KR101737016B1 - System and method for correcting photomask - Google Patents
System and method for correcting photomask Download PDFInfo
- Publication number
- KR101737016B1 KR101737016B1 KR1020150148822A KR20150148822A KR101737016B1 KR 101737016 B1 KR101737016 B1 KR 101737016B1 KR 1020150148822 A KR1020150148822 A KR 1020150148822A KR 20150148822 A KR20150148822 A KR 20150148822A KR 101737016 B1 KR101737016 B1 KR 101737016B1
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- Prior art keywords
- gas
- photomask
- laser beam
- chamber
- repaired
- Prior art date
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- 238000000034 method Methods 0.000 title claims abstract description 39
- 238000005530 etching Methods 0.000 claims abstract description 44
- 238000002161 passivation Methods 0.000 claims abstract description 28
- 230000001678 irradiating effect Effects 0.000 claims abstract description 9
- 238000010494 dissociation reaction Methods 0.000 claims abstract description 8
- 230000005593 dissociations Effects 0.000 claims abstract description 8
- 239000007789 gas Substances 0.000 claims description 154
- 239000000460 chlorine Substances 0.000 claims description 33
- 229910052801 chlorine Inorganic materials 0.000 claims description 16
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 claims description 14
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims description 12
- 229910052731 fluorine Inorganic materials 0.000 claims description 12
- 239000011737 fluorine Substances 0.000 claims description 10
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 6
- 229910052786 argon Inorganic materials 0.000 claims description 6
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 6
- 239000001301 oxygen Substances 0.000 claims description 6
- 229910052760 oxygen Inorganic materials 0.000 claims description 6
- PXGOKWXKJXAPGV-UHFFFAOYSA-N Fluorine Chemical compound FF PXGOKWXKJXAPGV-UHFFFAOYSA-N 0.000 claims 3
- 239000002052 molecular layer Substances 0.000 claims 2
- 239000004065 semiconductor Substances 0.000 abstract description 3
- 235000012431 wafers Nutrition 0.000 description 8
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 7
- 125000004429 atom Chemical group 0.000 description 7
- 229910052794 bromium Inorganic materials 0.000 description 5
- 238000010894 electron beam technology Methods 0.000 description 5
- 229910052736 halogen Inorganic materials 0.000 description 5
- 239000002356 single layer Substances 0.000 description 4
- WKBOTKDWSSQWDR-UHFFFAOYSA-N Bromine atom Chemical compound [Br] WKBOTKDWSSQWDR-UHFFFAOYSA-N 0.000 description 3
- GDTBXPJZTBHREO-UHFFFAOYSA-N bromine Substances BrBr GDTBXPJZTBHREO-UHFFFAOYSA-N 0.000 description 3
- 150000002367 halogens Chemical class 0.000 description 3
- OCVXZQOKBHXGRU-UHFFFAOYSA-N iodine(1+) Chemical compound [I+] OCVXZQOKBHXGRU-UHFFFAOYSA-N 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 230000007547 defect Effects 0.000 description 2
- 125000005843 halogen group Chemical group 0.000 description 2
- -1 halogen ions Chemical class 0.000 description 2
- 229910052740 iodine Inorganic materials 0.000 description 2
- 150000002500 ions Chemical class 0.000 description 2
- 230000002093 peripheral effect Effects 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- 230000008030 elimination Effects 0.000 description 1
- 238000003379 elimination reaction Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 238000010884 ion-beam technique Methods 0.000 description 1
- 238000001459 lithography Methods 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 230000007261 regionalization Effects 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
Images
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
- G03F1/72—Repair or correction of mask defects
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
- G03F1/80—Etching
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/20—Exposure; Apparatus therefor
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/20—Exposure; Apparatus therefor
- G03F7/2051—Exposure without an original mask, e.g. using a programmed deflection of a point source, by scanning, by drawing with a light beam, using an addressed light or corpuscular source
- G03F7/2053—Exposure without an original mask, e.g. using a programmed deflection of a point source, by scanning, by drawing with a light beam, using an addressed light or corpuscular source using a laser
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
- H01L21/033—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
- H01L21/033—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers
