KR101790625B1 - Film forming apparatus capable of adjusting forming thickness - Google Patents

Film forming apparatus capable of adjusting forming thickness Download PDF

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KR101790625B1
KR101790625B1 KR1020160031688A KR20160031688A KR101790625B1 KR 101790625 B1 KR101790625 B1 KR 101790625B1 KR 1020160031688 A KR1020160031688 A KR 1020160031688A KR 20160031688 A KR20160031688 A KR 20160031688A KR 101790625 B1 KR101790625 B1 KR 101790625B1
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film thickness
film forming
vacuum chamber
film
opening
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KR1020160031688A
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Korean (ko)
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KR20160115731A (en
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안경준
정성훈
김상진
김성대
장근원
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(주)에스엔텍
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    • H01L21/203—
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/24—Vacuum evaporation
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/54—Controlling or regulating the coating process
    • C23C14/542—Controlling the film thickness or evaporation rate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02296—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer
    • H01L21/02299—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer pre-treatment
    • H01L21/02312—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer pre-treatment treatment by exposure to a gas or vapour
    • H01L21/02315—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer pre-treatment treatment by exposure to a gas or vapour treatment by exposure to a plasma
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/02631—Physical deposition at reduced pressure, e.g. MBE, sputtering, evaporation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67242—Apparatus for monitoring, sorting or marking
    • H01L21/67253—Process monitoring, e.g. flow or thickness monitoring

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  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Materials Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Plasma & Fusion (AREA)
  • Physical Vapour Deposition (AREA)

Abstract

The present invention relates to a film forming apparatus for depositing a film on a surface of a base material in which a base material is located on one side of an opening in a vacuum chamber and a material holding portion for holding a film forming material on the other side is scattered in a vapor phase by a plasma beam, A plurality of film thickness regulating plates arranged so as to reciprocate in a direction to increase or decrease an opening area of the opening; And a driving unit for driving each of the film thickness control plates outside the vacuum chamber.
Thereby, a film forming apparatus capable of uniformly controlling the film thickness by increasing or decreasing the opening area between the substrate and the film forming material in the vacuum holding state is provided.
In addition, there is provided a film forming apparatus capable of precisely controlling the increase and decrease of the opening area between the substrate and the film forming material.
Also, a film-forming apparatus capable of maximizing productivity by allowing the film thickness uniformity to be maintained for a long time is provided.

Description

[0001] The present invention relates to a film forming apparatus capable of adjusting a film thickness,

The present invention relates to a film forming apparatus, and more particularly, to a film forming apparatus capable of adjusting a film thickness by increasing or decreasing an opening area between an object to be film-formed and a film forming material in a vacuum holding state.

Physical vapor deposition (PVD) exists as a method of forming a predetermined film on the surface of an object (hereinafter referred to as "substrate") such as a substrate. In this physical vapor deposition method, a deposition material is scattered in a vacuum chamber using a method such as heating, plasma irradiation, or ion irradiation to form a film in which a film forming material scattered on the substrate surface is deposited.

When the concentration distribution of the film forming material is generated in the vacuum chamber in the PVD method, the film forming material can not reach uniformly on the surface of the substrate, resulting in a problem that the homogeneous film forming becomes impossible.

In order to solve such a problem, Japanese Unexamined Patent Application Publication No. 2003-166055 discloses a device capable of adjusting a film thickness distribution formed on a substrate by providing a shutter for increasing or decreasing the opening area between the substrate and the film forming material, have.

On the other hand, as a film forming apparatus for forming a film on a substrate, there is a film forming apparatus for sequentially forming a film on the surface of transferred substrates by scattering the film forming material disposed opposite to the substrate while continuously transferring the substrates do.

Such a film forming apparatus has a structure in which a film thickness regulating plate is provided in an opening portion between a base material and a film forming material in a vacuum chamber to change the opening area of the opening portion to change the exposure time of the substrate relative to the film forming material to be scattered, It is possible to eliminate the unevenness of the film thickness.

