KR101659259B1 - In Plane Switching mode Liquid Crystal Display Device and Method for manufacturing the same - Google Patents

Abstract

The present invention provides a liquid crystal display comprising: a gate line, a common line and a data line arranged on a substrate; A thin film transistor formed in a region where the gate line and the data line cross each other; A pixel electrode electrically connected to the thin film transistor; And a common electrode electrically connected to the common line and arranged in parallel with the pixel electrode, wherein the pixel electrode includes a first pixel electrode having a horizontal structure and a second pixel electrode having an inclined structure, Wherein the common electrode includes a first common electrode of a horizontal structure and a second common electrode of a tilted structure, and a method of manufacturing the same,

According to the present invention, since the widths of the second pixel electrode and the second common electrode can be minimized, the area of the liquid crystal layer that is not driven can be minimized, and the light transmittance is improved compared to the related art.

Transverse electric field, light transmittance, inclined structure

Description

BACKGROUND OF THE INVENTION 1. Field of the Invention [0001] The present invention relates to a transverse electric field type liquid crystal display device and a manufacturing method thereof,

BACKGROUND OF THE INVENTION 1. Field of the Invention [0001] The present invention relates to a liquid crystal display device, and more particularly to a transverse electric field liquid crystal display device.

Liquid crystal display devices have a wide variety of applications ranging from notebook computers, monitors, spacecrafts and aircraft to the advantages of low power consumption and low power consumption and being portable.

The liquid crystal display device includes a lower substrate, an upper substrate, and a liquid crystal layer formed between the two substrates. The arrangement of the liquid crystal layers is adjusted according to whether an electric field is applied or not, .

Such a liquid crystal display device has been developed in various ways such as a TN (Twisted Nematic) mode, an IPS (In Plane Switching) mode and a VA (Vertical Alignment) mode according to a method of adjusting the arrangement of liquid crystal layers.

In the IPS mode, the alignment of the liquid crystal layer is adjusted through the electric field in the horizontal direction by arranging the electrodes forming the electric field in parallel on the same substrate. The IPS mode liquid crystal display device is referred to as a transverse electric field liquid crystal display Quot;

Hereinafter, a conventional transverse electric field type liquid crystal display device will be described with reference to the drawings.

1 and 2 are schematic cross-sectional views of a conventional transverse electric field type liquid crystal display device. FIG. 1 shows a state in which no electric field is applied, and FIG. 2 shows a state in which an electric field is applied. 1 and 2 show only the minimum configuration related to the principle of operation of displaying an image through a horizontal electric field.

1 and 2, a conventional transverse electric field type liquid crystal display device includes a lower substrate 10, an upper substrate 20, and a liquid crystal layer 30 formed between both substrates 10 and 20 .

On one surface of the lower substrate 10, a common electrode 12 and a pixel electrode 14 are arranged parallel to each other at a predetermined interval in order to form an electric field in a horizontal direction.

A lower polarizer 16 and an upper polarizer 26 are formed on the other surface of the lower substrate 10 and the other surface of the upper substrate 20, respectively. The lower polarizer plate 16 and the upper polarizer plate 26 are formed such that their optical axes are perpendicular to each other.

The principle of operation of such a transverse electric field type liquid crystal display device will be described below.

1, when the electric field is not applied between the common electrode 12 and the pixel electrode 14, the liquid crystal layer 30 maintains the initial alignment state. At this time, the light incident from below passes through the lower polarizer plate 16, passes through the liquid crystal layer 30, is not rotated in the polarization direction, and accordingly, the optical axis of the lower polarizer plate 16 The upper polarizer 26 can not transmit. Thus, the image becomes black.

2, when an electric field is applied between the common electrode 12 and the pixel electrode 14, the liquid crystal layer 30 forms an electric field between the common electrode 12 and the pixel electrode 14 Direction. At this time, light incident from below passes through the lower polarizer plate 16 and then passes through the liquid crystal layer 30 and is rotated in the polarization direction. Accordingly, the upper polarizer plate 16, which is orthogonal to the optical axis of the lower polarizer plate 16, (26). Thus, the image is in the white state.

However, such a conventional transverse electric field type liquid crystal display device has the following problems.

