KR101687038B1 - 에러 검출 방법 및 하나 이상의 메모리 장치를 포함하는 시스템 - Google Patents

에러 검출 방법 및 하나 이상의 메모리 장치를 포함하는 시스템 Download PDF

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Publication number
KR101687038B1
KR101687038B1 KR1020117009393A KR20117009393A KR101687038B1 KR 101687038 B1 KR101687038 B1 KR 101687038B1 KR 1020117009393 A KR1020117009393 A KR 1020117009393A KR 20117009393 A KR20117009393 A KR 20117009393A KR 101687038 B1 KR101687038 B1 KR 101687038B1
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South Korea
Prior art keywords
error
packet
command
memory devices
semiconductor memory
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KR1020117009393A
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English (en)
Korean (ko)
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KR20110103388A (ko
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피터 길링햄
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노바칩스 캐나다 인크.
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Priority claimed from US12/418,892 external-priority patent/US8880970B2/en
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    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F11/00—Error detection; Error correction; Monitoring
    • G06F11/07—Responding to the occurrence of a fault, e.g. fault tolerance
    • G06F11/08—Error detection or correction by redundancy in data representation, e.g. by using checking codes
    • G06F11/10—Adding special bits or symbols to the coded information, e.g. parity check, casting out 9's or 11's
    • G06F11/1008—Adding special bits or symbols to the coded information, e.g. parity check, casting out 9's or 11's in individual solid state devices
    • G06F11/1012—Adding special bits or symbols to the coded information, e.g. parity check, casting out 9's or 11's in individual solid state devices using codes or arrangements adapted for a specific type of error
    • G06F11/1016—Error in accessing a memory location, i.e. addressing error
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G11C29/04—Detection or location of defective memory elements, e.g. cell constructio details, timing of test signals
    • G11C29/08—Functional testing, e.g. testing during refresh, power-on self testing [POST] or distributed testing
    • G11C29/12—Built-in arrangements for testing, e.g. built-in self testing [BIST] or interconnection details
    • G11C29/38—Response verification devices
    • G11C29/42—Response verification devices using error correcting codes [ECC] or parity check
    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F11/00—Error detection; Error correction; Monitoring
    • G06F11/07—Responding to the occurrence of a fault, e.g. fault tolerance
    • G06F11/08—Error detection or correction by redundancy in data representation, e.g. by using checking codes
    • G06F11/10—Adding special bits or symbols to the coded information, e.g. parity check, casting out 9's or 11's
    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F11/00—Error detection; Error correction; Monitoring
    • G06F11/07—Responding to the occurrence of a fault, e.g. fault tolerance
    • G06F11/08—Error detection or correction by redundancy in data representation, e.g. by using checking codes
    • G06F11/10—Adding special bits or symbols to the coded information, e.g. parity check, casting out 9's or 11's
    • G06F11/1008—Adding special bits or symbols to the coded information, e.g. parity check, casting out 9's or 11's in individual solid state devices
    • G06F11/1048—Adding special bits or symbols to the coded information, e.g. parity check, casting out 9's or 11's in individual solid state devices using arrangements adapted for a specific error detection or correction feature
    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F11/00—Error detection; Error correction; Monitoring
    • G06F11/07—Responding to the occurrence of a fault, e.g. fault tolerance
    • G06F11/08—Error detection or correction by redundancy in data representation, e.g. by using checking codes
    • G06F11/10—Adding special bits or symbols to the coded information, e.g. parity check, casting out 9's or 11's
    • G06F11/1008—Adding special bits or symbols to the coded information, e.g. parity check, casting out 9's or 11's in individual solid state devices
    • G06F11/1068—Adding special bits or symbols to the coded information, e.g. parity check, casting out 9's or 11's in individual solid state devices in sector programmable memories, e.g. flash disk
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G11C29/04—Detection or location of defective memory elements, e.g. cell constructio details, timing of test signals
    • G11C2029/0411—Online error correction

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  • Engineering & Computer Science (AREA)
  • Theoretical Computer Science (AREA)
  • Quality & Reliability (AREA)
  • Physics & Mathematics (AREA)
  • General Engineering & Computer Science (AREA)
  • General Physics & Mathematics (AREA)
  • Techniques For Improving Reliability Of Storages (AREA)
  • Detection And Correction Of Errors (AREA)
  • Memory System (AREA)
KR1020117009393A 2008-12-18 2009-12-10 에러 검출 방법 및 하나 이상의 메모리 장치를 포함하는 시스템 Expired - Fee Related KR101687038B1 (ko)

Applications Claiming Priority (7)

