KR101661971B1 - An electric contact terminal and method making the same - Google Patents

An electric contact terminal and method making the same Download PDF

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Publication number
KR101661971B1
KR101661971B1 KR1020160045826A KR20160045826A KR101661971B1 KR 101661971 B1 KR101661971 B1 KR 101661971B1 KR 1020160045826 A KR1020160045826 A KR 1020160045826A KR 20160045826 A KR20160045826 A KR 20160045826A KR 101661971 B1 KR101661971 B1 KR 101661971B1
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South Korea
Prior art keywords
metal layer
metal
conductive silicon
silicon
metal powder
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KR1020160045826A
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Korean (ko)
Inventor
임은아
박희정
김유나
김용우
정철화
이상원
김효민
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두성산업 주식회사
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01R—ELECTRICALLY-CONDUCTIVE CONNECTIONS; STRUCTURAL ASSOCIATIONS OF A PLURALITY OF MUTUALLY-INSULATED ELECTRICAL CONNECTING ELEMENTS; COUPLING DEVICES; CURRENT COLLECTORS
    • H01R11/00—Individual connecting elements providing two or more spaced connecting locations for conductive members which are, or may be, thereby interconnected, e.g. end pieces for wires or cables supported by the wire or cable and having means for facilitating electrical connection to some other wire, terminal, or conductive member, blocks of binding posts
    • H01R11/11—End pieces or tapping pieces for wires, supported by the wire and for facilitating electrical connection to some other wire, terminal or conductive member
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01R—ELECTRICALLY-CONDUCTIVE CONNECTIONS; STRUCTURAL ASSOCIATIONS OF A PLURALITY OF MUTUALLY-INSULATED ELECTRICAL CONNECTING ELEMENTS; COUPLING DEVICES; CURRENT COLLECTORS
    • H01R13/00—Details of coupling devices of the kinds covered by groups H01R12/70 or H01R24/00 - H01R33/00
    • H01R13/02—Contact members
    • H01R13/03—Contact members characterised by the material, e.g. plating, or coating materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01R—ELECTRICALLY-CONDUCTIVE CONNECTIONS; STRUCTURAL ASSOCIATIONS OF A PLURALITY OF MUTUALLY-INSULATED ELECTRICAL CONNECTING ELEMENTS; COUPLING DEVICES; CURRENT COLLECTORS
    • H01R13/00—Details of coupling devices of the kinds covered by groups H01R12/70 or H01R24/00 - H01R33/00
    • H01R13/02—Contact members
    • H01R13/22—Contacts for co-operating by abutting
    • H01R13/24—Contacts for co-operating by abutting resilient; resiliently-mounted
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01R—ELECTRICALLY-CONDUCTIVE CONNECTIONS; STRUCTURAL ASSOCIATIONS OF A PLURALITY OF MUTUALLY-INSULATED ELECTRICAL CONNECTING ELEMENTS; COUPLING DEVICES; CURRENT COLLECTORS
    • H01R43/00—Apparatus or processes specially adapted for manufacturing, assembling, maintaining, or repairing of line connectors or current collectors or for joining electric conductors
    • H01R43/20—Apparatus or processes specially adapted for manufacturing, assembling, maintaining, or repairing of line connectors or current collectors or for joining electric conductors for assembling or disassembling contact members with insulating base, case or sleeve
    • H01R43/24—Assembling by moulding on contact members

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  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Electric Connection Of Electric Components To Printed Circuits (AREA)

Abstract

An electrical contact terminal is provided. The electrical contact terminal comprises a first metal layer in sheet form, a second metal layer disposed in parallel to and spaced apart from the first metal layer, and a solid conductive silicon layer between the first metal layer and the second metal layer, Wherein the first metal layer, the second metal layer, and the solid conductive silicon are pressed by a hot press to bond the first metal layer and the second metal layer to the upper and lower surfaces of the solid conductive silicon.

Description

BACKGROUND OF THE INVENTION 1. Field of the Invention [0001] The present invention relates to an electric contact terminal,

The present invention relates to an electrical contact terminal and a method of manufacturing the same, and more particularly, to an electrical contact terminal which exhibits remarkable electrical properties and is excellent in durability and improved in soldering stability in a soldering process, and a method of manufacturing the same.

In the electronic and telecommunication industries, the demand for the reduction of the process cost and the miniaturization technology of the product are dealt with seriously, and thus complicated electronic circuits and dense integrated circuits are mass produced. Surface Mount Technology (SMT) is an automation technology that places electronic components on a printed circuit board (PCB) and attaches them by applying high temperature. Through such SMT process, it is possible to improve the quality of electrical contact between electronic components, And further miniaturization of the product becomes possible.

A conductive contact terminal can be interposed between the electronic component and the circuit board or between the electronic component and the electronic component for bonding. In general, since the height of the junction varies depending on the circuit, the conductive contact terminal may be deformed to fit the height of the junction, or a metallic contact element having elasticity may be used. In order to prevent the problem of the electrical connection failure due to the unevenness of the bonding surfaces themselves or the nonconformity of the bonding dimensions, it has been necessary to provide a conductive contact terminal with elasticity at such bonding regions. Korean Utility Model No. 390490, An elastic rubber coating, a conductive elastic rubber coating layer surrounding the elastic rubber, and a surface mounting electrical contact terminal provided with a metal foil.

