KR101905543B1 - The light emitting device package - Google Patents

Abstract

The present invention relates to a light emitting device package, comprising: a body including a cavity; first and second lead frames separated from each other in the cavity; at least one light emitting element disposed in the cavity; A light emitting device package comprising a molding material, an interfacial adhesion layer formed between the body and the molding material, and an injection port extending from the exterior to the bottom surface of the cavity, the injection port being embedded with the same material as the interfacial adhesion layer do. Therefore, when the primer before resin lamination is applied, the primer is prevented from being discharged to the light emitting chip or the wire, thereby preventing discoloration of the chip and the wire. Therefore, light absorption due to discoloration of the chip and the wire is prevented, thereby ensuring the amount of emitted light and compensating chromaticity deviation.

Description

[0001] The light emitting device package [0002]

The present invention relates to a light emitting device package.

Light emitting diodes (LEDs) can be made of a compound semiconductor material such as GaAs-based, AlGaAs-based, GaN-based, InGaN-based, and InGaAlP-based.

Such a light emitting diode is used as a light emitting device package that is packaged and emits various colors, and the light emitting device package is used as a light source in various fields such as a lighting indicator, a character indicator, and an image indicator.

The embodiment provides a light emitting device package having a new structure.

The embodiment provides a manufacturing method capable of improving the adhesive force between the body and the resin material.

An embodiment includes a body including a cavity, first and second lead frames separated from each other in the cavity, at least one light emitting element disposed in the cavity, a molding material for embedding the cavity, And an injection port extending from the exterior to the bottom surface of the cavity, wherein the injection port is embedded with the same material as the interfacial adhesion layer.

On the other hand, the embodiment includes a step of forming a plurality of first lead frames and a second lead frame, forming a body having a cavity and having an injection port penetrating from the exterior to the bottom surface of the cavity, The method comprising the steps of: mounting a light emitting device on a lead frame; injecting a needle into the injection port and applying an interface adhesive with the needle to form an interface adhesion layer on the bottom surface of the cavity; Emitting device package according to the present invention.

According to the embodiment, in the light emitting device package, it is possible to prevent discoloration of the chip and the wire by preventing the primer from being discharged to the light emitting chip or the wire when applying the primer before resin lamination. Therefore, light absorption due to discoloration of the chip and the wire is prevented, thereby ensuring the amount of emitted light and compensating chromaticity deviation.

In addition, by stably applying the primer to the bottom surface of the body, the adhesion between the body and the resin material is improved.

1 is a perspective view of a light emitting device package according to a first embodiment of the present invention.
2 is a cross-sectional view of the light emitting device package of FIG. 1 taken along line I-I '.
3 is a cross-sectional view of the light emitting diode of FIG.
4 to 8 are views showing a process of manufacturing the light emitting device package according to the first embodiment.
9 is a top view of a light emitting device package according to a second embodiment of the present invention.
10 is a cross-sectional view of a light emitting device package according to a third embodiment of the present invention.
11 is a cross-sectional view of a light emitting device package according to a fourth embodiment of the present invention.
12 is a cross-sectional view of a light emitting device package according to a fifth embodiment of the present invention.
13 is a cross-sectional view of a light emitting device package according to a sixth embodiment of the present invention.
14 is a view showing a display device including the light emitting device package of the present invention.
15 is a view showing an example of a lighting device including the light emitting device package of the present invention.

Hereinafter, embodiments of the present invention will be described in detail with reference to the accompanying drawings so that those skilled in the art can easily carry out the present invention. The present invention may, however, be embodied in many different forms and should not be construed as limited to the embodiments set forth herein.

Throughout the specification, when an element is referred to as "comprising ", it means that it can include other elements as well, without excluding other elements unless specifically stated otherwise.

In order to clearly illustrate the present invention in the drawings, thicknesses are enlarged in order to clearly illustrate various layers and regions, and parts not related to the description are omitted, and like parts are denoted by similar reference numerals throughout the specification .

