KR101818453B1 - Liquid crystal display device and method for fabricating the same - Google Patents

Abstract

The present invention relates to a liquid crystal display device having a jumper portion to which first and second conductive layers are connected through one contact hole and a method of manufacturing the same, wherein the liquid crystal display device of the present invention comprises: a substrate; A first conductive layer formed on the substrate; A first insulating layer formed on the entire surface of the substrate including the first conductive layer; An etch stopper formed on the first insulating film so as to overlap with a partial region of the first conductive layer; A second conductive layer formed on the etch stopper; A second insulating layer formed on the entire surface of the first insulating layer including the second conductive layer; The first insulating layer and the first conductive layer are selectively removed to expose a portion of the substrate and the second insulating layer and the second conductive layer are selectively removed so that the side surfaces of the second conductive layer and the etch- A contact hole exposing the stopper; And a bridge conductive layer formed on the entire surface of the second insulating layer including the contact hole to connect the first and second conductive layers.

Description

TECHNICAL FIELD [0001] The present invention relates to a liquid crystal display device and a method of manufacturing the same,

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a liquid crystal display device, and more particularly, to a liquid crystal display device having a structure in which a plurality of conductive layers and an insulating layer are stacked.

(PDP), Electro Luminescent Display (ELD), Vacuum Fluorescent (VFD), and the like have been developed in recent years in response to the demand for display devices. Display) have been studied, and some of them have already been used as display devices in various devices.

Among them, liquid crystal display devices are mostly used in place of CRT (Cathode Ray Tube) for the purpose of portable image display devices because of their excellent image quality, light weight, thinness and low power consumption, But also various kinds of monitors such as a television and a computer monitor receiving and displaying a broadcast signal in addition to the use of the same mobile type.

Such a liquid crystal display device includes a color filter array substrate on which color filters are formed, a thin film transistor array substrate on which thin film transistors are formed, and a liquid crystal layer formed between the color filter array substrate and the thin film transistor array substrate.

The color filter array substrate is formed with a color filter for color implementation and a black matrix for light leakage prevention. A plurality of pixel electrodes to which data signals are individually supplied are formed on the thin film transistor array substrate. Further, a thin film transistor for driving a plurality of pixel electrodes individually, a gate line for controlling the thin film transistor, and a data line for supplying a data signal to the thin film transistor are formed on the thin film transistor array substrate.

At this time, the thin film transistor array substrate has a structure in which a plurality of conductive layers and an insulating layer are laminated. For example, the thin film transistor array substrate includes a first conductive layer forming a gate line and a gate electrode, a second conductive layer forming a data line, a source electrode and a drain electrode, and a third conductive layer forming a pixel electrode, And has a structure in which the insulating layers are stacked with each other interposed therebetween. The thin film transistor array substrate has a plurality of jumping portions for connecting the first conductive layer and the second conductive layer by using the third conductive layer.

Specifically, the liquid crystal display device forms various signals by using a small number of conductive layers, but it is impossible to cross-form the first and second conductive layers in the same layer. Therefore, in the liquid crystal display device, the contact hole is formed in the insulating film or the protective film formed on the first and second conductive layers, and the jumping for connecting the first and second conductive layers using the third conductive layer formed along the contact hole .

1 is a plan view showing a general jumper formed on a thin film transistor array substrate.

1, the jumping portion includes a first contact hole 11 penetrating at least two insulating films (not shown) to expose the first conductive layer 10, and a second contact hole 11 penetrating at least one insulating film (not shown) And a bridge conductive layer 14 connecting the first and second conductive layers 10 and 12 via a second contact hole 13 exposing the conductive layer 12. [

If the jumping portion has two first and second contact holes 11 and 13 as described above, a tolerance compensation region of about 10 μm is generally required between the first and second contact holes 11 and 13. This increases the area of the jumping portion.

SUMMARY OF THE INVENTION Accordingly, the present invention has been made keeping in mind the above problems occurring in the prior art, and it is an object of the present invention to provide a liquid crystal display device capable of improving resistance characteristics and miniaturization by forming a jumping portion having one contact hole, There is a purpose.

