KR101889762B1 - 갈륨 잉크, 그의 제조방법 및 사용방법 - Google Patents

갈륨 잉크, 그의 제조방법 및 사용방법 Download PDF

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Publication number
KR101889762B1
KR101889762B1 KR1020120016330A KR20120016330A KR101889762B1 KR 101889762 B1 KR101889762 B1 KR 101889762B1 KR 1020120016330 A KR1020120016330 A KR 1020120016330A KR 20120016330 A KR20120016330 A KR 20120016330A KR 101889762 B1 KR101889762 B1 KR 101889762B1
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KR
South Korea
Prior art keywords
gallium
alkyl group
substituted
liquid carrier
ink
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
KR1020120016330A
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English (en)
Korean (ko)
Other versions
KR20120095319A (ko
Inventor
데이비드 모슬리
데이비드 토센
Original Assignee
롬 앤드 하스 일렉트로닉 머트어리얼즈 엘엘씨
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Publication of KR20120095319A publication Critical patent/KR20120095319A/ko
Application granted granted Critical
Publication of KR101889762B1 publication Critical patent/KR101889762B1/ko
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Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05D—PROCESSES FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05D3/00—Pretreatment of surfaces to which liquids or other fluent materials are to be applied; After-treatment of applied coatings, e.g. intermediate treating of an applied coating preparatory to subsequent applications of liquids or other fluent materials
    • B05D3/02—Pretreatment of surfaces to which liquids or other fluent materials are to be applied; After-treatment of applied coatings, e.g. intermediate treating of an applied coating preparatory to subsequent applications of liquids or other fluent materials by baking
    • B05D3/0254—After-treatment
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09D—COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
    • C09D11/00—Inks
    • C09D11/52—Electrically conductive inks
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05D—PROCESSES FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05D3/00—Pretreatment of surfaces to which liquids or other fluent materials are to be applied; After-treatment of applied coatings, e.g. intermediate treating of an applied coating preparatory to subsequent applications of liquids or other fluent materials
    • B05D3/02—Pretreatment of surfaces to which liquids or other fluent materials are to be applied; After-treatment of applied coatings, e.g. intermediate treating of an applied coating preparatory to subsequent applications of liquids or other fluent materials by baking
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P52/00—Grinding, lapping or polishing of wafers, substrates or parts of devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/26—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using liquid deposition
    • H10P14/265—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using liquid deposition using solutions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/32—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by intermediate layers between substrates and deposited layers
    • H10P14/3202—Materials thereof
    • H10P14/3241—Materials thereof being conductive materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3402—Deposited materials, e.g. layers characterised by the chemical composition
    • H10P14/3436—Deposited materials, e.g. layers characterised by the chemical composition being chalcogenide semiconductor materials not being oxides, e.g. ternary compounds
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/541—CuInSe2 material PV cells

Landscapes

  • Chemical & Material Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Wood Science & Technology (AREA)
  • Organic Chemistry (AREA)
  • Inks, Pencil-Leads, Or Crayons (AREA)
  • Photovoltaic Devices (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
  • Recrystallisation Techniques (AREA)
  • Chemically Coating (AREA)
KR1020120016330A 2011-02-18 2012-02-17 갈륨 잉크, 그의 제조방법 및 사용방법 Expired - Fee Related KR101889762B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US13/030,171 2011-02-18
US13/030,171 US8372485B2 (en) 2011-02-18 2011-02-18 Gallium ink and methods of making and using same

Publications (2)

Publication Number Publication Date
KR20120095319A KR20120095319A (ko) 2012-08-28
KR101889762B1 true KR101889762B1 (ko) 2018-08-20

Family

ID=46605119

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020120016330A Expired - Fee Related KR101889762B1 (ko) 2011-02-18 2012-02-17 갈륨 잉크, 그의 제조방법 및 사용방법

Country Status (7)

Country Link
US (2) US8372485B2 (enExample)
JP (1) JP6058895B2 (enExample)
KR (1) KR101889762B1 (enExample)
CN (1) CN102643570B (enExample)
DE (1) DE102012003205A1 (enExample)
FR (1) FR2971786B1 (enExample)
TW (1) TWI490281B (enExample)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8343267B2 (en) * 2011-02-18 2013-01-01 Rohm And Haas Electronic Materials Llc Gallium formulated ink and methods of making and using same
US8372485B2 (en) * 2011-02-18 2013-02-12 Rohm And Haas Electronic Materials Llc Gallium ink and methods of making and using same
TWI496735B (zh) * 2011-03-23 2015-08-21 Nat Univ Tsing Hua 氮化物奈米材料之製備方法
JP6099472B2 (ja) * 2013-04-26 2017-03-22 Ｄｏｗａエレクトロニクス株式会社 金属ナノ粒子分散体、金属ナノ粒子分散体の製造方法および接合方法
CN103819963B (zh) * 2014-02-28 2016-02-10 惠州市立美特环保油墨有限公司 一种uv无苯光油及其制备方法
US11706874B2 (en) 2019-08-06 2023-07-18 Microsoft Technology Licensing, Llc Electronic-circuit printing using low-cost ink