In the description of the embodiments, it is to be understood that each layer (film), region, pattern or structure is formed "on" or "under" a substrate, each layer Quot; on "and " under" include both those that are "directly" or "indirectly" formed through another layer. In addition, the criteria for above or below each layer will be described with reference to the drawings.

Hereinafter, a light emitting device package according to a first embodiment of the present invention will be described with reference to FIGS. 1 to 3. FIG.

FIG. 1 is a top view of a light emitting device package according to a first embodiment of the present invention, FIG. 2 is a cross-sectional view of the light emitting device package of FIG. 1 taken along line I-I ' to be.

1 and 2, a light emitting device package 100 includes a body 110, a first lead frame 131 and a second lead frame 132, a plurality of light emitting devices 120, .

The body 110 may include at least one of a resin material such as polyphthalamide (PPA), a silicon (Si), a metal material, a photo sensitive glass (PSG), a sapphire (Al ₂ O ₃ ), a printed circuit board Can be formed. Preferably, the body 110 may be made of a resin material such as polyphthalamide (PPA).

The body 110 may be formed of a conductor having conductivity. When the body 110 is made of an electrically conductive material, an insulating layer (not shown) is formed on the surface of the body 110 so that the body 110 is electrically connected to the first lead frame 131 and the second lead frame 132 And can be configured to prevent electrical shorting. The perimeter shape of the body 110 viewed from above may have various shapes such as a triangular shape, a rectangular shape, a polygonal shape, and a circular shape depending on the use and design of the light emitting device package 100, .

An upper portion of the body 120 includes a cavity 115 and is a region where light is emitted.

The first lead frame 131 and the second lead frame 132 may be formed on the body 110. The first lead frame 131 and the second lead frame 132 may be electrically separated from the anode and the cathode to supply power to the light emitting device 120. According to the design of the light emitting device 120, a plurality of electrodes may be formed in addition to the first and second lead frames 131 and 132, but the present invention is not limited thereto.

The first and second lead frames 131 and 132 are separated from each other and exposed in the bottom surface of the cavity 115.

The first and second lead frames 131 and 132 may have a single-layer structure. For example, it may be formed of a metal or an alloy including at least one of Cu, Cr, Au, Al, Ag, Sn, Ni, Pt and Pd. The first and second lead frames 131 and 132 may have a multi-layer structure. For example, the first and second lead frames 131 and 132 may be formed of a Ti / Cu / Ni / Au layer in which titanium (Ti), copper (Cu), nickel (Ni) But it is not limited to this.

That is, a material having excellent adhesion to the body such as titanium (Ti), chromium (Cr), and tantalum (Ta) is laminated on the lowermost layer of the first and second lead frames 131 and 132, A wire or the like such as gold is easily attached to the uppermost layers of the first and second lead frames 131 and 132 and the first and second lead frames 131 and 132, A diffusion barrier layer formed of platinum (Pt), nickel (Ni), copper (Cu), or the like may be stacked between the uppermost layer and the lowermost layer of the lower electrode 132, but the present invention is not limited thereto.

The first and second lead frames 131 and 132 are electrically connected to a wire 121 as a conductive connecting member so that the first and second lead frames 131 and 132 are electrically connected to the light emitting device 120 .

In order to distinguish the first and second lead frames 131 and 132 without confusion, a cathode mark may be formed on the body 110, but the present invention is not limited thereto.

The light emitting device 120 may selectively emit light in the ultraviolet band to a wavelength range of the visible light band, emit light of the same peak wavelength, or emit light of different peak wavelength. The light emitting device 120 may include at least one of an LED chip using a Group III-V compound semiconductor such as an ultraviolet (UV) LED chip, a blue LED chip, a green LED chip, a white LED chip, and a red LED chip .

The light emitting device 120 may be directly mounted on the body 110 or may be electrically connected to the first and second lead frames 131 and 132.

The light emitting device 120 can be mounted by selectively using wire bonding, die bonding, and flip bonding. The bonding method can be changed depending on the chip type and the electrode position of the chip.

