KR101895178B1 - Semiconductor device manufacturing method - Google Patents

Semiconductor device manufacturing method Download PDF

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KR101895178B1
KR101895178B1 KR1020177002261A KR20177002261A KR101895178B1 KR 101895178 B1 KR101895178 B1 KR 101895178B1 KR 1020177002261 A KR1020177002261 A KR 1020177002261A KR 20177002261 A KR20177002261 A KR 20177002261A KR 101895178 B1 KR101895178 B1 KR 101895178B1
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film
concave portion
back surface
substrate
semiconductor device
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KR20170016511A (en
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미사토 히사노
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미쓰비시덴키 가부시키가이샤
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Abstract

Si 기판(1)의 이면에 n형 불순물을 주입하여 n형층(3)을 형성한다. Si 기판(1)의 이면에는 오목부(4)가 형성되어 있다. n형층(3)을 형성한 후에 이면 위와 오목부(4) 내에 산화막(5)을 형성한다. 오목부(4) 내의 보호막을 남기면서 이면 위의 산화막(5)을 제거한다. 산화막(5)을 제거한 후에 이면 위에 Al-Si막(6)을 형성한다. Al-Si막(6) 위에 금속 전극(7)을 형성한다. 계속하여, 본 실시의 형태의 효과를 비교예와 비교하여 설명한다. 오목부(4) 내의 산화막(5)은, Al-Si막(6)으로부터 오목부(4)를 통해서 Si 기판(1)으로 Al이 확산되는 것을 막는다.An n-type impurity is implanted into the back surface of the Si substrate 1 to form an n-type layer 3. On the back surface of the Si substrate 1, a concave portion 4 is formed. After the n-type layer 3 is formed, an oxide film 5 is formed on the back surface and in the concave portion 4. The oxide film 5 on the back surface is removed while leaving the protective film in the concave portion 4. After the oxide film 5 is removed, an Al-Si film 6 is formed on the back surface. A metal electrode 7 is formed on the Al-Si film 6. Subsequently, the effects of the present embodiment will be described in comparison with comparative examples. The oxide film 5 in the concave portion 4 prevents Al from diffusing from the Al-Si film 6 to the Si substrate 1 through the concave portion 4.

Description

반도체 장치의 제조 방법{SEMICONDUCTOR DEVICE MANUFACTURING METHOD}Technical Field [0001] The present invention relates to a semiconductor device manufacturing method,

본 발명은, Si 기판의 이면에 금속 전극을 형성하는 반도체 장치의 제조 방법에 관한 것이다.The present invention relates to a method of manufacturing a semiconductor device in which a metal electrode is formed on the back surface of a Si substrate.

큰 전류를 구동시키기 위한 전력용 반도체 장치에 있어서 Si 기판의 이면에 금속 전극을 형성한다(예컨대, 특허 문헌 1 참조). Si 기판과 금속 전극의 박리를 억제하기 위해 양쪽의 사이에 Al-Si막을 형성한다.A metal electrode is formed on the back surface of a Si substrate in a power semiconductor device for driving a large current (for example, see Patent Document 1). An Al-Si film is formed between the Si substrate and the metal electrode in order to suppress the peeling of the Si substrate and the metal electrode.

(선행 기술 문헌)(Prior art document)

(특허 문헌)(Patent Literature)

(특허 문헌 1) 일본 특허 공개 2006-074024호 공보(Patent Document 1) Japanese Unexamined Patent Application Publication No. 2006-074024

웨이퍼 제조시의 기계적 스트레스에 의해 Si 기판의 이면에 오목부가 형성된다. 이 오목부를 통해서 Al-Si막으로부터 Si 기판으로 Al이 확산되어 p형층이 형성된다. 이 p형층에 공핍층이 도달하기 때문에, 리크 전류가 발생하고, 디바이스의 내압이 열화한다고 하는 문제가 있었다.A concave portion is formed on the back surface of the Si substrate due to mechanical stress during wafer production. Al is diffused from the Al-Si film to the Si substrate through this concave portion to form a p-type layer. A depletion layer reaches the p-type layer, so that a leakage current is generated and the internal pressure of the device is deteriorated.

