TWI835618B - Plasma treatment device - Google Patents

Abstract

The plasma treatment device of the present invention has an electrode flange, a chamber, an insulating flange, a processing chamber, a support part, and a high-frequency power supply. An insulating spacer portion defining a distance between the mounting flange and the electrode flange is disposed between the mounting flange and the electrode flange. The insulating spacer is embedded in the insulating flange.

Description

Plasma treatment device

The present invention relates to a plasma treatment device.

Conventionally, there have been known plasma processing apparatuses that use plasma to decompose raw material gases, for example, to form a thin film on a film-forming surface of a substrate. In this plasma processing apparatus, for example, as shown in Patent Documents 1 and 2, a processing chamber is constituted by a chamber, an electrode flange, and an insulating flange sandwiched between the chamber and the electrode flange. The processing chamber has a film-forming space (reaction chamber).

In the processing chamber, a spray plate and a heater equipped with a substrate are provided. The spray plate is connected to the electrode flange and has a plurality of spray outlets. A space is formed between the spray plate and the electrode flange. This space is a gas introduction space into which raw material gas is introduced. That is, the shower plate divides the space in the processing chamber into a film formation space for forming a film on the substrate and a gas introduction space.

In addition, like the technology disclosed in Patent Document 1, the insulating flange is attached to the mounting flange of the chamber. The insulating flange insulates the mounting flange from the cathode flange (electrode flange). [Prior technical literature] [Patent Document]

[Patent Document 1] International Publication No. 2010/079753 [Patent Document 2] Japanese Patent No. 5883652

[Problem to be solved by the invention]

Here, the insulating flange is sandwiched between the mounting flange and the cathode flange (electrode flange) in a sealed processing chamber (chamber) in a process chamber that is depressurized during processing. Therefore, the dead weight of the cathode flange and the decompressed atmospheric pressure act on the insulating flange. Thereby, the insulating flange is pressed against the cathode flange and the mounting flange of the chamber. In addition, the insulating flange is accompanied by the substrate heated during processing and is affected by the heating of the heater.

Due to the above reasons, there is a possibility that the thickness of the insulating flange may deform and change. If the thickness of the insulating flange changes, the distance between the shower plate and the substrate may change. If the distance between the shower plate and the substrate changes, the distance between the electrodes changes, which affects the supplied air flow state. Therefore, the plasma generation state is affected, making it difficult to implement a plasma treatment step that maintains film formation reproducibility. As a result, there is a problem that the film-forming characteristics of the film formed on the substrate by the plasma processing apparatus may be affected.

The present invention has been accomplished in view of the above-mentioned circumstances, and is intended to achieve the following objects. 1. Suppress changes in the distance between the electrode flange (cathode flange) and the substrate. 2. Suppress changes in airflow. 3. Realize the plasma treatment step to maintain the reproducibility of film formation. 4. Prevent changes in plasma distribution generated in plasma treatment equipment and improve the stability of treatment characteristics. [Technical means to solve problems]

In order to solve the above problem, a plasma processing apparatus according to one aspect of the present invention has the following configuration. A plasma treatment device according to an aspect of the present invention has: an electrode flange; a chamber having a bottom, a side wall having an end portion forming an end opening, and a mounting flange provided on the end portion, and is connected to the electrode Flange insulation; an insulating flange disposed between the above-mentioned mounting flange and the above-mentioned electrode flange; a processing chamber consisting of the above-mentioned chamber, the above-mentioned electrode flange and the above-mentioned insulating flange and having a reaction chamber; a support part, It is stored in the above-mentioned reaction chamber, places a substrate with a processing surface and can control the temperature of the above-mentioned substrate; a high-frequency power supply connected to the above-mentioned electrode flange and applying a high-frequency voltage to the above-mentioned electrode flange; and an insulating spacer part, which It is arranged between the above-mentioned mounting flange and the above-mentioned electrode flange at a predetermined distance. The insulating spacer is embedded in the insulating flange. In the plasma processing apparatus according to one aspect of the present invention, the insulating spacer may have a columnar shape and be embedded in the gap formed in the insulating flange. A plasma processing apparatus according to an aspect of the present invention is provided with a plurality of the above-mentioned insulating spacer parts, each of which is the same as the above-mentioned insulating spacer part. The plurality of insulating spacers may also be spaced apart along the periphery of the insulating flange. In the plasma processing apparatus according to one aspect of the present invention, the insulating spacer may have a protrusion extending in an extending direction of the insulating spacer, and either the mounting flange or the electrode flange may have a recess. , the above-mentioned protruding part is accommodated in the above-mentioned recessed part in a manner corresponding to the above-mentioned recessed part. In the plasma processing apparatus according to one aspect of the present invention, the insulating spacer may have an end portion in an extending direction of the insulating spacer, and the insulating spacer may have an amplification part that increases the size of the insulating spacer, and the amplification may The part is arranged at the above-mentioned end. The plasma processing device according to one aspect of the present invention may also include a sealing mechanism disposed along the periphery of the insulating flange and spaced apart from the insulating spacer in the radial direction.

A plasma treatment device according to an aspect of the present invention has: an electrode flange; a chamber having a bottom, a side wall having an end portion forming an end opening, and a mounting flange provided on the end portion, and is connected to the electrode Flange insulation; an insulating flange disposed between the above-mentioned mounting flange and the above-mentioned electrode flange; a processing chamber consisting of the above-mentioned chamber, the above-mentioned electrode flange and the above-mentioned insulating flange and having a reaction chamber; a support part, It is stored in the above-mentioned reaction chamber, places a substrate with a processing surface and can control the temperature of the above-mentioned substrate; a high-frequency power supply connected to the above-mentioned electrode flange and applying a high-frequency voltage to the above-mentioned electrode flange; and an insulating spacer part, which It is arranged between the above-mentioned mounting flange and the above-mentioned electrode flange at a predetermined distance; and the above-mentioned insulation spacer is embedded in the above-mentioned insulation flange.

According to the above structure, the mounting flange and the electrode flange can be insulated by the insulating flange. The insulating flange can be separated and sealed between the mounting flange and the electrode flange. In the insulating flange pressed in the thickness direction by atmospheric pressure or the self-weight of the electrode flange, the separation distance between the mounting flange and the electrode flange can be maintained constant by the insulating spacer. The distance between the mounting flange and the electrode flange may not be changed. At this time, both ends of the insulating spacer are in contact with the mounting flange and the electrode flange.

Thereby, even when the flexible insulating flange is deformed, the distance between the electrodes in plasma processing, that is, the distance between the shower plate and the substrate can be maintained. It can inhibit the deformation of the insulating flange from affecting the plasma generation state. That is, the insulating spacer functions as a pillar arranged between the mounting flange and the electrode flange, thereby suppressing shrinkage of the insulating flange. The stability of the distance between the spray plate and the substrate can be improved.

Here, the statement "the distance between electrodes in plasma processing is the distance between the spray plate and the substrate", in other words, can be called "the height of the spray plate supported by the electrode plate in plasma processing relative to the bottom of the chamber" . In addition, this statement refers to the distance between the shower plate and the substrate in a state where the height position of the substrate is set to a predetermined height by driving the lifting drive unit.

In addition, in order to seal between the mounting flange and the electrode flange, sealing members such as the insulating flange need to be deformed. As the sealing member such as the insulating flange deforms, the mounting flange and the electrode flange are tilted, thereby preventing the distance between the mounting flange and the electrode flange from being uneven in the circumferential direction of the chamber.

The insulating flange is made of flexible material. The insulating flange may include resin with heat resistance, gas resistance, and vacuum resistance, such as fluororesin. In addition, it has insulating properties and has the required compressive strength. The insulating spacer may be formed of ceramic such as sintered alumina or the like.

In the plasma processing apparatus according to one aspect of the present invention, the insulating spacer has a columnar shape and is embedded in a gap formed in the insulating flange.

According to the above configuration, the separation distance between the mounting flange and the electrode flange can be maintained constant by the insulating spacer. The insulating spacer can be installed only by forming a gap in the insulating flange. Therefore, the electrode distance can be maintained without adding other components. At the same time, only the insulating spacer can be inserted into the gap to assemble the insulating flange and the insulating spacer. Therefore, the time required for disassembly and assembly work such as maintenance can be shortened. At the same time, the steps of disassembly and assembly can be reduced.

Here, the gap formed in the insulating flange receiving insulating partition portion may be a through hole that penetrates the insulating flange in the thickness direction. Alternatively, the gap formed in the insulating flange receiving insulating partition portion may also be a notch that penetrates the insulating flange in the thickness direction and is opened at the periphery of the insulating flange.

A plasma processing apparatus according to an aspect of the present invention is provided with a plurality of the above-mentioned insulating spacer parts, each of which is the same as the above-mentioned insulating spacer part. The plurality of insulating spacers are spaced apart along the periphery of the insulating flange.

