KR101672816B1 - 실리콘 옥사이드 및 실리콘 니트라이드중 적어도 하나와 폴리실리콘을 포함하는 기판의 연마 방법 - Google Patents

실리콘 옥사이드 및 실리콘 니트라이드중 적어도 하나와 폴리실리콘을 포함하는 기판의 연마 방법 Download PDF

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Publication number
KR101672816B1
KR101672816B1 KR1020110022827A KR20110022827A KR101672816B1 KR 101672816 B1 KR101672816 B1 KR 101672816B1 KR 1020110022827 A KR1020110022827 A KR 1020110022827A KR 20110022827 A KR20110022827 A KR 20110022827A KR 101672816 B1 KR101672816 B1 KR 101672816B1
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South Korea
Prior art keywords
chemical mechanical
mechanical polishing
substrate
polysilicon
removal rate
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KR1020110022827A
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English (en)
Korean (ko)
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KR20110104444A (ko
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이 구오
젠동 루
쿠마르 레디 칸차를라-아룬
광윤 장
Original Assignee
롬 앤드 하스 일렉트로닉 머티리얼스 씨엠피 홀딩스 인코포레이티드
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/31051—Planarisation of the insulating layers
    • H01L21/31053—Planarisation of the insulating layers involving a dielectric removal step
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/11—Lapping tools
    • B24B37/20—Lapping pads for working plane surfaces
    • B24B37/24—Lapping pads for working plane surfaces characterised by the composition or properties of the pad materials
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24D—TOOLS FOR GRINDING, BUFFING OR SHARPENING
    • B24D18/00—Manufacture of grinding tools or other grinding devices, e.g. wheels, not otherwise provided for
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C09G1/02—Polishing compositions containing abrasives or grinding agents
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02041—Cleaning
    • H01L21/02057—Cleaning during device manufacture
    • H01L21/02068—Cleaning during device manufacture during, before or after processing of conductive layers, e.g. polysilicon or amorphous silicon layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/30625—With simultaneous mechanical treatment, e.g. mechanico-chemical polishing

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Mechanical Engineering (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
KR1020110022827A 2010-03-16 2011-03-15 실리콘 옥사이드 및 실리콘 니트라이드중 적어도 하나와 폴리실리콘을 포함하는 기판의 연마 방법 Active KR101672816B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US12/724,990 2010-03-16
US12/724,990 US8496843B2 (en) 2010-03-16 2010-03-16 Method of polishing a substrate comprising polysilicon and at least one of silicon oxide and silicon nitride

Publications (2)

Publication Number Publication Date
KR20110104444A KR20110104444A (ko) 2011-09-22
KR101672816B1 true KR101672816B1 (ko) 2016-11-04

Family

ID=44558417

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020110022827A Active KR101672816B1 (ko) 2010-03-16 2011-03-15 실리콘 옥사이드 및 실리콘 니트라이드중 적어도 하나와 폴리실리콘을 포함하는 기판의 연마 방법

Country Status (7)

Country Link
US (1) US8496843B2 (enExample)
JP (1) JP5957778B2 (enExample)
KR (1) KR101672816B1 (enExample)
CN (1) CN102201338B (enExample)
DE (1) DE102011013979A1 (enExample)
FR (1) FR2957549B1 (enExample)
TW (1) TWI496878B (enExample)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8491808B2 (en) * 2010-03-16 2013-07-23 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Method of polishing a substrate comprising polysilicon, silicon oxide and silicon nitride
US8492277B2 (en) * 2010-03-16 2013-07-23 Rohm And Haas Electronic Materials Cmp Holdings, Inc Method of polishing a substrate comprising polysilicon and at least one of silicon oxide and silicon nitride
DE102010028461B4 (de) * 2010-04-30 2014-07-10 Globalfoundries Dresden Module One Limited Liability Company & Co. Kg Einebnung eines Materialsystems in einem Halbleiterbauelement unter Anwendung eines nicht-selektiven in-situ zubereiteten Schleifmittels
US8440094B1 (en) * 2011-10-27 2013-05-14 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Method of polishing a substrate
JP7120846B2 (ja) * 2018-08-10 2022-08-17 株式会社フジミインコーポレーテッド 研磨用組成物及びその製造方法並びに研磨方法並びに基板の製造方法