- H01L21/0334—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers characterised by their size, orientation, disposition, behaviour, shape, in horizontal or vertical plane
- H01L21/0337—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers characterised by their size, orientation, disposition, behaviour, shape, in horizontal or vertical plane characterised by the process involved to create the mask, e.g. lift-off masks, sidewalls, or to modify the mask, e.g. pre-treatment, post-treatment
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
- H01L21/268—Bombardment with radiation with high-energy radiation using electromagnetic radiation, e.g. laser radiation
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- High Energy & Nuclear Physics (AREA)
- Power Engineering (AREA)
- Optics & Photonics (AREA)
- Electromagnetism (AREA)
- Inorganic Chemistry (AREA)
- Chemical & Material Sciences (AREA)
- Health & Medical Sciences (AREA)
- Toxicology (AREA)
- Drying Of Semiconductors (AREA)
- Preparing Plates And Mask In Photomechanical Process (AREA)
Abstract
An embodiment of the present invention provides a photomask repair system and a repair method for repairing a photomask through dissociation of gas through a laser beam when repair of a photomask used in a semiconductor process is required. The disclosed photomask repair system includes a chamber in which a photomask to be repaired is provided; A vacuum device for maintaining the inside of the chamber under vacuum; A gas supply device for supplying an etching gas and a passivation gas into the chamber; And a laser irradiating device for irradiating a portion of the photomask to be repaired within the chamber with a laser beam to dissociate the etching gas in the chamber, wherein the passivation gas is adsorbed on the portion to be repaired, The portions are etched uniformly.
Description
The present invention relates to a photomask repair system and a repair method for repairing a portion to be repaired through a dissociation of a gas through a laser beam.
A photomask is a high precision plate used to form an integrated circuit on a wafer. Such a photomask is composed of a transparent substrate and a light-shielding pattern formed on one surface of the transparent substrate. The light-shielding pattern of the photomask defines the circuit pattern on the wafer through the exposure process. Theoretically, the critical dimension (CD) of the light-shielding pattern of the photomask and the CD of the corresponding circuit pattern formed on the wafer must correspond exactly. Here, the matching of the CD may mean that it corresponds at the same magnification, or it may mean that it corresponds at a different magnification. However, the CD of the light-shielding pattern of the photomask and the CD of the circuit pattern on the wafer may be different from each other due to a defect in an exposure apparatus such as a defective spatial distribution of a light source, a defect in a lens, and an error in a light-shielding pattern itself of a photomask. Recently, as the pattern becomes finer, the importance of improving CD scattering on wafers in a hot-spot region where the patterning margin is weak is increasing.
An embodiment of the present invention provides a photomask repair system and a repair method for repairing a photomask through dissociation of gas through a laser beam when repair of a photomask used in a semiconductor process is required.
A photomask repair system according to an embodiment of the present invention includes a chamber in which a photomask to be repaired is provided; A vacuum device for maintaining the inside of the chamber under vacuum; A gas supply device for supplying an etching gas and a passivation gas into the chamber; And a laser irradiating device for irradiating a portion of the photomask to be repaired within the chamber with a laser beam to dissociate the etching gas in the chamber, wherein the passivation gas is adsorbed on the portion to be repaired, The portions are etched uniformly.
The etching gas may include at least one of a fluorine (F) -containing gas and a chlorine (Cl) -containing gas.
The passivation gas may include at least one of an oxygen (O 2 ) -containing gas, an argon (Ar) -containing gas, and a nitrogen (N 2 ) -containing gas.
The laser beam may include a beam in the form of a top-hat.
The chamber may include a window through which the laser beam can pass.
The vacuum apparatus can maintain the inside of the chamber at a pressure of 10 -4 Torr to 10 -7 Torr.
The gas supply device may include a nozzle for injecting the gas into the chamber.
The laser irradiation apparatus can irradiate a laser beam having a wavelength of 248 nm to 355 nm.
