KR101638487B1 - Reflect for ingot grower and ingot grower including the same - Google Patents

Abstract

Provided is a reflector for an ingot growing apparatus, which can prevent deterioration in the quality of an ingot. According to an embodiment of the present invention, the reflector for an ingot growing apparatus comprises: a hollow body having open upper and lower parts; and an anti-contamination member arranged on the lower side of the body in order to prevent deterioration in the quality of an ingot caused by contact between the ingot and a silicone material in the case of supplying the silicone material to a crucible.

Description

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a reflector for an ingot growing apparatus and an ingot growing apparatus including the reflector.

The present invention relates to a reflector used in an ingot growing apparatus, and more particularly, to a reflector used in an ingot growing apparatus, and more particularly to a reflector used in an ingot growing apparatus to prevent a silicon raw material, which is supplied when a silicon raw material is supplied to a double crucible, from being contaminated or a structure loss due to particle hits To a reflector for an ingot growing apparatus.

Generally, a Czochralski process is used in which a silicon single crystal ingot is grown by melting silicon in a crucible 20, bringing the seed into contact with molten silicon, and slowly pulling the silicon ingot by rotation, as a method of growing a single crystal ingot of silicon .

1, a general ingot growing apparatus 1 for implementing the Czochralski method includes a chamber 10, a crucible 20 installed inside the chamber, a susceptor 30 for supporting the crucible, A pedestal 40 for raising, lowering, and rotating the crucible, a heater (not shown) provided on the inner wall of the chamber, a reflector 50 disposed on the upper side of the crucible, and the like. After dipping on the surface, the ingot is gradually grown up.

At this time, the continuous growth type Czochralski process (CCZ) is a method of continuously growing the ingot by continuously injecting the solid state polysilicon into the crucible side. That is, the polysilicon particles and the dopant are continuously supplied to the crucible side to keep the level of the molten silicon constant at all times, thereby supplementing the consumed amount of the molten silicon solution during the growth of the ingot.

In the continuously growing type Czochralski process (CCZ), a crucible used for producing a single crystal silicon ingot generally has a double crucible in which an inner crucible and an outer crucible are formed by providing a partition wall therein. In the outer crucible, The melting of the particles occurs and a single crystal silicon ingot is grown in the inner crucible.

To this end, a supply tube 70 made of quartz is mounted on the supply port of the ingot growing apparatus and extends from the supply port 60 to the upper side of the molten silicon so that the lower end of the supply tube is located between the outer crucible and the inner crucible Thereby replenishing polysilicon particles.

However, in the process of replenishing the polysilicon particles to the outer crucible and the inner crucible through the supply port, the polysilicon drops rapidly from the supply port toward the crucible side, and thus collides with the polysilicon particles existing between the outer crucible and the inner crucible And is caused to bounce upward by repulsive force.

Accordingly, the protruding polysilicon particles collide with the lower surface of the reflector made of graphite, and then fall down to the crucible side and are melted by heat. That is, when the polysilicon in contact with graphite is melted and melted in the silicon melt, the carbon concentration in the silicon melt is increased due to the contact with the graphite, and the concentration of carbon contained in the ingot, which is the final product, is also increased. do.

Further, when the polysilicon particles are repeatedly brought into contact with the reflector exposed to the high temperature environment, the contact polysilicon is melted and deposited on the lower surface of the reflector. In this case, there is a problem that the graphite constituting the reflector and the silicon deposited on the lower surface of the reflector are different from each other in thermal expansion coefficient, causing a crack in the reflector during the high-temperature process or cooling.

In addition, when polysilicon is injected into the crucible side, the polysilicon protruding upward due to the repulsive force flows on the interface of the silicon melt directly growing the ingot and floats, which acts as a cause of particle hits, It is impossible to grow the single crystal, which is a serious cause of deterioration of the productivity of the silicon single crystal.

KR 10-1392240 B1

SUMMARY OF THE INVENTION The present invention has been made in order to solve the above-mentioned problems, and it is an object of the present invention to provide a method of manufacturing a silicon wafer, in which the silicon raw material is sprung from the crucible and contacts the reflector, And an ingot growing apparatus including the reflector. The present invention also provides an ingot growing apparatus including the reflector.

The present invention also relates to a reflector for an ingot growth apparatus capable of preventing structure loss due to particle heat by blocking introduction of a silicon raw material supplied to a crucible through a contamination preventing member into an inner region where an ingot is grown, Another object of the present invention is to provide an ingot growing apparatus including the same.

To achieve the above object, the present invention provides a reflector installed in an ingot growing apparatus, comprising: a hollow body having upper and lower openings; And a contamination preventing member provided on a lower side of the body so as to prevent quality deterioration of the ingot due to contact with the silicon raw material during supply of the silicon raw material to the crucible side.

