KR101778334B1 - Gas introducing apparatus and inductively coupled plasma processing apparatus - Google Patents

Abstract

The present invention provides a mounting structure capable of extremely avoiding inconvenience caused by heat of a ceramic part used in a processing apparatus. The gas introduction adapter 10A has a hollow adapter body 121 and a fixing mechanism 122 for fixing the adapter body 121 to the first partial wall 6A. The fixing mechanism 122 includes a holder 123 for holding the upper flange 121a of the adapter body 121, a ring-shaped male screw 124 as a first fastening member, a nut 125 as a second fastening member, And a spacer 126 fixed to the periphery of the adapter body 121 on the upper surface of the first partial wall 6A. The holder 123 thermally expands in the direction opposite to the nut 125 and the spacer 126 when heated and functions as stress relieving means for relieving the stress of the adapter body 121. [

Description

TECHNICAL FIELD [0001] The present invention relates to a gas introducing apparatus and an inductively coupled plasma processing apparatus,

The present invention relates to a gas introducing apparatus and an inductively coupled plasma processing apparatus having the gas introducing apparatus for introducing a processing gas into a processing chamber of a processing apparatus such as an inductively coupled plasma processing apparatus.

In the FPD (flat panel display) manufacturing process, various plasma processes such as plasma etching, plasma ashing, and plasma film formation are performed on a glass substrate for FPD. As an apparatus for performing such plasma processing, an inductively coupled plasma (ICP) processing apparatus capable of generating a high-density plasma is known.

The inductively coupled plasma processing apparatus is airtightly held and includes a processing chamber in which plasma processing is performed on a substrate to be processed and a high frequency antenna disposed outside the processing chamber. The treatment chamber has a plate-like member made of a material such as a dielectric that constitutes the ceiling portion, and the high-frequency antenna is disposed above the plate-like member. In this inductively coupled plasma processing apparatus, an induction electric field is formed in the treatment chamber through the plate-shaped member by applying high frequency power to the high frequency antenna. The induced gas brings the process gas introduced into the process chamber into the plasma, and a predetermined plasma process is performed on the substrate using the plasma.

In the inductively coupled plasma processing apparatus, the lower surface of the plate-like member is covered with a detachable dielectric cover. Thus, the lower surface of the plate-like member can be protected, and the damaged dielectric cover can be easily replaced or cleaned. Patent Document 1 proposes a gas introducing device for introducing a process gas through a fixture for fixing the dielectric cover. In this proposal, the degree of freedom of the introduction position of the process gas into the process chamber in the inductively coupled plasma processing apparatus is increased by using both the fixture and the gas introducing apparatus, and for example, even from the vicinity of the center of the plate- Can be introduced. In the inductively coupled plasma processing apparatus in which a large substrate is to be treated, it is necessary to uniformly supply the processing gas into the substrate surface, so that the technique of Patent Document 1 is useful.

Japanese Patent Application Laid-Open No. 11-171153 (FIG. 11, etc.)

In the inductively coupled plasma processing apparatus, when a metal is used as the material of the gas introducing apparatus for introducing the processing gas into the processing chamber through the plate-shaped member, the plate-like member made of a metal or a dielectric material has a large difference in thermal expansion coefficient , It is feared that cracks will be generated in the plate-shaped member. In order to prevent this, most of the gas introducing device may be formed of ceramics. However, since the ceramics have a large difference in thermal expansion coefficient from metal parts for fixing such as screws, thermal stress is applied to members made of ceramics at the time of plasma generation, which may cause inconveniences such as cracking and breakage. Particularly, in an inductively coupled plasma processing apparatus to be processed with a large substrate, it is necessary to apply a large high frequency power to the high frequency antenna, so that the heat generated by the plasma increases and the thermal stress to the ceramic member also increases .

SUMMARY OF THE INVENTION The present invention has been made in view of such problems, and an object of the present invention is to provide a mounting structure capable of extremely avoiding inconvenience caused by heat of a ceramic component used in a processing apparatus.

In the gas introducing apparatus of the present invention,

A main body container,

A processing chamber provided in the main body container to receive an object to be processed,

A plate-like member constituting a ceiling portion of the treatment chamber,

A gas supply device for supplying gas to the process chamber,

And introducing the gas into the treatment chamber of the treatment apparatus having a pipe for introducing the gas from the gas supply apparatus into the treatment chamber.

In the gas introducing apparatus of the present invention,

A hollow ceramic member having a first flange portion having a size to be inserted into the through-hole and a second flange portion larger than the through-hole, the hollow ceramic member being connected to the pipe in a state of being inserted into the through-

A holding member for contacting and holding the first flange portion of the ceramic member inserted into the through-hole,

A first fastening member connected to the holding member and having a first screw structure on an outer peripheral portion thereof,

And a second fastening member having a second screw structure screwed to the first screw structure on the inner circumferential surface forming a cylindrical shape and fastened to the first fastening member.

In the gas introducing apparatus of the present invention, the holding member and the first fastening member are connected so that the direction in which the holding member is elongated by thermal expansion and the direction in which the second fastening member is stretched by thermal expansion are opposite to each other .

The gas introducing apparatus of the present invention is characterized in that the holding member is coupled to the first flange portion of the ceramic member by screwing the first fastening member and the second fastening member, And then pulled up by the shape member to fix the ceramic member to the plate-like member.

In the gas introducing apparatus of the present invention, the holding member may be constituted by a plurality of members forming a cylindrical body having a cylindrical portion and a reduced diameter portion projecting inward from the cylindrical portion in a combined state.

In the gas introducing device of the present invention, the first fastening member may have a ring shape and the inner diameter thereof may be larger than the outer diameter of the first flange portion of the ceramics member.

In the gas introducing apparatus of the present invention, the coefficient of linear thermal expansion of the material constituting the holding member may be larger than the coefficient of linear thermal expansion of the material constituting the second fastening member.

In the gas introducing apparatus of the present invention, the third member may be interposed between the holding member and the first fastening member.

The gas introducing device of the present invention may also have a spacer member fixed around the through-hole of the plate-like member. In this case, the second fastening member comes into contact with the spacer member by screwing with the first fastening member, and by further tightening the second fastening member from the contacted state, The member may be moved in a direction away from the plate-like member to press the holding member fixed to the first engaging member against the first flange portion.

In the gas introducing apparatus of the present invention, the second fastening member may be fastened so as to cover the first fastening member and the holding member from the outside.

In the gas introducing apparatus of the present invention, the processing apparatus may be an inductively coupled plasma processing apparatus.

In the inductively coupled plasma processing apparatus of the present invention,

A main body container,

A processing chamber provided in the main body container to receive an object to be processed,

A plate-like member constituting a ceiling portion of the treatment chamber,

A gas supply device for supplying gas to the process chamber,

A pipe for introducing the gas from the gas supply device into the process chamber,

A gas introducing device for introducing gas into the treatment chamber by being mounted on the through-hole of the plate-like member,

And a high-frequency antenna disposed above the plate-like member and forming an induction field in the treatment chamber.