The laser irradiation apparatus can irradiate a laser beam having a frequency of 10 kHz to 50 kHz.
The laser irradiation apparatus was operated at 10 mJ / cm < 2 > ~ 20 mJ / cm 2 A laser beam having an energy density can be irradiated.
The gas supply device may include a mass flow controller (MFC).
A method of repairing a photomask according to an embodiment of the present invention includes: providing a photomask in a chamber and then maintaining a vacuum inside the chamber; Injecting etch gas and passivation gas into the chamber; Irradiating a portion of the photomask to be repaired with a laser beam to dissociate the etching gas; Attaching atoms generated by dissociation of the etching gas to a portion of the photomask to be repaired; And a part of the photomask to be repaired is dropped together with the atoms, wherein the passivation gas is adsorbed on the portion to be repaired, thereby uniformly etching the repaired portion.
The etch gas includes at least one of a fluorine (F) -containing gas and a chlorine (Cl) -containing gas, and the atoms disassociated by irradiation with the laser beam and attached to a portion to be repaired in the photomask are fluorine (F) Atoms and chlorine (Cl) atoms.
The passivation gas may include at least one of an oxygen (O 2 ) -containing gas, an argon (Ar) -containing gas, and a nitrogen (N 2 ) -containing gas.
The laser beam may include a beam in the form of a top-hat.
The interior of the chamber may be maintained at a pressure of 10 -4 Torr to 10 -7 Torr before the etch gas and the passivation gas are injected.
The wavelength of the laser beam irradiated on the photomask may be between 248 nm and 355 nm.
The frequency of the laser beam irradiated on the photomask may be 10 kHz to 50 kHz.
The energy density of the laser beam irradiated on the photomask may be 10 mJ / cm 2 to 20 mJ / cm 2 .
The etching gas and the passivation gas may be injected into the chamber by a nozzle.
According to the embodiment of the present invention, as the degree of integration of a semiconductor circuit increases, a photomask in which errors occur in a photomask lithography process can be corrected at a level of several nm or less. Also, by using a photomask whose CD is corrected to a level of several nanometers or less for pattern formation on the wafer, the CD of the pattern on the wafer can be corrected at a level of several nm or less, for example, 1 nm.
Further, according to the embodiment of the present invention, the photomask can be uniformly etched by using the mixed gas of the etching gas and the passivation gas.
Also, according to the embodiment of the present invention, it is possible to precisely etch only a predetermined area to be repaired by using a laser beam in a top-hat shape.
1 schematically depicts a photomask repair system in accordance with an embodiment of the present invention.
2A and 2B show a laser beam in a Gaussian form and a laser beam in a top-hat form.
3A to 3D illustrate a process of repairing a CD of a pattern of a photomask according to an embodiment of the present invention.
4A to 4D illustrate a process of removing a bridge of a photomask according to an embodiment of the present invention.
Hereinafter, preferred embodiments of the present invention will be described in detail with reference to the accompanying drawings. The embodiments of the present invention are described in order to more fully explain the present invention to those skilled in the art, and the following embodiments may be modified into various other forms, It is not limited to the embodiment. Rather, these embodiments are provided so that this disclosure will be more thorough and complete, and will fully convey the concept of the invention to those skilled in the art.
In the following description, when an element is described as being connected to another element, it may be directly connected to another element, but a third element may be interposed therebetween. Similarly, when an element is described as being on top of another element, it may be directly on top of the other element, and a third element may be interposed therebetween. In addition, the structure and size of each constituent element in the drawings are exaggerated for convenience and clarity of description, and a part which is not related to the explanation is omitted. Wherein like reference numerals refer to like elements throughout. It is to be understood that the terminology used is for the purpose of describing the present invention only and is not used to limit the scope of the present invention.
1 schematically depicts a photomask repair system in accordance with an embodiment of the present invention.
1, a
A photomask M to be repaired is provided in the
The
The
The
The
The
The laser beam irradiated by the laser irradiating
The
2A and 2B show a laser beam in a Gaussian form and a laser beam in a top-hat form.