본 발명은, 상술한 바와 같은 과제를 해결하기 위해 이루어진 것으로, 그 목적은 Si 기판의 이면에 오목부가 존재하더라도 리크 전류와 내압 열화를 억제할 수 있는 반도체 장치의 제조 방법을 얻는 것이다.SUMMARY OF THE INVENTION The present invention has been made to solve the above problems, and an object of the present invention is to obtain a semiconductor device manufacturing method capable of suppressing leakage current and breakdown voltage breakdown even if a concave portion exists on the back surface of the Si substrate.

본 발명과 관련되는 반도체 장치는, 오목부가 형성된 이면을 갖는 Si 기판의 상기 이면에 n형 불순물을 주입하여 n형층을 형성하는 공정과, 상기 n형층을 형성한 후에 상기 이면 위와 상기 오목부 내에 보호막을 형성하는 공정과, 상기 오목부 내의 상기 보호막을 남기면서 상기 이면 위의 상기 보호막을 제거하는 공정과, 상기 보호막을 제거한 후에 상기 이면 위에 Al-Si막을 형성하는 공정과, 상기 Al-Si막 위에 금속 전극을 형성하는 공정을 구비하고, 상기 오목부 내의 상기 보호막은, 상기 Al-Si막으로부터 상기 오목부를 통해서 상기 Si 기판으로 Al이 확산되는 것을 막는 것을 특징으로 한다.A semiconductor device according to the present invention includes the steps of forming an n-type layer by implanting n-type impurity into the back surface of an Si substrate having a back surface with a concave portion formed thereon, and forming a protective film Removing the protective film on the back surface while leaving the protective film in the concave portion; forming an Al-Si film on the back surface after removing the protective film; Wherein the protective film in the recess prevents diffusion of Al from the Al-Si film to the Si substrate through the recessed portion.

본 발명에서는, 오목부 내의 보호막이 Al-Si막으로부터 오목부를 통해서 Si 기판으로 Al이 확산되는 것을 막는다. 따라서, Si 기판의 이면에 오목부가 존재하더라도 리크 전류와 내압 열화를 억제할 수 있다.In the present invention, the protective film in the concave portion prevents Al from diffusing from the Al-Si film to the Si substrate through the concave portion. Therefore, even when the concave portion exists on the back surface of the Si substrate, the leakage current and the breakdown voltage can be suppressed.

도 1은 본 발명의 실시의 형태 1과 관련되는 반도체 장치의 제조 방법을 나타내는 단면도이다.
도 2는 본 발명의 실시의 형태 1과 관련되는 반도체 장치의 제조 방법을 나타내는 단면도이다.
도 3은 본 발명의 실시의 형태 1과 관련되는 반도체 장치의 제조 방법을 나타내는 단면도이다.
도 4는 본 발명의 실시의 형태 1과 관련되는 반도체 장치의 제조 방법을 나타내는 단면도이다.
도 5는 비교예와 관련되는 반도체 장치의 제조 방법을 나타내는 단면도이다.
도 6은 본 발명의 실시의 형태 2와 관련되는 반도체 장치의 제조 방법을 나타내는 단면도이다.
도 7은 본 발명의 실시의 형태 3과 관련되는 반도체 장치의 제조 방법을 나타내는 단면도이다.
도 8은 본 발명의 실시의 형태 4와 관련되는 반도체 장치의 제조 방법을 나타내는 단면도이다.
도 9는 본 발명의 실시의 형태 5와 관련되는 반도체 장치의 제조 방법을 나타내는 단면도이다.
도 10은 본 발명의 실시의 형태 6과 관련되는 반도체 장치의 제조 방법을 나타내는 단면도이다.
도 11은 본 발명의 실시의 형태 6과 관련되는 반도체 장치의 제조 방법을 나타내는 단면도이다.
도 12는 본 발명의 실시의 형태 6과 관련되는 반도체 장치의 제조 방법의 변형예를 나타내는 단면도이다.1 is a cross-sectional view showing a method of manufacturing a semiconductor device according to a first embodiment of the present invention.
2 is a cross-sectional view showing a method of manufacturing a semiconductor device according to Embodiment 1 of the present invention.
3 is a cross-sectional view showing a manufacturing method of a semiconductor device according to Embodiment 1 of the present invention.
4 is a cross-sectional view showing a manufacturing method of a semiconductor device according to Embodiment 1 of the present invention.
5 is a cross-sectional view showing a manufacturing method of a semiconductor device according to a comparative example.
6 is a cross-sectional view showing a manufacturing method of a semiconductor device according to a second embodiment of the present invention.
7 is a cross-sectional view showing a method of manufacturing a semiconductor device according to a third embodiment of the present invention.
8 is a cross-sectional view showing a method of manufacturing a semiconductor device according to Embodiment 4 of the present invention.
9 is a cross-sectional view showing a manufacturing method of a semiconductor device according to Embodiment 5 of the present invention.
10 is a cross-sectional view showing a manufacturing method of a semiconductor device according to a sixth embodiment of the present invention.
11 is a cross-sectional view showing a manufacturing method of a semiconductor device according to a sixth embodiment of the present invention.
12 is a cross-sectional view showing a modification of the semiconductor device manufacturing method according to the sixth embodiment of the present invention.

