KR101737016B1 - System and method for correcting photomask - Google Patents

System and method for correcting photomask Download PDF

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Publication number
KR101737016B1
KR101737016B1 KR1020150148822A KR20150148822A KR101737016B1 KR 101737016 B1 KR101737016 B1 KR 101737016B1 KR 1020150148822 A KR1020150148822 A KR 1020150148822A KR 20150148822 A KR20150148822 A KR 20150148822A KR 101737016 B1 KR101737016 B1 KR 101737016B1
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South Korea
Prior art keywords
gas
photomask
laser beam
chamber
repaired
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KR1020150148822A
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Korean (ko)
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KR20170048001A (en
Inventor
김영중
황대순
박일현
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주식회사 이오테크닉스
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Priority to KR1020150148822A priority Critical patent/KR101737016B1/en
Priority to PCT/KR2016/010230 priority patent/WO2017073906A1/en
Priority to TW105130250A priority patent/TWI620981B/en
Publication of KR20170048001A publication Critical patent/KR20170048001A/en
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Publication of KR101737016B1 publication Critical patent/KR101737016B1/en

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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
    • G03F1/72—Repair or correction of mask defects
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
    • G03F1/80—Etching
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G03F7/2051—Exposure without an original mask, e.g. using a programmed deflection of a point source, by scanning, by drawing with a light beam, using an addressed light or corpuscular source
    • G03F7/2053—Exposure without an original mask, e.g. using a programmed deflection of a point source, by scanning, by drawing with a light beam, using an addressed light or corpuscular source using a laser
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/033—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/033—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers
    • H01L21/0334—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers characterised by their size, orientation, disposition, behaviour, shape, in horizontal or vertical plane
    • H01L21/0337—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers characterised by their size, orientation, disposition, behaviour, shape, in horizontal or vertical plane characterised by the process involved to create the mask, e.g. lift-off masks, sidewalls, or to modify the mask, e.g. pre-treatment, post-treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/268—Bombardment with radiation with high-energy radiation using electromagnetic radiation, e.g. laser radiation

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Computer Hardware Design (AREA)
  • Optics & Photonics (AREA)
  • Electromagnetism (AREA)
  • Toxicology (AREA)
  • Health & Medical Sciences (AREA)
  • Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Drying Of Semiconductors (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)

Abstract

An embodiment of the present invention provides a photomask repair system and a repair method for repairing a photomask through dissociation of gas through a laser beam when repair of a photomask used in a semiconductor process is required. The disclosed photomask repair system includes a chamber in which a photomask to be repaired is provided; A vacuum device for maintaining the inside of the chamber under vacuum; A gas supply device for supplying an etching gas and a passivation gas into the chamber; And a laser irradiating device for irradiating a portion of the photomask to be repaired within the chamber with a laser beam to dissociate the etching gas in the chamber, wherein the passivation gas is adsorbed on the portion to be repaired, The portions are etched uniformly.

Description

&Quot; System and method for correcting photomask "

The present invention relates to a photomask repair system and a repair method for repairing a portion to be repaired through a dissociation of a gas through a laser beam.

A photomask is a high precision plate used to form an integrated circuit on a wafer. Such a photomask is composed of a transparent substrate and a light-shielding pattern formed on one surface of the transparent substrate. The light-shielding pattern of the photomask defines the circuit pattern on the wafer through the exposure process. Theoretically, the critical dimension (CD) of the light-shielding pattern of the photomask and the CD of the corresponding circuit pattern formed on the wafer must correspond exactly. Here, the matching of the CD may mean that it corresponds at the same magnification, or it may mean that it corresponds at a different magnification. However, the CD of the light-shielding pattern of the photomask and the CD of the circuit pattern on the wafer may be different from each other due to a defect in an exposure apparatus such as a defective spatial distribution of a light source, a defect in a lens, and an error in a light-shielding pattern itself of a photomask. Recently, as the pattern becomes finer, the importance of improving CD scattering on wafers in a hot-spot region where the patterning margin is weak is increasing.

