KR101718788B1 - 화학 기계 연마 조성물 및 관련 방법 - Google Patents

화학 기계 연마 조성물 및 관련 방법 Download PDF

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Publication number
KR101718788B1
KR101718788B1 KR1020100112111A KR20100112111A KR101718788B1 KR 101718788 B1 KR101718788 B1 KR 101718788B1 KR 1020100112111 A KR1020100112111 A KR 1020100112111A KR 20100112111 A KR20100112111 A KR 20100112111A KR 101718788 B1 KR101718788 B1 KR 101718788B1
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KR
South Korea
Prior art keywords
chemical mechanical
mechanical polishing
polishing composition
nitrogen
providing
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Expired - Fee Related
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KR1020100112111A
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English (en)
Korean (ko)
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KR20110052519A (ko
Inventor
젠동 루
이 구오
쿠마르 레디 칸차를라-아룬
광윤 장
Original Assignee
롬 앤드 하스 일렉트로닉 머티리얼스 씨엠피 홀딩스 인코포레이티드
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Publication of KR20110052519A publication Critical patent/KR20110052519A/ko
Application granted granted Critical
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    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C09K3/1454—Abrasive powders, suspensions and pastes for polishing
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C09G1/02—Polishing compositions containing abrasives or grinding agents
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/31051—Planarisation of the insulating layers
    • H01L21/31053—Planarisation of the insulating layers involving a dielectric removal step
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321—After treatment
    • H01L21/32115—Planarisation
    • H01L21/3212—Planarisation by chemical mechanical polishing [CMP]

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Organic Chemistry (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
KR1020100112111A 2009-11-12 2010-11-11 화학 기계 연마 조성물 및 관련 방법 Expired - Fee Related KR101718788B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US12/617,140 2009-11-12
US12/617,140 US8025813B2 (en) 2009-11-12 2009-11-12 Chemical mechanical polishing composition and methods relating thereto

Publications (2)

Publication Number Publication Date
KR20110052519A KR20110052519A (ko) 2011-05-18
KR101718788B1 true KR101718788B1 (ko) 2017-03-22

Family

ID=43877853

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020100112111A Expired - Fee Related KR101718788B1 (ko) 2009-11-12 2010-11-11 화학 기계 연마 조성물 및 관련 방법

Country Status (7)

Country Link
US (1) US8025813B2 (enExample)
JP (1) JP2011139030A (enExample)
KR (1) KR101718788B1 (enExample)
CN (1) CN102061132B (enExample)
DE (1) DE102010051045B4 (enExample)
FR (1) FR2952376B1 (enExample)
TW (1) TWI485235B (enExample)

Families Citing this family (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5516184B2 (ja) * 2010-07-26 2014-06-11 信越化学工業株式会社 合成石英ガラス基板の製造方法
US8865013B2 (en) * 2011-08-15 2014-10-21 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Method for chemical mechanical polishing tungsten
US9011207B2 (en) 2012-10-29 2015-04-21 Wayne O. Duescher Flexible diaphragm combination floating and rigid abrading workholder
US8998678B2 (en) 2012-10-29 2015-04-07 Wayne O. Duescher Spider arm driven flexible chamber abrading workholder
US9199354B2 (en) 2012-10-29 2015-12-01 Wayne O. Duescher Flexible diaphragm post-type floating and rigid abrading workholder
US9233452B2 (en) 2012-10-29 2016-01-12 Wayne O. Duescher Vacuum-grooved membrane abrasive polishing wafer workholder
US8845394B2 (en) 2012-10-29 2014-09-30 Wayne O. Duescher Bellows driven air floatation abrading workholder
US9039488B2 (en) 2012-10-29 2015-05-26 Wayne O. Duescher Pin driven flexible chamber abrading workholder
US9604339B2 (en) 2012-10-29 2017-03-28 Wayne O. Duescher Vacuum-grooved membrane wafer polishing workholder
US8998677B2 (en) 2012-10-29 2015-04-07 Wayne O. Duescher Bellows driven floatation-type abrading workholder
US9012327B2 (en) * 2013-09-18 2015-04-21 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Low defect chemical mechanical polishing composition
CN105813808B (zh) 2013-12-09 2018-10-09 3M创新有限公司 砾岩磨料颗粒、含有砾岩磨料颗粒的磨料制品及其制备方法
WO2019003433A1 (ja) 2017-06-30 2019-01-03 大塚製薬株式会社 ベンゾアゼピン誘導体
US10926378B2 (en) 2017-07-08 2021-02-23 Wayne O. Duescher Abrasive coated disk islands using magnetic font sheet
CN109825199A (zh) * 2019-04-11 2019-05-31 富地润滑科技股份有限公司 一种绿色环保抛光液及其制备方法
US11691241B1 (en) * 2019-08-05 2023-07-04 Keltech Engineering, Inc. Abrasive lapping head with floating and rigid workpiece carrier

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005101545A (ja) * 2003-08-05 2005-04-14 Rohm & Haas Electronic Materials Cmp Holdings Inc 半導体層を研磨するための組成物
JP2005347737A (ja) * 2004-05-07 2005-12-15 Nissan Chem Ind Ltd シリコンウェハー用研磨組成物

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1107097C (zh) * 1999-07-28 2003-04-30 长兴化学工业股份有限公司 化学机械研磨组合物及方法
EP1226220B1 (en) * 1999-08-13 2007-04-18 Cabot Microelectronics Corporation Polishing system and method of its use
TWI307712B (en) 2002-08-28 2009-03-21 Kao Corp Polishing composition
US7063597B2 (en) 2002-10-25 2006-06-20 Applied Materials Polishing processes for shallow trench isolation substrates
US7241725B2 (en) * 2003-09-25 2007-07-10 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Barrier polishing fluid
KR100795364B1 (ko) * 2004-02-10 2008-01-17 삼성전자주식회사 반도체 기판용 세정액 조성물, 이를 이용한 세정 방법 및도전성 구조물의 제조 방법
US7253111B2 (en) 2004-04-21 2007-08-07 Rohm And Haas Electronic Materials Cmp Holding, Inc. Barrier polishing solution
US20060110923A1 (en) * 2004-11-24 2006-05-25 Zhendong Liu Barrier polishing solution
US7790618B2 (en) * 2004-12-22 2010-09-07 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Selective slurry for chemical mechanical polishing
CN101457124B (zh) * 2007-12-14 2013-08-28 安集微电子（上海）有限公司 一种化学机械抛光液
US8017524B2 (en) * 2008-05-23 2011-09-13 Cabot Microelectronics Corporation Stable, high rate silicon slurry

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005101545A (ja) * 2003-08-05 2005-04-14 Rohm & Haas Electronic Materials Cmp Holdings Inc 半導体層を研磨するための組成物
JP2005347737A (ja) * 2004-05-07 2005-12-15 Nissan Chem Ind Ltd シリコンウェハー用研磨組成物

Also Published As

Publication number Publication date
DE102010051045A1 (de) 2011-05-19
TWI485235B (zh) 2015-05-21
US20110111595A1 (en) 2011-05-12
US8025813B2 (en) 2011-09-27
CN102061132A (zh) 2011-05-18
CN102061132B (zh) 2014-02-26
FR2952376A1 (fr) 2011-05-13
TW201120200A (en) 2011-06-16
DE102010051045B4 (de) 2021-10-21
JP2011139030A (ja) 2011-07-14
KR20110052519A (ko) 2011-05-18
FR2952376B1 (fr) 2013-01-11

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