 The light emitting device 120 may selectively include a semiconductor light emitting device manufactured using a semiconductor of a group III-V element compound semiconductor such as AlInGaN, InGaN, GaN, GaAs, InGaP, AllnGaP, InP, or InGaAs have.

As shown in FIG. 2, the light emitting device 120 is attached to the first and second lead frames 131 and 132 by a conductive adhesive, and electrically connected to the first and second lead frames 131 and 132 by wires 121 .

The light emitting device 120 is called a vertical light emitting device and includes a conductive supporting substrate 21, a bonding layer 23, a second conductive semiconductor layer 25, an active layer 27, And a conductive type semiconductor layer (29).

 The conductive support substrate 21 may be formed of a metal or an electrically conductive semiconductor substrate.

 The group III-V nitride semiconductor layer is formed on the substrate 21, and the growth equipment of the semiconductor includes an electron beam evaporator, physical vapor deposition (PVD), chemical vapor deposition (CVD), plasma laser deposition (PLD) For example, a dual-type thermal evaporator, sputtering, metal organic chemical vapor deposition (MOCVD), and the like.

 A bonding layer 23 may be formed on the conductive supporting substrate 21. The bonding layer 23 bonds the conductive support substrate 21 and the nitride semiconductor layer. In addition, the conductive supporting substrate 21 may be formed by a plating method instead of a bonding method. In this case, the bonding layer 23 may not be formed.

 The second conductivity type semiconductor layer 25 is formed on the bonding layer 23 and the second conductivity type semiconductor layer 25 is electrically connected to the first electrode 31.

 The second conductivity type semiconductor layer 25 may be formed of at least one of Group III-V compound semiconductor such as GaN, InN, AlN, InGaN, AlGaN, InAlGaN, and AlInN. The second conductivity type semiconductor layer 25 may be doped with a second conductivity type dopant, and the second conductivity type dopant may be a p type dopant including Mg, Zn, Ca, Sr, and Ba.

 The second conductivity type semiconductor layer 25 may be formed of a p-type GaN layer having a predetermined thickness by supplying a gas including a p-type dopant such as NH3, TMGa (or TEGa), and Mg.

 The second conductivity type semiconductor layer 25 includes a current spreading structure in a predetermined region. The current diffusion structure includes semiconductor layers having a higher current diffusion speed in the horizontal direction than the current diffusion speed in the vertical direction.

 The current diffusion structure may include, for example, semiconductor layers having a dopant concentration or a difference in conductivity.

 The second conductivity type semiconductor layer 25 can be supplied with a carrier diffused in a uniform distribution to another layer on the second conductivity type semiconductor layer 25, for example, the active layer 27.

 An active layer 27 is formed on the second conductivity type semiconductor layer 25. The active layer 27 may be formed as a single quantum well or a multiple quantum well (MQW) structure. One period of the active layer 27 may selectively include a period of InGaN / GaN, a period of AlGaN / InGaN, a period of InGaN / InGaN, or a period of AlGaN / GaN.

 A second conductive clad layer (not shown) may be formed between the second conductive semiconductor layer 25 and the active layer 27. The second conductivity type cladding layer may be formed of a p-type GaN-based semiconductor. The second conductivity type cladding layer may be formed of a material having a band gap higher than the energy band gap of the well layer.

 The first conductive semiconductor layer 29 is formed on the active layer 27. The first conductive semiconductor layer 29 may be an n-type semiconductor layer doped with a first conductive dopant. The n-type semiconductor layer may be made of any one of compound semiconductors such as GaN, InN, AlN, InGaN, AlGaN, InAlGaN, and AlInN. The first conductivity type dopant is an n-type dopant, and at least one of Si, Ge, Sn, Se, and Te can be added.

 The first conductivity type semiconductor layer 29 can be formed by supplying a gas containing an n-type dopant such as NH3, TMGa (or TEGa), and Si to an n-type GaN layer of a predetermined thickness.