The contamination preventing member may include a first portion detachably coupled to the body and a second portion extending from the first portion to a lower portion.

In addition, the body may include a mounting hole formed in a height direction to provide a raw material supply pipe for supplying the silicon raw material, and the first portion may include a through hole formed in a region corresponding to the mounting hole And may be disposed on the lower surface of the body to have a predetermined area.

The crucible may be divided into a first space through which the ingot is grown and a second space through which the silicon raw material is injected through the bulb, and the first space and the second space through the at least one communication path formed in the bulb And the second portion may be arranged to be positioned directly above the bulb or directly above the second space.

The body includes a hollow first body and a second body having open upper and lower portions, and the second body includes a ring-shaped protrusion extending a predetermined length inwardly from a lower end, The member may be detachably coupled to the second body via a ring-shaped support member having an outer edge hooked to the protrusion.

The support member may include an arc-shaped opening that is drawn inwardly from the outer end, and the contamination prevention member may have a shape in which the first portion is disposed in the opening portion and the both ends of the first portion are protruded outward A pair of projecting portions are provided on the end sides of the opening and the protruding portions, respectively, and the groove portions corresponding to the pair of projecting portions are provided, respectively, so that the first portion can be engaged by the supporting member and the projecting portion.

The auxiliary ring includes a ring-shaped auxiliary ring disposed on the inner side of the support member. The auxiliary ring has an outer rim attached to an inner rim of the support member or an inner rim of the contamination preventing member, And an end of the auxiliary ring may be disposed in contact with one surface of the auxiliary ring.

In addition, the contamination preventing member may be made of quartz.

In addition, the contamination preventing member may be partially or entirely provided on the lower surface of the body.

According to another aspect of the present invention, A crucible disposed in the chamber and storing a predetermined amount of the silicon melt; And the above-described reflector disposed on the upper side of the crucible so as to block the transfer of heat to the ingot in the course of growing the ingot by gradually raising the single crystal seed dipped into the silicon melt do.

According to the present invention, it is possible to prevent deterioration of the quality of the ingot even if the silicon raw material is sprung from the crucible and brought into contact with the reflector in the course of the introduction of the silicon raw material by arranging the contamination preventing member made of quartz material on the lower side of the reflector, To prevent ingress of silicon raw material supplied into the inner region where the ingot grows, thereby preventing structure loss due to particle hit.

1 is a schematic view showing a general ingot growing apparatus,
Fig. 2 is a partial cutaway view showing a general double crucible. Fig.
3 is a perspective view showing a reflector for an ingot growing apparatus according to the present invention.
4 is an exploded view of Fig.
5 is a cross-sectional view taken along line AA in Fig. 3,
6 is a schematic view showing an ingot growing apparatus to which a reflector for an ingot growing apparatus according to the present invention is applied,
7 is a schematic view showing a process of supplying a silicon raw material through a reflector according to the present invention.

Hereinafter, preferred embodiments of the present invention will be described in detail with reference to the drawings.

In order to facilitate understanding of the present invention, the same reference numerals will be used to denote the same constituent elements even if they are shown in different drawings.

The reflector 100 for an ingot growing apparatus according to the present invention includes a body 110 and a pollution prevention member 120 as shown in FIGS.

The body 110 is disposed at the upper side of the crucible 20 in which a predetermined amount of the silicon melt as a raw material of the ingot is stored. The body 110 has an open top and an open bottom so that the opening area gradually increases from the bottom to the top.

Accordingly, the single crystal seed is dipped into the silicon melt through the opened central portion of the body 110, and is gradually pulled up to block the heat transfer to the ingot side in the course of growing the ingot.

At this time, the body 110 is provided with an installation hole 113 formed to pass from the upper side to the lower side along the height direction.

In this installation hole 113, a raw material supply pipe 70 for supplying silicon particles to the crucible 20 side is inserted to supplement the amount of silicon melt consumed in the process. That is, the raw material supply pipe 70 can be stably supplied with silicon particles into the crucible 20 by disposing the lower end of the raw material supply pipe 70 through the installation hole 113 so as to be spaced apart from the interface of the molten silicon.

The body 110 may include a first body 111 and a second body 112 that may be made of graphite having good thermal conductivity and may be made of one cylinder but can be separated from each other to facilitate installation and maintenance. (See FIGS. 3 and 4).

The first body 111 is disposed inside the second body 112, and the first body 111 and the second body 112 are open. The first body 111 may be mounted on the second flange 112a of the second body 112 by being provided with a first flange 111a extending to the outside at a predetermined length.

The second body 112 has a second flange 112a and a second flange 112b. The second flange 112a has an upper portion and a lower portion. do. Accordingly, the first body 111 is placed inside the second body 112 by placing the first flange 111a on the second flange 112a.