According to the above structure, when the electrode flange and the shower plate are removed, the separation distance between the mounting flange and the electrode flange can be maintained constant throughout the entire circumference of the mounting flange having the end opening of the chamber. . Therefore, the spray plate and the base plate will not tilt. Also, it is easy to maintain the sealing of the cavity in the insulating flange.

In the plasma processing apparatus according to an aspect of the present invention, the insulating spacer has a protrusion extending in a direction in which the insulating spacer extends, and either the mounting flange or the electrode flange has a recess, and the above-mentioned The protruding portion is accommodated in the recessed portion in a manner corresponding to the recessed portion.

According to the above configuration, by housing the protruding portion of the insulating spacer portion in the recessed portion, the insulating spacer portion can be attached to either the mounting flange or the electrode flange in which the recessed portion is formed. At the same time, by setting the length direction of the protruding portion and the recessed portion along the axis of the column of the insulating spacer to a predetermined value, the separation distance between the mounting flange and the electrode flange can be maintained constant. Moreover, this state can be maintained. At the same time, the protruding portion and the recessed portion can be used to limit the radial position of the insulating spacer relative to the mounting flange and the electrode flange. The member that restricts the radial position between the insulating spacer part and the mounting flange or between the insulating spacer part and the electrode flange may be omitted, and such a member may not be provided in the plasma processing device.

Moreover, the external thread part and the internal thread part may be formed respectively with respect to the protruding part and the recessed part. In this case, the insulating spacer part and the mounting flange, or the insulating spacer part and the electrode flange may be fixed to each other. In addition, protrusions may also be provided at both ends of the columnar insulating spacer. In this case, a recess may be formed in both the mounting flange and the electrode flange.

In the plasma processing apparatus according to one aspect of the present invention, the insulating spacer has an end portion in an extending direction of the insulating spacer, the insulating spacer has an amplifying portion that increases in size of the insulating spacer, and the amplifying portion Set on the above-mentioned end.

According to the above configuration, the amplifying portion can press the insulating flange attached to either the mounting flange or the electrode flange through the protruding portion, thereby improving workability. In this case, the enlarged portion may be formed at an end portion opposite to the protruding portion.

A plasma processing device according to one aspect of the present invention has a sealing mechanism arranged along the periphery of the insulating flange and radially spaced apart from the insulating spacer. The sealing mechanism is, for example, an O-ring.

According to the above structure, the mounting flange and the electrode flange can be insulated and sealed by the insulating flange, and at the same time, the mounting flange and the electrode flange can be sealed by the sealing mechanism. The surface where the electrode flange and the insulating flange meet is a vacuum sealing surface, and a sealing mechanism (O-ring) is sandwiched between the electrode flange and the insulating flange for sealing. The surface where the mounting flange and the insulating flange meet is the vacuum sealing surface, and a sealing mechanism (O-ring) is sandwiched between the mounting flange and the insulating flange for sealing. [Effects of the invention]

According to the present invention, variation in the distance between the electrode flange and the substrate can be suppressed. Plasma treatment steps that maintain film formation reproducibility can be achieved. It can prevent changes in plasma distribution produced in plasma treatment equipment. Can improve the stability of processing characteristics.

<First Embodiment> Hereinafter, the plasma processing apparatus according to the first embodiment of the present invention will be described based on the drawings. FIG. 1 is a schematic longitudinal cross-sectional view showing the plasma processing apparatus of this embodiment. In Figure 1, symbol 1 is a plasma treatment device. In addition, in each of the drawings used in the following description, in order to set each component to a size that can be recognized in the diagram, the size and ratio of each component may be appropriately different from the actual size.

＜Plasma treatment device 1＞ The plasma processing apparatus 1 of this embodiment is a film forming apparatus using a plasma CVD (Chemical Vapor Deposition) method. As shown in FIG. 1 , the plasma processing apparatus 1 includes a processing chamber 3 having a film forming space 2 a which is a reaction chamber. The processing chamber 3 is composed of a vacuum chamber 2 (chamber), a cathode flange 4 (electrode flange), and an insulating flange 100 .

＜Vacuum Chamber 2＞ The vacuum chamber 2 has: a bottom 11 (inner bottom surface); side walls 24 (walls) standing from the periphery of the bottom 11; and a mounting flange 21 provided around the end opening of the side wall 24. The vacuum chamber 2 is formed of aluminum or aluminum alloy.

A bottom opening is formed on the bottom 11 of the vacuum chamber 2 . The support 16 is inserted into the bottom opening. The support 16 is arranged at the lower part of the vacuum chamber 2 . The front end of the pillar 16 is located in the vacuum chamber 2 . A plate-shaped base 15 (support part) is connected to the front end of the pillar 16 . The bottom 11 and the side walls 24 are formed of aluminum or aluminum alloy.

The pillar 16 is connected to the lifting drive part 16A (lifting mechanism) provided outside the vacuum chamber 2 . The pillar 16 is movable in the up and down direction by the lifting and lowering driving part 16A. That is, the base 15 connected to the front end of the support 16 is configured to be raised and lowered in the up and down direction.

A bellows (not shown) is provided outside the vacuum chamber 2 so as to cover the outer periphery of the support 16 . By means of the corrugated tube, when the support 16 moves up and down, the sealing of the film forming space 2a is maintained.

An exhaust pipe 27 is connected to the vacuum chamber 2 at a position closer to the bottom 11 than the base 15 . At the front end of the exhaust pipe 27, a vacuum pump 28 is provided. The vacuum pump 28 reduces the pressure in the vacuum chamber 2 so that it becomes a vacuum state.

<Mounting flange 21> A mounting flange 21 is provided on the upper end of the side wall 24 of the vacuum chamber 2 . The mounting flange 21 is disposed around the side wall 24 in a manner that projects radially outward from the end opening of the side wall 24 . The side wall 24 and the mounting flange 21 are each made of conductive material. The side wall 24 and the mounting flange 21 can be integrated or formed into different components. For example, when the side wall 24 and the mounting flange 21 are made of different components, an O-ring-like sealing member may be disposed between the side wall 24 and the mounting flange 21 . The side wall 24 and the mounting flange 21 are formed of aluminum, aluminum alloy, or the like. The upper surface 21a of the mounting flange 21 has a substantially horizontal planar shape.

<Cathode flange 4, spray plate 5> The cathode flange 4 is separated from the insulating flange 100 and installed on the upper part of the vacuum chamber 2 . The shape of the cathode flange 4 is substantially flat. The cathode flange 4 covers the end opening of the chamber 2 formed by the mounting flange 21 . The cathode flange 4 has a peripheral edge portion 4a. The lower surface of the peripheral portion 4a of the cathode flange 4 faces the upper surface 21a of the mounting flange 21. The lower surface of the peripheral portion 4a of the cathode flange 4 is located substantially parallel to the upper surface 21a of the mounting flange 21.

A shielding cover can be placed above the cathode flange 4 . Below the cathode flange 4, shower plates 5 are arranged at intervals in the up and down direction. The spray plate 5 is located below the cathode flange 4 and radially inward of the mounting flange 21 . The shower plate 5 is arranged parallel to the lower surface of the cathode flange 4 . The shower plate 5 depends from the cathode flange 4 . The shower plate 5 is supported by a support column 4b extending downward from the lower surface of the cathode flange 4 . The support column part 4b is made of a conductor. The number of support pillars 4b is plural. The supporting column portion 4b does not need to be composed of a plurality of members. For example, the shape of the supporting pillar portion 4b may be a frame shape when viewed from above the cathode flange 4. In this case, the frame-shaped support column part 4b is arranged inside the insulating support part 8.

The cathode flange 4 and the shower plate 5 are electrically connected through the supporting column portion 4b. An insulating support portion 8 is arranged outside the peripheral portion of the shower plate 5 . The insulating support part 8 is arranged radially outside the shower plate 5 . The insulating support portion 8 is located radially inward of the mounting flange 21 . The insulating support portion 8 and the mounting flange 21 are radially spaced apart from each other. The upper end of the insulating support portion 8 hangs from the cathode flange 4 .

A shower plate 5 is connected to the radial inner side of the insulating support part 8 . The radially inner contour of the lower end of the insulating support portion 8 is set in a manner to limit the exposure range of the cathode flange 4 and the shower plate 5 in the film formation space 2a. The insulation support part 8 functions as an electrode insulation cover. The cathode flange 4 and the shower plate 5 are spaced apart in the up and down direction and are arranged approximately parallel to each other. Thereby, a space 2 c is formed between the cathode flange 4 and the shower plate 5 .