The second conductivity type semiconductor layer 25 may be a p-type semiconductor layer, and the first conductivity type semiconductor layer 29 may be an n-type semiconductor layer. The light emitting structure may be implemented by any one of an n-p junction structure, a p-n junction structure, an n-p-n junction structure, and a p-n-p junction structure. Hereinafter, the uppermost layer of the semiconductor layer will be described as an example of the first conductivity type semiconductor layer 29 for the description of the embodiments.

A first electrode and / or an electrode layer (not shown) may be formed on the first conductive semiconductor layer 29. The electrode layer may be formed of an oxide or nitride-based light-transmitting layer such as indium tin oxide (ITO), indium tin oxide nitride (ITON), indium zinc oxide (IZO), indium zinc oxide nitride (IZON) (indium aluminum zinc oxide), IGZO (indium gallium zinc oxide), IGTO (indium gallium tin oxide), AZO (aluminum zinc oxide), ATO (antimony tin oxide), GZO (gallium zinc oxide), IrO x, RuO x, NiO. ≪ / RTI > The electrode layer can function as a current diffusion layer capable of diffusing a current.

The electrode layer may be a reflective electrode layer and the reflective electrode layer may be formed of a material consisting of Ag, Ni, Al, Rh, Pd, Ir, Ru, Mg, Zn, Pt, Au, . For example, the metal layer may be formed of at least one of Ag, Ni, Al, Rh, Pd, Ir, Ru, Mg, Zn, Pt, Au, and Hf or an alloy thereof. .

A plurality of the light emitting devices 120 may be mounted on the first and second lead frames 131 and 132, respectively.

And a molding material 170 for filling the cavity 115 in the cavity 115.

The molding material 170 is formed of a light transmitting material and is formed up to the upper portion of the body 110.

The molding material 170 has a structure in which phosphors are dispersed in a translucent resin. The phosphors vary the wavelength of light emitted from the light emitting device 120 and emit light of different wavelengths.

For example, when the light emitting element 120 is a blue light emitting diode and the phosphor is a yellow phosphor, the yellow phosphor may be excited by blue light to generate white light. When the light emitting device 120 emits ultraviolet rays (UV), phosphors of three colors of red, green, and blue are added to realize white light.

At this time, an interface adhesion layer 160 is formed at a boundary between the side surface of the cavity 115 of the body 110 and the bottom surface and the molding material 170.

The interfacial adhesion layer 160 is for maintaining the heat resistance property while increasing the adhesive strength between the body 110 and the molding material 170. The body 110 includes SiO ₂ and the molding material 170 When the substrate is made of polyphthalamide (PPA), the interface adhesion layer 160 may be formed of a silane-based primer.

At this time, the body 110 is provided with an injection port 114 for applying the interfacial adhesion layer 160 to the bottom surface.

The injection port 114 is formed by connecting the bottom surface of the cavity 115 from the top surface of the body 110 and may be curved in a curved shape as shown in FIG.

The injection port 114 may surround the cavity 115 and the injection port 114 may be filled with a material forming the interface adhesion layer 160.

Hereinafter, the manufacturing method of the first embodiment will be described with reference to FIGS. 4 to 8. FIG.

First, as shown in FIG. 4, a body 110 is formed on a substrate having lead frames 131 and 132 formed thereon.

The body 110 may be formed by disposing a substrate in which lead frames 131 and 132 are formed in a metal mold and injecting a material for forming the body 110 into the metal mold.

At this time, a protrusion 112 is formed between the first and second lead frames 131 and 132.

A mold frame may be formed in the body 110 so that the injection port 114 is formed in the body 110. Alternatively, the body 110 may be formed without the injection port 114 and then the injection port 114 may be physically formed through a punch or the like have.

Next, as shown in FIG. 5, the light emitting device 120 is mounted on the first lead frame 131, and then the wire 121 is bonded.

Next, as shown in FIG. 6, an interface adhesive is flowed along the side surface of the cavity 115 to form an interface adhesion layer 160 on the side surface.

When the interfacial adhesion layer 160 is formed of a silane-based primer, it is cured by flowing along the side surface of the cavity 115 due to natural curing.