The surface mounting process involving reflow soldering proceeds at a high temperature of 180 to 270 DEG C. When a conventional conductive material is simply used, the product is deformed to lose its conductivity and can not actually serve as a conductive contact terminal. It is necessary to use a contact terminal suitable for the mounting process. Thus, in order to prevent thermal degeneration of the contact terminal, conventionally, a conductive contact terminal made of a metal having elastic resilience such as a beryllium copper alloy may be used. However, even in the case of beryllium copper, since the elasticity is limited, there is a problem that it is difficult to apply it when the height of the portion to be electrically connected is large.

The conventional electrical contact terminal has a problem that the surface of the metal powder is oxidized to deform the conductive silicon and the resistance increases.

In addition, since the conventional electrical contact terminal requires the use of a separate conductive adhesive for bonding between the metal foil and the conductive silicon, there is a problem that the electrical resistance is lowered as a whole, and oxidation or elasticity of the metal powder exposed to high temperatures during soldering There is a problem that the electrical resistance is lowered due to expansion of the silicon.

On the other hand, if a separate conductive adhesive is not used, the adhesion between the metal foil and the conductive silicon may be deteriorated and / or the electrical properties may be deteriorated. Specifically, the conductive particles contained in the conductive silicon affect the electrical properties such as electrical resistance of the electrical contact terminals, and if the content is low, the desired electrical properties can not be achieved. In order to solve this problem, conversely, when the content of the conductive particles is increased, a problem of deterioration of the adhesion between the metal foil and the conductive silicon may occur without a separate adhesive layer. Such deterioration of the adhesion may be caused by peeling of the metal layer and contact between the metal layer and the conductive silicon There is a problem that it may be accompanied with a problem of deterioration of electrical properties due to interface separation.

Further, in the cutting process of the electrical contact terminal, the end of the electrical contact terminal can not be cut cleanly and wrinkles are generated, resulting in deterioration in electrical connectivity and defective soldering between the substrate / electrical contact terminal / electronic components.

One embodiment of the present invention is to provide an electric device which exhibits remarkably excellent electrical properties, has durability that can maintain such physical property continuously, and prevents wrinkles on the cut surfaces, A contact terminal, a method of manufacturing the same, and an electronic device substrate including the contact terminal.

In order to solve the above-described problems, a first embodiment of the present invention is a sheet-shaped first metal layer; A second metal layer disposed parallel to and spaced apart from the first metal layer; And a solid conductive silicon layer comprising silicon and a metal powder and pressed between the first metal layer and the second metal layer by a hot press to adhere to each metal layer.

According to an embodiment of the present invention, the widths of the first metal layer and the second metal layer are the same, and reflow soldering can be performed only in the first metal layer or the second metal layer.

The thickness of the conductive silicon may be 0.1 to 3.0 mm.

In addition, the metal powder may include at least one of silver, nickel, copper, and nickel.

The metal powder may contain 19 to 23 parts by weight of silicon per 100 parts by weight of the metal powder.

In addition, in the cumulative weight distribution of the metal powders, the particle diameter of the metal powder corresponding to the cumulative weight of 50% may be 32 to 41 탆. At this time, in the cumulative weight distribution of the metal powder by the particle size, the value according to the following Equation 1 may be 1.8 or less.

[Equation 1]

Figure 112016035893751-pat00001

Also, the electrical resistance of the conductive silicon may be in the range of 10 to 200 mΩ.

In addition, the thickness of the first metal layer and the second metal layer may be 30 탆 to 100 탆.

According to another aspect of the present invention, there is provided a method of manufacturing a semiconductor device, comprising: laminating a first metal layer on a mold formed inside a mold and stacking solid conductive silicon on the first metal layer; Laminating a second metal layer on the solid conductive silicon top surface; And adhering the first metal layer and the second metal layer to the solid conductive silicon by pressing the metal mold with a hot press to thereby form an electrical contact terminal according to the first embodiment of the present invention.

According to one embodiment of the present invention, the compression with the hot press can be performed at a temperature of 160 to 180 DEG C and a pressure of 1900 to 2100 psi for 2 to 10 minutes.

The method may further include the step of cutting the stacked body having the conductive silicon interposed between the first metal layer and the second metal layer to a standardized size.

In order to solve the above-described problems, a second embodiment of the present invention provides a semiconductor device comprising: a sheet-shaped third metal layer; And a solid conductive silicon containing silicon and metal powder, pressed by a hot press and bonded to one surface of the third metal layer; And an electrical contact terminal.

According to an embodiment of the present invention, reflow soldering can be performed in the third metal layer.

The thickness of the conductive silicon may be 0.1 to 3.0 mm.

In addition, the metal powder may include at least one of silver, nickel, copper, and nickel.

The metal powder may contain 19 to 23 parts by weight of silicon per 100 parts by weight of the metal powder.

In addition, in the cumulative weight distribution of the metal powders, the particle diameter of the metal powder corresponding to the cumulative weight of 50% may be 32 to 41 탆. At this time, in the cumulative weight distribution of the metal powder by the particle size, the value according to the following Equation 1 may be 1.8 or less.

[Equation 1]

Figure 112016035893751-pat00002

Also, the electrical resistance of the conductive silicon may be in the range of 10 to 200 mΩ.

In addition, the thickness of the third metal layer may be 30 탆 to 100 탆, more preferably 50 to 80 탆.

