KR101724636B1

KR101724636B1 - Method for manufacturing plate and probe card

Info

Publication number: KR101724636B1
Application number: KR1020150036945A
Authority: KR
Inventors: 박영근; 김광호
Original assignee: (주)엠투엔
Priority date: 2015-03-17
Filing date: 2015-03-17
Publication date: 2017-04-10
Also published as: KR20160111791A

Abstract

A manufacturing method of a plate portion is disclosed, wherein the manufacturing method of the plate portion includes: forming a first laminate in which a lower portion of the plurality of interconnecting structures is vertically disposed; Forming a second laminate in which upper portions of the plurality of interconnecting structures are vertically disposed; Forming n stacked bodies stacked between the first stacked body and the second stacked body and at least a part of the plurality of interconnected structures being arranged through the stacked bodies; And laminating the first laminate, the second laminate and the n laminated bodies.

Description

METHOD FOR MANUFACTURING PLATE AND PROBE CARD,

The present invention relates to a method of manufacturing a plate portion and a probe card.

In general, a semiconductor package is finally subjected to characteristic measurement or defect inspection through various electrical tests by an inspection apparatus. At this time, a probe card is used to electrically connect the circuit pattern of the inspection printed circuit board provided in the inspection apparatus with the semiconductor package.

Generally, such a probe card includes a conductive bump into which a probe and a probe are inserted, and a method of manufacturing such a probe card is disclosed in Patent No. 10-0823310. The disclosed probe card manufacturing method forms the conductive bump at a predetermined height, and then forms a probe insertion hole in the formed conductive bump to form a conductive bump into which the probe is inserted.

According to the conductive bump forming method, the height of the conductive bump is set before the probe insertion hole is formed. When the height of the probe changes, the conductive bump does not correspond to the height variation of the probe There was a problem.

SUMMARY OF THE INVENTION It is an object of the present invention to provide a method of manufacturing a plate portion that realizes a plate portion capable of actively responding to a change in height of an interconnect structure.

According to a first aspect of the present invention, there is provided a method of manufacturing a semiconductor device, the method comprising: forming a first laminate in which a lower portion of the plurality of interconnect structures is vertically penetrated; Forming a second laminate in which upper portions of the plurality of interconnecting structures are vertically disposed; Forming n stacked bodies stacked between the first stacked body and the second stacked body and at least a part of the plurality of interconnected structures being arranged through the stacked bodies; And laminating the first laminate, the second laminate, and the n laminated bodies.

According to the above-mentioned problem solving means of the present invention, when the plate portion is formed by the lamination of the first laminate, the second laminate and the n laminate, when the height of the interconnection structure changes, The height of the plate portion can be set by adjusting the number of laminated layers of the first laminate, the second laminate and the n laminate corresponding to the height.

BRIEF DESCRIPTION OF THE DRAWINGS FIG. 1 is a schematic diagram for explaining a step of forming a first laminate according to an embodiment of the present invention; FIG.
2A is a schematic diagram for explaining a step of laminating a first laminate and n laminates according to an embodiment of the present invention
Fig. 2B is a schematic diagram for explaining the step of cutting the laminated first laminate and the n laminate.
3 is a schematic cross-sectional view showing a plate portion in which an interconnecting structure is penetrated.
4 is a schematic cross-sectional view showing a plate portion in which an interconnecting structure is penetrated to explain a plate portion including n stacked bodies formed according to another embodiment of the present invention;
5 is a schematic cross-sectional view for explaining an interconnect structure.
Figure 6 (a) is a schematic perspective view of the contactor of the interconnect structure shown in Figure 5;
Figure 6 (b) is a schematic perspective view of the interconnect structure shown in Figure 5.
6C is a cross-sectional view of the interconnect structure shown in FIG. 6B, in which the first contact portion and the second contact portion, which are in contact with each other to show a portion where the first contact portion and the second contact portion are in contact with each other, As shown in Fig.
7 is a schematic sectional view for explaining various shapes of the tip portion.
8 (a) is a schematic perspective view of a contactor according to another embodiment of the present invention.
8 (b) is a schematic perspective view of an interconnect structure according to another embodiment of the present invention.
8C is a schematic cross-sectional view of a portion of the interconnect structure shown in FIG. 8B where the first contact portion and the second contact portion are contacted in the thickness direction.
9 (a) is a schematic perspective view of a contactor according to another embodiment of the present invention.
Figure 9 (b) is a schematic perspective view of an interconnect structure according to another embodiment of the present application.
FIG. 9C is a schematic cross-sectional view of a portion of the interconnect structure shown in FIG. 9B where the first contact portion and the second contact portion are contacted in the thickness direction. FIG.
FIG. 10 is a schematic diagram for explaining a step of forming a contactor according to an embodiment of the present invention; FIG.
FIG. 11 is a schematic diagram for explaining a step of forming a contactor having an inclined surface on an entire surface according to an embodiment of the present invention.