An embodiment of the present invention provides a photomask repair system and a repair method for repairing a photomask through dissociation of gas through a laser beam when repair of a photomask used in a semiconductor process is required.

A photomask repair system according to an embodiment of the present invention includes a chamber in which a photomask to be repaired is provided; A vacuum device for maintaining the inside of the chamber under vacuum; A gas supply device for supplying an etching gas and a passivation gas into the chamber; And a laser irradiating device for irradiating a portion of the photomask to be repaired within the chamber with a laser beam to dissociate the etching gas in the chamber, wherein the passivation gas is adsorbed on the portion to be repaired, The portions are etched uniformly.

The etching gas may include at least one of a fluorine (F) -containing gas and a chlorine (Cl) -containing gas.

The passivation gas may include at least one of an oxygen (O 2 ) -containing gas, an argon (Ar) -containing gas, and a nitrogen (N 2 ) -containing gas.

The laser beam may include a beam in the form of a top-hat.

The chamber may include a window through which the laser beam can pass.

The vacuum apparatus can maintain the inside of the chamber at a pressure of 10 -4 Torr to 10 -7 Torr.

The gas supply device may include a nozzle for injecting the gas into the chamber.

The laser irradiation apparatus can irradiate a laser beam having a wavelength of 248 nm to 355 nm.

The laser irradiation apparatus can irradiate a laser beam having a frequency of 10 kHz to 50 kHz.

The laser irradiation apparatus was operated at 10 mJ / cm < 2 > ~ 20 mJ / cm 2 A laser beam having an energy density can be irradiated.

The gas supply device may include a mass flow controller (MFC).

A method of repairing a photomask according to an embodiment of the present invention includes: providing a photomask in a chamber and then maintaining a vacuum inside the chamber; Injecting etch gas and passivation gas into the chamber; Irradiating a portion of the photomask to be repaired with a laser beam to dissociate the etching gas; Attaching atoms generated by dissociation of the etching gas to a portion of the photomask to be repaired; And a part of the photomask to be repaired is dropped together with the atoms, wherein the passivation gas is adsorbed on the portion to be repaired, thereby uniformly etching the repaired portion.

The etch gas includes at least one of a fluorine (F) -containing gas and a chlorine (Cl) -containing gas, and the atoms disassociated by irradiation with the laser beam and attached to a portion to be repaired in the photomask are fluorine (F) Atoms and chlorine (Cl) atoms.

The passivation gas may include at least one of an oxygen (O 2 ) -containing gas, an argon (Ar) -containing gas, and a nitrogen (N 2 ) -containing gas.

The laser beam may include a beam in the form of a top-hat.

The interior of the chamber may be maintained at a pressure of 10 -4 Torr to 10 -7 Torr before the etch gas and the passivation gas are injected.

The wavelength of the laser beam irradiated on the photomask may be between 248 nm and 355 nm.

The frequency of the laser beam irradiated on the photomask may be 10 kHz to 50 kHz.

The energy density of the laser beam irradiated on the photomask may be 10 mJ / cm 2 to 20 mJ / cm 2 .

The etching gas and the passivation gas may be injected into the chamber by a nozzle.

According to the embodiment of the present invention, as the degree of integration of a semiconductor circuit increases, a photomask in which errors occur in a photomask lithography process can be corrected at a level of several nm or less. Also, by using a photomask whose CD is corrected to a level of several nanometers or less for pattern formation on the wafer, the CD of the pattern on the wafer can be corrected at a level of several nm or less, for example, 1 nm.

Further, according to the embodiment of the present invention, the photomask can be uniformly etched by using the mixed gas of the etching gas and the passivation gas.

Also, according to the embodiment of the present invention, it is possible to precisely etch only a predetermined area to be repaired by using a laser beam in a top-hat shape.

1 schematically depicts a photomask repair system in accordance with an embodiment of the present invention.
2A and 2B show a laser beam in a Gaussian form and a laser beam in a top-hat form.
3A to 3D illustrate a process of repairing a CD of a pattern of a photomask according to an embodiment of the present invention.
4A to 4D illustrate a process of removing a bridge of a photomask according to an embodiment of the present invention.