In a conventional transverse electric field type liquid crystal display device, an electric field formed between the common electrode 12 and the pixel electrode 14 is generally in the form of a parabola.

2, an electric field close to the horizontal direction can be formed in the region between the common electrode 12 and the pixel electrode 14, and the liquid crystal layer 30 in the region is driven to rotate in the horizontal direction An electric field in the horizontal direction is not formed in the region above the common electrode 12 and the pixel electrode 14 so that the liquid crystal layer 30 in the region can not rotate in the horizontal direction and maintains the initial alignment state.

As described above, in the conventional transverse electric field type liquid crystal display device, when the electric field is applied, the liquid crystal layer 30 in the region above the common electrode 12 and the pixel electrode 14 can not be rotated in the horizontal direction, Therefore, there is a problem that light transmittance is reduced in the region.

In particular, since the common electrode 12 and the pixel electrode 14, which are applied to the conventional transverse electric field liquid crystal display device, have a planar structure, there is a limit in reducing the width of the electrode, There is a significant portion of the liquid crystal layer which is not driven and maintains the initial arrangement state, and thus there is a limit to increase the light transmittance.

SUMMARY OF THE INVENTION It is an object of the present invention to provide a liquid crystal display device capable of minimizing a liquid crystal layer that can not be driven in a horizontal direction when an electric field is applied between a pixel electrode and a common electrode, And an object of the present invention is to provide an electric field type liquid crystal display device and a manufacturing method thereof.

In order to accomplish the above object, the present invention provides a semiconductor device comprising: gate lines, a common line and a data line arranged on a substrate; A thin film transistor formed in a region where the gate line and the data line cross each other; A pixel electrode electrically connected to the thin film transistor; And a common electrode electrically connected to the common line and arranged in parallel with the pixel electrode, wherein the pixel electrode includes a first pixel electrode having a horizontal structure and a second pixel electrode having an inclined structure, And the common electrode includes a first common electrode having a horizontal structure and a second common electrode having a tilted structure.

The present invention also provides a method of manufacturing a semiconductor device, comprising the steps of sequentially laminating an insulating layer and a first electrode layer on a substrate; Forming a barrier layer of a predetermined pattern on the first electrode layer; The first electrode layer and the insulating layer are sequentially etched using the barrier layer of the predetermined pattern as a mask to form an insulating layer having inclined lateral sides, Forming a pixel electrode and a first common electrode; And a second common electrode extending to both sides of the first pixel electrode along a side surface of the inclined insulating layer and extending to the upper surface of the substrate, wherein a side surface of the inclined insulating layer is formed on both sides of the first common electrode And forming a second pixel electrode extending to the upper surface of the substrate. [5] The method of manufacturing a transverse electric field type liquid crystal display device according to claim 1,

Forming a gate line and a common line on the substrate and forming a gate insulating film on the entire surface of the substrate; Forming a semiconductor layer on the gate insulating layer, forming a source electrode and a drain electrode on the semiconductor layer, and forming a data line connected to the source electrode; Forming a protective film on the entire surface of the substrate; Forming a pixel electrode and a common electrode in a region partitioned by the gate line, the common line, and the data line; Forming a first contact hole to expose the drain electrode and a second contact hole to expose the common line; A first connection electrode connected to the drain electrode through the first contact hole and directly connected to the pixel electrode, and a second connection electrode connected to the common line via the second contact hole, Forming a second common electrode having a structure inclined to both sides of the first pixel electrode having a horizontal structure; and forming a second common electrode having a horizontal And forming a second pixel electrode having a tilted structure on both sides of the first common electrode in the structure of the liquid crystal display device.

According to the present invention as described above, the following effects can be obtained.

According to the present invention, an electric field is formed between the first pixel electrode of the horizontal structure and the second common electrode of the inclined structure, and an electric field is formed between the first common electrode of the horizontal structure and the second pixel electrode of the inclined structure Further, since an electric field is formed also between the second pixel electrode having the tilted structure and the second common electrode having the tilted structure, the area of the liquid crystal layer that can be driven can be increased and the light transmittance can be improved .