According to an aspect of the present invention, there is provided a liquid crystal display comprising: a substrate; A first conductive layer formed on the substrate; A first insulating layer formed on the entire surface of the substrate including the first conductive layer; An etch stopper formed on the first insulating film so as to overlap with a partial region of the first conductive layer; A second conductive layer formed on the etch stopper; A second insulating layer formed on the entire surface of the first insulating layer including the second conductive layer; The first insulating layer and the first conductive layer are selectively removed to expose a portion of the substrate and the second insulating layer and the second conductive layer are selectively removed so that the side surfaces of the second conductive layer and the etch- A contact hole exposing the stopper; And a bridge conductive layer formed on the entire surface of the second insulating layer including the contact hole to connect the first and second conductive layers.

The contact hole exposes the etch stopper in a region overlapping the first conductive layer.

The first conductive layer is a gate conductive layer, and the second conductive layer is a source and drain conductive layer.

The bridge conductive layer is a common electrode.

The etch stopper and the bridge conductive layer are formed of a transparent conductive material.

According to another aspect of the present invention, there is provided a method of manufacturing a liquid crystal display device including: forming a first conductive layer on a substrate; Forming a first insulating layer on the entire surface of the substrate including the first conductive layer; Forming an etch stopper on the first insulating layer to overlap an area of the first conductive layer; Forming a second conductive layer on the etch stopper; Forming a second insulating layer on the entire surface of the first insulating layer including the second conductive layer; The first insulating layer and the first conductive layer are selectively removed to expose a portion of the substrate and the second insulating layer and the second conductive layer are selectively removed so that the side surfaces of the second conductive layer and the etch- Forming a contact hole exposing the stopper; And forming a bridge conductive layer for connecting the first and second conductive layers to the entire surface of the second insulating layer including the contact hole.

The forming of the contact hole exposes the etch stopper in a region overlapping the first conductive layer.

The step of forming the contact hole does not remove the first conductive layer in the region overlapping with the etch stopper.

The first conductive layer is a gate conductive layer, and the second conductive layer is a source and drain conductive layer.

The bridge conductive layer is a common electrode.

The liquid crystal display of the present invention and its manufacturing method as described above have the following effects.

First, since the gate conductive layer in the region overlapping the pixel electrode is not removed, the contact area between the bridge conductive layer and the gate conductive layer is increased to improve the contact characteristics and decrease the contact resistance.

Second, since the source and drain conductive layers and the gate conductive layer are connected to each other through one contact hole, it is possible to prevent the size of the jumping portion from increasing, thereby miniaturizing the liquid crystal display device.

1 is a plan view showing a general jumping part;
2 is a plan view showing a liquid crystal display device of the present invention.
FIG. 3A is a plan view showing the jumping portion of the present invention. FIG.
FIG. 3B is a cross-sectional view taken along line I-I 'of FIG. 3A; FIG.
4A to 4F are process sectional views showing a method of manufacturing a liquid crystal display device of the present invention.
5 is a table comparing the resistance of the jumping portion of the present invention with the general jumping portion formed on the thin film transistor array substrate.

BRIEF DESCRIPTION OF THE DRAWINGS The accompanying drawings, which are incorporated in and constitute a part of the specification, illustrate embodiments of the invention and, together with the description, serve to explain the principles of the invention.

2 is a plan view showing a liquid crystal display device of the present invention. 3A is a plan view showing a jumping portion of the present invention, and FIG. 3B is a sectional view taken along line I-I 'of FIG. 3A.

2, the liquid crystal display device of the present invention includes a gate drive IC (Integrated Circuit) 2 for sequentially driving a plurality of gate lines GL1 to GLm of an image display unit 3, an image display unit 3, And a data driving IC (1) for supplying data to a plurality of data lines (DL1 to DLn) of the image display unit (3). Although not shown, the gate drive IC 2 and the data drive IC 1 can be collectively arranged at one side edge of the image display section 3. [

Specifically, a pixel region is defined in a matrix form in which a plurality of gate lines GL1 to GLm and data lines DL1 to DLn intersect each other, and gate lines GL1 to GLm and a data line A thin film transistor (TFT) is formed in an intersection region of the data lines DL1 to DLn.

