood that the various embodiments of the invention have been described in the foregoing description The limitations and other enumerated embodiments are included in the scope of the appended claims.

100...平台單元100. . . Platform unit

110...晶圓夾頭110. . . Wafer chuck

115...流動路徑115. . . Flow path

120...儲存槽120. . . Storage tank

121...供給路線121. . . Supply route

123...排放路線123. . . Emission route

130...加熱塊130. . . Heating block

131...加熱線圈131. . . Heating coil

133...遮蔽板133. . . Masking board

140...控制器140. . . Controller

150...加熱元件150. . . Heating element

170...驅動器170. . . driver

200...檢查裝置200. . . Inspection device

205...腔室205. . . Chamber

222...頂開口222. . . Top opening

240...裝載段部240. . . Loading section

242...支承板242. . . Support plate

250...探針卡單元250. . . Probe card unit

254...分隔壁254. . . Partition wall

300...探針卡300. . . Probe card

t1...第一時間T1. . . first timing

T1...第三溫度T1. . . Third temperature

t2...第二時間T2. . . Second time

T2...第四溫度T2. . . Fourth temperature

W...晶圓W. . . Wafer

以下將配合所附圖式對於所列舉之實施例進行詳盡說明。第1至3圖表示非用以造成限制之實施例。The enumerated embodiments are described in detail below in conjunction with the drawings. Figures 1 through 3 show embodiments that are not intended to be limiting.

第1圖表示根據本發明之一實施例之用於一探針台之一平台單元之剖面圖;1 is a cross-sectional view showing a platform unit for a probe station in accordance with an embodiment of the present invention;

第2圖表示於第1圖中之平台單元之一加熱塊上之溫度與加熱時間之間的關係圖式;以及Figure 2 is a diagram showing the relationship between the temperature on the heating block of one of the platform units in Fig. 1 and the heating time;

第3圖表示於第1圖中之具有平台單元之一裝置之剖面圖,此裝置係用於檢查一晶圓。Figure 3 is a cross-sectional view of a device having a platform unit in Figure 1 for inspecting a wafer.

100...平台單元100. . . Platform unit

110...晶圓夾頭110. . . Wafer chuck

115...流動路徑115. . . Flow path

120...儲存槽120. . . Storage tank

121...供給路線121. . . Supply route

123...排放路線123. . . Emission route

130...加熱塊130. . . Heating block

131...加熱線圈131. . . Heating coil

133...遮蔽板133. . . Masking board

140...控制器140. . . Controller

150...加熱元件150. . . Heating element

W...晶圓W. . . Wafer

Claims (6)

