KR101882126B1 - 전류 센서 - Google Patents

전류 센서 Download PDF

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Publication number
KR101882126B1
KR101882126B1 KR1020167036165A KR20167036165A KR101882126B1 KR 101882126 B1 KR101882126 B1 KR 101882126B1 KR 1020167036165 A KR1020167036165 A KR 1020167036165A KR 20167036165 A KR20167036165 A KR 20167036165A KR 101882126 B1 KR101882126 B1 KR 101882126B1
Authority
KR
South Korea
Prior art keywords
current sensor
sensor
current
Prior art date
Application number
KR1020167036165A
Other languages
English (en)
Other versions
KR20170008864A (ko
Inventor
요스께 고이와
도시노리 다까쯔까
히데또 이마조
겐지 스즈끼
Original Assignee
아사히 가세이 일렉트로닉스 가부시끼가이샤
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 아사히 가세이 일렉트로닉스 가부시끼가이샤 filed Critical 아사히 가세이 일렉트로닉스 가부시끼가이샤
Publication of KR20170008864A publication Critical patent/KR20170008864A/ko
Application granted granted Critical
Publication of KR101882126B1 publication Critical patent/KR101882126B1/ko

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Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R15/00—Details of measuring arrangements of the types provided for in groups G01R17/00 - G01R29/00, G01R33/00 - G01R33/26 or G01R35/00
    • G01R15/14—Adaptations providing voltage or current isolation, e.g. for high-voltage or high-current networks
    • G01R15/20—Adaptations providing voltage or current isolation, e.g. for high-voltage or high-current networks using galvano-magnetic devices, e.g. Hall-effect devices, i.e. measuring a magnetic field via the interaction between a current and a magnetic field, e.g. magneto resistive or Hall effect devices
    • G01R15/207—Constructional details independent of the type of device used
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R15/00—Details of measuring arrangements of the types provided for in groups G01R17/00 - G01R29/00, G01R33/00 - G01R33/26 or G01R35/00
    • G01R15/14—Adaptations providing voltage or current isolation, e.g. for high-voltage or high-current networks
    • G01R15/20—Adaptations providing voltage or current isolation, e.g. for high-voltage or high-current networks using galvano-magnetic devices, e.g. Hall-effect devices, i.e. measuring a magnetic field via the interaction between a current and a magnetic field, e.g. magneto resistive or Hall effect devices
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R15/00—Details of measuring arrangements of the types provided for in groups G01R17/00 - G01R29/00, G01R33/00 - G01R33/26 or G01R35/00
    • G01R15/14—Adaptations providing voltage or current isolation, e.g. for high-voltage or high-current networks
    • G01R15/20—Adaptations providing voltage or current isolation, e.g. for high-voltage or high-current networks using galvano-magnetic devices, e.g. Hall-effect devices, i.e. measuring a magnetic field via the interaction between a current and a magnetic field, e.g. magneto resistive or Hall effect devices
    • G01R15/202—Adaptations providing voltage or current isolation, e.g. for high-voltage or high-current networks using galvano-magnetic devices, e.g. Hall-effect devices, i.e. measuring a magnetic field via the interaction between a current and a magnetic field, e.g. magneto resistive or Hall effect devices using Hall-effect devices
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R15/00—Details of measuring arrangements of the types provided for in groups G01R17/00 - G01R29/00, G01R33/00 - G01R33/26 or G01R35/00
    • G01R15/14—Adaptations providing voltage or current isolation, e.g. for high-voltage or high-current networks
    • G01R15/20—Adaptations providing voltage or current isolation, e.g. for high-voltage or high-current networks using galvano-magnetic devices, e.g. Hall-effect devices, i.e. measuring a magnetic field via the interaction between a current and a magnetic field, e.g. magneto resistive or Hall effect devices
    • G01R15/205—Adaptations providing voltage or current isolation, e.g. for high-voltage or high-current networks using galvano-magnetic devices, e.g. Hall-effect devices, i.e. measuring a magnetic field via the interaction between a current and a magnetic field, e.g. magneto resistive or Hall effect devices using magneto-resistance devices, e.g. field plates
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48135—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
    • H01L2224/48137—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being arranged next to each other, e.g. on a common substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181—Encapsulation

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Measuring Instrument Details And Bridges, And Automatic Balancing Devices (AREA)
KR1020167036165A 2014-06-27 2015-06-26 전류 센서 KR101882126B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JPJP-P-2014-132862 2014-06-27
JP2014132862 2014-06-27
PCT/JP2015/003230 WO2015198609A1 (ja) 2014-06-27 2015-06-26 電流センサ

Publications (2)

Publication Number Publication Date
KR20170008864A KR20170008864A (ko) 2017-01-24
KR101882126B1 true KR101882126B1 (ko) 2018-07-25

Family

ID=54937714

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020167036165A KR101882126B1 (ko) 2014-06-27 2015-06-26 전류 센서

Country Status (6)

Country Link
US (1) US10101368B2 (ko)
EP (1) EP3163312B1 (ko)
JP (1) JP6321800B2 (ko)
KR (1) KR101882126B1 (ko)
CN (1) CN106461705B (ko)
WO (1) WO2015198609A1 (ko)

