KR101820936B1 - Adhesive composition, adhesive film, dicing die bonding film, semiconductor wafer and semiconductor device - Google Patents

Abstract

The present invention relates to an adhesive composition, a dicing die bonding film, a semiconductor wafer and a semiconductor device, and more particularly to an adhesive composition comprising an epoxy resin, a thermoplastic resin, a curing agent and a porous filler, A dicing die bonding film, a semiconductor wafer including the dicing die bonding film, and a semiconductor device.

Description

BACKGROUND OF THE INVENTION 1. Field of the Invention [0001] The present invention relates to an adhesive composition, a dicing die bonding film, a semiconductor wafer, and a semiconductor device having the adhesive composition, the dicing die bonding film,

The present invention relates to an adhesive composition, a dicing die-bonding film, a semiconductor wafer, and a semiconductor device.

A manufacturing process of a semiconductor chip generally includes a step of forming a fine pattern on a wafer, polishing and packaging the wafer.

The packaging process includes a wafer inspection process for inspecting defective semiconductor chips; A dicing step of cutting the wafer into individual chips; A die bonding step of attaching the separated chip to a circuit board or a mount plate of a lead frame; A wire bonding process of connecting a chip pattern provided on a semiconductor chip and a circuit pattern of a circuit film or a lead frame by an electrical connection means such as a wire; A molding process for encapsulating the exterior with an encapsulant to protect the internal circuitry of the semiconductor chip and other components; A trimming process for cutting the dam bars connecting the leads and the leads; A foaming step of bending the lead in a desired shape; And a finished product inspection process for inspecting the finished package for defects.

In the dicing step, the wafer is cut into a predetermined thickness using a diamond wheel or the like. At this time, in order to fix the wafer, the dicing film is laminated on the back surface of the wafer under appropriate conditions, and then the process is performed.

Further, a die bonding film (adhesive film) is used to attach the diced individual chips to the circuit board.

In recent years, the amount of information to be processed is enormous, so that the number of wireless communication applications is increased and the transmission speed required for communication is also increasing. For this reason, copper is used as the wiring material of the chip as one of means for increasing the speed. However, copper tends to corrode easily. Particularly, in a package in which chips are stacked in multiple stages, copper ions generated by corrosion move inside the adhesive, and there is a tendency that electric signals are liable to be lost in the chip or between the chip and the chip .

Also, from the viewpoint of improving the function of the semiconductor chip, semiconductor devices are often connected to a complicated mounting board, and a lead frame made of copper tends to be preferred in order to improve connection reliability. Even in such a case, a loss of an electrical signal due to copper ions generated from the lead frame may be a problem.

As described above, in a package using a member made of copper, there is a high possibility that copper ions are generated from the member, causing electric inconvenience, and sufficient HAST resistance can not be obtained.

Accordingly, there is a need to develop an adhesive composition exhibiting good package reliability (HAST resistance) even under high temperature and humidity conditions, including a component capable of capturing copper ions so as to sufficiently suppress the occurrence of electrical inconvenience of the package.

The present invention is to provide an adhesive composition having excellent package reliability even under high temperature and high humidity conditions.

The present invention is also intended to provide a dicing die-bonding film comprising a cured product of the adhesive composition.

The present invention also provides a semiconductor wafer comprising the dicing die-bonding film.

The present invention also provides a semiconductor device comprising a cured product of the adhesive composition.

The present invention provides an adhesive composition comprising an epoxy resin, a thermoplastic resin, a curing agent, and a porous filler including open pores.

The present invention also relates to a base film; An adhesive portion formed on the base film; And a bonding portion formed on the adhesive portion and containing a cured product of the above-mentioned adhesive composition.

Further, the present invention provides a semiconductor wafer in which a bonding portion of the dicing die bonding film is attached to one surface of a wafer, and a base film of the dicing die bonding film is fixed to the wafer ring frame.

Further, the present invention provides a wiring board comprising: a wiring board; An adhesive layer attached to a chip mounting surface of the wiring board and including a cured product of the adhesive composition; And a semiconductor chip mounted on the adhesive layer.