Hereinafter, embodiments of the present invention will be described in detail with reference to the accompanying drawings so that those skilled in the art can easily carry out the present invention. It should be understood, however, that the present invention may be embodied in many different forms and should not be construed as limited to the embodiments set forth herein. In the drawings, the same reference numbers are used throughout the specification to refer to the same or like parts.

Throughout this specification, when a part is referred to as being "connected" to another part, it is not limited to a case where it is "directly connected" but also includes the case where it is "electrically connected" do.

Throughout this specification, when a member is " on " another member, it includes not only when the member is in contact with the other member, but also when there is another member between the two members.

Throughout this specification, when an element is referred to as "including " an element, it is understood that the element may include other elements as well, without departing from the other elements unless specifically stated otherwise. The terms "about "," substantially ", etc. used to the extent that they are used throughout the specification are intended to be taken to mean the approximation of the manufacturing and material tolerances inherent in the stated sense, Accurate or absolute numbers are used to help prevent unauthorized exploitation by unauthorized intruders of the referenced disclosure. The word " step (or step) "or" step "used to the extent that it is used throughout the specification does not mean" step for.

Throughout this specification, the term " combination thereof " included in the expression of the machine form means one or more combinations or combinations selected from the group consisting of the constituents described in the expression of the machine form, And the like.

For reference, the terms related to direction and position (upper, upper, lower, lower, etc.) in the description of the embodiments of the present application are set based on the arrangement state of each structure shown in the drawings. For example, referring to Fig. 2A, the 12 o'clock direction is generally on the upper side, the upper side generally facing the 12 o'clock direction is the upper side, the 6 o'clock side is on the lower side in general, .

The present invention relates to a method of manufacturing a plate portion in which a plurality of interconnecting structures are arranged to be penetrated.

Hereinafter, a plate portion according to one embodiment of the present invention (hereinafter referred to as " the present manufacturing method ") will be described.

This manufacturing method comprises the steps of: forming a first laminate (21) in which a lower portion of a plurality of interconnecting structures (1) is vertically disposed; a step of forming a plurality of interconnecting structures (1) 2 stacked body 24 in which at least a part of the plurality of interconnecting structures 1 is stacked between the first stacked body 21 and the second stacked body 24, 22, and 23) and laminating the first laminate, the second laminate, and the n laminate (22, 23).

According to the present manufacturing method, the plate portion can be formed by stacking the first stack body 21, the second stack body 24, and the n stacked bodies 22, 23. Accordingly, the number of the stacked bodies that realize the plate portion can be set according to the height required for the plate portion, and the height required for the plate portion can be easily realized.

The present manufacturing method may also include a step of forming an insulating thin film 93 on the surfaces of the first laminate 21, the second laminate 24 and the n laminate 22, 23 . Thus, the insulating thin film 93 may be formed on the surfaces of the first laminate 21, the second laminate 24, and the n laminate 22, 23, respectively.

The insulating thin film 93 is formed in such a manner that when an electrical signal flows to the interconnect structure 1 disposed through the first stack body 21, the second stack body 24 and the n stacked bodies 22, 23, It is possible to prevent the electrical signal from leaking, and to improve the electrical transmission of the electrical signal.

Hereinafter, this production method will be described in more detail.

The step of forming the first stack body 21 may include the step of preparing the substrate 91 as shown in Fig. 1 (a).

1 (b), the step of forming the first laminate 21 includes a step of forming a hole 95 (corresponding to the lower portion of each of the plurality of interconnecting structures 1) on the substrate 91 ) To form a plurality of patterned photoresist layers (92).

The shape of the hole 95 corresponding to the lower portion of the interconnecting structure 1 may mean that the hole 95 has a shape in which the lower portion of the interconnecting structure 1 is penetrated. In other words, the hole 95 may have a shape corresponding to the shape of the cross section of the tip portion 121 of the contactor 12.

In addition, the step of forming the first laminate 21 may include the step of forming a plurality of holes 95 based on the photoresist layer 92, as shown in Fig. 1 (c) .