Application Number Priority Date Filing Date Title
US13857508P 2008-12-18 2008-12-18
US61/138,575 2008-12-18
US14014708P 2008-12-23 2008-12-23
US61/140,147 2008-12-23
US12/418,892 US8880970B2 (en) 2008-12-23 2009-04-06 Error detection method and a system including one or more memory devices
US12/418,892 2009-04-06
PCT/CA2009/001777 WO2010069045A1 (en) 2008-12-18 2009-12-10 Error detection method and a system including one or more memory devices

Publications (2)

Publication Number Publication Date
KR20110103388A KR20110103388A (ko) 2011-09-20
KR101687038B1 true KR101687038B1 (ko) 2016-12-15

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KR1020117009393A Expired - Fee Related KR101687038B1 (ko) 2008-12-18 2009-12-10 에러 검출 방법 및 하나 이상의 메모리 장치를 포함하는 시스템

Country Status (6)

Country Link
EP (1) EP2359372B1 (enExample)
JP (2) JP5753988B2 (enExample)
KR (1) KR101687038B1 (enExample)
CN (1) CN102257573B (enExample)
TW (1) TWI517174B (enExample)
WO (1) WO2010069045A1 (enExample)

Cited By (2)

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US10790011B2 (en) 2018-02-26 2020-09-29 SK Hynix Inc. Address and command generation circuit, and semiconductor system
US11544004B2 (en) 2020-01-20 2023-01-03 SK Hynix Inc. Nonvolatile memory device and memory system including the same

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* Cited by examiner, † Cited by third party
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US20150248316A1 (en) * 2012-09-28 2015-09-03 Hewlett-Packard Development Company, L.P. System and method for dynamically selecting between memory error detection and error correction
KR20170086345A (ko) * 2016-01-18 2017-07-26 에스케이하이닉스 주식회사 메모리 칩 및 메모리 컨트롤러를 포함하는 메모리 시스템
CN107239363B (zh) * 2017-05-27 2020-04-24 北京东土军悦科技有限公司 一种ecc信息上报方法及系统
CN107134294B (zh) * 2017-05-27 2020-04-24 北京东土军悦科技有限公司 一种ecc信息获取方法及系统
US10963336B2 (en) 2019-08-29 2021-03-30 Micron Technology, Inc. Semiconductor device with user defined operations and associated methods and systems
US11200118B2 (en) 2019-08-29 2021-12-14 Micron Technology, Inc. Semiconductor device with modified command and associated methods and systems
US11042436B2 (en) 2019-08-29 2021-06-22 Micron Technology, Inc. Semiconductor device with modified access and associated methods and systems
JP7575955B2 (ja) * 2021-01-13 2024-10-30 キヤノン株式会社 制御装置、システム、リソグラフィ装置、物品の製造方法、制御方法及びプログラム
KR102867713B1 (ko) 2021-04-07 2025-10-13 삼성전자주식회사 반도체 메모리 장치 및 이를 포함하는 메모리 시스템
US11822793B2 (en) * 2022-04-04 2023-11-21 Western Digital Technologies, Inc. Complete and fast protection against CID conflict
CN119339751A (zh) * 2023-07-19 2025-01-21 美光科技公司 基于错误率的电压缩放

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US20040148482A1 (en) * 2003-01-13 2004-07-29 Grundy Kevin P. Memory chain
US20070162824A1 (en) * 2004-01-30 2007-07-12 Micron Technology, Inc. Error detection and correction scheme for a memory device

Cited By (3)

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Publication number Priority date Publication date Assignee Title
US10790011B2 (en) 2018-02-26 2020-09-29 SK Hynix Inc. Address and command generation circuit, and semiconductor system
US11373699B2 (en) 2018-02-26 2022-06-28 SK Hynix Inc. Address and command generation circuit, and semiconductor system
US11544004B2 (en) 2020-01-20 2023-01-03 SK Hynix Inc. Nonvolatile memory device and memory system including the same

Also Published As

Publication number Publication date
EP2359372B1 (en) 2020-04-08
EP2359372A1 (en) 2011-08-24
KR20110103388A (ko) 2011-09-20
JP2015099598A (ja) 2015-05-28
CN102257573B (zh) 2014-11-05
TWI517174B (zh) 2016-01-11
TW201106369A (en) 2011-02-16
JP5753988B2 (ja) 2015-07-22
WO2010069045A1 (en) 2010-06-24
CN102257573A (zh) 2011-11-23
JP2012512467A (ja) 2012-05-31
EP2359372A4 (en) 2017-06-21

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