Hereinafter, preferred embodiments of the present invention will be described in detail with reference to the accompanying drawings. The embodiments of the present invention are described in order to more fully explain the present invention to those skilled in the art, and the following embodiments may be modified into various other forms, It is not limited to the embodiment. Rather, these embodiments are provided so that this disclosure will be more thorough and complete, and will fully convey the concept of the invention to those skilled in the art.

In the following description, when an element is described as being connected to another element, it may be directly connected to another element, but a third element may be interposed therebetween. Similarly, when an element is described as being on top of another element, it may be directly on top of the other element, and a third element may be interposed therebetween. In addition, the structure and size of each constituent element in the drawings are exaggerated for convenience and clarity of description, and a part which is not related to the explanation is omitted. Wherein like reference numerals refer to like elements throughout. It is to be understood that the terminology used is for the purpose of describing the present invention only and is not used to limit the scope of the present invention.

1 schematically depicts a photomask repair system in accordance with an embodiment of the present invention.

1, a photomask repair system 100 according to the present embodiment includes a chamber 110, a vacuum apparatus 120, a gas supply apparatus 130, a laser irradiation apparatus 140, a window 150, (160).

A photomask M to be repaired is provided in the chamber 110 and the chamber 110 can be connected to the vacuum apparatus 120 and the gas supply apparatus 130. Further, the chamber 110 may include a window 150 through which the laser beam irradiated from the laser irradiation device 140 can be transmitted.

The vacuum apparatus 120 can provide a vacuum within the chamber 110 after the photomask M is provided in the chamber 110. [ Since only the gas to be injected is to be dissociated in the chamber 110, a high vacuum state needs to be maintained. Accordingly, the vacuum apparatus 120 may be provided to maintain the inside of the chamber 110 at a pressure of 10 -4 Torr to 10 -7 Torr.

The gas supply device 130 may inject an etching gas and a passivation gas into the chamber 110. The etching gas may be a gas containing a halogen element, for example, a fluorine (F) containing gas, a chlorine (Cl) containing gas, a bromine (Br) containing gas, an iodine (I) containing gas or the like. The gas may be appropriately selected depending on the material of the etch target, and a chlorine-containing gas such as CCl 4 , C 2 Cl 4 or C 2 H 2 Cl 2 or a chlorine-containing gas such as NF 3 , CF 4 , XeF 2 Or the like can be used. Passivation gas is a gas that enables uniformly etching the part to repair adsorbed on the part to repair of the photomask (M), oxygen (O 2) containing gas, argon (Ar) containing gas or a nitrogen (N 2 ) Containing gas may be used.

The gas supply 130 may include a mass flow controller (MFC). The mass flow controller can be used to measure and control the flow rate of the gas.

The gas supply device 130 may further include a nozzle 160 for injecting gas into the chamber 110. The inner diameter of the nozzle 160 may be 0.2 mm to 0.8 mm.

The laser irradiator 140 may irradiate a portion of the photomask M to be repaired in the chamber 110 with a laser beam. The light source may be an electron beam or a focused ion beam (FIB), but is not limited thereto.

The laser beam irradiated by the laser irradiating device 140 requires energy to dissociate the gas. The photon energy capable of dissociating the gas may be 3 eV or higher, but is not limited thereto. In order for the laser beam to dissociate the gas, the wavelength of the laser beam irradiated by the laser irradiation device 140 may be 248 nm to 355 nm, and the frequency may be 10 kHz to 50 kHz. The energy density of the laser beam is 10 mJ / cm < 2 > ~ 20 mJ / cm 2 . Also, as will be described later, the laser beam emitted from the laser irradiator 140 may have a top-hat shape with a uniform intensity depending on the position.

The window 150 may be formed to be capable of transmitting a laser beam, and may be made of glass or quartz.

2A and 2B show a laser beam in a Gaussian form and a laser beam in a top-hat form.