The step of forming the first laminate 21 includes the step of forming an insulating thin film 93 on the surface of the substrate 91 on which a plurality of holes 95 are formed as shown in FIG. can do.

In the step of forming the insulating thin film 93, the insulating thin film 93 may be formed using thermal oxidation and LPCVD process, and further, the thermally oxidizing and spin coating processes may be performed. Illustratively, the insulating thin film 93 may be a silicon oxide film or a nitride film. For reference, the surface of the substrate 91 may mean the outer surface and the inner surface of the substrate 91, as shown in Fig. 11 (d).

Further, as described above, the present manufacturing method includes the step of forming the second laminate 24. The step of forming the second laminate 24 may be performed similarly or in the same manner as the step of forming the first laminate 21. Therefore, the description of the step of forming the second laminate 24 will be explained with reference to Fig.

Referring to FIG. 1 (a), the step of forming the second laminate 24 may include the step of preparing the substrate 91.

1B, the step of forming the second laminate 24 includes a step of forming a hole 95 having a shape corresponding to the top of each of the plurality of interconnect structures 1 on the substrate 91, And forming a plurality of patterned photoresist layers 92.

Also, the holes 95 formed in this step may have a shape corresponding to the upper portion 111 of the connector 11.

In other words, the hole 95 formed in the process of forming the first stack body 21 corresponds to the shape of the cross section of the tip portion 121 of the contactor 12, and the second stack body 24 The holes 95 formed during the process correspond to the shape of the cross section of the upper portion 111 of the connecting body 11 and the holes 95 formed during the process of forming the first layered body 21, The shape of the holes 95 formed during the process of forming the body 24 may be different.

1 (c), the step of forming the second laminate 24 may include the step of forming a plurality of holes 95 based on the photoresist layer 92. [

1D, the step of forming the second laminate 24 includes a step of forming an insulating thin film 93 on the surface of the substrate 91 on which a plurality of holes 95 are formed .

Further, the step of forming the n stacked bodies may include the step of forming one of the n stacked bodies.

The step of forming a laminate includes the steps of preparing a substrate, forming a plurality of holes of a shape corresponding to at least a part of each of the plurality of interconnecting structures arranged through the substrate in one laminate, Forming a plurality of holes on the substrate based on the photoresist layer.

In addition, the step of forming one laminate may include the step of forming an insulating thin film on the surface of the substrate on which a plurality of holes are formed. The step of forming one layered body in this manner may be similar to or the same as the step of forming the first layered body 21 described above.

Further, the step of forming n stacked layers may include the step of forming another stacked layer. The step of forming another laminate may be performed similarly to the step of forming one laminate.

2A, the step of laminating the first layered product 21, the second layered product 24 and the n laminated layers 22, 23 in this manufacturing method is the same as that of the first layered product 21) and n stacked bodies (22, 23).

Illustratively, the first stack 21, the second stack 24 and the n stacks 22, 23 each comprise a plurality of holes 95 through which the interconnect structure 1 is disposed 2A, the first stack body 21 and the n stacked bodies 22 and 23 may be stacked up and down so that a plurality of holes 95 formed in each of the first stack body 21 and the n stacked bodies 22 and 23 overlap with each other in the vertical direction have.

At this time, the first layered product 21 and the n stacked layers 22 and 23 can be laminated and bonded by a polymer bonding process at high temperature and high pressure.

Accordingly, an adhesive layer made of a polymer material can be formed between the first stack body 21 and each of the n stacked bodies 22, 23.

The step of laminating the first laminated body 21, the second laminated body 24 and the n laminated bodies 22 and 23 is a step of laminating the first laminated body 21 and the second laminated body 21 as shown in Fig. cutting the n stacked bodies 22 and 23 along the partitions so that the plurality of holes 95 are separated from each other to form a plurality of block plates.

Such cutting can be performed by a dicing process or a bridging process.

The step of laminating the first layered product 21, the second layered product 24 and the n laminated layers 22 and 23 includes a step of penetrating each of the interconnecting structures through the plurality of formed block plates .

Also, referring to FIG. 3, a plurality of block plates on which the interconnect structure is disposed may be aligned. Illustratively, the block plates can be arranged so that the interconnect structures disposed in each are arranged in a checkered pattern. As such, the second stack body 24 may be laminated on the plurality of block plates, as shown in FIG. 3, so that the second stack body 24 is mounted on top of the aligned interconnect structure.

