JP7265493B2 - Apparatus and method for measuring information - Google Patents

Description

Cross-reference to related applications
[0001] This application is the subject matter of European Patent Application Publication No. 17181716.6 filed July 17, 2017 and European Patent This application claims priority from Application Publication No. 17205177.3.

[0002] The present disclosure relates to measuring information during the manufacture of semiconductor devices.

[0003] A lithographic apparatus is a machine constructed to apply a desired pattern onto a substrate. A lithographic apparatus can be used, for example, in the manufacture of integrated circuits (ICs). A lithographic apparatus, for example, applies a pattern (often called a “design layout” or “design”) in a patterning device (e.g. mask) onto a radiation-sensitive material (resist pattern) provided on a substrate (e.g. a wafer). ) layer.

[0004] A lithographic apparatus may use electromagnetic radiation to project a pattern onto a substrate. The wavelength of this radiation determines the minimum feature size that can be formed on the substrate. Typical wavelengths currently in use are 365 nm (i-line), 248 nm, 193 nm and 13.5 nm. A lithographic apparatus using extreme ultraviolet (EUV) radiation with a wavelength in the range of 4-20 nm, such as 6.7 nm or 13.5 nm, can, for example, produce smaller features on a substrate than a lithographic apparatus using radiation with a wavelength of 193 nm. can be used to form a

[0005] To perform high aspect ratio etching as part of the IC or semiconductor device manufacturing process, an amorphous carbon layer that can be used as a so-called "hard mask" is deposited on certain substrate layers. The carbon layer can be used to etch deep high aspect ratio structures inside the IC. Amorphous carbon layers are widely used, for example, in the fabrication of dynamic random access memory (DRAM) devices and 3D NAND (NAND) devices. However, carbon layers can also be used in the manufacture of other types of ICs and semiconductor devices.

[0006] At various stages in the manufacturing process of an IC, a substrate containing an IC or semiconductor device is placed so that patterns of structures forming part of the IC or semiconductor device can be accurately printed over the underlying pattern. Alignment may be required. Misalignment can cause so-called overlay (OV) errors between adjacent layers of an IC or semiconductor device, which can result in non-operating or sub-optimal devices. Information such as the position and/or orientation of features, such as alignment features or other marks, provided in at least one layer, using suitable instrumentation such as alignment sensors, to verify alignment of an IC or semiconductor device. can be measured.

[0007] If a carbon layer is present, the alignment sensor may not be able to detect features underlying the carbon layer. This is because the carbon layer absorbs radiation at the wavelengths at which the alignment sensor operates. Without accurate detection of these features, it may be difficult to achieve the necessary accuracy (eg, possibly nm placement accuracy) for printing structures on each layer of the substrate.

[0008] Similar problems can occur with metal layers provided in IC devices (eg, 3D IC devices) and other semiconductor devices. Such devices can pose challenges in the alignment process. This is because such layers may be opaque to the wavelengths at which the alignment sensor operates. Metal layers may have high refractive and extinction coefficients, which may prevent the alignment sensor from measuring information obtained from the underlying features that are opaque.

[0009] Opaque metal or carbon layers have been or will be used as hard masks or functional layers in at least the following devices.
- 3D-NAND devices may include carbon or doped carbon hardmasks. Such devices may include a heavy metal (eg, tungsten (W)) hard mask with a thickness ranging from about 0.4-2 μm.
- 3D cross-point devices use multiple metal layers (eg W layers) with thickness of each layer ranging from about 20 to 100 nm.

[00010] High reflectivity at the interface between the metal layer and other substrate layers (e.g. metal/(bottom anti-reflective coating (BARC) or resist), metal/ceramic, metal/semiconductor) and high extinction of the metal layer Combined with the attenuation of light by the factor, the signal level detected by the alignment sensor after passing through the opaque metal layer can be insufficient.

[00011] High reflectivity of opaque metal layers or amorphous carbon layers can lead to erroneous or erroneous measurements by alignment sensors. Further, such opaque layers may trace the topography of the layers below and thus have a pattern of features (eg, alignment marks, gratings, etc.) provided in one of those layers. However, such features may reside on the opaque layer at positions shifted from the original feature positions. For example, shifts ranging from about 1-10 nm can be observed in some cases, and in the worst case the magnitude of the shift can be comparable to the thickness of the metal layer. The level of shift may depend on chemical-mechanical polishing (CMP), deposition and/or other operations corresponding to the fabrication of such layers and the layers below them. Similarly, the properties of the opaque layer (e.g., refractive index n, extinction coefficient k, etc.) can be distorted by the topography or composition of the underlying layer, thus reflected light from the opaque layer will appear as shifted features/marks. It may be imprinted with a pattern. For 3D crosspoint devices, the shift can be on the order of 1-2 nm.

[00012] Various techniques are available to improve alignment when opaque metal or carbon layers are used. For example, in a clear-out process, a litho-etching step can be performed on the areas of the opaque layer overlying the features/marks so that the material in these areas can be removed. This area can then be refilled with another (preferably not optically opaque) material. Finally, a CMP step may be performed to planarize the surface and remove the refill material from other portions of the opaque layer (ie, areas other than those overlying the alignment features). However, some of these steps can be costly (eg, dry etching, which may be performed if the clearout is done on a relatively thick hardmask).

[00013] Another process performed to improve alignment when opaque metal or carbon layers are used is to add additional features or other alignment features relative to the original alignment features/marks provided in the substrate. and such additional features are visible on the upper mating surface of the opaque layer. Such processing may require several additional lithography/deposition steps, which can be costly and can reduce yield due to contamination or variability caused by the additional process steps. and/or may degrade the product overlay (i.e. errors can accumulate when the features/marks are copied to a new layer, which can degrade the product overlay).

[00014] Current approaches to the alignment of substrates containing carbon layers involve providing additional alignment features or marks in upper or intermediate layers of the substrate to measure the alignment of the substrate with an alignment sensor. In one example, the alignment sensor can be configured to detect reflections from alignment features on the top surface of the amorphous carbon layer.

[00015] For example, apparatus, tools, methods and apparatus for measuring information related to the position and/or alignment of features (e.g., target alignment marks, etc.) in a substrate (e.g., during fabrication of a semiconductor device including the substrate). Devices, tools, methods and systems related to systems or measuring same are provided.

[00016] The devices, tools, methods and/or systems described herein measure information in a cost-effective manner, take fewer steps and/or take less time than other solutions. , reduce or eliminate the risk of contamination affecting the substrate, improve the reliability and/or accuracy of measurement results associated with measuring information, increase product yield, and/or at least one of allowing information to be measured through a substantially opaque and/or reflective layer.

[00017] According to one example of the present disclosure, an apparatus is provided for measuring information related to at least one feature in a semiconductor device substrate. The at least one feature may be at least partially obscured by the carbon-containing layer such that optical signals for measuring information associated with the at least one feature may be prevented from reaching the feature. The at least one feature may be at least partially obscured by the layer comprising metal such that optical signals for measuring information related to the at least one feature may be prevented from reaching the feature. The device may include an energy delivery system. The energy delivery system may be configured to modify at least one portion of the layer to make at least one portion more transparent, such that at least a portion of the optical signal conveys information related to the at least one feature. It can propagate through at least one portion of the layer for measurement.

[00018] In use, the energy delivery system may structurally modify at least one portion of the carbon-containing layer, which may include or define a hard mask of the substrate, thereby increasing the transparency of the at least one portion. can be enhanced. The energy delivery system can chemically and/or structurally modify at least one portion of the metal-containing layer to increase the transparency of at least one portion. Increasing the transparency of the portions can allow optical signals for measuring information related to the at least one feature to propagate through the at least one portion to reach the feature, the feature being an alignment mark , alignment marks, overlay features, metrology targets or any other feature on the substrate. An optical signal may interact with at least one feature such that a return optical signal can propagate through at least one portion. At least one characteristic of the return optical signal may be measured to determine information related to the at least one feature. The information provided by the returned optical signal indicates at least one of the presence, position, orientation, etc. of at least one feature by allowing direct measurement through at least one portion modified by the optical signal. obtain. The ability to make direct measurements means that fewer lithographic and/or etching and/or deposition steps are required during the fabrication of semiconductor device substrates, thereby reducing the time and effort required in the fabrication process. can reduce spending. Direct measurements can allow the apparatus to measure substrate alignment more accurately than indirect alignment methods, thereby aligning semiconductor, conductor, insulator and/or other structures. It becomes possible to reduce overlay errors between layers including.

[00019] The energy delivery system may be configured to emit a beam for modifying at least one portion of the layer by reducing the extinction and/or refractive index of carbon in at least one portion of the layer.

[00020] The energy delivery system causes a phase change in the carbon (eg, in at least one portion of the layer) and/or increases the concentration of tetravalent (sp3-coordinated) carbon atoms in at least one portion of the layer. to emit a beam for modifying at least one portion of the layer.

[00021] The beam may include radiation and/or particles.

[00022] Inducing a phase change in the carbon makes it possible to reduce the extinction coefficient of the layer for a given wavelength. For example, by modifying the layers, for at least one wavelength in the range 0.5 μm to 2 μm, the extinction coefficient “k” ranges from 0.4 above to below 0.4, 0.2, 0.1, etc. value can be reduced.

[00023] The phase change can modify the carbon in at least one portion of the layer such that the carbon forms diamond and/or diamond-like carbon.

[00024] The layer may comprise amorphous carbon, graphite, DLC and/or diamond or any other form of carbon. The layers may include materials different from graphite or DLC. The layer may contain at least 10-50% or any other percentage of carbon or doped carbon. Layers may include carbon doped with at least one of hydrogen, boron, tungsten, nitrogen and/or any other suitable element, compound or impurity.

[00025] After exposure to the beam delivery system, the carbon layer may contain diamond or diamond-like carbon and/or may increase in concentration. The size of the diamond or DLC domains can be limited to approximately any of the values (n ^−0.3 ,h), where n is the dopant concentration and h is the layer thickness. Diamond domains comparable to the layer thickness (eg, about 0.5-5 μm) can be microdiamonds. Microdiamonds can act as efficient scattering centers for the radiation of alignment systems that measure information. Examples of wavelengths that can be scattered by microdiamonds are 0.5-1 μm, 1-2 μm, or any other possible wavelength range. Replacing microdiamonds with smaller scatterers, such as nanodiamonds (e.g., d<0.1 μm), may enhance the visibility of at least one feature through at least one portion, which occurs within the layer. This is thought to be due to the fact that less scattering occurs. Proper selection of alignment measurement systems or other optics operating at a particular wavelength or wavelengths can reduce the effect of scattering that is dependent on the size and/or concentration of scatterers in the layer. Appropriate selection of the composition and/or thickness of the carbon-containing layer and/or sub-layers within this layer and the radiation and/or particle fluence and/or power and/or phase of the energy delivery system In combination with adjusting the distribution, it is possible to reduce the average (or maximum) size of the scatterers, which, for example, transforms the layer to contain nanodiamonds instead of microdiamonds. etc.

[00026] Diamond and diamond-like carbon (DLC) can have an extinction coefficient of less than 0.1 for at least one wavelength in the visible and/or infrared spectrum.

[00027] The energy delivery system may include at least one of at least one laser that emits radiation and/or at least one source of a focused beam of energetic particles.

[00028] At least one laser may be configured to illuminate at least one portion in a scanner (eg, a scanner used during a manufacturing process when resist is applied to a substrate). It is understood that resist distortion can occur in the scanner because the boiling point of the resist is lower than the boiling point of the carbon-containing layer. at least one laser using a separate energy source (e.g., as part of a stand-alone tool for modifying at least one portion and/or measuring information related to at least one feature); It can be configured to illuminate one portion. In this example, laser irradiation of at least one portion may be performed prior to applying the optional additional hard mask material, bottom anti-reflective coating (BARC) and/or resist layer to the substrate.

[00029] By replacing at least one litho-etching step during fabrication of the substrate with a potentially much cheaper laser irradiation step, direct alignment through a layer comprising at least one portion can improve overlay. be possible. Time and expense can be saved by eliminating the step involving refilling the clearout with a material that is transparent to the wavelength of the optical signal and optionally etch resistant.

[00030] The at least one laser may comprise a pulsed laser source configured to emit a series of laser pulses. A pulsed laser source may be configured to emit at least one laser pulse.

[00031] The at least one laser may be configured to emit radiation having at least one wavelength in the range of 4 nm to 3 μm. It is understood that the radiation may include other radiation or several wavelengths and may include the output of, for example, harmonic generators.

[00032] The at least one laser has visible and/or infrared laser pulses with a pulse duration ranging from 5 fs to 500 ps, an ultraviolet laser pulse having a pulse duration ranging from 1 ps to 500 ns, and a pulse duration ranging from 1 fs to 100 ns. can be configured to emit one or more such as soft X-ray to DUV laser pulses having a pulse duration of . The energy delivery system may include a laser configured to emit pulses having a duration of less than 100 ns, optionally less than 10 ns, optionally greater than 10 fs. The at least one laser may have other pulse durations such as microseconds, nanoseconds, picoseconds, femtoseconds, attoseconds, etc. and/or other wavelengths such as X-ray, soft X-ray, EUV, DUV, UV, It is understood that it can be configured to emit laser pulses in the visible, infrared, mid-infrared, far-infrared, THz or other portion of the electromagnetic spectrum.

[00033] The at least one laser may be configured to emit an initial pulse train including at least one laser pulse of a first pulse duration. The at least one laser may be further configured to emit a subsequent pulse train including at least one laser pulse of a second, shorter pulse duration.

[00034] The initial pulse train may include a pre-pulse, which may include nanosecond and/or picosecond laser pulses. The next pulse train may include femtosecond laser pulses. Temperature and/or pressure changes may occur in at least one portion as a result of the interaction of the pulse train with the layer. By using different pulse durations, the nature of the interaction between the laser pulse and the layer can be controlled to decouple temperature and pressure in at least one portion. For example, there may be a temperature rise associated with an initial pulse train, which may include at least one of nanosecond, picosecond and femtosecond pulses. A pressure and/or temperature increase associated with the next pulse train may occur, which may include femtosecond pulses. Fine or powerful control of properties of at least one portion by providing at least one laser with at least one different pulse duration that may have a specific influence on the interaction of the laser pulse with the layer. It may be possible to do For example, by appropriately choosing laser parameters and/or delays between two or more pulse trains, it is possible to control the size, distribution and/or debris particle generation and grain size of the phase-changed material. obtain. A nanosecond pulse can be used to initiate the process of modifying the layer. For example, by starting with nanosecond pulses, the material of at least one portion can be thermalized at temperatures above 500° C., 1000° C., 2000° C., and the like. By using femtosecond pulses, the pressures and/or temperatures involved can be significantly greater than with nanosecond pulses. For example, pressure pulses can be on the order of 0.1 to 10 gigapascals or any other pressure, and the temperatures involved can be on the order of 100 to 10,000° C. or any other temperature. It is understood that any other temperature and/or pressure may be generated in the layer during modification with radiation and/or particles.

[00035] It will be appreciated that any suitable selection of laser pulses may be made to effect the modification of at least one portion. For example, although the present example describes the subsequent pulse train as including femtosecond pulses, it may be possible to use nanosecond and/or picosecond pulses in the subsequent pulse train. Although nanosecond, picosecond and femtosecond pulse durations are described, other pulse duration regimes may also be used, e.g. microseconds, attoseconds, etc. for one or both of the first and subsequent pulse trains can be used. It is further understood that controlling other parameters such as pulse energy, number of pulses, peak radiant fluence, laser repetition rate, amount of dispersion, wavelength, polarization, etc. can affect modification of at least one portion.

[00036] The at least one laser may be configured to emit radiation having a peak radiation fluence or intensity below the ablation threshold of the layer.

[00037] If the peak radiation fluence or intensity of at least one pulse exceeds the ablation threshold, debris particles may be generated, which may present a risk to subsequent imaging and overall yield. It is understood that other parameters, such as pulse number, laser repetition rate, thermal conductivity, layer extinction coefficient and/or refractive index, etc., may influence the ablation threshold.

[00038] The at least one laser may be configured to emit at least one of linearly polarized radiation, non-linearly polarized radiation, elliptically polarized radiation and helically polarized radiation.

[00039] The at least one laser may be configured to emit a series of laser pulses. Each laser pulse may have one of linear, circular, elliptical and helical polarization, and/or the sequence of laser pulses may be such that some pulses in the train have a different polarization than other pulses in the train. etc. The at least one laser may be configured to change the polarization of at least one pulse in the laser pulse sequence. In one example, helical polarization may be more effective than elliptical polarization, and elliptical polarization itself may be more effective than linear polarization at generating smaller scatterers. It is understood that any randomization of polarization can be advantageous.

[00040] Varying the polarization of the laser pulse may prevent the formation of ripples in or adjacent to at least one portion. Ripple can appear when femtosecond and/or picosecond pulses at near-ablation and ablation levels interact with materials that have a relatively high concentration of electrons in the conduction band. Such ripples may have a periodicity that can degrade the properties of the return optical signal, thereby degrading the quality of information generated from at least one feature. Ripple can cause periodic variations in the extinction coefficient and/or refractive index and/or thickness of layers containing carbon and/or modified carbon. Ripples may act similarly to gratings or other diffractive elements and may cause arbitrary shifts in the diffraction pattern formed by features (which may be in the form of gratings). Such ripples may be the result of the interaction of linearly polarized radiation with electron density waves induced (eg, by the formation of polaritons). The process of ripple formation is described in Pan et al., "Threshold Dependence of Deep- and Near-subwavelength Ripples Formation on Natural MoS2 Induced by Femtosecond Laser", Scientific Reports 6, 19571 (2016), incorporated herein by reference. Are listed. The same mechanisms (e.g., described in Pan et al.) can lead to periodicity and/or size enhancement of grains in phase-changed materials, thus reducing any randomization of polarization, e.g. It is advantageous to do so during at least one pulse (e.g. helical polarization etc.) or between pulses (e.g. rotation of linear polarization from one pulse to another within a pulse train or change to elliptical polarization etc.). obtain.

[00041] The energy delivery system may be configured to emit radiation and/or particles for pulsed heating of at least one portion of the layer.

[00042] The energy delivery system may be configured to provide a fluence comparable to that of at least one laser. For example, the fluence can range from 0.01 to 1 J/cm ² and/or the pulse duration can be shorter than 10 ns. It is understood that the energy delivery system can be configured to provide varying fluences and/or pulse durations.

[00043] The energy delivery system emits one or more of a beam comprising an electron beam, an ion beam, a neutral beam, an extreme ultraviolet (EUV) beam in the range of 5-20 nm, and radiation having a wavelength in the range of 20-100 nm. can be configured to The beam may contain radiation and/or particles.

[00044] The energy delivery system may be configured to emit radiation and/or particles for modifying at least one portion of the metal-comprising layer.

[00045] The energy delivery system comprises at least one of the metal-containing layers in the presence of a reaction medium to chemically transform at least one portion of the layer to change the chemical composition of at least one portion. It can be configured to modify parts. The reaction medium may include gas and/or liquid, which may be sufficiently transparent to the beam of the energy delivery system.

[00046] The energy delivery system may include a laser configured to emit a pulse having a duration of less than 100 ns, optionally less than 10 ns, optionally greater than 10 fs.

[00047] The laser may be configured to deliver a plurality of pulses, optionally the pulse repetition rate may be at least 1 kHz, optionally the pulse repetition rate may be at least 1 MHz, And/or optionally, the pulse duty cycle may be less than 1%.

[00048] The laser may be configured to emit radiation having a fluence in the range of 0.01 to 1 J/ ^cm2 .

[00049] The energy delivery system is configured to provide an ion beam for saturating the metal-comprising layer with other atoms, ions or molecules to enhance the transparency of at least one portion of the metal-comprising layer. obtain.

[00050] The laser irradiation for modification of the at least one portion is continuous wave and/or with a total fluence of greater than 0.01 J/ ^cm2 and/or a pulse duration of less than 10 ns. or may be replaced by or accompanied by localized exposure to a pulsed ion beam or plasma. Ions implanted by localized exposure may exit hot tracks, where pulsed heating and quenching may occur such that diamond-phase and/or DLC-phase carbon can be produced. The ion beam energy may be greater than 1 eV, optionally greater than 100 eV. The ions used may include C ions and/or at least one of B, N, O, Ga, He, Ne, Ar, Kr, Xe, and the like. Using one or more noble gas ions can facilitate outgassing and allow the layer to remain free of additional dopants.