一種平台單元,用於一探針台,該平台單元包括:一晶圓夾頭,一晶圓係用於定位於該晶圓夾頭之上,於該晶圓夾頭內包括一流動路徑;一管路路線,一冷卻劑係流經該管路路線而進入該晶圓夾頭,藉此將該晶圓夾頭冷卻至一第一溫度,該管路路線連接於該晶圓夾頭之該流動路徑,並且該管路路線包括一供給路線與一排放路線,該供給路線係將該冷卻劑供給至該晶圓夾頭,該排放路線係對於來自於該晶圓夾頭之該冷卻劑進行排放;一加熱元件,設置於該晶圓夾頭之中且用以對於該晶圓夾頭進行加熱;以及一加熱塊,定位鄰接於該晶圓夾頭,當該晶圓夾頭係經由該第一溫度而改變至一第二溫度時,該加熱塊係藉由熱量而對於殘留於該供給路線中之剩餘的該冷卻劑進行蒸發,該第二溫度係經該加熱元件而高於該第一溫度。 a platform unit for a probe station, the platform unit includes: a wafer chuck, a wafer is used for positioning on the wafer chuck, and a flow path is included in the wafer chuck; a pipeline route through which a coolant flows into the wafer chuck, thereby cooling the wafer chuck to a first temperature, the pipeline route being connected to the wafer chuck The flow path, and the pipeline route includes a supply route and a discharge route, the supply route is to supply the coolant to the wafer chuck, the discharge route is for the coolant from the wafer chuck Performing a discharge; a heating element disposed in the wafer chuck for heating the wafer chuck; and a heating block positioned adjacent to the wafer chuck when the wafer chuck is passed through When the first temperature is changed to a second temperature, the heating block evaporates the remaining coolant remaining in the supply route by heat, and the second temperature is higher than the heating element First temperature. 如申請專利範圍第1項所述之平台單元,其中,該加熱塊包括:一加熱線圈,對於鄰接於該晶圓夾頭之該供給路線進行圍繞且對於該供給路線進行加熱;以及一遮蔽板,對於該加熱線圈與該供給路線進行包覆,藉此以避免由該加熱線圈所產生的該熱量被向外傳遞至。 The platform unit of claim 1, wherein the heating block comprises: a heating coil surrounding the supply route adjacent to the wafer chuck and heating the supply route; and a shielding plate The heating coil is coated with the supply path, thereby preventing the heat generated by the heating coil from being transmitted to the outside. 如申請專利範圍第2項所述之平台單元,更包括一控制器,該控制器係用以控制該加熱塊之該加熱線圈,如 此可於一第一時間將該加熱塊加熱至一第三溫度且於該第一時間之一消逝之後可於一第二時間將該加熱塊降溫至低於該第三溫度之一第四溫度,而該晶圓夾頭係被加熱至該第二溫度,藉此以減少於該第三溫度時之該加熱塊所產生之該熱量所造成的熱損傷。 The platform unit of claim 2, further comprising a controller for controlling the heating coil of the heating block, such as The heating block may be heated to a third temperature at a first time and the heating block may be cooled to a fourth temperature lower than the third temperature at a second time after one of the first times elapses. And the wafer chuck is heated to the second temperature, thereby reducing thermal damage caused by the heat generated by the heating block at the third temperature. 一種晶圓檢查裝置,包括:一腔室,包括一檢查空間,該晶圓係於該腔室之該檢查空間中進行檢查;一平台單元,包括一晶圓夾頭、一管路路線、一加熱元件與一加熱塊,該晶圓夾頭內包括一流動路徑且對於該晶圓進行支承,一冷卻劑係流經該管路路線而進入該晶圓夾頭,藉此將該晶圓夾頭冷卻至一第一溫度,該管路路線係連接於該晶圓夾頭之該流動路徑且該管路路線包括一供給路線與一排放路線,該供給路線係將該冷卻劑供給至該晶圓夾頭,該排放路線係對於來自於該晶圓夾頭之該冷卻劑進行排放,該加熱元件係設置於該晶圓夾頭之中且用以對於該晶圓夾頭進行加熱,該加熱塊係定位鄰接於該晶圓夾頭,當該晶圓夾頭係經由該第一溫度而改變至一第二溫度時,該加熱塊係藉由熱量而對於殘留於該供給路線中之剩餘的該冷卻劑進行蒸發,該第二溫度係經該加熱元件而高於該第一溫度;以及一探針卡單元,設置有一探針卡,該探針卡係用以對於該晶圓進行檢查。 A wafer inspection apparatus includes: a chamber including an inspection space, the wafer being inspected in the inspection space of the chamber; a platform unit including a wafer chuck, a pipeline route, and a a heating element and a heating block, the wafer chuck includes a flow path for supporting the wafer, and a coolant flows through the pipeline path to enter the wafer chuck, thereby clamping the wafer Cooling the head to a first temperature, the pipeline route is connected to the flow path of the wafer chuck and the pipeline route includes a supply route and a discharge route, the supply route is to supply the coolant to the crystal a circular chuck that discharges the coolant from the wafer chuck, the heating element being disposed in the wafer chuck for heating the wafer chuck, the heating The block is positioned adjacent to the wafer chuck, and when the wafer chuck is changed to a second temperature via the first temperature, the heating block is retained by heat for remaining in the supply route The coolant is evaporated, the second temperature System through which the heating element is higher than the first temperature; and a probe card unit is provided with a probe card, the probe card for performing inspection system for the wafer. 如申請專利範圍第4項所述之晶圓檢查裝置,其 中,該加熱塊包括:一加熱線圈,對於鄰接於該晶圓夾頭之該供給路線進行圍繞且對於該供給路線進行加熱;以及一遮蔽板,對於該加熱線圈與該供給路線進行包覆,藉此以避免由該加熱線圈所產生的該熱量被向外傳遞至。 A wafer inspection apparatus according to claim 4, wherein The heating block includes: a heating coil surrounding the supply route adjacent to the wafer chuck and heating the supply route; and a shielding plate covering the heating coil and the supply route, Thereby, the heat generated by the heating coil is prevented from being transmitted to the outside. 如申請專利範圍第5項所述之晶圓檢查裝置,其中,該平台單元更包括一控制器,該控制器係用以控制該加熱塊之該加熱線圈,如此可於一第一時間將該加熱塊加熱至一第三溫度且於該第一時間之一消逝之後可於一第二時間將該加熱塊降溫至低於該第三溫度之一第四溫度,而該晶圓夾頭係被加熱至該第二溫度,藉此以減少於該第三溫度時之該加熱塊所產生之該熱量所造成的熱損傷。 The wafer inspection device of claim 5, wherein the platform unit further comprises a controller for controlling the heating coil of the heating block, so that the first time Heating the heating block to a third temperature and cooling the heating block to a fourth temperature lower than the third temperature at a second time after one of the first times elapses, and the wafer chuck is tied Heating to the second temperature, thereby reducing thermal damage caused by the heat generated by the heating block at the third temperature.
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