The second laminate 24 can be laminated and bonded onto the n stacks 22, 23 by the above-described high-temperature, high-pressure type polymer bonding process. Further, the second laminate 24 can be fixed on the n stacked bodies 22, 23 by fixing bolts or epoxy.

Further, in another embodiment of the present manufacturing method, in the step of forming n stacks, the step of forming one stack may include the steps of preparing a substrate 91, And forming a single hole 221 through which the structure 1 is disposed. In the step of forming the n stacked bodies, the step of forming the other stacked body may include a step of preparing the substrate 91, a step of arranging the plurality of interconnecting structures 1 in the substrate 91, And forming a hole 231. The plate portion implemented according to this other embodiment may be as shown in Fig. For reference, the interconnect structure 1 is also shown in Fig.

Hereinafter, a probe card (hereinafter referred to as " probe card ") according to an embodiment of the present invention will be described. However, the same reference numerals are used for the same or similar components as those described in the manufacturing method of the plate portion according to one embodiment of the present invention, and the description thereof will be simplified or omitted.

The probe card includes a plurality of interconnecting structures (1).

Referring to FIG. 5, the interconnect structure 1 may include a contactor 12.

The contactor 12 may be formed through a MEMS process. Accordingly, the contactor 12 can be realized to have various fine shapes through an electroplating process using a semiconductor fine patterning process as opposed to a conventional interconnect structure, and can have a fine pitch. This will be described in detail below.

Referring to FIG. 5, the contactor 12 includes a tip portion 121 that is in contact with a semiconductor package.

Illustratively, when the inspection of the semiconductor package is performed, the tip portion 121 may contact the semiconductor package to transfer an electrical signal to the semiconductor package or receive an electrical signal from the semiconductor package.

6 (a), each of the front and rear surfaces of the tip portion 121 may be a flat surface.

7 (a) to (e), the shape of the cross section of the tip portion 121 may vary.

In the conventional interconnect structure, since the front and rear surfaces are three-dimensional rather than planar, further processing is required to process the end portions in contact with the semiconductor package in various shapes.

However, according to the interconnect structure 1, the front and rear surfaces of the tip portion 121 are flat, and the contactor 12 including the tip portion 121 is subjected to an additional process Can be easily produced. In other words, since the interconnection structure 1 can be manufactured through a simple process, it is possible to secure a competitive price of the process cost as compared with the conventional interconnection structure.

Further, as described above, since the contactor 12 is manufactured through the MEMS process, the tip portion 121 of the contactor 12 can be formed to have a fine pitch

5, the contactor 12 includes a first contact portion 122 extending upward from the tip portion 121. The first contact portion 122 extends in the upward direction. The first contact portion 122 can exchange electrical signals with the tip portion 121. The first contact portion 122 may be in contact with the second contact portion 112 of the connector 11 described below

Referring to FIG. 5, the interconnect structure 1 may include a connector 11. The connector 11 connects the contactor 12 to the printed circuit board (pcb substrate).

Also, the connector 11 can be formed through a MEMS process. Thus, the connecting body 11 can have various fine shapes and have a fine pitch, as described above.

The connector 11 will be described in more detail.

5 and 6, the connector 11 includes a second contact portion 112. The second contact portions 112 overlap with each other along the vertical direction with the first contact portions 122 of the contactor 12 and are in surface contact with each other.

Since the first contact portion 122 and the second contact portion 112 are in contact with each other, the contactor 12 and the connection body 11 can exchange electrical signals stably.

As described above, since the first contact portion 122 and the exempt material 1 contact portion 112 are in surface contact with each other, the interconnection structure can improve resistance characteristics and current characteristics as compared with the conventional interconnection structure.

Specifically, the conventional interconnect structure includes an upper probe pin, a lower probe pin spaced apart from the upper probe pin and disposed below the upper probe pin, a spring surrounding the upper probe pin and the lower probe pin, And a housing surrounding the pin and spring.

According to such an interconnect structure, the transmission of an electrical signal is made along the contact point between the upper probe pin, the spring, the housing and the lower probe pin formed through the tilting of the spring. In addition, according to this, since the movement path of the electrical signal is formed sequentially or in reverse order to the upper probe pin, the spring, the housing, and the lower probe pin, the movement path of the electrical signal is complicated. Further, since the path of the electrical signal is complicated, the inspection time of the semiconductor package may be long, and the impedance matching section may be reduced.