Hereinafter, the adhesive composition, the dicing die-bonding film, the semiconductor wafer and the semiconductor device according to the specific embodiment of the present invention will be described in more detail.

According to one embodiment of the invention, an adhesive composition comprising an epoxy resin, a thermoplastic resin, a curing agent and a porous filler comprising open pores may be provided.

The inventors of the present invention have recognized that it is necessary to develop an adhesive composition containing a component capable of capturing copper ions formed by corrosion of copper in a package using a member made of copper, It has been confirmed through experiments that the adhesive composition containing the porous filler can capture copper ions and exhibit good package reliability (HAST resistance) even under high temperature and high humidity conditions, and completed the invention.

In particular, the adhesive composition containing the porous filler not only exhibits good package reliability even under high temperature and high humidity conditions as described above, but also improves thermal conductivity, adjusts flame retardancy, surface hardness and melt viscosity, It can play a role of improving.

Meanwhile, the porous filler included in the adhesive composition of one embodiment may include open holes. The open hole means that the pores are directly exposed to the surface of the porous filler by the holes that can communicate with the pores inside the pillar at the surface of the pillar. On the contrary, the closed hole means a hole in which the pores are contained in the pillar but the pores are not exposed on the surface. The porous filler included in the adhesive composition of one embodiment may include an open hole to exhibit a better copper adsorption effect than an adhesive composition including a closed hole.

And, the porous filler may include voids having an average diameter of 0.5 to 200 nm, preferably 1 to 50 nm. The average diameter of the voids contained in the porous filler can be measured by a BJH (Barret-Joyner-Halenda) method. If the diameter of the voids of the porous filler is less than 0.5 nm, the probability of adsorption is low because copper ions are difficult to enter When the diameter is 200 nm or more, the hole is too large and the fixing effect of the copper ion may be reduced.

In addition, the average particle diameter of the porous filler may be 20 占 퐉 or less, preferably 0.01 to 5 占 퐉, and more preferably 0.1 to 3 占 퐉. The average particle diameter of the porous filler can be measured by a dry laser diffraction particle size distribution measurement method, and when the shape of the particle is not spherical, the longest diameter is measured as a particle diameter.

The pores of the porous filler having such a role may be substituted with functional groups. Specifically, the functional group may be an alkyl group, an alkenyl group, an alkylaryl group, an arylalkyl group, an aryl group, a hydroxy group, an alkoxy group, an ether group, an ester group, an ammonium group, a sulfonic acid group, a sulfonic acid ester group, a carboxyl group, An amino group, an amino group, an amino group, an amino group, an amino group, an amino group, an amino group, an amino group, an amino group, an amine group, an imine group and a nitrile group. Or more.

At this time, since the porous filler contains a specific functional group, it can interact with the copper ion and can form chelate, so that the copper ion generated by the corrosion in the adhesive composition can be captured, Good package reliability can be exhibited even under a high humidity condition.

And, in the adhesive composition of this embodiment, the porous filler may be alumina or a layered silicate. The adhesive composition may include alumina or layered silicate alone in the adhesive composition, or may be incorporated in the adhesive composition, if necessary, by mixing them.

Specific examples of the alumina include, but are not limited to, α-alumina, γ-alumina, diaspore (α-Al ₂ O ₃ .H ₂ O), boehmite from the group consisting of _{γ-Al 2 O 3 · H} 2 O), hydrazone quality light _{(hydragillite) (γ-Al 2} O 3 · 3H 2 O) and via light _{(bayerite) (Al 2 O 3} · 3H 2 O) At least one selected may be used.

