KR101840109B1 - 전자 부품용 적층 배선막 및 피복층 형성용 스퍼터링 타깃재 - Google Patents

전자 부품용 적층 배선막 및 피복층 형성용 스퍼터링 타깃재 Download PDF

Info

Publication number
KR101840109B1
KR101840109B1 KR1020160031260A KR20160031260A KR101840109B1 KR 101840109 B1 KR101840109 B1 KR 101840109B1 KR 1020160031260 A KR1020160031260 A KR 1020160031260A KR 20160031260 A KR20160031260 A KR 20160031260A KR 101840109 B1 KR101840109 B1 KR 101840109B1
Authority
KR
South Korea
Prior art keywords
coating layer
atomic
alloy
sputtering target
target material
Prior art date
Application number
KR1020160031260A
Other languages
English (en)
Korean (ko)
Other versions
KR20160112995A (ko
Inventor
히데오 무라타
Original Assignee
히타치 긴조쿠 가부시키가이샤
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 히타치 긴조쿠 가부시키가이샤 filed Critical 히타치 긴조쿠 가부시키가이샤
Publication of KR20160112995A publication Critical patent/KR20160112995A/ko
Application granted granted Critical
Publication of KR101840109B1 publication Critical patent/KR101840109B1/ko

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22C—ALLOYS
    • C22C19/00—Alloys based on nickel or cobalt
    • C22C19/002—Alloys based on nickel or cobalt with copper as the next major constituent
    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22C—ALLOYS
    • C22C19/00—Alloys based on nickel or cobalt
    • C22C19/005—Alloys based on nickel or cobalt with Manganese as the next major constituent
    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22C—ALLOYS
    • C22C19/00—Alloys based on nickel or cobalt
    • C22C19/03—Alloys based on nickel or cobalt based on nickel
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
    • C23C14/3414—Metallurgical or chemical aspects of target preparation, e.g. casting, powder metallurgy
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
    • H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
    • H01L21/02266—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by physical ablation of a target, e.g. sputtering, reactive sputtering, physical vapour deposition or pulsed laser deposition
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/02631—Physical deposition at reduced pressure, e.g. MBE, sputtering, evaporation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
    • H01L21/76829—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing characterised by the formation of thin functional dielectric layers, e.g. dielectric etch-stop, barrier, capping or liner layers
    • H01L21/76832—Multiple layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physical Vapour Deposition (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Optics & Photonics (AREA)
KR1020160031260A 2015-03-20 2016-03-16 전자 부품용 적층 배선막 및 피복층 형성용 스퍼터링 타깃재 KR101840109B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JPJP-P-2015-057552 2015-03-20
JP2015057552 2015-03-20

Publications (2)

Publication Number Publication Date
KR20160112995A KR20160112995A (ko) 2016-09-28
KR101840109B1 true KR101840109B1 (ko) 2018-04-26

Family

ID=57044236

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020160031260A KR101840109B1 (ko) 2015-03-20 2016-03-16 전자 부품용 적층 배선막 및 피복층 형성용 스퍼터링 타깃재

Country Status (4)

Country Link
JP (1) JP6706418B2 (ja)
KR (1) KR101840109B1 (ja)
CN (1) CN105986233B (ja)
TW (1) TWI576454B (ja)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6443220B2 (ja) * 2015-05-25 2018-12-26 住友金属鉱山株式会社 スパッタリング用合金ターゲット
AT15574U3 (de) * 2017-05-11 2018-05-15 Plansee Se Flexibles Bauteil mit Schichtaufbau mit metallischer Lage
JP6950447B2 (ja) * 2017-10-20 2021-10-13 大同特殊鋼株式会社 半導体装置
WO2019093348A1 (ja) * 2017-11-09 2019-05-16 三井金属鉱業株式会社 配線構造及びターゲット材

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006310814A (ja) * 2005-03-29 2006-11-09 Hitachi Metals Ltd 薄膜配線層
JP2010132974A (ja) 2008-12-04 2010-06-17 Nippon Steel Materials Co Ltd Ｎｉ−Ｍｏ系合金スパッタリングターゲット板
JP2012222166A (ja) * 2011-04-08 2012-11-12 Ulvac Japan Ltd 配線膜、薄膜トランジスタ、ターゲット、配線膜の形成方法

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5522948A (en) * 1978-08-09 1980-02-19 Toyo Kasei Kk Manufacture of record disc with picture
JP4496518B2 (ja) 2002-08-19 2010-07-07 日立金属株式会社 薄膜配線
JP6369750B2 (ja) * 2013-09-10 2018-08-08 日立金属株式会社 積層配線膜およびその製造方法ならびにＮｉ合金スパッタリングターゲット材

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006310814A (ja) * 2005-03-29 2006-11-09 Hitachi Metals Ltd 薄膜配線層
JP2010132974A (ja) 2008-12-04 2010-06-17 Nippon Steel Materials Co Ltd Ｎｉ−Ｍｏ系合金スパッタリングターゲット板
JP2012222166A (ja) * 2011-04-08 2012-11-12 Ulvac Japan Ltd 配線膜、薄膜トランジスタ、ターゲット、配線膜の形成方法

Also Published As

Publication number Publication date
JP6706418B2 (ja) 2020-06-10
CN105986233B (zh) 2018-08-07
JP2016178286A (ja) 2016-10-06
TW201706432A (zh) 2017-02-16
CN105986233A (zh) 2016-10-05
TWI576454B (zh) 2017-04-01
KR20160112995A (ko) 2016-09-28

Similar Documents

Publication Publication Date Title
KR101804660B1 (ko) 전자 부품용 적층 배선막 및 피복층 형성용 스퍼터링 타깃재
KR101577143B1 (ko) 적층 배선막 및 그 제조 방법 및 Ni 합금 스퍼터링 타깃재
KR102032085B1 (ko) 전자 부품용 적층 배선막 및 피복층 형성용 스퍼터링 타깃재
KR101613001B1 (ko) Mo 합금 스퍼터링 타깃재의 제조 방법 및 Mo 합금 스퍼터링 타깃재
KR101840109B1 (ko) 전자 부품용 적층 배선막 및 피복층 형성용 스퍼터링 타깃재
KR101358529B1 (ko) 전자부품용 적층 배선막 및 피복층 형성용 스퍼터링 타겟재
KR101600169B1 (ko) 전자 부품용 금속 박막 및 금속 박막 형성용 Mo 합금 스퍼터링 타깃재
TWI504772B (zh) 銅-錳合金膜及銅-錳合金濺鍍靶材及銅-錳合金膜的成膜方法
KR101597018B1 (ko) 금속 박막 및 금속 박막 형성용 Mo 합금 스퍼터링 타깃재
JP6380837B2 (ja) 被覆層形成用スパッタリングターゲット材およびその製造方法
JP4470147B2 (ja) 薄膜配線層

Legal Events

Date Code Title Description
A201 Request for examination
E902 Notification of reason for refusal
AMND Amendment
E90F Notification of reason for final refusal
AMND Amendment
E601 Decision to refuse application
AMND Amendment
X701 Decision to grant (after re-examination)
GRNT Written decision to grant