In addition, in the conventional interconnect structure, a housing must be provided for the transmission of electrical signals. In order to transmit electrical signals, a tilting of the spring is required. In order to induce the tilting of the spring, the overall length of the interconnect structure is required to be more than a certain length, and a spring located between the upper probe pin and the lower probe pin And the overall length of the interconnect structure is increased due to the length. Such a requirement for length limits the scratch length of the interconnect structure. In addition, the increase in length required for the interconnect structure also caused a problem of increasing the travel time of the electrical signal.

Further, according to such an interconnect structure, an electrical signal is transmitted by point contact between the upper probe pin, the spring, the housing, and the lower profile pin, so that the occurrence rate of the noise during the transmission of the electrical signal is high and the transferability is low.

However, according to the interconnect structure, since the contactor 12 and the connector 11 are in surface contact in the elastic body 13, the length of the interconnect structure can be minimized. In addition, the stroke length can be maximized.

Thus, by improving the stroke length while minimizing the overall length of the interconnect structure, high frequency bandwidth, low inductance, and high current electrical characteristics can be secured.

In other words, in the conventional interconnect structure, in view of signal transfer, the upper probe pin, the housing, and the lower probe pin are in point contact to form two contact portions. On the other hand, in the case of this interconnecting structure, since the upper probe pin and the lower probe pin are in surface contact and contact directly through one contact having a wide contact area, the contact resistance, impedance and self inductance can be reduced to improve current flowability Therefore, it can cope with high frequencies.

6 (a) and 6 (c), the first contact portion 122 is inclined at an angle of 3 degrees with respect to its thickness (at 3 o'clock in FIG. May be formed along the longitudinal direction. Referring to FIGS. 2 (b) and 2 (c), the second contact portion 112 may have a shape that is symmetrical with the first contact portion 122 of the contactor 12.

Thus, the first contact portion 122 and the second contact portion 112 can always maintain the minimum contact surface, and through this, the electrical contact between the first contact portion 122 and the second contact portion 112 Can be improved.

8 and 9, each of the first contact portions 122 may be recessed in a thickness direction of at least a part of the inclined surfaces thereof. 4 and 5, the second contact portion 112 may have a shape that is symmetrical with the first contact portion 122 of the contactor 12. According to this configuration, the contact between the first contact portion 122 and the second contact portion 112 can be made more tightly.

In addition, the connector 11 includes an upper portion 111 extending upward from the second contact portion 112.

The upper portion 111 may be in contact with the above-described printed circuit board.

The upper portion 111 may be a flat surface and a rear surface, respectively. Thus, the connector 11 can be easily manufactured.

The interconnecting structure 1 also includes an elastic body 13 that surrounds the first contact portion 122 of the contactor 12 and the second contact portion 112 of the connector 11. [

The elastic body 13 can maintain the contact between the first contact portion 122 and the second contact portion 112. [

In other words, the contact between the first contact portion 122 and the second contact portion 112 can be made in the elastic body 13. According to such an interconnecting structure 1, a housing surrounding the first contact portion 122, the second contact portion 112, and the elastic body 13 is not required.

5, the lower end of the elastic body 13 is supported by the lower step 123, and the upper end of the elastic body 13 is supported by the upper end of the upper step 113. As shown in FIG.

Illustratively, the elastic body 13 can be a microspring.

Further, the probe card includes a plate portion in which a plurality of the above-described interconnecting structures 1 are passed through.

The plate portion can be formed by the above-described manufacturing method.

Referring to FIG. 3, the plate portion includes a first stack body 21 having a lower portion of each of the plurality of main interconnect structures disposed vertically.

At this time, as shown in FIG. 3, the tip portion 121 of the contactor 12 may be vertically penetrated through the first laminate 21. At this time, the tip portion 121 may be arranged to protrude downward from the lower end thereof.

3, the plate portion includes a second stack body 24 in which the upper portions of each of the plurality of main interconnect structures 1 are vertically disposed.

As shown in FIG. 3, the upper portion 111 of the connecting body 11 of the present interconnection structure 1 may be vertically penetrated through the second layered body 24. At this time, the upper end of the upper part 111 may protrude upward and may be vertically disposed.

3, the plate portion is formed by stacking n stacks 22 of the laminated body 21, which are laminated between the first laminate 21 and the second laminate 24 and in which at least a part of the interconnect structure 1 is disposed to pass therethrough , 23).