The thin film transistor supplies the data signals of the data lines DL1 to DLn to the pixel electrodes in response to the scan signals of the gate lines GL1 to GLm. Then, a fringe field switching (FFS) is formed between the pixel electrode to which the data signal is supplied and the common electrode to which the common voltage is supplied, thereby displaying an image by controlling the liquid crystal in pixel units.

Since the fringe field-mode liquid crystal display device can precisely control the liquid crystal molecules, the liquid crystal display device realizes a 180 ° wide viewing angle in up, down, left, and right directions and has high color contrast without divergence in the diagonal direction. Further, the line width of the black matrix can be reduced by the structure in which the common electrode is covered on the data lines, thereby improving the aperture ratio.

The gate driving IC 2 includes a plurality of stages including shift registers for driving the plurality of gate lines GL1 to GLm, and sequentially drives a plurality of gate lines in response to a gate start pulse. The data driving IC 1 includes a shift register and a latch. The data driving IC 1 shifts data bits in response to a data shift clock and outputs one line of data to a plurality of data lines DL1 to DLn ).

As described above, the liquid crystal display device of the present invention incorporates the gate drive IC 2 formed of a plurality of thin film transistors in a thin film transistor array substrate using amorphous silicon. Since the gate driving IC 2 is formed by a plurality of mask processes together with the image display unit of the thin film transistor array substrate, at least three conductive layers are stacked with the insulating films interposed therebetween. In the gate drive IC 2, there are many jumper portions in which different conductive layers are connected through the bridge conductive layer.

The jumping portion of the present invention includes a bridge conductive layer 160 which is a third conductive layer connecting the gate conductive layer 110 which is a first conductive layer protruded from a plurality of thin film transistors and the source and drain conductive layer 140 which is a second conductive layer ). In this case, the jumping portion is not limited to being connected to a plurality of thin film transistors, and may be applied to any structure in which the first conductive layer and the second conductive layer are connected through the third conductive layer on the thin film transistor array substrate.

3A and 3B, the jumping portion of the present invention includes a substrate 100, a gate conductive layer 110 formed on the substrate 100, and a gate conductive layer 110 formed on the entire surface of the substrate 100 including the gate conductive layer 110, A gate insulating layer 120 formed on the gate insulating layer 120, a pixel electrode 130 formed on the gate insulating layer 120 to partially overlap the gate conductive layer 110, a source and drain conductive layer 140 formed on the pixel electrode 130, The gate insulating layer 120, the passivation layer 150 and the gate conductive layer 110 formed on the entire surface of the gate insulating layer 120 including the source and drain conductive layers 140, A contact hole 150h exposing a side surface of the source and drain conductive layer 140 and the pixel electrode 130 and a contact hole 150h exposing a portion of the source and drain conductive layer 140 and the source and drain conductive layer 140, The gate conductive layer 110 and the source and drain are formed on the entire surface of the passivation layer 150 including the hole 150h. It comprises a conductive bridge layer 160 for connecting the layer 140.

In this case, the gate conductive layer 110 is formed on the same layer as the gate lines (GL1 to GLm in FIG. 2) and is protruded from a thin film transistor (not shown). The thin film transistor includes a gate electrode, a gate insulating film 120 And an active layer overlapped with the gate electrode, and source and drain electrodes formed on the active layer and spaced apart from each other by a predetermined distance.

The pixel electrode 130 is connected to the drain electrode of the thin film transistor and is formed of indium tin oxide (ITO), indium zinc oxide (IZO), tin oxide (TO), indium tin zinc oxide (Indium Tin Zinc Oxide), and the like. The contact hole 150h is not etched by an etchant and serves as an etch stopper when forming the contact hole 150h. The bridge conductive layer 160 is a common electrode and the bridge conductive layer 160 is also formed of a transparent conductive material like the pixel electrode 130.

As described above, since the common jumping portion connects the gate conductive layer and the source and drain conductive layers through the first contact hole exposing the gate conductive layer and the second contact hole exposing the source and drain conductive layers, The area of the jumping portion becomes larger.