The lower surface 4c of the cathode flange 4 faces the shower plate 5. A gas inlet 7a is provided through the cathode flange 4 . Furthermore, a gas introduction pipe 7 is provided between the processing gas supply part 7b provided outside the processing chamber 3 and the gas introduction port 7a.

One end of the gas introduction pipe 7 is connected to the gas introduction port 7a. The other end of the gas introduction pipe 7 is connected to the processing gas supply part 7b. The gas introduction pipe 7 penetrates the shielding cover. The processing gas is supplied from the processing gas supply part 7b to the space 2c through the gas introduction pipe 7.

The space 2c functions as a gas introduction space into which the processing gas is introduced. A plurality of gas ejection ports 6 are formed on the shower plate 5 . The processing gas introduced into the space 2 c is ejected from the gas ejection port 6 to the film forming space 2 a in the vacuum chamber 2 .

The cathode flange 4 and the shower plate 5 are each made of conductive material. A shielding cover may also be provided around the cathode flange 4 to cover the cathode flange 4 . In this case, the shielding cover and the cathode flange 4 are not in contact. The shielding cover is configured to be electrically connected to the vacuum chamber 2 .

The cathode flange 4 is connected to a high-frequency power supply 9 (high-frequency power supply) provided outside the vacuum chamber 2 via a matching box 12 . The matching box 12 is installed on the shielding cover. The cathode flange 4 and the shower plate 5 serve as cathode electrodes. The vacuum chamber 2 is grounded via a shielding cover. The lower end of the peripheral edge of the shielding cover can also be installed in contact with the outer periphery of the mounting flange 21 .

＜Base 15＞ The base 15 is a plate-shaped member with a flat surface. The substrate 10 is placed on the upper surface of the base 15 . The base 15 is formed such that the normal direction of the mounted substrate 10 is parallel to the axis of the support 16 . The base 15 may have a built-in heater 14 . The base 15 can also use the heater 14 to heat and adjust the temperature of the mounted substrate 10 .

The base 15 functions as a ground electrode, that is, an anode electrode. Therefore, the base 15 is formed of conductive metal or the like. For example, the base 15 is formed of aluminum, aluminum alloy, or the like.

The base 15 is a member whose surface is treated with anti-corrosion aluminum on aluminum or aluminum alloy. If the substrate 10 is disposed on the base 15, the substrate 10 and the shower plate 5 are close to each other and are parallel to each other. The upper surface of the base 15 remains parallel to the upper surface 21a of the mounting flange 21 . The upper surface of the base 15 remains parallel to the upper surface 21 a of the mounting flange 21 even when the elevation driving portion 16A moves in the up and down direction and the height position changes.

When the processing gas is ejected from the gas inlet 7 a while the substrate 10 is placed on the base 15 , the processing gas is supplied to the space on the processing surface 10 a of the substrate 10 . The base 15 and the substrate 10 are heated by the heater 14 inside the base 15 . Thereby, the temperature of the substrate 10 is adjusted to a predetermined temperature. The heater 14 is connected to a power source 14b outside the vacuum chamber 2 via a heating wire 14a inserted through a through-hole formed in the substantially central portion of the base 15 and the support 16 . The heating wire protrudes downward from the back surface of the substantially central portion of the base 15 when viewed from the vertical direction of the base 15 . The power supply 14b adjusts the temperatures of the base 15 and the substrate 10 based on the power supplied to the heater 14.

A substrate insulation cover may also be provided on the upper surface of the base 15 at a position adjacent to the radially outer side of the substrate 10 . The substrate insulating cover surrounds the substrate 10 . The substrate insulation cover is disposed around the entire circumference of the substrate 10 . The height of the substrate insulating cover can protrude upward from the processing surface 10 a of the substrate 10 . The height of the substrate insulating cover is, for example, the same as the processing surface 10 a of the substrate 10 . The height of the substrate insulation cover may be lower than the processing surface 10a of the substrate 10.

<Gate valve 26a> The side wall 24 of the vacuum chamber 2 is formed with an unloading and unloading portion 26 (unloading and unloading entrance) used for unloading and unloading the substrate 10 . On the outer side of the side wall 24 of the vacuum chamber 2, a gate valve 26a that opens and closes the carry-in and carry-out portion 26 is provided. The gate valve 26a can slide in the up and down direction, for example.

When the gate valve 26a slides downward (in the direction facing the bottom 11 of the vacuum chamber 2), the carry-in and carry-out portion 26 opens. In this state, the substrate 10 can be loaded or unloaded into the vacuum chamber 2 . On the other hand, when the gate valve 26a slides upward (in the direction facing the cathode flange 4), the carry-in and carry-out portion 26 closes. In this state, the substrate 10 can be processed (film forming process).

＜Insulation flange 100＞ FIG. 2 is an enlarged cross-sectional view showing the area near the insulating flange of the plasma processing device according to this embodiment. FIG. 3 is a perspective view showing the area near the insulating flange and the insulating spacer of the plasma processing device according to this embodiment. FIG. 4 is a perspective view showing the insulating flange and sealing mechanism of the plasma processing device according to this embodiment. In addition, in FIG. 4 , the cathode flange 4 is omitted. The insulating flange 100 is disposed between the mounting flange 21 and the cathode flange 4 .

The insulating flange 100 is clamped to the mounting flange 21 and the cathode flange 4 of the vacuum chamber 2 . Specifically, as shown in FIGS. 1 to 4 , the insulating flange 100 is sandwiched between the lower surface 4 c of the peripheral portion 4 a of the cathode flange 4 and the upper surface 21 a of the mounting flange 21 . The insulating flange 100 extends along the entire circumference of the end opening of the chamber 2 . The inner peripheral edge of the insulating flange 100 has the same contour shape as the inner peripheral edge of the mounting flange 21 . The inner peripheral shape of the insulating flange 100 is the same contour shape as the inner peripheral contour of the mounting flange 21 when viewed from the upper surface of the cathode flange 4 . The outer peripheral edge of the insulating flange 100 has the same contour shape as the outer peripheral edge of the cathode flange 4 . The outer peripheral shape of the insulating flange 100 is the same contour shape as the outer peripheral contour of the cathode flange 4 when viewed from the upper surface of the cathode flange 4 .

The insulating flange 100 has a uniform thickness dimension along the circumferential direction of the end opening of the chamber 2 and the entire circumference of the mounting flange 21 . The insulating flange 100 has a uniform thickness dimension in the entire width direction in the radial direction relative to the end opening of the chamber 2 . That is, the cross-sectional shape of the insulating flange 100 is rectangular. The upper surface 100a of the insulating flange 100 is parallel to the lower surface 100b.

The upper surface 100a of the insulating flange 100 is in contact with the lower surface 4c of the peripheral portion 4a of the cathode flange 4 over the entire upper surface 100a. The lower surface 100b of the insulating flange 100 is in contact with the upper surface 21a of the mounting flange 21 over the entire lower surface 100b. In addition, when the upper surface 100a of the insulating flange 100 is in contact with the lower surface 4c of the peripheral portion 4a of the cathode flange 4, the plasma processing apparatus 1 is in processing or in preparation for processing. When the lower surface 100b of the insulating flange 100 is in contact with the upper surface 21a of the mounting flange 21 over the entire lower surface 100b, the plasma processing apparatus 1 is in processing or in preparation for processing.

That is, when the pressure in the chamber 2 is not reduced and the cathode flange 4 is not pressed against the mounting flange 21, the insulating flange 100 may also have the upper surface 100a or the lower surface 100b not in contact with the lower surface 4c or the upper surface 21a. state of connection.

The insulating flange 100 includes flexible insulating material. The insulating flange 100 has sufficient heat resistance during plasma processing. The insulating flange 100 has sufficiently low gas release in vacuum ambient gases during plasma processing. The insulating flange 100 has sufficient sealing properties during plasma processing. Specifically, the insulating flange 100 may be made of fluororesin or the like.

A plurality of through holes 101 (gaps) are formed in the insulating flange 100 . Each of the plurality of through holes 101 penetrates the insulating flange 100 in the thickness direction. Each of the plurality of through holes 101 is opened on the upper surface 100a and the lower surface 100b. Each of the plurality of through-holes 101 has the same cross-sectional shape along the entire length in the up-down direction. The plurality of through holes 101 are arranged at intervals along the extending direction of the insulating flange 100 , that is, the entire circumference of the end opening of the chamber 2 . A through hole 101 is formed in the width direction of the insulating flange 100 . Each of the plurality of through holes 101 has the same shape. The cross-sectional shape in the horizontal direction of each of the plurality of through holes 101 has a substantially circular shape in this embodiment.