In particular, according to the present invention, since the widths of the second pixel electrode and the second common electrode can be minimized, the area of the liquid crystal layer that is not driven can be minimized, thereby improving the light transmittance .

Hereinafter, preferred embodiments of the present invention will be described in detail with reference to the drawings.

Transverse electric field  Type liquid crystal display

3 is a schematic plan view of a lower substrate for a transverse electric field type liquid crystal display according to an embodiment of the present invention.

3, the lower substrate for a transverse electric field type liquid crystal display according to an exemplary embodiment of the present invention includes a substrate 100, a gate line 110, a common line 115, a data line 140, And includes a transistor T, pixel electrodes 160a and 160b, common electrodes 170a and 170b, a first connection electrode 180 and a second connection electrode 190. [

The gate lines 110 and the common lines 115 are arranged in a first direction, for example, in a horizontal direction, and the data lines 140 are arranged in a second direction, for example, a vertical direction.

The thin film transistor T is formed in a region where the gate line 110 and the data line 140 cross each other. The thin film transistor T includes a gate electrode 112, a semiconductor layer 130, a source electrode 142, and a drain electrode 144.

The gate electrode 112 is branched at the gate line 110 and the source electrode 142 is branched at the data line 140. The drain electrode 144 is connected to the source electrode 142, And are spaced apart from each other by a predetermined distance. The semiconductor layer 130 is formed in an intermediate layer between the gate electrode 112 and the source / drain electrodes 142 and 144 to serve as a channel through which electrons move.

The pixel electrodes 160a and 160b and the common electrodes 170a and 170b are arranged in parallel to each other in the pixel region defined by the gate line 110, the common line 115, and the data line 140, Respectively.

The pixel electrodes 160a and 160b include a first pixel electrode 160a having a horizontal structure and a second pixel electrode 160b having an inclined structure and the common electrodes 170a and 170b are also formed of a 1 common electrode 170a and an inclined second common electrode 170b. For reference, the width of a horizontal electrode is shown thick and the width of a tilted electrode is shown thin.

At this time, one electrode of the horizontal structure and two electrodes of the tilted structure are formed to be one set. That is, one of the first pixel electrode 160a having a horizontal structure and the second common electrode 170b having an inclined structure is one set, and one of the first common electrode 170a having a horizontal structure and one Two sets of the second pixel electrodes 160b constitute one set. The specific configuration of the pixel electrodes 160a and 160b and the common electrodes 170a and 170b may be easily understood by referring to the cross-sectional views and manufacturing processes to be described later.

The pixel electrodes 160a and 160b and the common electrodes 170a and 170b may be arranged in parallel with the gate line 110 and the common line 115 as shown in the drawing.

The first connection electrode 180 electrically connects the thin film transistor T and the pixel electrodes 160a and 160b. The first connection electrode 180 is connected to the drain electrode 144 of the thin film transistor T through the first contact hole 151 and the first connection electrode 180 is connected to the drain electrode 144 of the plurality And are directly connected to the pixel electrodes 160a and 160b. Accordingly, the plurality of pixel electrodes 160a and 160b receive the data signal from the thin film transistor T through the first connection electrode 180. [

The second connection electrode 190 electrically connects the common line 115 and the common electrodes 170a and 170b. More specifically, the second connection electrode 190 is connected to the common line 115 through the second contact hole 152, and the second connection electrode 190 is connected to the common electrodes 170a and 170b ). ≪ / RTI > Accordingly, the plurality of common electrodes 170a and 170b receive the common voltage signal from the common line 115 through the second connection electrode 190. [

Hereinafter, a structure of a lower substrate for a liquid crystal display of a transverse electric field type according to an embodiment of the present invention will be described in detail with reference to a sectional structure.

4A to 4D are sectional views of a lower substrate for a liquid crystal display of a transverse electric field system according to an embodiment of the present invention.

FIG. 4A is a cross-sectional view taken along line A-A of FIG. 3, and shows a specific configuration of the pixel electrodes 160a and 160b and the common electrodes 170a and 170b formed in the pixel region.

4A, a gate insulating layer 120 and a passivation layer 150 are sequentially formed on the substrate 100. As shown in FIG. The gate insulating layer 120 and the passivation layer 150 are not formed on the entire surface of the substrate 100. The gate insulating layer 120 and the passivation layer 150 are sequentially formed on the substrate 100, And there are regions where both are not formed.

