KR101894691B1 - 복합 기판의 형성 및 복합 기판 상 ⅲ-ⅴ족 발광 장치 성장 방법 - Google Patents

복합 기판의 형성 및 복합 기판 상 ⅲ-ⅴ족 발광 장치 성장 방법 Download PDF

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KR101894691B1
KR101894691B1 KR1020177027208A KR20177027208A KR101894691B1 KR 101894691 B1 KR101894691 B1 KR 101894691B1 KR 1020177027208 A KR1020177027208 A KR 1020177027208A KR 20177027208 A KR20177027208 A KR 20177027208A KR 101894691 B1 KR101894691 B1 KR 101894691B1
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substrate
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KR20170122790A (ko
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나탄 에프. 가드너
마이클 알. 크라메스
멜빈 비. 맥로린
성수 이
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코닌클리케 필립스 엔.브이.
루미레즈 엘엘씨
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/817—Bodies characterised by the crystal structures or orientations, e.g. polycrystalline, amorphous or porous
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/20—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of semiconductor or other solid state devices
    • H01L25/03—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10D, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes
    • H01L25/04—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10D, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/075—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10D, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H10H20/00
    • H01L25/0753—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10D, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H10H20/00 the devices being arranged next to each other
    • H01L33/007—
    • H01L33/02—
    • H01L33/30—
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/011—Manufacture or treatment of bodies, e.g. forming semiconductor layers
    • H10H20/013—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials
    • H10H20/0133—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials with a substrate not being Group III-V materials
    • H10H20/01335—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials with a substrate not being Group III-V materials the light-emitting regions comprising nitride materials
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    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/822—Materials of the light-emitting regions
    • H10H20/824—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/822—Materials of the light-emitting regions
    • H10H20/824—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP
    • H10H20/825—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP containing nitrogen, e.g. GaN
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/851—Wavelength conversion means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02436—Intermediate layers between substrates and deposited layers
    • H01L21/02439—Materials
    • H01L21/02455—Group 13/15 materials
    • H01L21/02458—Nitrides

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  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Led Devices (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
KR1020177027208A 2010-01-15 2011-01-10 복합 기판의 형성 및 복합 기판 상 ⅲ-ⅴ족 발광 장치 성장 방법 Expired - Fee Related KR101894691B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US12/688,382 2010-01-15
US12/688,382 US8105852B2 (en) 2010-01-15 2010-01-15 Method of forming a composite substrate and growing a III-V light emitting device over the composite substrate
PCT/IB2011/050096 WO2011086494A1 (en) 2010-01-15 2011-01-10 Method of forming a composite substrate and growing a iii-v light emitting device over the composite substrate

Related Parent Applications (1)

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KR1020127021362A Division KR101783796B1 (ko) 2010-01-15 2011-01-10 복합 기판의 형성 및 복합 기판 상 ⅲ-ⅴ족 발광 장치 성장 방법

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KR20170122790A KR20170122790A (ko) 2017-11-06
KR101894691B1 true KR101894691B1 (ko) 2018-09-04

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KR1020177027208A Expired - Fee Related KR101894691B1 (ko) 2010-01-15 2011-01-10 복합 기판의 형성 및 복합 기판 상 ⅲ-ⅴ족 발광 장치 성장 방법
KR1020127021362A Expired - Fee Related KR101783796B1 (ko) 2010-01-15 2011-01-10 복합 기판의 형성 및 복합 기판 상 ⅲ-ⅴ족 발광 장치 성장 방법

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Country Link
US (1) US8105852B2 (enExample)
EP (1) EP2524400B1 (enExample)
JP (1) JP5727514B2 (enExample)
KR (2) KR101894691B1 (enExample)
CN (1) CN102696120B (enExample)
TW (1) TWI523256B (enExample)
WO (1) WO2011086494A1 (enExample)