A plurality of fixing through holes 102 are formed on the insulating flange 100 . A plurality of fixed through holes 102 are arranged along the entire circumference of the end opening of the chamber 2 . Each of the plurality of fixed through-holes 102 is provided at a position spaced apart from the plurality of through-holes 101 . In other words, the fixed through hole 102 is provided between, for example, two through holes 101 . Fastening bolts 102 a for fixing the cathode flange 4 and the mounting flange 21 are passed through the fixing through-hole 102 . The fastening bolt 102a is fastened to the fastening hole 102c of the cathode flange 4 via the insulating bushing 102b. The fastening bolt 102a is threaded into the internal thread portion 102d formed on the mounting flange 21.

A plurality of position limiting recesses 103 are formed on the insulating flange 100 . A plurality of position limiting recesses 103 are arranged in a direction along the entire circumference of the end opening of the chamber 2 . Each of the plurality of position regulating recessed portions 103 is provided at a position spaced apart from the plurality of through-holes 101 and the fixing through-hole 102 . Each of the plurality of position limiting recesses 103 is opened on the lower surface 100b of the insulating flange 100 . Each of the plurality of position limiting recesses 103 does not penetrate the insulating flange 100 in the thickness direction. Each of the plurality of position regulating recesses 103 accommodates a position regulating protrusion 103 a protruding from the upper surface 21 a of the mounting flange 21 . The position limiting convex portion 103a is formed by the bolt head of the position limiting bolt 103c that is screwed into the internal thread recess 103b formed in the mounting flange 21.

<Insulation spacer 110> FIG. 5 is a perspective view showing the insulating partition portion of the plasma processing apparatus according to this embodiment. As shown in FIG. 2 , a plurality of insulating spacers 110 are accommodated in a plurality of through holes 101 of the insulating flange 100 in a one-to-one correspondence. As shown in FIGS. 1 to 5 , each of the plurality of insulating spacers 110 is arranged between the mounting flange 21 and the cathode flange 4 . Each of the plurality of insulating spacers 110 defines a separation distance between the mounting flange 21 and the cathode flange 4 . The shape of each of the insulating spacers 110 is columnar. Each of the plurality of insulating spacers 110 has the same cross-sectional shape throughout its entire length in the up-down direction. In the following description, the description of each of the plurality of insulating spacers 110 is simply called "the insulating spacer 110".

The insulating spacer 110 has a strength that does not change in size even if it is pressed in the vertical direction. The insulating spacer 110 includes an insulating material that can maintain insulation between the mounting flange 21 and the cathode flange 4 . The insulating spacer 110 is formed of aluminum oxide, for example. The insulating spacer 110 may include sintered alumina. Alternatively, the insulating spacer 110 may be made of glass or the like.

In the insulating spacer 110, the upper end surface 110a and the lower end surface 110b are parallel. The upper end surface 110a of the insulating spacer 110 is in contact with the lower surface 4c of the peripheral portion 4a of the cathode flange 4 over the entire upper end surface 110a. The lower end surface 110b of the insulating spacer 110 is in contact with the upper surface 21a of the mounting flange 21 over the entire lower end surface 110b.

The insulating spacer 110 is embedded in the through hole 101 . The cross-sectional shape of the insulating spacer 110 in the horizontal direction is substantially the same as the cross-sectional shape of the through hole 101 in the horizontal direction. The plurality of insulating spacers 110 are arranged along the periphery of the insulating flange 100 so as to correspond to all the through holes 101 . The two adjacent through holes 101 are spaced apart along the periphery of the insulating flange 100 . The plurality of insulating spacers 110 all have the same shape. The plurality of insulating spacers 110 have the same size in the up and down directions. The size of the insulating spacer 110 in the up-down direction is the distance between the upper end surface 110a and the lower end surface 110b. The size of the insulating spacer 110 in the up-down direction is set to be approximately equal to or slightly smaller than the thickness of the insulating flange 100 .

When the upper end surface 110a of the insulating spacer 110 is in contact with the lower surface 4c of the peripheral portion 4a of the cathode flange 4, the plasma processing apparatus 1 is in processing or in preparation for processing. When the lower end surface 110b of the insulating spacer 110 is in contact with the upper surface 21a of the mounting flange 21 over the entire lower end surface 110b, the plasma processing apparatus 1 is in processing or in preparation for processing.

That is, when the pressure in the chamber 2 is not reduced and the cathode flange 4 is not pressed against the mounting flange 21, the insulating spacer 110 may also have an upper end surface 110a or a lower end surface 110b that is not in contact with the lower surface 4c or the upper surface 21a. state of connection.

<O-ring 105a, 106a> O-rings 105a and 106a (sealing mechanism) are arranged on the insulating flange 100. O-rings 105a and 106a are arranged along the periphery of the insulating flange 100. The O-rings 105a and 106a are radially spaced apart from the through-hole 101. Each of the O-rings 105a and 106a can also be called a first O-ring (first sealing mechanism) and a second O-ring (second sealing mechanism). In this embodiment, the O-rings 105a and 106a are arranged radially inward of the through-hole 101, that is, closer to the processing chamber 3 of the chamber 2 than the through-hole 101.

The O-ring 105a is accommodated in the O-ring groove 105. The O-ring 105a is in contact with the lower surface 4c of the peripheral portion 4a of the cathode flange 4. The O-ring groove 105 is formed on the upper surface 100a of the insulating flange 100. The O-ring groove 105 is formed continuously around the entire circumference of the end opening of the chamber 2 in the insulating flange 100 . The O-ring groove 105 is formed at a position radially spaced apart from the through hole 101 . The O-ring 105a is continuous around the entire circumference of the end opening of the chamber 2 in the insulating flange 100.

The O-ring 106a is received in the O-ring groove 106. The O-ring 106a is in contact with the upper surface 21a of the mounting flange 21. O-ring groove 106 is formed on lower surface 100b of insulating flange 100. The O-ring groove 106 is formed continuously around the entire circumference of the end opening of the chamber 2 in the insulating flange 100 . The O-ring groove 106 is formed at a position radially spaced apart from the through hole 101 . The O-ring 106a is continuous around the entire circumference of the end opening of the chamber 2 in the insulating flange 100.

The O-ring groove 105 and the O-ring groove 106 are formed at approximately the same position when viewed from the upper surface of the cathode flange 4 . The O-ring groove 105 and the O-ring groove 106 have approximately the same width dimension when viewed from the upper surface of the cathode flange 4 . The O-ring groove 105 and the O-ring groove 106 have approximately the same depth dimension. The O-ring 105a and the O-ring 106a have approximately the same diameter size (thickness size).

<Operation of plasma processing device 1> Next, the operation of forming a film on the processing surface 10a of the substrate 10 using the plasma processing apparatus 1 will be described.

Before starting plasma treatment, prepare the device.

＜Preparation steps＞ First, the O-ring 106a is received in the O-ring groove 106 in the lower surface 100b of the insulating flange 100.

In this state, the insulating flange 100 is placed on the upper surface 21 a of the mounting flange 21 located at the upper end of the side wall 24 of the chamber 2 . At this time, the position of the position regulating recessed portion 103 is aligned with the position of the position regulating protruding portion 103a. In this state, the position regulating protruding portion 103a is inserted into the position regulating recessed portion 103. In this way, the fixing through hole 102 is aligned with the fastening hole 102c. At the same time, the O-ring 106a comes into contact with the upper surface 21a of the mounting flange 21. At this time, the entire lower surface 100b of the insulating flange 100 may not be in contact with the upper surface 21a of the mounting flange 21.

Then, the lower opening of the through hole 101 is in a state of being substantially closed by the upper surface 21 a of the mounting flange 21 . Here, the plurality of insulating spacers 110 are inserted into all the plurality of through holes 101 in a one-to-one correspondence. At this time, the insertion position of the insulating spacer 110 is set so that the upper end surface 110 a of the insulating spacer 110 and the upper surface 100 a of the insulating flange 100 become substantially flush. Similarly, the insertion position of the insulating spacer 110 is set so that the lower end surface 110b of the insulating spacer 110 and the lower surface 100b of the insulating flange 100 become substantially flush. Alternatively, the insertion position of the insulating spacer 110 can be set such that the lower end surface 110b of the insulating spacer 110 contacts the upper surface 21a of the mounting flange 21. In addition, before placing the insulating flange 100 on the upper surface 21 a of the mounting flange 21 , the insulating spacer 110 may be inserted into each of the plurality of through holes 101 .

Next, the O-ring 105a is accommodated in the O-ring groove 105 in the upper surface 100a of the insulating flange 100. In addition, the O-ring 105a may be accommodated in the O-ring groove 105 before the insulating flange 100 is placed on the upper surface 21a of the mounting flange 21.

