KR101678524B1 - Nitride semiconductor light emitting device, and fabrication method of the same - Google Patents

Nitride semiconductor light emitting device, and fabrication method of the same Download PDF

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KR101678524B1
KR101678524B1 KR1020150061242A KR20150061242A KR101678524B1 KR 101678524 B1 KR101678524 B1 KR 101678524B1 KR 1020150061242 A KR1020150061242 A KR 1020150061242A KR 20150061242 A KR20150061242 A KR 20150061242A KR 101678524 B1 KR101678524 B1 KR 101678524B1
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South Korea
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semiconductor layer
conductive semiconductor
emitting device
layer
active layer
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KR1020150061242A
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Korean (ko)
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KR20160129315A (en
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이승재
최성철
백종협
전성란
김상묵
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한국광기술원
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Priority to KR1020150061242A priority Critical patent/KR101678524B1/en
Priority to PCT/KR2015/006689 priority patent/WO2016163595A1/en
Priority to CN201580078567.3A priority patent/CN107873109A/en
Priority to US15/563,468 priority patent/US10662511B2/en
Priority to JP2017551117A priority patent/JP2018510514A/en
Publication of KR20160129315A publication Critical patent/KR20160129315A/en
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/20—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
    • H01L33/22—Roughened surfaces, e.g. at the interface between epitaxial layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/12—Passive devices, e.g. 2 terminal devices
    • H01L2924/1204—Optical Diode
    • H01L2924/12041—LED

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  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Led Devices (AREA)

Abstract

The present invention relates to a nitride-based semiconductor light emitting device capable of improving electrostatic discharge (ESD) withstand voltage characteristics of a nitride semiconductor light emitting device and a method of manufacturing the same. A first conductive semiconductor layer 120 formed on the substrate 110; A high-resistance semiconductor layer 130 formed on the first conductive semiconductor layer 120; An active layer 150 formed on the high-resistance semiconductor layer 130; And a second conductive semiconductor layer 160 formed on the active layer 150. The first conductive semiconductor layer 120 and the second conductive semiconductor layer 160 are formed on the active layer 150, (V-pit) v1 (v2) structures are formed on adjacent surfaces of the first conductive semiconductor layer 150 and the second conductive semiconductor layer 160, The plane does not include the V-pit structure and is flat.

Description

[0001] NITRIDE SEMICONDUCTOR LIGHT EMITTING DEVICE, AND FABRICATION METHOD OF THE SAME [0002]

The present invention relates to a nitride-based semiconductor light-emitting device and a method of manufacturing the same, and more particularly, to a nitride-based semiconductor light-emitting device capable of improving electrostatic discharge (ESD) withstand voltage characteristics of a nitride semiconductor light-emitting device and a method of manufacturing the same.

In a group III nitride-based light emitting diode, the leakage current is related to reliability, lifetime, and deterioration in high-power operation of the device, which is very important in manufacturing a device that requires reliability.

Group III nitride-based light-emitting devices are generally known to have lower electrostatic properties than other compound light-emitting devices. Because of the lattice mismatch between the substrate and the Group III nitride semiconductor layer, crystal defects generated in the Group III nitride semiconductor layer grown on the substrate are propagated in the growth direction of the Group III nitride semiconductor layer to form a threading dislocation.

These crystal defects increase the leakage current of the device, and when the external static electricity enters, the active layer of the light emitting device having many crystal defects is destroyed by the strong field. Generally, GaN thin films are known to have crystal defects (threading dislocations) of the order of 10 9 to 10 11 / cm 2.

The electrostatic breakdown characteristic of the light emitting device is very important in relation to the application range of the GaN light emitting device. Particularly, designing the device to withstand the static electricity generated from the package equipment and the operator of the light emitting device is a very important variable in order to improve the yield of the final device.

Especially in recent years, since the GaN-based light emitting device is used in applications where outdoor signboards and automobile lighting environments are poorly used, static electricity characteristics are considered to be more important.

In general, ESD of conventional GaN light emitting devices can withstand several thousands of volts in the forward direction under human body mode (HBM) conditions, but can not withstand hundreds of volts in the reverse direction. The reason for this is that crystal defects of the device are the main reason as mentioned above, and the electrode design of the device is also very important. In particular, since GaN light emitting devices adopt a sapphire substrate which is a nonconductor, the n-electrode and the p-electrode are formed on the same surface in the structure of the device, and the current gathering around the n- It is bad.