In the present specification, the term "layered silicate" means a clay mineral which is an inorganic compound in which a sheet-like silicate composed of components such as silicon, aluminum, magnesium and oxygen is stacked. Although this layered silicate is not particularly limited, the individual platelets contained in the layered silicate have a thickness of 0.5 nm to 5 nm, a length of 25 nm to 2,000 nm, and an aspect ratio ) Is in the range of 50 to 2,000. As used herein, the term " platelet " refers to an individual layer constituting a layered silicate. By maintaining the shape of the platelet within the above-mentioned range, dispersibility and compatibility in the adhesive composition of the layered silicate It is possible to maintain excellent physical properties of the resin.

Such a layered silicate can be obtained from nature or can be easily synthesized from a known raw material or the like, and physical properties such as kind and purity can be easily controlled at the time of synthesis. The kind of the layer silicate is not particularly limited, and natural layer silicate, synthetic layer silicate and organic organoclay which is organically modified layer silicate can be used, for example.

Examples of the natural or synthetic layered silicate include mica, fluoromica, pyrophyllite, glauconite, vermiculite, sepiolite, aloe, But are not limited to, allophone, imogolite, talc, illite, sobockite, svinfordite, kaolinite, dickite, nacrite, anauxite, sericite, ledikite, montronite, metahalloysite, serpentine clay, chrysotile, antigorite, for example, antigorite, attapulgite, palygorskite, Kibushi clay, gairome clay, hisingerite, chlorite, montmorillonite, sodium Sodium montmorillonite, magnesium montmorillonite Magnesium montmorillonite, calcium montmorillonite, nontronite, bentonite, beidellite, hectorite, sodium hectorite, saponite, ), Sauconite, fluorohectorite, stevensite, volkonskoite, magadiite, kenyaite, halloysite, Hydrotalcite, smectite or smectite-type layered silicate, and among these, mica, fluoromica, vermiculite, kaolinite, Montmorillonite, sodium montmorillonite, magnesium montmorillonite, calcium montmorillonite, hectorite, and the like), montmorillonite, sodium montmorillonite, magnesium montmorillonite, calcium montmorillonite, in a group of layered silicates consisting of a hectorite, sodium hectorite, saponite, magadiite, kenyaite, smectite and smectite-type, It is preferable to use a mixture of more than two species. Such layered silicates may be obtained in nature in nature or may be synthesized by common methods known in the art.

The porous filler may be added in an amount of 0.5 to 100 parts by weight, preferably 50 to 100 parts by weight based on 100 parts by weight of the thermoplastic resin. If the content of the porous filler is too small, the effect of improving the physical properties due to the addition of the filler may be insufficient. If the content is too large, the dispersibility and compatibility in the composition may be deteriorated.

Meanwhile, the epoxy resin included in the adhesive composition of the embodiment may be an epoxy resin known to be used for an adhesive without any particular limitation. For example, the epoxy resin containing two or more epoxy groups in the molecule and having a glass transition temperature of An epoxy resin having a weight average molecular weight of 300 to 2,000 and a melting point of at least 50 deg.

It is also preferable that the epoxy resin has a self-softening point before curing of 50 캜 to 100 캜. If the softening point is less than 50 캜, the elasticity of the adhesive film in the A-stage state may deteriorate and the tackiness may become excessively large and the handling property may deteriorate. If it exceeds 100 캜, There is a possibility that a problem such as chip breakage may occur.

The epoxy resin may have an average epoxy equivalent of 180 to 1,000. If the epoxy equivalent of the epoxy resin is less than 180, the crosslinking density becomes excessively high, and the adhesive film may exhibit overall rigid properties. If the epoxy equivalent is more than 1,000, the heat resistance may be deteriorated.

Examples of such an epoxy resin include bifunctional epoxy resins such as bisphenol A epoxy resin and bisphenol F epoxy resin; Or a cresol novolac epoxy resin, a phenol novolak epoxy resin, a tetrafunctional epoxy resin, a biphenyl type epoxy resin, a triphenolmethane type epoxy resin, an alkyl modified triphenolmethane type epoxy resin, a naphthalene type epoxy resin, Type epoxy resin, or a dicyclopentadiene-modified phenol-type epoxy resin. These epoxy resins may be used alone or in combination of two or more.