Citations (2)

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Publication number Priority date Publication date Assignee Title
JP2005101545A (ja) * 2003-08-05 2005-04-14 Rohm & Haas Electronic Materials Cmp Holdings Inc 半導体層を研磨するための組成物
JP2009290126A (ja) * 2008-05-30 2009-12-10 Fujifilm Corp 研磨液及び研磨方法

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US2115192A (en) * 1936-06-20 1938-04-26 Rohm & Haas Aryloxy polyalkylene ether sulphonates
US3457107A (en) * 1965-07-20 1969-07-22 Diversey Corp Method and composition for chemically polishing metals
US4091014A (en) * 1976-12-01 1978-05-23 Texaco Development Corporation Process for making ether sulfonates
JPS5657802A (en) * 1979-10-03 1981-05-20 Gen Aniline & Film Corp Aqueous emulsion* surfactant and manufacture
US4283321A (en) * 1979-10-03 1981-08-11 Gaf Corporation Alkyl aryl ethyleneoxy sulfonate surfactants for vinyl acetate polymerization
KR100378180B1 (ko) * 2000-05-22 2003-03-29 삼성전자주식회사 화학기계적 연마 공정용 슬러리 및 이를 이용한 반도체소자의 제조방법
US6743683B2 (en) * 2001-12-04 2004-06-01 Intel Corporation Polysilicon opening polish
US7201647B2 (en) * 2002-06-07 2007-04-10 Praxair Technology, Inc. Subpad having robust, sealed edges
US7247566B2 (en) * 2003-10-23 2007-07-24 Dupont Air Products Nanomaterials Llc CMP method for copper, tungsten, titanium, polysilicon, and other substrates using organosulfonic acids as oxidizers
KR100591719B1 (ko) * 2004-11-09 2006-06-22 삼성전자주식회사 에피텍셜 콘택 플러그 제조방법, 그 제조 방법을 이용한반도체 장치 제조 방법 및 그 제조 방법을 이용한 더블스택형 트랜지스터 제조 방법
US7790618B2 (en) * 2004-12-22 2010-09-07 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Selective slurry for chemical mechanical polishing
US20070077865A1 (en) * 2005-10-04 2007-04-05 Cabot Microelectronics Corporation Method for controlling polysilicon removal
JP2008117807A (ja) * 2006-10-31 2008-05-22 Fujimi Inc 研磨用組成物及び研磨方法
JP5467804B2 (ja) * 2008-07-11 2014-04-09 富士フイルム株式会社 窒化ケイ素用研磨液及び研磨方法
US8119529B2 (en) * 2009-04-29 2012-02-21 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Method for chemical mechanical polishing a substrate
US8491808B2 (en) * 2010-03-16 2013-07-23 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Method of polishing a substrate comprising polysilicon, silicon oxide and silicon nitride
US8492277B2 (en) * 2010-03-16 2013-07-23 Rohm And Haas Electronic Materials Cmp Holdings, Inc Method of polishing a substrate comprising polysilicon and at least one of silicon oxide and silicon nitride

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005101545A (ja) * 2003-08-05 2005-04-14 Rohm & Haas Electronic Materials Cmp Holdings Inc 半導体層を研磨するための組成物
JP2009290126A (ja) * 2008-05-30 2009-12-10 Fujifilm Corp 研磨液及び研磨方法

Also Published As

Publication number Publication date
CN102201338B (zh) 2013-10-02
TWI496878B (zh) 2015-08-21
US20110230050A1 (en) 2011-09-22
JP5957778B2 (ja) 2016-07-27
FR2957549A1 (fr) 2011-09-23
DE102011013979A1 (de) 2014-02-13
CN102201338A (zh) 2011-09-28
JP2011205097A (ja) 2011-10-13
FR2957549B1 (fr) 2015-08-21
US8496843B2 (en) 2013-07-30
KR20110104444A (ko) 2011-09-22
TW201144418A (en) 2011-12-16

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