In addition, the present invention provides a method of manufacturing an electrical contact terminal according to the second embodiment of the present invention, including the step of pressing the metal mold with a hot press to bond the solid conductive silicon and the first metal layer.

According to one embodiment of the present invention, the compression with the hot press can be performed at a temperature of 160 to 180 DEG C and a pressure of 1900 to 2100 psi for 2 to 10 minutes.

According to another aspect of the present invention, And an electrical contact terminal according to the present invention, which is soldered and fixed to the printed wiring board.

The electrical contact terminal and the method of manufacturing the same according to an embodiment of the present invention prevent the conductive silicon from being deformed by oxidizing the surface of the metal powder and maintain the electrical resistance and prevent the expansion of the elastic body exposed to high temperatures in the soldering process So that electrical resistance can be maintained.

In addition, the electrical contact terminal and the method of manufacturing the same according to an embodiment of the present invention can omit the step of bonding the metal layer and the conductive silicon with another adhesive without using a separate conductive adhesive, , It can exhibit high electrical properties and adhesiveness at the same time and can exhibit excellent electrical properties for a long time even though no separate adhesive is used.

Further, since the soldering process is excellent in stability during the soldering process, it is possible to maintain the increased adhesion and electrical connectivity.

Furthermore, since the first metal layer and the second metal layer are formed in the same manner as the first embodiment, the electrical contact terminal and the method of manufacturing the same according to the embodiment of the present invention can be packed without separating up and down when the electrical contact terminal is packed, .

1 is a sectional view of an electrical contact terminal according to an embodiment of the present invention,
FIG. 2 is a flowchart illustrating a method of manufacturing an electrical contact terminal according to an embodiment of the present invention, and FIG.
3 is a cross-sectional view of an electrical contact terminal according to an embodiment of the present invention.

Hereinafter, exemplary embodiments of the present invention will be described in detail with reference to the accompanying drawings, which will be readily apparent to those skilled in the art to which the present invention pertains. The present invention may be embodied in many different forms and is not limited to the embodiments described herein. In order to clearly illustrate the present invention, parts not related to the description are omitted, and the same reference numerals are assigned to the same or similar components throughout the specification.

Hereinafter, exemplary embodiments of the present invention will be described in detail with reference to the accompanying drawings, which will be readily apparent to those skilled in the art to which the present invention pertains. The present invention may be embodied in many different forms and is not limited to the embodiments described herein. In order to clearly illustrate the present invention, parts not related to the description are omitted, and the same or similar components are denoted by the same reference numerals throughout the specification.

In this specification, the terms "comprises" or "having" and the like refer to the presence of stated features, integers, steps, operations, elements, components, or combinations thereof, But do not preclude the presence or addition of one or more other features, integers, steps, operations, components, parts, or combinations thereof. Also, where a section such as a layer, a film, an area, a plate, or the like is referred to as being "on" another section, it includes not only the case where it is "directly on" another part but also the case where there is another part in between. On the contrary, where a section such as a layer, a film, an area, a plate, etc. is referred to as being "under" another section, this includes not only the case where the section is "directly underneath"

Hereinafter, an electrical contact terminal and a method of manufacturing the same according to an embodiment of the present invention will be described in detail with reference to the drawings.

1 is a cross-sectional view of an electrical contact terminal according to a first embodiment of the present invention.

Referring to FIG. 1, an electrical contact terminal 1 according to a first embodiment of the present invention includes a first metal layer 10, a second metal layer 30, and a solid conductive silicon 50.

At this time, the electrical contact terminal 1 is formed by pressing a first metal layer 10, a second metal layer 30 and a solid conductive silicon 50 by a hot press to form a first metal layer 10 And the second metal layer 20 are bonded.

Referring to FIG. 1, in an embodiment of the present invention, the first metal layer 10 may be in the form of a sheet, and the solid conductive silicon 50 may be laminated on the upper surface thereof to support the solid conductive silicon.

The thickness of the first metal layer 10 may be 30 탆 to 100 탆, and more preferably 30 to 50 탆. If the thickness of the first metal layer is less than 30 占 퐉, it is too thin to form a clean cut surface such as a wrinkle on the cut end surface at the time of cutting, so that the interface between the substrate and the contact terminal does not adhere to the substrate during mounting on the substrate, There is a problem in that soldering irregularity and electrical connectivity are deteriorated. Also, there may be a problem that the reflow soldering itself does not work properly. Furthermore, when the metal powder protrudes on the surface of the conductive silicon to which the first metal layer is bonded, pinholes may be formed by the metal powder protruding from the metal layer, and the pinhole may have a problem of deteriorating electrical characteristics. If the thickness of the metal layer exceeds 100 탆, cutting may not be easily performed at regular intervals, and the manufacturing cost may increase.

The first metal layer 10 may be made of any one of copper, tin and copper alloy, and gold and copper alloy so as to prevent corrosion and facilitate soldering. At this time, according to an embodiment of the present invention, a plating layer may be additionally formed under the first metal layer, or the first metal layer itself may include a plating layer.

Referring to FIG. 1, the width of the first metal layer 10 may be equal to the width of the conductive silicon 50, and the reflow soldering may be performed on the lower surface of the first metal layer.