FIG. 2A shows a laser beam in a ghost form. Referring to FIG. 2A, it can be seen that the intensity of the laser beam in the Gaussian form is largest in the center portion, and decreases in intensity toward the edge. Therefore, the Gaussian laser beam has a disadvantage that it is difficult to irradiate the laser beam of uniform intensity to the irradiation region.
On the other hand, FIG. 2B shows a top-hat type laser beam. Referring to FIG. 2B, it can be seen that the intensity of the top-hat type laser beam is constant compared to the Gaussian type laser beam shown in FIG. 2A. Thus, the laser beam of the top-hat type can be irradiated with the laser beam of uniform intensity over the irradiation region. Since the intensity of the laser beam is weak outside the irradiation region, unintentional etching of the photomask M due to the dissociation of the etching gas in the non-irradiation region can be prevented.
3A to 3D illustrate a process of repairing a CD of a pattern of a photomask according to an embodiment of the present invention.
Referring to FIG. 3A, the patterns in the photomask M1 may be formed at predetermined intervals. The width of one of the plurality of patterns may be D1 and the CD between the patterns may become poor if the D1 value has an error with the width of the pattern to be formed. On the other hand, the error thickness may be very small to a few nm or less, and in such a case where the error is too small, it may be inappropriate or impossible to apply a direct removal method using an electron beam. This is because, if a direct elimination method using an electron beam is applied, there is a possibility that the peripheral region which does not desire to be repaired is also removed, and there is a possibility that the entire photomask is twisted due to the generated heat. Accordingly, in the photomask repair method of this embodiment, the CD of the photomask can be indirectly corrected as described with reference to FIGS. 3B to 3D.
Referring to FIG. 3B, the photomask M1 is placed in the
The injected etching gas may be in an inactive state, diffused and diffused on the surface of the photomask M1 to be adsorbed in a mono-layer form. The etching gas adsorbed in a mono-layer form is inert and does not react with the photomask M1.
Further, the injected passivation gas may be diffused and adsorbed on the surface of the photomask M1. The passivation gas can etch the photomask uniformly at the same depth when the etching gas etches the photomask.
The etching gas and the passivation gas may be injected into the
Referring to FIGS. 3C and 3D, the laser beam L1 generated from the
Here, the laser beam L1 can use the top-hat type beam shown in Fig. 2B. When a top-hat beam is used, the laser beam L1 can be irradiated only to the portion to be repaired of the photomask M1. Since the intensity of the laser beam outside the irradiation region is weak, The etching of the photomask (M1) pattern due to the dissociation of the etching gas may not occur.
When the laser beam L 1 is irradiated, the etching gas adsorbed in the irradiated region is dissociated by the laser beam L 1 to become an active state, whereby atoms or ions can be generated. The etching gas, for example, halogen atoms (F, Cl, Br, I) or halogen ions (F - , Cl - , Br - , I - ) which has been changed into an active state reacts with the photomask M 1 and is converted into a volatile gas The photomask can be etched to a predetermined thickness D2 and removed.
In this case, the passivation gas is also adsorbed in the region irradiated with the laser beam L 1, and the passivation gas can act to suppress the reaction of the etch gas, which has become active, with the photomask M 1. This makes it possible to prevent excessive etching of the portion of the photomask M1 that is to be repaired by the etched gas that has been changed to the active state, The portion can be etched to a uniform depth.
4A to 4D illustrate a process of removing a bridge of a photomask according to an embodiment of the present invention.
Referring to FIG. 4A, a plurality of patterns may be formed on the photomask M2 at predetermined intervals. There may be a bridge B as shown between the above patterns. The presence of the bridge B may cause unnecessary light shielding during the exposure process, which may cause a failure in the circuit pattern on the wafer. On the other hand, the width and thickness of the bridge (B) may be as small as a few nm or less, and when the width and the thickness are too small, it may be inappropriate or impossible to apply a direct removal method using an electron beam. This is because not only the bridge B but also the peripheral area thereof may be removed together with the direct removal method using the electron beam, and there is a possibility that the entire photomask is twisted due to the generated heat. Accordingly, in the photomask repair method of this embodiment, the bridge B generated in the photomask can be corrected indirectly as described in FIGS. 4B to 4D.