It is preferable for the film forming apparatus to perform the film forming process for a large number of substrates for as long as possible while maintaining the vacuum state inside the vacuum chamber for improving the productivity.

However, if the film forming process is continued for a large number of substrates over a long period of time, even if a film thickness regulating plate is provided, the film thickness distribution on the substrate becomes uneven over time.

Generally, when the substrate is transported at a position facing the film forming material provided inside the vacuum chamber, the film forming speed is slow at the portion far from the film forming material on the surface of the substrate, and the film forming speed is fast at the near portion.

A film thickness regulating plate is used for correcting the film thickness irregularity due to scattering of the film forming speed. However, when the film forming process is continued for many substrates over a long period of time, the film forming rate on the substrate remote from the film forming material gradually And the film thickness distribution on the substrate surface gradually becomes non-uniform.

In this case, since the vacuum state of the vacuum chamber is released and the film thickness regulating plate is set again to return the film forming apparatus to the original state, the film forming process can not be continuously performed for a long time.

Therefore, an object of the present invention is to provide a film forming apparatus capable of uniformly controlling the film thickness by increasing or decreasing the opening area between the substrate and the film forming material in the vacuum holding state.

And a film forming apparatus capable of precisely controlling the increase and decrease of the opening area between the substrate and the film forming material.

It is another object of the present invention to provide a film forming apparatus capable of maximizing productivity by allowing the film thickness uniformity to be maintained for a long time.

In order to achieve the above object, the present invention provides a vacuum chamber comprising: a vacuum chamber having a base material disposed on one side with an opening therebetween, a material holding unit having a deposition material on the other side, A film thickness regulating plate provided on an opening of the vacuum chamber and controlling the degree of scattering of the film forming material onto the substrate by increasing or decreasing an opening area of the opening, The film forming apparatus comprising:

In a preferred embodiment, the film thickness regulating plate is composed of a plurality of film thickness regulating plates arranged so as to reciprocate in the direction of increasing or decreasing the opening area.

In a preferred embodiment, the apparatus further includes a driving unit for driving each of the film thickness regulating plates outside the vacuum chamber.

In a preferred embodiment of the present invention, the opening is formed between the base material and the material holding portion, and the guide groove is formed in a number corresponding to the film thickness regulating plate in a direction corresponding to the reciprocating direction of the film thickness regulating plate And a guide corresponding to the guide groove is formed in each of the film thickness regulating plates so as to be capable of transmitting driving force from the driving unit.

In one embodiment of the present invention, the driving unit includes: an adjustment knob that is rotatably disposed outside the vacuum chamber at a number corresponding to the film thickness control plate; and a control knob that rotates the adjustment knob, A feed screw connected to the guide, and a gear member that meshes with one end of the rotation shaft of the adjustment knob and one end of the feed screw adjacent thereto, and converts rotational motion into linear motion.

The driving unit may include a step motor installed outside the vacuum chamber at a number corresponding to the film thickness regulating plate and a conveying unit connected to the guide to transmit the rotational motion of the step motor to the linear motion of the film thickness regulating plate. And a gear member for rotating the end portion of the rotation shaft of the step motor and the end portion of the transfer screw adjacent thereto to rotate and convert rotational motion into linear motion.

In a preferred embodiment, the substrate is transported through the opening, the film thickness regulating plates are arranged in a direction orthogonal to the transport direction of the substrate and are provided so as to be reciprocatable in the transport direction of the substrate, Respectively.

The present invention further provides a display panel, a touch panel, an LED device, or a solar cell panel having a film formation layer formed by the film formation apparatus.

According to the present invention, there is provided a film forming apparatus capable of uniformly controlling the film thickness by increasing or decreasing the opening area between the substrate and the film forming material in the vacuum holding state.

In addition, there is provided a film forming apparatus capable of precisely controlling the increase and decrease of the opening area between the substrate and the film forming material.

Also, a film-forming apparatus capable of maximizing productivity by allowing the film thickness uniformity to be maintained for a long time is provided.