The second metal layer 30 may be disposed on the upper side of the first metal layer 10 in parallel with the first metal layer 10. The second metal layer 30 may have the same width, thickness, and the same material as the first metal layer 10. When the second metal layer is formed in the same width and thickness as the first metal layer, it is possible to package the electrical contact terminal 1 without separating the upper and lower portions, thereby shortening the packaging time for packaging the electrical contact terminal.

The width of the second metal layer 30 may be the same as the width of the conductive silicon 50, and the reflow soldering may be performed on the lower surface of the second metal layer.

At this time, according to an embodiment of the present invention, a plating layer may be additionally formed on the second metal layer 30, or the second metal layer 30 itself may include a plating layer.

1, in an embodiment of the present invention, the solid conductive silicon 50 is positioned between the first metal layer 10 and the second metal layer 30 to form the upper surface of the first metal layer, As shown in FIG.

Also, the conductive silicon 50 can be formed in solid or solid form in the molding process.

The shape of the conductive silicon 50 is not limited, but it may preferably be a sheet shape and the thickness may be 0.1 mm to 3.0 mm or less. If the thickness of the conductive silicon 50 is less than 0.1 mm, the conductivity is lowered. If the thickness exceeds 3.0 mm, cutting is not easy. In this case, the hardness (Shore A) of the conductive silicon (50) may be 40 to 80 and the electrical resistivity may be 10 to 200 m ?.

The thickness, the electric resistance and the hardness of the conductive silicon 50 are not limited to those in consideration of the restoring force and economical efficiency of the conductive silicon.

On the other hand, the conductive silicon 50 includes silicon and a metal powder, and the mixing ratio of the metal powder may include 19 to 23 parts by weight of silicon relative to 100 parts by weight of the metal powder. If the amount of silicon is less than 19 parts by weight, adhesion between the metal layer and the conductive silicon is remarkably deteriorated. The metal powder may be separated from the exposed surface of the conductive silicon during use, There may be a problem that detachment of the metal powder is accompanied with deterioration of electrical properties such as lowering of durability, lowering of electric drop of the electric contact terminal, lowering of electric connection property. If silicon is contained in an amount exceeding 23 parts by weight, there may be a problem that the adhesive property can be excellent but the desired electrical properties can not be exhibited.

Since the silicon may be silicon commonly used in the art, it is not particularly limited in the present invention.

In addition, the metal powder may include one or more powders of silver, nickel, silver / copper, and nickel / copper metal powder. The powder shape of the metal powder includes an irregular shape including a spherical shape and a regular shape, and therefore, the powder is not particularly limited in the present invention. The metal powder may have a particle size of 32 to 41 탆, more preferably 35 to 40 탆, of the metal powder corresponding to the cumulative weight of 50% in the cumulative weight distribution by particle size. Even when the content of the metal powder in the above-described conductive silicon is satisfied, the desired degree of physical properties may vary depending on the particle diameter of the metal powder. The metal powder may have a particle diameter of 32 to 41 탆, Is 1.8 or less, and more preferably 1.6 or less, it is possible to exhibit a synergistic effect remarkably superior in electrical characteristics such as the adhesion between the metal layer and the conductive silicon and the electrical resistance of the contact terminal.

 [Equation 1]

Figure 112016035893751-pat00003

If the particle size of the metal powder corresponding to the cumulative weight of 50% in the cumulative weight distribution by particle size is less than 32 탆, it is difficult to separate the metal powders from each other due to the silicon exhibiting the insulating characteristics, If the thickness exceeds 41 탆, metal powder may protrude from the surface of the conductive silicon, thereby causing damage to the metal layer adhering to the protruded surface, or the surface of the metal layer becoming rugged There is a problem that adhesion to the substrate or the electric part and the interface is reduced, thereby reducing electrical connectivity.

If the value according to Equation (1) exceeds 1.8, the above-mentioned protrusion of the conductive silicon surface may be enlarged as the particle diameter of a part of the metal powder becomes very large, and as the surface of the conductive silicon becomes rough and coarse, The damage may be exacerbated such that the durability and electrical characteristic deterioration may become significant.

Since the upper and lower surfaces of the conductive silicon 50 are protected by the metal layers 10 and 30, the surface of the metal powder contained in the conductive silicon 50 is oxidized in the electrical contact terminal 1 according to the embodiment of the present invention .

Accordingly, the electrical contact terminal 1 according to the embodiment of the present invention can prevent the metal powder, which is located on the conductive silicon surface, from being in contact with oxygen in the air, so that the electrical resistance of the metal powder is increased, Oxidation of the metal powder exposed to a high temperature during soldering or swelling of the conductive silicon which is an elastic body can be prevented, and electrical resistance can be maintained.

In addition, the electrical contact terminal 1 according to an embodiment of the present invention can pressurize the adhesion between the metal layers 10 and 30 and the conductive silicon 50 by a hot press to omit the use of a separate conductive adhesive, The surface of the formed end is flat without wrinkles, so that the soldering process is easy, the soldering stability is improved, and the electrical connectivity and adhesion with the substrate can be improved. Furthermore, since the adhesion between the metal layer and the conductive silicon is excellent, it is possible to prevent a problem of deterioration in electrical characteristics due to generation of voids due to interface separation between the metal layer and conductive silicon that may occur during use.

2 is a flowchart illustrating a method of manufacturing an electrical contact terminal according to a first embodiment of the present invention.

