KR20110071591A - Laser processing apparatus which can control size of laser beam - Google Patents

Abstract

PURPOSE: A laser processing apparatus capable of controlling line length of a laser beam is provided to selectively heat-treat a part of a substrate when the substrate needs to be rotated and moved to thereby efficiently process a pattern formed on the substrate more efficiently. CONSTITUTION: A laser processing apparatus capable of controlling line length of a laser beam includes a laser irradiation device, a substrate support, a first beam blocking means, a second beam blocking means(51,52), and a beam blocking control means. The laser irradiation device irradiates a laser beam(41) in a line form to a substrate(30). The beam blocking control means controls the movement of the second beam blocking means and the first beam blocking means.

Description

  Laser processing apparatus which can control the line length of the laser beam

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a laser processing apparatus used when performing laser excitation chemical vapor deposition or annealing of polycrystalline silicon or the like using a laser, and more particularly, to a laser processing apparatus capable of adjusting the length of a laser beam irradiated at this time.

In manufacturing semiconductors, FPDs, photovoltaic devices, and the like, deposition of thin films at high temperatures causes many problems, such as contamination of reactors or generation of unwanted compounds. Therefore, laser-excited plasma chemical vapor deposition is used to deposit thin films at low temperatures.

On the other hand, as the substrate becomes larger, it is difficult to secure uniformity when annealing (annealing) after thin film deposition, and various alternatives have been proposed, and one of them is an annealing method using a laser.

1 is a view for explaining a conventional laser processing apparatus. Referring to Figure 1, the reaction chamber 10 is provided with the reaction gas outlet (11a, 11b) and the quartz window 20 is installed on the top. A laser irradiation device 40 is installed above the quartz window 20, and the laser beam irradiated from the laser irradiation device 40 passes through the quartz window 20 to reach the substrate 30 in the reaction chamber 10. do.

2 is a view for explaining the form of the laser beam 41 irradiated from the laser irradiation device 40 of FIG. As shown in FIG. 2, the laser beam 41 is irradiated onto the substrate 30 in a line form. The substrate 30 is horizontally moved in a direction perpendicular to the line of the laser beam 41 (arrow direction) to irradiate the laser beam 41 on the entire surface of the substrate 30. FIG. 2A is a view showing a state of looking down the substrate, and FIG. 2B is a perspective view of the substrate.

However, as shown in FIG. 3, since the substrate 30 includes the device region 32 in which the device is integrated and the peripheral part 31 in which the device is not formed, the laser beam 41 is not irradiated to the peripheral part 31. In addition, since the diffraction phenomenon may occur at the edge portion of the laser beam 41, it is necessary to consider this during the process. Therefore, even though it is necessary to control the line length of the laser beam 41, conventionally, the length of the laser beam 41 cannot be adjusted, which is a problem.

Accordingly, an object of the present invention is to provide a laser processing apparatus capable of controlling the line length of a laser beam in order to increase the efficiency of laser processing.

Laser processing apparatus according to an embodiment of the present invention for achieving the above object, the reaction chamber is mounted on the substrate and the quartz window is installed on the upper surface; A laser irradiation device installed outside the reaction chamber so as to be positioned above the quartz window and irradiating the substrate with a line-shaped laser beam; And installed at at least one of both side ends of the laser beam so as to be positioned between the laser irradiation device and the quartz window so as to horizontally move in a line length direction of the laser beam while blocking a line side end of the laser beam. Beam blocking means; characterized in that it comprises a.

A feedback means or an absorbing means for dissipating beam energy is further provided in a space above the beam blocking means, the beam blocking means is installed obliquely with respect to the irradiation direction of the laser beam, and the feedback means is provided in the beam blocking means. Controlling the intensity of the laser beam output from the laser irradiation apparatus by feeding back the beam intensity measured by the light receiving element, including the light receiving element, to the laser irradiation apparatus so as to receive the laser beam reflected by the laser beam and measure the intensity thereof. desirable.

In this case, the light receiving element may be installed at a predetermined portion of the bottom surface of the feedback means, and in this case, it is preferable that the beam absorbing means is installed at the remaining bottom portion of the feedback means in which the light receiving element is not installed. The beam absorbing means may be achieved by knurling a bottom surface of the feedback means.