In the inductively coupled plasma processing apparatus of the present invention,

A hollow ceramic member having a first flange portion having a size to be inserted into the through-hole and a second flange portion larger than the through-hole and connected to the pipe in a state of being inserted into the through-

A holding member for contacting and holding the first flange portion of the ceramic member inserted into the through-hole,

A first fastening member fixing the holding member and having a first screw structure on an outer peripheral portion thereof,

And a second fastening member having a second screw structure screwed to the first screw structure on the inner circumferential surface of the cylindrical shape and fastened to the first fastening member.

The inductively coupled plasma processing apparatus of the present invention is characterized in that the holding member and the first fastening member are arranged such that the direction in which the holding member is extended by thermal expansion and the direction in which the second fastening member is stretched by thermal expansion are opposite to each other, Are connected to each other.

The inductively coupled plasma processing apparatus of the present invention is characterized in that the holding member is engaged with the first flange portion of the ceramics member by screwing the first fastening member and the second fastening member, And the ceramic member is pulled by the plate-like member to fix the ceramic member to the plate-like member.

In the inductively coupled plasma processing apparatus of the present invention, the holding member may be constituted by a plurality of members forming a cylindrical body having a cylindrical portion and a diameter-reduced portion projecting inward from the cylindrical portion in a combined state good.

In the inductively coupled plasma processing apparatus of the present invention, the first fastening member may have a ring-like shape, and the inner diameter thereof may be larger than the outer diameter of the first flange portion of the ceramics member.

In the inductively coupled plasma processing apparatus of the present invention, the coefficient of linear thermal expansion of the material constituting the holding member may be larger than the coefficient of linear thermal expansion of the material constituting the second fastening member.

In the inductively coupled plasma processing apparatus of the present invention, the third member may be interposed between the holding member and the first fastening member.

The inductively coupled plasma processing apparatus of the present invention may also have a spacer member fixed around the through-hole of the plate-like member. In this case, the second fastening member is brought into contact with the spacer member by screwing with the first fastening member, and by further tightening the second fastening member from the contacted state, The member may be moved in a direction away from the plate-like member to press the holding member fixed to the first engaging member against the first flange portion.

In the inductively coupled plasma processing apparatus of the present invention, the second fastening member may be fastened while covering the first fastening member and the holding member from the outside.

According to the gas introducing apparatus and the inductively coupled plasma processing apparatus of the present invention, the holding member and the first fastening member are arranged so that the direction in which the holding member is elongated by thermal expansion and the direction in which the second fastening member is stretched by thermal expansion are opposite to each other By the connection, the stress applied to the ceramic member at the time of heating can be relaxed. Therefore, breakage of the ceramic member can be prevented, and reliability and durability of the gas introduction device can be improved.

1 is a sectional view showing an inductively coupled plasma processing apparatus according to a first embodiment of the present invention,
Fig. 2 is a perspective view showing the dielectric wall, the suspender, and the gas introduction adapter in Fig. 1,
Fig. 3 is a perspective view showing a dielectric wall and a high-frequency antenna in Fig. 1,
Fig. 4 is a bottom view showing the dielectric cover and the shower head in Fig. 1, Fig.
5 is a cross-sectional view showing a section of a position shown by a line VV in Fig. 4,
Fig. 6 is a perspective view showing the external structure of the adapter body,
Fig. 7 is a perspective view provided by a description of the components constituting the holder,
8 is an explanatory diagram of a mounting procedure of the gas introduction adapter, which is an explanatory diagram showing a state in which the adapter main body is fitted to the first partial wall,
Fig. 9 is an explanatory view showing a preparing step for mounting the holder, following Fig. 8;
Fig. 10 is an explanatory view showing a state in which a ring-shaped male screw is connected to a holder and attached to an adapter body,
Fig. 11 is an explanatory view showing a shape in which a nut is tightened to a ring-shaped male thread,
Fig. 12 is a view for explaining the action of the first embodiment of the present invention,
13 is a sectional view showing a configuration of a gas introduction adapter in an inductively coupled plasma processing apparatus according to a second embodiment of the present invention;

BEST MODE FOR CARRYING OUT THE INVENTION Hereinafter, embodiments of the present invention will be described in detail with reference to the drawings.

[First Embodiment]

<Configuration of Inductively Coupled Plasma Processing Apparatus>

First, the configuration of the inductively coupled plasma processing apparatus according to the first embodiment of the present invention will be described with reference to Figs. 1 to 4. Fig. 1 is a sectional view showing an inductively coupled plasma processing apparatus. 2 is a perspective view showing a dielectric wall as a "plate member" in FIG. 1, a suspender functioning as a "pipe", and a gas introduction adapter as a "gas introducing device". Fig. 3 is a perspective view showing a dielectric wall and a high-frequency antenna in Fig. 1. Fig. 4 is a bottom view showing a dielectric wall on which a dielectric cover is mounted.

The inductively coupled plasma processing apparatus 1 shown in Fig. 1 performs plasma processing on, for example, a glass substrate (hereinafter simply referred to as "substrate") S for FPD. Examples of the FPD include a liquid crystal display (LCD), an electro luminescence (EL) display, a plasma display panel (PDP), and the like.

The inductively coupled plasma processing apparatus 1 includes a main body container 2 and a dielectric wall 3 as a "plate-like member" which is disposed in the main body container 2 and divides the space in the main body container 2 into two upper and lower spaces 6). The inside of the main body container 2 is divided into an antenna chamber 4 and a treatment chamber 5 by a dielectric wall 6. The space on the upper side of the dielectric wall 6 in the main container 2 is the antenna chamber 4 and the space on the lower side of the dielectric wall 6 in the main container 2 is the process chamber 5. Therefore, the dielectric wall 6 constitutes the bottom portion of the antenna chamber 4 and constitutes the ceiling portion of the treatment chamber 5. [ The treatment chamber 5 is kept airtight, and plasma treatment is performed thereon.

The main body container 2 is a rectangular tubular container having a top wall 2a, a bottom 2b and four side portions 2c. The main container 2 may be a cylindrical container. As the material of the main container 2, a conductive material such as aluminum or an aluminum alloy is used. When aluminum is used as the material of the main container 2, the inner wall surface of the main container 2 is subjected to an alumite treatment so that no contaminants are generated from the inner wall surface of the main container 2. In addition, the main container 2 is grounded.

The dielectric wall 6 has an approximately square or rectangular top surface and bottom surface, and a substantially rectangular parallelepiped shape having four side surfaces. The dielectric wall 6 is formed by a dielectric material. As the material of the dielectric wall 6, for example, ceramics such as Al ₂ O ₃ or quartz is used. As an example, the dielectric wall 6 is divided into four parts. That is, the dielectric wall 6 has a first partial wall 6A, a second partial wall 6B, a third partial wall 6C and a fourth partial wall 6D. Further, the dielectric wall 6 may not be divided into four parts.