The jumping portion of the present invention has a gate conductive layer 110 and a source and drain conductive layer 140 through a contact hole 150h for exposing the substrate 100 and a part of the pixel electrode 130 at the same time And a region where the pixel electrode 130 overlaps with the gate conductive layer 110 is exposed. Particularly, in the jumping portion, the pixel electrode 130 and the gate conductive layer 110 are partially overlapped with each other with the gate insulating film 120 interposed therebetween. Therefore, when the contact hole 150h is formed, the gate conductive layer 110 in the region overlapping the pixel electrode 130 remains unetched, so that the contact area between the bridge conductive layer 160 and the gate conductive layer 110 is .

For example, when the pixel electrode 130 does not overlap a part of the gate conductive layer 110, the edge of the gate conductive layer 110 is removed to form the bridge conductive layer 160 when the contact hole 150h is formed, And the gate conductive layer 110 are reduced, thereby deteriorating the contact characteristics.

The pixel electrode 130 is formed so as to overlap a part of the gate conductive layer 110 and the gate conductive layer 110 in the region overlapping the pixel electrode 130 when forming the contact hole 150h Can be prevented from being removed. As a result, the contact area between the bridge conductive layer 160 and the gate conductive layer 110 is widened, thereby improving the contact characteristics and reducing the contact resistance. In addition, the source and drain conductive layers 140 and the gate conductive layer 110 are connected to each other through one contact hole 150h, thereby making it possible to prevent the size of the jumping portion from increasing.

Hereinafter, a method of manufacturing the liquid crystal display device of the present invention will be described in detail.

4A to 4F are cross-sectional views illustrating a method of manufacturing a liquid crystal display device according to the present invention.

Meanwhile, although the jumping portion is performed at the same time as the thin film transistor forming process, the forming method of the thin film transistor is omitted in FIGS. 4A to 4F and only the forming method of the jumping portion will be described.

4A, a method of manufacturing a liquid crystal display of the present invention includes depositing a first conductive layer on a substrate 100, patterning the first conductive layer by a photolithography process to form a gate conductive layer 110, And a gate insulating layer 120 is formed on the entire surface of the substrate 100 including the gate conductive layer 110.

4B, a second conductive layer is deposited on the gate conductive layer 110 and then patterned to form the pixel electrode 130. Referring to FIG. At this time, the pixel electrode 130 is formed to overlap with a part of the gate conductive layer 110, which prevents the edge of the gate conductive layer 130 from being etched when forming the contact hole, Thereby improving the contact characteristics of the layer 110 and reducing the contact resistance.

4C, a source and drain conductive layer 140 is formed by depositing a third conductive layer on the pixel electrode 130 and patterning the same to form a source and drain conductive layer 140 as shown in FIG. A protective film 150 is formed on the entire surface of the gate insulating film 120 including the gate insulating film 120.

4E, the protective layer 150, the gate insulating layer 120, and the gate conductive layer 110 are selectively removed to expose a part of the substrate 100, and the protective layer 150 and the source and drain conductive layers 140, The contact hole 150h exposing the pixel electrode 130 in the region overlapping the gate conductive layer 110 is formed. At this time, since the pixel electrode 130 serves as an etch stopper, a part of the gate conductive layer 110 overlapping the pixel electrode 130 is not removed.

4F, a fourth conductive layer is deposited on the entire surface of the passivation layer 150 including the contact hole 150h to connect the gate conductive layer 110 and the source and drain conductive layer 140, and the fourth conductive layer is patterned to form a bridge The conductive layer 160 is formed.

That is, the edge of the gate conductive layer 110 corresponding to the pixel electrode 130 is not etched because the pixel electrode 130 and a part of the gate conductive layer 110 are overlapped with each other.

Accordingly, all the side surfaces of the gate conductive layer 110 are exposed on the side surface of the contact hole 150h and a part of the pixel electrode 130 and the substrate 100 are exposed on the bottom surface of the contact hole 150h, Since the edges of the gate conductive layer 110 overlapping with the gate conductive layer 110 are also connected to the bridge conductive layer 160, the contact characteristics between the bridge conductive layer 160 and the gate conductive layer 110 are improved and the contact resistance is reduced. In addition, the size of the jumping portion can be prevented from becoming large due to the connection of the source and drain conductive layer 140 and the gate conductive layer 110 through one contact hole.

