KR101715714B1 - Light generating device and method of manufacturing the same - Google Patents

Light generating device and method of manufacturing the same Download PDF

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Publication number
KR101715714B1
KR101715714B1 KR1020150133584A KR20150133584A KR101715714B1 KR 101715714 B1 KR101715714 B1 KR 101715714B1 KR 1020150133584 A KR1020150133584 A KR 1020150133584A KR 20150133584 A KR20150133584 A KR 20150133584A KR 101715714 B1 KR101715714 B1 KR 101715714B1
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South Korea
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layer
semiconductor layer
type semiconductor
light
light emitting
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KR1020150133584A
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Korean (ko)
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소순진
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주식회사 레이토피아
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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03G—ELECTROGRAPHY; ELECTROPHOTOGRAPHY; MAGNETOGRAPHY
    • G03G15/00—Apparatus for electrographic processes using a charge pattern
    • G03G15/04—Apparatus for electrographic processes using a charge pattern for exposing, i.e. imagewise exposure by optically projecting the original image on a photoconductive recording material
    • G03G15/04036—Details of illuminating systems, e.g. lamps, reflectors
    • G03G15/04045—Details of illuminating systems, e.g. lamps, reflectors for exposing image information provided otherwise than by directly projecting the original image onto the photoconductive recording material, e.g. digital copiers
    • G03G15/04054—Details of illuminating systems, e.g. lamps, reflectors for exposing image information provided otherwise than by directly projecting the original image onto the photoconductive recording material, e.g. digital copiers by LED arrays
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/10—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration
    • H01L27/102—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration including bipolar components
    • H01L27/1027—Thyristors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03G—ELECTROGRAPHY; ELECTROPHOTOGRAPHY; MAGNETOGRAPHY
    • G03G2215/00—Apparatus for electrophotographic processes
    • G03G2215/04—Arrangements for exposing and producing an image
    • G03G2215/0402—Exposure devices
    • G03G2215/0407—Light-emitting array or panel
    • G03G2215/0409—Light-emitting diodes, i.e. LED-array
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/13—Discrete devices, e.g. 3 terminal devices
    • H01L2924/1301—Thyristor

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  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Led Devices (AREA)

Abstract

Disclosed is a light emitting device which may be applied to a laser printer head having a high output speed and a method for manufacturing the same. The light emitting device includes a plurality of light emitting thyristors, an activation part, a first connection wire, a second connection wire and a third connection wire. The plurality of light emitting thyristors are arranged in one line, and each light emitting thyristor includes an anode electrode, a cathode electrode and a gate electrode. The activation part activates the light emitting thyristors. The first connection wire connects the gate electrodes to the activation part. The second connection wire transmits a signal for controlling whether the activated light emitting thyristors emit light. The third connection wire connects the cathode electrodes to the second connection wire. Here, the light emitting thyristor includes a semiconductor laminated structure including a first p-type semiconductor layer, a first n-type semiconductor layer, a second p-type semiconductor layer and a second n-type semiconductor layer, an attachment substrate attached to the semiconductor laminated structure and a reflective layer formed between the semiconductor laminated structure and the attachment substrate.

Description

TECHNICAL FIELD [0001] The present invention relates to a light emitting device,

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a light emitting device and a method of manufacturing the same, and more particularly, to a light emitting device that can be applied to a printer or the like and a method of manufacturing the same.

As personal computers have become widespread, printers for outputting a screen of a computer to a paper sheet have been widely used. Such printers have been developed as dot printers, bubble jet printers, laser printers, and the like.

Among them, laser printers have been widely used because of their excellent speed and resolution. However, there is a problem that the size of the laser printer is increased due to the optical device. Therefore, a technique for reducing the size to a compact size using the LED has been developed and replaced by a laser printer.

Such a printer arranges a light-emitting thyristor and controls the light-emitting thyristor so that the drum is irradiated with light, irradiated or digitized, and dye particles are adhered to the drum, and heat is applied to the paper.