[00051] The device may include an electrical connection configured to connect to the layer and provide a voltage/current or ground connection to prevent charging of the layer. For example, when ions or electrons are directed to a substrate as part of an energy delivery system, a layer containing carbon or metal is charged so that it can defocus or deflect a focused charged particle beam incident on the layer. It can be connected to a voltage source/current source to prevent effects, or it can be grounded. This deflection effect may occur if the original (eg, high extinction coefficient) layer is a conductor.

[00052] The apparatus may be configured to facilitate outgassing using one or more noble gas ions to leave the layer free of additional dopants; or may be configured to direct electrons to the substrate.

[00053] The energy delivery system may include an anodization system configured to provide an electric field potential between a layer comprising a metal and an electrode for generating an electric field. The apparatus may be configured to chemically transform at least one portion of the layer to provide a reaction medium for changing the chemical composition of at least one portion.

[00054] The apparatus may be configured to deposit a protective layer and/or a clearout protective layer on the layer around at least one portion of the layer. Alternatively, separate equipment can be used to deposit the protective layer and/or the clearout protective layer prior to anodization.

[00055] The apparatus may include a liquid application system configured to provide a conductive liquid between at least one portion of the metal-comprising layer and the electrode.

[00056] The apparatus may include a substrate support configured to support the substrate such that at least a portion of the substrate does not come into contact with the conductive liquid. Alternatively or additionally, the apparatus may include an insulating layer applicator configured to at least partially apply an insulating layer to the substrate to prevent contact between a portion of the substrate and the conductive liquid. The insulating layer may be removable (eg, the insulating layer may temporarily mask a portion of the substrate from exposure to the conductive liquid during the anodization process). The insulating layer may be removed if desired, for example after the anodization process is completed.

[00057] An anodization system may include an energy source connected to the metal layer and the electrode to generate an electric field between the metal layer and the electrode. The energy source may be configured to provide continuous and/or pulsed voltage and/or current.

[00058] The energy source may include a voltage source electrically connected to the metal layer and the electrode having a polarity such that the metal layer forms the anode and the electrode forms the cathode.

[00059] The anodization system may be configured to perform electrochemical and/or photoelectrochemical anodization to modify at least one portion of the metal-comprising layer.

[00060] The at least one portion may be defined in a prior litho-etching process through openings in a protective layer provided or formed over the metal-containing layer.

[00061] At least one portion may be defined by a focused beam of the energy delivery system.

[00062] The energy delivery system chemically, electrochemically and/or photoelectrochemically converts at least one portion of the layer to change the chemical composition of the at least one portion. Underneath, it may be configured to modify at least one portion of a layer comprising metal.

[00063] The apparatus may include a chamber containing the reaction medium.

[00064] The chamber may be configured to allow radiation and/or particles to interact with the metal-containing layer. The chamber may include transparent sections that allow radiation and/or particles to enter the chamber. An energy delivery system may be provided within the chamber.

[00065] The reaction medium may include gas and/or liquid.

[00066] Reaction media include oxygen (O), oxides, hydrogen (H), boron (B), borides, carbon (C), carbides, nitrogen (N), nitrides, chlorine (Cl), chlorides , bromine (Br), bromide, fluorine (F), fluoride, iodine (I), iodide, silicon (Si), silicide, phosphorus (P), phosphide obtain.

[00067] The metal may comprise tungsten or any other suitable metal.

[00068] The energy delivery system modifies the chemical composition of the metal-containing layer such that at least one atom, ion or molecule in the reaction medium reacts with the metal to form a new chemical compound within at least one portion. can be configured to vary the

[00069] The energy delivery system may be further configured to deliver UV, DUV and/or EUV radiation to break chemical bonds in the reaction medium.

[00070] The apparatus may include a debris removal system for removing debris particles generated during modification from the surface of the layer. The debris removal system may include at least one of an electrical discharge, a gas and liquid flow, and a reaction medium for removing debris.

[00071] The apparatus may include a cooling system for contacting the substrate with gas and/or liquid to remove heat from the substrate. A cooling system may be configured to deliver gas and/or liquid to at least a portion of the layer modified by the energy delivery system.

[00072] The apparatus may include an auxiliary layer deposition system for depositing a layer on the substrate. The auxiliary layer deposition system may be configured to deposit protective layers, electrically insulating layers, BARCs and/or resists on substrates and/or layers comprising carbon or metal and/or other portions of substrates.

[00073] At least one portion of the opaque layer may be modified prior to deposition of the optional BARC and resist layers and patterning of the substrate in a litho tool.

[00074] The apparatus may include a layer deposition system. The layer deposition system may be operable to vary deposition conditions for creation of at least one seed sublayer within a layer, eg, a layer comprising carbon. The seed sublayer can include sp3-coordinated carbon that acts as a seed sublayer for nanodiamond nucleation and/or diamond-like carbon (DLC). The concentration of sp3-coordinated carbon atoms in the seed sublayer can be higher than in other sublayers.

[00075] The layer deposition system is configured such that an additional layer having a relatively elevated concentration of tetravalent carbon atoms with respect to the opaque carbon layer and having a thickness less than the layer can be provided as a seed sublayer. obtain.

[00076] A layer deposition system uses structural modification of a layer comprising a carbon layer to enhance the transparency of a lower portion of a layer deposited in a first deposition process, while the layer is modified after modification by a second deposition process. can be configured to provide an upper portion of the The first and second deposition processes (and optionally any further deposition processes) may be performed by the layer deposition system.

[00077] The apparatus may include a layer removal system for removing material from the substrate. The layer removal system may include a lithoetching system configured such that the material removed from the substrate corresponds to the location and size of the at least one feature. A layer removal system may include a chemical mechanical polishing (CMP) apparatus. A layer removal system may include an ablation system. A layer and/or material may be referred to as an auxiliary layer. The material may include layers comprising metal or carbon, any of which may be deposited on the substrate or may include any other portion of the substrate.

[00078] The layer removal system is configured to at least partially remove and/or planarize at least one of a protective layer on the substrate, an electrically insulating layer on the substrate, a BARC and/or resist on the substrate. obtain. A layer may comprise carbon or metal and/or may comprise carbon or metal modified in a layer comprising carbon or metal.

[00079] The apparatus may further include a feedback control system. A feedback control system may be configured to measure one or more parameters of at least one portion of the layer. A feedback control system may be configured to control the energy delivery system based on one or more parameters. The parameters may include at least one of dimensions, transparency, optical coefficients (eg, refraction coefficients or extinction coefficients), scattering, and the like.

[00080] The feedback control system may include a radiation sensor. A radiation sensor may be configured to receive radiation from at least one portion of the layer. A feedback control system may be configured to measure one or more parameters of at least one portion of the layer based on the received radiation. Received radiation may include reflected and/or scattered radiation produced by the energy delivery system.

[00081] A feedback control system may be configured to optimize the number and intensity of laser irradiation pulses and/or particle emissions by the energy delivery system. A feedback control system may be configured to stop and/or control phase conversion as needed.

[00082] A feedback control system may include a control unit. The control unit may be configured to measure one or more of the parameters. The control unit may be operable to control any other part of the device, such as the energy delivery system, radiation sensors, and the like. A feedback control system may be configured to adjust, control, or otherwise vary the energy delivery system to control modification of at least one portion. The feedback control system may be operable to receive a signal (eg, from a radiation sensor) indicating that at least one portion has been sufficiently modified (eg, rendered sufficiently transparent). The feedback control system may be operable to use the signal to determine whether to stop, continue, or change the modification of the at least one portion.

[00083] The feedback control system may be configured to allow at least one layer underlying the carbon-containing layer to remain relatively unaffected by the modification of the at least one portion. For example, the energy delivery system can be controlled to control the generation of regions of high pressure and/or high temperature in the layer after each laser and/or particle pulse. Each subsequent pulse can propagate deeper into the carbon-containing layer. Each modified layer of at least one portion may become more transparent with each pulse. The feedback control system may prevent at least one layer underlying the carbon-containing layer from being affected or substantially affected by the pulse.

[00084] The feedback control system may be configured such that at least one characteristic of the returned optical signal may be accounted for by at least one of the optical signal reflected, scattered and/or diffracted from the at least one feature, wherein The properties can be used to provide information about at least one layer of the substrate. Information such as polarization, wavelength, intensity, spectral intensity, interference pattern, etc. may be obtained from at least one parameter of at least one layer of the substrate, e.g. thickness, optical path length, refractive index 'n', extinction coefficient 'k', composition etc. can be used to characterize. The same radiation and/or particles used for at least one light source and/or modification may provide the optical signal and/or the return optical signal. The amplitude and/or polarization of the radiation and/or particles provided by the light source and/or energy delivery system can be attenuated and/or adjusted for use in metrology, which is used to measure substrate alignment. can be used. The size of the metrology illumination spot of the optical signal illuminating the at least one feature may substantially overlap the size of the modified portion of the layer or may closely fit the size of the modified portion.

[00085] The feedback control system is such that at least one characteristic of the optical signal propagating through the substrate in the region of the at least one portion to be modified is controlled by the at least one feature (e.g., due to backlighting of the feature or another illumination direction). in) can be used to determine whether there is sufficient illumination. The substrate may be illuminated (e.g., backlit) (e.g., with infrared or mid-infrared radiation (which may include wavelengths at which silicon is transparent)), which reveals the DLC/ This is to allow radiation to leak through at least one portion after the diamond phase has become sufficiently thick and/or if the residual opacity of the carbon-containing layer can be sufficiently reduced. The feedback control system may be configured to monitor the leakage of radiation (e.g., infrared or mid-infrared radiation, etc.) and the moment at which correction of at least one portion should be stopped (e.g., the amount of radiation leakage reaches a threshold level). , etc.).

[00086] The feedback control system may be configured to monitor plasma generation or other forms of radiation excitation by the energy delivery system. When plasma is generated or atoms/molecules are excited by at least one of the laser pulse and/or particles, optical spectroscopy or another technique may be used to detect the presence of the plasma or excitation, which is , for example, when a diamond phase or a DLC phase modifies a carbon-containing layer through its thickness.

[00087] A layer comprising carbon may attenuate or absorb radiation delivered from the energy delivery system (eg, in a laser pulse) and/or may absorb particles delivered from the energy delivery system. The radiation and/or particles may first modify the top surface of at least one portion of the layer. The top surface may include an upper sublayer of layers. By modifying the top sublayer, the transparency of the top sublayer to radiation and/or particles can be increased. Increasing the transparency of the top sublayer can reduce attenuation/absorption of radiation and/or particles, thereby providing more radiation and/or (e.g. in the form of subsequent laser or particle pulses). or when the particles are delivered, the radiation and/or particles propagate through the modified top sublayer to modify the bottom sublayer below the top sublayer to increase the transparency of at least one bottom sublayer. obtain. In one example, as each radiation and/or particle pulse modifies successive (e.g., lower) sublayers within a layer, subsequent pulses are allowed to propagate deeper into the layer, ultimately resulting in these The pulses are allowed to propagate completely through the layer (e.g., the entire thickness of the layer) such that these pulses (and/or optical signals) reach the layers of the substrate below the carbon-containing layer. be able to access. Modification of at least one portion of the layer (e.g., through the entire thickness of the layer) allows pulses from the energy delivery system to propagate through the modified layer comprising carbon with little attenuation. , thereby allowing excitation of at least one other chemical element or molecule (e.g. present in another layer and not present in the carbon-containing layer) of the substrate to be induced, thereby resulting in a characteristic different wavelengths or spectra of radiation can be induced, indicating that the modification of at least one portion is sufficient to allow the optical signal to propagate through at least one portion can be For example, radiation emitted during modification of the carbon-comprising layer and radiation emitted by at least one other element of the substrate, which is at least one radiation different from the radiation emitted during modification of the carbon-comprising layer. (which may include wavelength).

[00088] The feedback control system may be configured to characterize at least one property of the radiation reflected, scattered or diffracted by the at least one portion. The feedback control system may include at least one of a Raman detection system, a scanning electron microscope or any other instrument that measures properties of radiation reflected, scattered and/or diffracted by the feature. A Raman detection system may be configured to detect Raman signals and/or surface-enhanced Raman signals generated by the at least one portion, and these signals may be used to characterize the at least one portion. The Raman detection system can be configured to provide information regarding the ratio of sp2/sp3 coordinated carbon atoms (eg, in the top layer of the modified at least one portion). A scanning electron microscope or the like can be used to characterize at least one portion. By measuring the compression, indentation, etc. of the carbon-containing layer, it may be possible to determine what part of the thickness of the carbon-containing layer has undergone phase conversion.

[00089] The received radiation may include one or more of the following.

[00090] Radiation from the energy delivery system reflected or scattered from at least one portion of the layer, radiation propagated through at least one portion of the layer, the radiation source configured to back-illuminate the semiconductor device substrate. The radiation emitted from, the radiation from the energy delivery system and/or the particles directed to a spot substantially overlapping the radiation excited in the portion of the layer and the portion of the layer modified by the energy delivery system; Radiation from an auxiliary light source that is reflected and/or scattered from. The radiation source may define a further radiation source configured to back-illuminate the semiconductor device substrate. The radiation source may be configured to emit radiation and/or particles, which may be substantially transmitted through the substrate but substantially absorbed by the unmodified layer. A radiation source may include an auxiliary light source. The supplemental light source may include a backlight that illuminates the semiconductor substrate from behind.

[00091] The energy delivery system may be configured to emit radiation and/or particles to modify the transparency of at least one portion of the layer to a depth less than the entire thickness of the layer.

[00092] The apparatus may include a layer deposition system for depositing a layer on a substrate.

[00093] A layer deposition system may be configured to deposit a first sublayer of a layer onto a substrate. The energy delivery system may be operable to modify at least one portion of the first sublayer.

[00094] The layer deposition system may be configured to deposit a second sublayer of the layer over the first sublayer after modification of at least one portion of the first sublayer.

[00095] The layer deposition system may be operable to vary deposition conditions for the creation of at least one seed sublayer within the layer. The seed sublayer can include sp3-coordinated carbon that acts as a seed sublayer for nanodiamond nucleation and/or diamond-like carbon (DLC), and the like. The concentration of sp3-coordinated carbon atoms in the seed sublayer can be higher than in other sublayers.

[00096] The seed sublayer can be thinner than the total layer thickness, for example, more than 2 times, more than 10 times, or any other factor thinner than the total layer thickness.

[00097] The layer deposition system may be configured to deposit at least one seed sublayer on top of the layer. A layer deposition chamber or manufacturing method may be configured to convert the top portion of the carbon-containing layer into a seed sublayer, for example, by exposing the layer to energetic ions (of, for example, a noble gas). will be

[00098] A layer deposition system may be configured to subject a substrate to a series of processes. A layer deposition system can be configured to deposit a layer comprising carbon on a substrate, where the substrate can be 50-100% of the total thickness of the layer. It is understood that different thicknesses can be deposited prior to modification of the layer. The apparatus may be configured to modify at least one portion of a layer over some or all of the features in the substrate to reduce the extinction coefficient of at least one portion. The device may be configured such that the area of at least one portion is 0.1 to 10 times the area of the corresponding feature and may substantially overlap the corresponding feature. The device may be configured to modify only a portion of the thickness of the device such that the thickness of the layer with reduced extinction coefficient may be less than or equal to the thickness of the initial layer.

[00099] The layer deposition system and/or fabrication process is adapted to perform a chemical mechanical polishing (CMP) step (e.g., using a chemical mechanical polishing apparatus, etc.) for planarization and/or debris particle removal. (debris particles may originate from the surface of the substrate as a result of an ablation plume, etc.). A layer deposition system may be configured to apply a removable layer (eg, by spin coating, etc.) prior to modification of at least one portion. The removable layer may be removed (e.g., by washing, etc.) to remove deposited debris particles, e.g., once at least one feature in the substrate is visible after at least one portion is modified. can be done.

[000100] CMP may be performed to reduce or eliminate ripples if ripples are formed in the surface of the substrate and/or if ripples are formed at the edge of at least one modified portion. . Alternatively or additionally, CMP may be performed to remove debris particles.

[000101] The layer deposition system may be configured to deposit the remaining portion of the entire thickness of the layer, which may occur, for example, after modification of at least one portion. For example, 0-50% of the total layer thickness or any other percentage range may be deposited depending on the initial thickness deposited.

[000102] The layer deposition system may be configured to deposit at least one of a bottom antireflective coating (BARC), a resist, and any other layers on a substrate. Layer deposition systems may be configured such that BARC and/or resist deposition may be relatively uniform or planar. DLC/diamond and amorphous carbon wetting may vary with BARC and/or resist. Depositing a layer such as amorphous carbon, eg, a relatively thin layer that may allow the optical signal to penetrate the relatively thin layer, may reduce variations in wetting properties such as BARC and/or resist.

[000103] The layer deposition system may be configured to deposit the carbon-containing layer such that the unmodified portion of the layer may be above or below at least one modified portion of the layer, whereby at least one A layer with two modified portions may be closer to the top surface of the layer or closer to the bottom surface of the layer (eg, may be in contact with the bottom layer of the substrate). Providing an unmodified layer below the modified portion may ensure that a user-specified ashing recipe can be used for the layer.

[000104] The apparatus may include a debris removal system for removing debris particles generated during modification from the surface of the layer.

[000105] Debris particle deposition on the surface of the substrate may be reduced or eliminated by modifying the layer under vacuum or low pressure. Examples of pressure conditions to reduce or eliminate debris particle deposition are described in Harilal et al. "Background gas collisional effects on expanding fs and ns laser ablation plumes", Appl. Phys. A, Vol. 117(1), pp. 319-326 (2014).

[000106] The debris removal system may include a radiation source, such as a laser, that emits radiation to irradiate debris particles formed within the ablation plume during modification of at least one portion of the layer, thereby reducing The size of debris particles and/or the number of debris particles is reduced.

[000107] The debris removal system may be configured to irradiate the ablation plume with at least one laser pulse (eg, in the form of an after-pulse, etc.). The laser pulse can be lower in energy and/or peak fluence than the radiation and/or particles for modifying the at least one portion. Laser pulses may be less than 10 ns in duration, less than 0.1 ns in duration, or any other suitable pulse duration. The laser pulses may be configured to follow each or some of the at least one portion modifying pulses, for example, may be configured to follow with a delay of less than 10 μs, less than 1 μs or any other suitable delay. The afterpulse can be effectively absorbed by particles within the ablation plasma plume, whereby the particles can evaporate or at least reduce their size to less than 100 nm or much smaller than 100 nm, thereby allowing the particles to reach the substrate. If left on, it will not be imaged or reduce yield.

[000108] The debris removal system may include a discharger that generates a plasma above at least one portion of the layer during modification of the at least one portion of the layer. The plasma may be configured to trap charged particles (eg, charged particles may be generated and/or charged within the ablation plume, which may prevent their redeposition). Alternatively or additionally, the apparatus may be configured to bias the substrate comprising the layer such that the electric field may repel charged particles generated in the ablation plume from the substrate and/or redeposit the charged particles. can prevent

[000109] Maintaining the discharge above the layer being modified can be done so that moderate temperature ions can be generated. For example, ions such as titanium ions may be generated at energies less than 100 eV, optionally less than 10 eV. Particles generated within the ablation plasma plume may generally be negatively charged, which can result in negative particles being held in the plasma's positive potential and their substrate can prevent the redeposition of

[000110] The debris removal system may be configured to tilt the semiconductor device substrate so that debris particles may be dislodged from the layer under gravity or some other external force or pressure. The substrate may tilt during modification of at least one portion such that gravity may force debris particles away from the layer.

[000111] The debris removal system may be configured to apply the removable layer to the surface of the layer, and the debris particles may collect on the removable layer. The debris removal system may be further configured to remove the removable layer after modifying at least one portion of the layer.

[000112] The debris removal system may be configured to remove the removable layer at the location of at least one portion of the layer before the energy delivery system emits radiation and/or particles.