The inductively coupled plasma processing apparatus 1 further comprises a support shelf 7 and a support beam 16 as a support member for supporting the dielectric wall 6. [ The support shelf 7 is mounted on the side wall 2c of the main body container 2. [ The support beam 16 has a cross shape as shown in Fig. The four partial walls 6A, 6B, 6C and 6D of the dielectric wall 6 are supported by a support shelf 7 and a support beam 16. Further, the support shelves 7 and the support beams 16 may be integrally formed.

2, the inductively coupled plasma processing apparatus 1 further includes a cylindrical suspender 8A having an upper end connected to the upper wall 2a of the main container 2 and a cylindrical suspender 8B , 8C, 8D and 8E. The support beam 16 is connected to the lower end of the suspender 8A at the central portion (crossing portion of the cross) of the upper surface thereof. In the present embodiment, the suspenders 8A to 8E and the support beams 16 are both support members. The support beams 16 are connected to the lower ends of the suspenders 8B, 8C, 8D, and 8E at four positions in the middle between the central portion on the upper surface and the four tip portions of the cross. Thus, the support beams 16 are suspended from the upper wall portion 2a of the main container 2 by the five suspenders 8A to 8E, In a horizontal position. A gas introducing path 201 for introducing a gas into the process chamber 5 is formed inside the suspender 8A.

As the material of the support beam 16, for example, a metal material such as aluminum is preferably used. When aluminum is used as the material of the support beam 16, the inner and outer surfaces of the support beam 16 are anodized to prevent contamination from the surface. A gas introduction passage 202 is formed in the support beam 16.

2, the inductively coupled plasma processing apparatus 1 further includes cylindrical suspenders 9A, 9B, 9C, and 9D having upper ends connected to the upper wall 2a of the main body container 2, respectively, , 9E, 9F, 9G, 9H). The gas introducing passages 211A, 211B, 211C, 211D, 211E, 211F, 211G, 211H are formed in the hollow portions of the suspenders 9A, 9B, 9C, 9D, 9E, 9F, 9G, 9H. In the present embodiment, the suspender 8A and the suspenders 9A, 9B, 9C, 9D, 9E, 9F, 9G, 9H each having a hollow portion constitute a "pipe".

The suspender 9A is connected to the first partial wall 6A via a gas introducing adapter 10A as a gas introducing device and the suspender 9B via a gas introducing adapter 10B (Not shown). Similarly, the suspenders 9C and 9D are connected to an opening (not shown) provided in the second partial wall 6B via the gas introducing adapters 10C and 10D as the "gas introducing device ". Similarly, the suspenders 9E and 9F are connected to an opening (not shown) provided in the third partial wall 6C via the gas introducing adapters 10E and 10F as the "gas introducing device ". Similarly, the suspenders 9G and 9H are connected to an opening (not shown) provided in the fourth partial wall 6D via the gas introducing adapters 10G and 10H as the "gas introducing device ".

The inductively coupled plasma processing apparatus 1 further includes a high frequency antenna (hereinafter simply referred to as "antenna") disposed above the dielectric wall 6 in the antenna chamber 4, 13). As shown in Fig. 3, the antenna 13 has a substantially square or rectangular rectangular flat spiral shape. The antenna 13 is disposed on the upper surface of the dielectric wall 6. A matching device 14 and a high frequency power source 15 are provided outside the main body container 2. One end of the antenna 13 is connected to a high frequency power source 15 via a matching device 14. The other end of the antenna 13 is connected to the inner wall of the main container 2 and is grounded via the main container 2.

The inductively coupled plasma processing apparatus 1 further includes a dielectric cover 12 covering the lower surface of the dielectric wall 6. [ The dielectric cover 12 is in the shape of a plate having four sides in an approximately square or rectangular shape. The dielectric cover 12 is formed of a dielectric material. As the material of the dielectric cover 12, for example, Al ₂ O ₃ , And quartz are used.

As an example, the dielectric cover 12 is divided into four parts, like the dielectric wall 6. 4, the dielectric cover 12 has a first partial cover 12A, a second partial cover 12B, a third partial cover 12C and a fourth partial cover 12D . The first to fourth partial covers 12A, 12B, 12C and 12D cover the lower surfaces of the first to fourth partial walls 6A, 6B, 6C and 6D of the dielectric wall 6, respectively. Further, the dielectric cover 12 may not be divided into four parts, or may be divided into five or more parts.

As shown in FIG. 4, the inductively coupled plasma processing apparatus 1 has a dielectric cover fixture 18 for fixing the dielectric cover 12. A gas introducing passage 203 and a plurality of gas holes 204 communicating with the gas introducing passage 203 are provided in the dielectric cover fastener 18. The inductively coupled plasma processing apparatus 1 is provided with dielectric cover fixing tools 19A, 19B, 19C and 19D in addition to the dielectric cover fixing tool 18. [ The dielectric cover 12 is fixed by dielectric cover fasteners 18, 19A, 19B, 19C and 19D. The fixing of the peripheral portion of the dielectric cover 12 is not limited to the four positions indicated by reference numerals 19A, 19B, 19C and 19D.

When plasma processing is performed on the substrate S, high frequency electric power (for example, high frequency electric power of 13.56 MHz) for induction electric field formation is supplied from the high frequency electric power source 15 to the antenna 13. Thereby, the induction electric field is formed in the treatment chamber 5 by the antenna 13. This induction electric field causes the plasma to be introduced into the processing gas to be described later.

A gas supply device 20 is further provided outside the main body container 2. The gas supply device 20 supplies the process gas used for the plasma process through the gas flow path into the process chamber 5. A gas supply pipe 21 is connected to the gas supply device 20. The gas supply pipe 21 is branched into nine (only five are shown), and one of them is connected to the gas introduction path 201 formed in the hollow portion of the suspender 8A. The gas introduction path 201 is connected to the gas introduction path 202 formed in the support beam 16. Eight of the branched portions of the gas supply pipe 21 are connected to the gas introducing passages 211A, 211B, 211C, 211D, and 211D formed in the hollow portions of the suspenders 9A, 9B, 9C, 9D, 9E, 9F, 9G, 211E, 211F, 211G, and 211H.

The gas is supplied from the gas supply device 20 to the gas introducing path 21 formed in the gas supply pipe 21 and its branch pipe, the gas introducing path 201 of the suspender 8A and the support beam 16, The gas is introduced into the processing chamber 5 through the gas introducing path 203 of the dielectric cover fastener 202 and the gas introducing path 203 of the dielectric cover fastener 18.

The process gas is supplied from the gas supply device 20 to the gas introduction passages 211A formed in the gas supply pipe 21 and its branches and suspenders 9A, 9B, 9C, 9D, 9E, 9F, 9G, , 211B, 211C, 211D, 211E, 211F, 211G, and 211H, and the gas introduction adapters 10A, 10B, 10C, 10D, 10E, 10F, 10G and 10H.

As the process gas, SF ₆ gas, Cl ₂ gas, or the like is used, for example. A valve or a flow rate control device (not shown) may be provided in the gas flow path, but a description thereof will be omitted.