However, since the light amount of the light-emitting thyristor applied to the conventional print head is insufficient, it can not be applied to a printer head for high output speed. This is because, if the light amount of the light-emitting thyristor is insufficient, the drum should be irradiated with light for a sufficient time. Therefore, development of a light emitting thyristor applicable to a printer head for a high output speed is required.

Accordingly, an object of the present invention is to provide a light emitting device and a light emitting thyristor applicable to a printer head for a high output speed.

Another problem to be solved by the present invention is to provide a method of easily manufacturing such a light emitting device and a light emitting thyristor.

In order to solve these problems, a light emitting device according to an exemplary embodiment of the present invention includes a plurality of light emitting thyristors, an active part, a first connection wiring, a second connection wiring, and a third connection wiring. The plurality of the light-emitting thyristors are arranged in a line, and each includes an anode electrode, a cathode electrode, and a gate electrode. The activation part activates the light-emitting thyristor. The first connection wiring connects the gate electrodes to the activation part. The second connection wiring transmits a signal for controlling whether or not the activated light-emitting thyristor emits light. The third connection wiring connects the cathode electrodes to the second connection wiring. The light emitting thyristor may include a semiconductor laminated structure including a first p-type semiconductor layer, a first n-type semiconductor layer, a second p-type semiconductor layer, and a second n-type semiconductor layer alternately stacked, And a reflection layer formed between the semiconductor laminated structure and the attachment substrate.

Further, the light-emitting thyristor according to an exemplary embodiment of the present invention includes a first p-type semiconductor layer, a first n-type semiconductor layer, a second p-type semiconductor layer, and a second n-type semiconductor layer alternately stacked A semiconductor laminated structure, an attached substrate attached to the semiconductor laminated structure, and a reflective layer formed between the semiconductor laminated structure and the attached substrate.

At this time, a transparent blocking layer is preferably formed between the semiconductor laminated structure and the reflective layer.

In addition, the transparent barrier layer includes a plurality of via holes, and the conductive contact structure is formed in the via hole.

For example, the transparent barrier layer may comprise silicon oxide (SiO 2) or silicon nitride (SiN).

In addition, the contact structure may be formed of gold (Au) alloy containing germanium (Ge).

In addition, the diameter of each of the via holes may be formed to be in the range of 1 占 퐉 to 50 占 퐉.

For example, the transparent barrier layer and the reflective layer may be bonded together by an eutectic metal.

A method of manufacturing a light emitting device according to an exemplary embodiment of the present invention includes a first p-type semiconductor layer alternately laminated on a substrate, a first n-type semiconductor layer, a second p-type semiconductor layer, and a second n-type semiconductor layer Forming a plurality of via holes in the transparent barrier layer, forming a plurality of via holes in the via hole, forming a plurality of via holes in the via hole, Forming a reflective layer on one side of the attached substrate; attaching the reflective layer and the transparent blocking layer using an adhesive layer; and peeling off the substrate.

The light emitting device manufacturing method includes: etching the other surface of the semiconductor multilayer structure to remove the uppermost semiconductor layer in a part of the region to expose the semiconductor layer of the upper layer; forming an uppermost layer and an electrode Forming an insulating layer on the other surface of the semiconductor laminated structure on which the electrode is formed; exposing the electrode by removing a part of the insulating layer; and forming a connection wiring on the electrode can do.

According to the light emitting device of the present invention, by forming the reflective layer, the amount of light emitted to the upper portion can be increased by allowing the reflective layer to reflect the light traveling downward to the upper portion again, Time can be reduced, so that it can be applied to a high output speed print head.

When the transparent barrier layer is formed between the semiconductor multilayer structure and the reflective layer, the phenomenon that the metal material forming the reflective layer diffuses and spreads to the semiconductor material of the semiconductor multilayer structure is reduced to prevent the deterioration of the light emitting thyristor .

1 is a circuit diagram of a light emitting device according to an exemplary embodiment of the present invention.
2 is a waveform diagram showing the first clock signal and the second clock signal shown in FIG.
3 is a cross-sectional view of a light emitting thyristor according to an exemplary embodiment of the present invention.
4A to 4I are cross-sectional views illustrating a manufacturing process of the light-emitting thyristor shown in FIG.