[000113] The debris removal system may be configured to provide a reaction medium proximate to at least one portion of the layer, e.g., whereby only the products of reaction of materials within the ablation plume are substantially volatile or soluble. could be. The reaction medium can be gas or liquid. The reaction medium may be transparent to radiation and/or particles. Activation energy can be provided by the high temperature within the plume and/or by direct photoexcitation by radiation and/or particles. The reaction medium may be configured to convert vapors or particles within the plasma plume to volatile or soluble forms, which may then be removed by diffusion and/or flow.

[000114] The modification of at least one portion may be performed in the reaction medium. The reaction medium can include at least one of oxygen, hydrogen, halogen, air, water vapor, liquid water, _CO2 (eg, gas or liquid), and the like. The reaction medium may be configured to convert to volatile or soluble oxides, halogen compounds, etc., to eliminate debris particles that may occur within the ablation plume, for example. Debris particles may react with the reaction medium within the ablation plume, which may be in gaseous or liquid form, and may form volatile or soluble particles/molecules that may be removed by flow and/or diffusion. Debris particles may be condensed from dense vapor or produced in liquid form and/or may contain carbon, tungsten, boron, nitrogen and/or any other element.

[000115] The apparatus may further include a chamber configured to hold a liquid or gas. A semiconductor device substrate may be at least partially immersed in a liquid or gas during irradiation of radiation and/or particles by the energy delivery system.

[000116] Modification of at least one portion may be performed in a liquid (eg, water, alcohol, liquid carbon dioxide, perfluorinated fluid, heat transfer fluid, etc.). The substrate may be at least partially submerged within the bath and/or a liquid film may be applied to the surface of the substrate (eg, this may include condensation, etc.).

[000117] Performing the modification in the liquid may allow the thermal stress on the wafer to be reduced. The liquid may act as a heat sink by conduction and/or evaporation and/or separation. The liquid is operable to improve quenching (eg carbon can be heated to about 4000-5000° C. or any other potential or suitable temperature for it) and a diamond or DLC phase. can be rapidly cooled to retain the

[000118] Modification of at least one portion of the substrate immersed in the liquid may be performed to reduce or prevent separation of carbon (and other elements, for example) due to Coulombic explosion and/or vaporization processes, which may include: It can be useful in maintaining layer resistance to subsequent etching steps or in maintaining layer thickness (e.g., by minimizing the difference between modified and unmodified portions in the layer). Yes, which allows the need to perform a planarization step and/or reduces wetting/distribution variability during the BARC and/or resist application step.

[000119] The apparatus may include a liquid film applicator configured to apply a liquid film to the surface of the layer before the energy delivery system emits radiation and/or particles.

[000120] The apparatus may include an optical system configured to transmit an optical signal through at least one portion of the layer to measure information associated with the at least one feature.

[000121] The optical system may include any suitable metrology instrument for measuring information related to at least one feature. The optical system may be configured to receive optical signals reflected, scattered and/or diffracted from at least one feature such that information associated with the at least one feature can be measured. The optical system may be configured to provide an optical signal propagating through the modified at least one portion.

[000122] The apparatus may include a substrate alignment system that measures information related to at least one feature based on the return optical signal received through at least one portion of the layer.

[000123] At least one feature may be illuminated with an optical signal, and the optical signal may initially propagate through the at least one portion. The optical signal may interact with (reflected, scattered and/or diffracted from) at least one feature to form a return optical signal, which may then propagate through the at least one portion. can. At least one feature may be illuminated with an optical signal, and the optical signal may not initially propagate through the at least one portion. For example, at least one feature may be illuminated by optical signals arriving from at least one different direction such that the optical signal cannot first pass through the at least one portion. A return optical signal can then propagate through the at least one portion.

[000124] A substrate alignment system may be configured to measure at least one of the presence, position, orientation, etc. of at least one feature to determine whether the substrate is aligned.

[000125] A substrate alignment system may be configured to control a relative positioning between a substrate and a lithographic apparatus or tool to align the substrate therein.

[000126] The optical system and/or substrate alignment system may include any suitable metrology for measuring and/or analyzing information obtained from at least one feature. Examples of techniques for measuring information associated with at least one feature include using a Smart Alignment Sensor Hybrid (SMASH) system as provided by the assignee of the present disclosure and/or It may include at least one of phase grating alignment techniques as provided, and/or interferometry techniques that measure information using a return optical signal from at least one feature. The SMASH system determines that the full extent of at least one feature is visible (eg, if the area of the modified portion is smaller than the area of the corresponding feature) and/or is sufficiently illuminated by the light signal. Information can be measured without need. A SMASH system may be operable in the visible spectral range and/or the infrared spectral range. The wavelength used in the SMASH system or any other instrument may be a wavelength that at least partially penetrates the carbon-containing layer, such as when a portion of the layer obscures at least one feature. can be If the layer is not completely modified over its entire thickness or if the modification is incomplete and the modified layer thickness is less than its total thickness and/or if any other layer Appropriate selection of the wavelength can allow the informational optical signal generated by the SMASH system or any other suitable instrument to penetrate the layer, even when deposited on top.

[000127] The features may include alignment marks or overlay marks or the like.

[000128] The modified layer may comprise at least 20% carbon, or optionally at least 50% carbon.

[000129] An energy delivery system that phase-changes a carbon-containing layer can, in principle, alter (eg, locally) the chemical composition of an opaque metal layer to enhance its optical transparency. The availability of reagents (eg, reaction medium in contact with at least a portion of the metal-containing layer) can affect changes in chemical composition.

[000130] The optimal properties of the energy delivery system for localized chemical transformation of the metal layer may differ from those for structural modification of the carbon layer. However, there may be some similarity between the parameters used. For example, energy (eg, laser) pulse durations of the energy delivery system significantly less than 1 ns and fluences in the range of 0.01-1 J/cm ² can be used to modify metal layers, which parameters can lead to high temperatures and/or high pressures. The energy delivery system can be configured to catalyze the formation of oxides, borides, nitrides, etc. (e.g., to form metal oxides, metal borides, metal nitrides, etc.), groups and metals can promote interdiffusion of newly formed substances or compositions. As described herein, chemically altered metal through a metal layer in the same or similar manner as can occur when a phase changed material (e.g., diamond, DLC, etc.) propagates through a carbon layer can occur.

[000131] Accordingly, the apparatus and methods described herein that are suitable for localized structural alterations of carbon layers may also be applicable, at least in part, to localized chemical alterations of metal layers.

[000132] As an alternative or addition to providing an energy delivery system capable of providing a focused energy beam, the energy delivery system may be configured to perform electrochemical conversion of metals, such as metal oxides, Relatively deep (eg, up to several μm, etc.) conversion of metal nitrides, metal borides, etc. can result. The local nature of the transformation may depend on the preceding deposition/litho-etching of an insulating layer (which may prevent contact between the reagent and the metal layer in areas different from the buried features in the substrate) and/or focused energy beams. by catalyzing an electrochemical conversion by the delivery system of Such systems can increase the rate of metal conversion (e.g., above buried features) by a factor of approximately 10-1000, whereby locally converted layers can be enhanced in transparency. , other parts of the layer, which may be subjected to relatively slow pure electrochemical anodization, may be only slightly affected (changes in their transparency over the same timeframe are minimal or negligible). is possible). The anodized layer (which may be relatively thin) is removable such as by CMP.

[000133] According to an example of the disclosure, there is provided a lithographic apparatus comprising an apparatus of any example of the disclosure.

[000134] According to an example of the present disclosure, a lithography tool is provided that includes an apparatus of any example of the present disclosure.

[000135] According to one example of the present disclosure, a method is provided for measuring information associated with at least one feature in a semiconductor device substrate. The at least one feature may be at least partially obscured by the carbon-containing layer such that optical signals for measuring information associated with the at least one feature may be prevented from reaching the feature. The at least one feature may be at least partially obscured by the layer comprising metal such that optical signals for measuring information related to the at least one feature may be prevented from reaching the feature. The method can include modifying at least one portion of the layer with the energy delivery system to increase the transparency of at least one portion. At least one portion of the layer may be opaque, and the modification may increase the transparency of at least one portion by causing a phase change and/or a chemical composition change of the at least one portion. Modifying at least one portion causes at least a portion of the optical signal to measure information related to the at least one feature to be at least one portion of the layer to measure information related to the at least one feature. can be such that it can propagate through

[000136] The method may include emitting a beam to modify at least one portion of the layer using the energy delivery system, the modification comprising (e.g., sp3-coordinated carbon atoms reducing the extinction coefficient of at least one portion of the layer (by changing the valence state of some of the carbon atoms in the layer) by increasing the content and/or reducing the content of sp2-coordinated carbon atoms It is done by

[000137] The beam may include radiation and/or particles.

[000138] The method uses an energy delivery system to induce a phase change in carbon (e.g., in at least one portion of the layer) and/or sp3-coordinated carbon atoms (e.g., , tetravalent carbon atoms) to modify at least one portion of the layer.

[000139] The method may include modifying the carbon in at least one portion of the layer such that the carbon forms at least one of diamond and diamond-like carbon.

[000140] The method uses an energy delivery system to reduce the extinction and/or refraction coefficients to reduce or eliminate the concentration and total number of electrons in the conduction band, thereby causing local chemical composition changes. causing to modify at least one portion of the layer. The energy delivery system may be configured to emit beams of radiation and/or particles. Alternatively or additionally, the energy delivery system may include an anodization system that causes a local chemical composition change to modify at least one portion of the layer.

[000141] The method may include emitting radiation and/or particles using at least one laser. The method may comprise using at least one laser that emits radiation and/or at least one source of a focused beam of energetic particles.

[000142] The method may include emitting a series of laser pulses using a pulsed laser source.

[000143] The method may include emitting radiation having at least one wavelength in the range of 4 nm to 3 μm.

[000144] The method uses at least one laser to generate visible and/or infrared laser pulses with pulse durations ranging from 5 fs to 500 ps, ultraviolet laser pulses with pulse durations ranging from 1 ps to 500 ns, It may involve emitting one or more such as soft X-ray to DUV laser pulses with pulse durations ranging from 1 fs to 100 ns.

[000145] The method may include emitting an initial pulse train including at least one laser pulse of a first pulse duration using at least one laser. The method may further include emitting a next pulse train including at least one laser pulse of a second, shorter pulse duration.

[000146] The method may include emitting radiation having a peak emission fluence or intensity below the ablation threshold of the layer using at least one laser.

[000147] The method may comprise emitting radiation and/or particles having at least one of linearly polarized radiation, non-linearly polarized radiation, elliptically polarized radiation and helically polarized radiation using at least one laser.

[000148] The method uses at least one laser, wherein several pulses in a sequence and/or train of laser pulses each laser pulse has one of a linear polarization, a circular polarization, an elliptical polarization, and a helical polarization. It may involve emitting a sequence of laser pulses having a different polarization than other pulses in the train.

[000149] The method may comprise emitting radiation and/or particles for pulsed heating of at least one portion of the layer with the energy delivery system.

[000150] A method uses an energy delivery system to generate beams including electron beams, ion beams, neutral beams, extreme ultraviolet (EUV) beams in the range of 5-20 nm, and radiation having wavelengths in the range of 20-100 nm. can include radiating one or more of The beam may contain radiation and/or particles.

[000151] The method may include emitting radiation and/or particles to modify at least one portion of the metal-comprising layer.

[000152] The method includes adding at least one portion of a layer comprising a metal in the presence of a reaction medium to chemically transform at least one portion of the layer to change the chemical composition of the at least one portion. can include modifying. The reaction medium may include gas and/or liquid, which may be sufficiently transparent to the beam of the energy delivery system.

[000153] The energy delivery system may include a laser configured to emit pulses having a duration of less than 100 ns, optionally less than 10 ns, optionally greater than 10 fs.

[000154] The laser may be configured to deliver a plurality of pulses, optionally the pulse repetition rate may be at least 1 kHz, optionally the pulse repetition rate may be at least 1 MHz, And/or optionally, the pulse duty cycle may be less than 1%.

[000155] The laser may be configured to emit radiation having a fluence in the range of 0.01-1 J/ ^cm2 .

[000156] The energy delivery system is configured to provide an ion beam for saturating the metal-comprising layer with other atoms, ions or molecules to enhance the transparency of at least one portion of the metal-comprising layer. obtain.

[000157] The method may employ laser irradiation for modification of at least one portion, wherein the laser irradiation irradiates the at least one portion with a total fluence greater than 0.01 J/ ^cm2 and/or pulsed It may be replaced by or accompanied by localized exposure to a continuous wave and/or pulsed ion beam or plasma of duration less than 10 ns. Ions implanted by localized exposure may exit hot tracks, where pulsed heating and quenching may occur such that diamond-phase and/or DLC-phase carbon can be produced. The ion beam energy may be greater than 1 eV, optionally greater than 100 eV. The ions used may include C ions and/or at least one of B, N, O, Ga, He, Ne, Ar, Kr, Xe, and the like. Methods may include using one or more noble gas ions, which may facilitate outgassing and leave the layer free of additional dopants.

[000158] The method may include connecting an electrical connection to the layer, the electrical connection configured to provide a voltage/current or ground connection to prevent charging of the layer. For example, if ions or electrons are induced in a substrate as part of an energy delivery system, the method may include connecting the carbon-containing layer to a voltage/current source or grounding, which may include: This is to prevent charging effects that can defocus or deflect a focused charged particle beam incident on the layer. This deflection effect may occur if the original (eg, high extinction coefficient) layer is a conductor.

[000159] The method may include using one or more noble gas ions to facilitate outgassing to leave the layer free of additional dopants. The method may include directing ions or electrons to the substrate.

[000160] The energy delivery system may include an anodization system configured to provide an electric field potential between a layer comprising a metal and an electrode that generates an electric field. The method can include chemically transforming at least one portion of the layer to provide a reaction medium for changing the chemical composition of the at least one portion.

[000161] The method may include depositing a protective layer and/or a clearout protective layer on the layer around at least one portion of the layer. Depositing the protective layer and/or the clearout protective layer can be performed using the same apparatus or separate apparatus prior to anodization.

[000162] The method may include providing a conductive liquid between at least one portion of the metal-containing layer and the electrode with a liquid application system.

[000163] The method may include supporting the substrate with the substrate support such that at least a portion of the substrate does not contact the conductive liquid. Alternatively or additionally, the method may include applying an insulating layer to at least a portion of the substrate to prevent contact between the portion of the substrate and the conductive liquid with an insulating layer applicator. The method may include removing the insulating layer (eg, after completing the anodization process).

[000164] The method may include connecting an energy source to the metal layer and the electrode to generate an electric field between the metal layer and the electrode. The energy source may be configured to provide continuous and/or pulsed voltage and/or current.

[000165] The energy source may include a voltage source electrically connected to the metal layer and the electrode having a polarity such that the metal layer forms the anode and the electrode forms the cathode.

[000166] The method may include performing electrochemical and/or photoelectrochemical anodization to modify at least one portion of the metal-comprising layer.

[000167] The method may include defining at least one portion in a prior litho-etching process through an opening in a protective layer provided or formed over the metal-containing layer.

[000168] At least one portion may be defined by a focused beam of the energy delivery system.

[000169] The method chemically, electrochemically and/or photoelectrochemically converts at least one portion of the layer to change the chemical composition of the at least one portion in the presence of a reaction medium. , modifying at least one portion of the metal-containing layer.

[000170] The method may include providing a chamber containing the reaction medium.

[000171] The chamber may be configured to allow radiation and/or particles to interact with the metal-containing layer. The chamber may include transparent sections that allow radiation and/or particles to enter the chamber. An energy delivery system may be provided within the chamber.

[000172] The reaction medium may include gas and/or liquid.

[000173] Reaction media include oxygen (O), oxides, hydrogen (H), boron (B), borides, carbon (C), carbides, nitrogen (N), nitrides, chlorine (Cl), chlorides , bromine (Br), bromide, fluorine (F), fluoride, iodine (I), iodide, silicon (Si), silicide, phosphorus (P), phosphide obtain.

[000174] The metal may comprise tungsten or any other suitable metal.

[000175] The method changes the chemical composition of the metal-containing layer such that at least one atom, ion or molecule in the reaction medium reacts with the metal to form a new chemical compound within the at least one portion. can include allowing

[000176] The method may include delivering UV, DUV and/or EUV radiation to break chemical bonds in the reaction medium.

[000177] The method may include providing a debris removal system for removing debris particles generated during modification from the surface of the layer. The debris removal system may include at least one of an electrical discharge, a gas and liquid flow, and a reaction medium for removing debris.

[000178] The method may include contacting the substrate with a gas and/or liquid to provide a cooling system for removing heat from the substrate. A cooling system may be configured to deliver gas and/or liquid to at least a portion of the layer modified by the energy delivery system.

[000179] The method may include providing an auxiliary layer deposition system to deposit a layer on the substrate. The auxiliary layer deposition system may be configured to deposit protective layers, electrically insulating layers, BARCs and/or resists on substrates and/or layers comprising carbon or metal and/or other portions of substrates.

[000180] The method may include modifying at least one portion of the opaque layer prior to depositing the optional BARC and resist layers and patterning the substrate in the litho-tool.

[000181] The method may include providing a layer deposition system. The layer deposition system may be operable to vary deposition conditions for creation of at least one seed sublayer within a layer, eg, a layer comprising carbon. The seed sublayer can include sp3-coordinated carbon that acts as a seed sublayer for nanodiamond nucleation and/or diamond-like carbon (DLC). The concentration of sp3-coordinated carbon atoms in the seed sublayer can be higher than in other sublayers.

[000182] The method may include providing an additional layer having an elevated concentration of tetravalent carbon atoms relative to the opaque carbon layer and having a thickness less than the layer to act as a seed sublayer. .

[000183] The method may include depositing a lower portion of the layer in a first deposition process and depositing an upper portion of the layer in a second deposition process using the layer deposition system. The layer deposition system uses structural modification of the carbon-containing layer to enhance the transparency of the lower portion of the layer deposited in the first deposition process, while the upper portion of the layer after modification by the second deposition process. can be configured to be provided. The first and second deposition processes (and optionally any further deposition processes) may be performed by the layer deposition system.

[000184] The method may include removing material from the substrate with a layer removal system. The layer removal system may include a lithoetching system configured such that the material removed from the substrate corresponds to the location and size of the at least one feature. A layer removal system may include a chemical mechanical polishing (CMP) apparatus. A layer removal system may include an ablation system. A layer and/or material may be referred to as an auxiliary layer. The material may include layers comprising metal or carbon, any of which may be deposited on the substrate or may include any other portion of the substrate.

[000185] The layer removal system is configured to at least partially remove and/or planarize at least one of a protective layer on the substrate, an electrically insulating layer on the substrate, a BARC and/or resist on the substrate. obtain. A layer may comprise carbon or metal and/or may comprise carbon or metal modified in a layer comprising carbon or metal.

[000186] The method may include providing a current or bias voltage source or grounding the carbon-containing layer to avoid charge build-up caused by the charged particle beam.

[000187] The method includes using a feedback control system configured to measure one or more parameters of at least one portion of the layer and control an energy delivery system based on the one or more parameters. can contain.

[000188] The method may include receiving radiation from at least one portion of the layer using a radiation sensor of the feedback control system. The method may include measuring one or more parameters of at least one portion of the layer based on received radiation using a feedback control system.

[000189] The radiation received may include one or more of the following.

[000190] Radiation from the energy delivery system reflected or scattered from at least one portion of the layer, radiation propagated through at least one portion of the layer, the radiation source configured to back-illuminate the semiconductor device substrate. The radiation emitted from, the radiation from the energy delivery system and/or the particles directed to a spot substantially overlapping the radiation excited in the portion of the layer and the portion of the layer modified by the energy delivery system; Radiation from an auxiliary light source that is reflected and/or scattered from.

[000191] The method may include emitting radiation and/or particles to modify the transparency of at least one portion of the layer to a depth less than the entire thickness of the layer using the energy delivery system.

[000192] The method may include using a layer deposition system to deposit a layer on the substrate.

[000193] The method may include depositing a first sublayer of the layer on the substrate using the layer deposition system. The method may include modifying at least one portion in the first sublayer using the energy delivery system.

[000194] The method may include depositing a second sublayer of the layer over the first sublayer after modifying at least one portion of the first sublayer using the layer deposition system. Any number of sublayers can be deposited using the layer deposition system. Each sublayer may have any suitable composition, such as dopants, impurities, other forms of carbon, and the like.