본 발명의 실시의 형태와 관련되는 반도체 장치의 제조 방법에 대하여 도면을 참조하여 설명한다. 동일한 또는 대응하는 구성 요소에는 동일한 부호를 붙이고, 설명의 반복을 생략하는 경우가 있다.A method of manufacturing a semiconductor device according to an embodiment of the present invention will be described with reference to the drawings. The same or corresponding components are denoted by the same reference numerals and repetitive descriptions may be omitted.

실시의 형태 1.Embodiment Mode 1.

본 발명의 실시의 형태 1과 관련되는 반도체 장치의 제조 방법에 대하여 도면을 참조하면서 설명한다. 도 1~4는 본 발명의 실시의 형태 1과 관련되는 반도체 장치의 제조 방법을 나타내는 단면도이다.A semiconductor device manufacturing method according to a first embodiment of the present invention will be described with reference to the drawings. 1 to 4 are cross-sectional views showing a manufacturing method of a semiconductor device according to a first embodiment of the present invention.

우선, 도 1에 나타내는 바와 같이, n-형의 Si 기판(1)의 표면에 p형 불순물을 주입하여 p형층(2)을 형성하고, 이면에 n형 불순물을 주입하여 n형층(3)을 형성한다. Si 기판(1)의 이면에는 오목부(4)(흠)가 형성되어 있다. 다음으로, 도 2에 나타내는 바와 같이, 이면 위와 오목부(4) 내에 산화막(5)을 형성한다. 다음으로, 도 3에 나타내는 바와 같이, 스퍼터 에칭에 의해 오목부(4) 내의 산화막(5)을 남기면서 이면 위의 산화막(5)을 제거한다. 여기서, 산화막(5)은 적어도 오목부(4)의 최심부에 남아 있을 필요가 있다. 다음으로, 도 4에 나타내는 바와 같이, 이면 위에 Al-Si막(6)을 형성한다. 다음으로, Al-Si막(6) 위에 금속 전극(7)을 형성한다. 또, 금속 전극(7)은 다층 전극이다.1, a p-type impurity is implanted into the surface of an n-type Si substrate 1 to form a p-type layer 2, and an n-type impurity is implanted into the back surface of the n- . On the back surface of the Si substrate 1, a concave portion 4 (flaw) is formed. Next, as shown in Fig. 2, an oxide film 5 is formed on the back surface and the concave portion 4. Next, as shown in Fig. 3, the oxide film 5 on the back surface is removed while leaving the oxide film 5 in the concave portion 4 by sputter etching. Here, the oxide film 5 needs to remain at least in the deepest portion of the concave portion 4. Next, as shown in Fig. 4, an Al-Si film 6 is formed on the back surface. Next, a metal electrode 7 is formed on the Al-Si film 6. The metal electrode 7 is a multilayer electrode.