The present invention is capable of various modifications and various forms, and specific embodiments are illustrated in the drawings and described in detail in the text. It should be understood, however, that the invention is not intended to be limited to the particular forms disclosed, but includes all modifications, equivalents, and alternatives falling within the spirit and scope of the invention. Like reference numerals are used for like elements in describing each drawing. In the accompanying drawings, the dimensions of the structures may be exaggerated to illustrate the present invention.

The terms first, second, etc. may be used to describe various components, but the components should not be limited by the terms. The terms are used only for the purpose of distinguishing one component from another. For example, without departing from the scope of the present invention, the first component may be referred to as a second component, and similarly, the second component may also be referred to as a first component.

The terminology used herein is for the purpose of describing particular embodiments only and is not intended to be limiting of the invention. The singular expressions include plural expressions unless the context clearly dictates otherwise. In the present application, the terms "comprising" or "having ", and the like, are intended to specify the presence of stated features, integers, steps, operations, elements, parts, or combinations thereof, But do not preclude the presence or addition of one or more other features, integers, steps, operations, elements, parts, or combinations thereof. In addition, A and B are 'connected' and 'coupled', meaning that A and B are directly connected or combined, and other component C is included between A and B, and A and B are connected or combined .

Unless defined otherwise, all terms used herein, including technical or scientific terms, have the same meaning as commonly understood by one of ordinary skill in the art to which this invention belongs. Terms such as those defined in commonly used dictionaries are to be interpreted as having a meaning consistent with the contextual meaning of the related art and are to be interpreted as either ideal or overly formal in the sense of the present application Do not. Also, in the claims of a method invention, each step may be reversed in order, unless the steps are clearly constrained in order.

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS Reference will now be made in detail to the preferred embodiments of the present invention, examples of which are illustrated in the accompanying drawings.

1 is a circuit diagram of a light emitting device according to an exemplary embodiment of the present invention.

Referring to FIG. 1, a light emitting device 100 according to an exemplary embodiment of the present invention includes a plurality of light emitting thyristors L1, L2, L3, L4, ..., an active part 110, A first connection wiring 120, a second connection wiring 130, and a third connection wiring 140.

A plurality of the light-emitting thyristors (L1, L2, L3, L4, ...) are arranged in a line. Although only four light-emitting thyristors L1, L2, L3 and L4 are shown in the figure, the number of light-emitting thyristors can be changed in design. Each of the plurality of light-emitting thyristors L1, L2, L3, L4, ... includes an anode electrode, a cathode electrode, and a gate electrode.

The activation part 110 activates the light-emitting thyristors L1, L2, L3, L4, ....

The activation part 110 includes a plurality of shift thyristors S1, S2, S3, S4, ... arranged in a row, a plurality of diodes D1, D2, D3, D4, D5, ... arranged in a line. , A first signal line 111, a second signal line 112, and a third signal line 113.

The anode electrodes of the plurality of shift thyristors S1, S2, S3, S4, ... are connected to the third signal line 113. [ The cathode electrodes of the odd-numbered shift thyristors S1, S3, ..., among the plurality of shift thyristors S1, S2, S3, S4, ... are connected to the first signal line 111 And the cathode electrodes of the even-numbered shift thyristors S2, S4, ... are connected to the second signal line 112. [ The gate electrode of the first shift thyristor S1 is connected to the first node N1 and the gate electrode of the second shift thyristor S2 is connected to the second node N2, The gate electrode is connected to the third node N3, and the gate electrode of the fourth shift thyristor S4 is connected to the fourth node N4.

The first node N1 is coupled to the third signal line 113 through a first resistor R1 and the second node N2 is coupled to the third signal line 113 through a second resistor R2. The third node N3 is connected to the third signal line 113 through a third resistor R3 and the fourth node N4 is connected to the fourth node N4 through a fourth resistor R4, And is connected to the third signal line 113.

The first diode D1 has an anode connected to the second signal line 112, and a cathode connected to the first node N1. The second diode D2 has an anode connected to the first node N1, and a cathode connected to the second node N2. The third diode D3 has an anode connected to the second node N2, and a cathode connected to the third node N3. The anode of the fourth diode D4 is connected to the third node N3, and the cathode thereof is connected to the fourth node N4.