[000195] The method may include varying deposition conditions to create at least one seed sublayer within the layer using the layer deposition system. The seed sublayer may include (eg, enriched) sp3-coordinated carbon that acts as a seed sublayer for nanodiamond nucleation and/or diamond-like carbon (DLC), and the like.

[000196] The method may include depositing at least one seed sublayer on top of the layer using the layer deposition system. The method may include means for transforming a portion of the top layer into a seed sublayer.

[000197] The method may include removing debris particles generated during modification from the surface of the layer using a debris removal system.

[000198] Using the debris removal system includes emitting radiation using a radiation source to irradiate debris particles formed within the ablation plume during modification of at least one portion of the layer, and reducing the size of debris particles and/or the number of debris particles.

[000199] The method may include generating a plasma above at least one portion of the layer during modification of the at least one portion of the layer using an electrical discharge (eg, generated by a discharger). The plasma may be configured to trap particles (eg, particles may be generated and/or charged within the ablation plume, which may prevent their redeposition). Alternatively or additionally, the method biases the substrate containing the layer such that the electric field can repel charged particles generated in the ablation plume from the substrate and/or prevent redeposition of the charged particles. to obtain.

[000200] The method may include tilting the semiconductor device substrate using the debris removal system so that debris particles may be separated from the layer under gravity.

[000201] The method may include applying a removable layer to a surface of the layer using a debris removal system. Debris particles may be collected on the removable layer. The method may include removing the removable layer after modifying at least one portion of the layer using the debris removal system.

[000202] The method may include using the debris removal system to remove the removable layer at the location of at least one portion of the layer before the energy delivery system emits radiation and/or particles.

[000203] The method may include providing a reaction medium proximate at least one portion of the layer using the debris removal system, e.g., whereby substantially only products of reaction of materials within the ablation plume are removed. It can be volatile or soluble. The reaction medium can be gas or liquid. The reaction medium may be transparent to radiation and/or particles. Activation energy can be provided by the high temperature within the plume and/or by direct photoexcitation by radiation and/or particles. The reaction medium can convert vapors or particles within the plasma plume to volatile or soluble forms, which can then be removed by diffusion and/or flow.

[000204] The method may include providing a chamber configured to hold a liquid and at least partially immersing the semiconductor device substrate in the liquid during radiation and/or particle emission by the energy delivery system. .

[000205] The method may include using a liquid film applicator to apply a liquid film to the surface of the layer before the energy delivery system emits radiation and/or particles.

[000206] The method may include sending an optical signal through at least one portion of the layer to measure information associated with the at least one feature using an optical system.

[000207] The method may include measuring information related to at least one feature based on a return optical signal received through at least one portion of the layer using the substrate alignment system.

[000208] The method may include measuring at least one of presence, position and orientation of at least one feature to determine whether the substrate is aligned using the substrate alignment system.

[000209] The method may include using a substrate alignment system to control a relative positioning between the substrate and a lithographic apparatus or tool to align the substrate therein.

[000210] According to one example of the present disclosure, a computer program is provided. The computer program may include instructions that, when executed on at least one processor, cause the at least one processor to control an apparatus to perform a method according to any example of this disclosure.

[000211] According to one example of the present disclosure, a carrier is provided. A carrier may carry the computer program of any example of this disclosure. A carrier can be one of an electronic signal, an optical signal, a wireless signal, a non-transitory computer-readable storage medium, and the like.

[000212] At least one feature of any example, aspect or embodiment of this disclosure may replace any corresponding feature of any example, aspect or embodiment of this disclosure. At least one feature of any example, aspect or embodiment of the disclosure may be combined with any other example, aspect or embodiment of the disclosure.

[000213] Embodiments of the disclosure are described below, by way of example only, with reference to the accompanying schematic drawings.

[000214] Fig. 2 depicts a schematic overview of a lithographic apparatus; [000215] Fig. 3 depicts a schematic overview of a lithographic cell; [000216] Fig. 3 depicts a schematic view of a portion of a substrate including alignment marks to aid in alignment of layers within the substrate. [000217] FIG. 11 depicts a schematic view of a portion of a substrate during various steps of a process of measuring information related to at least one feature on the substrate, according to an example of the present disclosure. [000217] FIG. 11 depicts a schematic view of a portion of a substrate during various steps of a process of measuring information related to at least one feature on the substrate, according to an example of the present disclosure. [000217] FIG. 11 depicts a schematic view of a portion of a substrate during various steps of a process of measuring information related to at least one feature on the substrate, according to an example of the present disclosure. [000218] Fig. 13 depicts a schematic overview of an energy delivery system according to an example of the present disclosure; [000219] Fig. 2 depicts a schematic overview of a substrate alignment system according to an example of the present disclosure; [000220] Fig. 10 depicts a schematic overview of an apparatus for measuring information associated with at least one feature in a substrate, according to an example of the present disclosure; [000221] Fig. 12 depicts a schematic overview of a debris removal system for removing debris particles from a surface, according to an example of the present disclosure; [000222] FIG. 11 depicts a schematic overview of a layer deposition system for depositing at least one layer on a substrate, according to an example of the present disclosure. [000223] Fig. 11 depicts a schematic overview of part of a method for measuring information associated with at least one feature in a substrate, according to an example of the present disclosure; [000224] Fig. 11 shows a schematic overview of a feedback controller; [000225] FIG. 13 depicts a schematic overview of a system for modifying a substrate and measuring information related to at least one feature in the substrate, according to an example of the present disclosure. [000226] FIG. 13 depicts a schematic representation of the steps of an example process for modifying a substrate using the system shown in FIG. [000226] FIG. 13 depicts a schematic representation of the steps of an example process for modifying a substrate using the system shown in FIG. [000226] FIG. 13 depicts a schematic representation of the steps of an example process for modifying a substrate using the system shown in FIG. [000226] FIG. 13 depicts a schematic representation of the steps of an example process for modifying a substrate using the system shown in FIG. [000226] FIG. 13 depicts a schematic representation of the steps of an example process for modifying a substrate using the system shown in FIG. [000227] FIG. 11 depicts a schematic overview of a system for modifying a substrate and measuring information related to at least one feature in the substrate, according to one example of the present disclosure. [000228] FIG. 15 depicts a schematic representation of the steps of an example process for modifying a substrate using the system shown in FIG. [000228] FIG. 15 depicts a schematic representation of the steps of an example process for modifying a substrate using the system shown in FIG. [000228] FIG. 15 depicts a schematic representation of the steps of an example process for modifying a substrate using the system shown in FIG. [000228] FIG. 15 depicts a schematic representation of the steps of an example process for modifying a substrate using the system shown in FIG. [000228] FIG. 15 depicts a schematic representation of the steps of an example process for modifying a substrate using the system shown in FIG. [000228] FIG. 15 depicts a schematic representation of the steps of an example process for modifying a substrate using the system shown in FIG. [000228] FIG. 15 depicts a schematic representation of the steps of an example process for modifying a substrate using the system shown in FIG.

[000229] As used herein, the terms "radiation" and "beam" are used to encompass all types of electromagnetic radiation, including ultraviolet radiation (e.g., 365, 248, 193, 157 or 126 nm), EUV (eg, extreme ultraviolet with wavelengths in the range of about 5-100 nm).

[000230] The terms "reticle", "mask" or "patterning device" as used herein, unless otherwise specified, refer to a patterned cross section corresponding to the pattern to be created on a target portion of a substrate. , may be broadly interpreted to mean a general patterning device that can be used to provide an incoming radiation beam, and the term "light valve" may also be used in this context. In addition to classical masks (transmissive or reflective masks; binary masks, phase-shift masks, hybrid masks, etc.), other examples of such patterning devices include the following.
- Programmable mirror array. Details of such mirror arrays are provided in US Pat. Nos. 5,296,891 and 5,523,193, incorporated herein by reference.
- Programmable LCD array. An example of such a structure is shown in US Pat. No. 5,229,872, incorporated herein by reference.

[000231] Figure 1 schematically depicts a lithographic apparatus LA. The lithographic apparatus LA comprises an illumination system IL (also called an illuminator) configured to condition a radiation beam B (e.g. UV, DUV or EUV radiation), and a patterning device (e.g. mask) MA. a support structure (e.g. mask table) MT connected to a first positioner PM configured to accurately position the patterning device MA according to certain parameters, and a substrate (e.g. a resist-coated wafer) constructed in A substrate table (e.g. wafer table) WT connected to a second positioner PW constructed to hold W and configured to accurately position the substrate according to certain parameters, and the patterning device MA. a projection system (eg a refractive projection lens system) PS configured to project a pattern imparted to the beam B onto a target portion C (eg comprising one or more dies) of the substrate W;

[000232] In operation, illuminator IL receives a beam of radiation from source SO (eg, via beam delivery system BD). The illumination system IL may include various types of optical components for directing, shaping and controlling radiation, such as refractive, reflective, magnetic, electromagnetic, electrostatic or other types of optical components or these. any combination of The illuminator IL may be used to condition the beam of radiation B so that it has the desired spatial and angular intensity distribution in its cross-section in the plane of the patterning device MA.

[000233] As used herein, the term "projection system" PS should be interpreted broadly to encompass various types of projection systems. Such systems include refractive, reflective and catadioptric systems as required by the exposure radiation being used or as required by other factors (e.g. use of immersion liquid or use of vacuum). , anamorphic, magnetic, electromagnetic and electro-optical systems or any combination thereof. Any use of the term "projection lens" herein may be considered synonymous with the more general term "projection system" PS.

[000234] The lithographic apparatus may be of a type in which at least a portion of the substrate may be covered with a liquid with a relatively high refractive index (e.g. water) so as to fill the space between the projection system and the substrate. , also called immersion lithography. Details of immersion techniques are provided in US Pat. No. 6,952,253 and WO 99-49504, which are incorporated herein by reference.

[000235] The lithographic apparatus LA may be of a type having two (dual stage) or more substrate tables WT, eg of a type having two or more support structures MT (not shown). In such a "multi-stage" machine, additional tables/structures may be used in parallel, i.e. while one or more tables are used to expose the design layout of the patterning device MA onto the substrate W. , preparation steps may be performed in one or more other tables.

[000236] In operation, the radiation beam B is incident on the patterning device (eg mask MA), which is held on the support structure (eg mask table MT), and is patterned by the patterning device MA. After traversing the mask MA, the radiation beam B passes through the projection system PS, which focuses the beam onto a target portion C of the substrate W. FIG. With the aid of a second positioner PW and a position sensor IF (e.g. an interferometric device, a linear encoder, a 2D encoder or a capacitive sensor) the substrate table WT can be moved precisely, e.g. It can be precisely moved to position a plurality of target portions C. Similarly, a first positioner PM and possibly another position sensor (which is not explicitly shown in FIG. 1) are used to accurately position the mask MA with respect to the path of the radiation beam B. obtain. Mask MA and substrate W may be aligned using mask alignment marks M1, M2 and substrate alignment marks P1, P2. Although the substrate alignment marks as illustrated occupy dedicated target portions, they may be located in spaces between target portions (these are called scribe-lane alignment marks).

[000237] As shown in Figure 2, the lithographic apparatus LA may form part of a lithographic cell LC (sometimes referred to as a lithocell or (litho)cluster), which exposes a substrate W to a Apparatus for performing pre- and post-exposure processes is also often included. Conventionally, such devices include a spin coater SC for depositing a resist layer, a developer DE for developing the exposed resist, a cooling plate CH and a bake plate BK (which, for example, regulate the temperature of the substrate W, which is , for example, to adjust the solvent in the resist layer). A substrate handler (or robot) RO picks up substrates W from input/output ports I/O1, I/O2, moves them between the various process apparatus, and places them in loading bay LB of lithographic apparatus LA. Deliver to The devices within a lithocell, often collectively referred to as a truck, are typically under the control of a truck control unit TCU, which itself may be controlled by a supervisory control system SCS, which is a supervisory control system SCS. , the lithographic apparatus LA may also be controlled (eg, via the lithographic control unit LACU).

[000238] To ensure that the substrate W to be exposed by the lithographic apparatus LA is correctly and reliably exposed, the substrate is inspected for characteristics of the patterned structures, e.g. overlay error between successive layers, line thickness, It is desirable to measure the critical dimension (CD) or the like. As such, an inspection tool (not shown) may be included in the lithocell LC. If an error is detected, adjustments may be made, for example, to the exposure of successive substrates or other process steps to be performed on the substrate W, particularly because other substrates W of the same batch or lot may continue to be exposed. It can be done when inspection is done before it is exposed or processed.

[000239] Inspection equipment, sometimes referred to as metrology equipment, is used to measure properties of substrates W, particularly how different substrates W vary in properties, or different layers of the same substrate W. is used to measure how the properties associated with vary from layer to layer. The inspection apparatus may alternatively be constructed to identify defects on the substrate W, and may eg be part of the lithocell LC, or may be integrated into the lithographic apparatus LA, or may be a stand-alone apparatus. The inspection apparatus checks the characteristics of the latent image (the image in the resist layer after exposure), the characteristics of the semi-latent image (the image in the resist layer after the post-exposure baking process PEB), or the developed resist image (the exposure of the resist). (parts or unexposed parts have been removed), or even the etched image (after a pattern transfer step such as etching) can be measured.

[000240] The lithographic apparatus LA is configured to accurately reproduce the pattern onto the substrate. The positions and dimensions of the applied features must be within certain tolerances. Position errors can occur due to overlay errors (often called "overlays"). Overlay is an error in placing a first feature during a first exposure relative to a second feature during a second exposure. A lithographic apparatus minimizes overlay errors by precisely aligning each wafer with a fiducial before patterning. This is done by measuring the positions of alignment marks on the substrate using alignment sensors. Details of the alignment process can be found in US Patent Application Publication No. 20100214550, incorporated herein by reference. Pattern dimension (CD) errors can occur, for example, when the substrate is not precisely positioned with respect to the focus plane of the lithographic apparatus. Such focus position errors may be related to non-flatness of the substrate surface. A lithographic apparatus minimizes such focus position errors by using level sensors to measure the topography of the substrate surface before patterning. A substrate height correction is applied during sequential patterning so that the patterning device is accurately imaged (focused) onto the substrate. Details of the level sensor system can be found in US Patent Application Publication No. 20070085991, which is incorporated herein by reference.

[000241] During IC manufacturing, other process equipment may be used in addition to the lithographic equipment LA and the metrology equipment MT. An etching station (not shown) processes the substrate after the pattern has been exposed in the resist. An etch station transfers the pattern from the resist into one or more layers underlying the resist layer. Typically, etching is based on applying a plasma medium. Local etching characteristics can be controlled, for example, by providing temperature control of the substrate or by inducing the plasma medium using a voltage control ring. Details of etch control can be found in International Patent Application Publication No. WO2011081645 and US Patent Application Publication No. 20060016561, which are incorporated herein by reference.

[000242] During the manufacture of an IC, the process conditions of processing a substrate using process equipment, such as a lithographic apparatus or an etching station, may remain stable such that the characteristics of features remain within specified control limits. Process stability may relate to features of the functional part of the IC, product features. Process control functions must be properly deployed to stabilize the process. Process control includes monitoring process data and implementing process correction measures (eg, control of process equipment based on characteristics of process data). Process control may be based on periodic measurements by metrology equipment MT, often referred to as "advanced process control" (also referred to as APC). Details of APC can be found in US Patent Application Publication No. 20120008127, which is incorporated herein by reference. A typical APC implementation involves periodically measuring metrology features on a substrate to monitor and correct for drift associated with one or more process tools. Metrology features reflect the response of product features to process variations. Metrology features may have different sensitivities to process variations compared to product features. In that case, a so-called "metrology to device" offset (also referred to further as MTD) can be measured. Metrology targets may include segmentation features, assist features, or features with specific geometries and/or dimensions to mimic the behavior of product features. Carefully designed metrology targets must respond to process variations in the same way as product features. Details of metrology target design can be found in International Patent Application Publication No. WO2015101458, incorporated herein by reference.

[000243] Distributing where metrology targets are present and/or measured across the substrate and/or patterning device is often referred to as a "sampling scheme." Typically, the sampling scheme is selected based on the expected fingerprint of the process parameters of interest, typically where the process parameters are constant in areas on the substrate where the process parameters are expected to vary. The area is sampled at a higher density than expected. Furthermore, there is a limit to the number of metrology measurements that can be performed based on the acceptable impact of the metrology measurements on the throughput of the lithography process. Careful selection of the sampling scheme is important to accurately control the lithography process so as not to affect throughput and/or to not dedicate too much area on the reticle or substrate to metrology features. is. Techniques related to metrology target positioning and/or measurement optimization are often referred to as "scheme optimization." Details of the optimization of the scheme can be found in International Patent Application Publication No. WO2015110191 and European Patent Application Publication No. 16193903.8, incorporated herein by reference.

[000244] Figure 3 shows a portion of a substrate 10 including several intermediate layers 12 containing features, which in this example are in the form of target alignment marks 14, such as gratings or the like. A target alignment mark 14 is etched into one of the intermediate layers 12 . Several additional intermediate layers 12 are deposited over layer 12 containing target alignment marks 14 . On top of these additional intermediate layers 12 further intermediate layers 12 are deposited, which in this example are in the form of nitride layers 16 . A first alignment mark 18 is etched into the nitride layer 16 at a prescribed lateral distance “X _L ” from a position equivalent to the target alignment mark 14 .

[000245] Over the nitride layer 16 is deposited a layer comprising carbon (hereinafter referred to as "carbon layer" 20), which in this example is in the form of a carbon hardmask. Due to the shape of the first alignment mark 18 etched into the nitride layer 16, the carbon layer 20 is deposited vertically above the first alignment mark 18 (eg, on top surface 24 of the carbon layer 20). A corresponding second alignment mark 22 is formed. The second alignment marks 22 are substantially laterally aligned with the first alignment marks 18 underlying the carbon layer 20 . Further target alignment to the upper surface 24 of the carbon layer 20 is achieved by establishing the lateral position of the target alignment mark 14 underlying the carbon layer 20 and the intermediate layer 12 by using the prescribed lateral distance "X _L ". It is possible to etch the marks 26 . Because the target alignment mark 14 and the further target alignment mark 26 are substantially laterally aligned, each layer of the substrate 10 is indirectly aligned such that any overlay (OV) 28 misalignment is minimized. It is possible to A resist layer 30 may be deposited on the carbon layer 20 if desired during the manufacturing process. As the OV 28 budget becomes tighter (e.g., as IC structures become smaller), this indirect alignment process may be sufficient to ensure that the structures within each layer are properly laterally aligned with respect to each other. accuracy may not be obtained.

[000246] FIGS. 4a-4c show a portion of a substrate 110 similar to substrate 10. FIG. In contrast to FIG. 3, FIGS. 4a-4c each show three steps of a different alignment process, which processes alignment measurements between layers in substrate 110 and/or extracts any other information from features. This is the process of measuring. Each element of FIGS. 4a-4c is similar or similar to each corresponding element of FIG. A process for measuring the alignment of substrate 110 and layers within substrate 110 is described in detail herein.

[000247] (i) a first alignment mark 18 is etched into the nitride layer 16, after which (ii) a carbon layer 20 is deposited thereon, after which (iii) a further target alignment mark 26 is etched into the carbon layer. In contrast to the process of FIG. 3, which is etched at 20, no such etching step is performed in the process of FIGS. 4a-4c. Alternatively, as shown in FIG. 4a, a carbon layer (eg, in the form of carbon layer 120) is deposited over nitride layer 116, such that top surface 124 of carbon layer 120 is flat and there is a flat surface 124 therein. not include any alignment marks.

[000248] A feature, in this example in the form of a target alignment mark 114 etched into one of several intermediate layers 112, is at least partially obscured by the carbon layer 120, thereby forming a target alignment mark. An optical signal (not shown in FIG. 4 a ) measuring information (eg, position) of 114 is prevented from reaching the target alignment mark 114 by optical absorption within the carbon layer 120 .

[000249] An energy delivery system (not shown here, but described below) is provided that emits a beam (e.g., of radiation and/or particles), which in this example is in the form of a laser beam 132, a laser The portion 134 is modified so that when the beam 132 impinges on at least the portion 134 of the carbon layer 120 , the portion 134 is highly transparent. As shown in FIG. 4b, the laser beam 132 has modified the portion 134 so that the portion 134 is more transparent than the surrounding carbon layer 120 . Optionally, a debris removal process or etching step may be performed to remove debris generated by the interaction of laser beam 132 with portion 134, resulting in a layer thickness of portion 134 as shown in FIG. 4b. may be thinner than the surrounding carbon layer 120 .