계속하여, 본 실시의 형태의 효과를 비교예와 비교하여 설명한다. 도 5는 비교예와 관련되는 반도체 장치의 제조 방법을 나타내는 단면도이다. 비교예에서는 오목부(4)의 최심부에 있어서 Si 기판(1)에 직접 Al-Si막(6)이 접한다. 이 때문에, 디바이스에 역방향의 전압을 인가했을 때에 Al-Si막(6)으로부터 오목부(4)를 통해서 Si 기판(1)으로 Al이 확산되어 p형층이 형성된다. 이 p형층에 공핍층이 도달하기 때문에, 리크 전류가 발생하고, 디바이스의 내압이 열화한다.Subsequently, the effects of the present embodiment will be described in comparison with comparative examples. 5 is a cross-sectional view showing a manufacturing method of a semiconductor device according to a comparative example. In the comparative example, the Al-Si film 6 is directly in contact with the Si substrate 1 at the deepest portion of the concave portion 4. Therefore, when a reverse voltage is applied to the device, Al is diffused from the Al-Si film 6 to the Si substrate 1 through the concave portion 4 to form a p-type layer. Since the depletion layer reaches the p-type layer, a leak current is generated and the breakdown voltage of the device deteriorates.

한편, 본 실시의 형태에서는, 오목부(4) 내의 산화막(5)이 Al-Si막(6)으로부터 오목부(4)를 통해서 Si 기판(1)으로 Al이 확산되는 것을 막는 보호막으로서 기능한다. 따라서, Si 기판(1)의 이면에 오목부(4)가 존재하더라도 리크 전류와 내압 열화를 억제할 수 있다. 또한, Al-Si막(6)에 의해 Si 기판(1)과 금속 전극(7)의 박리를 억제할 수 있다.On the other hand, in the present embodiment, the oxide film 5 in the concave portion 4 functions as a protective film for preventing diffusion of Al from the Al-Si film 6 to the Si substrate 1 through the concave portion 4 . Therefore, even if the concave portion 4 is present on the back surface of the Si substrate 1, it is possible to suppress the leak current and the breakdown voltage breakdown. Further, the Al-Si film 6 can suppress the peeling between the Si substrate 1 and the metal electrode 7. [

실시의 형태 2.Embodiment 2:

도 6은 본 발명의 실시의 형태 2와 관련되는 반도체 장치의 제조 방법을 나타내는 단면도이다. 본 실시의 형태에서는, 실시의 형태 1의 산화막(5) 대신에 보호막으로서 n형 도핑 폴리실리콘(8)을 형성한다. 이 경우, 오목부(4) 내의 n형 도핑 폴리실리콘(8)이 Al-Si막(6)으로부터 오목부(4)를 통해서 Si 기판(1)으로 Al이 확산되는 것을 막기 때문에, 실시의 형태 1과 마찬가지의 효과를 얻을 수 있다. 또한, n형 도핑 폴리실리콘(8)은 n형이므로, Si 기판(1)을 p형으로 활성화시키는 Al에 대하여 마진이 있고, 오목부(4)에서도 통전할 수 있다.6 is a cross-sectional view showing a manufacturing method of a semiconductor device according to a second embodiment of the present invention. In this embodiment mode, an n-type doped polysilicon 8 is formed as a protective film in place of the oxide film 5 of the first embodiment. In this case, since the n-type doped polysilicon 8 in the concave portion 4 prevents Al from diffusing from the Al-Si film 6 to the Si substrate 1 through the concave portion 4, The same effect as in (1) can be obtained. Further, since the n-type doped polysilicon 8 is n-type, there is a margin for Al which activates the Si substrate 1 to the p-type, and it is possible to conduct electricity also in the recessed portion 4.