The first connection wiring 120 connects the gate electrodes of the light-emitting thyristors L1, L2, L3, L4, ... to the activation part 110. [ More specifically, the first connection wiring 120 connects the gate electrodes of the light-emitting thyristors L1, L2, L3, L4, ... to the nodes N1, N2, N3, N4, Connect.

The second connection wiring 130 transmits a signal for controlling whether or not the activated light-emitting thyristors L1, L2, L3, L4, ... emit light. The third connection wiring 140 connects the cathode electrodes of the light-emitting thyristors L1, L2, L3, L4, ... to the second connection wiring 130. At this time, a resistance lowering layer is formed below the cathode electrodes of the light-emitting thyristors L1, L2, L3, L4, .... Accordingly, the contact resistance with the cathode electrode is reduced to improve the efficiency. Furthermore, the resistance lowering layer is formed only on the lower portion of the cathode electrode, and the remaining regions are removed to prevent light generated in the light emitting layer from being absorbed in the resistance lowering layer, thereby improving light extraction efficiency. These features of the present invention will be described in detail later.

Hereinafter, the operation of the light emitting device according to the present invention will be described in more detail with reference to FIGS. 1 and 2. FIG.

2 is a waveform diagram showing the first clock signal and the second clock signal shown in FIG.

2, a first clock signal CL1 of a low voltage (for example, -5 V) is applied to the first signal line 111 and a second clock signal CL1 of a high voltage (for example, 0 V) And the signal CL2 is applied to the second signal line 112. [ On the other hand, a low voltage (for example, -5 V) is applied to the third signal line 113 as a bias voltage.

Then, the first shift thyristor S1 is turned on, and the voltage of the first node N1, that is, the gate voltage of the first shift thyristor S1 becomes a high voltage (for example, 0 V) L1 are activated. However, the voltage of the second node N2 is lowered by the second diode D2 to, for example, -1.5V. Accordingly, a low voltage is applied to the gate electrode of the second light-emitting thyristor L2 to be activated can not do it. In addition, the voltage of the third node N3 is generated by the third diode D3 to become -3 V, for example, and accordingly, the gate voltage of the third light-emitting thyristor L3 is also inactivated by applying the low voltage . That is, only the first light-emitting thyristor L1 is activated, and the light-emission thyristors L2, L3,...

At this time, if a high voltage (for example, 0 V) is applied to the second connection wiring 130, the first light emitting thyristor L1 does not emit light, and when a low voltage (for example, -5 V) is applied to the second connection wiring 130 , The first light emitting thyristor (L1) emits light.

A first clock signal CL2 of a high voltage (for example, 0 V) is applied to the first signal line 111 and a second clock signal CL2 of a low voltage (for example, -5 V) is applied to the second signal line 112, .

Then, the first shift thyristor S2 is turned off, the second shift thyristor S2 is turned on, and the voltage of the second node N2, that is, the gate voltage of the second shift thyristor S2, For example, 0 V), and the second light emitting thyristor L2 is activated. At this time, the light emission of the second light emitting thyristor (L2) is controlled by the voltage applied to the second connection wiring (130).

In this way, the activation part 110 sequentially activates the light-emitting thyristors L1, L2, L3, ... so that the potential of the cathode electrode of the activated light-emitting thyristors L1, L2, L3, It is possible to control the light emission of the light-emitting thyristors L1, L2, L3, ....

On the other hand, the activation part 110 is an exemplary embodiment, and various modifications are possible.

3 is a cross-sectional view of a light emitting thyristor according to an exemplary embodiment of the present invention. The light-emitting thyristor L according to an exemplary embodiment of the present invention shown in FIG. 3 can be applied to the light-emitting thyristors L1, L2, L3, ... shown in FIG.

Referring to FIG. 3, the light emitting thyristor L according to an exemplary embodiment of the present invention includes a first p-type semiconductor layer 12, a first n-type semiconductor layer 13, The adhesion substrate 43 is bonded to the lower surface of the semiconductor laminated structure in which the layer 14 and the second n-type semiconductor layer 15 are laminated. A reflective layer 42 is formed on the upper surface of the attachment substrate 41.