1 is a side sectional view of a film forming apparatus according to the present invention,
FIG. 2 is a perspective view of the film thickness adjusting means region of FIG. 1,
Fig. 3 is an enlarged view of the film thickness regulating plate area of Fig. 2,
Fig. 4 is an enlarged view of the driving section area of Fig. 2; Fig.
5 to 7 are views for explaining a beam guide installing means of a film forming apparatus according to an embodiment of the present invention,

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS The present invention will now be described in detail with reference to the accompanying drawings. In this case, the film forming apparatus according to the present invention will be described by taking an ion plating type as an example, but it goes without saying that the technical idea of the present invention can be applied to various types of film forming apparatus using PVD method.

1, the film forming apparatus 1 according to the present invention includes a vacuum chamber 10 in which a base material S is located at one side of the inside thereof while forming a vacuum space, A material holding portion 20 provided inside the vacuum chamber 10 at a spaced position and a plasma beam generating means 30 for irradiating the plasma beam P toward the film forming material M of the material holding portion 20 , And a film thickness adjusting means (40) for maintaining the film thickness of the film forming layer formed on the surface of the substrate (S) uniformly while maintaining the vacuum state of the vacuum chamber (10).

Further, the present invention can further provide a substrate having a film formation layer formed by the film formation apparatus 1 separately from the film formation apparatus (1).

The substrate may be, for example, a display panel, a touch panel, an LED device (panel), or a solar cell panel, and the film formation layer may be an electrode layer, an antireflection layer, a protective layer, or the like.

The vacuum chamber 10 may include a substrate conveying path 11 for conveying the substrates S continuously. At this time, a part of the substrate transfer path 11 at a position opposite to the material holding portion 20 can serve as a film forming space 13 in which a film forming layer is formed on the substrate S. Between the film forming space 13 and the material holding portion 20, an opening 42 whose opening area is adjusted by the film thickness adjusting means 40 is formed.

The film forming process performed in the vacuum chamber 10 may be a process of forming a SiO 2 or ITO film on the surface of the substrate S or may be a process of forming a film forming layer of various materials on the surface of the substrate S have.

The vacuum chamber 10 is provided with a beam passage opening 15 so that the plasma beam P from the plasma beam generating means 30 is irradiated toward the film forming material M of the material holding portion 20.

An atmosphere gas suitable for the film formation process can be supplied from the gas supply unit (not shown) inside the vacuum chamber 10, and the vacuum degree can be maintained by the vacuum adjustment unit. In addition, the vacuum chamber 10 may be made of a conductive material and grounded.

The material holding portion 20 has a hearth 21 for holding the film forming material M. [ The harness 21 is connected to a power supply unit (not shown), which is not shown so as to be kept at a constant potential with respect to the vacuum chamber 10 which is the ground potential, in order to draw the plasma beam P from the plasma beam generating means 30 into the harness 21. [ .

The solid-phase film material M is mounted on the haul 21 separately or continuously by means of a material supply device (not shown) in the haul 21, .

The solid film forming material (M) attached to and held in the hearth (21) is heated by irradiation with the plasma beam (P), and the tip portion toward the substrate (S) evaporates and sprays toward the substrate (S) side in the form of particles.

The film forming material particles to be scattered are ionized by the plasma and moved to the film forming space 13 to be attached to the surface of the substrate S. [

The solid-phase film material (M) mounted on the haul (21) continues to be pushed in the direction toward the substrate (S) side while being heated and evaporated by the plasma beam (P)

The material retaining portion 20 may have an annular beam guide 23 as a secondary anode around the hearth 21 with the hearth 21 as the main anode 21. [ The beam guide 23 is for directing the plasma, and may be arranged in various forms including a coil and a permanent magnet around the haul 21. At this time, the permanent magnet performs precisely focusing control of the direction of the plasma incident on the haul 21 in the current flow of the coil.

The material holding portion 20 adjusts the relative position of the beam guide 23 with respect to the haul 21 by adjusting the position where the beam guide 23 is attached to the other side of the inside of the vacuum chamber 10 And a beam guide installing means (50) for adjusting the position.