FIG. 2A shows a laser beam in a ghost form. Referring to FIG. 2A, it can be seen that the intensity of the laser beam in the Gaussian form is largest in the center portion, and decreases in intensity toward the edge. Therefore, the Gaussian laser beam has a disadvantage that it is difficult to irradiate the laser beam of uniform intensity to the irradiation region.

On the other hand, FIG. 2B shows a top-hat type laser beam. Referring to FIG. 2B, it can be seen that the intensity of the top-hat type laser beam is constant compared to the Gaussian type laser beam shown in FIG. 2A. Thus, the laser beam of the top-hat type can be irradiated with the laser beam of uniform intensity over the irradiation region. Since the intensity of the laser beam is weak outside the irradiation region, unintentional etching of the photomask M due to the dissociation of the etching gas in the non-irradiation region can be prevented.

3A to 3D illustrate a process of repairing a CD of a pattern of a photomask according to an embodiment of the present invention.

Referring to FIG. 3A, the patterns in the photomask M1 may be formed at predetermined intervals. The width of one of the plurality of patterns may be D1 and the CD between the patterns may become poor if the D1 value has an error with the width of the pattern to be formed. On the other hand, the error thickness may be very small to a few nm or less, and in such a case where the error is too small, it may be inappropriate or impossible to apply a direct removal method using an electron beam. This is because, if a direct elimination method using an electron beam is applied, there is a possibility that the peripheral region which does not desire to be repaired is also removed, and there is a possibility that the entire photomask is twisted due to the generated heat. Accordingly, in the photomask repair method of this embodiment, the CD of the photomask can be indirectly corrected as described with reference to FIGS. 3B to 3D.

Referring to FIG. 3B, the photomask M1 is placed in the vacuum chamber 110 and the gas G is injected. The gas G may include an etching gas and a passivation gas. The chamber 110 may be maintained at a pressure of 10 -4 Torr to 10 -7 Torr before the gas G is injected. The etching gas may be a gas containing a halogen element, for example, a fluorine (F) containing gas, a chlorine (Cl) containing gas, a bromine (Br) containing gas, an iodine (I) containing gas or the like. The etching gas can be appropriately selected according to the material of the etching target, and a chlorine-containing gas such as CCl 4 , C 2 Cl 4 or C 2 H 2 Cl 2 or a fluorine-containing gas such as NF 3 , CF 4 or XeF 2 . Passivation gas is a gas that enables uniformly etching the part to repair adsorbed on the part to repair of the photomask (M), oxygen (O 2) containing gas, argon (Ar) containing gas or a nitrogen (N 2 ) Containing gas may be used.

The injected etching gas may be in an inactive state, diffused and diffused on the surface of the photomask M1 to be adsorbed in a mono-layer form. The etching gas adsorbed in a mono-layer form is inert and does not react with the photomask M1.

Further, the injected passivation gas may be diffused and adsorbed on the surface of the photomask M1. The passivation gas can etch the photomask uniformly at the same depth when the etching gas etches the photomask.

The etching gas and the passivation gas may be injected into the chamber 110 through the nozzle 160 and the inner diameter of the nozzle 160 may be 0.2 mm to 0.8 mm.

Referring to FIGS. 3C and 3D, the laser beam L1 generated from the laser irradiation device 140 is irradiated to both sides of the portion to be repaired, that is, the photomask M1 pattern. In order for the laser beam L1 to dissociate the etching gas, the wavelength of the laser beam L1 may be 248 nm to 355 nm, and the frequency may be 10 kHz to 50 kHz. Further, the energy density of the laser beam L1 is 10 mJ / cm < 2 > ~ 20 mJ / cm 2 .

Here, the laser beam L1 can use the top-hat type beam shown in Fig. 2B. When a top-hat beam is used, the laser beam L1 can be irradiated only to the portion to be repaired of the photomask M1. Since the intensity of the laser beam outside the irradiation region is weak, The etching of the photomask (M1) pattern due to the dissociation of the etching gas may not occur.