The epoxy resin may be contained in an amount of 10 parts by weight to 1000 parts by weight, preferably 200 parts by weight to 400 parts by weight, based on 100 parts by weight of the thermoplastic resin. If the content of the epoxy resin is less than 10 parts by weight, the adhesive property of the adhesive composition may be insufficient. If the content exceeds 1,000 parts by weight, peeling force with the peeling sheet for forming a protective film is increased, .

The thermoplastic resin can be used without any particular limitation so long as it can be kept in a film form without breaking before the curing process with high molecular weight and can maintain the viscoelasticity after the reaction.

The glass transition temperature of such a thermoplastic resin may be -20 캜 to 40 캜, preferably -10 캜 to 30 캜. If the glass transition temperature is lower than -20 占 폚, the flowability becomes excessively high and the handleability may deteriorate. If the glass transition temperature is higher than 40 占 폚, the adhesive force with the wafer may deteriorate at a low temperature, There is a fear that the cooling water may penetrate into the space.

The thermoplastic resin may have a weight average molecular weight of 100,000 to 1,000,000, preferably 200,000 to 90,000. If the weight average molecular weight is less than 100,000, handling and heat resistance may be inferior, and control of flowability upon filling of the circuit may become difficult. When the weight average molecular weight is more than 100,000, circuit fillability and reliability There is a risk of degradation.

Specific examples of the thermoplastic resin include polyimide, polyetherimide, polyesterimide, polyamide, polyether sulfone, polyether ketone, polyolefin, polyvinyl chloride, phenoxy, reactive acrylonitrile butadiene rubber , An acrylic resin, and the like.

Of the above thermoplastic resins, the acrylic resin may specifically be an acrylic copolymer containing (meth) acrylic acid and a derivative thereof. Examples of the (meth) acrylic acid and derivatives thereof include (meth) acrylic acid; Alkyl (meth) acrylates containing an alkyl group having 1 to 12 carbon atoms such as methyl (meth) acrylate or ethyl (meth) acrylate; (Meth) acrylonitrile or (meth) acrylamide; And other copolymerizable monomers.

The acrylic resin may further contain one or more kinds of functional groups such as a glycidyl group, a hydroxyl group, a carboxyl group and an amine group. Such functional groups include glycidyl (meth) acrylate, hydroxy (meth) acrylate, Hydroxyethyl (meth) acrylate or carboxy (meth) acrylate may be copolymerized. When the acrylic resin contains a functional group, its content is preferably 0.5 to 10 parts by weight based on the total weight of the resin. If the content of the functional group is less than 0.5 parts by weight, it may be difficult to secure the adhesive strength. If the content is more than 10 parts by weight, workability may be deteriorated or gelation may be caused.

The curing agent is not particularly limited as long as it can form a crosslinked structure with the epoxy resin or the thermoplastic resin described above. In the adhesive composition, the thermoplastic resin forming the soft segment and the epoxy resin constituting the hard segment Resin to form a crosslinked structure to improve the heat resistance and at the same time to serve as a connecting loop at the interface of the components, thereby improving the reliability of the semiconductor package.

As such a curing agent, a polyfunctional phenol resin can be used, and it is more preferable to use a polyfunctional phenol resin having a hydroxyl group equivalent of 100 to 1,000. If the hydroxyl group equivalent of the phenol resin is less than 100, the cured product with the epoxy resin may have a hard property and the buffering property of the semiconductor package may be deteriorated. If the hydroxyl equivalent is more than 1,000, the crosslinking density is lowered, There is a risk of degradation.

The curing agent may have a softening point of 50 ° C to 150 ° C. If the softening point of the curing agent is less than 50 캜, handling properties and / or heat resistance may be deteriorated due to an increase in tack characteristics. If the softening point exceeds 150 캜, the hardness of the adhesive film becomes excessively high, Or defects such as scattering of chips upon dicing may occur.