5 to 7, the beam guide installing means 50 is provided on the base plate 60 of the vertically arranged vacuum chamber 10 and is provided on the rear surface of the housing 23a of the beam guide 23 A vertical support portion 51 for supporting the beam guide 23 on the base plate 60 so that the beam guide 23 can be closely contacted with the beam guide 23; And a position setting unit 56 for adjusting an installation position of the beam guide 23.

However, the base plate 60 is not separately provided, and the housing 23a can be directly attached to the other inner surface of the vacuum chamber 10. [

The vertical support part 51 includes a support flange 52 formed at the lower end of the housing 23a of the vertically installed beam guide 23 and a fastening member 52 for fastening the support flange 52 to the base plate 60 55). A horizontal slot 53 is formed horizontally in the support flanges 52 and a vertical slot 63 is formed in the corresponding base plate 60. The fastening member 55 is horizontally extended 53 and the vertical elongated hole 63 while coupling the support flange 52 and the base plate 60 to each other. Here, the formation positions of the horizontal elongated hole 53 and the vertical elongated hole 63 may be reversed.

The position setting unit 56 may be provided in plural around the housing 23a of the beam guide 23. The position setting unit 56 includes a bar supporting block 57 supported by the base plate 60, And a position control bar 58 supported by the bar support block 57 so as to be reciprocatable in a direction toward the center of the support block 57.

A guide hole (not shown) having a female threaded portion (not shown) through which the position adjusting bar 48 is inserted is formed in the bar support block 57. On the outer peripheral surface of the position adjustment bar 58, And a male screw portion 58a corresponding to the male screw portion 58a. At the end of the position adjustment bar 58 facing the beam guide 23, a contact portion 58b is formed which is in contact with and released from the beam guide 23. [

The film forming apparatus according to the present invention having such a configuration can be constructed such that the beam guide 23 is first installed in the vacuum chamber 10 so as to vertically position the beam guide 23 in the peripheral region of the haul 21, To the base plate (60).

At this time, the beam guide 23 can be moved to correspond to a predetermined focusing position in a state where the fastening member 55 is assembled with the horizontal slot 53 and the vertical slot 63, The beam guide 23 can be moved in the horizontal direction and the vertical slot 63 can move the beam guide 23 in the vertical direction so that the installation position of the beam guide 23 can be easily and primarily set.

Then, the installation position of the beam guide 23 can be precisely set using the position setting unit 56. [ The beam guide 23 having the first mounting position set by the vertical supporting part 51 can be slightly moved by the external force and the position adjusting part 58 of the positioning part 56 can be adjusted The position of the beam guide 23 can be precisely set by applying an external force while the contact portion 58b of the bar 58 contacts the beam guide 23. [

Then, when the fastening member 55 of the vertical support portion 51 is fully tightened, the beam guide 23 is vertically installed inside the vacuum chamber while being completely in contact with the base plate 60.

Thereby, even if the beam guide 23 is installed vertically, there is no possibility of sagging due to its own weight, and no flare is caused between the beam guide 23 and the base plate 60. Therefore, the gap in which the particles are deposited is not formed and the insulated state of the beam guide 23 can be maintained, thereby preventing the shot.

Further, in the process of installing the beam guide 23, the position of the beam guide 23 can be precisely adjusted by using the position setting unit 56 in a state where the beam guide 23 is vertically arranged using the vertical support unit 51 So that the focusing of the plasma beam can be accurately performed.

Thus, the film forming apparatus according to the present invention provides a beam guide installation structure optimized for a vertical film forming apparatus that performs a film forming process on a vertical substrate.

On the other hand, the plasma beam generating means 30 may be in the form of a pressure gradient, and its main body portion is provided in the region of the beam passage opening 15 of the vacuum chamber 10. The plasma generated in the plasma beam generating means 30 is directed to the inside of the vacuum chamber 10 and the haul 21 through the beam passage opening 15.