When the laser beam L 1 is irradiated, the etching gas adsorbed in the irradiated region is dissociated by the laser beam L 1 to become an active state, whereby atoms or ions can be generated. The etching gas, for example, halogen atoms (F, Cl, Br, I) or halogen ions (F - , Cl - , Br - , I - ) which has been changed into an active state reacts with the photomask M 1 and is converted into a volatile gas The photomask can be etched to a predetermined thickness D2 and removed.

In this case, the passivation gas is also adsorbed in the region irradiated with the laser beam L 1, and the passivation gas can act to suppress the reaction of the etch gas, which has become active, with the photomask M 1. This makes it possible to prevent excessive etching of the portion of the photomask M1 that is to be repaired by the etched gas that has been changed to the active state, The portion can be etched to a uniform depth.

4A to 4D illustrate a process of removing a bridge of a photomask according to an embodiment of the present invention.

Referring to FIG. 4A, a plurality of patterns may be formed on the photomask M2 at predetermined intervals. There may be a bridge B as shown between the above patterns. The presence of the bridge B may cause unnecessary light shielding during the exposure process, which may cause a failure in the circuit pattern on the wafer. On the other hand, the width and thickness of the bridge (B) may be as small as a few nm or less, and when the width and the thickness are too small, it may be inappropriate or impossible to apply a direct removal method using an electron beam. This is because not only the bridge B but also the peripheral area thereof may be removed together with the direct removal method using the electron beam, and there is a possibility that the entire photomask is twisted due to the generated heat. Accordingly, in the photomask repair method of this embodiment, the bridge B generated in the photomask can be corrected indirectly as described in FIGS. 4B to 4D.

Referring to FIG. 4B, the photomask M2 is placed in a vacuum chamber 110 and an inert gas G is injected. The gas (G) may include an etching gas. The chamber 110 may be maintained at a pressure of 10 -4 Torr to 10 -7 Torr before the gas G is injected. The etching gas may be a gas containing a halogen element, for example, a fluorine (F) containing gas, a chlorine (Cl) containing gas, a bromine (Br) containing gas, an iodine (I) containing gas or the like. The gas may be appropriately selected depending on the material of the etch target, and a chlorine-containing gas such as CCl 4 , C 2 Cl 4 or C 2 H 2 Cl 2 or a chlorine-containing gas such as NF 3 , CF 4 , XeF 2 Or the like can be used.

The injected inert etching gas is diffused and diffused on the surface of the photomask M2 to be adsorbed in a mono-layer form. The etching gas adsorbed in a mono-layer form is inactive and does not react with the photomask M2. In addition, the gas G may be injected into the chamber 110 through the nozzle 160, and the inner diameter of the nozzle 160 may be 0.2 mm to 0.8 mm.

Referring to FIGS. 4C and 4D, the laser beam L2 generated from the laser irradiating device 140 is irradiated to the portion to be repaired, that is, the bridge B portion. In order for the laser beam L2 to dissociate the gas, the wavelength of the laser beam L2 may be 248 nm to 355 nm, and the frequency may be 10 kHz to 50 kHz. The energy density of the laser beam L2 is 10 mJ / cm 2 to 20 mJ / cm 2 .

Here, the laser beam L2 can use the top-hat type beam shown in Fig. 2B. When a top-hat beam is used, the laser beam L2 can be irradiated only to the part to be repaired of the photomask M2, that is, the bridge B, and the intensity of the laser beam The etching of the photomask (M2) pattern due to the dissociation of the etching gas may not occur at the portion other than the irradiation region.

When the laser beam L2 is irradiated, the etching gas adsorbed in the irradiated region is dissociated by the laser beam L2 to become an active state, whereby atoms or ions can be generated. The etch gas, such as halogen atoms (F, Cl, Br, I) or halogen ions (F - , Cl - , Br - , I - ), which has become active, reacts with the bridge (B) So that the bridge B can be etched and removed.

While the present invention has been described with reference to exemplary embodiments thereof, it will be understood by those of ordinary skill in the art that various changes in form and details may be made therein without departing from the spirit and scope of the invention as defined by the appended claims. will be. Accordingly, the true scope of the present invention should be determined by the technical idea of the appended claims.