Illustratively, each of the n stacked bodies 22, 23 may be a third stacked body 22 and a fourth stacked body 23. 3, the first contact portion 122 and the lower step portion 123 of the contactor 12 may be passed through the third layered body 22. When an external force is applied to the interconnect structure 1 in the downward direction, the lower end of the lower step portion 123 can be supported on the upper surface of the first stack body 21. [

The second contact portion 112 and the upper step portion 113 of the connector 11 may be disposed in the fourth stacked body 23. When an external force is applied to the interconnect structure 1 in the upward direction, the upper end of the upper step portion 113 can be supported on the lower surface of the second stack body 24.

3, each of the n stacked bodies 22 and 23 may include a plurality of holes 221 and 231 through which at least a part of each of the plurality of interconnecting structures 1 is inserted.

In other words, as shown in FIG. 3, the third stack body 22 may include a hole 221 through which the first contact portion 122 is disposed. In addition, the fourth stack body 23 may include a plurality of holes 231 through which the second contact portions 112 are disposed.

4, each of the n stacks 22, 23 includes one hole 221, 231 through which at least a portion of each of the plurality of interconnecting structures 1 is disposed, and one hole 221, 232 formed along the outer periphery of the holes 221,

In addition, the first laminate 21, the second laminate 24, and the n laminate members 22 and 23 can be formed through a MEMS process. Accordingly, it is possible to manufacture a micro-unit tolerance, and even if the interconnection structure 1 has a fine pitch, it can be combined with the interconnection structure 1 having a fine pitch.

Further, the plate portion may include an adhesive layer formed between the first laminate 21, the second laminate 24, and the n laminate members 22, 23, respectively. The adhesive layer may be made of a polymer material.

In this probe card, an insulating thin film may be formed on the surfaces of the first layered product 21, the second layered product 24, and the n laminated layers 22, 23, respectively.

The surface of each of the first layered product 21, the second layered product 24 and the n layered products 22 and 23 includes the first layered product 21, the second layered product 24, May mean the outer surface and inner surface of each of the stacked bodies 22 and 23. [ As a result, when an electrical signal flows through the interconnect structure 1 disposed through the first stack body 21, the second stack body 24, and the n stacked bodies 22, 23, It is possible to prevent the electric signal from being transmitted and improve the electric signal transmission.

On the other hand, the interconnect structure 1 may be formed in the following manner

FIG. 10 is a schematic conceptual view for explaining a step of forming a contactor according to an embodiment of the present invention, and FIG. 11 is a cross-sectional view illustrating a step of forming a contactor having a slope on the front surface according to an embodiment of the present invention FIG.

The method of forming the interconnect structure 1 may include forming the contactor 12.

Referring to FIG. 10 (a), the step of forming the contactor 12 may include the step of preparing the substrate 81. The substrate 81 may be a silicon wafer.

10 (b), the step of forming the contactor 12 may include forming the seed layer 82. As shown in FIG. 10 (b), the seed layer 82 may be formed on the substrate 81.

As a result, a metal layer 84 described later can be effectively deposited. If the seed layer 84 is not deposited then the metal layer 84 is difficult to deposit on the substrate 81 and the metal layer 84 is deposited on the substrate 81 , At least a part of the metal layer 84 can be separated from the substrate 81. [ Therefore, it is preferable that a step of forming the seed layer 82 on the substrate 81 is performed.

For example, the seed layer 82 may be gold or copper, and the seed layer 340 may be formed by a physical vacuum deposition method used in a general semiconductor manufacturing process such as evaporation or sputtering .

10 (c), the step of forming the contactor 12 may include forming a patterned photoresist layer 83 on the substrate 81 that corresponds to the shape of the contactor 12 . The patterning corresponding to the shape of the contactor 12 is exemplified by the patterning of the contactor 12 shown in each of Figs. 6, 8, and 9 in a direction perpendicular to the length (see Fig. 2 8 o'clock direction) may be patterned. In other words, the photoresist layer 83 may be one in which the tip portion 121, the lower step portion 123, and the first contact portion 122 are patterned.

Exemplarily, an entire photoresist layer 83 is deposited on the substrate 81, and then an exposure and development process is performed using a mask having a pattern corresponding to the shape of the contactor 12 , A patterned photoresist layer 83 corresponding to the shape of the contactor 12 can be formed.

10 (d), the step of forming the contactor 12 may include forming the metal layer 84 based on the patterned photoresist layer 83. As shown in FIG. The metal layer 84 may be made of a material including at least one of Ni and Ni alloys, Au, Cu, and Rho. The metal layer 84 may also be formed by one or more of a plating process, a chemical vapor deposition process (CVD), and a physical vapor deposition process (PVD).