The second n-type semiconductor layer 15 is etched to expose the second p-type semiconductor layer 14 in some regions.

For example, the semiconductor layers 12, 13, 14, and 15 may be made of an aluminum gallium arsenide (AlGaAs) semiconductor. The first p-type semiconductor layer 12 and the second p-type semiconductor layer 14 are formed by doping an aluminum gallium arsenide (AlGaAs) semiconductor with zinc (Zn) The first n-type semiconductor layer 13 and the second n-type semiconductor layer 15 may be formed by doping an aluminum gallium arsenide (AlGaAs) semiconductor with a silicon (Si) impurity.

A cathode electrode 17 is formed on the second n-type semiconductor layer 15 and a gate electrode 18 is formed on the exposed second p-type semiconductor layer 14. The cathode electrode 17 is made of an alloy containing, for example, at least 95% of gold and at least one of germanium (Ge). The gate electrode 18 may include at least 95% . The gate electrode 18 made of gold (Au) containing a part of zinc (Zn) and the cathode 17 of an alloy made of gold (Au) partially including germanium (Ge) The second n-type semiconductor layer 15 containing impurities and the zinc impurity Zn are contacted with the second p-type semiconductor layer 14 to improve ohmic contact characteristics between the metal layer and the semiconductor layer .

And an insulating layer 19 is formed on the insulating layer 19. The insulating layer 19 includes a contact hole formed on the cathode electrode 17 and on the gate electrode 18, The electrode 18 is exposed. The insulating layer 19 may include, for example, silicon oxide or silicon nitride.

 The exposed cathode electrode 17 is in contact with the third connection wiring 140 shown in FIG. 1, and the exposed gate electrode 18 is in contact with the first connection wiring 120. The first connection wiring 140 and the third connection wiring 140 may include aluminum (Al), for example.

The first n-type semiconductor layer 12, the first n-type semiconductor layer 13, the second p-type semiconductor layer 14, and the second n-type semiconductor layer 15 are attached to the lower surface of the semiconductor laminated structure The attached substrate 41 may be a metal substrate in addition to a silicon (Si) substrate, a gallium arsenide (GaAs) substrate, a germanium (Ge) substrate, a glass substrate.

The reflective layer 42 is formed on the upper surface of the attached substrate 41 as shown in the case of the non-metallic substrate 41. However, if the attached substrate 41 is a metal substrate and the reflectance is good, It may not be formed.

For example, the reflective layer 42 may include a metal having a high reflectance such as aluminum (Al), gold (Au), silver (Ag), titanium (Ti), nickel (Ni), chromium (Cr) can do.

This reflective layer 42 can increase the amount of light emitted to the upper side by reflecting the light proceeding to the lower portion back to the upper portion, thereby reducing the light irradiation time for the drum, .

On the other hand, the semiconductor laminated structure in which the first p-type semiconductor layer 12, the first n-type semiconductor layer 13, the second p-type semiconductor layer 14 and the second n-type semiconductor layer 15 are laminated is a reflective layer 42) and the adhesive layer (43). For example, the adhesive layer 43 may include an eutectic metal such as AgSn.

At this time, a transparent barrier layer 44 is formed on the lower surface of the semiconductor laminated structure. When the metal material contacts the semiconductor material, the transparent barrier layer 44 prevents diffusion of the metal material into the semiconductor layer. It is also made of a transparent material so that light can pass through it. For example, the transparent barrier layer 44 may be composed of silicon oxide (SiO 2 ) or silicon nitride (SiN).

Meanwhile, the transparent barrier layer 44 includes a plurality of via holes, and the contact structure 45 is formed in the via hole, so that the lower anode and the upper cathode are electrically connected through the contact structure 45. The contact structure 45 may be formed of gold (Au) alloy containing germanium (Ge).

On the other hand, for example, a thyristor having a pnpn structure has been described above, but it is obvious to a person skilled in the art that a similar electrode structure can be applied to a thyristor having an npnp structure.