[000250] A resist layer 130 is deposited over the carbon layer 120 including the modified portion 134, as shown in Figure 4c. An alignment system (not shown) is configured to deliver an optical signal 136 that passes through resist layer 130, through portion 134, and through nitride layer 130 to determine the position of target alignment mark 114. 116 can propagate through several intermediate layers 112 . The increased transparency of portion 134 allows, at least in part, optical signal 136 to propagate through portion 134 with less absorption than unmodified regions of carbon layer 120 . Optical signal 136 then propagates through intermediate layer 112 and illuminates target alignment mark 114 . Optical signal 136 may be returned from target alignment mark 114 (eg, by reflection, scattering, and/or diffraction, etc.), and the returned optical signal (not shown) passes back through portion 134 and resist layer 130 . can be propagated. A substrate alignment system (not shown) includes a radiation sensor (not shown) configured to receive optical signals returned through portion 134 . Based on the properties of this returned optical signal (eg, intensity, formed diffraction and/or interference pattern, wavelength, etc.), the alignment measurement system measures the position and/or orientation of the target alignment mark 114 to It can be determined whether 110 is aligned.

[000251] In the process illustrated in FIGS. 4a-4c, fewer etching steps are performed than in the process illustrated in FIG. By allowing alignment or information measurement in fewer etching steps, the alignment/information measurement time may be reduced, thus reducing manufacturing costs. Furthermore, an additional part of the etching process may be avoided, eg refilling the clearout with a transparent etch stop material may not be necessary. Because the position of target alignment marks 114 can be directly measured, it may be possible to increase the accuracy of the overlay between structures in each layer of substrate 110 .

[000252] The process of modifying portion 134 is described in detail below. Carbon can take the form of several allotropic forms such as amorphous carbon, graphite, diamond-like carbon (DLC), and diamond. The carbon layer 120 used in IC fabrication is generally in the form of amorphous carbon, whose extinction coefficient "k" can exceed 0.4 for wavelengths of UV, visible and IR light, although amorphous It is understood that carbon can have different extinction coefficients "k" for these and other wavelengths. As a result of this relatively high extinction coefficient, the carbon layer 120 is relatively opaque at these and/or some other wavelengths, thereby allowing light from which the position of the target alignment mark 114 to be measured. Allowing the signal to penetrate the carbon layer 120 such that light absorption does not degrade the signal-to-noise ratio of the optical signal returned from the target alignment mark 114 below a threshold level for accurate measurement of alignment. or at least not sufficiently penetrate the carbon layer 120 .

[000253] In the example of Figure 4a, laser beam 132 interacts with portion 134 to cause structural modification of carbon layer 120, which causes a phase change of the carbon in layer 120, which causes the carbon can lead to a reduction in the extinction coefficient of Laser beam 132 delivers laser pulses that modify the structure of amorphous carbon toward diamond or DLC, which have extinction coefficients k less than 0.1, depending on the wavelength. When the extinction coefficient is thus reduced, the transparency of portion 134 reduces the optical signal for determining the position of target alignment mark 114 , and optical absorption reduces the signal-to-noise ratio of the optical signal returned from target alignment mark 114 . , or at least enough to penetrate carbon layer 120 without falling below a threshold level for accurate measurement of alignment. Visibility of target alignment mark 114 through carbon layer 120 may be enhanced if portion 134 is at least partially modified to form diamond or DLC. A laser beam 132 is used to structurally modify the carbon layer 120 in a portion 134 laterally aligned with the target alignment mark 114 (e.g., vertically above the target alignment mark 114). It can be locally more transparent than the carbon layer 120 in surrounding areas to allow alignment to be done directly through the carbon layer 120 .

[000254] Irradiation with laser pulses and associated rapid heating/cooling and/or pressure pulses increases the concentration of sp3-coordinated carbon atoms (associated with diamond and DLC) and The concentration of sp2-coordinated carbon atoms is reduced. This structural modification may reduce the concentration and/or mobility of electrons in the valence band of the carbon layer 120 to reduce the extinction coefficient.

[000255] An example laser system for modifying portion 134 is described in detail below. The peak energy and/or intensity of the laser pulse has been associated with generating sufficient heat and/or pressure to cause conversion of amorphous carbon to carbon and DLC. For example, deep ultraviolet (DUV) wavelength nanosecond laser pulses (as generated by an ArF excimer laser with a wavelength of 193 nm and a pulse duration of 20 ns) are used to melt amorphous carbon to a high degree of supercooling. A state can be created, from which various states of carbon can be created. Such an example is reported in Narayan et al., "Research Update: Direct conversion of amorphous carbon into diamond at ambient pressures and temperatures in air", APL Materials 3, 100702 (2015), incorporated herein by reference. ing. Narayan explains that quenching from supercooled conditions causes nucleation of nanodiamonds. Narayan also found that nanodiamonds act as seed crystals to form microdiamonds from highly supercooled carbon.

[000256] In a further laser system example for structural modification of carbon in the form of graphite, an infrared femtosecond (fs) laser system blasts polycrystalline graphite at a fluence of 4 J/ ^cm2 per pulse in a 4 kHz pulse train at 25 fs. Exposure to a 558 μJ laser pulse. Such an example is reported in Maia et al., “Synthesis of diamond-like phase from graphite by ultrafast laser driven dynamical compression”, Scientific Reports 5: 11812 (2015), incorporated herein by reference. According to Maia, this example laser system is a synthesis of translucent/transparent micrometer-sized structures carrying diamond-like and/or onion-like carbon phases.

[000257] FIG. 5 shows an energy source configured to emit radiation and/or particles in the form of a beam to modify at least a portion 134 of the carbon layer 120 of the substrate 110 to make the portion 134 more transparent. Energy delivery system 140 is shown including 142 , the beam in the form of laser beam 132 in this example. Modifying transparency may allow an optical signal to penetrate modified portion 134 and illuminate target alignment mark 114 on substrate 110, as described herein.

[000258] FIG. 6 shows a substrate alignment system 150 that recovers information such as position, orientation, etc. from the target alignment mark 114. As shown in FIG. The substrate alignment system 150 includes an optical system 152 that emits an optical signal 136 that penetrates a modified portion 134 of the carbon layer 120 (the boundary of the modified portion is indicated by dashed lines in FIG. 6) to achieve target alignment. The target alignment mark 114 is illuminated so that the optical signal 154 can be returned from the mark 114 to the optical system 152 . Returned optical signal 154 may encode position, orientation, etc. information from target alignment mark 114 in the form of reflected, scattered, and/or diffracted optical signals. Optical system 152 measures characteristics of return optical signal 154 to determine information related to target alignment mark 114, such as the position and orientation of target alignment mark 114 (and/or any other features or alignment marks). , whereby the alignment of the substrate 110 can be measured. One example of substrate alignment system 150 and/or optics 152 is an alignment sensor, eg, a Smart Alignment Sensor Hybrid (SMASH) sensor, which is referenced in US Pat. No. 8,767,183 B2 and US Pat. , 961,116, both of which are incorporated herein by reference. A SMASH sensor includes a single detector and a self-referencing interferometer with four different wavelengths and uses software to extract information such as the position of features. It is understood that any suitable alignment sensor may be used to measure information. Substrate alignment system 150 and/or optics 152 may include a radiation sensor (not shown) that receives reflected, scattered and/or diffracted optical signals. Energy delivery system 140, substrate alignment system 150 and/or optics 152 may be a Raman detection system (not shown) or any other suitable system for measuring Raman signals generated during modification of at least one portion 134. , may include instruments that measure characteristics of radiation emitted from at least one portion 134 before, during, or after modification of that portion 134 .

[000259] FIG. 7 shows an apparatus 160 for measuring information related to at least one feature (eg, target alignment mark 114) in substrate 110. As shown in FIG. Apparatus 160 includes the parts in FIGS. In this example, the target alignment mark 114 of the substrate 110 is at least partially obscured by the carbon layer 120, thereby providing optical signals from the optical system 152 to measure information related to the target alignment mark 114. 136 is blocked from reaching the target alignment mark 114 first. Apparatus 160 includes an energy delivery system 140 that modifies at least one portion 134 of carbon layer 120 to increase its transparency. Energy delivery system 140 includes an energy source 142 that emits laser beam 132 such that at least a portion of optical signal 136 can propagate through at least one portion 134 of carbon layer 120 . After modification of at least one portion 134 , the visibility of target alignment mark 114 is enhanced and optical system 152 is used to measure information (position, orientation, etc.) associated with target alignment mark 114 . Characteristics of the optical signal 154 can be measured.

[000260] FIG. 8 shows a debris removal system 170 for removing debris particles 172 generated during modification of the carbon layer 120 from the surface 124 of the carbon layer 120. FIG. An ablation plume 174 may be formed above the substrate 124 as a result of the interaction of the laser beam 132 with the carbon layer 120, which depends, for example, on the parameters of the laser beam 132 (e.g., pulse energy, pulse duration, , radiation fluence, etc.) exceeds the ablation threshold. FIG. 8 is a schematic diagram only and shows some possible debris removal systems 170 that may be used. Although only one substrate 110 is shown with modified portions 134 and corresponding target alignment marks 114 for each possible debris removal system 170, this is for convenience only and It is understood that one or more of the illustrated debris removal systems 170 may be provided for a single substrate 110 .

[000261] Alternatively or additionally, the debris removal system 170 provides radiation, such as a laser, that emits radiation 177 to irradiate debris particles 172 formed within the ablation plume 174 during modification of at least one portion 134 of the carbon layer 120. A source 176 (not shown) is included to reduce the size and/or number of debris particles 172 within the ablation plume 174 . The radiation source 176 can be separate from, part of, or the same as the energy source 142 previously described.

[000262] Alternatively or additionally, the debris removal system 170 includes a discharger 178 (e.g., into the radiation source 176) that generates a plasma 180 above the at least one portion 134 of the carbon layer during modification of the at least one portion 134. additionally or separately from the radiation source 176). Plasma 180 traps charged debris particles 172 .

[000263] Alternatively or additionally, debris removal system 170 includes a substrate support 182 upon which substrate 110 may be placed and/or held. Substrate support 182 is movable and/or tiltable such that debris particles 172 may be moved away from carbon layer 120 under gravity and/or with any suitable tool for removing debris particles 172 . For example, substrate support 182 may tilt substrate 110 such that surface 124 of carbon layer 120 faces downward.

[000264] Alternatively or additionally, debris removal system 170 includes a removable layer deposition system 184 (eg, a spin coater, etc.) configured to apply a removable layer 186 to surface 124 of carbon layer 120. FIG. Debris particles 172 may collect on removable layer 186 to be removed in any suitable manner at a time appropriate for removal of the removable layer. Alternatively or additionally, the debris removal system 170 includes a removable layer deposition system 184 in the form of a liquid film applicator 185 that removes debris particles 172 generated by the interaction of the beam 132 and the portion 134 . is configured to apply a liquid film 187 or any other form of liquid to the surface 124 of the carbon layer 120 to collect or recover the . Alternatively or additionally, debris removal system 170 may include chamber 188 that holds a liquid or gas that at least partially submerges or surrounds carbon layer 120 .

[000265] Alternatively or additionally, the debris removal system 170 includes a reaction medium 189 that may be held within the chamber 188 to react the debris particles 172 generated in the modification with the reaction medium 189. and/or in liquid form. Removal of products of the reaction, which may be volatile or soluble, is then performed, for example, by moving and/or tilting the substrate support 182, or by any other suitable method, such as fluid or gas flow. through the chamber 188 or over the substrate 110, or the like. Generated debris particles 172 may be treated in any suitable manner to remove debris particles 172 from carbon layer 172 .

[000266] FIG. 9 illustrates a layer deposition system 190 for depositing at least one layer on a substrate 110. As shown in FIG. Deposition system 190 may include a spin coater or any other suitable deposition system. Deposition system 190 may form part of a lithographic apparatus or tool (not shown) or any other suitable equipment. Layer deposition system 190 deposits carbon layer 120 on substrate 110 one or more before, during, or after energy delivery system 140 radiates beam 132 to modify portion 134 . can be configured to allow For example, in the illustrated example, the layer deposition system 190 deposits the first carbon sublayer 120a on the substrate 110 and then uses the energy delivery system 140 to deposit at least one portion 134 of the carbon layer 120. A second carbon sublayer 120b may then be deposited on substrate 110 using layer deposition system 190, which may be modified. Thus, the carbon layer 120 can be modified only partially through its total thickness, as shown in FIG. It is understood that any number of carbon layers 120 may be deposited and any of those carbon layers 120 may be modified such that one or more of carbon layers 120 includes at least one modified portion 134 . be done. Each layer of carbon layer 120 may be considered a sublayer of the overall thickness of carbon layer 120 .

[000267] Alternatively or additionally, deposition system 190 includes or is associated with a chemical-mechanical polisher (CMP) 192 that chemically and/or mechanically polishes and/or planarizes surface 124. FIG. CMP 192 can also be used to remove debris particles 172 . Using layer deposition system 190, other layers (eg, layers having various compositions or materials other than carbon) may be deposited on substrate 110 and/or dopants (boron, tungsten, nitrogen and/or other any dopant, etc.) may be deposited on the substrate 110 with carbon or any other material. Layer deposition system 190 may be operable to vary deposition conditions to create at least one seed layer (not shown) on carbon layer 120 (eg, surface 124 of carbon layer 124). The seed layer may contain sp3-coordinated carbon atoms in concentrations greater than 10%, preferably greater than 50%, to act as a seed layer for nanodiamond nucleation and/or diamond-like carbon (DLC). For example, the layer deposition system 190 may deposit an initial carbon layer 120 on the substrate 110, after which the layer deposition system 190 deposits a seed carbon layer 120 comprising sp3-coordinated carbon, etc. over the initial carbon layer 120. can. Seed carbon layer 120 may be applied in any suitable manner, such as by a plasma-assisted deposition system.

[000268] FIG. 10 illustrates parts of a method 200 for measuring information related to at least one feature (eg, target alignment mark 114) in a semiconductor device substrate 110, where the target alignment mark 114 is at least partially is obscured by the carbon layer 120 , thereby preventing the optical signal 136 for measuring information related to the target alignment mark 114 from reaching the target alignment mark 114 . A first step 202 of method 200 includes energy delivery system 140 emitting radiation and/or particles in the form of beam 132 , which upon incident on at least one portion 134 of carbon layer 120 , partially 134 to increase its transparency. In a second step 204 , radiation and/or particles in the form of beam 132 are incident on at least one portion 134 of carbon layer 120 to modify and measure information related to target alignment mark 114 . At least a portion of signal 136 may propagate through at least one portion 134 of carbon layer 120 . In a third step 206 , optical system 152 emits optical signal 136 that measures information related to target alignment mark 114 . In a fourth step 208 , the optical signal 136 penetrates the modified at least one portion 134 and propagates at least partially through the portion 134 to illuminate the target alignment mark 114 . In a fifth step 210, information relating to target alignment mark 114 is returned to optical system 152 through at least one portion 134 (eg, optical signal 136 is transmitted by target alignment mark 114 in the form of return optical signal 154). reflected, scattered and/or diffracted). In a sixth step 212, substrate alignment system 150 uses at least one characteristic (eg, intensity, wavelength, interference pattern, etc.) of return optical signal 152 to use information (eg, position , orientation, etc.).

[000269] FIG. 11 shows a feedback control system 220 that includes a control unit 222 that measures one or more parameters (eg, dimensions, transparency, etc.) of at least one portion 134 of the carbon layer 120. , and is configured to control the energy delivery system 140 based on one or more parameters. Alternatively or additionally, feedback control system 220 includes a radiation sensor 224 configured to receive radiation 226 from at least one portion 134 of carbon layer 120 (e.g., radiation 226 is received from portion 134). may be emitted by the laser beam 132 during or after modification of the . Feedback control system 220 is configured to measure one or more parameters of at least one portion 134 of carbon layer 120 based on received radiation 226 . Additionally, feedback control system 220 may control, via control unit 222, the amount of energy deposited by energy delivery system 140 (eg, to control the degree of modification of portion 134). Received radiation 226 may be extracted from energy source 142 (eg, reflected, scattered, diffracted, etc. from portion 134) or any other radiation and/or particle source. Alternatively or additionally, the received radiation 226 includes radiation (and/or particles) 228 produced by a further radiation source, such as a backlight 230, the radiation 228 passing through at least one portion 134 of the carbon layer 120. It is emitted from a radiation source 226 configured to propagate and back-illuminate the substrate 110 . Carbon layer 120 may at least partially block radiation 228, and when portion 134 is modified, radiation sensor 224 detects increased levels of radiation 228 (due to increased transparency of portion 134), Energy delivery system 140 may be prompted via control unit 222 to control, reduce, or eliminate the amount of radiation and/or particles being used to modify portion 134 .

[000270] The above examples refer to various apparatus, systems and methods for modifying the carbon layer 120. FIG. The principles of at least one of these devices, systems and methods are equally applicable to modifying other layers of substrates, such as those used in the manufacture of ICs and other semiconductor devices, including metals. or may be equally applicable, where chemical composition changes propagating in the metal layer may correspond to structural (phase) changes propagating in the carbon layer. The following examples describe apparatus, systems and methods for modifying metal layer 320 of substrate 310 .

[000271] FIG. 12 shows a system 300 for modifying a metal layer 320 of a substrate 310. As shown in FIG. Similar or similar features of system 300 where relevant, as compared to the apparatus, systems and methods of the examples above, include reference numerals increased by 100 or 200. FIG. System 300 includes an energy delivery system 340 configured to deliver a laser beam 332 that irradiates at least one portion 334 of metal layer 320 in this example.

[000272] Similar to the example apparatus 160 of FIG. 7, the example system 300 of FIG. include. Similar or similar features of device 360 present in device 160 of FIG. Apparatus 360 includes parts in FIGS. 5 and 6, and FIG. 12 includes corresponding features in FIGS. 5 and 6, which have associated reference numerals increased by 200. In this example, target alignment mark 314 of substrate 310 is at least partially obscured by metal layer 320 such that optics 352 of substrate alignment system 350 are used to measure information related to target alignment mark 314 . An optical signal 336 provided from (eg, an alignment sensor, etc.) is first blocked from reaching the target alignment mark 314 . Apparatus 360 includes an energy delivery system 340 that modifies at least one portion 334 of metal layer 320 to increase its transparency. Energy delivery system 340 includes an energy source 342 that emits a laser beam 332 such that at least a portion of optical signal 336 can propagate through at least one portion 334 of metal layer 320 . After modification of at least one portion 334 , the visibility of target alignment mark 314 through at least one portion 334 is increased for optical system 352 to measure information (position, orientation, etc.) associated with target alignment mark 314 . It is then possible to measure the characteristics of the return optical signal 354 from the target alignment mark 314 .

[000273] The substrate 310 is provided in a chamber 388, which can be configured to contain a reaction medium 389, such as a liquid or gas (e.g., oxygen, oxygen-rich gas, etc.), The reaction medium 389 is configured to allow reactions (eg, oxidation, etc.) of the metal layer 320 to occur, and the like. At least one portion 334 is irradiated such that the chemical composition of at least one portion 334 is changed (eg, by being oxidized, forming oxygen-based compounds, etc.) within reaction medium 389 .

[000274] In examples where reaction medium 389 is configured to cause oxidation of metal layer 320 (oxidation can be activated or accelerated by energy delivery system 340), the oxidation process combined with laser irradiation comprises at least: may involve the process/consideration of The oxidation process is non-linear and takes place in a non-equilibrium environment. When the (thermal) chemical reaction rate constant is temperature dependent (Arrhenius type) and also depends on other laser parameters (e.g. pulse energy, repetition rate, number of pulses, pulse duration, wavelength, beam intensity distribution, etc.) There is With short-pulse irradiation, situations can arise in which the temperature change is faster than the chemical reaction in the medium. In this example, the diffusion length may be shorter than the oxide layer thickness itself. For details on laser-induced oxidation processes of metals, see Nanaia et al, “Laser-induced oxidation in metals: state of the art”, Thin Solid Films 298 (1997), the contents of which are incorporated herein by reference. 160-164.