Pixel electrodes 160a and 160b and common electrodes 170a and 170b are formed in a region where the gate insulating layer 120 and the passivation layer 150 are formed.

Specifically, a first pixel electrode 160a is formed on the passivation layer 150, and a second common electrode 170b is formed on both sides of the first pixel electrode 160a. The first pixel electrode 160a is formed on the passivation layer 150 in a horizontal structure and the second common electrode 170b is formed on the substrate 100 along the side surfaces of the passivation layer 150 and the gate insulating layer 120. [ And is formed to have an inclined structure.

A first common electrode 170a is formed on the passivation layer 150 and a second pixel electrode 160b is formed on both sides of the first common electrode 170a. The first common electrode 170a is formed in a horizontal structure on the passivation layer 150 and the second pixel electrode 160b is formed on the side of the passivation layer 150 and the gate insulating layer 120, And is formed to have an inclined structure.

As described above, two second common electrodes 170b having a structure inclined with respect to the first pixel electrode 160a having a horizontal structure are formed on both sides, and one of the first common electrodes 170a having a horizontal structure Two second pixel electrodes 160b having a structure inclined with respect to the center are formed on both sides.

The inclined second pixel electrode 160b and the inclined second common electrode 170b face each other and the second pixel electrode 160b and the second common electrode 170b face each other. The gate insulating film 120 and the protective film 150 are not formed.

The effect obtained by applying the first pixel electrode 160a and the first common electrode 170a having a horizontal structure as described above and the second pixel electrode 160b and the second common electrode 170b having an inclined structure is as follows. same.

According to the present invention, an electric field is formed between the first pixel electrode 160a having a horizontal structure and the second common electrode 170b having an inclined structure, and the first common electrode 170a having a horizontal structure and the first common electrode 170b having a tilted structure Since the electric field is formed between the second pixel electrode 160b having the tilted structure and the second common electrode 170b having the tilted structure, an electric field is formed between the two pixel electrodes 160b, The area of the liquid crystal layer can be increased and the light transmittance can be improved as compared with the related art.

In particular, according to the present invention, since the widths of the second pixel electrode 160b and the second common electrode 170b having an inclined structure can be minimized, the area of the liquid crystal layer that is not driven can be minimized, The permeability is improved.

FIG. 4B is a cross-sectional view taken along the line B-B of FIG. 3, which shows the configuration of the thin film transistor T and the electrical connection between the thin film transistor T and the first connection electrode 180.

4B, a gate electrode 112 is formed on the substrate 100, and a gate insulating film 120 is formed on the gate electrode 112. As shown in FIG.

A semiconductor layer 130 is formed on the gate insulating layer 120 and a source electrode 142 and a drain electrode 144 are formed on the semiconductor layer 130 at predetermined intervals. The semiconductor layer 130 includes an active layer 130a formed on the gate insulating layer 120 and serving as a channel through which electrons move and an ohmic contact layer 130b formed on the active layer 130a, And a contact layer 130b. The ohmic contact layer 130b is in contact with the source electrode 142 and the drain electrode 144.

A protective layer 150 is formed on the source / drain electrodes 142 and 144. A first contact hole 151 is formed in the passivation layer 150 to expose the drain electrode 144 through the first contact hole 151.

A first connection electrode 180 is formed on the passivation layer 150 and the first connection electrode 180 is connected to the drain electrode 144 through the first contact hole 151.

FIG. 4C is a cross-sectional view taken along the line C-C of FIG. 3, illustrating the electrical connection between the first connection electrode 180 and the first pixel electrode 160a.

4C, on the substrate 100, a gate insulating layer 120 and a passivation layer 150 are sequentially formed. As described above, on the substrate 100, there are regions where the gate insulating film 120 and the protective film 150 are sequentially formed, and regions where both are not formed.