Next, the cathode flange 4 is placed on the upper surface 100a of the insulating flange 100 in contact with the lower surface 4c of the peripheral portion 4a. At this time, since the shower plate 5 is also integrally installed on the cathode flange 4 via the support column portion 4b and the insulating support portion 8, the shower plate 5 is also installed at the same time. Alternatively, the shower plate 5 may be installed before the cathode flange 4 . At this time, positioning is performed so that the axes of the fastening hole 102c, the fixing through-hole 102, and the internal thread portion 102a are aligned.

Next, in a state where the fastening bolt 102a is inserted into the insulating bushing 102b, the fastening bolt 102a is screwed into the internal thread portion 102d. Thereby, the cathode flange 4 is fixed to the mounting flange 21 . At this time, the insulating flange 100 is sandwiched between the lower surface 4c of the peripheral portion 4a of the cathode flange 4 and the upper surface 21a of the mounting flange 21. Furthermore, the insulating flange 100 is pressed up and down by the dead weight of the cathode flange 4 and the tightening force of the fastening bolt 102a. Due to this pressing force, the insulating flange 100 is compressed and deformed in the vertical direction.

When the insulating flange 100 is pressed up and down, the O-ring 106a is in close contact with the upper surface 21a of the mounting flange 21. At the same time, the O-ring 105a is in close contact with the lower surface 4c of the peripheral portion 4a of the cathode flange 4. Thereby, the processing chamber 3 can be sealed by the O-ring 105a and the O-ring 106a.

Furthermore, the gas inlet pipe 7 connected to the processing gas supply part 7b, or the circuit wiring connected to the high-frequency power supply 9 and the matching box 12, a shielding cover, and other necessary components are connected and installed.

This completes the preparation step for plasma treatment.

＜Plasma treatment steps＞ When starting the process, first, the vacuum pump 28 is driven to depressurize the vacuum chamber 2 . In this state, by depressurizing the vacuum chamber 2 , the insulating flange 100 is pressed up and down by the atmospheric pressure applied to the cathode flange 4 . When a predetermined pressing force is applied, the upper end surface 110 a of the insulating spacer 110 comes into contact with the lower surface 4 c of the peripheral portion 4 a of the cathode flange 4 . At the same time, the lower end surface 110b of the insulating spacer 110 is in contact with the upper surface 21a of the mounting flange 21.

The upper end surface 110a and the lower end surface 110b of the insulating spacer portion 110 are parallel to each other, and the plurality of insulating spacer portions 110 are rigid bodies with equal heights. Therefore, the distance between the upper surface 21 a of the mounting flange 21 and the lower surface 4 c of the peripheral portion 4 a of the cathode flange 4 is determined to be equal to the height of the insulating spacer 110 . Moreover, since the insulating spacer 110 is a rigid body, the distance between the upper end surface 110a and the lower end surface 110b is fixed and does not change during all processes from the beginning to the end of the plasma process.

Furthermore, the insulating spacer 110 is formed of aluminum oxide. Therefore, even if the heating is performed by the heater 14 and the like and by the plasma generated during the process, the upper surface 21 a of the mounting flange 21 and the lower surface 4 c of the peripheral portion 4 a of the cathode flange 4 are separated. The distance will not change either.

While the inside of the vacuum chamber 2 is maintained in a vacuum state, the gate valve 26 a is opened, and the substrate 10 is loaded into the film forming space 2 a from outside the vacuum chamber 2 through the unloading and loading part 26 of the vacuum chamber 2 . The substrate 10 is placed on the base 15 . The substrate 10 is formed by a substrate insulating cover or other components to define the placement position and alignment on the base 15 .

After the substrate 10 is loaded, the gate valve 26a is closed (closing operation). Before placing the substrate 10 , the base 15 is located below the vacuum chamber 2 . In addition, before the substrate 10 is placed, the base 15 is located below the unloading and loading part 26 . That is, since the distance between the base 15 and the shower plate 5 is widened, the substrate 10 can be easily placed on the base 15 using a robot arm (not shown).

After the substrate 10 is placed on the base 15, the lifting drive unit 16A is activated, and the support column 16 rises. The substrate 10 placed on the base 15 that is pushed upward also moves upward. Thereby, the distance between the shower plate 5 and the substrate 10 is determined to a desired value such that the distance required for proper film formation is achieved, and the distance is maintained. The base 15 on which the substrate 10 is mounted is heated by the heater 14 supplied with electric power from the power supply 14b via the heating wire 14a, thereby maintaining a predetermined temperature.

Thereafter, the processing gas is introduced into the space 2c from the processing gas supply part 7b via the gas introduction pipe 7 and the gas introduction port 7a. Furthermore, the processing gas is sprayed from the gas spray port 6 of the shower plate 5 into the film forming space 2a.

Next, the high-frequency power supply 9 is started to apply high-frequency power to the cathode flange 4 . In this way, high-frequency current flows from the surface of the cathode flange 4 to the surface of the shower plate 5 , and a discharge is generated between the shower plate 5 and the base 15 . And, plasma is generated between the shower plate 5 and the processing surface 10 a of the substrate 10 .

The processing gas is decomposed in the plasma thus generated to obtain the processing gas in a plasma state. A vapor deposition reaction occurs on the processing surface 10a of the substrate 10, and a thin film is formed on the processing surface 10a. The high-frequency current transmitted to the base 15 flows back along the side wall 24 and the shielding cover (return current).

In the plasma processing apparatus 1, before starting the film forming process, the separation distance between the cathode flange 4 and the mounting flange 21 is accurately set. Thereby, the base 15 is raised and lowered by the raising and lowering driving part 16A, and a gap (gap) serving as the film forming space 2a is set between the processing surface 10a of the substrate 10 on the base 15 and the lower surface of the shower plate 5 . At this time, the gap can be accurately controlled. At the same time, the gap between the processing surface 10a of the substrate 10 and the lower surface of the spray plate 5 can be accurately maintained.

Specifically, the entire upper end surface 110 a of the insulating spacer 110 is in close contact with the lower surface 4 c of the peripheral portion 4 a of the cathode flange 4 . At the same time, the entire lower end surface 110b of the insulating spacer 110 is in close contact with the upper surface 21a of the mounting flange 21. At this time, the entire upper end surface 110a of all insulating spacers 110 needs to be in close contact with the lower surface 4c. In addition, the entire lower end surface 110b of all insulating spacers 110 needs to be in close contact with the upper surface 21a.

Thereby, the gap between the lower surface 4c of the peripheral portion 4a of the cathode flange 4 and the upper surface 21a of the mounting flange 21 can be made uniform over the entire circumference of the mounting flange 21 forming the end opening of the chamber 2. Keep distance. The shower plate 5 is suspended parallel to the lower surface 4c of the cathode flange 4 by the insulating support part 8 and the support column part 4b. In addition, the upper surface of the base 15 is parallel to the upper surface 21a of the mounting flange 21. Therefore, the gap between the processing surface 10a of the substrate 10 and the lower surface of the shower plate 5 can be set to a uniform separation distance.

According to the plasma processing apparatus 1 of this embodiment, the mounting flange 21 and the cathode flange 4 can be insulated by the insulating flange 100 . Seal processing chamber 3. At the same time, in the insulating flange 100 that is pressed in the thickness direction by atmospheric pressure and the self-weight of the cathode flange 4 and the like, the upper end surface 110 a of the insulating spacer 110 is in contact with the cathode flange 4 . In addition, the lower end surface 110b of the insulating spacer 110 is in contact with the upper surface 21a of the mounting flange 21. In addition, the insulating spacer 110 has sufficient rigidity. Therefore, the separation distance between the mounting flange 21 and the cathode flange 4 can be maintained constant by the insulating spacer 110 . Therefore, the distance between the mounting flange 21 and the cathode flange 4 may not change during plasma processing. Furthermore, even when the base 15 is raised and lowered by the raising and lowering drive unit 16A, there is no need to provide any other complicated mechanism in order to make the distance between the electrodes that generate plasma uniform over the entire area along the processing surface 10 a of the substrate 10 .

Thereby, even when the flexible insulating flange 100 and the O-rings 105a and 106a are deformed to maintain the sealing state, the electrodes during plasma processing that are directly bonded to the processing characteristics (film-forming characteristics) can be accurately maintained. distance between. That is, the distance between the shower plate 5 and the substrate 10 can be accurately maintained. The influence of the deformation of the insulating flange 100 and the O-rings 105a and 106a on the plasma generation state can be suppressed. That is, by placing the insulating spacer 110 in the through hole 101, the insulating flange 100 can be suppressed from shrinking in the vertical direction. In other words, the insulating spacer 110 functions as a pillar between the mounting flange 21 and the cathode flange 4 . Therefore, the stability of the distance between the shower plate 5 and the substrate 10 can be improved.