Referring to FIG. 2, a method of manufacturing an electrical contact terminal according to an exemplary embodiment of the present invention includes the steps of (S10) stacking a first metal layer on a mold formed inside a metal mold, A step (S20) of laminating a second metal layer on the upper surface, and a step (S30) of bonding the first metal layer and the second metal layer to the solid conductive silicon by pressing the metal mold with a hot press.

As a result, the surface of the metal powder is oxidized to prevent the deterioration of the physical properties of the conductive silicon 50, so that the electrical resistance can be maintained, and the expansion of the conductive silicon 50, which is an elastic body exposed to high temperatures during soldering, . Further, the adhesion between the metal layers 10 and 30 and the conductive silicon 50 can be omitted by using a hot press to bond them with a separate adhesive without using a separate conductive adhesive.

Referring to FIG. 2, in a first step S10 of the present invention, a first metal layer 10 is laid on a mold having a predetermined area and a predetermined thickness inside a mold, and a solid conductive silicon 50 is formed thereon. Laminated. At this time, the area and thickness of the frame can be variously formed according to the size and shape of the electrical contact terminal to be manufactured.

In the second step S20, the second metal layer 30 is laminated on the upper surface of the solid conductive silicon layer 50 stacked on the upper surface of the first metal layer 10.

Referring to FIG. 2, in a third step S30 of bonding the first metal layer and the second metal layer to the solid conductive silicon by pressing the metal mold by a hot press in the embodiment of the present invention, / RTI > to < RTI ID = 0.0 > 2100 psi. ≪ / RTI > At this time, the pressing time with the hot press may be 2 to 10 minutes. The temperature, the pressure, and the compression time are suitably adjusted according to the type of the silicon material used, so that the adhesive silicone resin 50 can be adhered to the first metal layer 10 and the second metal layer 30 without using a separate conductive adhesive agent. .

Meanwhile, the specific conditions for the heating / pressing according to the embodiment of the present invention may be changed according to the specific type of the silicon material used, but the present invention is not limited thereto.

Meanwhile, after the laminate is manufactured by bonding the first metal layer and the second metal layer with the solid conductive silicone by pressing the mold with a hot press, the fourth step S40 of cutting the laminate into a standardized size after being separated from the mold, As shown in FIG.

Since the standardized size can be appropriately selected in consideration of the product to be applied, the size of the substrate to be mounted, and the size of the electronic component, the present invention is not particularly limited thereto.

An electrical contact terminal according to an embodiment of the present invention and a method of manufacturing the same may be manufactured by stacking a second metal layer 30 on the upper surface of the conductive silicon 50 to prevent the conductive silicon from being deformed by oxidizing the surface of the metal powder, And the expansion of the conductive silicon which is an elastic body exposed to a high temperature during soldering can be prevented, and electrical resistance can be maintained.

Further, the adhesion between the metal layers 10 and 30 and the conductive silicon 50 can be omitted by using a hot press to bond them with a separate adhesive without using a separate conductive adhesive.

A method of manufacturing an electrical contact terminal according to an embodiment of the present invention includes positioning first and second metal layers for forming an electrical contact terminal in a previously formed metal mold, and solid conductive silicon, The thickness of the electrical contact terminals can be uniformly formed as a whole, and the thickness, size, and shape of the electrical contact terminals to be manufactured can be easily selected and manufactured according to a desired one.

3 is a cross-sectional view of an electrical contact terminal according to a second embodiment of the present invention, which includes a sheet-like third metal layer 110; And a solid conductive silicon (150) comprising silicon and a metal powder, compressed in a hot press and bonded to one surface of the first metal layer; .

The description of the third metal layer and the conductive silicon in the second embodiment is the same as the description of the first metal layer (and / or the second metal layer) and the conductive silicon in the first embodiment described above, The difference between the second embodiment and the first embodiment described above will be mainly described.

The thickness of the third metal layer 110 may be in the range of 30 탆 to 100 탆, and more preferably, the first metal layer and / or the second metal layer may be thicker than the first metal layer and / And may be 50 to 80 탆 in thickness. If the thickness of the third metal layer is less than 30 탆, it is too thin to form a clean cut surface, such as wrinkles on the cut end surface at the time of cutting, so that the interface between the substrate and the contact terminal does not adhere to the substrate during mounting on the substrate, There is a problem in that soldering irregularity and electrical connectivity are deteriorated. Also, there may be a problem that the reflow soldering itself does not work properly. If the thickness of the third metal layer exceeds 100 mu m, cutting may not be easily performed at regular intervals and the manufacturing cost may increase.

The shape of the conductive silicon 150 is not limited, but it may be a sheet, and the thickness may be 0.1 mm to 3.0 mm. If the thickness of the conductive silicon 50 is less than 0.1 mm, the conductivity is lowered. If the thickness exceeds 3.0 mm, cutting is not easy. In this case, the hardness (Shore A) of the conductive silicon (50) may be 40 to 80 and the electrical resistivity may be 10 to 200 m ?.

In the first embodiment described above, the first metal layer 10 and the second metal layer 30 are provided on the upper and lower portions of the conductive silicon 50, respectively, and the respective metal layers are bonded to the conductive silicon. A third metal layer 110 is provided on one surface of the conductive silicon 150 and an electrical contact terminal is formed on the other surface of the conductive silicon 150 without a metal layer.