Various studies have been made to improve the characteristics of light emitting devices and other electronic devices by reducing the through-hole dislocation defect density by introducing various methods.

For example, Japanese Patent Application Laid-Open No. 10-1164026 (Publication Date: 2012.07.18), Laid-Open Patent Publication No. 10-2013-0061981 (Published Date: Laid-open date: 2013.06.12), and Laid-open Patent Publication No. 10-2014-0145368 (Open date: 2014.12.23) introduces growth techniques to form hexagonal v-pits for each threading dislocation and to form v-pits in the active layer to form sidewalls The active layer is formed of a thin layer and has a high bandgap to increase barrier height to minimize non-radiative recombination, thereby increasing internal quantum efficiency. However, in such a structure, since the v-pit region in the active layer is excluded from the light emitting region, there is a problem that the overall light emitting area is reduced and the light output is reduced.

Patent Registration No. 10-1164026 (Publication Date: Jul. 18, 2012) Japanese Patent Application Laid-Open No. 10-2013-0061981 (public date: 2013.06.12) Japanese Patent Application Laid-Open No. 10-2014-0145368 (published on Dec. 23, 2014)

"Suppression of Nonradiative Recombination by V-Shaped Pits in GaInN / GaN Quantum Wells Produces a Large Increase in Light Emission Efficiency"; A. Hangleiter, F. Hitzel, C. Netzel, D. Fuhrmann, U. Rossow, G. Ade, and P. Hinze; PRL 95, 127402 (2005). "Origin of forward leakage current in GaN-based light-emitting devices"; S. W. Lee, D. C. Oh, H. Goto, H. J. Lee, T. Hanada, M. W. Cho, and T. Yao; APPLIED PHYSICS LETTERS 89, 132117 (2006). "Improvement of Light Extraction Efficiency and Reduction of Leakage Current in GaN-Based LED via V-Pit Formation"; Kayo Koike, Seogwoo Lee, Sung Ryong Cho, Jinsub Park, Hyojong Lee, Jun-Seok Ha, Soon-Ku Hong, Hyun-Yong Lee, Meoung-Whan Cho, and Takafumi Yao; IEEE PHOTONICS TECHNOLOGY LETTERS, VOL. 24, NO. 6, MARCH 15, (2012).

The present invention provides a nitride-based semiconductor light-emitting device and a method of manufacturing the same, which can minimize deterioration of the overall uniform light-emitting characteristics when the v-pit structure is applied to improve the reverse voltage characteristics do.

According to an aspect of the present invention, there is provided a light emitting device comprising: a substrate; A first conductive semiconductor layer formed on the substrate; A high-resistance semiconductor layer formed on the first conductive semiconductor layer; An active layer formed on the high-resistance semiconductor layer; And a second conductive semiconductor layer formed on the active layer, wherein adjacent surfaces of the high-resistance semiconductor layer and the first conductive semiconductor layer, and adjacent surfaces of the active layer and the second conductive semiconductor layer, Pit structure, and an adjacent surface of the high-resistance semiconductor layer and the active layer does not include a V-pit structure and is flat.

Preferably, an adjacent surface of the high-resistance semiconductor layer and the active layer is a flat or gently curved surface structure.

Preferably, the second conductive semiconductor layer has a V-pit structure.

Preferably, the high-resistance semiconductor layer has a silicon impurity concentration of 10 18 / cm 3 or less.

Preferably, the high-resistance semiconductor layer has a magnesium impurity concentration of 10 16 / cm 3 or more.

Preferably, the high-resistance semiconductor layer has a thickness of 10 nm to 1000 nm.

Next, a method of manufacturing a nitride-based semiconductor light emitting device according to the present invention includes: a first step of growing a first conductive semiconductor layer on a substrate, and forming a V-pit structure on an upper surface; A second step of forming a high-resistance semiconductor layer on the first conductive semiconductor layer so as to planarize the V-pit structure with a material having a low conductivity; A third step of forming an active layer on the planarized high resistance semiconductor layer and forming a V-pit structure on the upper surface; And a fourth step of forming a second conductive semiconductor layer so that the V-pit structure on the active layer is planarized.

Preferably, the active layer and the second conductive semiconductor layer are formed after the first conductive semiconductor layer is formed on the planarized high-resistance semiconductor layer in the third step.

