KR101705583B1 - 패턴이 형성된 플렉서블 투명전극의 제조방법 - Google Patents

패턴이 형성된 플렉서블 투명전극의 제조방법 Download PDF

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Publication number
KR101705583B1
KR101705583B1 KR1020160161345A KR20160161345A KR101705583B1 KR 101705583 B1 KR101705583 B1 KR 101705583B1 KR 1020160161345 A KR1020160161345 A KR 1020160161345A KR 20160161345 A KR20160161345 A KR 20160161345A KR 101705583 B1 KR101705583 B1 KR 101705583B1
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KR
South Korea
Prior art keywords
resin
substrate
metal
transparent electrode
polymer
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KR1020160161345A
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English (en)
Korean (ko)
Inventor
김종복
고동욱
구봉준
진대순
허다혜
Original Assignee
금오공과대학교 산학협력단
주식회사 테크놀로지아
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Priority to KR1020160161345A priority Critical patent/KR101705583B1/ko
Application granted granted Critical
Publication of KR101705583B1 publication Critical patent/KR101705583B1/ko
Priority to PCT/KR2017/001680 priority patent/WO2018101540A1/fr

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0224—Electrodes
    • H01L31/022466—Electrodes made of transparent conductive layers, e.g. TCO, ITO layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0216—Coatings
    • H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
    • H01L31/02167—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0236—Special surface textures
    • H01L31/02366—Special surface textures of the substrate or of a layer on the substrate, e.g. textured ITO/glass substrate or superstrate, textured polymer layer on glass substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/036—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes
    • H01L31/0392—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including thin films deposited on metallic or insulating substrates ; characterised by specific substrate materials or substrate features or by the presence of intermediate layers, e.g. barrier layers, on the substrate
    • H01L31/03926—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including thin films deposited on metallic or insulating substrates ; characterised by specific substrate materials or substrate features or by the presence of intermediate layers, e.g. barrier layers, on the substrate comprising a flexible substrate
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Sustainable Development (AREA)
  • Sustainable Energy (AREA)
  • Laminated Bodies (AREA)
KR1020160161345A 2016-11-30 2016-11-30 패턴이 형성된 플렉서블 투명전극의 제조방법 KR101705583B1 (ko)

Priority Applications (2)

Application Number Priority Date Filing Date Title
KR1020160161345A KR101705583B1 (ko) 2016-11-30 2016-11-30 패턴이 형성된 플렉서블 투명전극의 제조방법
PCT/KR2017/001680 WO2018101540A1 (fr) 2016-11-30 2017-02-16 Procédé de fabrication d'une électrode transparente souple ayant un motif

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1020160161345A KR101705583B1 (ko) 2016-11-30 2016-11-30 패턴이 형성된 플렉서블 투명전극의 제조방법

Publications (1)

Publication Number Publication Date
KR101705583B1 true KR101705583B1 (ko) 2017-02-13

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Family Applications (1)

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KR1020160161345A KR101705583B1 (ko) 2016-11-30 2016-11-30 패턴이 형성된 플렉서블 투명전극의 제조방법

Country Status (2)

Country Link
KR (1) KR101705583B1 (fr)
WO (1) WO2018101540A1 (fr)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20190020527A (ko) 2017-08-21 2019-03-04 금오공과대학교 산학협력단 패턴이 형성된 플렉서블 투명전극의 제조방법
JP2022539623A (ja) * 2019-05-13 2022-09-13 京東方科技集團股▲ふん▼有限公司 発光デバイス及びその製造方法

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN114678173A (zh) * 2022-04-06 2022-06-28 重庆工程职业技术学院 银纳米线在粗糙衬底上的图案化方法、以及具有银纳米线图案的柔性导电材料和应用
CN115064618B (zh) * 2022-08-17 2022-11-29 苏州晶台光电有限公司 一种cob模组封装方法

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101112058B1 (ko) * 2010-12-31 2012-02-24 한국생산기술연구원 원자층 형성 공정의 선택적 증착으로 투명전극이 제조된 채널 구조의 태양전지 제조방법
KR101161301B1 (ko) 2012-05-21 2012-07-04 한국기계연구원 플라즈마를 이용한 금속 배선이 함몰된 유연 기판의 제조방법 및 이에 따라 제조되는 유연 기판
KR101191865B1 (ko) 2011-04-20 2012-10-16 한국기계연구원 금속 배선이 함몰된 유연 기판의 제조방법 및 이에 따라 제조되는 유연 기판
KR101263194B1 (ko) * 2012-05-23 2013-05-10 주식회사 한국엔티켐 금속 나노구조체와 전도성 고분자로 이루어진 복수개의 혼합 도전층을 포함하는 투명 전도성 박막 및 이의 제조방법.
KR20160130017A (ko) * 2015-04-30 2016-11-10 성균관대학교산학협력단 투명전극의 제조방법 및 이로부터 제조된 투명전극
KR101685069B1 (ko) * 2016-04-01 2016-12-09 금오공과대학교 산학협력단 패턴이 형성된 플렉서블 투명전극의 제조방법

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4775204B2 (ja) * 2006-09-20 2011-09-21 凸版印刷株式会社 導電性パターンの形成方法、配線板の製造方法及び配線板

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101112058B1 (ko) * 2010-12-31 2012-02-24 한국생산기술연구원 원자층 형성 공정의 선택적 증착으로 투명전극이 제조된 채널 구조의 태양전지 제조방법
KR101191865B1 (ko) 2011-04-20 2012-10-16 한국기계연구원 금속 배선이 함몰된 유연 기판의 제조방법 및 이에 따라 제조되는 유연 기판
KR101161301B1 (ko) 2012-05-21 2012-07-04 한국기계연구원 플라즈마를 이용한 금속 배선이 함몰된 유연 기판의 제조방법 및 이에 따라 제조되는 유연 기판
KR101263194B1 (ko) * 2012-05-23 2013-05-10 주식회사 한국엔티켐 금속 나노구조체와 전도성 고분자로 이루어진 복수개의 혼합 도전층을 포함하는 투명 전도성 박막 및 이의 제조방법.
KR20160130017A (ko) * 2015-04-30 2016-11-10 성균관대학교산학협력단 투명전극의 제조방법 및 이로부터 제조된 투명전극
KR101685069B1 (ko) * 2016-04-01 2016-12-09 금오공과대학교 산학협력단 패턴이 형성된 플렉서블 투명전극의 제조방법

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20190020527A (ko) 2017-08-21 2019-03-04 금오공과대학교 산학협력단 패턴이 형성된 플렉서블 투명전극의 제조방법
JP2022539623A (ja) * 2019-05-13 2022-09-13 京東方科技集團股▲ふん▼有限公司 発光デバイス及びその製造方法

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