4A to 4I are cross-sectional views illustrating a manufacturing process of the light-emitting thyristor shown in FIG.

4A, in the case of the above-described pnpn structured thyristor, the second n-type semiconductor layer 15, the second p-type semiconductor layer 14, the first n-type semiconductor layer 13 And the first p-type semiconductor layer 12 are laminated. Alternatively, in the case of an npnp structure thyristor, a p-type semiconductor layer is formed first, and then a semiconductor layer including an opposite dopant is formed. The semiconductor layers 12, 13, 14, and 15 may be made of an aluminum gallium arsenide (AlGaAs) semiconductor. The first p-type semiconductor layer 12 and the second p-type semiconductor layer 14 are formed by doping an aluminum gallium arsenide (AlGaAs) semiconductor with zinc (Zn) The first n-type semiconductor layer 13 and the second n-type semiconductor layer 15 may be formed by doping an aluminum gallium arsenide (AlGaAs) semiconductor with a silicon (Si) impurity.

Next, referring to FIG. 4B, a transparent blocking layer is formed on the upper surface of the first p-type semiconductor layer 12, and a plurality of via holes are formed to form a transparent blocking layer 44. At this time, the diameter of the plurality of bar holes is preferably in the range of 1 탆 to 50 탆. If the diameter of the via hole is too small, the current conduction becomes poor, and if the diameter is too large, the blocking effect of the metal and the semiconductor is reduced.

Next, referring to FIG. 4C, a contact structure 45 is formed in the via hole of the transparent blocking layer 44 to provide electrical communication with the bottom.

4D and 4E, the adhesive layer 43 is applied to the transparent barrier layer 44 and the attached substrate 41 on which the reflective layer 42 is formed is attached. For example, although the adhesive layer 43 is shown as being applied to the transparent barrier layer 44, the adhesive layer 43 may be formed on the reflective layer 42.

Thereafter, although not shown, after the attachment substrate 41 is attached, the substrate 51 is removed.

Next, referring to FIG. 4F, the substrate 51 is removed and a portion of the second n-type semiconductor layer 15 is exposed to expose a portion of the second p-type semiconductor layer 14.

4G, a cathode electrode 17 is formed on the second n-type semiconductor layer 15, a gate electrode 18 is formed on the exposed second p-type semiconductor layer 14, .

4H, an insulating layer 19 is formed thereon, and the cathode electrode 17 and the gate electrode 18 are removed to expose the cathode electrode 17 and the gate electrode 18 .

Referring to FIG. 4I, a third connection wiring 140 for electrically connecting the exposed cathode electrode 17 and a first connection wiring 120 for electrically connecting the gate electrode 180 are formed.

While the present invention has been described in connection with what is presently considered to be practical and exemplary embodiments, it is to be understood that the invention is not limited to the disclosed embodiments, but, on the contrary, It will be understood by those skilled in the art that various changes in form and details may be made therein without departing from the spirit and scope of the invention as defined by the appended claims.

100: light emitting device 110: activated part
111: first signal line 112: second signal line
113: third signal line 120: first connection wiring
130: second connection wiring 140: third connection wiring
11: substrate 12: first p-type semiconductor layer
13: first n-type semiconductor layer 14: second p-type semiconductor layer
15: second n-type semiconductor layer 16: resistance lowering layer
17: cathode electrode 18: gate electrode
19: Insulation layer
41: attached substrate 42: reflective layer
43: adhesive layer 44: transparent barrier layer
45: contact structure
CL1: first clock signal CL2: second clock signal

Claims (16)