The inductively coupled plasma processing apparatus 1 further includes a susceptor 22, an insulator frame 24, a strut 25, a bellows 26, and a gate valve 27. The pillars 25 are connected to a lifting device (not shown) provided below the main container 2 and protrude into the process chamber 5 through openings formed in the bottom of the main container 2. [ The column 25 has a hollow portion. The insulator frame (24) is provided on the support (25). The insulator frame 24 has a box-like shape with an open top. At the bottom of the insulator frame 24, an opening is formed which leads to the hollow portion of the support 25. The bellows 26 surrounds the strut 25 and is hermetically connected to the insulator frame 24 and the inner wall of the bottom of the main container 2. [ Thus, the airtightness of the treatment chamber 5 is maintained.

The susceptor 22 is accommodated in the insulator frame 24. The susceptor 22 has a mounting surface 22A for mounting the substrate S thereon. The mounting surface 22A is opposed to the dielectric cover 12. As the material of the susceptor 22, for example, a conductive material such as aluminum is used. When aluminum is used as the material of the susceptor 22, the surface of the susceptor 22 is anodized to prevent contamination from the surface.

A matching device 28 and a high-frequency power source 29 are provided outside the main body container 2. The susceptor 22 is connected to the matching device 28 through an opening of the insulator frame 24 and a current carrying bar inserted through the hollow portion of the strut 25 and is also connected to the high- (Not shown). When plasma processing is performed on the substrate S, a high frequency power for bias (for example, a high frequency power of 3.2 MHz) is supplied from the high frequency power source 29 to the susceptor 22. This high frequency power is used for effectively introducing ions in the plasma to the substrate S mounted on the susceptor 22. [

The gate valve (27) is provided on the side wall of the main body container (2). The gate valve 27 has an opening and closing function and is capable of transferring the substrate S between the processing chamber 5 and the outside in an opened state while maintaining the airtightness of the processing chamber 5 in a closed state.

An exhaust device 30 having, for example, a vacuum pump or the like is provided outside the main body container 2. The exhaust device 30 is connected to the processing chamber 5 via an exhaust pipe 31 connected to the bottom of the main body container 2. [ When the plasma processing is performed on the substrate S, the exhaust apparatus 30 exhausts the air in the processing chamber 5 and keeps the inside of the processing chamber 5 in a vacuum atmosphere.

<Overview of Gas Intake Mechanism>

Next, a gas introducing mechanism including the gas introducing adapter according to the present embodiment will be described in detail with reference to Figs. 4 to 7. Fig. 5 is a cross-sectional view taken along the line V-V in Fig. 5 shows a gas introduction adapter 10A for introducing gas from within the plane of the first partial cover 12A (the first partial wall 6A), the gas introduction adapter 10B And the gas introduction adapters 10C to 10H mounted on the second to fourth partial covers 12B to 12D (the second to fourth partial walls 6B to 6D).

4, in the inductively coupled plasma processing apparatus 1 of the present embodiment, at the portion where the first to fourth partial covers 12A, 12B, 12C and 12D intersect, the dielectric cover fastener 18 The gas introduction is performed through the gas holes 204 of the gas-liquid separator. In the inductively coupled plasma processing apparatus 1, the gas introducing portions are also provided in the respective surfaces of the first to fourth partial covers 12A, 12B, 12C and 12D. 4, four showerheads 130 for introducing gas into the process chamber 5 are provided in the respective surfaces of the first to fourth partial covers 12A, 12B, 12C and 12D have. The showerhead 130 is formed by polymerizing the two plate-shaped members of the upper plate 131 and the lower plate 132. The upper plate 131 and the lower plate 132 are made of a ceramic material. The upper plate 131 and the lower plate 132 are fixed to the adapter main body 121 of the gas introduction adapter 10A by fixing means such as screws (not shown).

A plurality of gas holes 133 are provided in each of the showerheads 130 that are long in the horizontal direction. Each gas hole 133 communicates with a gas diffusion portion 134, which is a cavity portion formed between the upper plate 131 and the lower plate 132. In this embodiment, two gas introduction adapters are connected to the gas diffusion portion 134. [ For example, the showerhead 130 provided in the surface of the first partial cover 12A is connected to the gas introduction adapter 10A and the gas introduction adapter 10B, and the gas introduction adapter 10A and the gas introduction adapter 10B. The shower head 130 provided in each of the surfaces of the second to fourth partial covers 12B, 12C and 12D has the same configuration.

In each central portion of the first to fourth partial walls 6A, 6B, 6C and 6D, there is no supporting beam 16 which is a supporting member. 5, the suspender 9A serving as the support member is connected to the gas introduction adapter 10A, so that the first partial cover 12A and the first partial wall 6A are separated from the central portion So that the gas can be introduced. The same applies to the second to fourth partial covers 12B, 12C and 12D and the second to fourth partial walls 6B, 6C and 6D.

The suspender 9A is also a supporting member for supporting the first partial wall 6A. A gas introducing path 211A connected to the gas supply pipe 21 is formed inside the suspender 9A. A gas introduction adapter 10A for introducing gas from the gas supply device 20 into the process chamber 5 is connected to the lower end of the suspender 9A via a connection port 110. [

The suspender 9A is supported on the upper wall 2a of the main body container 2 with mechanical clearance. More specifically, a presser plate 111 is mounted on the upper portion of the suspender 9A, and the suspender 9A is fixed to the upper wall portion 2a by securing means such as screws (not shown) Respectively. Between the pressure plate 111 and the upper wall 2a, a buffer member 112 is provided. The buffer member 112 is made of, for example, an elastic material such as fluorine rubber, silicone rubber, or an elastically deformable member such as a spiral spring gasket. The buffer member 112 is interposed between the pressure plate 111 and the upper wall 2a so that the suspender 9A is connected to the upper wall 2a of the main body container 2 so as to be slightly displaceable, And is supported on the upper wall 2a of the container 2 with a slight mechanical clearance. This makes it unnecessary to apply an unnecessary stress to the dielectric wall 6 and the dielectric cover 12 so as to prevent the dielectric wall 6 and the dielectric cover 12 from being damaged even when the dielectric wall 6 is expanded or deformed by heat, Is prevented. Although the illustration is omitted, the upper end of the suspender 9A is connected to the branch of the gas supply pipe 21.

The gas introduction adapter 10A has a hollow adapter body 121 as a "ceramic member" and a fixing mechanism 122 for fixing the adapter body 121 to the first partial wall 6A.

Fig. 6 is a perspective view showing an outer configuration of the adapter body 121. Fig. The adapter main body 121 includes an upper flange 121a as a "first flange portion" having a size that can be inserted into the through-hole 6a provided in the first partial wall 6A from the lower side, A lower flange 121b serving as a "second flange portion" having a large outer diameter and being not insertable through the through-hole 6a, and a cylindrical base portion 121c between the upper flange 121a and the lower flange 121b have. The base portion 121c of the adapter main body 121 is formed with a groove portion 121c having a smaller outer diameter than other portions. The end of the upper flange 121a is connected to the suspender 9A in a state where the adapter main body 121 is inserted into the through-hole 6a.