10 (e), the step of forming the contactor 12 may include polishing the metal layer 84.

The step of polishing the metal layer 84 may polish the metal layer 84 so that the metal layer 84 corresponds to the height of the photoresist layer 83. The metal layer 84 may be polished using a chemical mechanical polishing (CMP) process. According to the chemical mechanical polishing, the thickness of the metal layer 84 can be adjusted. Accordingly, the thickness of the metal layer 84 can have a precise value.

The predetermined thickness of the metal layer 84 may mean the thickness value of the contactor 12.

10 (f), the step of forming the contactor 12 may include the step of removing the photoresist layer 83 and the substrate 81. As shown in FIG. Accordingly, only the metal layer 84 can be left, and the remaining metal layer 84 can be the contactor 12.

In addition, in the step of removing the photoresist layer 83 and the substrate 81, a plurality of contactors 12 formed on the substrate 81 are connected, and the plurality of contactors 12 are connected to each other in the form of a bridge Can be. In this case, the step of removing the photoresist layer 83 and the substrate 81 may separate the plurality of contactors 12 interconnected with each other in the form of a bridge.

11, when the contactor 12 has an inclined surface on its front surface, the step of forming the contactor includes the steps of preparing the substrate (see FIGS. 10 (a) and 11 (a) (See FIGS. 11 (b-1) to 11 (b-5)) between the step of forming the photoresist layer (see FIG. . &Lt; / RTI >

Specifically, the step of forming the inclined surface may include the step of depositing the wet etching mask thin film 86 on the substrate 81 as shown in (b-1) of FIG.

In addition, the step of forming the inclined surface may include the step of forming the patterned mask layer 87, as shown in (b-2) of FIG.

In addition, the step of forming the inclined surface may include patterning the wet etching mask thin film 86 based on the patterned mask layer 87, as shown in (b-3) of FIG.

Further, the step of forming the inclined surface may include a step of wet-etching the substrate with anisotropic etching liquid, as shown in (b-4) of Fig. Through this step, the substrate 81 may be formed with an inclined surface. The anisotropic etchant may be one of a KOH solution, an IPA solution and a TMAH solution.

In addition, the step of forming the inclined surface may include the step of forming the seed layer 82 as shown in (b-5) of Fig.

Thereafter, a patterned photoresist layer 83 corresponding to the shape of the contactor 12 is formed on the substrate 81, a metal layer 84 is formed on the basis of the patterned photoresist layer 83 A step of polishing the metal layer 84, and a step of removing the photoresist layer 83 and the substrate 81 may be performed.

Accordingly, the contactor 12 having the inclined surface on the front surface can be realized. When an inclined surface is to be formed on the first contact portion 122 of the contactor 12 to be implemented, an inclined surface may be formed with respect to an area where the first contact portion 122 is to be formed.

In addition, a method of forming the interconnect structure 1 includes forming the dms, the interconnect 11. The step of forming the connector 11 may be performed in a manner similar to or the same as the step of forming the contactor 12. A detailed description thereof will be omitted.

The method of forming the interconnect structure 1 also includes the step of contacting the contactor 12 with the interconnect body 11. [ The first contact portion 122 and the second contact portion 112 of the contactor 12 and the connector 11 overlap each other along the vertical direction in the step of contacting the contactor 12 with the connector 11, Can be brought into contact with each other.

The method of forming the interconnect structure 1 further comprises disposing the elastic body 13 along the periphery of the first contact portion 122 of the contactor 12 and the second contact portion of the connector 11, Step < / RTI >

It will be understood by those of ordinary skill in the art that the foregoing description of the embodiments is for illustrative purposes and that those skilled in the art can easily modify the invention without departing from the spirit or essential characteristics thereof. It is therefore to be understood that the above-described embodiments are illustrative in all aspects and not restrictive. For example, each component described as a single entity may be distributed and implemented, and components described as being distributed may also be implemented in a combined form.

The scope of the present invention is defined by the appended claims rather than the detailed description, and all changes or modifications derived from the meaning and scope of the claims and their equivalents should be construed as being included within the scope of the present invention.