The first pixel electrode 160a is formed on the passivation layer 150 on the gate insulating layer 120. [

The first connection electrode 180 is formed over both the region where the gate insulating layer 120 and the protection layer 150 are sequentially formed and the region where both are not formed. More specifically, one end of the first connection electrode 180 is directly connected to the first pixel electrode 160a. More specifically, one end of the first connection electrode 180 is connected to the first pixel electrode 160a And is extended by a predetermined length. That is, one end of the first connection electrode 180 and the first pixel electrode 160a overlap each other.

Although not shown in detail, the first connection electrode 180 may be connected to the second pixel electrode 160b similarly to the first connection electrode 180 connected to the first pixel electrode 160a, (See Fig. 3).

FIG. 4D is a cross-sectional view of the DD line of FIG. 3, illustrating the electrical connection between the second connection electrode 190 and the first common electrode 170a and the electrical connection between the second connection electrode 190 and the common line 115. FIG. Fig.

4D, a common line 115 is formed on the substrate 100, and a gate insulating layer 120 and a passivation layer 150 are sequentially formed on the common line 115. As shown in FIG. A second contact hole 152 is formed in a predetermined region of the gate insulating layer 120 and the passivation layer 150 to expose the common line 115 by the second contact hole 152.

4C, on the substrate 100, there are regions where the gate insulating layer 120 and the protective layer 150 are sequentially formed, and regions where both are not formed.

The second connection electrode 190 is formed over both the region where the gate insulation layer 120 and the protection layer 150 are formed in order and the region where both are not formed. And is connected to the common line 115 through a second contact hole 152.

The second connection electrode 190 and the first common electrode 170a are also directly connected to each other in a similar manner to the connection between the first connection electrode 180 and the first pixel electrode 160a. That is, a first common electrode 170a is formed on the protective layer 150 on the gate insulating layer 120, and one end of the second connection electrode 190 is formed on the first common electrode 170a by a predetermined length So that one end of the second connection electrode 10 and the first common electrode 170a overlap with each other.

Meanwhile, although not shown in detail, the second connection electrode 190 is also directly connected to the second common electrode 170b (see FIG. 3).

Each of the structures described above can be formed using various materials known in the art. Hereinafter, examples of the materials of the respective structures will be described, but the present invention is not limited thereto.

The gate line 110, the common line 115, the data line 140, the gate electrode 112, the source electrode 142, and the drain electrode 144 may be formed of a metal such as molybdenum (Mo), aluminum (Al), chromium (Cr), gold (Au), titanium (Ti), nickel (Ni), neodymium (Nd), copper And may be composed of two or more layers.

The gate insulating layer 120 and the passivation layer 150 may be formed of an inorganic material such as a silicon oxide film (SiO x) or a silicon nitride film (SiN x), or an organic material such as benzocyclobutene (BCB) and photo acryl .

The semiconductor layer 130 may include a silicon-based material such as amorphous silicon or crystalline silicon. Particularly, the ohmic contact layer 130b constituting the semiconductor layer 130 may be formed by doping impurities into the silicon- .

The pixel electrodes 160a and 160b, the common electrodes 170a and 170b, the first connection electrode 180 and the second connection electrode 190 may be formed of indium tin oxide (ITO), indium zinc oxide (IZO) , ZnO (Zinc Oxide), and the like.

The above description has been made with respect to the lower substrate for the transverse electric field type liquid crystal display device according to the embodiment of the present invention. The upper substrate is formed on the lower substrate, and the liquid crystal layer is formed between the lower substrate and the upper substrate.

(R), green (G), and blue (B) light-emitting layers are formed between the light-shielding layers to prevent leakage of light to regions other than the pixel region, And an overcoat layer for substrate planarization is formed on the color filter layer. Such an upper substrate may be formed by various materials known in the art in various forms.

Transverse electric field  Method for manufacturing liquid crystal display device

5A to 5D are plan views schematically illustrating a process of manufacturing a lower substrate for a transverse electric field type liquid crystal display according to an embodiment of the present invention.

5A, a gate line 110 and a gate line 112 branched from the gate line 110, and a common line 115 are formed on a substrate 100, A gate insulating film 120 is formed on the entire surface of the substrate.

The gate line 110, the gate electrode 112, and the common line 115 are formed by depositing a predetermined metal material through a sputtering process, and then performing a so-called " A pattern can be formed through a photolithography process.

