KR101854813B1 - 다축 렌즈, 합성 렌즈를 사용하는 빔 시스템, 및 합성 렌즈를 제조하는 방법 - Google Patents

다축 렌즈, 합성 렌즈를 사용하는 빔 시스템, 및 합성 렌즈를 제조하는 방법 Download PDF

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Publication number
KR101854813B1
KR101854813B1 KR1020110079521A KR20110079521A KR101854813B1 KR 101854813 B1 KR101854813 B1 KR 101854813B1 KR 1020110079521 A KR1020110079521 A KR 1020110079521A KR 20110079521 A KR20110079521 A KR 20110079521A KR 101854813 B1 KR101854813 B1 KR 101854813B1
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KR
South Korea
Prior art keywords
lens
apertures
coil
lens apertures
charged particle
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
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KR1020110079521A
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English (en)
Korean (ko)
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KR20120022620A (ko
Inventor
슈테판 라니오
Original Assignee
아이씨티 인티그레이티드 써킷 테스팅 게젤샤프트 퓌어 할프라이터프뤼프테크닉 엠베하
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Publication of KR20120022620A publication Critical patent/KR20120022620A/ko
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Publication of KR101854813B1 publication Critical patent/KR101854813B1/ko
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P76/00—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography
    • H10P76/20—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials
    • H10P76/204—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials of organic photoresist masks
    • H10P76/2041—Photolithographic processes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement or ion-optical arrangement
    • H01J37/10—Lenses
    • H01J37/14—Lenses magnetic
    • H01J37/141—Electromagnetic lenses
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P74/00—Testing or measuring during manufacture or treatment of wafers, substrates or devices
    • H10P74/20—Testing or measuring during manufacture or treatment of wafers, substrates or devices characterised by the properties tested or measured, e.g. structural or electrical properties
    • H10P74/203—Structural properties, e.g. testing or measuring thicknesses, line widths, warpage, bond strengths or physical defects
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/04—Means for controlling the discharge
    • H01J2237/045—Diaphragms
    • H01J2237/0451—Diaphragms with fixed aperture
    • H01J2237/0453—Diaphragms with fixed aperture multiple apertures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/04—Means for controlling the discharge
    • H01J2237/049—Focusing means
    • H01J2237/0492—Lens systems
    • H01J2237/04922—Lens systems electromagnetic
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/10—Lenses
    • H01J2237/14—Lenses magnetic
    • H01J2237/1405—Constructional details
    • H01J2237/141—Coils

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  • Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Electron Beam Exposure (AREA)
  • Microscoopes, Condenser (AREA)
KR1020110079521A 2010-08-11 2011-08-10 다축 렌즈, 합성 렌즈를 사용하는 빔 시스템, 및 합성 렌즈를 제조하는 방법 Expired - Fee Related KR101854813B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
EP10172528A EP2418672B1 (en) 2010-08-11 2010-08-11 Multi-axis lens, beam system making use of the compound lens, and method of manufacturing the compound lens
EP10172528.1 2010-08-11

Publications (2)

Publication Number Publication Date
KR20120022620A KR20120022620A (ko) 2012-03-12
KR101854813B1 true KR101854813B1 (ko) 2018-05-08

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020110079521A Expired - Fee Related KR101854813B1 (ko) 2010-08-11 2011-08-10 다축 렌즈, 합성 렌즈를 사용하는 빔 시스템, 및 합성 렌즈를 제조하는 방법

Country Status (5)

Country Link
US (1) US8481958B2 (https=)
EP (1) EP2418672B1 (https=)
JP (1) JP5685503B2 (https=)
KR (1) KR101854813B1 (https=)
TW (1) TWI469177B (https=)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9341936B2 (en) 2008-09-01 2016-05-17 D2S, Inc. Method and system for forming a pattern on a reticle using charged particle beam lithography
JP2015511069A (ja) 2012-03-19 2015-04-13 ケーエルエー−テンカー コーポレイション 柱で支持されたマイクロ電子レンズアレイ
US9343267B2 (en) 2012-04-18 2016-05-17 D2S, Inc. Method and system for dimensional uniformity using charged particle beam lithography
KR102154105B1 (ko) 2012-04-18 2020-09-09 디2에스, 인코포레이티드 하전 입자 빔 리소그라피를 이용하여 패턴들을 형성하기 위한 방법 및 시스템
JP5667618B2 (ja) * 2012-12-14 2015-02-12 株式会社アドバンテスト 電磁レンズ及び電子ビーム露光装置
US9824851B2 (en) * 2013-01-20 2017-11-21 William M. Tong Charge drain coating for electron-optical MEMS
US10347460B2 (en) 2017-03-01 2019-07-09 Dongfang Jingyuan Electron Limited Patterned substrate imaging using multiple electron beams
DE102017205231B3 (de) * 2017-03-28 2018-08-09 Carl Zeiss Microscopy Gmbh Teilchenoptische Vorrichtung und Teilchenstrahlsystem
KR20240055162A (ko) * 2018-11-16 2024-04-26 에이에스엠엘 네델란즈 비.브이. 전자기 복합 렌즈 및 이러한 렌즈를 갖는 하전 입자 광학 시스템
DE102019004124B4 (de) * 2019-06-13 2024-03-21 Carl Zeiss Multisem Gmbh Teilchenstrahl-System zur azimutalen Ablenkung von Einzel-Teilchenstrahlen sowie seine Verwendung und Verfahren zur Azimut-Korrektur bei einem Teilchenstrahl-System

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5116754B1 (https=) 1970-03-04 1976-05-27
JPS4929089B1 (https=) * 1970-05-13 1974-08-01
JPS5423476A (en) * 1977-07-25 1979-02-22 Akashi Seisakusho Kk Composite electron lens
US6254738B1 (en) * 1998-03-31 2001-07-03 Applied Materials, Inc. Use of variable impedance having rotating core to control coil sputter distribution
US6750455B2 (en) * 2001-07-02 2004-06-15 Applied Materials, Inc. Method and apparatus for multiple charged particle beams
US7223974B2 (en) * 2002-05-22 2007-05-29 Applied Materials, Israel, Ltd. Charged particle beam column and method for directing a charged particle beam
EP1956631B1 (en) 2002-12-17 2012-06-20 ICT Integrated Circuit Testing Gesellschaft für Halbleiterprüftechnik mbH Lens system for a plurality of charged particle beams
DE602004026463D1 (de) * 2004-12-30 2010-05-20 Integrated Circuit Testing Mehrfach-Linsenanordnung und Teilchenstrahlgerät mit selbiger

Also Published As

Publication number Publication date
JP5685503B2 (ja) 2015-03-18
KR20120022620A (ko) 2012-03-12
EP2418672A1 (en) 2012-02-15
TW201214499A (en) 2012-04-01
TWI469177B (zh) 2015-01-11
EP2418672B1 (en) 2013-03-20
US8481958B2 (en) 2013-07-09
US20120037813A1 (en) 2012-02-16
JP2012038732A (ja) 2012-02-23

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