In addition, in order to seal between the mounting flange and the electrode flange, sealing members such as the insulating flange 100 and O-rings 105a and 106a need to be deformed. While maintaining this sealing state, it is possible to prevent the distance between the mounting flange 21 and the cathode flange 4 from being uneven in the circumferential direction of the processing chamber 3 due to changes in the inclination of the cathode flange 4 relative to the mounting flange 21 .

In the plasma processing apparatus 1 of this embodiment, the columnar insulating spacer 110 is embedded in the through hole 101 formed in the insulating flange 100 . Therefore, the separation distance between the mounting flange 21 and the cathode flange 4 in the vertical direction can be maintained constant. A plurality of through holes 101 can be formed in the previous insulating flange 100 to install the insulating spacer 110 . Therefore, the distance between the plasma generating electrodes can be maintained without increasing other components. At the same time, the insulating spacer 110 can be inserted into the through hole 101 only, and the insulating spacer 110 can be assembled with the insulating flange 100 . Therefore, while suppressing an increase in the number of parts, the time required for disassembling and assembling the plasma processing apparatus 1 such as maintenance can be shortened. At the same time, the steps of disassembly and assembly of the plasma processing device 1 can be reduced.

According to the plasma processing apparatus 1 of this embodiment, the plurality of insulating spacers 110 are arranged along the periphery of the mounting flange 21 forming the end opening of the chamber 2 . Therefore, when the cathode flange 4 and the shower plate 5 are removed as one body, the vertical separation distance between the mounting flange 21 and the cathode flange 4 can be maintained constant throughout the entire circumference of the mounting flange 21 . That is, the shower plate 5 and the substrate 10 do not tilt. Also, it is easy to maintain the sealing of the cavity in the insulating flange. This can prevent deterioration in handling characteristics (film-forming characteristics).

According to the plasma processing apparatus 1 of this embodiment, the O-rings 105a and 106a functioning as a sealing mechanism are provided on the upper surface 100a and the lower surface 100b of the insulating flange 100. Therefore, the mounting flange 21 and the cathode flange 4 can be reliably insulated in the area near the insulating flange 100 . The space between the mounting flange 21 and the cathode flange 4 can be sealed by O-rings 105a and 106a.

Due to the atmospheric pressure and the self-weight of the cathode flange 4, the insulating flange 100 containing fluororesin is compressed and deformed in the direction acted by the atmospheric pressure and self-weight. Therefore, when the insulating spacer 110 is not provided, the distance between the shower plate 5 and the base 15 changes. This is a change in the distance between the electrodes in the treatment space, making it difficult to implement a plasma treatment step that maintains the reproducibility of film formation. On the other hand, in this embodiment, by providing the insulating spacer 110 between the cathode flange 4 and the mounting flange 21, shrinkage of the insulating flange 100 can be suppressed. The stability of the distance between the spray plate 5 and the substrate 10 on the base 15 is improved.

Here, the cathode flange 4 and the mounting flange 21 are electrically insulated by the insulating flange 100 . In addition, the insulating spacer 110, the position limiting convex portion 103a, and the fastening bolt 102a are all located outside the chamber 2 relative to the O-rings 105a and 106a, that is, on the atmospheric pressure side. The reason for adopting this structure is as follows. ・There is a risk that the gap between the alumina pillar and the insulating flange may cause abnormal discharge under reduced pressure. Taking this point into consideration, the above-described configuration is adopted. ・In order to avoid accumulation of particles on the 3rd side of the processing chamber (vacuum side), the above structure is arranged on the atmospheric side.

In addition, in the plasma processing apparatus 1, the substrate 10 is heated by the heater 14 during plasma processing. The shower plate 5, the insulating support part 8, the cathode flange 4, and the insulating flange 100 facing the base 15 are all heated in the same way. Here, since the temperatures of the shower plate 5, the insulating support part 8, the cathode flange 4, the mounting flange 21, and the insulating flange 100 are respectively different, the amounts of thermal expansion and contraction are different. In this regard, by providing an insulating spacer 110 between the cathode flange 4 and the mounting flange 21, the effect of buffering thermal expansion and contraction is obtained.

In addition, when the pressure in the chamber 2 is atmospheric, the O-rings 105a and 106a generate a repulsive force in the opposite direction to the pressing force of the cathode flange 4. Therefore, when the pressure received from the cathode flange 4 is less than the repulsive force of the O-rings 105a and 106a, the insulating spacer 110 is not in contact with the cathode flange 4 or the mounting flange 21. This can be eliminated by the fact that the force of the cathode flange pressing the O-rings 105a, 106a is stronger than the repulsive force of the O-rings 105a, 106a under the conditions during the processing.

FIG. 6 is a perspective view showing another example of the insulating spacer in this embodiment. FIG. 7 is a perspective view showing another example of the insulating spacer in this embodiment. In addition, in the above embodiment, the case where the outline shapes of the upper end surface 110 a and the lower end surface 110 b are circular has been described as the shape of the insulating spacer 110 . The shape of the insulating spacer 110 is not limited to the above embodiment. For example, as shown in FIG. 6 , the insulating spacer 110 may have a quadrangular prism outline. In this case, the cross-sectional shape of the through-hole 101 also has a rectangular outline cross-section. Furthermore, as shown in FIG. 7 , the insulating spacer 110 may also have an oblong outline. In this case, the cross-sectional shape of the through-hole 101 also has an oblong profile.

FIG. 8 is a perspective view showing another example of the insulating spacer according to this embodiment. In this embodiment, the case where the outline shapes of the upper end surface 110 a and the lower end surface 110 b of the insulating spacer 110 are the same has been explained. The radial size of the insulating spacer 110 may also vary in the up and down direction. For example, as shown in FIG. 8 , the insulating spacer 110 has an enlarged portion 110 c with an increased diameter on the upper side of the cylinder. That is, the insulating spacer portion 110 has an enlarged portion in which the size (dimension) of the insulating spacer portion 110 is increased. In other words, the insulating spacer 110 has an end portion in the extending direction of the insulating spacer 110 . The amplifying part 110c is provided at the end of the insulating spacer part 110. In this case, the cross-sectional shape of the through-hole 101 may be a cross-sectional shape of an enlarged hole (enlarged hole) having an increased size in the radial direction according to the shape of the enlarged portion 110c. In this case, the insulating spacer 110 is difficult to pull out from the through hole 101 . Therefore, before placing the insulating flange 100 on the mounting flange 21 , the insulating spacer 110 can be inserted into the through hole 101 , thereby improving the assembly efficiency of the plasma processing device 1 .

FIG. 9 is a perspective view showing another example of the insulating spacer in this embodiment. Similarly, as shown in FIG. 9 , the insulating spacer part 110 has an enlarged part 110c provided on the upper part of the square prism. In a plane orthogonal to the extending direction of the insulating spacer 110 , the enlarged portion 110 c has a size larger than other parts of the insulating spacer 110 . In this case, the shape of the through hole 101 may have a shape corresponding to the shape of the enlargement part 110c. For example, the cross-sectional shape of the through-hole 101 may be a cross-sectional shape having a larger diameter enlarged hole (enlarged hole) in a plane orthogonal to the extending direction of the insulating spacer 110 . FIG. 10 is a perspective view showing another example of the insulating spacer according to this embodiment. Similarly, as shown in FIG. 10 , the insulating spacer 110 has an enlarged portion 110 c that enlarges the diameter of the upper part of the elongated cylinder. In other words, the insulating spacer portion 110 has an enlarged portion 110c that increases in size on the upper portion of the elongated cylinder. In this case, the cross-sectional shape of the through-hole 101 may be a cross-sectional shape of an enlarged hole (enlarged hole) having an increased size in the radial direction according to the shape of the enlarged portion 110c.

Furthermore, in this embodiment, the through hole 101 is formed as a gap formed between the insulating flange 100 and the insulating partition portion 110 . The through hole 101 may also be a notch. For example, such a gap penetrates the insulating flange 100 in the thickness direction, and is also opened at the periphery of the insulating flange 100 .

<Second Embodiment> Hereinafter, a plasma processing apparatus according to a second embodiment of the present invention will be described based on the drawings. FIG. 11 is a schematic diagram showing the insulating spacer part of this embodiment. This embodiment is different from the above-mentioned first embodiment in respect of the insulating partition portion and the mounting flange. As for other configurations, the same reference numerals are assigned to the configurations corresponding to those in the first embodiment and description thereof will be omitted.

As shown in FIG. 11 , the insulating spacer 110 of this embodiment has a protruding portion 110 d formed to protrude downward in the thickness direction of the insulating flange 100 . On the other hand, a recess 21d is formed on the upper surface 21a of the mounting flange 21. In the example shown in FIG. 11 , the recessed portion 21d has a shape corresponding to the protruding portion 110d. The protruding part 110d is accommodated in the recessed part 21d. In other words, the insulating spacer 110 has the protruding portion 110d extending in the extending direction of the insulating spacer 110 .