The gate insulating layer 120 may be deposited by a Plasma Enhanced Chemical Vapor Deposition (PECVD) process.

5B, a semiconductor layer 130 is formed on the gate insulating layer 120, a source electrode 142 and a drain electrode 144 are formed on the semiconductor layer 130, A data line 140 connected to the source electrode 142 is formed, and then a passivation layer 150 is formed on the entire surface of the substrate.

The source electrode 142, the drain electrode 144, and the data line 140 may be patterned through a sputtering process and a photolithography process. The source electrode 142, the drain electrode 144, and the data line 140 may be patterned through a PECVD process and a photolithography process. And the protective layer 150 may be deposited by a PECVD process.

Next, as shown in FIG. 5C, the pixel electrodes 160a and 160b and the common electrodes 170a and 170b are formed in the pixel region defined by the gate line 110, the common line 115, and the data line 140, A first contact hole 151 is formed to expose the drain electrode 144 and a second contact hole 152 is formed so that the common line 115 is exposed.

A specific process of forming the pixel electrodes 160a and 160b and the common electrodes 170a and 170b will be described later with reference to FIGS. 6A to 6F.

5D, a first connection electrode 180 is formed and a second connection electrode 190 is formed to manufacture a lower substrate for a transverse electric field type liquid crystal display according to an exemplary embodiment of the present invention. The process is completed.

The first connection electrode 180 is connected to the drain electrode 144 through the first contact hole 151 and directly connected to the pixel electrodes 160a and 160b.

The second connection electrode 190 is connected to the common line 115 through the second contact hole 152 and directly connected to the common electrodes 170a and 170b.

The first connection electrode 180 and the second connection electrode 190 may be formed by laminating a transparent conductive layer through a sputtering or MOCVD (Metal Organic Chemical Vapor Deposition) process and then patterning through a photolithography process .

6A to 6F are cross-sectional views illustrating a process of forming a pixel electrode and a common electrode in a pixel region according to an embodiment of the present invention.

6A, a gate insulating layer 120 and a passivation layer 150 are sequentially stacked on a substrate 100, a first electrode layer 200 is stacked on the passivation layer 150, A barrier layer 210 having a predetermined pattern is formed on the first electrode layer 200.

The first electrode layer 200 may be laminated through a sputtering process, and the barrier layer 210 of the predetermined pattern may be patterned through a sputtering process and a photolithography process.

6B, the first electrode layer 200, the passivation layer 150, and the gate insulating layer 120 are sequentially etched using the barrier layer 210 of the predetermined pattern as a mask.

The first electrode layer 200 may be etched using a wet etching process and the first electrode layer 200 may be patterned by the etching process to form the first pixel electrode 160a and the first common electrode 170a, .

The passivation layer 150 and the gate insulating layer 120 may be etched using a dry etching process so that both sides of the passivation layer 150 and the gate insulating layer 120 are inclined do.

If the first electrode layer 200, the protective layer 150 and the gate insulating layer 120 are sequentially etched using the barrier layer 210 of the predetermined pattern as a mask as shown in the figure, An undercut region A is formed under both side edges of the first electrode layer 210. In particular, by appropriately controlling the etching process of the first electrode layer 200, an excessive undercut region can be formed in the layer.

Next, as shown in FIG. 6C, the second electrode layer 230 is laminated on the entire surface of the substrate. The second electrode layer 230 may be deposited through a sputtering process. At this time, the second electrode layer 230 is formed to penetrate the undercut region.

That is, the second electrode layer 230 is stacked on the upper surface of the barrier layer 210 and the upper surface of the substrate 100. In addition, the second electrode layer 230 penetrates the undercut region A to form the inclined gate insulating layer 120 and the passivation layer 150, As shown in Fig. However, the deposition process must be controlled so that the second electrode layer 230 does not contact the first pixel electrode 160a and the first common electrode 170a.

Next, as shown in FIG. 6D, a photoresist pattern 240 is formed in the undercut region.

The photoresist pattern 240 may be formed by depositing a photoresist layer on the entire surface of the substrate and then developing the photoresist pattern. That is, when the developing process is performed, only the photoresist layer in the undercut region remains and the photoresist layer in the remaining region is removed to form the photoresist pattern 240 as shown in FIG.