Examples of the phenol resin include bisphenol A resin, phenol novolac resin, cresol novolac resin, bisphenol A novolak resin, phenol aralkyl resin, multifunctional novolak resin, dicyclopentadiene phenol novolac resin, aminotriazine Phenol novolak resin, polybutadiene phenol novolak resin, biphenyl type resin, and the like.

The curing agent may be contained in an amount of 0.4 to 2 equivalents, preferably 0.8 to 1.2 equivalents, based on the epoxy equivalent of the epoxy resin. If the content of the curing agent is less than 0.4 equivalent, the amount of the epoxy resin to be cured increases during the curing process, and the heat resistance may be lowered or a process at a high temperature or for a long time may be required for curing the unreacted resin. When the content is more than 2 equivalents, the moisture absorption rate, storage stability and dielectric properties may increase due to unreacted hydroxyl groups.

In addition, the adhesive composition of one embodiment may further include at least one component selected from the group consisting of a curing accelerator, an inorganic filler, and a coupling agent.

At this time, the curing accelerator may act to accelerate the curing reaction. Examples of the curing accelerator include an imidazole compound, triphenylphosphine (TPP), tertiary amines, etc., Is preferred.

Examples of the imidazole compound include 2-methylimidazole (2MZ), 2-ethyl-4-methylimidazole (2E4MZ), 2-phenylimidazole (2PZ), 1-cyanoethyl- (2PZ-CN), 2-undecyl imidazole (C11Z), 2-heptadecyl imidazole (C17Z) and 1-cyanoethyl-2-phenylimidazole trimetalate .

The curing accelerator may be contained in an amount of 0.01 to 10 parts by weight, preferably 0.1 to 1 part by weight based on 100 parts by weight of the curing agent. If the content is less than 0.01 part by weight, heat resistance or adhesion may be deteriorated. If the content is more than 10 parts by weight, the curing reaction may occur excessively rapidly or storage stability may be deteriorated.

In addition, the adhesive composition may further include an inorganic filler in view of handleability, heat resistance and control of melt viscosity. Examples of such an inorganic filler include, but are not limited to, silica, aluminum hydroxide, calcium carbonate, magnesium hydroxide, aluminum oxide, talc or aluminum nitride.

The above-mentioned inorganic filler may have an average particle diameter of 0.001 to 10 mu m, preferably 0.005 to 1 mu m. If the average particle diameter is less than 0.001 mu m, the filler may aggregate in the adhesive layer, or the appearance may be poor. When the average particle diameter is more than 10 mu m, the filling agent may be prevented from protruding onto the surface of the adhesive layer, There is a fear that the deterioration may occur.

The filler may be included in an amount of 10 parts by weight to 500 parts by weight, preferably 100 parts by weight to 300 parts by weight, based on 100 parts by weight of the thermoplastic resin. If the content is less than 10 parts by weight, the heat resistance and handleability improvement effect due to the addition of the filler may be deteriorated. If the content is more than 500 parts by weight, workability and substrate adhesion may be deteriorated.

In addition, the adhesive composition of one embodiment may further include a coupling agent, thereby improving interfacial adhesion between the resin component and the wafer or the filler, or anti-wet heat characteristics. Examples of such coupling agents include, but are not limited to, one or more of silane coupling agents, titanium coupling agents and aluminum coupling agents.

The coupling agent may be contained in an amount of 0.01 to 50 parts by weight, preferably 0.1 to 15 parts by weight based on 100 parts by weight of the adhesive composition. If the content is less than 0.01 part by weight, the adhesion improving effect may be deteriorated. If the content is more than 50 parts by weight, voids may be generated or heat resistance may be deteriorated.

On the other hand, according to another embodiment of the present invention, An adhesive portion formed on the base film; And a dicing die-bonding film formed on the adhesive portion and including a bonding portion containing a cured product of the above-mentioned adhesive composition.

In this specification, the cured product of the adhesive composition refers to a state in which the adhesive composition is present in the form of an adhesive through a curing process such as a drying process.