Thereby, the insulating flange 100 can be prevented from moving relative to the mounting flange 21 along the upper surface 21a. This eliminates the need to form the position limiting convex portion 103 a on the mounting flange 21 . At the same time, there is no need to form the position limiting recess 103 in the insulating flange 100 . Furthermore, in this state, the insulating flange 100 can be prevented from moving along the upper surface 21a. Therefore, the number of parts can be reduced. In addition, the number of processing steps for the mounting flange 21, the insulating flange 100, etc. can be reduced. At the same time, the requirement for excessive processing accuracy can be reduced.

In addition, the protruding part 110d may have a position restricting mechanism fitted into the recessed part 21d.

FIG. 12 is a perspective view showing another example of the insulating spacer according to this embodiment. As shown in FIG. 12 , an external thread portion may be formed on the protruding portion 110d. In this case, an internal thread portion is formed in the recessed portion 21d corresponding to the protruding portion 110d. According to this configuration, the insulating spacer 110 can be screwed to the mounting flange 21 . In this case, assembly workability can be further improved. In addition, in FIG. 12 , the protruding portion 110 d formed with the external thread portion is shown, but the protruding portion 110 d formed with the external thread portion may also be configured to fit into the recessed portion 21 d without forming the external thread portion.

FIG. 13 is a perspective view showing another example of the insulating spacer according to this embodiment. In addition, in the above-mentioned embodiment, the case where the outline shapes of the upper end surface 110a and the lower end surface 110b are circular is explained as the shape of the insulating spacer part 110. The shape of the insulating spacer 110 is not limited to the above embodiment. For example, as shown in FIG. 13 , the insulating spacer 110 may also have a quadrangular prism outline. In this case, the protruding portion 110d has a circular cross-section so that it can be fitted or screwed into the recessed portion 21d. In other words, in the example shown in FIG. 13 , the protruding portion 110d has a cylindrical portion different from a square prism. An external thread is formed on the cylindrical part.

FIG. 14 is a perspective view showing another example of the insulating spacer according to this embodiment. As shown in FIG. 14 , the insulating spacer 110 has an enlarged portion 110 c whose diameter is enlarged toward the opposite side of the protruding portion 110 d. In other words, the insulating spacer 110 has an enlarged portion 110c with an increased size of the insulating spacer 110 on the opposite side of the protruding portion 110d. In this case, the enlargement part 110c can also be used like a bolt head.

FIG. 15 is a perspective view showing another example of the insulating spacer according to this embodiment. As shown in FIG. 15 , the insulating spacer 110 has an enlarged portion 110 c whose diameter is enlarged toward the opposite side of the protruding portion 110 d. The amplifying part 110c is provided on the upper part of the protruding part 110d of the square prism. In a plane orthogonal to the extending direction of the insulating spacer 110 , the enlarged portion 110 c has a size larger than other parts of the insulating spacer 110 . In this case, the enlargement part 110c can also be used like a bolt head. In this case, the protruding portion 110d has a circular cross-section so that it can be fitted or screwed into the recessed portion 21d. In other words, in the example shown in FIG. 15 , the protruding portion 110d has a cylindrical portion different from a square prism. An external thread is formed on the cylindrical part.

In this embodiment, the same effects as those of the above-mentioned embodiment can be achieved. Furthermore, the insulating flange 100 can be mounted on the mounting flange 21 or the cathode flange 4 . When the insulating flange 100 is separated from the mounting flange 21 during maintenance, the shape of the insulating flange 100 can be maintained. This can have the effect of improving maintainability.

<Third Embodiment> Hereinafter, a plasma processing apparatus according to a third embodiment of the present invention will be described based on the drawings. FIG. 16 is a schematic diagram showing the insulating spacer part of this embodiment. This embodiment is different from the above-mentioned first and second embodiments in respect of the insulating partition portion and the mounting flange. As for other configurations, the same reference numerals are assigned to the configurations corresponding to those in the above-described first and second embodiments, and description thereof will be omitted.

As shown in FIG. 16 , the insulating spacer 110 of this embodiment has a protruding portion 110 e formed to protrude upward in the thickness direction of the insulating flange 100 . On the other hand, a recess 4d is formed on the lower surface 4c of the cathode flange 4. In the example shown in FIG. 16 , the recessed portion 4d has a shape corresponding to the protruding portion 110e. The protruding part 110e is accommodated in the recessed part 4d.

Thereby, the insulating flange 100 can be prevented from moving relative to the cathode flange 4 along the lower surface 4c. This eliminates the need to form the position limiting convex portion 103 a on the mounting flange 21 . At the same time, there is no need to form the position limiting recess 103 in the insulating flange 100 . Furthermore, in this state, the insulating flange 100 can be prevented from moving along the upper surface 21a. Therefore, the number of parts can be reduced. In addition, the number of processing steps for the mounting flange 21, the insulating flange 100, etc. can be reduced. At the same time, the requirement for excessive processing accuracy can be reduced.

In addition, the protruding part 110e may be fitted into the recessed part 4d and have a position limiting mechanism.

In this embodiment, the same effects as those of the above-mentioned embodiment can be achieved.

<Fourth Embodiment> Hereinafter, a plasma processing apparatus according to a fourth embodiment of the present invention will be described based on the drawings. FIG. 17 is a schematic diagram showing the insulating spacer part of this embodiment. This embodiment is different from the above-mentioned first to third embodiments in respect of the insulating partition portion and the mounting flange. Regarding other configurations, the same reference numerals are assigned to the configurations corresponding to those in the first to third embodiments described above, and descriptions thereof will be omitted.

As shown in FIG. 17 , the insulating spacer 110 of this embodiment has a protruding portion 110d and a protruding portion 110e. The protruding portion 110 d is a portion formed to protrude downward in the thickness direction of the insulating flange 100 . The protruding portion 110 e is a portion formed to protrude upward in the thickness direction of the cathode flange 4 . The protruding portion 110d is received in the recessed portion 21d formed on the upper surface 21a of the mounting flange 21. At the same time, the protruding portion 110e is received in the recessed portion 4d formed on the lower surface 4c of the cathode flange 4.

Thereby, the insulating flange 100 can be prevented from moving relative to the cathode flange 4 along the upper surface 21 a and the lower surface 4 c. Furthermore, there is no need to form the position limiting convex portion 103 a on the mounting flange 21 . At the same time, there is no need to form the position limiting recess 103 in the insulating flange 100 . Furthermore, in this state, the insulating flange 100 can be prevented from moving along the upper surface 21a and the lower surface 4c. Therefore, the number of parts can be reduced. In addition, the number of processing steps for the mounting flange 21, the insulating flange 100, etc. can be reduced. At the same time, the requirement for excessive processing accuracy can be reduced.

In addition, the protruding portion 110d and the protruding portion 110e may have a position limiting mechanism fitted into the recessed portions 21d and 4d.

In this embodiment, the same effects as those of the above-mentioned embodiment can be achieved.

<Fifth Embodiment> Hereinafter, a plasma processing apparatus according to a fifth embodiment of the present invention will be described based on the drawings. FIG. 18 is a schematic diagram showing the area near the insulating flange and the insulating spacer in this embodiment. This embodiment is different from the above-mentioned first to fourth embodiments in respect of the insulating partition portion and the mounting flange. For other configurations, the same reference numerals are assigned to the configurations corresponding to those in the first to fourth embodiments, and description thereof will be omitted.

In the insulating flange 100 of this embodiment, as shown in FIG. 18 , the O-ring groove 105 and the O-ring 105 a on the upper surface 100 a of the insulating flange 100 are arranged on the atmospheric side with respect to the insulating spacer 110 . That is, the O-ring groove 105 and the O-ring 105 a are arranged at a position farther outward than the insulating partition 110 with respect to the processing chamber 3 . Similarly, the O-ring groove 106 and the O-ring 106a on the lower surface 100b of the insulating flange 100 are arranged on the atmosphere side relative to the insulating spacer 110. That is, the O-ring groove 106 and the O-ring 106 a are arranged at a position farther outward than the insulating partition 110 with respect to the processing chamber 3 .

In this embodiment, the same effects as those of the above-mentioned embodiment can be achieved.

<Sixth Embodiment> Hereinafter, a plasma processing apparatus according to a sixth embodiment of the present invention will be described based on the drawings. FIG. 19 is a schematic diagram showing the area near the insulating flange and the insulating spacer in this embodiment. This embodiment is different from the above-mentioned first to fifth embodiments in respect of the insulating flange and the O-ring. As for other configurations, the same reference numerals are assigned to the configurations corresponding to those in the above-described first to fifth embodiments, and description thereof will be omitted.