The electrical contact terminal according to the second embodiment can improve the adhesion between the substrate and the contact terminal, and thus can be excellent in terms of conductivity. Further, in the step of cutting the electrical contact terminal to a desired size, the metal layer can improve the effective number of cutting members such as a knife used for cutting, and can be more easily cut. In addition, the cutting can be made easier and the cut shape can be cleaner.

On the other hand, the first embodiment can remarkably improve durability in terms of product shape maintenance and prevention of oxidation of electrical contact terminals.

In addition, the electrical contact terminal according to the second embodiment may include a step of stacking a third metal layer on a mold formed inside a mold and stacking solid conductive silicon on the third metal layer, And pressing the metal mold with a hot press to bond the solid conductive silicon to the third metal layer.

Each step is the same as the manufacturing method according to the first embodiment except that a metal layer is provided only on one side of the conductive silicon, and a detailed description thereof will be omitted.

On the other hand, in the manufacturing method according to the second embodiment, when one side of the conductive silicon is directly contacted with heat when the metal mold is compressed by hot pressing, there may be a problem that the conductive silicon sticks or appears on the metal mold. In the mold used in the manufacturing method according to the second embodiment, the inner surface of the mold directly facing the conductive silicon may be surface treated so that the conductive silicon does not stick to the inner surface.

Since the electrical contact terminals according to the embodiments of the present invention are fixed to the printed wiring board through soldering and have durability to connect and maintain the interfaces between the electronic components and the substrate with very good electrical characteristics It can be widely applied to an electronic apparatus including a substrate for an electronic device. The printed wiring board may be a substrate such as FCCB or PCB known in the art, and is not particularly limited in the present invention.

≪ Example 1 >

22.33 parts by weight of a silicone resin (KE-1417, manufactured by Shinetu) and 100 parts by weight of a curing agent (CX-32-2445, Shinetu) were added to 100 parts by weight of silver powder having a particle size distribution shown in Table 1 below, Ltd.) were mixed to prepare a conductive silicone composition. The conductive silicone composition was prepared in the form of a sheet having a thickness of 700 mu m through a known method. Thereafter, a first metal layer (35 占 퐉 thick, tin-plated copper), conductive silicon and a second metal layer (35 占 퐉 thick, tin-plated copper) were laminated on the metal mold and hot pressed at 165 占 폚 and 1980 psi pressure for 3 minutes, The first metal layer and the second metal layer were adhered to both surfaces of the sheet, respectively, and then separated from the mold and cut to a width of 1 cm x 1 cm to prepare an electrical contact terminal.

≪ Examples 2 to 16 >

The electrical contact terminals as shown in Tables 1 and 2 were prepared by changing the particle size distribution of the metal powder, the metal powder content, the thickness of the metal layer, and the like as shown in Table 1 or Table 2 below .

≪ Example 17 >

Except that the first metal layer (35 占 퐉 thick, tin-plated copper) and the conductive silicon were laminated on the metal mold at 165 占 폚 and 1980 psi pressure for 3 minutes The resultant was heat-pressed to allow the first metal layer to adhere to one surface of the conductive silicone sheet, and then separated from the mold and cut to a width of 1 cm x 1 cm to prepare an electrical contact terminal. At this time, the inner surface of the metal mold facing directly to the conductive silicon sheet was subjected to a surface treatment so as not to adhere conductive silicon.

<Comparative Example>

(YDF-170, Kukdo Chemical Co., Ltd.) was used instead of the silicone resin, and the curing agent was replaced with TD-2106 (DIC Co., Ltd.) .

<Experimental Example>

The following properties of the electrical contact terminals manufactured in Examples and Comparative Examples were evaluated and shown in Tables 1 and 2 below.

1. Adhesion

After the sample was fixed to the vise, the load cell of the measuring device (POMEAS, HSV-500) was operated at a speed of 300 mm / min to measure the adhesive strength.

2. Surface resistance

A specimen of 40 mm × 40 mm in length and width was placed between the contact resistance measuring jigs and the value obtained when the contact resistance value constantly appeared through a contact resistance meter (Multi Tester, HIOKI 3540) was read and measured.

3. Cutting ease

The laminate separated from the mold was cut to a width of 1 cm x 1 cm to evaluate the ease of cutting when the electrical contact terminal was manufactured. Respectively.

4. Cut shape goodness

The shape of the cut end metal layer of the electrical contact terminal was observed with an optical microscope. As a result of the observation, the surface of the metal layer at the end was smoothly and cleanly cut to 0, the surface was crooked, wrinkled, and /

5. Soldering Stability

The solder cream was applied to the PCB board using a metal mask, the electrical contact terminals were placed on the solder cream, and soldering was performed through reflow. After performing the above-described reflow soldering method on 100 electrical contact terminals, whether soldering was bad or not was visually observed and evaluated. The number of soldering (or mounting) defective electrical contact terminals was counted, .