The upper flange 121a and the base 121c of the adapter main body 121 are inserted into the through-hole 6a provided in the first partial wall 6A. The lower flange 121b of the adapter main body 121 is fitted in the circular groove 6b provided in the first partial wall 6A. The material of the adapter body 121 is, for example, ceramics such as Al ₂ O ₃ and SiC.

The interior of the adapter body 121 is a continuous cavity from the upper end to the lower end, and constitutes a gas flow path 221. The gas flow path 221 is connected to the gas introduction path 211A inside the suspender 9A on the upstream side in the gas flow direction. The gas flow path 221 is connected to the gas diffusion portion 134 of the showerhead 130 on the downstream side in the gas flow direction.

The fixing mechanism 122 includes a holder 123 for holding the upper flange 121a of the adapter body 121, a ring-shaped male screw 124 as a first fastening member, a nut 125 as a second fastening member, And a spacer 126 fixed to the periphery of the adapter body 121 on the upper surface of the first partial wall 6A.

The holder 123 is coupled to the upper flange 121a of the adapter body 121 inserted into the through opening 6a of the first partial wall 6A from below and above the first partial wall 6A, It is a member to keep this. The holder 123 has a plurality of cross sections constituting a tubular body having a cylindrical portion 123a and a reduced diameter portion 123b projecting inward from the cylindrical portion 123a in a combined state, It is composed of fragments. The holder 123 thermally expands in the direction opposite to the nut 125 and the spacer 126 when heated and functions as stress relieving means for relieving the stress of the adapter body 121. [ For this purpose, the holder 123 is made of a metal having a relatively large coefficient of linear thermal expansion, such as stainless steel, as compared with at least the nut 125, for example.

In the present embodiment, the holder 123 is composed of two holder component parts 123A and 123B having the same shape as shown in Fig. The holder component 123A and the holder component 123B both have an arc shape and an end portion 123c is formed on the inner peripheral surface. The end portion 123c has a substantially corresponding shape so as to be fitted to a step between the upper flange 121a of the adapter body 121 and the groove portion 121c of the base portion 121c. The holder component 123A and the holder component 123B are opposed to each other and combined to form a holder 123 which is ring-shaped as a whole. At the upper end of the holder 123, there are provided a plurality of fixing screw hole portions 123d used for fixing to the ring-shaped male screw 124.

The ring-shaped male screw 124 is a ring-shaped member as a whole. Although not shown in the figure, the male screw 124 has a male screw structure as a "first screw structure" on its outer circumferential surface 124a. The ring-shaped male screw 124 is connected from the upper side of the holder 123 by a fixing means 127 such as a bolt. The inner diameter of the ring-shaped male thread 124 is larger than the outer diameter of the upper flange 121a of the adapter body 121. [ Therefore, since the upper flange 121a of the adapter body 121 can be easily inserted into the inside of the ring-shaped male thread 14, the ring-shaped male thread 124 having the male thread structure on the outer peripheral surface 124a can be inserted into the ring- There is no need to constitute a part, and generation of particles can be reduced. The ring-shaped male screw 124 is preferably made of a material having a relatively low coefficient of linear thermal expansion, such as Ti, as compared with the holder 123.

The nut 125 is a ring-shaped member as a whole. Although not shown in the figure, the nut 125 is provided on the inner circumferential surface 125a with a "second screw structure" of the outer circumferential surface 124a of the ring- Screw structure ". The nut 125 indirectly lifts the holder 123 in the upward direction (in the direction away from the first partial wall 6A) by engaging with the ring-shaped male thread 124. [ The nut 125 is mounted so as to cover the ring-shaped male screw 124 and the holder 123 from the outside. Like the ring-shaped male screw 124, the nut 125 is preferably made of a material having a coefficient of linear thermal expansion relatively lower than that of the holder 123, such as Ti.

The holder 123 connected to the ring-shaped male screw 124 does not directly engage with the nut 125 in the state where the ring-shaped male screw 124 and the nut 125 are fastened. 5, the outer peripheral surface of the holder 123 and the inner peripheral surface 125a of the nut 125 are not in contact with each other, and a gap S1 is formed between the both members. In other words, the holder 123 is connected to the ring-shaped male screw 124, so that when the nut 125 is fastened to the ring-shaped male screw 124, the nut 123 of the holder 123, The holder 123 is not directly coupled to the nut 125 although the relative position with respect to the holder 125 is changed.

The spacer 126 has a ring shape and is disposed on the upper surface of the first partial wall 6A so as to surround the through-hole 6a of the first partial wall 6A. The spacer 126 is formed of an elastic material such as PPS (polyphenylene sulfide), for example, and functions as a stopper for receiving the lower end of the nut 125. The spacer 126 may be fixed at a predetermined position on the first partial wall 6A using, for example, an adhesive.

<Installation Procedure of Gas Introducing Adapter>

Next, the mounting procedure of the gas introducing adapter 10A will be described with reference to Figs. 8 to 11. Fig. 8 shows a state in which the adapter main body 121 is fitted to the first partial wall 6A. The upper flange 121a of the adapter main body 121 is inserted into the through opening 6a of the first partial wall 6A and the lower flange 121b is inserted into the circular groove 6b of the first partial wall 6A Lt; / RTI &gt; On the upper surface of the first partial wall 6A, a spacer 126 is disposed at a position surrounding the through-hole 6a.

Next, Fig. 9 shows a preparation step for mounting the holder 123. Fig. As described above, the holder 123 is composed of the holder component 123A and the holder component 123B, and is a ring-shaped member in a state where the holder component 123A and the holder component 123B are combined. The holder 123 is assembled to the adapter main body 121 by opposing the holder component 123A and the holder component 123B so that the adapter main body 121 and the adapter main body 121 are sandwiched together. 9, the diametrically opposed portion 123b of the holder 123 is opposed to the groove portion 121c1 of the base portion 121c of the adapter main body 121, And the cylindrical portion 123a is opposed.

Next, as shown in Fig. 10, the ring-shaped male screw 124 is connected to the holder 123 and fixed to the adapter body 121 from the state shown in Fig. Since the inner diameter of the ring-shaped male thread 124 is larger than the outer diameter of the upper flange 121a of the adapter body 121, the upper flange 121a of the adapter body 121 is inserted into the opening 124b of the ring- 121a can be inserted. The connection between the holder component 123A and the holder component 123B and the ring-shaped male thread 124 can be performed by a fixing means 127 such as a plurality of bolts. Diameter portion 123b of the holder 123 is fitted into the groove portion 121c1 of the base portion 121c of the adapter body 121 in a state in which the adapter body 121 is mounted.