Referring to FIG. 4B, the photomask M2 is placed in a
The injected inert etching gas is diffused and diffused on the surface of the photomask M2 to be adsorbed in a mono-layer form. The etching gas adsorbed in a mono-layer form is inactive and does not react with the photomask M2. In addition, the gas G may be injected into the
Referring to FIGS. 4C and 4D, the laser beam L2 generated from the
Here, the laser beam L2 can use the top-hat type beam shown in Fig. 2B. When a top-hat beam is used, the laser beam L2 can be irradiated only to the part to be repaired of the photomask M2, that is, the bridge B, and the intensity of the laser beam The etching of the photomask (M2) pattern due to the dissociation of the etching gas may not occur at the portion other than the irradiation region.
When the laser beam L2 is irradiated, the etching gas adsorbed in the irradiated region is dissociated by the laser beam L2 to become an active state, whereby atoms or ions can be generated. The etch gas, such as halogen atoms (F, Cl, Br, I) or halogen ions (F - , Cl - , Br - , I - ), which has become active, reacts with the bridge (B) So that the bridge B can be etched and removed.
While the present invention has been described with reference to exemplary embodiments thereof, it will be understood by those of ordinary skill in the art that various changes in form and details may be made therein without departing from the spirit and scope of the invention as defined by the appended claims. will be. Accordingly, the true scope of the present invention should be determined by the technical idea of the appended claims.
100 ... photomask repair system
110 ... chamber
120 ... Vacuum device
130 ... gas supply device
140 ... laser irradiation device
150 ... window
160 ... Nozzle
M, M1, M2 ... photomask
L1, L2 ... laser beam
G ... gas
Claims (20)
A vacuum device for maintaining the inside of the chamber under vacuum;
A gas supply device for supplying an etching gas and a passivation gas into the chamber to adsorb the etchant gas on the surface of the photomask in the form of a single molecular layer; And
And a laser irradiation device for irradiating a laser beam to a portion of the photomask to be repaired in the chamber to dissociate the etching gas in the chamber,
The dissociated gas reacts with the portion to be repaired of the photomask to etch the portion to be repaired,
Wherein the passivation gas is adsorbed on the portion to be repaired so as to uniformly etch the portion to be repaired.
Wherein the etching gas comprises at least one of a fluorine (F) containing gas and a chlorine (Cl) containing gas.
The passivation gas is oxygen (O 2) containing gas, argon (Ar) containing gas and a nitrogen (N 2) containing the photomask repair system comprises at least one of a gas.
Wherein the laser beam comprises a top-hat beam.
Wherein the chamber includes a window through which the laser beam can pass.
Wherein the vacuum apparatus maintains the interior of the chamber at a pressure of 10 -4 Torr to 10 -7 Torr.
Wherein the gas supply device includes a nozzle for injecting the gas into the chamber.
The laser irradiation apparatus irradiates a laser beam having a wavelength of 248 nm to 355 nm.
Wherein the laser irradiation apparatus irradiates a laser beam at a frequency of 10 kHz to 50 kHz.
The laser irradiation apparatus was operated at 10 mJ / cm < 2 > ~ 20 mJ / cm 2 A photomask repair system that irradiates a laser beam of energy density.
Wherein the gas supply device comprises a mass flow controller (MFC).
Injecting an etching gas and a passivation gas into the chamber, and adsorbing the etching gas in the form of a single molecular layer on the surface of the image-taking photomask;
Irradiating a portion of the photomask to be repaired with a laser beam to dissociate the etching gas;
Attaching atoms generated by dissociation of the etching gas to a portion of the photomask to be repaired; And
And removing portions of the photomask to be repaired with the atoms,
Wherein the passivation gas is adsorbed on the portion to be repaired so as to uniformly etch the portion to be repaired.