<Number of electrical contact terminals with poor soldering>

Less than 2: 5 Less than 2 to 4: 4

Less than 4 ~ 6: Less than 6 ~ 8: 2

Less than 8 ~ 10: 1 10 or more: 0

Example 1 Example 2 Example 3 Example 4 Example 5 Example 6 Example 7 Example 8 Example 9 Conductivity
Silicone forming composition Silicone resin content
(Parts by weight 1) ) 22.33 21.55 196 23.30 22.8 18.23 22.33 22.33 22.33 Hardener content
(Parts by weight 1) ) 0.38 0.37 0.33 0.42 0.33 0.32 0.38 0.38 0.38 Electrical contact terminal The first metal layer (mu m) 38 38 38 38 38 38 23 28 31 Metal in conductive silicon
powder Particle size
(탆) X 50 2) 39.17 39.17 39.17 39.17 39.17 39.17 39.17 39.17 39.17 X 10 3) 19.67 19.67 19.67 19.67 19.67 19.67 19.67 19.67 19.67 X 90 4) 81.56 81.56 81.56 81.56 81.56 81.56 81.56 81.56 81.56 Equation 1 1.58 1.58 1.58 1.58 1.58 1.58 1.58 1.58 1.58 Content (% by weight) 81.5 82 83.7 80.8 81.21 84.3 81.5 81.5 81.5 The second metal layer (mu m) 38 38 38 38 38 38 23 28 31 Adhesion (kgf / cm2) 56 55.6 54.8 65 57.4 46.4 52.1 53.3 54.4 Surface Resistance (mΩ) 132.0 127 110 153 136 104 123 126 137 Cutting ease 5 5 5 5 5 5 5 5 5 Cut shape goodness 0 0 0 0 0 0 2 3 0 Soldering Stability 5 5 5 5 5 5 3 2 5 1) 100 parts by weight of metal powder
2) The particle diameter of the metal powder corresponding to the cumulative weight of 50% in the cumulative weight distribution of the metal powder
3) The particle diameter of the metal powder corresponding to the cumulative weight of 10% in the cumulative weight distribution of the metal powder
4) The particle diameter of the metal powder corresponding to the cumulative weight of 90% in the cumulative weight distribution of the metal powder

Example 10 Example 11 Example 12 Example 13 Example 14 Example 15 Example 16 Example 17 Comparative Example 1 Conductivity
Silicone forming composition Silicone resin content
(Parts by weight 1 ) ) 22.33 22.33 22.33 22.33 22.33 22.33 22.33 22.33 22.33 Hardener content
(Parts by weight 1 ) ) 0.38 0.38 0.38 0.38 0.38 0.38 0.38 0.38 0.38 Electrical contact terminal The first metal layer (mu m) 48 52 38 38 38 38 38 65 38 Metal in conductive silicon
powder Particle size
(탆) X 50 2) 39.17 39.17 33.24 31.68 42.02 34.55 35.81 39.17 39.17 X 10 3) 19.67 19.67 17.12 16.12 21.16 16.41 16.17 19.67 19.67 X 90 4) 81.56 81.56 71.62 65.66 88.18 77.74 84.65 81.56 81.56 Equation 1 1.58 1.58 1.64 1.56 1.59 1.78 1.91 1.58 1.58 content
(weight%) 81.5 81.5 81.5 81.5 81.5 81.5 81.5 81.5 81.5 The second metal layer (mu m) 48 52 38 38 38 38 38 Not included 38 Adhesion (kgf / cm2) 55.6 55.2 56.3 56.5 49.1 53.3 51.7 55.5 42 Surface Resistance (mΩ) 143 154 136 145.8 137 134 137 104 132 Cutting ease 4 2 5 5 5 5 5 5 3 Cut shape goodness One 3 0 0 0 0 0 0 2 Soldering Stability 5 2 5 5 3 4 3 5 5 1) 100 parts by weight of metal powder
2) The particle diameter of the metal powder corresponding to the cumulative weight of 50% in the cumulative weight distribution of the metal powder
3) The particle diameter of the metal powder corresponding to the cumulative weight of 10% in the cumulative weight distribution of the metal powder
4) The particle diameter of the metal powder corresponding to the cumulative weight of 90% in the cumulative weight distribution of the metal powder

Specifically, as can be seen from Tables 1 and 2,

In Examples 1 to 3, in which the silicone resin content in the conductive silicone-forming composition was 19 to 23 parts by weight (metal powder content: 81 to 84 wt%), adhesion, surface resistance, easy cutting property, It can be confirmed that all physical properties at the same time are remarkably excellent,

In the case of the unsatisfactory Example 4, as the content of the silicone resin was somewhat increased as compared with Example 1, the adhesive strength was improved but the surface resistance was remarkably increased.

In addition, in Example 6, which is unsatisfactory, the surface resistance was lowered as the content of the silicone resin was lower than that in Example 3, and the electrical properties were improved, but the bonding strength was remarkably lowered.

Further, in Examples 9 and 10 which satisfied the more preferable thickness range of the first metal layer and the second metal layer, 30 to 50 占 퐉, excellent physical properties such as excellent adhesive strength and surface resistance, easy cutting ability, good shape quality and soldering stability .

However, in Examples 7 and 8 in which the thicknesses of the first metal layer and the second metal layer are thin, the electrical characteristics of the surface resistance are somewhat better and it is easy to cut. However, it is confirmed that the defects in the cut shape and the soldering stability are significantly increased. In addition, in Example 11 in which the thickness of the metal layer was thick, the electrical resistance was remarkably increased, and it was confirmed that the ease of cutting, the goodness of cut shape, and the soldering stability were significantly lowered than in Example 10.