The type of the base film is not particularly limited and includes, for example, a polyethylene terephthalate film, a polytetrafluoroethylene film, a polyethylene film, a polypropylene film, a polybutene film, a polybutadiene film, a polyvinyl chloride copolymer film, A plastic film such as a film may be used. The surface of the base film may be subjected to a releasing treatment. Examples of the releasing agent that can be used in the releasing treatment include an alkyd type, a silicone type, a fluorine type, an unsaturated ester type, a polyolefin type, or a wax type releasing agent. Of these, use of an alkyd type, silicone type or fluorine type releasing agent is preferable from the viewpoint of heat resistance Do.

And, the base film may have a thickness of 10 탆 to 200 탆, preferably 50 탆 to 180 탆. If the thickness is less than 10 mu m, adjustment of the cut depth may become unstable in the dicing step. When the thickness exceeds 200 mu m, a large amount of burr may occur in the dicing step, There is a possibility that the pending process may not be accurately performed.

Further, the thickness of the adhesive layer containing the cured product of the adhesive composition of the embodiment may be 5 to 200 占 퐉 after heat curing, and preferably 10 to 100 占 퐉. If the thickness is less than 5 mu m, the stress relaxation effect and the filling property at high temperature may be deteriorated. If the thickness exceeds 200 mu m, the economical efficiency may be deteriorated.

The kind of the pressure-sensitive adhesive constituting the pressure-sensitive adhesive portion in the dicing die-bonding film is not particularly limited, and an ordinary ultraviolet curing pressure-sensitive adhesive or a thermosetting pressure-sensitive adhesive can be used. When an ultraviolet curing type pressure-sensitive adhesive is used, ultraviolet rays are irradiated on the base film side to lower the adhesive force, and in the case of the thermosetting type pressure-sensitive adhesive, appropriate heat is applied to lower the adhesive force.

The method of manufacturing the dicing die-bonding film of this embodiment is not particularly limited. For example, a hot roll laminate or a lamination press method can be used, and hot roll lamination method desirable. The hot roll lamination process may be carried out at a temperature of from 10 캜 to 100 캜 at a pressure of from 0.1 Kg _f / cm ² to 10 Kg _f / cm ² , but is not limited thereto.

According to another embodiment of the present invention, a bonding portion of the dicing die bonding film of the above-described embodiment is attached to one surface of the wafer, and the base film of the dicing die bonding film is fixed to the wafer ring frame. A wafer may be provided.

The above-described semiconductor wafer can be manufactured by attaching (laminating) the adhered portion of the dicing die bonding film to the rear surface of the semiconductor wafer at a temperature of 0 ° C to 180 ° C, and fixing the base film to the wafer ring frame .

According to still another embodiment of the present invention, there is provided a semiconductor device comprising: a wiring board; An adhesive layer formed on the chip mounting surface of the wiring board and containing a cured product of the adhesive composition of one embodiment; And a semiconductor chip mounted on the adhesive layer.

The semiconductor device as described above may be manufactured through the following process. That is, the semiconductor wafer with the dicing die-bonding film described above is completely cut using a dicing machine and divided into individual chips. Thereafter, the adhesive portion is cured through means such as ultraviolet irradiation or application of heat. As described above, the adhesive force of the adhesive hardened by ultraviolet rays or heat deteriorates the adhesiveness of the adhesive, so that the chip can be easily picked up in a subsequent step. At this time, if necessary, an expansion step for stretching the dicing die-bonding film is carried out to determine the gap between the chips and to cause a deviation in the bonded portion and the bonded portion interface to facilitate the pick-up.

When the chip is picked up in the above state, the semiconductor wafer and the adhesive portion are separated from the adhesive portion, and a chip having only the adhesive layer can be obtained. And the chip with the adhesive layer thus obtained is attached to the semiconductor substrate. Adhesion temperature of the chip is typically a 180 to 100 ℃ ℃, attachment time is 0.5 seconds to 3 seconds, the pressure attachment is 0.5 kg _f / cm ² It is to about ² kg _f / cm 2.