Meanwhile, a needle 180 for injecting an interface adhesive into the injection port 114 is inserted. When the needle 180 is exposed to the end of the injection port 114, that is, the bottom surface of the cavity 115, the interfacial adhesive is flowed through the needle 180 so that the interfacial adhesion layer 160 is formed on the bottom surface of the cavity 115. .

The interfacial adhesion layer 160 formed on the bottom surface of the cavity 115 flows to the protrusion 112 and naturally cures to form the interfacial adhesion layer 160 on the bottom surface of the cavity 115 uniformly.

Therefore, the interfacial adhesive flowing along the bottom surface is formed only on the bottom surface of the wire 121 or the light emitting device 120 without being partially adhered thereto, so that discoloration of the wire 121 or the light emitting device 120 can be prevented.

Next, when the needle 180 is removed to the outside as shown in FIG. 7, the interface adhesive is simultaneously flowed. Therefore, the needle 180 is removed while the injection port 114 is filled with the interface adhesive by natural curing of the interface adhesive.

Therefore, the injection port 114 may be filled with an interface adhesive so that moisture or contaminants from the outside can be prevented from penetrating through the injection port 114.

Next, as shown in FIG. 8, a molding material 170 is injected onto the interfacial adhesion layer 160 and cured to complete the light emitting device package 100 of FIG.

The interfacial adhesion layer 160 is formed between the body 110 and the molding material 170 so that the adhesion between the body 110 and the molding material 170 is strengthened, It is possible to prevent the moisture from penetrating into the photoreceptor.

Hereinafter, another embodiment will be described with reference to Figs.

The light emitting device package 100A of FIG. 9 includes a body 110, a first lead frame 131 and a second lead frame 132 having a cavity 240, a light emitting element 120, And a wire 121.

Description of the same configuration as that of the first embodiment will be omitted.

In this case, the light emitting device package 100A may be formed in a straight line, in which the injection port 114A connects the bottom surface of the cavity 115 from the upper surface of the body 110. [

At this time, the inclination angle? Of the injection port 114 may be smaller than the inclination angle of the side surface of the cavity 115.

Referring to FIGS. 10 to 12, the light emitting device packages 100B, 100C, and 100D according to the third to fifth embodiments are similar to the light emitting device packages 100B, 100C, and 100D of the first embodiment in that the body 110, the first lead frame 131, A lead frame 132, a light emitting element 120, and a wire 122.

In this case, the injection port 114B of FIG. 10 may be formed to have a first inclination angle from the upper surface of the body 110, have an inflection point, and have a second inclination angle to extend to the bottom surface of the cavity 115.

Here, the first inclination angle may be greater than the second inclination angle, and the first inclination angle may be the same as the side inclination angle of the cavity 115.

2 may be formed in a curved shape as shown in FIG. 2. The width t1 of one end of the injection port 114 on the upper surface of the body may be the width of the other end of the injection port 114C on the bottom surface of the cavity 115 (t2). At this time, the width t2 of the other end may be larger than the width of the needle 180.

12 is not formed on the upper surface of the body 110 but is formed toward the bottom surface of the cavity 115 from the side surface of the body 110. [

That is, the injection port 114D is formed between the body 110 and the lead frames 131 and 132, and may be formed parallel to the bottom surface of the cavity 115, or may have an inclination.

13 shows a light emitting device package according to a sixth embodiment of the present invention.

The light emitting device package 100E according to the sixth embodiment includes the body 110, the first lead frame 131 and the second lead frame 132, the light emitting device 120, and the wires 122 ).

At this time, the first lead frame and the second lead frame 134, 135 include an injection port 114E.

The injection port 114E is opened from the side surfaces of the lead frames 134 and 135 and is exposed through the bottom surface of the cavity 115. The injection port 114E is filled with an interfacial adhesive as in the first embodiment . At this time, the injection port 114E may be a groove formed on the surfaces of the lead frames 134 and 135, and the groove may be embedded by an interfacial adhesive.

The light emitting device package according to the embodiment can be applied to a light unit. The light unit includes a structure in which a plurality of light emitting device packages are arrayed, and includes the display device shown in Fig. 14, the illumination device shown in Fig. 15, and the light unit such as an illumination lamp, a traffic light, a vehicle headlight, Can be applied.