실시의 형태 3.Embodiment 3

도 7은 본 발명의 실시의 형태 3과 관련되는 반도체 장치의 제조 방법을 나타내는 단면도이다. 본 실시의 형태에서는, 실시의 형태 1의 산화막(5) 대신에 보호막으로서 인화산화막 유리(9)를 형성한다. 이 경우에도 실시의 형태 1과 마찬가지의 효과를 얻을 수 있다. 또한, 인화산화막 유리(9)는 n형이므로, 실시의 형태 2와 마찬가지로, Si 기판(1)을 p형으로 활성화시키는 Al에 대하여 마진이 있고, 오목부(4)에서도 통전할 수 있다.7 is a cross-sectional view showing a method of manufacturing a semiconductor device according to a third embodiment of the present invention. In this embodiment mode, instead of the oxide film 5 of the first embodiment, a phosphorus oxide film glass 9 is formed as a protective film. In this case, the same effect as that of the first embodiment can be obtained. Since the phosphorus oxide film glass 9 is n-type, there is a margin for Al which activates the Si substrate 1 in p-type in the same manner as in Embodiment Mode 2, and electricity can also be conducted in the recessed portion 4.

실시의 형태 4.Embodiment 4.

도 8은 본 발명의 실시의 형태 4와 관련되는 반도체 장치의 제조 방법을 나타내는 단면도이다. 본 실시의 형태에서는, 실시의 형태 1의 산화막(5) 대신에 보호막으로서 실리사이드화하지 않는 단체(單體) 메탈(10)(티탄)을 형성한다. 오목부(4) 내의 단체 메탈(10)은 Al의 확산을 막는 배리어 메탈로서 작용하기 때문에, 실시의 형태 1과 마찬가지의 효과를 얻을 수 있다. 또한, 단체 메탈(10)은 n형에 대한 저항 특성(ohmic characteristic)이 우수하다.8 is a cross-sectional view showing a method of manufacturing a semiconductor device according to Embodiment 4 of the present invention. In this embodiment, a single metal (10) (titanium) which is not silicided is formed as a protective film in place of the oxide film (5) of the first embodiment. Since the single metal 10 in the concave portion 4 acts as a barrier metal for preventing the diffusion of Al, the same effect as in the first embodiment can be obtained. In addition, the single metal 10 has excellent ohmic characteristics for the n-type.

실시의 형태 5Embodiment 5

도 9는 본 발명의 실시의 형태 5와 관련되는 반도체 장치의 제조 방법을 나타내는 단면도이다. 본 실시의 형태에서는, n형층(3)을 형성한 후에 이면 위와 오목부(4) 내에 금속막(티탄, 코발트, 텅스텐, 몰리브덴)을 형성한다. 그 후에, 어닐을 실시하는 것에 의해, 금속 실리사이드(11)(티탄 실리사이드, 코발트 실리사이드, 텅스텐 실리사이드, 몰리브덴 실리사이드)를 형성한다. 다음으로, 스퍼터 에칭에 의해 오목부(4) 내의 금속 실리사이드(11)를 남기면서 이면 위의 금속 실리사이드(11)를 제거한다. 그 후, 실시의 형태 1과 마찬가지로 Al-Si막(6)과 금속 전극(7)을 형성한다.9 is a cross-sectional view showing a manufacturing method of a semiconductor device according to Embodiment 5 of the present invention. In the present embodiment, a metal film (titanium, cobalt, tungsten, or molybdenum) is formed on the back surface and the concave portion 4 after the n-type layer 3 is formed. Thereafter, the metal silicide 11 (titanium silicide, cobalt silicide, tungsten silicide, molybdenum silicide) is formed by annealing. Next, the metal silicide 11 on the back surface is removed while leaving the metal silicide 11 in the concave portion 4 by sputter etching. Thereafter, similarly to the first embodiment, the Al-Si film 6 and the metal electrode 7 are formed.

오목부(4) 내의 금속 실리사이드(11)가 Al-Si막(6)으로부터 오목부(4)를 통해서 Si 기판(1)으로 Al이 확산되는 것을 막는 보호막으로서 기능하기 때문에, 실시의 형태 1과 마찬가지의 효과를 얻을 수 있다. 또한, 금속 실리사이드(11)는 단체 메탈(10)보다 n형의 n형층(3)에 대한 저항 특성이 우수하고, Al의 확산을 막는 배리어 메탈로서 작용한다.Since the metal silicide 11 in the concave portion 4 functions as a protective film for preventing Al from diffusing from the Al-Si film 6 to the Si substrate 1 through the concave portion 4, The same effect can be obtained. Further, the metal silicide 11 has better resistance characteristics to the n-type layer 3 than the single metal 10, and acts as a barrier metal for preventing diffusion of Al.