1: Interconnection structure 11:
111: upper portion 112: second contact portion
113: upper step portion 12: contactor
121: tip portion 122: first contact portion
123: lower step portion 13:
21: first laminate 22: third laminate
221: hole 222: rim
23: fourth laminate 231: hole
232: rim 24: second laminate
81: substrate 82: seed layer
83: photoresist layer 84: metal layer
86: wet etching mask thin film 87: mask layer
91: substrate 92: photoresist layer
93: insulated thin film 95: hole

Claims

1. A method of manufacturing a plate portion in which a plurality of interconnecting structures are disposed through,
Forming a first laminate in which a lower portion of the plurality of interconnecting structures is vertically disposed;
Forming a second laminate in which upper portions of the plurality of interconnecting structures are vertically disposed;
Forming n stacked bodies stacked between the first stacked body and the second stacked body and at least a part of the plurality of interconnected structures being arranged through the stacked bodies; And
And stacking the first laminate, the second laminate, and the n stacks,
The step of laminating the first laminate, the second laminate and the n laminates
Laminating the first stacked body and the n stacked bodies; And
And a step of forming a plurality of block plates by cutting the stacked first laminate and the n stacked bodies along a partition wall formed between a plurality of holes through which the interconnect structure is disposed .

The method according to claim 1,
Wherein forming the first laminate comprises:
Preparing a substrate;
Forming a photoresist layer patterned on the substrate with a plurality of holes each having a shape corresponding to a lower portion of each of the plurality of interconnect structures;
And forming the plurality of holes based on the photoresist layer.

The method according to claim 1,
Wherein forming the second laminate comprises:
Preparing a substrate;
Forming a photoresist layer patterned on the substrate with a plurality of holes each having a shape corresponding to an upper portion of each of the plurality of interconnect structures;
And forming the plurality of holes based on the photoresist layer.

The method according to claim 1,
Wherein forming the n stacks comprises:
Forming a stack of one of said n stacks,
Wherein the forming of the one laminate comprises:
Preparing a substrate;
Forming a photoresist layer on the substrate patterned with a plurality of holes each having a shape corresponding to at least a portion of each of the plurality of interconnecting structures disposed through the one stacked body;
And forming the plurality of holes based on the photoresist layer.

The method according to claim 1,
Wherein forming the n stacks comprises:
Forming a stack of one of said n stacks,
Wherein the forming of the one laminate comprises:
Preparing a substrate;
And forming a hole through which the plurality of interconnecting structures are disposed on the substrate.

delete

The method according to claim 1,
Each of the first stacked body, the second stacked body and the n stacked bodies is formed with a plurality of holes through which the interconnecting structures are disposed,
In the step of laminating the first laminate and the n laminate,
Wherein the first laminated body and the n laminated bodies are laminated vertically so that the plurality of holes formed in each of the first laminated body and the n laminated bodies overlap each other in the vertical direction.

8. The method of claim 7,
Wherein the step of laminating the first laminate, the second laminate and the n laminated bodies comprises:
Disposing the interconnecting structure in each of the plurality of block plates; And
Stacking the second laminate on the plurality of block plates such that the plurality of block plates on which the interconnect structure is disposed are aligned and the second laminate is mounted on the aligned interconnect structure, Wherein the plate portion comprises a plurality of plates.

The method according to claim 1,
The step of forming the plate portion includes:
Further comprising the step of forming an insulating thin film on the surface of each of the first laminate, the second laminate and the n laminated bodies.

In the probe card,
A plurality of interconnect structures;
And a plate portion through which the plurality of interconnecting structures are disposed,
Wherein the plate portion is formed by the manufacturing method of the plate portion according to Claim 1.

11. The method of claim 10,
And each of the n stacked bodies includes a plurality of holes through which at least a part of each of the plurality of interconnecting structures is disposed.

11. The method of claim 10,
Wherein each of the n stacks includes one hole through which at least a part of each of the plurality of interconnecting structures is disposed and a rim formed along the periphery of the one hole.

11. The method of claim 10,
The interconnect structure may include:
A contactor including a tip portion in contact with the semiconductor package and a first contact portion extending upward from the tip portion;
A connecting body including a second contact portion which is in surface contact with the first contact portion of the contactor and overlaps with the first contact portion in a vertical direction and an upper portion that extends upward from the second contact portion; And
And an elastic body arranged to surround the first contact portion of the contactor and the second contact portion of the connector.

14. The method of claim 13,
Wherein the n stacked bodies are a third stacked body and a fourth stacked body,
Wherein the tip portion is disposed in the first laminate body, the first contact portion is disposed in the third laminate body, the second contact portion is disposed in the fourth laminate body, the second contact portion is disposed in the second laminate body, And the upper portion is disposed through the probe card.