KR101659169B1 - 전하 펌프 초기화 디바이스, 전하 펌프 초기화 디바이스를 갖는 집적 회로, 및 동작 방법 - Google Patents
전하 펌프 초기화 디바이스, 전하 펌프 초기화 디바이스를 갖는 집적 회로, 및 동작 방법 Download PDFInfo
- Publication number
- KR101659169B1 KR101659169B1 KR1020140148921A KR20140148921A KR101659169B1 KR 101659169 B1 KR101659169 B1 KR 101659169B1 KR 1020140148921 A KR1020140148921 A KR 1020140148921A KR 20140148921 A KR20140148921 A KR 20140148921A KR 101659169 B1 KR101659169 B1 KR 101659169B1
- Authority
- KR
- South Korea
- Prior art keywords
- node
- transistor
- level
- power supply
- charge pump
- Prior art date
Links
- 238000000034 method Methods 0.000 title claims description 18
- 239000003990 capacitor Substances 0.000 claims abstract description 75
- 238000005086 pumping Methods 0.000 claims abstract description 33
- 230000009471 action Effects 0.000 claims abstract description 19
- 238000007667 floating Methods 0.000 claims abstract description 10
- 230000004044 response Effects 0.000 claims description 32
- 230000008859 change Effects 0.000 claims description 9
- 239000004065 semiconductor Substances 0.000 claims description 3
- 230000000977 initiatory effect Effects 0.000 description 32
- 238000010586 diagram Methods 0.000 description 14
- 239000013256 coordination polymer Substances 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 2
- 229910044991 metal oxide Inorganic materials 0.000 description 2
- 150000004706 metal oxides Chemical class 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 238000006731 degradation reaction Methods 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- 238000004146 energy storage Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M3/00—Conversion of dc power input into dc power output
- H02M3/02—Conversion of dc power input into dc power output without intermediate conversion into ac
- H02M3/04—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters
- H02M3/06—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using resistors or capacitors, e.g. potential divider
- H02M3/07—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using resistors or capacitors, e.g. potential divider using capacitors charged and discharged alternately by semiconductor devices with control electrode, e.g. charge pumps
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/0203—Particular design considerations for integrated circuits
- H01L27/0248—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection
- H01L27/0251—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices
- H01L27/0266—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices using field effect transistors as protective elements
- H01L27/0285—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices using field effect transistors as protective elements bias arrangements for gate electrode of field effect transistors, e.g. RC networks, voltage partitioning circuits
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M1/00—Details of apparatus for conversion
- H02M1/36—Means for starting or stopping converters
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
- H03K19/02—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components
- H03K19/173—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using elementary logic circuits as components
- H03K19/1733—Controllable logic circuits
- H03K19/1738—Controllable logic circuits using cascode switch logic [CSL] or cascode emitter coupled logic [CECL]
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computing Systems (AREA)
- General Engineering & Computer Science (AREA)
- Mathematical Physics (AREA)
- Dc-Dc Converters (AREA)
- Semiconductor Integrated Circuits (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US14/189,553 US9209681B2 (en) | 2014-02-25 | 2014-02-25 | Charge pump initialization device, integrated circuit having charge pump initialization device, and method of operation |