After the above process, the semiconductor device is obtained through the wire bonding and the molding process. Particularly, the semiconductor device of the embodiment can optimize the tack strength of the adhesive for die bonding, etc., so that the chip is peeled, pinched or leaned during the wire bonding or molding process without performing the pre-curing process after the die bonding Can be suppressed.

The method of manufacturing such a semiconductor device is not limited to the above-described process, and may include an arbitrary process or may change the order of the process. For example, it is possible to proceed in the order of ultraviolet curing, dicing, and expansing, or in the order of dicing, expansion, and ultraviolet curing. It may also include a heating or cooling process after the chip attachment process.

According to the present invention, an adhesive composition having excellent package reliability can be provided even under high-temperature and high-humidity conditions, and a dicing die-bonding film, a semiconductor wafer, and a semiconductor device including a cured product of the adhesive composition can be provided.

The invention will be described in more detail in the following examples. However, the following examples are illustrative of the present invention, and the present invention is not limited by the following examples.

< Example  One: Die bonding  Production of Film>

(1) Production of acrylic thermoplastic resin

40 parts by weight of butyl acrylate, 60 parts by weight of ethyl acrylate, 15 parts by weight of acrylonitrile and 10 parts by weight of glycidyl methacrylate as a functional group-containing monomer were mixed with 100 parts by weight of a toluene solvent, Hour to obtain an acrylic resin having a functional group. As a result, the weight average molecular weight of the polymerized resin was 700,000 and the Tg was 10 占 폚.

(2) Production of Die Bonding Film

100 parts by weight of the acrylic resin prepared in the above (1), 300 parts by weight of EOCN-103s (Japanese explosive, cresol novolak type epoxy resin, epoxy equivalent 214, softening point 83 캜) as an epoxy resin, 100 parts by weight of a curing agent KPH-F2001 , 10 parts by weight of a silane coupling agent A-187 (GE Toshiba Silicone,? -Glycidoxypropyltrimethoxysilane), 2 parts by weight of a curing accelerator 2PZ (manufactured by Shikoku Co., (Admatech SX037-C900H3-SSJ 5 nm open pores, surface treated amines), 0.2 part by weight of a filler SFP-30M (denka, spherical silica, average particle diameter 700 nm) Were mixed with methyl ethyl ketone (MEK) with stirring to prepare a varnish. This was applied to PET having a thickness of 38 탆 which had been subjected to the releasing treatment and dried at 110 캜 for 3 minutes to produce a die bonding film having a thickness of 40 탆.

< Example  2>

A die-bonding film was prepared in the same manner as in Example 1 except that a porous silica filler (Admatech SX037-C900H3, 5 nm open hole, no surface treatment) was used in place of the porous silica filler of Example 1.

< Comparative Example  1>

A die-bonding film was prepared in the same manner as in Example 1, except that general silica (Denka SFP-30M, no hole) was used in place of the porous silica filler of Example 1.

< Comparative Example  2>

A die-bonding film was prepared in the same manner as in Example 1, except that ordinary silica (Admatech closed porous silica 1, 4 nm closed hole) was used instead of the porous silica filler of Example 1.

< Test Example >

[ Dicing Die bonding  Preparation of film]

The circularly cut die-bonding film was transferred to the dicing film prepared above through 5 kgf / cm &lt; 2 &gt; to prepare a dicing die-bonding film.

[Evaluation method of film]

(1) Back surface adhesion evaluation

An 8-inch silicon wafer was laminated with a die bonding film for 10 seconds on a tape mounter (DS hole) set at 40 占 폚. The backside adhesion was evaluated by the presence or absence of voids after lamination. Here, those having no voids were evaluated as good, and those having at least one void were evaluated as defective.

(2) Adhesion after UV irradiation

The 1-inch tape of 3M was attached to the above die-bonding film, and 180 DEG peel was measured under the conditions of a peeling speed of 5 mm / sec by irradiating 300 mJ of UV onto the dicing tape surface. Those having an adhesive strength of less than 20 g / 25 mm were satisfactory, and those having a cohesion strength of 20 g / 25 mm or more were treated as defective.