The constitution of the vacuum chamber 10, the material holding unit 20 and the plasma beam generating means 30 and the like are the same as those of the conventional ion plating type film forming apparatus 1 or other types of film forming apparatuses 1 using the PVD method, A detailed description thereof will be omitted. In the following, the film thickness adjusting means 40 will be described in more detail.

The film thickness adjusting means 40 provided in the film forming apparatus 1 according to the present invention includes an opening frame 41 for forming an opening 42 between the base material S and the material holding portion 20, A plurality of film thickness control plates 44 provided on the opening frame 41 so as to reciprocate in the direction of increasing or decreasing the opening area of the film thickness adjusting plate 44, (46).

The film thickness regulating plates 44 are arranged in a direction perpendicular to the conveying direction of the substrate S (hereinafter referred to as an 'orthogonal direction) As shown in Fig. 2 and 3, a number of guide grooves 43 corresponding to each of the film thickness regulating plates 44 in the orthogonal direction is provided in the opening frame 41 in correspondence with the conveying direction of the substrate S The film thickness regulating plate 44 includes a guide 45 which moves along the guide groove 43 with respect to each other. The guide 45 reciprocates along the guide groove 43 by the driving force transmitted from the driving unit 46 so that the film thickness control plate 44 connected to the guide 45 is reciprocated in the opening area increasing / decreasing direction.

The driving unit 46 converts the rotational motion into a linear motion to reciprocate the film thickness regulating plate 44. [ 4, the driving unit 46 includes an adjusting knob 47 provided to be rotatable outside the vacuum chamber 10 and corresponding to the film thickness adjusting plate 44, a control knob 47 A transfer screw 48 for transferring the rotational motion of the film thickness regulating plate 44 to the linear motion of the film thickness regulating plate 44 and the end of the rotation shaft of the adjusting knob 47 and the end of the transfer screw 48, And may include a gear member 49 for converting.

The driving unit 46 rotates the adjusting knob 47 outside the vacuum chamber 10 without breaking the vacuum of the vacuum chamber 10 in the process of performing the film forming process, The opening area of the opening 42 can be adjusted.

At this time, in order to precisely control the opening area of the opening 42, it is necessary to inscribe the opening numerical scale graduation pattern which can confirm the moving range of the film thickness regulating plate 44 according to the predetermined amount of rotation in the adjusting knob 47 desirable.

In some cases, the adjustment knob 47 may be replaced by a step motor (not shown) capable of controlling the rotation amount. In this case, a separate controller may be provided to automatically adjust the opening degree of the film thickness regulating plate 44 more precisely.

It goes without saying that the configuration of the driving unit 46 can be configured by using various components in addition to the above-described configurations within a range in which the opening degree of the film thickness regulating plate 44 can be adjusted outside the vacuum chamber 10 .

On the other hand, the opening degree adjustment of the opening portion 42 by the film thickness adjusting plates 44 is performed based on the arrangement direction of the film thickness adjusting plates 44 in the arranging direction corresponding to the portion near the film forming material M of the harness 21 The film thickness regulating plates 44 at the middle portion are made smaller in opening degree and the film thickness regulating plates 44 at both sides in the arranging direction corresponding to the portion far from the film forming material M of the hauls 21 have a shape . ≪ / RTI >

This is because the portion of the surface of the substrate S close to the film forming material M has a film forming speed which is fast and the film forming speed is slow. Therefore, as described above, the film thickness adjusting plates 44, The opening degree of the thickness adjusting plate 44 is appropriately adjusted so as to form a film having a uniform thickness on the entire surface of the substrate S. [

As described above, the film forming apparatus according to the present invention can adjust the film thickness uniformly by controlling the driving of the film thickness adjusting plate outside the vacuum chamber to increase or decrease the opening area between the substrate and the film forming material, And can be maintained for a long time, thereby maximizing the productivity.

In addition, since the film thickness regulating plates are arranged in a direction orthogonal to the conveying direction of the substrate, the degree of opening of each of the film thickness regulating plates can be controlled, so that the increase and decrease of the opening area between the substrate and the film forming material can be precisely controlled.