The jumping unit of the present invention can be applied to all structures where signals cross each other. Typically, the jumping unit is applied to a structure for connecting a data line and a data pad, a structure for connecting a gate line and a gate pad, a GIP (Gate In Panel) structure, .

Therefore, when the first and second conductive layers are connected to each other by using the connection wiring formed of the third conductive layer, the liquid crystal display device can be miniaturized by applying the jumping portion of the present invention having one contact hole to the liquid crystal display device .

Particularly, in the GIP (Gate In Panel) structure in which the gate driving IC is directly mounted in the thin film transistor array substrate, the area of the jumping portion 200 existing inside the panel is reduced, thereby miniaturizing the liquid crystal display device. The data driving IC applying the jumping portion of the present invention can miniaturize the gate driving IC by electrically connecting the data line and the data pad through one contact hole and also advantageously downsizing the gate driving IC.

FIG. 5 is a table comparing resistances of a general jumping portion formed on a thin film transistor array substrate and a jumping portion of the present invention. Here, a general jumping portion is a jumping portion having a first second contact hole as shown in FIG.

Referring to FIG. 5, the average contact resistance of the general jumping portion is 117.63, whereas the average contact resistance of the jumping portion having one contact hole is 99.63 as in the present invention. That is, the contact resistance of the jumping portion of the present invention is reduced by about 10% or more, and the variation of the contact resistance is also reduced by the general jumping portion.

That is, according to the present invention, not only the contact property of the jumping portion is improved, but also the contact resistance is reduced, and the size of the jumping portion is prevented from becoming large, thereby making it possible to miniaturize the liquid crystal display device.

It will be apparent to those skilled in the art that various modifications and variations can be made in the present invention without departing from the spirit or scope of the invention. Will be clear to those who have knowledge of.

100: substrate 110: gate conductive layer
120: gate insulating film 130: pixel electrode
140: source and drain conductive layer 150:
150h: Contact hole 160: Bridge conductive layer

Claims (10)

Board;
A first conductive layer formed on the substrate;
A first insulating layer formed on the entire surface of the substrate including the first conductive layer;
An etch stopper formed on the first insulating film so as to overlap with a partial region of the first conductive layer;
A second conductive layer formed on the etch stopper;
A second insulating layer formed on the entire surface of the first insulating layer including the second conductive layer;
The first insulating layer and the first conductive layer are selectively removed to expose a portion of the substrate and the second insulating layer and the second conductive layer are selectively removed so that the side surfaces of the second conductive layer, A contact hole exposing the stopper; And
And a bridge conductive layer formed on the entire surface of the second insulating film including the contact hole to connect the first and second conductive layers. The method according to claim 1,
And the contact hole exposes the etch stopper in a region overlapping with the first conductive layer. The method according to claim 1,
Wherein the first conductive layer is a gate conductive layer and the second conductive layer is a source and a drain conductive layer. The method according to claim 1,
And the bridge conductive layer is a common electrode. The method according to claim 1,
Wherein the etch stopper and the bridge conductive layer are formed of a transparent conductive material. Forming a first conductive layer on the substrate;
Forming a first insulating layer on the entire surface of the substrate including the first conductive layer;
Forming an etch stopper on the first insulating layer to overlap an area of the first conductive layer;
Forming a second conductive layer on the etch stopper;
Forming a second insulating layer on the entire surface of the first insulating layer including the second conductive layer;
The first insulating layer and the first conductive layer are selectively removed to expose a portion of the substrate and the second insulating layer and the second conductive layer are selectively removed so that the side surfaces of the second conductive layer and the etch- Forming a contact hole exposing the stopper; And
And forming a bridge conductive layer for connecting the first and second conductive layers to the entire surface of the second insulating film including the contact hole. The method according to claim 6,
Wherein the step of forming the contact hole exposes the etch stopper in a region overlapping with the first conductive layer. 8. The method of claim 7,
Wherein the step of forming the contact hole does not remove the first conductive layer in a region overlapping with the etch stopper. The method according to claim 6,
Wherein the first conductive layer is a gate conductive layer and the second conductive layer is a source and a drain conductive layer. The method according to claim 6,
Wherein the bridge conductive layer is a common electrode.

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