Preferably, the high-resistance semiconductor layer has a thickness of 10 nm to 1000 nm.

The semiconductor light emitting device according to the present invention may be formed by planarizing a first conductive semiconductor layer having a v-pit structure on a top surface using a low conductivity material and having a v-pit structure on an adjacent surface between the active layer and the second conductive semiconductor layer , And the V-pit region has a critical thickness or more, so that the conductivity is very low, so that the current flow is blocked. However, the other region has a threshold thickness or less so that the current can be transferred to the upper portion, thereby enhancing the leakage current and durability of other elements The non-emission recombination caused by the threading dislocation can be reduced to minimize the decrease in luminous intensity.

1 is a cross-sectional view of a nitride-based light emitting device according to the present invention,
FIG. 2 is a flowchart briefly showing a method of manufacturing a nitride-based light emitting device according to the present invention,
3 (a) and 3 (b) are an SEM image (plan view) (perspective view) showing the V-pit structure on the n-type GaN layer obtained by adjusting the growth conditions,
4 is a TEM cross-sectional image showing the V-pit structure formed in the active layer,
FIGS. 5 (a) and 5 (b) are graphs comparing light emitting characteristics of the light emitting device according to the present invention and light emitting characteristics according to wavelengths of the related art, respectively.

The specific structure or functional description presented in the embodiment of the present invention is merely illustrative for the purpose of illustrating an embodiment according to the concept of the present invention, and embodiments according to the concept of the present invention can be implemented in various forms. And should not be construed as limited to the embodiments described herein, but should be understood to include all modifications, equivalents, and alternatives falling within the spirit and scope of the invention.

In the description of embodiments according to the present invention, when it is described as being formed on the upper or lower side of each component, the upper (upper) or lower (lower) Or one or more other components are formed by being disposed between the two components.

Also, when expressed as 'upper or lower', it may include not only an upward direction but also a downward direction based on one component.

The thickness and size of each layer in the drawings are exaggerated, omitted, or schematically shown for convenience and clarity of explanation. Also, the size of each component does not entirely reflect the actual size.

Hereinafter, embodiments of the present invention will be described in detail with reference to the accompanying drawings.

1 is a cross-sectional view of a light emitting device according to an embodiment of the present invention. A first conductive semiconductor layer 120 (140) formed on the substrate 110; A high-resistance semiconductor layer 130 formed on the first conductive semiconductor layers 120 and 140; An active layer 150 formed on the high-resistance semiconductor layer 130; And a second conductive semiconductor layer 160 formed on the active layer 150. The active layer 150 is formed on the upper surface of the high resistance semiconductor layer 130 and the first conductive semiconductor layer 120, Pit structures v1 and v2 on adjacent surfaces of the first conductive semiconductor layer 160 and the second conductive semiconductor layer 160 and the vicinities of the high resistance semiconductor layer 130 and the active layer 150 have a V- And is flat.

The substrate 110 is provided as a base layer in which a light emitting device is provided, and a transparent material including a sapphire substrate can be used. In addition to sapphire, a GaN based substrate, SiC, Si, ZnO, or the like can be used.

The first conductive semiconductor layer 120 may be an n-type semiconductor layer formed on the substrate 110 to provide electrons to the active layer 150. The first conductive semiconductor layer 120 may be doped with n-type impurities such as Si, Ge, for example, GaN, AlN, AlGaN, InGaN, InN, InAlGaN, AlInN, or the like may be used.

A buffer layer (not shown) for improving lattice matching may be added between the substrate 110 and the first conductive semiconductor layer 120 according to the type of the substrate and the growth process.

A part of the upper surface of the first conductive semiconductor layer 120 is exposed and an electrode 121 is formed on the upper surface thereof.

A transparent electrode 170 made of ITO or the like is formed on the second conductive semiconductor layer 160 and a bonding electrode 171 is formed on the transparent electrode 170.

The second conductive semiconductor layer 160 may be a p-type semiconductor layer formed on the active layer 150 and injecting holes into the active layer 150. The second conductive semiconductor layer 160 may be a p-type semiconductor layer such as Mg, Zn, Ca, For example, GaN, AlN, AlGaN, InGaN, InN, InAlGaN, AlInN, or the like can be used.

The active layer 150 is laminated between the first conductive semiconductor layer 120 and the second conductive semiconductor layer 160 to recombine electrons and holes to generate light having a wavelength corresponding to the transition to a low energy level.