US14/189,553 | 2014-02-25 |
Publications (2)
Publication Number | Publication Date |
---|---|
KR20150100475A KR20150100475A (ko) | 2015-09-02 |
KR101659169B1 true KR101659169B1 (ko) | 2016-09-30 |
Family
ID=53883190
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1020140148921A KR101659169B1 (ko) | 2014-02-25 | 2014-10-30 | 전하 펌프 초기화 디바이스, 전하 펌프 초기화 디바이스를 갖는 집적 회로, 및 동작 방법 |
Country Status (4)
Country | Link |
---|---|
US (2) | US9209681B2 (zh) |
KR (1) | KR101659169B1 (zh) |
CN (1) | CN104868717B (zh) |
TW (1) | TWI527349B (zh) |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US10097086B2 (en) * | 2016-10-12 | 2018-10-09 | Cypress Semiconductor Corporation | Fast ramp low supply charge pump circuits |
CN108233691B (zh) * | 2017-12-15 | 2020-02-07 | 普冉半导体(上海)有限公司 | 一种电荷泵启动完成标志信号产生电路 |
KR102523373B1 (ko) * | 2018-11-13 | 2023-04-18 | 삼성전기주식회사 | 네가티브 전압 회로 |
Family Cites Families (15)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE19928309C2 (de) * | 1999-06-21 | 2002-03-28 | Texas Instruments Deutschland | Gleichspannungswandler |
US6255896B1 (en) * | 1999-09-27 | 2001-07-03 | Intel Corporation | Method and apparatus for rapid initialization of charge pump circuits |
US6366158B1 (en) * | 2000-12-27 | 2002-04-02 | Intel Corporation | Self initialization for charge pumps |
US6552600B2 (en) * | 2001-03-15 | 2003-04-22 | Intel Corporation | Initialization of negative charge pump |
US7002381B1 (en) * | 2001-12-11 | 2006-02-21 | Advanced Micro Devices, Inc. | Switched-capacitor controller to control the rise times of on-chip generated high voltages |
TWI298828B (en) * | 2005-06-29 | 2008-07-11 | Novatek Microelectronics Corp | Charge pump for generating arbitrary voltage level |
US7271642B2 (en) * | 2005-12-27 | 2007-09-18 | Aimtron Technology Corp. | Charge pump drive circuit for a light emitting diode |
US8040174B2 (en) | 2008-06-19 | 2011-10-18 | Sandisk Il Ltd. | Charge coupled pump-efficient charge pump regulator with MOS capacitor |
CN101771340B (zh) * | 2008-12-31 | 2012-10-31 | 中芯国际集成电路制造(上海)有限公司 | 电荷泵 |
US8223576B2 (en) | 2009-03-31 | 2012-07-17 | Taiwan Semiconductor Manufacturing Company, Ltd. | Regulators regulating charge pump and memory circuits thereof |
KR101024632B1 (ko) * | 2009-11-12 | 2011-03-25 | 매그나칩 반도체 유한회사 | 차지펌프 회로 및 이의 차지펌핑 방법 |
US8300489B2 (en) * | 2010-01-12 | 2012-10-30 | International Business Machines Corporation | Charge pump system and method utilizing adjustable output charge and compilation system and method for use by the charge pump |
JP5781403B2 (ja) * | 2011-08-31 | 2015-09-24 | 日立オートモティブシステムズ株式会社 | キャパシタプリチャージ回路、モータ駆動システム、電動パワーステアリングシステム、エアバッグシステム |
US20130214851A1 (en) * | 2012-02-16 | 2013-08-22 | International Business Machines Corporation | Voltage pump using high-performance, thin-oxide devices and methods of use |
TWI481163B (zh) | 2012-02-24 | 2015-04-11 | Novatek Microelectronics Corp | 充電幫浦裝置及其驅動能力調整方法 |
-
2014
- 2014-02-25 US US14/189,553 patent/US9209681B2/en not_active Expired - Fee Related
- 2014-05-15 CN CN201410206138.7A patent/CN104868717B/zh not_active Expired - Fee Related
- 2014-08-25 TW TW103129144A patent/TWI527349B/zh active
- 2014-10-30 KR KR1020140148921A patent/KR101659169B1/ko active IP Right Grant
-
2015
- 2015-11-20 US US14/947,018 patent/US9570977B2/en active Active
Also Published As
Publication number | Publication date |
---|---|
KR20150100475A (ko) | 2015-09-02 |
CN104868717A (zh) | 2015-08-26 |
TWI527349B (zh) | 2016-03-21 |
US9570977B2 (en) | 2017-02-14 |
US9209681B2 (en) | 2015-12-08 |
US20150244258A1 (en) | 2015-08-27 |
US20160079849A1 (en) | 2016-03-17 |
TW201534029A (zh) | 2015-09-01 |
CN104868717B (zh) | 2017-10-13 |
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