실시의 형태 6Embodiment 6

도 10, 11은 본 발명의 실시의 형태 6과 관련되는 반도체 장치의 제조 방법을 나타내는 단면도이다. 우선, 실시의 형태 1의 도 1과 마찬가지로 n-형의 Si 기판(1)의 표면에 p형 불순물을 주입하여 p형층(2)을 형성하고, 이면에 n형 불순물을 주입하여 n형층(3)을 형성한다. Si 기판(1)의 이면에는 오목부(4)가 형성되어 있다. 다음으로, 도 10에 나타내는 바와 같이, 이면에 레이저 어닐을 실시하여 오목부(4)를 남긴 채로 이면을 재결정화하고, n형층(3)을 재형성한다. 다음으로, 도 11에 나타내는 바와 같이, 이면 위에 Al-Si막(6)을 형성한다. Al-Si막(6) 위에 금속 전극(7)을 형성한다.10 and 11 are cross-sectional views showing a manufacturing method of a semiconductor device according to a sixth embodiment of the present invention. 1, a p-type impurity is implanted into the surface of an n-type Si substrate 1 to form a p-type layer 2, and an n-type impurity is implanted into the back surface of the n- ). On the back surface of the Si substrate 1, a concave portion 4 is formed. Next, as shown in Fig. 10, the back surface is subjected to laser annealing to recrystallize the back surface while leaving the concave portion 4, and the n-type layer 3 is again formed. Next, as shown in Fig. 11, an Al-Si film 6 is formed on the back surface. A metal electrode 7 is formed on the Al-Si film 6.

이것에 의해 Al-Si막(6)으로부터 오목부(4)를 통해서 Si 기판(1)으로 Al이 확산되는 것을 막을 수 있기 때문에, 실시의 형태 1과 마찬가지의 효과를 얻을 수 있다. 또한, n형층(3)을 재형성할 수 있기 때문에, 특성 변화를 억제할 수 있다. 또한, 레이저 조사로 이면을 용융시켜 오목부(4)를 소실시키는 방법에서는 처리 시간이 길어지지만, 본 실시의 형태에서는 오목부(4)를 남김으로써 레이저 어닐의 처리 시간을 짧게 할 수 있기 때문에, 비용을 저감할 수 있다.As a result, diffusion of Al from the Al-Si film 6 to the Si substrate 1 through the concave portion 4 can be prevented, and therefore, the same effect as in the first embodiment can be obtained. In addition, since the n-type layer 3 can be re-formed, characteristic changes can be suppressed. In addition, in the method of melting the back surface and burning the concave portion 4 by laser irradiation, the processing time becomes longer. In this embodiment, however, the processing time of the laser annealing can be shortened by leaving the concave portion 4, The cost can be reduced.

도 12는 본 발명의 실시의 형태 6과 관련되는 반도체 장치의 제조 방법의 변형예를 나타내는 단면도이다. 레이저 어닐을 오목부(4)에만 선택적으로 실시한다. 이것에 의해, 오목부(4) 부근을 재결정화할 수 있기 때문에, 실시의 형태 6의 효과를 얻을 수 있다. 또한, 레이저 어닐을 선택적으로 실시함으로써, 레이저 어닐의 처리 시간을 더 단축할 수 있기 때문에, 비용을 저감할 수 있다.12 is a cross-sectional view showing a modification of the semiconductor device manufacturing method according to the sixth embodiment of the present invention. Laser annealing is selectively performed only on the concave portion 4. [ As a result, the vicinity of the concave portion 4 can be recrystallized, so that the effect of the sixth embodiment can be obtained. Further, by selectively performing laser annealing, the processing time of the laser annealing can be further shortened, so that the cost can be reduced.