Laser processing apparatus according to another embodiment of the present invention for achieving the above object is a laser irradiation device for irradiating a line-type laser beam to the substrate; A substrate support on which the substrate is placed and installed horizontally in a direction perpendicular to the line of the laser beam; A first beam blocker disposed between the laser irradiation device and the substrate support to be opposed to each other at both ends of the laser beam so as to horizontally move in a line length direction of the laser beam while blocking both ends of the line of the laser beam; Means and second beam blocking means; Beam blocking control means for controlling movement of the first beam blocking means and the second beam blocking means; Provided with

The substrate is placed rotated by θ ° with respect to the moving direction of the substrate support,

The movement of the first beam blocking means is controlled by the beam blocking control means so as to be positioned on a reference line positioned on the substrate while being parallel to the moving direction of the substrate support when the substrate support moves.

The second beam blocking means is characterized in that the movement is controlled by the beam blocking control means to be located on the side of the substrate when the substrate support is moved.

The first beam blocking means is positioned on a reference line positioned on the substrate while being parallel to the moving direction of the substrate support when the substrate support moves, and the beam blocking means is located on the side of the substrate at the point where the reference line ends. The movement can be controlled by the control means.

The beam blocking control means receives the first beam blocking means and the second beam by receiving the moving speed of the substrate support, the horizontal and vertical lengths of the substrate, the angle between the reference line and the substrate, and the position of the start point of laser processing. The movement of the beam blocking means is controlled.

According to one embodiment of the present invention, the length of the laser beam incident on the substrate can be adjusted, and the intensity of the laser beam can be controlled in real time during the process.

According to another example of the present invention, when a substrate is to be rotated and moved, only a part of the substrate can be selectively heat treated. This is because when (i) the substrate is enlarged and the line length of the laser beam does not reach the width of the substrate, (ii) when the substrate is laser processed at the same time, the quality of a large part of the substrate is not guaranteed due to the uneven intensity of the laser. (I) Rotating and moving the substrate can be usefully used in the case where uniform laser processing is ensured more efficiently on the pattern formed on the substrate.

Hereinafter, preferred embodiments of the present invention will be described in detail with reference to the accompanying drawings. The following examples are only presented to understand the content of the present invention, and those skilled in the art will be capable of many modifications within the spirit of the present invention. Therefore, the scope of the present invention should not be construed as being limited to these embodiments.

Example 1

4 is a partial front sectional view for explaining the laser processing apparatus according to the first embodiment of the present invention, Figure 5 is a perspective view showing a partial cross-section along the line AA 'of FIG. 6 is a plan view schematically illustrating the movement of the beam blocking means 50.

4 and 5, the beam blocking means 50 is installed between the laser irradiation device 40 and the quartz window 20, and as shown in FIG. 6, the beam blocking means 50 has a line shape. Both ends of the laser beam 41 are provided at both ends of the laser beam 41 so as to be horizontally movable in the longitudinal direction of the line of the laser beam 41 while blocking both ends of the laser beam 41. Therefore, the effective line length of the laser beam 41 irradiated to the substrate 30 is determined according to the horizontal movement of the beam blocking means 50.

The beam blocking means 50 is provided obliquely with respect to the irradiation direction of the laser beam 41 in order not only to block the laser beam 41 but also to reflect upwardly. 4 and 5, only one of the beam blocking means 50 provided at both ends is shown for clarity of illustration.

The laser beam 41 reflected by the beam blocking means 50 is incident on the light receiving element 61 provided on the bottom surface of the feedback means 60. 7 is a bottom view for explaining the bottom surface of the feedback means 60. The feedback means 60 controls the intensity of the laser beam output from the laser irradiation apparatus 40 by measuring the intensity of the laser beam received through the light receiving element 61 and feeding it back to the laser irradiation apparatus 40.

Beam absorbing means 62 is provided around the light receiving element 61 to prevent the laser beam 41 from being reflected back by the feedback means 60 and entering the substrate 30 to affect the process. . The beam absorbing means 62 can be implemented by knurling the periphery of the light receiving element 61.

According to the first embodiment of the present invention, the line length of the laser beam 41 incident on the substrate 30 can be adjusted, and the laser beam irradiation apparatus 40 receives the intensity of the laser beam 41 in real time. By feeding back), the intensity of the laser beam 41 can be controlled in real time even during the process.

Example 2

8 is a view for explaining a laser processing apparatus according to a second embodiment of the present invention. As shown in FIG. 2, the substrate 30, which is a process object, is not placed in a straight line with respect to the moving direction of the substrate 30. In some cases, the reference line 70 is parallel to the moving direction of the substrate 30 as shown in FIG. 8. It is necessary to rotate the substrate 30 by θ ° to perform laser processing. In addition, it is necessary to selectively laser a part of the substrate 30 instead of the whole. 8 is for explaining the movement control of the beam blocking means 51, 52 in this case.