Next, as shown in FIG. 6E, the second electrode layer 230 and the barrier layer 210 under the second electrode layer 230 are etched.

When the second electrode layer 230 and the barrier layer 210 are etched as described above, the barrier layer 210 and the second electrode layer 230 formed on the first pixel electrode 160a and the first common electrode 170a, And the remaining second electrode layer 230 except for the second electrode layer 230 covered with the photoresist pattern 240 is removed.

Therefore, as shown in the drawing, a second common electrode 170b having an inclined structure is formed on both sides of the first pixel electrode 160a, and a second common electrode 170b having an inclined structure on both sides of the first common electrode 170a, (160b) is formed. As a result, the second electrode layer 230 is patterned by an etching process to form the second pixel electrode 160b and the second common electrode 170b.

6F, the photoresist pattern 240 is removed to complete the formation of the pixel electrodes 160a and 160b and the common electrodes 170a and 170b according to an embodiment of the present invention.

As a result, the first pixel electrode 160a having a horizontal structure formed on the passivation layer 150 is tilted to the upper surface of the substrate 100 along the side surfaces of the passivation layer 150 and the gate insulating layer 120, Two second common electrodes 170b are formed on both sides.

A first common electrode 170a having a horizontal structure formed on the protective film 150 is formed on the protective film 150 and the gate insulating film 120 along a side surface of the substrate 100 to form a tilted structure Two second pixel electrodes 160b are formed on both sides.

As described above, the manufacturing process of the lower substrate for the transverse electric field type liquid crystal display device according to the embodiment of the present invention has been described. However, the transverse electric field type liquid crystal display device according to the embodiment of the present invention, Forming a light shielding layer, a color filter layer, and an overcoat layer in this order to form an upper substrate, and forming a liquid crystal layer between the lower substrate and the upper substrate.

The process of forming the liquid crystal layer between the lower substrate and the upper substrate may be performed using a liquid crystal injection method or a liquid drop method.

In the liquid crystal injection method, a sealant having a predetermined injection port is coated on a substrate of either a lower substrate or an upper substrate, the lower substrate and the upper substrate are bonded together, the liquid crystal is injected through the sealant inlet, And a liquid crystal layer is formed between the lower substrate and the upper substrate through a process of sealing the sealant inlet.

In the liquid dropping method, a closed type sealing material having no injection port is coated on one of a lower substrate and an upper substrate, liquid crystal is dropped onto a substrate of either a lower substrate or an upper substrate, And a liquid crystal layer is formed between the lower substrate and the upper substrate through a process of attaching the upper substrate and the upper substrate.

1 and 2 are schematic cross-sectional views of a conventional transverse electric field type liquid crystal display device. FIG. 1 shows a state in which no electric field is applied, and FIG. 2 shows a state in which an electric field is applied.

3 is a schematic plan view of a lower substrate for a transverse electric field type liquid crystal display according to an embodiment of the present invention.

FIG. 4A is a cross-sectional view taken along line A-A of FIG. 3, FIG. 4B is a cross-sectional view taken along line B-B of FIG. 3, FIG. 4C is a cross-sectional view taken along line C-C of FIG. 3 and FIG.

5A to 5D are plan views schematically illustrating a process of manufacturing a lower substrate for a transverse electric field type liquid crystal display according to an embodiment of the present invention.

6A to 6F are cross-sectional views illustrating a process of forming a pixel electrode and a common electrode in a pixel region according to an embodiment of the present invention.