The etch gas includes at least one of a fluorine (F) -containing gas and a chlorine (Cl) -containing gas, and the atoms disassociated by irradiation with the laser beam and attached to a portion to be repaired in the photomask are fluorine (F) Atoms and at least one of chlorine (Cl) atoms.
Wherein the passivation gas comprises at least one of an oxygen (O 2 ) containing gas, an argon (Ar) containing gas and a nitrogen (N 2 ) containing gas.
Wherein the laser beam comprises a top-hat beam.
Wherein the interior of the chamber is maintained at a pressure of 10 -4 Torr to 10 -7 Torr before the etch gas and the passivation gas are injected.
Wherein the wavelength of the laser beam irradiated on the photomask is 248 nm to 355 nm.
Wherein the frequency of the laser beam irradiated on the photomask is 10 kHz to 50 kHz.
Wherein the energy density of the laser beam irradiated on the photomask is 10 mJ / cm 2 to 20 mJ / cm 2 .
Wherein the etch gas and the passivation gas are injected into the chamber by a nozzle.
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020150148822A KR101737016B1 (en) | 2015-10-26 | 2015-10-26 | System and method for correcting photomask |
PCT/KR2016/010230 WO2017073906A1 (en) | 2015-10-26 | 2016-09-12 | Photo-mask repair system and method |
TW105130250A TWI620981B (en) | 2015-10-26 | 2016-09-20 | System and method for correcting photomask |
Applications Claiming Priority (1)
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KR1020150148822A KR101737016B1 (en) | 2015-10-26 | 2015-10-26 | System and method for correcting photomask |
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KR20170048001A KR20170048001A (en) | 2017-05-08 |
KR101737016B1 true KR101737016B1 (en) | 2017-05-17 |
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KR1020150148822A KR101737016B1 (en) | 2015-10-26 | 2015-10-26 | System and method for correcting photomask |
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KR (1) | KR101737016B1 (en) |
TW (1) | TWI620981B (en) |
WO (1) | WO2017073906A1 (en) |
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JP2006501651A (en) * | 2002-09-27 | 2006-01-12 | 東京エレクトロン株式会社 | Method and system for etching high-k dielectric materials |
JP3739573B2 (en) * | 1998-07-27 | 2006-01-25 | エスアイアイ・ナノテクノロジー株式会社 | Photomask defect correcting method and apparatus used therefor |
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KR20000061800A (en) * | 1999-03-31 | 2000-10-25 | 구자홍 | A manufacturing method of photo-resist's pattern using of laser |
US7504182B2 (en) * | 2002-09-18 | 2009-03-17 | Fei Company | Photolithography mask repair |
US6787783B2 (en) * | 2002-12-17 | 2004-09-07 | International Business Machines Corporation | Apparatus and techniques for scanning electron beam based chip repair |
DE10338019A1 (en) * | 2003-08-19 | 2005-03-24 | Nawotec Gmbh | Method for high-resolution processing of thin layers with electron beams |
KR101152555B1 (en) * | 2005-06-29 | 2012-06-01 | 엘지전자 주식회사 | An apparatus and method of repairing a pattern |
DE102008037943B4 (en) * | 2008-08-14 | 2018-04-26 | Nawotec Gmbh | Method and apparatus for electron-beam-induced etching and semiconductor device etched with a structure by means of such a method |
KR101051073B1 (en) * | 2008-12-17 | 2011-07-21 | 주식회사 코윈디에스티 | Repair method and repair system of halftone mask |
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JP3739573B2 (en) * | 1998-07-27 | 2006-01-25 | エスアイアイ・ナノテクノロジー株式会社 | Photomask defect correcting method and apparatus used therefor |
JP2006501651A (en) * | 2002-09-27 | 2006-01-12 | 東京エレクトロン株式会社 | Method and system for etching high-k dielectric materials |
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TWI620981B (en) | 2018-04-11 |
TW201727358A (en) | 2017-08-01 |
KR20170048001A (en) | 2017-05-08 |
WO2017073906A1 (en) | 2017-05-04 |
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