11 shows a state in which the nut 125 is tightened to the ring-shaped male screw 124 by engaging a male screw structure provided on the outer peripheral surface 124a of the ring-shaped male screw 124 and a female screw structure formed on the inner peripheral surface 125a of the nut 125 . When the both members are fastened, the nut 125 moves downward (in a direction indicated by a white arrow) in the figure, and the lower end of the nut 125 comes into contact with the spacer 126. The spacer 126 serves as a stopper and pushes up the ring-shaped male thread 124 in the upward direction (in the direction away from the first partial wall 6A) by fastening the nut 125. [ As a result, the holder 123 fixed to the ring-shaped male thread 124 is also pulled upward (in a direction away from the first partial wall 6A). 5, the upper surface of the reduced diameter portion 123b of the holder 123 contacts the lower end of the upper flange 121a of the adapter body 121, thereby pulling the entire adapter body 121 I will try to raise it. In this holding state, the entire adapter body 121 is pulled up in the upward direction, so that the lower flange 121b is fixed in the circular groove 6b provided in the first partial wall 6A. In this way, the attachment of the gas introducing adapter 10A to the first partial wall 6A is completed.

<Action>

In the gas introduction adapter 10A, the direction in which the holder 123 expands due to thermal expansion and the direction in which at least the nut 125 expands due to thermal expansion are opposite to each other. This point will be described with reference to FIG. Fig. 12 shows a state in which the gas introduction adapter 10A is mounted on the first partial wall 6A as in Fig. When the plasma is generated in the treatment chamber in this state, thermal expansion occurs in the members constituting the inductively coupled plasma processing apparatus 1 by the heat of the plasma.

First, the first partial wall 6A made of a dielectric material such as quartz thermally expands in a direction indicated by a white arrow D0 in Fig. The reference position of the thermal expansion of the first partial wall 6A is the upper surface of the lower flange 121b fitted in the circular groove 6b of the first partial wall 6A. The adapter main body 121 made of ceramics constituting the gas introduction adapter 10A thermally expands in the direction indicated by the white arrow D1 in Fig. The reference position of the thermal expansion of the adapter main body 121 is the upper surface of the lower flange 121b fitted in the circular groove 6b of the first partial wall 6A. The spacer 126 and the nut 125 constituting the gas introducing adapter 10A also thermally expand in the direction indicated by the white arrow D2 in Fig. 12 by the heat of the plasma. The upper surface of the first partial wall 6A (the mounting surface of the spacer 126) is the reference position for the thermal expansion of the spacer 126 and the nut 125.

The thermal expansion amount of the first partial wall 6A is L0, the thermal expansion amount of the adapter body 121 is L1, and the total thermal expansion amount of the spacer 126 and the nut 125 is L2. The length of the white arrows D1 and D2 indicates the relative amount of thermal expansion. That is, the longer the length of the white arrows D0, D1, and D2, the larger the thermal expansion amounts L0, L1, and L2.

The thermal expansion amount L1 of the adapter main body 121 made of ceramics is smaller than the thermal expansion amount L0 of the first partial wall 6A and the thermal expansion amount L0 of the spacer 126 as shown in the comparison with the thermal expansion amounts L1 and L2. And the total thermal expansion amount L2 of the nut 125 (L1 < L0 + L2). Therefore, if a male screw structure is provided on the outer peripheral surface of the holder 123 and is directly fastened to the nut 125, the difference (L0 + L2) -L1 between the amount of thermal expansion L0 + Stress applied to the adapter main body 121 is applied to the adapter main body 121, which causes cracks or the like to be damaged.

In the inductively coupled plasma processing apparatus 1 of the present embodiment, the holder 123 for holding the adapter body 121 is configured to thermally expand in the opposite direction to the direction in which the spacer 126 and the nut 125 are thermally expanded , The stress applied to the adapter main body 121 is relaxed. More specifically, the holder 123 is fixed to the lower end of the ring-shaped male screw 124 which is fastened to the nut 125. This causes thermal expansion to occur in the thermal expansion amount L3 in the direction indicated by the white arrow D3 in Fig. 12, with the boundary (contact surface) between the ring-shaped male screw 124 and the holder 123 as the reference position. Here, it is also assumed that the length of the white arrow D3 indicates the relative amount of thermal expansion.

The material constituting the holder 123 expands in accordance with the inherent coefficient of linear thermal expansion of the material at the time of heating. For example, when a male screw structure is provided on the outer circumferential surface of the holder 123 and fastened directly to the nut 125 The direction of the thermal expansion of the holder 123 becomes the same direction as that of the spacer 126 and the nut 125. However, as in the present embodiment, the holder 123 is not directly coupled to the nut 125, but the ring-shaped male screw 124 is interposed between the holder 123 and the ring-shaped male screw 124, And the thermal expansion direction D3 of the holder 123 is connected in a direction opposite to the direction D2 of thermal expansion of the spacer 126 and the nut 125 so that the thermal expansion amount L2 and the thermal expansion amount (L0 + L2) -L1 of the holder L1 can be canceled by the thermal expansion amount L3 of the holder 123. [ That is, in the gas introduction adapter 10A of the present embodiment, the stress applied to the adapter main body 121 at the time of heating becomes a value corresponding to the difference in the amount of thermal expansion represented by [(L0 + L2) -L1] -L3. Therefore, stress applied to the adapter main body 121 is relieved, and occurrence of breakage such as cracking, breakage, and the like applied to the adapter main body 121 at the time of heating can be reliably prevented.

The coefficient of linear thermal expansion of the constituent material of the holder 123 is preferably at least larger than that of the constituent material of the nut 125 in order to maximize the stress relaxation action of the gas introduction adapter 10A of the present embodiment. Specifically, when a metal is used as the constituent material of the holder 123 and the nut 125, the nut 125 is made of a metal material having a relatively low linear thermal expansion coefficient such as titanium or tungsten And the holder 123 has a relatively large coefficient of linear thermal expansion. For example, a combination using stainless steel, aluminum, or the like is preferable.

The gas introduction adapter 10A for introducing the gas from the inside of the plane of the first partial cover 12A (the first partial wall 6A) has been described as an example. However, the gas introduction adapter 10B, The construction and operation of the gas introduction adapters 10C to 10H mounted on the second to fourth partial covers 12B to 12D (the second to fourth partial walls 6B to 6D) are the same.

<Outline of Processing Operation>

Next, the processing operation in the inductively coupled plasma processing apparatus 1 configured as described above will be described. Here, the case of performing the plasma etching treatment on the substrate S is exemplified. First, in a state in which the gate valve 27 is opened, the substrate S to be processed is carried into the processing chamber 5 by an external transfer device. The substrate S is mounted on the susceptor 22. Thereafter, the gate valve 27 is closed, and the evacuating device 30 evacuates the treatment chamber 5 to a predetermined degree of vacuum.