DESCRIPTION OF THE REFERENCE SYMBOLS

110: gate line 115: common line

140: Data line 160a: First pixel electrode

160b: second pixel electrode 170a: first common electrode

170b: second common electrode 180: first connection electrode

190: second connecting electrode

Claims (10)

A gate line, a common line, and a data line arranged on a substrate; A thin film transistor arranged in a region where the gate line and the data line cross each other; A pixel electrode electrically connected to the thin film transistor; And And a common electrode electrically connected to the common line and arranged in parallel with the pixel electrode, Wherein the pixel electrode includes a first pixel electrode having a horizontal structure and a second pixel electrode having an inclined structure, Wherein the common electrode includes a first common electrode of a horizontal structure and a second common electrode of a tilted structure, Wherein the second common electrode is disposed on both sides of the first pixel electrode, the second pixel electrode is disposed on both sides of the first common electrode, and the second common electrode and the second pixel electrode are opposed to each other Lt; / RTI > Wherein a gate insulating film and a protective film are disposed under the first pixel electrode and the second common electrode extends to a top surface of the substrate along a side surface of the gate insulating film and the protective film, Wherein a gate insulating layer and a protective layer are formed under the first common electrode and the second pixel electrode extends to a top surface of the substrate along a side surface of the gate insulating layer and the passivation layer. delete delete The method according to claim 1, Wherein a gate insulating film and a protective film are not disposed between the second common electrode and the second pixel electrode formed to face each other. The method according to claim 1, A first connection electrode electrically connecting the pixel electrode and the thin film transistor, and a second connection electrode electrically connecting the common electrode and the common line, The first connection electrode is connected to the thin film transistor through a first contact hole and directly connected to the pixel electrode, Wherein the second connection electrode is connected to the common line through a second contact hole and is directly connected to the common electrode. A step of sequentially laminating an insulating layer and a first electrode layer on a substrate; Forming a barrier layer of a predetermined pattern on the first electrode layer; The first electrode layer and the insulating layer are sequentially etched using the barrier layer of the predetermined pattern as a mask to form an insulating layer having inclined lateral sides, Forming a pixel electrode and a first common electrode; And A second common electrode extending to both sides of the first pixel electrode along a side surface of the inclined insulating layer and extending to the upper surface of the substrate, and a second common electrode extending along both sides of the first common electrode, And forming a second pixel electrode extending to an upper surface of the substrate. The method according to claim 6, The step of forming the second common electrode and the step of forming the second pixel electrode, Laminating a second electrode layer on the entire surface of the substrate including both sides of the inclined insulating layer; Forming a photoresist pattern on the second electrode layer stacked on both sides of the inclined insulating layer; Removing the second electrode layer and the barrier layer other than the second electrode layer covered by the photoresist pattern; And And removing the photoresist pattern. The method of manufacturing a transverse electric field type liquid crystal display device according to claim 1, The method according to claim 6, Wherein the step of laminating the insulating layer on the substrate includes a step of sequentially laminating a gate insulating film and a protective film on the substrate. Forming a gate line and a common line on the substrate, and forming a gate insulating film on the entire surface of the substrate; Forming a semiconductor layer on the gate insulating layer, forming a source electrode and a drain electrode on the semiconductor layer, and forming a data line connected to the source electrode; Forming a protective film on the entire surface of the substrate; Forming a pixel electrode and a common electrode in a region partitioned by the gate line, the common line, and the data line; Forming a first contact hole to expose the drain electrode and a second contact hole to expose the common line; And A first connection electrode connected to the drain electrode through the first contact hole and directly connected to the pixel electrode, and a second connection electrode connected to the common line through the second contact hole, And forming a connection electrode, The step of forming the pixel electrode and the common electrode may include forming a second common electrode having a structure inclined to both sides of the first pixel electrode having a horizontal structure and forming a second common electrode having a structure inclined to both sides of the first common electrode having a horizontal structure Wherein the first pixel electrode and the first common electrode are formed on the passivation layer. 2. The method of claim 1, wherein the first pixel electrode and the first common electrode are formed on the passivation layer. 10. The method of claim 9, Wherein the step of forming the pixel electrode and the common electrode comprises: Laminating a first electrode layer on the protective film; Forming a barrier layer of a predetermined pattern on the first electrode layer; The first electrode layer, the protective film, and the gate insulating film are sequentially etched using the barrier layer of the predetermined pattern as a mask to form a gate insulating film and a protective film having inclined lateral sides, and the gate insulating film And forming a first pixel electrode and a first common electrode on the protective film, respectively; And A second common electrode extending to both sides of the first pixel electrode along the side surfaces of the tilted gate insulating film and the protective film and extending to the upper surface of the substrate, And forming a second pixel electrode extending along the side surface to the upper surface of the substrate.

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