The film forming apparatus according to the present invention may be suitably applied to a film forming apparatus including a film forming apparatus in which a film forming process is performed in a state in which a substrate is horizontally performed, and a film forming process is performed in a state where the substrate is vertically disposed.

10: vacuum chamber 20: material holding part
21: Haas 23: Auxiliary anode
30: Plasma beam generating means 40: Film thickness adjusting means
42: opening 44: film thickness regulating plate
40:

Claims (7)

There is provided a film forming apparatus for forming a film on a surface of a base material having a material holding portion having a base material on one side and a film forming material on the other side with an opening in the vacuum chamber and scattering the film forming material in a vapor phase with a plasma beam,
And a film thickness regulating plate provided in an opening of the vacuum chamber and adjusting a film thickness by adjusting an extent of scattering of the film forming material to the substrate by increasing or decreasing an opening area of the opening,
The material holding portion:
A hearth accommodating the film forming material;
A beam guide spaced apart from the haul and disposed to surround the haul, the beam guide guiding the plasma beam to the haul side; And
And a beam guide installing means for adjusting a relative position of the beam guide with respect to the haul by adjusting a position at which the beam guide is disposed on the other inner side surface of the vacuum chamber,
Wherein the beam guide installing means includes a vertical support for supporting the beam guide in a direction perpendicular to the other side of the vacuum chamber, and a position setting unit for adjusting a position supported by the other side of the vacuum chamber,
The vertical support portion includes a support flange provided at the upper and lower ends of the beam guide and a fastening member for adjusting the position of the support flange vertically or horizontally and fastening to the other side of the vacuum chamber,
The position setting unit may include a plurality of bar supporting blocks located in the peripheral region of the beam guide and supported on the other side of the vacuum chamber, and a plurality of bar supporting blocks mounted on the bar supporting blocks and reciprocally movable in the direction toward the center of the beam guide And a position adjusting bar which is engaged with the side face of the beam guide and adjusts the position of the beam guide by applying an external force to the side face of the beam guide. The method according to claim 1,
Wherein the film thickness regulating plate is composed of a plurality of film thickness regulating plates arranged so as to reciprocate in a direction of increasing or decreasing the opening area. 3. The method of claim 2,
And a driving unit for driving each of the film thickness control plates outside the vacuum chamber. The method of claim 3,
Further comprising an opening frame forming the opening between the base material and the material holding portion and having a guide groove formed in a number corresponding to the film thickness regulating plate in a direction corresponding to the reciprocating direction of the film thickness regulating plate,
Wherein the film thickness regulating plate is provided with a guide corresponding to the guide groove so as to be able to transmit driving force from the driving unit. 5. The method of claim 4,
The driving unit
An adjustment knob rotatably provided outside the vacuum chamber in a number corresponding to the film thickness control plate,
A conveyance screw connected to the guide to transmit the rotational motion of the adjustment knob to the linear motion of the film thickness regulating plate,
And a gear member rotatably engaged with the rotation shaft end of the adjustment knob and the one end of the transfer screw adjacent thereto to convert rotational motion into linear motion. 5. The method of claim 4,
The driving unit
A step motor provided outside the vacuum chamber in a number corresponding to the film thickness regulating plate,
A transfer screw connected to the guide for transferring the rotational motion of the step motor to the linear motion of the film thickness regulating plate,
And a gear member rotatably engaged with the rotation shaft end portion of the step motor and the one end portion of the transfer screw adjacent thereto to convert rotational motion into linear motion. 7. The method according to any one of claims 2 to 6,
The substrate is transported through the opening and the film thickness regulating plates are arranged in a direction orthogonal to the transport direction of the substrate so as to be reciprocatable in the transport direction of the substrate to increase or decrease the opening area of the opening .
KR1020160031688A 2015-03-25 2016-03-16 Film forming apparatus capable of adjusting forming thickness KR101790625B1 (en)

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