KR101853828B1 - 열전물질, 열전물질의 열전 효율 향상 방법 및 열전물질을 포함하는 지지체 - Google Patents

열전물질, 열전물질의 열전 효율 향상 방법 및 열전물질을 포함하는 지지체 Download PDF

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KR101853828B1
KR101853828B1 KR1020110051461A KR20110051461A KR101853828B1 KR 101853828 B1 KR101853828 B1 KR 101853828B1 KR 1020110051461 A KR1020110051461 A KR 1020110051461A KR 20110051461 A KR20110051461 A KR 20110051461A KR 101853828 B1 KR101853828 B1 KR 101853828B1
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KR
South Korea
Prior art keywords
thermoelectric material
thermoelectric
heat treatment
bismuth telluride
nanowire
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KR1020110051461A
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English (en)
Korean (ko)
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KR20120133009A (ko
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이종민
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엘지이노텍 주식회사
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Priority to KR1020110051461A priority Critical patent/KR101853828B1/ko
Priority to PCT/KR2012/004260 priority patent/WO2012165855A2/fr
Publication of KR20120133009A publication Critical patent/KR20120133009A/ko
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Publication of KR101853828B1 publication Critical patent/KR101853828B1/ko

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N10/00—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects
    • H10N10/80—Constructional details
    • H10N10/85—Thermoelectric active materials
    • H10N10/851—Thermoelectric active materials comprising inorganic compositions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N10/00—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects
    • H10N10/01—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N10/00—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects
    • H10N10/10—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects operating with only the Peltier or Seebeck effects
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N10/00—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects
    • H10N10/80—Constructional details
    • H10N10/85—Thermoelectric active materials
    • H10N10/851—Thermoelectric active materials comprising inorganic compositions
    • H10N10/852—Thermoelectric active materials comprising inorganic compositions comprising tellurium, selenium or sulfur
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N10/00—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects
    • H10N10/80—Constructional details
    • H10N10/85—Thermoelectric active materials
    • H10N10/851—Thermoelectric active materials comprising inorganic compositions
    • H10N10/853—Thermoelectric active materials comprising inorganic compositions comprising arsenic, antimony or bismuth

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  • Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Powder Metallurgy (AREA)
KR1020110051461A 2011-05-30 2011-05-30 열전물질, 열전물질의 열전 효율 향상 방법 및 열전물질을 포함하는 지지체 KR101853828B1 (ko)

Priority Applications (2)

Application Number Priority Date Filing Date Title
KR1020110051461A KR101853828B1 (ko) 2011-05-30 2011-05-30 열전물질, 열전물질의 열전 효율 향상 방법 및 열전물질을 포함하는 지지체
PCT/KR2012/004260 WO2012165855A2 (fr) 2011-05-30 2012-05-30 Procédé de développement permettant d'améliorer le rendement thermoélectrique de matériau thermoélectrique via un traitement par recuit

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1020110051461A KR101853828B1 (ko) 2011-05-30 2011-05-30 열전물질, 열전물질의 열전 효율 향상 방법 및 열전물질을 포함하는 지지체

Publications (2)

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KR20120133009A KR20120133009A (ko) 2012-12-10
KR101853828B1 true KR101853828B1 (ko) 2018-05-02

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KR1020110051461A KR101853828B1 (ko) 2011-05-30 2011-05-30 열전물질, 열전물질의 열전 효율 향상 방법 및 열전물질을 포함하는 지지체

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KR (1) KR101853828B1 (fr)
WO (1) WO2012165855A2 (fr)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101528516B1 (ko) * 2013-09-06 2015-06-12 한국과학기술연구원 유기-무기 하이브리드 복합체를 포함하는 고유연성 열전 변환 재료 및 이를 포함하는 열전 소자
KR101709755B1 (ko) * 2014-10-31 2017-02-23 주식회사 엘지화학 등방 가압 고상반응법을 이용한 화합물 형성 방법
KR101719928B1 (ko) * 2015-12-23 2017-03-27 한국세라믹기술원 Bi-Te계 세라믹스의 제조방법
CN106549096B (zh) * 2016-12-08 2019-03-26 苏州鸿凌达电子科技有限公司 热电薄膜材料及其制作工艺
CN114249305B (zh) * 2020-09-23 2023-05-05 北京信息科技大学 一种具有宽温域性能稳定的碲化铋基热电薄膜及其制备方法
CN112376112B (zh) * 2020-09-30 2022-03-25 杭州大和热磁电子有限公司 一种提高热电固态制冷器制冷温差的方法
CN114671688A (zh) * 2022-03-08 2022-06-28 成都露思特新材料科技有限公司 一种碲化铋基热电材料的3d打印件及其打印方法、热电器件

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101680764B1 (ko) * 2008-08-11 2016-11-29 삼성전자주식회사 이방성 신장 열전 나노복합물, 그의 제조방법 및 이를 포함한 열전소자
KR20100138171A (ko) * 2009-06-24 2010-12-31 이화여자대학교 산학협력단 수열합성법을 이용한 다양한 형태의 비스무스 텔루라이드 나노구조체의 제조방법 및 이에 의해 제조된 비스무스 텔루라이드 나노구조체
KR101047610B1 (ko) * 2009-10-15 2011-07-07 연세대학교 산학협력단 코어/쉘 구조를 갖는 열전 나노와이어의 제조방법
KR101594132B1 (ko) * 2009-11-05 2016-02-16 삼성전자주식회사 나노복합체형 열전재료, 이를 포함하는 열전모듈과 열전 장치

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WO2012165855A2 (fr) 2012-12-06
KR20120133009A (ko) 2012-12-10
WO2012165855A3 (fr) 2013-03-28

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