14 is an exploded perspective view of the display device according to the embodiment.

14, a display device 1000 includes a light guide plate 1041, a light emitting module 1031 for providing light to the light guide plate 1041, a reflection member 1022 under the light guide plate 1041, An optical sheet 1051 on the light guide plate 1041, a display panel 1061 on the optical sheet 1051, and a bottom cover 1011 for storing the light guide plate 1041, the light emitting module 1031 and the reflecting member 1022 , But is not limited thereto.

The bottom cover 1011, the reflective sheet 1022, the light guide plate 1041, and the optical sheet 1051 can be defined as a light unit 1050.

The light guide plate 1041 diffuses the light from the light emitting module 1031 to convert the light into a surface light source. The light guide plate 1041 may be made of a transparent material such as acrylic resin such as polymethyl methacrylate (PET), polyethylene terephthalate (PET), polycarbonate (PC), cycloolefin copolymer (COC), and polyethylene naphthalate Resin. ≪ / RTI >

The light emitting module 1031 is disposed on at least one side of the light guide plate 1041 to provide light to at least one side of the light guide plate 1041 and ultimately to serve as a light source of the display device.

The light emitting module 1031 may include at least one light source, and may provide light directly or indirectly from one side of the light guide plate 1041. The light emitting module 1031 includes a substrate 1033 and a light emitting device package 100 according to the embodiment described above. The light emitting device package 100 may be arrayed on the substrate 1033 at predetermined intervals. have. The substrate may be, but is not limited to, a printed circuit board. The substrate 1033 may include a metal core PCB (MCPCB), a flexible PCB (FPCB), or the like, but is not limited thereto. When the light emitting device package 100 is mounted on the side surface of the bottom cover 1011 or on the heat radiation plate, the substrate 1033 can be removed. A part of the heat radiation plate may be in contact with the upper surface of the bottom cover 1011. Therefore, heat generated in the light emitting device package 100 can be emitted to the bottom cover 1011 via the heat dissipation plate.

The plurality of light emitting device packages 100 may be mounted on the substrate 1033 such that the light emitting surface of the light emitting device package 100 is spaced apart from the light guiding plate 1041 by a predetermined distance. The light emitting device package 100 may directly or indirectly provide light to the light-incident portion, which is one side of the light guide plate 1041, but is not limited thereto.

The reflective member 1022 may be disposed under the light guide plate 1041. The reflective member 1022 reflects the light incident on the lower surface of the light guide plate 1041 and supplies the reflected light to the display panel 1061 to improve the brightness of the display panel 1061. The reflective member 1022 may be formed of, for example, PET, PC, or PVC resin, but is not limited thereto. The reflective member 1022 may be an upper surface of the bottom cover 1011, but is not limited thereto.

The bottom cover 1011 may house the light guide plate 1041, the light emitting module 1031, the reflective member 1022, and the like. To this end, the bottom cover 1011 may be provided with a housing portion 1012 having a box-like shape with an opened upper surface, but the present invention is not limited thereto. The bottom cover 1011 may be coupled to a top cover (not shown), but is not limited thereto.

The bottom cover 1011 may be formed of a metal material or a resin material, and may be manufactured using a process such as press molding or extrusion molding. In addition, the bottom cover 1011 may include a metal or a non-metal material having good thermal conductivity, but the present invention is not limited thereto.

The display panel 1061 is, for example, an LCD panel, including first and second transparent substrates facing each other, and a liquid crystal layer interposed between the first and second substrates. A polarizing plate may be attached to at least one surface of the display panel 1061, but the present invention is not limited thereto. The display panel 1061 transmits or blocks light provided from the light emitting module 1031 to display information. The display device 1000 can be applied to video display devices such as portable terminals, monitors of notebook computers, monitors of laptop computers, and televisions.