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2011029624A (ja) 2009-07-16 2011-02-10 Rohm & Haas Electronic Materials Llc セレンインク、並びにその製造方法および使用方法

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DE3101892A1 (de) * 1981-01-22 1982-08-26 Röhm GmbH, 6100 Darmstadt Verfahren zur herstellung von waessrigen kunststoffdispersionen mit hohem pigmentbindevermoegen
WO1993004212A1 (en) 1991-08-26 1993-03-04 Eastman Kodak Company Preparation of group iii element-group vi element compound films
GB9315771D0 (en) 1993-07-30 1993-09-15 Epichem Ltd Method of depositing thin metal films
US5539038A (en) * 1994-10-03 1996-07-23 Rexham Graphics, Inc. Ink jet ink and process for making same
US6126740A (en) 1995-09-29 2000-10-03 Midwest Research Institute Solution synthesis of mixed-metal chalcogenide nanoparticles and spray deposition of precursor films
GB9711799D0 (en) 1997-06-07 1997-08-06 Vecht Aron Preparation of sulphides and selenides
JP2000026775A (ja) * 1998-07-10 2000-01-25 Kao Corp 水系インク
US7524528B2 (en) 2001-10-05 2009-04-28 Cabot Corporation Precursor compositions and methods for the deposition of passive electrical components on a substrate
JP2003173826A (ja) * 2001-12-05 2003-06-20 Mitsubishi Paper Mills Ltd 半導体電極の作製方法、並びにそれを用いた光電変換素子
US6875661B2 (en) 2003-07-10 2005-04-05 International Business Machines Corporation Solution deposition of chalcogenide films
US7663057B2 (en) 2004-02-19 2010-02-16 Nanosolar, Inc. Solution-based fabrication of photovoltaic cell
US7494841B2 (en) 2006-05-12 2009-02-24 International Business Machines Corporation Solution-based deposition process for metal chalcogenides
US20100029036A1 (en) 2006-06-12 2010-02-04 Robinson Matthew R Thin-film devices formed from solid group iiia particles
US8057850B2 (en) 2006-11-09 2011-11-15 Alliance For Sustainable Energy, Llc Formation of copper-indium-selenide and/or copper-indium-gallium-selenide films from indium selenide and copper selenide precursors
EP2101931B1 (en) 2006-11-09 2015-05-13 Alliance for Sustainable Energy, LLC Precursors for formation of copper selenide, indium selenide, copper indium diselenide, and/or copper indium gallium diselenide films
WO2008095146A2 (en) 2007-01-31 2008-08-07 Van Duren Jeroen K J Solar cell absorber layer formed from metal ion precursors
WO2008129250A2 (en) * 2007-04-18 2008-10-30 Nanoco Technologies Limited Fabrication of electrically active films based on multiple layers
KR101144807B1 (ko) * 2007-09-18 2012-05-11 엘지전자 주식회사 태양전지 박막조성용 잉크와 그 제조방법, 이를 이용한ｃｉｇｓ 박막형 태양전지, 및 그 제조 방법
CN101870458B (zh) * 2009-04-22 2012-05-09 钟润文 多元金属硫族元素化合物和靶材及涂层材料的制备方法
US8071875B2 (en) * 2009-09-15 2011-12-06 Xiao-Chang Charles Li Manufacture of thin solar cells based on ink printing technology
JP2011129564A (ja) * 2009-12-15 2011-06-30 Fujifilm Corp 光電変換半導体膜を形成する塗布膜及びその製造方法、光電変換半導体膜、光電変換素子、及び太陽電池
US8282995B2 (en) * 2010-09-30 2012-10-09 Rohm And Haas Electronic Materials Llc Selenium/group 1b/group 3a ink and methods of making and using same
JP2014502052A (ja) * 2010-12-03 2014-01-23 イー・アイ・デュポン・ドウ・ヌムール・アンド・カンパニー 硫化／セレン化銅インジウムガリウムコーティングおよび膜を製造するためのインクおよび方法
US8343267B2 (en) * 2011-02-18 2013-01-01 Rohm And Haas Electronic Materials Llc Gallium formulated ink and methods of making and using same
US8372485B2 (en) * 2011-02-18 2013-02-12 Rohm And Haas Electronic Materials Llc Gallium ink and methods of making and using same

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2011029624A (ja) 2009-07-16 2011-02-10 Rohm & Haas Electronic Materials Llc セレンインク、並びにその製造方法および使用方法

Also Published As

Publication number Publication date
US20120214292A1 (en) 2012-08-23
FR2971786A1 (fr) 2012-08-24
US20130122205A1 (en) 2013-05-16
FR2971786B1 (fr) 2013-05-10
DE102012003205A1 (de) 2012-08-23
KR20120095319A (ko) 2012-08-28
CN102643570A (zh) 2012-08-22
JP6058895B2 (ja) 2017-01-11
US8372485B2 (en) 2013-02-12
US8673401B2 (en) 2014-03-18
JP2012178560A (ja) 2012-09-13
CN102643570B (zh) 2014-10-29
TWI490281B (zh) 2015-07-01
TW201241111A (en) 2012-10-16

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