(3) Filling property

A PCB having a height difference of 10 mu m was used as a substrate. The die bonding film (20 탆) was cut into 25 mm × 25 mm and laminated with a chip at 60 ° C. in a tape mounter (DS hole). The chip with the PCB and the die bonding was pressed at 130 캜 under a pressure of 1.5 kg for 1 second. The loading rate was calculated by calculating the flow amount of the film flowing between the circuit patterns of the PCB. If the fill rate is 50% or more, the result is good. If the fill rate is less than 50%, the defect is treated.

(4) Package reliability

The die bonding film was laminated on the comb pattern coupon, and each electrode was connected to the HAST test equipment, and the experiment was conducted under conditions of 130 ° C and 85% RH and 15V. The electrical resistance was checked, and the time required to reach the moment when the resistance was abruptly reduced was treated as pass or below failure for 168 hours or more.

Example 1 Example 2 Comparative Example 1 Comparative Example 2 Backside adhesion Good Good Good Good Adhesion after UV
(g / 25 mm) Good Good Good Good Fillability Good Good Good Good Package reliability Pass Pass Fail Fail

As shown in the above Examples and Comparative Examples, the adhesive composition comprising the porous pillar including the open pores is excellent in both the back adhesion, the adhesive force after UV irradiation, and the filling property, (HAST resistance) even under the conditions of high temperature and humidity, including a component capable of capturing copper ions.

Claims (13)

A porous filler including an epoxy resin, a thermoplastic resin, a curing agent, and an open hole,
Wherein the pore of the porous filler is substituted with a functional group containing at least one functional group selected from the group consisting of a carboxyl group, an amine group, a nitrile group, a thiol group, an imine group, an ether group and a sulfonic acid group.
The method according to claim 1,
Wherein the porous filler comprises a void having an average diameter of 0.5 to 200 nm.
The method according to claim 1,
Wherein the average particle diameter of the porous filler is 20 占 퐉 or less.
delete delete The method according to claim 1,
Wherein the porous filler is alumina or a layered silicate.
The method according to claim 6,
Wherein the alumina is at least one selected from the group consisting of a-alumina, gamma -alumina, diaspore, beauit, hydrazilite and bayerite.
The method according to claim 6,
Wherein the layered silicate is selected from the group consisting of mica, fluoromica, pyrophyllite, glauconite, vermiculite, sepiolite, allophone, imogolite, talc, ilite, soytite, sbinpodite, kaolinite, , Montmorillonite, sodium montmorillonite, montmorillonite, montmorillonite, montmorillonite, montmorillonite, montmorillonite, montmorillonite, montmorillonite, montmorillonite, montmorillonite, montmorillonite, montmorillonite, montmorillonite , Magnesium montmorillonite, calcium montmorillonite, nontronite, bentonite, bederite, hectorite, sodium hectorite, saponite, saponite, fluoroheptolite, stevensite, volcanosqueite, magadiite, Strontium, strontium, hydrotalcite, smectite and smectite type strontium silicate. Or more adhesive composition.
The method according to claim 1,
Wherein the porous filler comprises 0.5 to 100 parts by weight per 100 parts by weight of the thermoplastic resin.
The method according to claim 1,
Wherein the adhesive composition further comprises at least one component selected from the group consisting of a curing accelerator, an inorganic filler, and a coupling agent.
A base film; An adhesive portion formed on the base film; And a bonding portion formed on the adhesive portion and containing a cured product of the adhesive composition according to any one of Claims 1 to 3 and 6 to 10.
The semiconductor wafer according to claim 11, wherein a bonding portion of the dicing die bonding film is attached to one surface of the wafer, and the base film of the dicing die bonding film is fixed to the wafer ring frame.
A wiring board; An adhesive layer attached to the chip mounting surface of the wiring board and including a cured product of the adhesive composition according to any one of claims 1 to 3 and 6 to 10; And a semiconductor chip mounted on the adhesive layer.