The optical sheet 1051 is disposed between the display panel 1061 and the light guide plate 1041 and includes at least one light-transmitting sheet. The optical sheet 1051 may include at least one of a sheet such as a diffusion sheet, a horizontal / vertical prism sheet, a brightness enhanced sheet, and the like. The diffusion sheet diffuses incident light, and the horizontal and / or vertical prism sheet concentrates incident light on the display panel 1061. The brightness enhancing sheet reuses the lost light to improve the brightness I will. A protective sheet may be disposed on the display panel 1061, but the present invention is not limited thereto.

The optical path of the light emitting module 1031 may include the light guide plate 1041 and the optical sheet 1051 as an optical member, but the present invention is not limited thereto.

15 is a perspective view of a lighting apparatus according to an embodiment.

15, the lighting apparatus 1500 includes a case 1510, a light emitting module 1530 installed in the case 1510, a connection terminal (not shown) installed in the case 1510 and supplied with power from an external power source 1520).

The case 1510 is preferably formed of a material having a good heat dissipation property, and may be formed of, for example, a metal material or a resin material.

The light emitting module 1530 may include a substrate 1532 and a light emitting device package 100 mounted on the substrate 1532. A plurality of the light emitting device packages 100 may be arrayed in a matrix or at a predetermined interval.

The substrate 1532 may be a circuit pattern printed on an insulator. For example, the substrate 1532 may be a printed circuit board (PCB), a metal core PCB, a flexible PCB, a ceramic PCB, FR-4 substrate, and the like.

In addition, the substrate 1532 may be formed of a material that efficiently reflects light, or may be a coating layer such as a white color, a silver color, or the like whose surface is efficiently reflected by light.

At least one light emitting device package 100 may be mounted on the substrate 1532. Each of the light emitting device packages 100 may include at least one LED (Light Emitting Diode) chip. The LED chip may include a light emitting diode in a visible light band such as red, green, blue or white, or a UV light emitting diode that emits ultraviolet (UV) light.

The light emitting module 1530 may be arranged to have a combination of various light emitting device packages 100 to obtain color and brightness. For example, a white light emitting diode, a red light emitting diode, and a green light emitting diode may be arranged in combination in order to secure a high color rendering index (CRI).

The connection terminal 1520 may be electrically connected to the light emitting module 1530 to supply power. The connection terminal 1520 is connected to the external power source by being inserted in a socket manner, but the present invention is not limited thereto. For example, the connection terminal 1520 may be formed in a pin shape and inserted into an external power source or may be connected to an external power source through wiring.

While the present invention has been particularly shown and described with reference to exemplary embodiments thereof, it is to be understood that the invention is not limited to the disclosed exemplary embodiments, It belongs to the scope of right.

The light emitting device packages 100, 100A, 100B, 100C, 100D, and 100E
The light emitting element 120
The body 110
Inlet 114, 114A-114E
Interfacial adhesion layer 160

Claims (10)

A body including a cavity,
First and second lead frames separated from each other in the cavity,
At least one light emitting element disposed in the cavity,
A molding material for filling the cavity,
An interfacial adhesion layer disposed between the body and the molding material, and
An injection hole extending from the outside to the bottom surface of the cavity
/ RTI >
Wherein the injection hole is filled with the same material as the interfacial adhesion layer. The method according to claim 1,
Wherein the interface adhesion layer comprises a silane-based primer. The method according to claim 1,
Wherein the injection port is formed in the body. The method of claim 3,
Wherein the injection port passes through the body and connects the bottom surface of the cavity to the upper surface of the body. 5. The method of claim 4,
Wherein the injection port is curved toward a bottom surface of the body. 5. The method of claim 4,
Wherein the injection port penetrates through the body and connects the bottom surface of the cavity to the top surface of the body to form a straight line. The method according to claim 6,
The inclination angle of the injection port is smaller than the inclination angle of the side surface of the cavity, 5. The method of claim 4,
Wherein the injection port has a width varying from an upper surface of the body to a bottom surface of the cavity. The method according to claim 1,
Wherein the injection port is formed between the body and the first and second lead frames. The method according to claim 1,
And the injection port is formed in the first and second lead frames.

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