[000275] FIGS. 13a-e illustrate steps in an example process of using system 300 to modify metal layer 320 of substrate 310. FIG. FIG. 13a shows substrate 310 in chamber 388 before modification by laser beam 322. FIG. First, surface 321 of metal layer 320 may be passivated. That is, it may be covered with a native oxide layer with a thickness of about 1-50 nm (this thickness may be time dependent and may involve self-limiting oxidation). Diffusion may promote further and/or faster oxidation, which may require thermal or photoactivation of oxygen atoms/molecules. A photoactivation step in which a laser beam 332 illuminates a portion 334 is shown in FIG. 13b. In this example, chamber 388 includes a transparent section that allows radiation and/or particles to enter chamber 300 from external energy delivery system 340 (not shown in FIG. 13b, but shown in FIG. 12). ). Additionally or alternatively, energy delivery system 340 may be provided within chamber 388 . In the step of the process illustrated in FIG. 13c, activated atoms may be absorbed at the interface between reaction medium 389 and substrate 310, thereby promoting further diffusion of oxygen-containing species into metal layer 320. . FIG. 13c shows that the laser-generated oxide (eg, metal oxide such as WO ₃ ) extends out from the surface 321 for up to 1.5-3 (or so) times the thickness of the converted metal layer 320 (eg, , by expansion) is also shown to form protrusions/bumps 323 . An oxide layer grows at the interface (e.g., surface 321) between reaction medium 389 and substrate 310, and activated metal atoms also diffuse (e.g., via vacancies) into metal oxide-containing layer 320. becomes possible. Accordingly, the process modifies metal layer 320 by forming/generating metal oxides on at least one portion 334 of metal layer 320 . This process may change the optical properties of metal layer 320 (eg, in at least one portion 334). For example, the metal oxide (eg, modified by laser beam 332) becomes more transparent (eg, in the form of reduced absorption and/or reduced reflectivity) at the operating wavelength of substrate alignment system 350. there is This modification of at least one portion 334 of the metal layer 320 causes the substrate alignment system to direct light from the target alignment mark 314 (or any other feature) through the otherwise opaque and/or highly reflective metal layer 320 . It may be possible to obtain information (eg, related to position, alignment, etc.).

[000276] The process modifies the composition of the metal layer 320 by incorporating atoms of other elements (e.g., oxygen (oxidation), chloride, nitrogen, bromide, iodide, etc.), thereby increasing the thickness of the metal layer 320. The material may be fully or partially converted to a material with a lower refractive index and extinction coefficient.

[000277] In the example of oxidation, oxygen-containing species are incorporated into metal layer 320 via a chemically heterogeneous process based on diffusion of the species into the substrate. The process of incorporation of oxygen-containing species into metal layer 320 is based on the formation of chemical potentials and/or electric fields (eg, provided by laser beam 332), whereby the flux is defined and charged. Diffusion of the species (oxygen in the case of oxidation) is facilitated. After the oxidation process, excess material (eg, excess oxide on surface 321 of metal layer 320) is removed (eg, by CMP), polished, and/or cleaned, as shown in FIG. 13d. . FIG. 13e shows the substrate 310 in its final state before being sent to the lithography tool, with improved visibility of the alignment marks 314. FIG. Optionally, a BARC and resist layer 325 is deposited over the metal layer 320 including over the modified at least one portion 334 . After the metal layer 320 has been cleaned (and optionally provided with at least one further layer 325 as shown in FIG. 13e), the substrate alignment system 350 is used to align the target. Information related to alignment marks 314 (and/or any other features) may be measured. Further steps may then be performed, such as additional litho-etching steps. The process may make obtaining information from target alignment marks 314 (and/or any other features) relatively more direct, cheaper, faster, or with similar advantages. obtain. For example, fewer litho-etching steps may be required. For example, if a tungsten (W) layer is used for metal layer 320, up to eight (or more) layers may be required. After each deposition of metal (eg, W), a clearout step or other repeat steps may be required. For current crosspoint devices, a clearout step or other repeated steps may be required after each metal layer deposition. The process may reduce the need for too many or any clearout steps to be required, thereby reducing the time required to fabricate a crosspoint device or any other device that includes metal layers. obtain.

[000278] In some examples, metal layer 320 may include tungsten (W), but the process has a relatively high opacity (e.g., absorption/reflection It is understood that it may be applicable to any metal modification that may exhibit a modulus.

[000279] Laser-based or laser-initiated oxidation (eg, oxidation caused by laser beam 332) differs from pure thermal oxidation. As will be referred to in detail below, the process may involve photolytic and/or pyrolytic effects of the laser beam 332 on oxidation and/or other reaction processes, e.g. can accelerate the process of diffusion of the sample (eg, oxygen-containing species) within portion 334 by injecting .

[000280] Without being bound too much by theory, further details of the process are described below. It is understood that the process may vary depending on any parameter that affects the light-matter interaction between laser beam 332, metal layer 320 and reaction medium 389. FIG. The process may include any of the following steps. First, absorption of laser energy by linear and/or nonlinear mechanisms at surface 321 of metal layer 320 occurs, which causes the temperature of surface 321 to rise. The sticking or detachment of oxygen-containing species (eg, metal oxide molecules, etc.) from surface 321 may occur in conjunction with subatomic layer nucleation. Transport of oxygen-containing species may occur through oxide layers formed within metal layer 320 . These effects can lead to the growth of (metal) oxide interfaces, including surface 321 of metal layer 320 .

[000281] In the pyrolysis regime that modifies the metal layer 320, temperatures of up to 1000-2000°C may cause the metal oxide (eg, at or near the surface 321) to (eg, of the metal layer 320) sufficient to activate the diffusion of oxygen-containing species into the bulk metal. Such temperatures are such that short duration laser pulses (e.g., pulse widths t less than 100 ns, or preferably pulse widths in the range of 10 fs to 10 ns) are between 0.01 and 0.1 J/cm ² . achievable after impinging on surface 321 of metal layer 320 at a range of fluences. However, it is understood that other pulse duration and fluence combinations can be used, and that other parameters such as wavelength, pulse number, repetition rate, etc. can also affect the process.

[000282] In the case of the tungsten (W) example, the oxygen-rich phase (terminating phase) is tungsten trioxide (WO3) with a volume ratio W:WO3 of 1:3.3 (and so on). This process creates excess material and deposition of the metal layer 320 above the surface 321 can create a non-uniform surface 321 . Excess material may be removed, such as by CMP, as described herein.

[000283] In general, for other metallic materials, incorporation of other atoms (eg, oxygen-containing species, etc.) into the metallic layer 320 may occur during the process of increasing volume (i.e., different rates for different species). and depending on the type of metal in metal layer 320).

[000284] The process may be performed in sub-application regimes where the fluence of the laser beam 332 is below the ablation threshold. Therefore, the rate of material removal caused by ablation is expected to be less than the rate of metal oxide formation within metal layer 320 .

[000285] A laser pulse from laser beam 332 may deliver a temperature spike into metal layer 320, causing a temperature increase in a region of metal layer 320 up to 10-100 nm thick. The thickness of the layer whose temperature rises can be determined by a combination of the thermal conductivity of the metal layer 320, the heat capacity of the metal layer 320, the pulse duration of the laser beam 332, and the absorption depth of the laser beam 332 within the metal layer 320. ). The spatial temperature distribution within metal layer 320 may change over time and may depend on several factors in addition to those mentioned above, such as geometrical considerations (e.g., the temperature of metal layer 320). thickness), material properties (eg, material properties of metal layer 320 and/or any other layer of substrate 310), properties of laser beam 334, and the like. Due to heat dissipation by the metal layer 320 , the peak temperature of the substrate 310 can be significantly (eg, at least up to 10 times) lower than the temperature of the metal layer 320 so that the substrate 310 is exposed to the laser beam 332 and the metal layer 320 . can remain relatively immune to interactions between The duration of the high temperature condition caused by laser beam 332 depends on the thermal conductivity of metal layer 320 . Additionally, if the metal layer 320 is a thin film, the top conductivity of the substrate 310 can affect the duration of the hot state. When irradiating a metal layer 320 in a liquid, the duration of the hot state can be affected by the thermal conductivity of the liquid and the latent heat of vaporization of the liquid. In one example, the time that the hot condition can persist is less than 10 ns. However, it is understood that the duration of the hot condition may depend on various factors.

[000286] Diffusion of oxygen in one pulse from laser beam 332 may not be sufficient to modify at least a portion of the thickness of metal layer 320 (eg, a portion in the range of 10-100 nm, etc.). Thus, multiple pulse irradiation may be required to achieve sufficient oxide formation within metal layer 320 . In order to achieve oxide formation in a reasonable time (and to allow high throughput), the repetition rate of laser beam 332 may be at least 1 kHz, preferably at least 1 MHz. To allow for temperature relaxation between pulses (e.g., to prevent heat from propagating beyond the spot illuminated by laser beam 332 on metal layer 320), the duty cycle of laser beam 332 is 1%. can be considerably smaller than Any suitable laser parameters (e.g., pulse duration, repetition rate, pulse energy, etc.) may be used to control or limit heat propagation within metal layer 320 while achieving sufficient oxide formation within metal layer 320. , fluence, duty cycle, etc.) may be varied.

[000287] In one example, the laser beam 332 may include UV radiation to deliver a temperature spike into the metal layer 320. FIG. UV radiation can break chemical bonds within metal oxide-containing regions to the extent that it can effectively accommodate higher temperatures than would be considered achievable using non-UV radiation. UV radiation can cause photo-induced disassociation of metal oxides to liberate oxygen atoms, which is possible when using a laser beam 332 that does not contain UV radiation (eg, in hotter environments). It may be possible to diffuse into metal layer 320 much more rapidly than solder diffusion.

[000288] In one example, the metal layer 320 can be irradiated in a liquid environment. A liquid environment may provide a reaction medium 389 and may further prevent evaporation of oxides from metal layer 320 . For certain metals, the vaporization temperature of oxides can be much lower than that of metals (e.g., the boiling temperature of W is 5900°C, whereas that of _WO3 is 1700°C). ). However, there are cases where separation of metal oxides in liquids should be avoided, e.g. the metal oxides formed in the process (e.g., _WO3, etc.) are soluble in liquids (e.g., water, etc.). There are cases that should be avoided, for example by providing a liquid composition and/or pH that does not.

[000289] Optionally, a protective layer (e.g., a BARC layer similar to layer 325, a resist layer, etc.) may be deposited prior to laser irradiation by laser beam 332, such that metal layer 320 surrounds irradiated portion 334. This is to prevent it from reacting with the agent (for example, reaction medium 389 containing oxygen, etc.). The protective layer can be deposited using a layer deposition system or an auxiliary layer deposition system (not shown here but can be similar to layer deposition system 190 described above). The intensity of laser beam 332 (and/or other laser beam parameters) may be set to peel off the protective layer and allow metal layer 320 to be modified by laser beam 332 . Once the required thickness of metal layer 320 has been modified, protective layer removal (eg, by CMP, etc.), cleaning off, etc. may be performed.

[000290] The above examples refer to various apparatus, systems and methods for modifying carbon layer 120 or metal layer 320. FIG. In the following description, reference is made to apparatus, systems and/or methods for modifying metal layer 420 of substrate 410 .

[000291] FIG. 14 shows a system 400 for modifying a metal layer 420 of a substrate 410. As shown in FIG. Similar or similar features of system 400 where relevant, as compared to system 300 of FIGS. 12, 13a-e include reference numbers increased by 100. FIG. System 400 includes an energy delivery system 440 , which in this example includes an anodization system 441 that anodizes at least one portion 434 of metal layer 420 .

[000292] Similar to the example apparatus 160 of FIG. 7 and the example apparatus 360 of FIG. 12, the example system 400 of FIG. includes a device 460 for measuring the Similar or similar features of device 460 present in device 360 of FIG. 12 are associated with reference numerals increased by 100. FIG. In this example, target alignment mark 414 of substrate 410 is at least partially obscured by metal layer 420 such that optical system 452 of substrate alignment system 450 is used to measure information related to target alignment mark 414 . An optical signal 436 provided from (eg, an alignment sensor, etc.) is first blocked from reaching the target alignment mark 414 . Apparatus 460 includes an energy delivery system 440 that modifies at least one portion 434 of metal layer 420 to increase its transparency.

[000293] The energy delivery system 440 includes an energy source 442 that is between the metal layer 420 and an electrode 443 that is provided above (eg, suspended, supported, etc.) the metal layer 420. An electric field 432 is provided. In this example, energy source 442 is in the form of a voltage source electrically connected to metal layer 420 and electrode 443, with polarity such that metal layer 420 forms the anode and electrode 443 forms the cathode. . When an electric field 432 is applied, at least one portion 434 is modified at the anode (e.g., metal layer 420) to be more transparent and/or less reflective than other portions of metal layer 420. layers can be generated. At least one portion 434 may be modified by electric field 432 such that at least a portion of optical signal 436 may propagate through at least one portion 434 of metal layer 420 . After modification of at least one portion 434, the visibility of target alignment mark 414 is enhanced and optical system 452 is used to measure the information associated with target alignment mark 414 (position, orientation, etc.) from target alignment mark 414. Characteristics of the optical signal 454 can be measured.

[000294] The substrate 410 is provided within a chamber 488, which can be configured to contain a reaction medium 489, such as a liquid or gas (e.g., oxygen, oxygen-rich gas, etc.), Reactive medium 489 is configured to allow reactions (eg, oxidation, etc.) of metal layer 420 to occur, and the like. At least one portion 434 is anodized such that the chemical composition of at least one portion 434 is changed (eg, by being oxidized, forming an oxygen-based compound, etc.) within reaction medium 489 . In this example, energy source 442 is positioned outside chamber 488 and electrical contacts 445 extend from energy source 442 into chamber 488 to electrically connect metal layer 420 and electrode 443 within chamber 488 . It is

[000295] FIGS. 15a-e illustrate steps in an example process of using system 400 to modify metal layer 420 of substrate 410. FIG. 15a shows the substrate 410 before modification by the anodization system 441. FIG. In the substrate 410 shown in FIG. 15b, a protective layer 425a of an electrically insulating/protective material is deposited on the surface 421 of the metal layer 420, and a clearout 427 of the protective layer 425a is performed above the target alignment marks 414. FIG. Clearout 427 is performed by a litho-etching step (wet etching may be used, which may be a relatively inexpensive operation), thereby leaving clearout 427 in protective layer 425a above target alignment mark 414. created. If more than one target alignment mark 414 is provided, multiple clearouts 427 may be formed by the litho-etching process. Optionally, as shown in FIG. 15b, it may be possible to protect the sides 411 and bottom 413 of the substrate 410 from the anodization system 441, which protection may be provided (e.g., before the step shown in FIG. 15b). or during that step) by pre-depositing an insulating layer 425b (which may or may not include insulating material 425a) on the side surfaces 411 and bottom surface 413 using an insulating layer applicator 426). For the sake of brevity, layer 425b is not shown in subsequent figures.

[000296] FIG. 15c illustrates electrochemical or photoelectrochemical anodization using the anodization system 441 shown in FIG. It shows how it is modified to be an oxide. In one example, the energy source 442 uses bias voltage amplitude, electrolyte composition and/or pH to adjust the oxidation rate and porosity of the resulting metal oxide (eg, WO ₃ in the case of tungsten). , DC or pulsed bias, DC or pulsed illumination may be used. FIG. 15d is very similar to FIG. 15c and shows conductive liquid 428 provided between electrode 443 and at least one portion 434 by liquid application system 428a. Conductive liquid 428 may include reaction medium 489 used to anodize at least one portion 434 . It is understood that the depiction of conductive liquid 428 in Figure 15d is schematic. For example, chamber 488 may be partially or completely filled with conductive liquid 428 . In either case, the insulating layer 425b shown in FIG. 15b may protect the substrate from the conductive liquid 428. FIG. Alternatively or additionally, a substrate support 482 may be provided to hold the substrate 410 such that at least a portion of the substrate 410 (eg, bottom surface 413, etc.) is not in contact with the liquid 428 (eg, the chamber 488 is It can be done otherwise if it is completely filled with conductive liquid 428).

[000297] Similar to the example of FIG. _13c and as shown in FIG. (eg, due to expansion caused by an oxide (eg, 2-3 times less dense than the rest of the metal layer 420)) extending over up to 1.5-3 times (or the like) the thickness of the metal layer 420). Form.

[000298] Optionally or alternatively, to promote oxide formation in the metal layer 420, the clearout 427 in the insulating layer 425a or a larger area/total area of the substrate 410 is exposed to radiation from the radiation source 429, such as VIS. /UV/DUV radiation or the like.

[000299] As shown in Figure 15f, the insulating layer 425a (and insulating layer 425b, if present) has been removed from the substrate 410; For example, CMP and/or wet etching may be used to clean or planarize surface 421 of metal layer 420, remove excess oxide from protrusions/bumps 423, and/or remove electrically insulating material from layers 425a, 425b. can.

[000300] Figure 15f also shows a layer removal system 490 that removes at least a portion of any layer on substrate 410 (although layer removal system 490 may be provided for other steps of the process). For example, layer removal system 490 may be a litho-etching system, and/or a chemical-mechanical polishing (CMP) apparatus (as shown in FIG. in any suitable direction), and/or an ablation system such as a laser. Layer removal system 490 may be configured to clear out a portion of a layer on substrate 410 to form clearout 427 (eg, of FIG. 15b). In this example, layer removal system 490 may be configured to remove protective layer 425 a to planarize metal layer 420 such that protrusions/bumps 423 are removed to form planar surface 421 . Layer removal system 490 removes protective or electrically insulating layers 425 a , 425 b , 425 c on substrate 410 , BARC and/or resist on substrate 410 , at least a portion of metal layer 420 and/or modified metal layers in metal layer 420 . It is understood that it can be configured to at least partially remove at least one of the metals. Layer removal system 490 may be configured to remove materials other than layers containing carbon or metal from the substrate.

[000301] Figure 15g shows the final state of the substrate 410 before it is sent to the lithography tool, where the visibility of the alignment marks 414 is enhanced. Optionally, a BARC and resist layer 425c is deposited over metal layer 420, including over at least one portion 434 that has been modified. In one example, a hard mask (eg, carbon hard mask, etc.) can be replaced with a thin metal layer (eg, 3D cross-point device, etc.).

[000302] In some examples, anodization is used to produce _WO3 . 2.6 μm thick WO ₃ has been achieved by photoelectrochemical anodization, see Kim et al., “Photoelectrochemical anodization for the preparation of a thick tungsten”, the contents of which are incorporated herein by reference. oxide film”, Electrochemistry Communications, Vol. 17 pp. 10-13 (2012). Mesoporous WO ₃ films having a thickness of up to about 2 μm have been formed, see Yang et al., “Thick porous tungsten trioxide films by anodization of tungsten in tungsten,” the contents of which are incorporated herein by reference. fluoride containing phosphoric acid electrolyte”, Electrochemistry Communications, Vol. 11. pp. 1908-1911 (2009). Nanoporous WO _3-x with pore sizes of 5-600 nm have been produced and are described in Bauersfeld et al., "Nanoporous Tungsten Trioxide Grown by Electrochemical Anodization of Tungsten", the contents of which are incorporated herein by reference. for Gas Sensing Applications”, Procedia Engineering, Vol. 47, pp. 204-207 (2012).

[000303] It is understood that the oxide produced in anodization can be amorphous and nanoporous. In one example, the pores may be less than 1 μm, preferably less than 100 nm, to prevent strong scattering of light (eg, from optical signal 436) provided by optics 452. FIG. The porosity of the metal oxide can be adjusted by the composition of the reaction medium 389, the current density of the energy source 442, the pulsing of the bias, and the like.

[000304] At the base 435 of at least one portion 434 (i.e., at the interface between the metal layer 420 and the underlying layer of the substrate 410) where an oxide is formed, at least one thin (e.g., thickness h less than 100 nm) , preferably less than 30 nm) ensures that any layers of the substrate 410 below the metal layer 420 can be unaffected by the anodization process. can help to make Optical system 452 acquires sufficient signal 454 through the thin layer so that optical system 452 is associated with target alignment mark 414 and/or other features that penetrate base 435, in some examples. It is understood that it may still be possible to allow information to be obtained directly.