Next, a valve (not shown) is opened, and the process gas is supplied from the gas supply device 20 to the gas supply pipe 21, its branch pipe, the gas introduction path 201 formed in the hollow portion of the suspender 8A, Is introduced into the processing chamber 5 through the gas introducing path 202 formed in the beam 16, the gas introducing path 203 of the dielectric cover fastener 18 and the gas hole 204. [ The process gas is supplied from the gas supply device 20 to the gas introducing passages 211A to 211H formed respectively in the gas supply pipe 21 and its branches and the hollow portions of the suspenders 9A to 9H, To 10H through the gas flow path 221 of the shower head 130 and the gas diffusion portion 134 of the shower head 130 and the plurality of gas holes 133. The flow rate of the process gas is controlled by a mass flow controller (not shown), and the pressure in the process chamber 5 is maintained at a predetermined value. In the inductively coupled plasma processing apparatus 1 of the present embodiment, a plurality of gas introduction routes are provided and uniformly discharged to the substrate S in the processing chamber 5. [

In this state, high frequency electric power (for example, high frequency electric power of 13.56 MHz) for induction electric field formation is supplied to the antenna 13 from the high frequency electric power source 15 through the matching device 14, . The process gas is converted into plasma by the induced electric field. In this manner, the plasma etching process is performed on the substrate S. During the plasma etching process, high frequency power for bias (for example, high frequency power of 3.2 MHz) is supplied from the high frequency power supply 29 to the susceptor 22. With this high-frequency power, the ions in the plasma can be effectively introduced into the substrate S mounted on the susceptor 22. [

After the plasma etching treatment is performed for a predetermined time, the application of the high-frequency power from the high-frequency power source 15 is stopped and the introduction of gas from the gas supply device 20 is stopped. Thereafter, the pressure in the process chamber 5 is reduced to a predetermined pressure. Next, the gate valve 27 is opened, the substrate S is transferred from the susceptor 22 to an external transfer device, and the substrate S is taken out from the process chamber 5. By the above operation, the plasma etching process for the substrate S is completed.

In this way, in the inductively coupled plasma processing apparatus 1 of the present embodiment, in addition to the center position of the dielectric wall 6, the center of each of the first to fourth partial covers 12A, 12B, 12C, It is possible to introduce a gas into the processing chamber 5 from the vicinity of the processing chamber 5, so that a uniform plasma can be stably generated by the uniform diffusion of the gas in the processing chamber 5. [ The positions and positions of the suspenders 8A and 9A to 9H and the shape and arrangement of the showerhead 130 functioning as piping for supplying gas are not limited to the above embodiment, Of the total.

Since the flow rate of the gas from the gas supply device 20 using the suspenders 8A and 9A to 9H as piping can be independently controlled by the valve or the mass flow controller, The gas flow rate supplied through each of the suspenders 8A and 9A to 9H may be individually adjusted. Further, a gas supply pipe may be connected to each of the suspenders 8A, 9A to 9H from a plurality of gas supply devices 20 individually.

As described above, in the inductively coupled plasma processing apparatus 1 and the gas introduction adapters 10A to 10H of the present embodiment, the holder 123 for holding the adapter main body 121 of the gas introduction adapter is connected to the spacer 126 And the nut 125 are thermally expanded in the opposite direction to the direction of thermal expansion. Thus, the stress applied to the adapter main body 121 can be relaxed. Therefore, breakage of the adapter main body 121 made of ceramics can be prevented, and reliability and durability of the gas introduction adapter can be enhanced.

[Second Embodiment]

Next, an inductively coupled plasma processing apparatus according to a second embodiment of the present invention will be described with reference to Fig. The inductively coupled plasma processing apparatus according to the second embodiment is the same as the inductively coupled plasma processing apparatus 1 according to the first embodiment except for the structure of the gas introducing adapter, and thus description thereof will be omitted. 13 is a cross-sectional view showing the configuration of the gas introduction adapter 100 in the present embodiment. The configuration of the gas introducing adapter 100 is the same as that of the gas introducing adapter 10A to 10H (first embodiment) except that the connection structure between the holder as the holding member and the ring-shaped male thread 124 as the first fastening member is different. The same reference numerals are assigned to the same components, and a description thereof will be omitted.

The gas introduction adapter 100 has a hollow adapter body 121 as a "ceramic member" and a fixing mechanism 122A for fixing the adapter body 121 to the first partial wall 6A. The fixing mechanism 122A includes a ring-shaped male thread 124 as a first fastening member, a nut 125 as a second fastening member, and a fixing member 122A fixed on the upper surface of the first partial wall 6A around the adapter body 121 A holder 128 for holding the upper flange 121a of the adapter body 121 and a connection spacer member 122 interposed between the ring-shaped male screw 124 and the holder 128 129).

In the present embodiment, the holder 128 is composed of two parts 128A and 128B like the holder 123 of the first embodiment. The components 128A and 128B all have an arc shape. The difference from the holder 123 of the first embodiment is that the ends of the components 128A and 128B are not formed. The components 128A and 128B are opposed to each other and are combined to form a ring 128 as a whole. At the upper end of the holder 128, a plurality of fixing hole portions (not shown) used for fixing to the connection spacer member 129 are provided. The holder 128 has a shape that can fit into the groove portion 121c1 of the base portion 121c of the adapter body 121 while the components 128A and 128B are combined.

The connection spacer member 129 has a ring shape as a whole, and its inner diameter is larger than the outer diameter of the upper flange 121a of the adapter body 121. [ Therefore, the upper flange 121a of the adapter body 121 can be easily inserted into the ring-shaped connection spacer member 129. [

The ring-shaped male screw 124 is connected to the connection spacer member 129 from above the connection spacer member 129 by fixing means 127A such as a bolt. The connection spacer member 129 is connected to the holder 128 from above the holder 128 by a fixing means 127B such as a bolt or the like.

The connection spacer member 129 and the holder 128 thermally expand in a direction opposite to the nut 125 and the spacer 126 at the time of heating and function as stress relieving means for relieving the stress of the adapter main body 121. For this purpose, it is preferable that the connection spacer member 129 and the holder 128 are made of a metal having a relatively large coefficient of linear thermal expansion, such as stainless steel, as compared with at least the nut 125, for example.

The reason for using the connection spacer member 129 in the present embodiment is that firstly the thermal expansion is performed in the opposite direction to the nut 125 and the spacer 126 at the time of heating to relieve the stress of the adapter body 121. The larger the height (total thickness) of the member functioning as the stress relieving means, the larger the thermal expansion amount, and the stress relaxation function is enhanced. Therefore, in the present embodiment, by using the connection spacer member 129 in addition to the holder 128, it is possible to adjust the height of the member functioning as the stress relaxation means to be variable, can do. Further, when a material having a coefficient of linear thermal expansion greater than that of the holder 128 is used as the material of the connection spacer member 129, the stress relaxation function can be further enhanced. Further, by using a material having a large coefficient of linear thermal expansion as the connection spacer member 129, it is possible to use a material having a small coefficient of linear thermal expansion for the holder 128. Therefore, it is a member for supporting the adapter main body 121 while obtaining a necessary stress relieving effect, and it is possible to increase the degree of freedom in selecting the material of the holder 128 which requires a constant strength.