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JP2529686Y2 (ja) 1987-02-13 1997-03-19 富士電機株式会社 自動販売機の搬出機構識別装置
US8247886B1 (en) 2009-03-09 2012-08-21 Soraa, Inc. Polarization direction of optical devices using selected spatial configurations
US9583678B2 (en) 2009-09-18 2017-02-28 Soraa, Inc. High-performance LED fabrication
US10147850B1 (en) 2010-02-03 2018-12-04 Soraa, Inc. System and method for providing color light sources in proximity to predetermined wavelength conversion structures
US8536022B2 (en) * 2010-05-19 2013-09-17 Koninklijke Philips N.V. Method of growing composite substrate using a relaxed strained layer
US9450143B2 (en) * 2010-06-18 2016-09-20 Soraa, Inc. Gallium and nitrogen containing triangular or diamond-shaped configuration for optical devices
US8686461B2 (en) 2011-01-03 2014-04-01 SemiLEDs Optoelectronics Co., Ltd. Light emitting diode (LED) die having stepped substrates and method of fabrication
US8786053B2 (en) 2011-01-24 2014-07-22 Soraa, Inc. Gallium-nitride-on-handle substrate materials and devices and method of manufacture
US8686431B2 (en) 2011-08-22 2014-04-01 Soraa, Inc. Gallium and nitrogen containing trilateral configuration for optical devices
US9646827B1 (en) 2011-08-23 2017-05-09 Soraa, Inc. Method for smoothing surface of a substrate containing gallium and nitrogen
US9978904B2 (en) 2012-10-16 2018-05-22 Soraa, Inc. Indium gallium nitride light emitting devices
US8994033B2 (en) 2013-07-09 2015-03-31 Soraa, Inc. Contacts for an n-type gallium and nitrogen substrate for optical devices
US9419189B1 (en) 2013-11-04 2016-08-16 Soraa, Inc. Small LED source with high brightness and high efficiency
CN105244423B (zh) * 2015-10-30 2018-11-20 漳州立达信光电子科技有限公司 无衬底led芯片的封装方法及无衬底led芯片
US10756235B2 (en) 2017-03-09 2020-08-25 Enkris Semiconductor, Inc Stripped method for preparing semiconductor structure
DE102019004261A1 (de) * 2019-06-18 2020-12-24 lnfineon Technologies AG Verfahren zum Bearbeiten einer Substratanordnung und Wafer-Verbundstruktur
CN110600435A (zh) * 2019-09-05 2019-12-20 方天琦 多层复合基板结构及其制备方法
GB2586862B (en) 2019-09-06 2021-12-15 Plessey Semiconductors Ltd LED precursor incorporating strain relaxing structure
GB2593693B (en) * 2020-03-30 2022-08-03 Plessey Semiconductors Ltd LED precursor

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US6265289B1 (en) * 1998-06-10 2001-07-24 North Carolina State University Methods of fabricating gallium nitride semiconductor layers by lateral growth from sidewalls into trenches, and gallium nitride semiconductor structures fabricated thereby
US6177688B1 (en) * 1998-11-24 2001-01-23 North Carolina State University Pendeoepitaxial gallium nitride semiconductor layers on silcon carbide substrates
US6261929B1 (en) * 2000-02-24 2001-07-17 North Carolina State University Methods of forming a plurality of semiconductor layers using spaced trench arrays
FR2817394B1 (fr) * 2000-11-27 2003-10-31 Soitec Silicon On Insulator Procede de fabrication d'un substrat notamment pour l'optique, l'electronique ou l'optoelectronique et substrat obtenu par ce procede
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Also Published As

Publication number Publication date
TWI523256B (zh) 2016-02-21
EP2524400B1 (en) 2018-12-19
TW201143132A (en) 2011-12-01
KR20120114357A (ko) 2012-10-16
EP2524400A1 (en) 2012-11-21
US8105852B2 (en) 2012-01-31
JP2013517622A (ja) 2013-05-16
KR101783796B1 (ko) 2017-10-10
JP5727514B2 (ja) 2015-06-03
KR20170122790A (ko) 2017-11-06
CN102696120B (zh) 2015-11-25
CN102696120A (zh) 2012-09-26
US20110177631A1 (en) 2011-07-21
WO2011086494A1 (en) 2011-07-21

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