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2017134022A (ja) * 2016-01-29 2017-08-03 旭化成エレクトロニクス株式会社 電流センサ及び製造方法
JP6650045B2 (ja) 2016-09-14 2020-02-19 旭化成エレクトロニクス株式会社 電流センサ
US10698005B2 (en) 2017-04-20 2020-06-30 Asahi Kasei Microdevices Corporation Magnetic detection device, current detection device, method for manufacturing magnetic detection device, and method for manufacturing current detection device
DE102018201425A1 (de) * 2018-01-30 2019-08-01 Osram Gmbh Konversionsbaugruppe mit anschlussrahmen
US10755994B2 (en) * 2018-10-29 2020-08-25 Advanced Semiconductor Engineering, Inc. Semiconductor package structure and semiconductor substrate
FR3090120B1 (fr) 2018-12-12 2021-12-10 Melexis Tech Capteur de courant à conducteur de courant intégré
JP2020095029A (ja) * 2018-12-12 2020-06-18 メレキシス テクノロジーズ エス エーＭｅｌｅｘｉｓ Ｔｅｃｈｎｏｌｏｇｉｅｓ ＳＡ 電流センサ
CN112114180B (zh) * 2019-06-20 2024-04-26 株式会社电装 电力转换装置
JP7420640B2 (ja) * 2019-07-10 2024-01-23 旭化成エレクトロニクス株式会社 電流センサおよび電流センサの製造方法
WO2021039264A1 (ja) * 2019-08-26 2021-03-04 株式会社村田製作所 電流センサ
US20230094395A1 (en) * 2021-09-29 2023-03-30 Asahi Kasei Microdevices Corporation Magnetic sensor
CN113866475A (zh) * 2021-09-30 2021-12-31 意瑞半导体（上海）有限公司 电流传感器的引线框架及电流传感器
WO2023167096A1 (ja) * 2022-03-03 2023-09-07 旭化成エレクトロニクス株式会社 電流センサ、及び電流検出方法
JP7328430B1 (ja) * 2022-10-04 2023-08-16 旭化成エレクトロニクス株式会社 電流センサ
JP7329115B1 (ja) * 2022-10-04 2023-08-17 旭化成エレクトロニクス株式会社 電流センサ
JP7329118B1 (ja) * 2022-10-24 2023-08-17 旭化成エレクトロニクス株式会社 電流センサ

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CH670004A5 (ko) * 1986-02-10 1989-04-28 Landis & Gyr Ag
JP2001165963A (ja) * 1999-12-09 2001-06-22 Sanken Electric Co Ltd ホール素子を備えた電流検出装置
JP4164615B2 (ja) * 1999-12-20 2008-10-15 サンケン電気株式会社 ホ−ル素子を備えた電流検出装置
EP1267173A3 (en) * 2001-06-15 2005-03-23 Sanken Electric Co., Ltd. Hall-effect current detector
JP2003172750A (ja) * 2001-09-26 2003-06-20 Sanken Electric Co Ltd 電流検出装置
US20060219436A1 (en) * 2003-08-26 2006-10-05 Taylor William P Current sensor
US7709754B2 (en) * 2003-08-26 2010-05-04 Allegro Microsystems, Inc. Current sensor
JP2007073803A (ja) * 2005-09-08 2007-03-22 Toshiba Corp 半導体装置及びその製造方法
JP4833111B2 (ja) * 2006-09-20 2011-12-07 株式会社東海理化電機製作所 電流検出器
US9222992B2 (en) * 2008-12-18 2015-12-29 Infineon Technologies Ag Magnetic field current sensors
US8400139B2 (en) * 2010-03-26 2013-03-19 Infineon Technologies Ag Sensor package having a sensor chip
JP2012229950A (ja) * 2011-04-25 2012-11-22 Asahi Kasei Electronics Co Ltd 電流センサおよび電流センサの製造方法
JP5695196B2 (ja) * 2011-07-13 2015-04-01 旭化成エレクトロニクス株式会社 電流センサ用基板及び電流センサ
EP2733496B1 (en) * 2011-07-13 2016-09-07 Asahi Kasei Microdevices Corporation Current sensor substrate and current sensor
US8907437B2 (en) * 2011-07-22 2014-12-09 Allegro Microsystems, Llc Reinforced isolation for current sensor with magnetic field transducer
JP6017182B2 (ja) * 2012-05-23 2016-10-26 旭化成エレクトロニクス株式会社 電流センサ

Also Published As

Publication number Publication date
EP3163312A1 (en) 2017-05-03
JP6321800B2 (ja) 2018-05-09
CN106461705A (zh) 2017-02-22
EP3163312A4 (en) 2017-07-26
JPWO2015198609A1 (ja) 2017-04-20
US10101368B2 (en) 2018-10-16
EP3163312B1 (en) 2019-05-22
WO2015198609A1 (ja) 2015-12-30
US20170160313A1 (en) 2017-06-08
KR20170008864A (ko) 2017-01-24
CN106461705B (zh) 2019-04-30

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E701 Decision to grant or registration of patent right
GRNT Written decision to grant