[000305] Further options and alternatives related to modifying the metal layer 420 are described below. It is understood that these options and alternatives may be applicable to one or both of the systems 300, 400 described above. Moreover, these options and alternatives may be applicable to any of the examples described herein, and may be applicable to any apparatus, methods and systems related to, for example, modification of carbon layer 120. .

[000306] In one example, at least one apparatus, method and/or system of the present disclosure can be extended to non-oxide based materials (eg, when modifying metal layers 320, 420). Described in the examples above is the local modification or conversion of the metal layers 320, 420 to (e.g., partial) oxides, which reduces the extinction coefficient (and optionally the refractive index) to Local thermal activation and/or photoactivation and/or electrochemical activation (anodization) as a means of reduction. These methods select from among H, B, C, N, O, Cl, Br, F, I, S, Si, P, etc. to reduce the extinction/refraction of the metal layers 320, 420 as needed. It can also be adapted to locally saturate the metal layer 320, 420 with one or more selected elements. In this example, energy delivery system 340 additionally or alternatively provides an ion beam that saturates metal layer 320 with other atoms, ions or molecules (such as the elements described above) to It can be configured to reduce the extinction coefficient of metal layer 320 . It is understood that other elements can be used to reduce their extinction coefficients and/or refractive indices in order to increase the transparency of the metal layers 320,420.

[000307] In one example, one or more of the elements H, B, C, N (etc.) may be used because their ashing/etching products (i.e., after the hardmask material is removed during the manufacturing process). chemically and/or environmentally safe).

[000308] When selecting which elements can be used for the anodization process, there are several considerations if it is necessary to preserve some material in at least one portion 334,434. may be, for example:
- The boiling point of the composition resulting from the combination of the metal layers 320, 420 and their elements may have to be relatively high (e.g., above 500°C), otherwise the metal and/or the metal oxide may be thermally etched/vaporized away in at least one portion 334, 434 and the desired composition change may not propagate through the metal layer 320, 420;
- The solubility of the resulting composition can be low (e.g. when irradiation in liquid form of the reaction medium 389, 489 is carried out), otherwise the metal layer 320, 420 (which is the metal and/or metal oxides) may be washed away in at least one portion 334, 434 and the desired compositional change may not propagate to the metal layers 320, 420; and/or
- The bandgap of the resulting composition can be greater than 1 eV, 0.5 eV, etc., thereby providing optical signals 336, 435 used in some example optical systems 352, 452 (e.g., which , which may use wavelengths in the ranges of 0.5-1 μm, 1-2 μm, etc., respectively) is neither (eg, substantially) absorbed nor reflected in at least one portion 334 , 434 .

[000309] The elements in each of the above examples are the smallest in their atomic radii, so it is expected that these elements may have the largest diffusion coefficients within the metal layer 320, 420 (i.e., atomic radii when compared to larger elements). It is understood that, alternatively or additionally, the metal (eg, tungsten, etc.) itself may require a high diffusion coefficient within the metal layer 320,420. For example, increasing the diffusion coefficient of metals in metal bromides, metal carbides, metal nitrides or other compositions may be done to provide high throughput modification or conversion of metal layers 320, 420.

[000310] In one example, an energy source 342 in the form of a particle beam (eg, electrons, photons, ions, etc.) may be used in addition to or in place of laser beam 332 to modify at least one portion 334. FIG. In one example, an ion energy of about 1-100 keV may penetrate deep enough into the metal layer 320 (eg, sufficient for processing metal layers of at least 3D crosspoint devices). In one example, the energy source 342 that produces the ion beam may have a sputtering yield of up to 0.1-1 per incident ion (eg, the mass of the target material atoms (eg, of the metal layer 320) is greater than the mass of the incident ions). if it can be bigger). In such an example, growth of at least one modified or converted portion 334 proceeds faster than sputtering, such that some of the modified material in metal layer 320 is removed from at least one portion 334 . (without being completely removed by sputtering).

[000311] at least one feature described with respect to system 300 and associated apparatus and methods may be applicable to or may be substituted for at least one feature described with respect to system 400 and associated apparatus and methods; or combined (and vice versa). At least one feature described with respect to systems 300, 400 and associated apparatus and methods may be used in any other example of the present disclosure, such as any other system, apparatus and method described with reference to FIGS. It is further understood that at least one feature described with respect to may be applicable, substituted or combined (and vice versa).

[000312] It is understood that any suitable energy delivery system 140 that provides at least one laser beam 132 to modify at least one portion 134 may be used. For example, energy source 142 may include at least one of a laser, a pulsed laser that emits at least one or a series of laser pulses, a continuous wave (CW) laser, or the like. Alternatively or additionally, energy source 142 may be configured to emit a beam containing particles to heat at least one portion 134 in a pulsed manner. For example, energy delivery system 140 emits one or more of beams including electron beams, ion beams, neutral beams, extreme ultraviolet (EUV) beams in the range of 4-20 nm, and radiation having wavelengths in the range of 20-100 nm. can be configured to It is understood that energy delivery system 140 may be configured to emit one or both of radiation and particles that modify at least one portion 134 .

[000313] The apparatus may include an electrical connection configured to connect to the layer and provide a voltage/current or ground connection to prevent charging of the layer. FIG. 14 shows an energy source 442 in the form of a voltage source electrically connected to metal layer 420 . The electrical connections and/or energy source 442 shown in FIG. 14 may be used, modified or adapted as used in any of the examples described herein to prevent charging of the carbon or metal containing layer. It is understood that

[000314] Figures 5 and 6 show the energy delivery system 140 and the substrate alignment system 150 as separate tools. Apparatus 160 shown in FIG. 7 includes features found in both energy delivery system 140 and substrate alignment system 150 . Energy delivery system 140 may be used to modify carbon layer 120 in a first step, and substrate alignment system 150 may be used to measure information related to target alignment mark 114 in a second step. It is understood that The first and second steps may be performed within the same tool or may be performed within separate tools. For example, substrate 110 may be moved between different tools between steps. Alternatively, substrate 110 may remain in situ during the process of measuring information related to target alignment marks 114 . Apparatus 160 may include one or more tools, which may be separate from each other or integral with each other.

[000315] Although the examples described herein refer to modification of the carbon layer 120, it is understood that other layers may be modified. For example, energy deposition system 140 may be operable to modify portion 134 of any layer comprising a suitable element, compound, or composition. Layers can include pure carbon and can include doped carbon. For example, layers may include dopants such as tungsten, boron, nitrogen, and the like. It is understood that any suitable dopant or impurity can be deposited with carbon. Although this disclosure refers to layers containing carbon, it is understood that modifications of layers that do not contain carbon may also be envisioned in this disclosure. The layer may function to provide a hardmask and any suitable material may be used to achieve this functionality. Although the present methods and apparatus have been described to promote localized phase changes in carbon or carbon-containing layers or portions thereof, metal or metal-containing layers can be used if reagents and optional cooling are provided. Or it may be applicable to a local change of a portion thereof.

[000316] Although specific reference is made herein to the use of the lithographic apparatus in the manufacture of ICs, it is understood that the lithographic apparatus described herein may have other applications. should. Other possible applications include the manufacture of integrated optics, magnetic domain memory guidance and detection patterns, flat panel displays, liquid crystal displays (LCDs), thin film magnetic heads, and the like.

[000317] In one example, the present disclosure may form part of a metrology device. Metrology equipment can be used to measure the alignment of a projected pattern formed in a resist on a substrate relative to patterns already present on the substrate. This relative alignment measurement is sometimes called overlay. The metrology apparatus may, for example, be placed directly adjacent to the lithographic apparatus and used to measure overlay before the substrate (and resist) is processed.

[000318] Although specific reference may be made herein to examples of the disclosure in the context of a lithographic apparatus, examples of the disclosure may be used in other apparatus. Examples of this disclosure include mask inspection equipment, metrology equipment, lithography scanners, lithography tracking systems, substrate or wafer track tools, deposition tools or objects such as wafers (or other substrates) or masks (or other patterning devices). It can form part of any device that measures or processes. Collectively, these apparatuses may be referred to as lithography tools. Such lithography tools may use vacuum conditions or ambient (non-vacuum) conditions.

[000319] Although specific reference has been made thus far to the use of examples of the disclosure in the context of optical lithography, the disclosure is not limited to optical lithography and may be used in other applications as the context permits. It is understood that it can be used in, for example, imprint lithography.

[000320] A computer program may be configured to implement any of the methods described above. A computer program can be embodied on a computer readable medium. A computer program can be a computer program product. A computer program product may include a computer-usable non-transitory storage medium. A computer program product may have computer readable program code embodied on a medium and configured to perform the method. A computer program product may be configured to cause at least one processor to perform part or all of the method.

[000321] Various methods and apparatus are described herein with reference to block or flowchart illustrations of computer-implemented methods, apparatus (systems and/or devices) and/or computer program products. It will be understood that the blocks in the block diagrams and/or flowchart illustrations, and combinations of blocks in the block diagrams and/or flowchart illustrations, can be implemented by computer program instructions being executed by one or more computer circuits. These computer program instructions may be provided to processor circuitry of general-purpose computer circuitry, special-purpose computer circuitry and/or other programmable data processing circuitry producing machines, whereby those instructions may be used by computers and/or other One or more of the block diagrams and/or flow charts may be implemented by executing on a programmable data processing device to transform and control the transistors, values stored in memory locations and other hardware components within such circuits. Performs the functions/acts specified in the blocks, thereby creating means (functionality) and/or structure for performing the functions/acts specified in one or more of the blocks in the block diagrams and/or flowchart illustrations.