In the present embodiment, the second reason of using the connection spacer member 129 is that the holder 128 which is a combination member of a plurality of parts can be easily processed. The holder 123 of the first embodiment uses the holder component 123A and the holder component 123B having the end portion 123c on the inner circumferential surface. However, by interposing the connection spacer member 129, Shaped part 128A and the part 128B can be used in combination.

Other configurations and effects in this embodiment are the same as those in the first embodiment. In the present embodiment, the number of the connection spacer members 129 is not limited to one, but may be two or more.

The present invention is not limited to the above-described embodiments, and various modifications are possible. For example, although the inductively coupled plasma processing apparatus is exemplified in the above embodiment, the present invention can be applied to other types of plasma processing apparatuses and heat treatment apparatuses as long as the apparatus has a ceramics member and is mounted on a plate- .

1: Inductively Coupled Plasma Treatment Apparatus 2: Main Body Container
2a: Upper wall portion 4: Antenna room
5: Treatment chamber 6:
6A: first partial wall 6a: through opening
6b: Circular groove 7: Supporting shelf
9A: Suspender 10A: Gas outlet adapter
12: dielectric cover 12A: first partial cover
13: antenna 16: support beam
18: dielectric cover fixing member 111: pressure plate
121: Adapter body 121a: Upper flange
121b: Lower flange 121c:
121c1: groove portion 122:
123: Holder 123A, 123B: Holder component
124: ring-shaped male screw 124a: outer peripheral surface
125: nut 125a: inner peripheral surface
126: Spacer 127: Fixing means
130: shower head 131: upper plate
132: lower plate 133: gas hole
134: gas diffusion part 211A: gas introduction path
221: gas channel

Claims (17)

A main body container,
A processing chamber provided in the main body container to receive an object to be processed,
A plate-like member constituting a ceiling portion of the treatment chamber,
A gas supply device for supplying gas to the process chamber,
A gas introducing apparatus for introducing a gas into a processing chamber of a processing apparatus having a pipe for introducing gas from the gas supplying apparatus into the processing chamber,
A first flange portion having a size to be inserted into a through-hole formed in the plate-like member, and a second flange portion having a larger size than the through-hole, A member,
A holding member for contacting and holding the first flange portion of the ceramic member inserted into the through-hole,
A first fastening member connected to the holding member and having a first screw structure on an outer peripheral portion thereof,
And a second fastening member having a second screw structure screwed to the first screw structure on a cylindrical inner circumferential surface and fastened to the first fastening member,
The holding member and the first fastening member are connected so that the direction in which the holding member is elongated by thermal expansion and the direction in which the second fastening member is stretched by thermal expansion are opposite to each other
Gas introduction device. The method according to claim 1,
The holding member is coupled to the first flange portion of the ceramics member by pulling the second flange portion to the plate member by screwing the first fastening member and the second fastening member, And the fixing member is fixed to the plate-like member
Gas introduction device. 3. The method according to claim 1 or 2,
Characterized in that the holding member is constituted by a plurality of members forming a cylindrical body having a cylindrical portion and a reduced diameter portion projecting inward from the cylindrical portion in a combined state
Gas introduction device. 3. The method according to claim 1 or 2,
Wherein the first fastening member has a ring shape and an inner diameter thereof is larger than an outer diameter of the first flange portion of the ceramics member
Gas introduction device. 3. The method according to claim 1 or 2,
Wherein the coefficient of linear thermal expansion of the material constituting the holding member is larger than the coefficient of linear thermal expansion of the material constituting the second fastening member
Gas introduction device. 3. The method according to claim 1 or 2,
And the third member is interposed between the holding member and the first fastening member.
Gas introduction device. 3. The method according to claim 1 or 2,
Further comprising a spacer member fixed around the through-hole of the plate-like member,
And the second fastening member is screwed with the first fastening member so that the second fastening member is brought into contact with the spacer member and further fastened from the contacted state, Like member and moving the holding member in a direction away from the plate-like member to press the holding member fixed to the first engaging member against the first flange portion
Gas introduction device. 3. The method according to claim 1 or 2,
And the second fastening member is fastened so as to cover the first fastening member and the holding member from the outside
Gas introduction device. 3. The method according to claim 1 or 2,
Characterized in that the processing apparatus is an inductively coupled plasma processing apparatus
Gas introduction device. A main body container,
A processing chamber provided in the main body container to receive an object to be processed,
A plate-like member constituting a ceiling portion of the treatment chamber,
A gas supply device for supplying gas to the process chamber,
A pipe for introducing the gas from the gas supply device into the process chamber,
A gas introducing device for introducing gas into the treatment chamber by being mounted on the through-hole of the plate-like member,
And a high-frequency antenna disposed above the plate-like member and forming an induction field in the treatment chamber, the inductively coupled plasma processing apparatus comprising:
The gas-
A hollow ceramic member having a first flange portion having a size to be inserted into the through-hole and a second flange portion larger than the through-hole and connected to the pipe in a state of being inserted into the through-
A holding member for contacting and holding the first flange portion of the ceramic member inserted into the through-hole,
A first fastening member fixing the holding member and having a first screw structure on an outer peripheral portion thereof,
And a second fastening member having a second screw structure screwed into the first screw structure on the inner circumferential surface of the cylindrical shape and fastened to the first fastening member,
The holding member and the first fastening member are connected so that the direction in which the holding member is elongated by thermal expansion and the direction in which the second fastening member is stretched by thermal expansion are opposite to each other
An inductively coupled plasma processing apparatus. 11. The method of claim 10,
The holding member is coupled to the first flange portion of the ceramics member by pulling the second flange portion to the plate member by screwing the first fastening member and the second fastening member, And the fixing member is fixed to the plate-like member
An inductively coupled plasma processing apparatus. The method according to claim 10 or 11,
Characterized in that the holding member is constituted by a plurality of members forming a cylindrical body having a cylindrical portion and a reduced diameter portion projecting inward from the cylindrical portion in a combined state
An inductively coupled plasma processing apparatus. The method according to claim 10 or 11,
Wherein the first fastening member has a ring shape and an inner diameter thereof is larger than an outer diameter of the first flange portion of the ceramics member
An inductively coupled plasma processing apparatus. The method according to claim 10 or 11,
Wherein the coefficient of linear thermal expansion of the material constituting the holding member is larger than the coefficient of linear thermal expansion of the material constituting the second fastening member
An inductively coupled plasma processing apparatus. The method according to claim 10 or 11,
And the third member is interposed between the holding member and the first fastening member.
An inductively coupled plasma processing apparatus. The method according to claim 10 or 11,
Further comprising a spacer member fixed around the through-hole of the plate-like member,
And the second fastening member is screwed with the first fastening member so that the second fastening member is brought into contact with the spacer member and further fastened from the contacted state, Like member and moving the holding member in a direction away from the plate-like member to press the holding member fixed to the first engaging member against the first flange portion
An inductively coupled plasma processing apparatus. The method according to claim 10 or 11,
And the second fastening member is fastened so as to cover the first fastening member and the holding member from the outside
An inductively coupled plasma processing apparatus.

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