Beam blocking means (51, 52) is located between the laser irradiation device 40 and the quartz window 20, the horizontal movement in the line length direction of the laser beam 41 while blocking both ends of the line of the laser beam (41) It is provided at both ends of the laser beam 41 so as to enable it.

The horizontal movement of the beam blocking means 51 and 52 in the line length direction of the laser beam 41 is performed through the control of the beam blocking control means 80.

The first beam blocking means 51 is positioned on the reference line 70 positioned on the substrate 30 while being parallel to the moving direction of the substrate 30 when the substrate 30 moves, and then ends at the reference line 70. In A), it moves along the side of the substrate 30. The second beam blocking means 52 moves along the side of the substrate 30 when the substrate 30 moves.

The first beam blocking means 51 and the second beam blocking means 52 are positioned so as to face the improvement, and the change rate of the gap is a moving speed V of the substrate 30 and a horizontal length L1 of the substrate 30. And a longitudinal length L2, an angle θ ° between the reference line 70 and the substrate 30 positioned on the substrate 30 while being parallel to the moving direction of the substrate 30, and a position S of the starting point. Is determined accordingly.

The beam blocking control unit 80 receives the above factors from the user in advance and calculates the interval change rate between the first beam blocking unit 51 and the second beam blocking unit 52, and then determines the laser processing process. At this time, the motion trajectory of the first beam blocking means 51 and the second beam blocking means 52 is controlled based on the calculation result.

Although the above description has been made with reference to the substrate 30, the beam blocking means 51 and 52 may be controlled based on the substrate support on which the substrate 30 is placed. Of course, in this case, correction by the difference between the substrate support and the substrate 30 will be necessary.

As described above, according to the second embodiment, when the substrate 30 needs to be rotated and moved, only a part of the substrate 30 can be selectively heat treated.

In the above-described second embodiment, when (i) the substrate 30 is enlarged and the line length of the laser beam 41 does not reach the width of the substrate 30, (ii) the substrate 30 is laser processed at one time. In this case, when the quality of a substantial portion of the substrate 30 is not guaranteed due to the intensity unevenness of the laser 41, (i) rotating and moving the substrate 30 is more efficiently uniform to the pattern formed on the substrate 30. It can be usefully used in the case where one laser processing is secured.

1 is a view for explaining a conventional laser processing apparatus;

2 is a view for explaining the shape of the laser beam 41 of FIG.

3 is a view for explaining a problem of the conventional laser processing apparatus;

4 is a partial front cross-sectional view for explaining the laser processing apparatus according to the first embodiment of the present invention;

FIG. 5 is a perspective view showing a partial cross section taken along line AA ′ of FIG. 4; FIG.

6 is a schematic plan view for explaining the movement of the beam blocking means 50 of FIG.

FIG. 7 is a view for explaining the feedback means 60 of FIG. 5;

8 is a view for explaining a laser processing apparatus according to a second embodiment of the present invention.

<Description of reference numbers for the main parts of the drawings>

10: reaction chamber 11a, 11b: reaction gas outlet

20: quartz window 30: substrate

31: Peripheral 32: Device Area

40: laser irradiation device 41: laser beam

50, 51, 52: beam blocking means 60: feedback means

61: light receiving element 62: beam absorbing means

70: reference line 80: beam blocking control means

Claims (3)

A laser irradiation device for irradiating a substrate with a line-shaped laser beam; A substrate support on which the substrate is placed and installed horizontally in a direction perpendicular to the line of the laser beam; A first beam blocker disposed between the laser irradiation device and the substrate support to be opposed to each other at both ends of the laser beam so as to horizontally move in a line length direction of the laser beam while blocking both ends of the line of the laser beam; Means and second beam blocking means; Beam blocking control means for controlling movement of the first beam blocking means and the second beam blocking means; Provided with The substrate is placed rotated by θ ° with respect to the moving direction of the substrate support, The movement of the first beam blocking means is controlled by the beam blocking control means so as to be positioned on a reference line positioned on the substrate while being parallel to the moving direction of the substrate support when the substrate support moves. And the second beam blocking means is controlled to be moved by the beam blocking control means so as to be positioned on the side of the substrate when the substrate support moves. The substrate of claim 1, wherein the first beam blocking means is positioned on a reference line positioned on the substrate while being parallel to the moving direction of the substrate support when the substrate support moves. And the movement is controlled by the beam block control means so as to be positioned on the laser processing device. The method of claim 1, wherein the beam blocking control unit receives the moving speed of the substrate support, the horizontal and vertical lengths of the substrate, the angle formed by the reference line and the substrate, and the position of a start point of laser processing. Laser processing apparatus characterized in that for controlling the movement of the beam blocking means and the second beam blocking means.

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