A plurality of emissive thyristors arranged in series and each comprising an anode electrode, a cathode electrode and a gate electrode;
An activation part for activating the light-emitting thyristor;
A first connection wiring connecting the gate electrodes to the activation part;
A second connection wiring for transmitting a signal for controlling whether the light emitting thyristor is activated or not; And
And a third connection wiring for connecting the cathode electrodes to the second connection wiring,
The light-
Type semiconductor layer, a first n-type semiconductor layer, a second p-type semiconductor layer, and a second n-type semiconductor layer stacked alternately, a transparent barrier layer adhered to the semiconductor multilayer structure, An adhesive substrate having a reflective surface whose upper surface is made of a metal, and an adhesive layer for adhering the transparent blocking layer and the adhesive substrate,
Wherein the transparent barrier layer includes a plurality of via holes, and a conductive contact structure is formed in the via hole.
delete delete The method according to claim 1,
It said transparent barrier layer is a light emitting device comprising a silicon oxide (SiO 2) or silicon nitride (SiN).
The method according to claim 1,
Wherein the contact structure is formed of a gold (Au) alloy containing germanium (Ge).
The method according to claim 1,
And the diameter of each of the via holes is in the range of 1 占 퐉 to 50 占 퐉.
The method according to claim 1,
Wherein the adhesive layer comprises an eutectic metal.
A semiconductor laminated structure including a first p-type semiconductor layer alternately laminated, a first n-type semiconductor layer, a second p-type semiconductor layer, and a second n-type semiconductor layer;
A transparent barrier layer attached to the semiconductor laminated structure;
A mounting substrate having a reflecting surface whose upper surface is composed of a metal; And
And an adhesive layer for bonding the transparent barrier layer and the attachment substrate,
Wherein the transparent barrier layer includes a plurality of via holes, and the conductive contact structure is formed in the via hole.
delete delete 9. The method of claim 8,
It said transparent barrier layer is a light-emitting thyristor, comprising: a silicon oxide (SiO 2) or silicon nitride (SiN).
9. The method of claim 8,
Wherein the contact structure is formed of a gold (Au) alloy containing germanium (Ge).
9. The method of claim 8,
And each of the via holes has a diameter ranging from 1 占 퐉 to 50 占 퐉.
9. The method of claim 8,
Wherein the adhesive layer comprises an eutectic metal.
Forming a semiconductor laminated structure including a first p-type semiconductor layer, a first n-type semiconductor layer, a second p-type semiconductor layer, and a second n-type semiconductor layer alternately stacked on a substrate;
Forming a transparent blocking layer on one surface of the semiconductor laminated structure;
Forming a plurality of via holes in the transparent blocking layer;
Forming a contact structure in the via hole;
Preparing an adhesive substrate having a reflective layer composed of a metal on one surface thereof;
Attaching the attachment substrate and the transparent barrier layer using an adhesive layer so that the reflective layer faces the transparent barrier layer; And
Removing the substrate;
Emitting device.
16. The method of claim 15,
Etching the other surface of the semiconductor laminated structure to expose the uppermost semiconductor layer in a region to expose the uppermost semiconductor layer;
Forming an electrode on the uppermost semiconductor layer and the uppermost semiconductor layer;
Forming an insulating layer on the other surface of the semiconductor laminated structure on which the electrodes are formed;
Removing a portion of the insulating layer to expose the electrode; And
Forming a connection wiring on the electrode;
Emitting device.
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Citations (4)

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Publication number Priority date Publication date Assignee Title
JP2003249681A (en) * 2002-02-25 2003-09-05 Nippon Sheet Glass Co Ltd Light emitting thyristor and self-scanning light emitting element array
JP2007250961A (en) * 2006-03-17 2007-09-27 Fuji Xerox Co Ltd Light-emitting element array
KR100786802B1 (en) * 2006-09-26 2007-12-18 한국광기술원 Vertical type semiconductor light emitting diode and the method for manufacturing the same
KR20130014677A (en) * 2012-12-27 2013-02-08 서울옵토디바이스주식회사 Vertical light emitting diode having light-transmitting material pattern and method of fabricating the same

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003249681A (en) * 2002-02-25 2003-09-05 Nippon Sheet Glass Co Ltd Light emitting thyristor and self-scanning light emitting element array
JP2007250961A (en) * 2006-03-17 2007-09-27 Fuji Xerox Co Ltd Light-emitting element array
KR100786802B1 (en) * 2006-09-26 2007-12-18 한국광기술원 Vertical type semiconductor light emitting diode and the method for manufacturing the same
KR20130014677A (en) * 2012-12-27 2013-02-08 서울옵토디바이스주식회사 Vertical light emitting diode having light-transmitting material pattern and method of fabricating the same

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