In Examples 1 and 12 in which the metal powder corresponding to the cumulative weight of 50% in the cumulative weight distribution of the metal powders satisfies the range of 32 to 41 탆, the electrical characteristics of Example 1 are higher than those of Example 12 It was confirmed that the electrical properties were not good due to the increase of the surface resistance in Example 13. In Example 14, it was confirmed that the metal powder had the pinholes And the increase of the surface bending, the electrical characteristics, the adhesive strength, and the soldering stability are all reduced.

In addition, in Examples 1 and 15 which satisfy Formula (1), which is a preferred embodiment according to the present invention, it can be confirmed that both the electrical characteristics and the adhesive strength are better than those of Example 16, which is not. In addition, it can be confirmed that the physical properties of Example 16 are poorer than those of Examples 1 and 15 in terms of soldering stability.

On the other hand, in Example 17 according to the second embodiment of the present invention, it was confirmed that the adhesive strength, soldering stability, ease of cutting, and shape of the cut surface were excellent, and in particular, the electrical characteristics were improved.

On the other hand, the electrical contact terminal according to Comparative Example 1 using an epoxy resin instead of the silicone resin as the adhesive component remarkably lowered the bonding strength, and the cutability was also decreased, and the cut shape was also confirmed to be lowered.

While the present invention has been particularly shown and described with reference to exemplary embodiments thereof, it is to be understood that the invention is not limited to the disclosed exemplary embodiments, It will be understood by those skilled in the art that various changes in form and details may be made therein without departing from the spirit and scope of the invention as defined by the appended claims.

1100: electrical contact terminal 10, 110: first metal layer
30: second metal layer 50, 150: conductive silicon

Claims (15)

A sheet-like first metal layer;
A second metal layer disposed parallel to and spaced apart from the first metal layer; And
And a conductive silicon layer formed on the first metal layer and the second metal layer, the solid silicon layer being bonded to the first metal layer and the second metal layer by a hot press and adhered to the respective metal layers. The cumulative weight distribution of the metal powder, And the metal powder corresponding to 50% has a particle diameter of 32 to 41 탆. The method according to claim 1,
Wherein the first metal layer and the second metal layer have the same width and the reflow soldering is performed in the first metal layer or the second metal layer. The method according to claim 1,
And the thickness of the conductive silicon is 0.1 to 3.0 mm. The method according to claim 1,
Wherein the metal powder includes at least one of silver, nickel, copper, and nickel. The method according to claim 1,
And 19 to 23 parts by weight of silicon relative to 100 parts by weight of the metal powder. delete The method according to claim 1,
Wherein the value of the cumulative weight distribution for each particle size of the metal powder according to Equation (1) is 1.8 or less.
[Equation 1]
Figure 112016068663673-pat00004
 The method according to claim 1,
Wherein the electric resistance of the conductive silicon is in the range of 10 to 200 m ?. The method according to claim 1,
Wherein the thickness of the first metal layer and the second metal layer is 30 占 퐉 to 100 占 퐉. Stacking a first metal layer on a mold formed inside the mold, and stacking solid conductive silicon including silicon and metal powder on the first metal layer;
Laminating a second metal layer on the solid conductive silicon top surface; And
And bonding the first metal layer and the second metal layer to the solid conductive silicon by pressing the metal mold with a hot press,
Wherein a metal powder corresponding to a cumulative weight of 50% in the cumulative weight distribution of the metal powders is 32 to 41 占 퐉. 11. The method of claim 10,
Wherein the compression with the hot press is performed at a temperature of 160 to 180 DEG C and a pressure of 1900 to 2100 psi for 2 to 10 minutes. 11. The method of claim 10,
Further comprising the step of cutting the laminate having the conductive silicone interposed between the first metal layer and the second metal layer to a standardized size. A sheet-like third metal layer; And
A solid conductive silicon containing silicon and metal powder, pressed by a hot press and bonded to one surface of the third metal layer; / RTI &gt;
Wherein the metal powder corresponding to the cumulative weight of 50% in the cumulative weight distribution of the metal powder has a particle diameter of 32 to 41 탆. Stacking a third metal layer on a mold formed inside the mold, and stacking solid conductive silicon including silicon and metal powder on the third metal layer; And
And pressing the metal mold with a hot press to bond the solid conductive silicon and the third metal layer,
Wherein a metal powder corresponding to a cumulative weight of 50% in the cumulative weight distribution of the metal powders is 32 to 41 占 퐉. A printed wiring board; And
And an electrical contact terminal according to claim 1 or 13, which is fixed by being soldered to the printed wiring board.
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Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20100124148A (en) * 2009-05-18 2010-11-26 두성산업 주식회사 Conductive contactor for substrate surface mount
KR20110081363A (en) * 2010-01-05 2011-07-14 이찬우 Conductive connector having an excellent elasticity and manufacturing method the same
KR101295822B1 (en) * 2013-04-17 2013-08-12 주식회사 이엔씨테크 Method of manufacturing smt type electrical contacts

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20100124148A (en) * 2009-05-18 2010-11-26 두성산업 주식회사 Conductive contactor for substrate surface mount
KR20110081363A (en) * 2010-01-05 2011-07-14 이찬우 Conductive connector having an excellent elasticity and manufacturing method the same
KR101295822B1 (en) * 2013-04-17 2013-08-12 주식회사 이엔씨테크 Method of manufacturing smt type electrical contacts

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