[000322] Further embodiments of the present invention are disclosed in the following numbered list of embodiments.
1. An apparatus for measuring information related to at least one feature in a semiconductor device substrate, the at least one feature being at least partially obscured by a layer comprising carbon, thereby measuring information related to the at least one feature. An optical signal for measuring information to be transmitted is blocked from reaching the feature, and the device
An energy delivery system for emitting radiation and/or particles for modifying at least one portion of a layer such that the radiation and/or particles impinge on the at least one portion when or after the impingement on the at least one portion. An energy delivery system configured to enhance transparency so that at least a portion of an optical signal can propagate through at least one portion of a layer to measure information related to the at least one feature. apparatus, including
2. 2. An apparatus as recited in embodiment 1, wherein the energy delivery system is configured to emit a beam to modify at least one portion of the layer by reducing the extinction coefficient of carbon in at least one portion of the layer. .
3. The energy delivery system causes a phase change in the carbon and/or causes an increase in the concentration of (e.g., tetravalent/sp3 coordinated) carbon atoms in at least one portion of the layer, thereby 3. Apparatus according to embodiment 1 or 2, configured to emit a beam for modifying the.
4. 4. The apparatus of embodiment 3, wherein the phase change modifies the carbon in at least one portion of the layer such that the carbon forms at least one of diamond and diamond-like carbon.
5. An apparatus according to any preceding embodiment, wherein the energy delivery system comprises at least one of at least one laser that emits radiation and/or at least one source of a focused beam of energetic particles.
6. 6. The apparatus of embodiment 5, wherein at least one laser comprises a pulsed laser source configured to emit a series of laser pulses.
7. 7. Apparatus according to embodiment 5 or 6, wherein the at least one laser is configured to emit radiation having at least one wavelength in the range of 4 nm to 3 μm.
8. at least one laser
visible and/or infrared laser pulses with pulse durations ranging from 5 fs to 500 ps;
Embodiments configured to emit one or more of: ultraviolet laser pulses with pulse durations in the range of 1 ps to 500 ns; and soft X-ray to DUV laser pulses with pulse durations in the range of 1 fs to 100 ns. 8. The device according to any one of 5-7.
9. The at least one laser is configured to emit an initial pulse train including at least one laser pulse of a first pulse duration, and at least one laser pulse of a second shorter pulse duration. 9. The apparatus of any of embodiments 5-8, further configured to emit a train of pulses comprising:
10. 10. The apparatus of any of embodiments 5-9, wherein at least one laser is configured to emit radiation having a peak radiation fluence or intensity below the ablation threshold of the layer.
11. 11. The apparatus of any of embodiments 5-10, wherein the at least one laser is configured to emit at least one of linearly polarized radiation, non-linearly polarized radiation, elliptically polarized radiation and helically polarized radiation.
12. The at least one laser has a sequence of laser pulses in which each laser pulse has one of linear, circular, elliptical and helical polarization and/or some pulses in the train are polarized differently than other pulses in the train. 12. The apparatus of embodiment 11, configured to emit a sequence of laser pulses having a .
13. An apparatus according to any preceding embodiment, wherein the energy delivery system is configured to emit radiation and/or particles for pulsed heating of at least one portion of the layer.
14. The energy delivery system emits one or more beams comprising electron beams, ion beams, neutral beams, extreme ultraviolet (EUV) beams in the range of 5-20 nm, and radiation having wavelengths in the range of 20-100 nm. 14. The apparatus of embodiment 13, configured.
15. Any preceding embodiment further comprising a feedback control system configured to measure one or more parameters of at least one portion of the layer and control the energy delivery system based on the one or more parameters. The apparatus described in .
16. the feedback control system includes a radiation sensor configured to receive radiation from at least one portion of the layer;
16. The apparatus of embodiment 15, wherein the feedback control system is configured to measure one or more parameters of at least one portion of the layer based on received radiation.
17. The radiation received
radiation from the energy delivery system reflected or scattered from at least one portion of the layer;
radiation propagated through at least one portion of the layer, the radiation emitted from a radiation source configured to back-illuminate the semiconductor device substrate;
radiation excited in the portion of the layer by radiation and/or particles from the energy delivery system; and directed to a spot substantially overlapping the portion of the layer modified by the energy delivery system and reflected and/or reflected from the spot. 17. The apparatus of embodiment 16, comprising one or more of the radiation from the auxiliary light source being scattered.
18. Any preceding embodiment, wherein the energy delivery system is configured to emit radiation and/or particles for modifying the transparency of at least one portion of the layer to a depth less than the entire thickness of the layer. Apparatus as described.
19. An apparatus according to any preceding embodiment, comprising a layer deposition system for depositing a layer onto a substrate.
20. The layer deposition system is configured to deposit a first sublayer of the layer onto the substrate, and the energy delivery system is operable to modify at least one portion of the first sublayer. 20. An apparatus according to embodiment 19.
21. 21. The apparatus of embodiment 20, wherein the layer deposition system is configured to deposit a second sublayer of the layer onto the first sublayer after modification of at least one portion of the first sublayer. .
22. The layer deposition system is operable to vary the deposition conditions to create at least one seed sublayer in the layer, the seed sublayer comprising nanodiamond nucleation and/or diamond-like carbon (DLC). 22. The device of any of embodiments 19-21, comprising sp3-coordinated carbons to act as seeds for.
23. 23. The apparatus of embodiment 22, wherein the layer deposition system is configured to deposit at least one seed sublayer on top of the layer.
24. An apparatus according to any preceding embodiment, including a debris removal system for removing debris particles generated during modification from the surface of the layer.
25. The debris removal system includes a radiation source, such as a laser, that emits radiation to irradiate debris particles formed within the ablation plume during modification of at least one portion of the layer, thereby reducing the size of the debris particles within the ablation plume. and/or the number of debris particles is reduced.
26. 26. According to embodiment 24 or 25, the debris removal system includes a discharger that generates a plasma above the at least one portion of the layer during modification of the at least one portion of the layer, the plasma trapping charged debris particles. Apparatus as described.
27. 27. The apparatus of any of embodiments 24-26, wherein the debris removal system is configured to tilt the semiconductor device substrate such that debris particles are separated from the layer under gravity.
28. The debris removal system is configured to apply a removable layer to a surface of the layer, debris particles are collected on the removable layer, and the debris removal system is removable after modification of at least one portion of the layer. 28. The apparatus of any of embodiments 24-27, further configured to remove a layer.
29. 29. An apparatus according to embodiment 28, wherein the debris removal system is configured to remove the removable layer at the location of at least one portion of the layer before the energy delivery system emits radiation and/or particles.
30. The debris removal system is configured to provide a reaction medium proximate at least one portion of the layer whereby only products of reaction of materials within the ablation plume are substantially volatile or soluble. A device according to any of aspects 24-29.
31. Any preceding embodiment further comprising a chamber configured to hold a liquid, wherein the semiconductor device substrate is at least partially immersed in the liquid during radiation and/or particle emission by the energy delivery system. The apparatus described in .
32. An apparatus according to any preceding embodiment, further comprising a liquid film applicator configured to apply a liquid film to the surface of the layer before the energy delivery system emits radiation and/or particles.
33. An apparatus as in any preceding embodiment, comprising an optical system configured to transmit an optical signal through at least one portion of the layer to measure information related to the at least one feature. .
34. An apparatus as in any preceding embodiment, including a substrate alignment system that measures information related to at least one feature based on a return optical signal received through at least one portion of the layer.
35. 35. The apparatus of embodiment 34, wherein the substrate alignment system is configured to measure at least one of presence, position and orientation of at least one feature to determine whether the substrate is aligned.
36. 36. The apparatus according to embodiment 35, wherein the substrate alignment system is configured to control the relative positioning between the substrate and the lithographic apparatus or tool to align the substrate therein.
37. An apparatus according to any preceding embodiment, wherein the features comprise alignment marks or overlay marks.
38. A device according to any preceding embodiment, wherein the modified layer comprises at least 20% carbon, preferably at least 50% carbon.
39. A lithographic apparatus comprising an apparatus according to any one of embodiments 1-38.
40. A lithography tool comprising the apparatus of any of embodiments 1-38.
41. 1. A method for measuring information relating to at least one feature in a semiconductor device substrate, wherein the at least one feature is at least partially obscured by a layer comprising carbon, thereby relating to the at least one feature. An optical signal for measuring information to be blocked from reaching a feature, the method comprising:
The energy delivery system emits radiation and/or particles for modifying at least one portion of the layer to render the at least one portion transparent when or after the radiation and/or particles impinge on the at least one portion. enhancing, whereby at least a portion of the optical signal for measuring information relating to the at least one feature passes through at least one portion of the layer for measuring information relating to the at least one feature; A method capable of propagating, including enhancing.
42. 42. A computer program product comprising instructions that, when run on at least one processor, cause the at least one processor to control an apparatus to perform the method according to embodiment 41.
43. 43. A carrier comprising the computer program of embodiment 42, wherein the carrier is an electronic signal, optical signal, radio signal or non-transitory computer readable storage medium.
44. Apparatus for measuring information associated with at least one feature in a semiconductor device substrate, the at least one feature being at least partially obscured by a layer comprising carbon or metal, whereby the at least one feature An optical signal for measuring information related to is blocked from reaching the feature, and the device
An energy delivery system configured to modify at least one portion of the layer to increase the transparency of at least one portion such that at least a portion of the optical signal is associated with the at least one feature. An apparatus comprising an energy delivery system capable of propagating through at least one portion of a layer to measure information on the layer.
45. The energy delivery system is configured to emit a beam for modifying at least one portion of the layer by reducing the extinction coefficient and/or refractive index of the carbon or metal in at least one portion of the layer. 45. The apparatus of embodiment 44.
46. The energy delivery system causes at least one portion of the layer comprising carbon by causing a phase change in the carbon and/or causing an increase in the concentration of tetravalent (sp3 coordinated) carbon atoms in at least one portion of the layer. 46. Apparatus according to embodiment 44 or 45, configured to emit a beam for modifying the .
47. 47. The apparatus of embodiment 46, wherein the phase change modifies the carbon in at least one portion of the layer such that the carbon forms at least one of diamond and diamond-like carbon.
48. An apparatus according to any preceding embodiment, wherein the energy delivery system comprises at least one of at least one laser that emits radiation and/or at least one source of a focused beam of energetic particles.
49. 49. The apparatus of embodiment 48, wherein the at least one laser comprises a pulsed laser source configured to emit a series of laser pulses.
50. 50. Apparatus according to embodiment 48 or 49, wherein the at least one laser is configured to emit radiation having at least one wavelength in the range of 4 nm to 3 μm.
51. at least one laser
visible and/or infrared laser pulses with pulse durations ranging from 5 fs to 500 ps;
Embodiments configured to emit one or more of: ultraviolet laser pulses with pulse durations in the range of 1 ps to 500 ns; and soft X-ray to DUV laser pulses with pulse durations in the range of 1 fs to 100 ns. 51. Apparatus according to any of 48-50.
52. The at least one laser is configured to emit an initial pulse train including at least one laser pulse of a first pulse duration, and at least one laser pulse of a second shorter pulse duration. 52. The apparatus according to any of embodiments 48-51, further configured to emit a train of pulses comprising:
53. 53. The apparatus of any of embodiments 48-52, wherein at least one laser is configured to emit radiation having a peak radiation fluence or intensity below the ablation threshold of the layer.
54. 54. The apparatus according to any of embodiments 48-53, wherein the at least one laser is configured to emit at least one of linearly polarized radiation, non-linearly polarized radiation, elliptically polarized radiation and helically polarized radiation.
55. The at least one laser has a sequence of laser pulses in which each laser pulse has one of linear, circular, elliptical and helical polarization and/or some pulses in the train are polarized differently than other pulses in the train. 55. An apparatus according to embodiment 54, configured to emit a sequence of laser pulses having
56. An apparatus according to any preceding embodiment, wherein the energy delivery system is configured to emit radiation and/or particles for pulsed heating of at least one portion of the layer.
57. The energy delivery system emits one or more beams comprising electron beams, ion beams, neutral beams, extreme ultraviolet (EUV) beams in the range of 5-20 nm, and radiation having wavelengths in the range of 20-100 nm. 57. The apparatus of embodiment 56, wherein:
58. An apparatus according to any preceding embodiment, wherein the energy delivery system is configured to emit radiation and/or particles for modifying at least one portion of the layer comprising metal.
59. The energy delivery system modifies at least one portion of the metal-containing layer in the presence of the reaction medium to chemically transform at least one portion of the layer to change the chemical composition of the at least one portion. 59. An apparatus according to embodiment 58, configured to.
60. 60. The apparatus according to embodiment 58 or 59, wherein the energy delivery system comprises a laser configured to emit pulses having a duration of less than 100 ns, optionally less than 10 ns, optionally greater than 10 fs.
61. The laser is configured to deliver a plurality of pulses, optionally a pulse repetition rate of at least 1 kHz, optionally a pulse repetition rate of at least 1 MHz, and/or optionally 61. The apparatus of embodiment 60, wherein optionally the pulse duty cycle is less than 1%.
62. 62. Apparatus according to embodiment 60 or 61, wherein the laser is configured to emit radiation having a fluence in the range of 0.01-1 J/cm ² .
63. The energy delivery system is configured to provide an ion beam to saturate the metal-comprising layer with other atoms, ions or molecules to increase the transparency of at least one portion of the metal-comprising layer. 63. The apparatus according to embodiment 58 or 62.
64. 64. The apparatus of embodiment 63, wherein the ion beam energy is greater than 1 eV, optionally greater than 100 eV.
65. 65. An apparatus according to embodiment 63 or 64, wherein the ions comprise C ions and/or at least one of B, N, O, Ga, He, Ne, Ar, Kr, Xe, and the like.
66. 66. The apparatus of embodiment 65, configured to facilitate outgassing using one or more noble gas ions to leave the layer free of additional dopants.
67. An apparatus as in any preceding embodiment, comprising an electrical connection connected to the layer and configured to provide a voltage/current or ground connection to prevent charging of the layer.
68. The energy delivery system includes an anodization system configured to provide an electric field potential between a layer comprising a metal and an electrode that generates an electric field, the apparatus chemically oxidizing at least one portion of the layer An apparatus according to any preceding embodiment, configured to provide a reaction medium for transforming to change the chemical composition of at least one portion.
69. 69. The apparatus of embodiment 68, wherein the apparatus is configured to deposit a protective layer and/or a clearout protective layer on the layer around at least one portion of the layer.
70. 70. The apparatus according to embodiment 68 or 69, comprising a liquid application system configured to provide a conductive liquid between at least one portion of the layer comprising metal and the electrode.
71. 71. The apparatus of embodiment 70, comprising a substrate support configured to support the substrate such that at least a portion of the substrate does not come into contact with the conductive liquid.
72. 72. The apparatus of embodiment 70 or 71, comprising an insulating layer applicator configured to apply an insulating layer to at least a portion of the substrate to prevent contact between the portion of the substrate and the conductive liquid.
73. The anodization system includes an energy source connected to the metal layer and the electrode to generate an electric field between the metal layer and the electrode, optionally the energy source is a continuous and/or pulsed voltage. 73. The apparatus according to any of embodiments 68-72, configured to provide and/or an electric current.
74. 74. The apparatus of embodiment 73, wherein the energy source comprises a voltage source electrically connected to the metal layer and the electrode having a polarity such that the metal layer forms the anode and the electrode forms the cathode.
75. 75. Any of embodiments 68-74, wherein the anodization system is configured to perform electrochemical and/or photoelectrochemical anodization to modify at least one portion of the layer comprising the metal. Apparatus as described.
76. 76. The apparatus according to any of embodiments 68-75, wherein at least one portion is defined in a preceding lithographic etching process through openings in a protective layer provided or formed over the metal-comprising layer.
77. 77. The apparatus according to any of embodiments 68-76, wherein at least one portion is defined by a focused beam of the energy delivery system.
78. The energy delivery system, in the presence of a reaction medium, chemically, electrochemically and/or photoelectrochemically converts at least one portion of the layer to change the chemical composition of the at least one portion; 78. The apparatus of any of embodiments 44-77, configured to modify at least one portion of a layer comprising metal.
79. 79. The apparatus according to embodiment 78, comprising a chamber containing a reaction medium.
80. The chamber is configured to allow radiation and/or particles to interact with the metal-comprising layer, and optionally the chamber allows radiation and/or particles to enter the chamber. 80. The apparatus according to embodiment 79, comprising a transparent section that allows the energy delivery system to pass through and/or optionally, the energy delivery system is provided within the chamber.
81. 81. An apparatus according to embodiment 78, 79 or 80, wherein the reaction medium comprises gas and/or liquid.
82. The reaction medium includes oxygen (O), oxides, hydrogen (H), boron (B), borides, carbon (C), carbides, nitrogen (N), nitrides, chlorine (Cl), chlorides, bromine ( Br), Bromide, Fluorine (F), Fluoride, Iodine (I), Iodide, Silicon (Si), Silicide, Phosphorus (P), Phosphide, at least one atom, ion or molecule. 78-81.
83. 83. The apparatus according to any of embodiments 78-82, wherein the metal comprises tungsten.
84. The energy delivery system changes the chemical composition of the metal-containing layer such that at least one atom, ion or molecule in the reaction medium reacts with the metal to form a new chemical compound within the at least one portion. 84. The apparatus according to any of embodiments 78-83, configured to:
85. 85. The apparatus according to any of embodiments 78-84, wherein the energy delivery system is further configured to deliver UV, DUV and/or EUV radiation to break chemical bonds in the reaction medium.
86. a debris removal system for removing debris generated during modification from the surface of the layer; An apparatus as in any preceding embodiment, comprising:
87. a cooling system for contacting the substrate with gas and/or liquid to remove heat from the substrate; A device according to any preceding embodiment, configured to deliver a liquid.
88. An auxiliary layer deposition system for depositing a layer on the substrate, optionally the auxiliary layer deposition system applies a protective layer, electrically insulating An apparatus as in any preceding embodiment, configured to deposit a layer, BARC and/or resist.
89. 12. An apparatus according to any preceding embodiment, wherein at least one portion of the opaque layer is modified prior to deposition of the optional BARC and resist layers and patterning of the substrate in the litho-tool.
90. comprising a layer deposition system, the layer deposition system operable to vary deposition conditions for the creation of at least one seed sublayer within the layer; and/or sp3-coordinated carbon acting as a seed sublayer for diamond-like carbon (DLC), optionally wherein the concentration of sp3-coordinated carbon atoms in the seed sublayer is higher than in other sublayers; An apparatus as in any preceding embodiment.
91. The layer deposition system is configured such that an additional layer having a relatively elevated concentration of tetravalent carbon atoms with respect to the opaque carbon layer and having a thickness less than the layer is provided as a seed sublayer. 91. Apparatus according to aspect 90.
92. The layer deposition system uses structural modification of the layer, including the carbon layer, to enhance the transparency of the lower portion of the layer deposited in the first deposition process, while the upper portion of the layer after modification by the second deposition process. 92. Apparatus according to embodiment 90 or 91, wherein the apparatus is configured to provide a
93. a layer removal system for removing material from the substrate, optionally the layer removal system comprising a litho-etching system configured such that the material removed from the substrate corresponds to the location and size of the at least one feature. Any preceding embodiment comprising and/or optionally wherein the layer removal system comprises a chemical mechanical polishing (CMP) apparatus and/or optionally wherein the layer removal system comprises an ablation system equipment.
94. The layer removal system removes a protective layer on the substrate, an electrically insulating layer on the substrate, a BARC and/or a resist on the substrate, a carbon or metal containing layer and/or a modified carbon in the carbon or metal containing layer, or 94. The apparatus of embodiment 93, configured to at least partially remove and/or planarize at least one of the metals.
95. Any preceding embodiment further comprising a feedback control system configured to measure one or more parameters of at least one portion of the layer and control the energy delivery system based on the one or more parameters. The apparatus described in .
96. The feedback control system comprises a radiation sensor, optionally the radiation sensor configured to receive radiation from at least one portion of the layer and/or optionally the radiation received by the feedback control system 96. The apparatus of embodiment 95, wherein <RTI ID=0.0>includes</RTI> reflected and/or scattered radiation generated by the energy delivery system.
97. A method for measuring information associated with at least one feature in a semiconductor device substrate, wherein the at least one feature is at least partially obscured by a layer comprising carbon or metal, whereby the at least one feature an optical signal for measuring information related to is blocked from reaching the feature, the method comprising:
modifying at least one portion of the layer with an energy delivery system to increase the transparency of at least one portion, thereby providing at least one optical signal for measuring information related to at least one feature; The method comprising enhancing, the portion being capable of propagating through at least one portion of the layer to measure information related to the at least one feature.
98. An apparatus for measuring information related to at least one feature in a semiconductor device substrate, the at least one feature being at least partially obscured by a layer comprising carbon, thereby measuring information related to the at least one feature. An optical signal for measuring information to be transmitted is blocked from reaching the feature, and the device
An energy delivery system configured to modify at least one portion of the layer to increase the transparency of at least one portion such that at least a portion of the optical signal is associated with the at least one feature. an energy delivery system capable of propagating through at least one portion of the layer to measure information on the energy delivery system, the energy delivery system causing a phase change in the carbon and/or four phases in the at least one portion of the layer; An apparatus configured to emit a beam for modifying at least one portion of a layer by causing an increase in the concentration of valent (sp3-coordinated) carbon atoms.
99. 99. The apparatus of embodiment 98, wherein the phase change modifies the carbon in at least one portion of the layer such that the carbon forms at least one of diamond and diamond-like carbon.
100. 99. The apparatus according to embodiment 98, wherein the energy delivery system comprises at least one of at least one pulsed laser source emitting radiation and/or at least one source of a focused beam of energetic particles.
101. at least one laser
visible and/or infrared laser pulses with pulse durations ranging from 5 fs to 500 ps;
Embodiments configured to emit one or more of: ultraviolet laser pulses with pulse durations in the range of 1 ps to 500 ns; and soft X-ray to DUV laser pulses with pulse durations in the range of 1 fs to 100 ns. 100. The apparatus according to 100.
102. The at least one laser is configured to emit an initial pulse train including at least one laser pulse of a first pulse duration, and at least one laser pulse of a second shorter pulse duration. 101. The apparatus of embodiment 100, further configured to emit a train of pulses comprising:
103. 101. The apparatus of embodiment 100, wherein the at least one pulsed laser source is configured to emit radiation having a peak radiation fluence or intensity below the ablation threshold of the layer.
104. 99. The apparatus according to embodiment 98, wherein the energy delivery system is configured to emit radiation and/or particles for pulsed heating of at least one portion of the layer.
105. The energy delivery system emits one or more beams comprising electron beams, ion beams, neutral beams, extreme ultraviolet (EUV) beams in the range of 5-20 nm, and radiation having wavelengths in the range of 20-100 nm. 105. The apparatus of embodiment 104, configured.
106. An apparatus for measuring information related to at least one feature in a semiconductor device substrate, the at least one feature being at least partially obscured by a layer comprising metal, thereby measuring information related to the at least one feature. An optical signal for measuring information to be transmitted is blocked from reaching the feature, and the device
An energy delivery system configured to modify at least one portion of the layer to increase the transparency of at least one portion such that at least a portion of the optical signal is associated with the at least one feature. An apparatus comprising an energy delivery system capable of propagating through at least one portion of a layer to measure information on the layer.
107. 107. An apparatus according to embodiment 106, wherein the energy delivery system is configured to emit radiation and/or particles for modifying at least one portion of the layer comprising metal.
108. The energy delivery system modifies at least one portion of the metal-containing layer in the presence of the reaction medium to chemically transform at least one portion of the layer to change the chemical composition of the at least one portion. 107. An apparatus according to embodiment 106, configured to.
109. The energy delivery system is configured to provide an ion beam to saturate the metal-comprising layer with other atoms, ions or molecules to increase the transparency of at least one portion of the metal-comprising layer. 108. The apparatus according to embodiment 107.
110. The energy delivery system includes an anodization system configured to provide an electric field potential between a layer comprising a metal and an electrode that generates an electric field, the apparatus chemically oxidizing at least one portion of the layer 108. An apparatus according to embodiment 107, configured to provide a reaction medium for transforming to change the chemical composition of at least one portion.
111. A method for enabling measuring information related to at least one feature in a semiconductor device substrate, wherein the at least one feature is at least partially obscured by a layer comprising carbon, thereby at least An optical signal for measuring information associated with one feature is blocked from reaching the feature, the method comprising:
at least one of the layers by emitting a beam that causes a phase change in the carbon and/or an increased concentration of tetravalent (sp3-coordinated) carbon atoms in at least one portion of the layer by an energy delivery system; A method comprising modifying a portion to increase the transparency of at least one portion.
112. A method for enabling measuring information related to at least one feature in a semiconductor device substrate, wherein the at least one feature is at least partially obscured by a layer comprising a metal, whereby at least An optical signal for measuring information associated with one feature is blocked from reaching the feature, the method comprising:
modifying at least one portion of a metal-comprising layer with an energy delivery system to increase the transparency of at least one portion, whereby an optical signal for measuring information associated with at least one feature. at least a portion of is capable of propagating through at least one portion of the metal-containing layer.

[000323] Computer program instructions may be stored on a computer-readable medium to cause a computer or other programmable data processing apparatus to function in a specific fashion such that the instructions stored on the computer-readable medium cause the block diagrams and /or an article of manufacture is manufactured that includes instructions for performing the functions/acts specified in one or more blocks of the flowcharts.

[000324] The tangible non-transitory computer-readable medium can be an electronic, magnetic, optical, electromagnetic or semiconductor data storage system, apparatus or device. More specific examples of computer-readable media include portable computer diskettes, random access memory (RAM) circuits, read-only memory (ROM) circuits, erasable programmable read-only memory (EPROM or flash memory) circuits, and portable compact disc readers. These include dedicated memory (CD-ROM) and portable digital video disk read-only memory (DVD/Blu-ray).

[000325] Computer program instructions are loaded into a computer and/or other programmable data processing apparatus to cause a sequence of operational steps to be performed on the computer and/or other programmable apparatus to perform a computer-implemented process. may be implemented such that instructions executing on a computer or other programmable device perform the functions/acts specified in one or more blocks of the block diagrams and/or flowchart illustrations. provide steps for

[000326] Accordingly, the present invention may be embodied in the form of hardware and/or software (including firmware, resident software, microcode, etc.) running on a processor, collectively referred to as "circuits," "modules." ” or similar terms.

[000327] It should also be noted that, in some alternative implementations, the functions/acts noted in the blocks may occur out of the order noted in the flowcharts. For example, two blocks shown in succession may in fact be executed substantially concurrently, or the blocks may sometimes be executed in reverse order, such that the required functionality/operations can depend on Additionally, the functionality of a given block of the flowcharts and/or block diagrams may be divided into multiple blocks, and/or the functionality of two or more blocks of the flowcharts and/or block diagrams may be at least partially combined. obtain. Finally, other blocks may be added/inserted between the illustrated blocks.

[000328] While specific examples of the disclosure have been described above, it will be appreciated that the disclosure may be practiced otherwise than as described. The descriptions above are intended to be illustrative, not limiting. Accordingly, as will be apparent to one skilled in the art, modifications can be made to the disclosure as set forth without departing from the scope of the claims set forth below.

Claims (15)

An apparatus for measuring information related to at least one feature in a semiconductor device substrate, said at least one feature being at least partially obscured by a carbon layer comprising amorphous carbon, whereby said at least one an optical signal for measuring said information associated with one feature is blocked from reaching said feature, said apparatus comprising:
An energy delivery system configured to modify at least one portion of the carbon layer to make the at least one portion more transparent, whereby at least a portion of the optical signal is transmitted from the at least an energy delivery system capable of propagating through the at least one portion of the carbon layer to measure the information related to a feature, the energy delivery system being capable of propagating through the at least one portion of the carbon layer; An apparatus configured to emit a beam to modify said at least one portion of said carbon layer by causing an increase in the concentration of tetravalent (sp3 coordinated) carbon atoms in the portion. 2. The apparatus of claim 1, wherein the energy delivery system comprises at least one of at least one pulsed laser source for emitting radiation and/or at least one source of a focused beam of energetic particles. The at least one laser is
visible and/or infrared laser pulses with pulse durations ranging from 5 fs to 500 ps;
configured to emit one or more of: an ultraviolet laser pulse having a pulse duration ranging from 1 ps to 500 ns; and a soft X-ray to DUV laser pulse having a pulse duration ranging from 1 fs to 100 ns. 2. The device according to 2 . The at least one laser is configured to emit an initial pulse train comprising at least one laser pulse of a first pulse duration, and at least one laser pulse of a second shorter pulse duration. 3. The apparatus of claim 2 , further configured to emit a subsequent pulse train comprising: 3. The apparatus of claim 2 , wherein the at least one pulsed laser source is configured to emit radiation having a peak emission fluence or intensity below the ablation threshold of the carbon layer. 2. The apparatus of claim 1, wherein the energy delivery system is configured to emit radiation and/or particles for pulsed heating of the at least one portion of the carbon layer. The energy delivery system emits one or more of a beam comprising an electron beam, an ion beam, a neutral beam, an extreme ultraviolet (EUV) beam in the range of 5-20 nm, and radiation having a wavelength in the range of 20-100 nm. 7. The device of claim 6 , wherein the device is configured to: 13. Further comprising a feedback control system configured to measure one or more parameters of said at least one portion of said carbon layer and control said energy delivery system based on said one or more parameters. 1. The device according to claim 1. The energy delivery system is configured to emit radiation and/or particles to modify the transparency of the at least one portion of the carbon layer to a depth less than the entire thickness of the carbon layer. Item 1. The device according to item 1. 2. The apparatus of claim 1, further comprising a layer deposition system for depositing said carbon layer on said substrate. 2. The apparatus of claim 1, further comprising a debris removal system for removing debris particles generated during said modification from the surface of said carbon layer. 2. The method of claim 1, further comprising a chamber configured to hold a cooling liquid, wherein the semiconductor device substrate is at least partially immersed in the cooling liquid during irradiation of the beam by the energy delivery system. device. A method for enabling measuring information related to at least one feature in a semiconductor device substrate, said at least one feature being at least partially obscured by a carbon layer comprising amorphous carbon, said optical signals for measuring information related to the at least one feature are prevented from reaching the feature, the method comprising:
modifying said at least one portion of said carbon layer by radiating a beam that causes an increase in the concentration of tetravalent (sp3 coordinated) carbon atoms in at least one portion of said carbon layer with an energy delivery system; , whereby at least a portion of the optical signal can propagate through the at least one portion of the carbon layer to determine the information associated with the at least one feature. A method comprising increasing the transparency of a portion. 14. A computer program product comprising instructions which, when run on at least one processor, cause said at least one processor to control an apparatus to perform the method of claim 13 . 15. A computer readable storage medium containing a computer program according to claim 14 .

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