1 : Si 기판
3 : n형층
4 : 오목부
5 : 산화막
6 : Al-Si막
7 : 금속 전극
8 : n형 도핑 폴리실리콘
9 : 인화산화막 유리
10 : 단체 메탈
11 : 금속 실리사이드1: Si substrate
3: n-type layer
4:
5: oxide film
6: Al-Si film
7: Metal electrode
8: n-type doped polysilicon
9: Phosphor oxide glass
10: Group Metal
11: metal silicide

Claims (7)

오목부가 형성된 이면을 갖는 Si 기판의 상기 이면에 n형 불순물을 주입하여 n형층을 형성하는 공정과,
상기 n형층을 형성한 후에 상기 이면 위와 상기 오목부 내에 보호막을 형성하는 공정과,
상기 오목부 내의 상기 보호막을 남기면서 상기 이면 위의 상기 보호막을 제거하는 공정과,
상기 보호막을 제거한 후에 상기 이면 위에 Al-Si막을 형성하는 공정과,
상기 Al-Si막 위에 금속 전극을 형성하는 공정
을 구비하고,
상기 오목부 내의 상기 보호막은, 상기 Al-Si막으로부터 상기 오목부를 통해서 상기 Si 기판으로 Al이 확산되는 것을 막는
것을 특징으로 하는 반도체 장치의 제조 방법.
A step of forming an n-type layer by implanting n-type impurity into the back surface of the Si substrate having the recessed back side formed thereon,
Forming a protective film on the back surface and the concave portion after forming the n-type layer;
Removing the protective film on the back surface while leaving the protective film in the concave portion;
A step of forming an Al-Si film on the back surface after removing the protective film,
A step of forming a metal electrode on the Al-Si film
And,
The protective film in the concave portion is a film which prevents Al from diffusing from the Al-Si film to the Si substrate through the concave portion
Wherein the semiconductor device is a semiconductor device.
제 1 항에 있어서,
상기 보호막은 산화막인 것을 특징으로 하는 반도체 장치의 제조 방법.
The method according to claim 1,
Wherein the protective film is an oxide film.
제 1 항에 있어서,
상기 보호막은 n형 도핑 폴리실리콘 또는 인화산화막 유리인 것을 특징으로 하는 반도체 장치의 제조 방법.
The method according to claim 1,
Wherein the protective film is an n-type doped polysilicon or a phosphorus oxide glass.
제 1 항에 있어서,
상기 보호막은 실리사이드화하지 않는 메탈인 것을 특징으로 하는 반도체 장치의 제조 방법.
The method according to claim 1,
Wherein the protective film is a metal which is not silicided.
제 1 항에 있어서,
상기 보호막은 금속 실리사이드인 것을 특징으로 하는 반도체 장치의 제조 방법.
The method according to claim 1,
Wherein the protective film is a metal silicide.
오목부가 형성된 이면을 갖는 Si 기판의 상기 이면에 n형 불순물을 주입하여 n형층을 형성하는 공정과,
상기 이면에 레이저 어닐을 실시하여 상기 오목부를 남긴 채로 상기 이면을 재결정화하고, 상기 n형층을 재형성하는 공정과,
상기 레이저 어닐의 후에 상기 이면 위에 Al-Si막을 형성하는 공정과,
상기 Al-Si막 위에 금속 전극을 형성하는 공정
을 구비하는 것을 특징으로 하는 반도체 장치의 제조 방법.
A step of forming an n-type layer by implanting n-type impurity into the back surface of the Si substrate having the recessed back side formed thereon,
A step of performing laser annealing on the back surface to recrystallize the back surface while leaving the concave portion to remodel the n-type layer,
Forming an Al-Si film on the back surface after the laser annealing;
A step of forming a metal electrode on the Al-Si film
And forming a second insulating film on the semiconductor substrate.
제 6 항에 있어서,
상기 레이저 어닐을 상기 오목부에 선택적으로 실시하는 것을 특징으로 하는 반도체 장치의 제조 방법.The method according to claim 6,
And the laser annealing is selectively performed on the concave portion.
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