100 ... photomask repair system
110 ... chamber
120 ... Vacuum device
130 ... gas supply device
140 ... laser irradiation device
150 ... window
160 ... Nozzle
M, M1, M2 ... photomask
L1, L2 ... laser beam
G ... gas

Claims (20)

A chamber in which a photomask to be repaired is provided;
A vacuum device for maintaining the inside of the chamber under vacuum;
A gas supply device for supplying an etching gas and a passivation gas into the chamber to adsorb the etchant gas on the surface of the photomask in the form of a single molecular layer; And
And a laser irradiation device for irradiating a laser beam to a portion of the photomask to be repaired in the chamber to dissociate the etching gas in the chamber,
The dissociated gas reacts with the portion to be repaired of the photomask to etch the portion to be repaired,
Wherein the passivation gas is adsorbed on the portion to be repaired so as to uniformly etch the portion to be repaired. The method according to claim 1,
Wherein the etching gas comprises at least one of a fluorine (F) containing gas and a chlorine (Cl) containing gas. The method according to claim 1,
The passivation gas is oxygen (O 2) containing gas, argon (Ar) containing gas and a nitrogen (N 2) containing the photomask repair system comprises at least one of a gas. The method according to claim 1,
Wherein the laser beam comprises a top-hat beam. The method according to claim 1,
Wherein the chamber includes a window through which the laser beam can pass. The method according to claim 1,
Wherein the vacuum apparatus maintains the interior of the chamber at a pressure of 10 -4 Torr to 10 -7 Torr. The method according to claim 1,
Wherein the gas supply device includes a nozzle for injecting the gas into the chamber. The method according to claim 1,
The laser irradiation apparatus irradiates a laser beam having a wavelength of 248 nm to 355 nm. 9. The method of claim 8,
Wherein the laser irradiation apparatus irradiates a laser beam at a frequency of 10 kHz to 50 kHz. 9. The method of claim 8,
The laser irradiation apparatus was operated at 10 mJ / cm < 2 > ~ 20 mJ / cm 2 A photomask repair system that irradiates a laser beam of energy density. The method according to claim 1,
Wherein the gas supply device comprises a mass flow controller (MFC). Providing a photomask in the chamber, and then maintaining the interior of the chamber under vacuum;
Injecting an etching gas and a passivation gas into the chamber, and adsorbing the etching gas in the form of a single molecular layer on the surface of the image-taking photomask;
Irradiating a portion of the photomask to be repaired with a laser beam to dissociate the etching gas;
Attaching atoms generated by dissociation of the etching gas to a portion of the photomask to be repaired; And
And removing portions of the photomask to be repaired with the atoms,
Wherein the passivation gas is adsorbed on the portion to be repaired so as to uniformly etch the portion to be repaired. 13. The method of claim 12,
The etch gas includes at least one of a fluorine (F) -containing gas and a chlorine (Cl) -containing gas, and the atoms disassociated by irradiation with the laser beam and attached to a portion to be repaired in the photomask are fluorine (F) Atoms and at least one of chlorine (Cl) atoms. 13. The method of claim 12,
Wherein the passivation gas comprises at least one of an oxygen (O 2 ) containing gas, an argon (Ar) containing gas and a nitrogen (N 2 ) containing gas. 13. The method of claim 12,
Wherein the laser beam comprises a top-hat beam. 13. The method of claim 12,
Wherein the interior of the chamber is maintained at a pressure of 10 -4 Torr to 10 -7 Torr before the etch gas and the passivation gas are injected. 13. The method of claim 12,
Wherein the wavelength of the laser beam irradiated on the photomask is 248 nm to 355 nm. 18. The method of claim 17,
Wherein the frequency of the laser beam irradiated on the photomask is 10 kHz to 50 kHz. 18. The method of claim 17,
Wherein the energy density of the laser beam irradiated on the photomask is 10 mJ / cm 2 to 20 mJ / cm 2 . 13. The method of claim 12,
Wherein the etch gas and the passivation gas are injected into the chamber by a nozzle.
KR1020150148822A 2015-10-26 2015-10-26 System and method for correcting photomask KR101737016B1 (en)

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