The active layer 150 may be provided by a single or multi-layer quantum well structure formed of, for example, a nitride semiconductor containing indium and gallium.

The first conductive semiconductor layers 120 and 140 are formed in a multilayer structure so that a high resistance semiconductor layer 130 is formed between the first conductive semiconductor layer 120 and the first conductive semiconductor layer 140 .

Particularly, in the present invention, a V-pit structure is formed on each of the lower first conductive semiconductor layer 120 and the high-resistance semiconductor layer 130, and adjacent surfaces of the active layer 150 and the second conductive semiconductor layer 160 (v1) (v2).

Preferably, adjacent surfaces of the high-resistance semiconductor layer 130 and the upper first conductive semiconductor layer 140 are planar or gently curved.

Specifically, the V-pit structure (v1) (v2) is formed around the threading dislocation 101 passing through the light emitting element to prevent the current from concentrating on the threading dislocation 101. [

In this embodiment, the first V-pit structure (v1) may be formed by adjusting growth conditions such as growth temperature, growth rate and atmosphere gas of the lower first conductive semiconductor layer 120, The V-pit structure v1 is planarized with a material having a relatively low conductivity to form the high-resistance semiconductor layer 130 after the V-pit structure v1 is formed on the semiconductor substrate 120. [ The second V-pit structure (v2) can also be formed in the active layer (150) by the same process.

Preferably, the depth of the second V-pit structure V2 can be determined within the range of 100 ANGSTROM to 1 mu m.

Meanwhile, in the present invention, the adjacent surfaces of the high-resistance semiconductor layer 130 and the upper first conductive semiconductor layer 140 have a planar structure, and the 'plane' structure used in the present invention is a planar structure that is strictly mathematically recognized plane, but it should be understood that it includes a gentle curved surface structure within a range not having a V-pit structure.

The high-resistance semiconductor layer 130 may be provided by an n-type compound semiconductor layer or an undoped unintentionally doped semiconductor layer, and preferably the thickness of the high-resistance semiconductor layer 130 Is 10 nm to 1000 nm.

The active layer 150 and the second conductive semiconductor layer 160 are formed on the high resistance semiconductor layer 130 after the upper first conductive semiconductor layer 140 is formed to be thin.

Since the remaining region except for the region where the V-pit structure is formed is less than or equal to the critical thickness, current can be transferred to the second conductive semiconductor layer 160, and the region where the V-pit structure is formed has a critical thickness or more The current is blocked from moving. That is, in general, the current concentrated through the threading dislocation is wrapped with a low-conductivity material to block the leakage current and the durability of other devices, and the non-radiative recombination caused by the threading dislocation is reduced, Can be minimized.

Particularly, the second conductive semiconductor layer 160 formed on the active layer 150 in the state where the inclined plane formed by the v-pit structure exists exists in the portion where the V-shaped distortion structure is present, And carriers are easily injected from the second conductive semiconductor layer 160 on the active layer 150 to the slope of the v shape to facilitate injection of carriers to the bottom of the active layer 150, The light emitting layer can be increased and the efficiency of the entire device can be increased.

On the other hand, the high-resistance semiconductor layer 130 has a low electrical conductivity, thereby improving the lateral current diffusion, thereby obtaining uniform light emission characteristics and reverse voltage characteristics.

Although the first conductive semiconductor layers 120 and 140 have a multi-layer structure in the present embodiment, the first conductive semiconductor layers 120 and 140 may be a single layer structure. In this case, the active layer 150 is formed directly on the high- And the adjacent surfaces of the high-resistance semiconductor layer 130 and the active layer 150 have a planar structure.

On the other hand, as illustrated in FIG. 1, the second conductive semiconductor layer 160 may be a planarized surface, but it may have a v-pit structure on its upper surface.

5A and 5B are graphs showing a comparison of the light emission characteristics of the light emitting device according to the present invention (red line) and the conventional technique (black line), respectively, wherein FIG. 5A shows the PL spectrum , and (b) are graphs showing the EL spectrum of the device.

As can be seen from FIG. 5, the light emitting device of the present invention is improved in PL spectrum and EL spectrum as compared with the prior art.

It will be apparent to those skilled in the art that various modifications and variations can be made in the present invention without departing from the spirit or scope of the inventions. It will be apparent to those of ordinary skill in the art.