In this embodiment, as shown in FIG. 19 , the insulating flange 100 is not provided. Only the insulating spacer 110 and the O-ring 105c are arranged between the lower surface 4c of the peripheral portion 4a of the cathode flange 4 and the upper surface 21a of the mounting flange 21.

In this embodiment, the cathode flange 4 and the mounting flange 21 are electrically insulated by the insulating spacer 110 and the O-ring 105c. O-ring 105c can seal between cathode flange 4 and mounting flange 21.

In this embodiment, the same effects as those of the above-mentioned embodiment can be achieved.

<Seventh Embodiment> Hereinafter, a plasma processing apparatus according to a seventh embodiment of the present invention will be described based on the drawings. FIG. 20 is a plan view showing the area near the insulating flange and the insulating spacer of this embodiment. This embodiment is different from the above-described first to sixth embodiments in the outline shape of the insulating flange. As for other configurations, the same reference numerals are assigned to the configurations corresponding to those in the above-described first to sixth embodiments, and description thereof will be omitted.

In this embodiment, as shown in FIG. 20 , the outline shape of the insulating flange 100 is circular. Similarly, although not shown in the figure, the outline shape of the mounting flange 21 is also circular. Thereby, in the plasma processing device corresponding to the circular substrate 10, the accuracy of sealing, insulation, and distance between electrodes for plasma generation can be maintained. It can improve workability.

In this embodiment, the same effects as those of the above-mentioned embodiment can be achieved.

In addition, in each of the above-described embodiments, each configuration may be appropriately selected and combined. Furthermore, in the embodiment disclosed in this specification, the plurality of elements may be integrated, and conversely, the elements consisting of one element may be divided into a plurality of elements. It does not matter whether it is integrated or not, as long as it is configured to achieve the purpose of the invention. [Industrial availability]

Examples of applications of the present invention include applications to plasma etching equipment, plasma ALD (Atomic Layer Deposition) equipment, and plasma ashing equipment.

1: Plasma treatment device 2: Vacuum chamber (chamber) 2a: Film forming space (reaction chamber) 2c: space 3: Processing room 4: Cathode flange (electrode flange) 4a: Peripheral part 4b: Support column 4c: Lower surface 4d: concave part 5:Spray plate 6: Gas outlet 7:Gas introduction pipe 7a:Gas inlet 7b: Process gas supply department 8: Insulation support department 9: High frequency power supply 10:Substrate 10a: Processing surface 11: Bottom 12: Matching box 14:Heater 14a:Heating wire 14b:Power supply 15: Base (support part) 16:Pillar 16A:Lifting drive part 21: Installation flange 21a: Upper surface 21d: concave part 24:Side wall 26: Moving out and moving in department 26a:gate valve 27:Exhaust pipe 28: Vacuum pump 100: Insulating flange 100a: Upper surface 100b: Lower surface 101: Through hole (gap) 102: Fixed through hole 102a: Fastening bolts 102b: Insulating bushing 102c: Fastening hole 102d: Internal thread part 103: Position limit recess 103a: Position limiting convex part 103b: Internal thread recess 103c:Position limiting bolt 105:O-ring groove 105a: O-ring (sealed mechanism) 105c:O-ring 106:O-ring groove 106a: O-ring (sealed mechanism) 110: Insulation spacer 110a: Upper end surface 110b: Lower end surface 110c: Amplification part 110d:Protrusion 110e:Protrusion

FIG. 1 is a schematic longitudinal cross-sectional view showing the plasma processing apparatus according to the first embodiment of the present invention. FIG. 2 is an enlarged cross-sectional view showing a region near an insulating flange of the plasma processing apparatus according to the first embodiment of the present invention. FIG. 3 is a perspective view showing the insulating flange and the insulating spacer of the plasma processing device according to the first embodiment of the present invention. FIG. 4 is a perspective view showing the insulating flange and sealing mechanism of the plasma processing device according to the first embodiment of the present invention. FIG. 5 is a perspective view showing an insulating partition portion of the plasma processing apparatus according to the first embodiment of the present invention. FIG. 6 is a perspective view showing another example of the insulating partition portion of the plasma processing apparatus according to the first embodiment of the present invention. 7 is a perspective view showing another example of the insulating partition portion of the plasma processing apparatus according to the first embodiment of the present invention. 8 is a perspective view showing another example of the insulating partition portion of the plasma processing apparatus according to the first embodiment of the present invention. FIG. 9 is a perspective view showing another example of the insulating partition portion of the plasma processing apparatus according to the first embodiment of the present invention. FIG. 10 is a perspective view showing another example of the insulating partition portion of the plasma processing apparatus according to the first embodiment of the present invention. FIG. 11 is a schematic diagram showing the area near the insulating flange and the insulating spacer of the plasma processing apparatus according to the second embodiment of the present invention. FIG. 12 is a perspective view showing the insulating partition portion of the plasma processing apparatus according to the second embodiment of the present invention. FIG. 13 is a perspective view showing another example of the insulating partition portion of the plasma processing apparatus according to the second embodiment of the present invention. FIG. 14 is a perspective view showing another example of the insulating partition portion of the plasma processing apparatus according to the second embodiment of the present invention. FIG. 15 is a perspective view showing another example of the insulating partition portion of the plasma processing apparatus according to the second embodiment of the present invention. FIG. 16 is a schematic diagram showing the area near the insulating flange and the insulating spacer of the plasma processing apparatus according to the third embodiment of the present invention. FIG. 17 is a schematic diagram showing the area near the insulating flange and the insulating spacer of the plasma processing apparatus according to the fourth embodiment of the present invention. FIG. 18 is a schematic diagram showing the area near the insulating flange and the insulating spacer of the plasma processing apparatus according to the fifth embodiment of the present invention. FIG. 19 is a schematic diagram showing the area near the insulating flange and the insulating spacer of the plasma processing apparatus according to the sixth embodiment of the present invention. FIG. 20 is a schematic diagram showing the area near the insulating flange and the insulating spacer of the plasma processing apparatus according to the seventh embodiment of the present invention.

1: Plasma treatment device 2: Vacuum chamber (chamber) 2a: Film forming space (reaction chamber) 2c: space 3: Processing room 4: Cathode flange (electrode flange) 4a: Peripheral part 4b: Support column 4c: Lower surface 5:Spray plate 6: Gas outlet 7:Gas introduction pipe 7a:Gas inlet 7b: Process gas supply department 8: Insulation support department 9: High frequency power supply 10:Substrate 10a: Processing surface 11: Bottom 12: Matching box 14:Heater 14a:Heating wire 14b:Power supply 15: Base (support part) 16:Pillar 16A:Lifting drive part 21: Installation flange 21a: Upper surface 24:Side wall 26: Moving out and moving in department 26a:gate valve 27:Exhaust pipe 28: Vacuum pump 100: Insulating flange 105a: O-ring (sealed mechanism) 106a: O-ring (sealed mechanism) 110: Insulation spacer

Claims (6)

A plasma treatment device having: electrode flange; A chamber having a bottom, a side wall with an end forming an end opening, and a mounting flange provided on the end and insulated from the electrode flange; An insulating flange arranged between the above-mentioned mounting flange and the above-mentioned electrode flange; A processing chamber, which is composed of the above-mentioned chamber, the above-mentioned electrode flange and the above-mentioned insulating flange, and has a reaction chamber; A support part, which is stored in the reaction chamber, holds a substrate with a processing surface, and can control the temperature of the substrate; A high-frequency power supply, which is connected to the above-mentioned electrode flange and applies a high-frequency voltage to the above-mentioned electrode flange; and an insulating spacer arranged between the above-mentioned mounting flange and the above-mentioned electrode flange with a prescribed separation distance; and The insulating spacer is embedded in the insulating flange. The plasma processing device of claim 1, wherein The insulating spacer has a columnar shape and is embedded in a gap formed in the insulating flange. The plasma processing device of claim 2, wherein A plurality of the above-mentioned insulating spacers are provided, each of which is the same as the above-mentioned insulating spacer, and The plurality of insulating spacers are spaced apart along the periphery of the insulating flange. The plasma processing device according to any one of claims 1 to 3, wherein The above-mentioned insulating spacer part has a protruding part extending in the extending direction of the above-mentioned insulating spacer part, Either one of the mounting flange and the electrode flange has a recess, and The protruding portion is accommodated in the recessed portion in a manner corresponding to the recessed portion. The plasma processing device of claim 1, wherein The above-mentioned insulating spacer has an end portion in the extending direction of the above-mentioned insulating spacer, The above-mentioned insulating spacer part has an amplification part in which the size of the above-mentioned insulating spacer part is increased, The amplification part is provided at the end part. The plasma treatment device according to any one of claims 1 to 3, which has: A sealing mechanism is arranged along the periphery of the insulating flange and is radially spaced apart from the insulating spacer.