101: threading dislocation 110: substrate
120: lower first conductive semiconductor layer 121: electrode
130: high resistance semiconductor layer 140: upper first conductive semiconductor layer
150: active layer 160: second conductive semiconductor layer
170: transparent electrode 171: bonding electrode
v1, v2: V pit structure

Claims (9)

Board;
A first conductive semiconductor layer formed on the substrate;
A high-resistance semiconductor layer formed on the first conductive semiconductor layer;
An active layer formed on the high-resistance semiconductor layer; And
And a second conductive semiconductor layer formed on the active layer,
A V-pit structure is formed on an adjacent surface of the high-resistance semiconductor layer and the first conductive semiconductor layer, and on an adjacent surface of the active layer and the second conductive semiconductor layer in the longitudinal direction at the same position, Wherein the high-resistance semiconductor layer and the adjacent surface of the active layer do not include a V-pit structure and are flat. The nitride-based semiconductor light-emitting device according to claim 1, wherein an adjacent surface of the high-resistance semiconductor layer and the active layer is a planar or gently curved surface. delete The nitride-based semiconductor light-emitting device according to claim 1, wherein the high-resistance semiconductor layer has a silicon impurity concentration of 10 18 / cm 3 or less. The nitride-based semiconductor light-emitting device according to claim 1, wherein the high-resistance semiconductor layer has a magnesium impurity concentration of 10 16 / cm 3 or more. The nitride-based semiconductor light-emitting device according to claim 1, wherein the high-resistance semiconductor layer has a thickness of 10 nm to 1000 nm. A method for manufacturing a nitride-based semiconductor light-emitting device according to any one of claims 1, 2, 4, and 5,
A first step of growing a first conductive semiconductor layer on a substrate, and forming a first V-pit structure on an upper surface;
A second step of forming a high-resistance semiconductor layer on the first conductive semiconductor layer so as to planarize the first V-pit structure with a material having a low conductivity;
A third step of forming an active layer on the planarized high-resistance semiconductor layer, and forming a second V-pit structure on the upper surface at the same position in the longitudinal direction as the first V-pit structure; And
And forming a second conductive semiconductor layer so that the second V-pit structure above the active layer is planarized. 8. The nitride-based semiconductor light-emitting device according to claim 7, wherein the active layer and the second conductive semiconductor layer are formed after the first conductive semiconductor layer is formed on the planarized high-resistance semiconductor layer in the third step Way. 8. The method of manufacturing a nitride-based semiconductor light-emitting device according to claim 7, wherein the high-resistance semiconductor layer has a thickness of 10 nm to 1000 nm.
KR1020150061242A 2015-04-08 2015-04-30 Nitride semiconductor light emitting device, and fabrication method of the same KR101678524B1 (en)

Priority Applications (5)

Application Number Priority Date Filing Date Title
KR1020150061242A KR101678524B1 (en) 2015-04-30 2015-04-30 Nitride semiconductor light emitting device, and fabrication method of the same
PCT/KR2015/006689 WO2016163595A1 (en) 2015-04-08 2015-06-30 Nitride semiconductor light-emitting device, and method for manufacturing same
CN201580078567.3A CN107873109A (en) 2015-04-08 2015-06-30 Nitride-based semiconductor light-emitting device and its manufacture method
US15/563,468 US10662511B2 (en) 2015-04-08 2015-06-30 Nitride semiconductor light-emitting device, and method for manufacturing same
JP2017551117A JP2018510514A (en) 2015-04-08 2015-06-30 Nitride-based semiconductor light-emitting device and manufacturing method thereof

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JP2007081416A (en) * 2005-09-13 2007-03-29 Philips Lumileds Lightng Co Llc Semiconductor light emitting device with lateral current injection in light emitting region

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KR101164026B1 (en) 2007-07-12 2012-07-18 삼성전자주식회사 Nitride semiconductor light emitting device and fabrication method thereof
KR101860320B1 (en) 2011-12-02 2018-05-23 엘지이노텍 주식회사 Light emitting device
KR20140120681A (en) * 2013-04-04 2014-10-14 서울바이오시스 주식회사 Nitride semiconductor device having improved esd characteristics
KR20140145368A (en) 2013-06-13 2014-12-23 엘지이노텍 주식회사 Light Emitting Device

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007081416A (en) * 2005-09-13 2007-03-29 Philips Lumileds Lightng Co Llc Semiconductor light emitting device with lateral current injection in light emitting region

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