At this time, a heat insulating material 150 may be disposed between the first body 111 and the second body 112 to prevent heat from being transferred from the second body 112 to the first body 111. [

The second body 112 has a ring-shaped second flange 112a on which the first flange 111a is placed and a side wall part 112b extending from the inner edge of the second flange 112a downward to a predetermined length, And a ring-shaped protrusion 112c extending a predetermined length inward from the lower end of the side wall portion 112b.

Accordingly, a predetermined space formed by one side of the first body 111, the side wall 112b, and the protrusion 112c is provided between the first body 111 and the second body 112 A heat insulating material 150 may be disposed in the space.

In the meantime, the reflector 100 according to the present invention can be manufactured by supplying the silicon raw material to the crucible 20 in a process of supplying the silicon raw material to the crucible 20 so as to maintain a predetermined amount of the silicon melt consumed during the growth of the ingot through the pulling- (120) for preventing the ingot from flowing into the first space (S1) side in which the ingot grows in contact with the reflector (100) by being repelled by the repulsive force or in a solid state to reduce the quality of the ingot .

That is, the contamination preventing member 120 is disposed on the lower surface side of the body 110 so as to surround the installation hole 113 through which the raw material supply pipe 70 passes, So that the silicon raw material sprung by the repulsive force of the silicon raw material can be brought into contact with the contamination preventing member 120.

The contamination preventing member 120 includes a plate-like first portion 121 through which a through hole 124 is formed to pass through the material supply pipe 70 in a region corresponding to the installation hole 113, And a second portion 122 extending a predetermined length downward from the first portion 121.

At this time, the contamination prevention member 120 may be made of quartz. Accordingly, even if the silicon raw material bouncing due to the repulsive force strikes the contamination preventing member 120 and then falls back to the crucible 20, contamination of the silicon raw material due to contact can be prevented.

In addition, the second part 122 extends downward from the first part 121 by a predetermined length, so that the granular or powdery silicon raw material springing upward from the second space S2 is directly transferred to the first space S1 side. It is prevented from being moved.

Therefore, the silicon raw material injected into the crucible 20 through the raw material supply pipe 70 is always introduced only to the second space S2 partitioned by the bulb tube 22, It is possible to grow the ingot in a stable manner by flowing into the space S2 and to prevent the quality of the ingot from deteriorating.

That is, the silicon raw material or powdery silicon supplied to the second space S2 through the second portion 122 is moved to the first space S1 side where the ingot is directly grown beyond the upper end of the bulb tube 22 Thereby preventing direct contact with the interface between the silicon melt contained in the first space S1 and the structure loss due to the particle hit.

In this case, the crucible 20 is provided in a hollow shape with its top opened. The crucible 20 has a first space S1 through which the ingot is grown through a cylindrical bulb 22 having an open top, The first space S1 and the second space S2 are connected to each other through at least one communication path 24 defined in the first space S2 and formed in the bulb 22 (see FIG. 2).

Thus, the silicon raw material introduced into the second space S2 through the raw material supply pipe 70 is melted by heat and then flows into the first space S1 through the communication path, The silicon melt remains at the same level in the second space S2.

At this time, the contamination prevention member 120 may be provided entirely on the lower surface of the body 110, but may be partially provided.

The contamination preventing member 120 may be detachably coupled to the second body 112 via the support member 130 to be replaceable.

For example, the support member 130 is provided in a ring shape and has a first protrusion 133 protruding in a radial direction along an outer edge of the protrusion 112c of the second body 112, And a groove 112d corresponding to the first protrusion 133 is provided (see FIG. 4).

Accordingly, when the support member 130 is disposed inside the second body 112, the first protrusion 133 is engaged with the groove 112d formed in the protrusion 112c.

At this time, the support member 130 has an opening 131 formed in a part thereof to be drawn inward from the outer edge. Here, the opening 131 is provided to have a size corresponding to the first portion 121 of the contamination preventing member 120.

Accordingly, if the contamination preventing member 120 is disposed on the opening 131 side, the contamination preventing member 120 and the supporting member 130 form one circle.

In addition, the contamination prevention member 120 has a pair of second protrusions 123 protruding outward from both ends of the first portion 121, and the second protrusions 123 The groove portion 132 is formed.

Accordingly, when the contamination preventing member 120 is disposed in the opening 131, the pair of second projections 123 are engaged with the groove 112d of the projection 112c and the groove 132 of the opening 131, respectively. So that it is stably supported by the protrusion 112c of the second body 112 and the support member 130.

When the contamination preventing member 120 needs to be replaced, the contamination preventing member 120 is lifted up over the groove portion 112d of the protrusion 112c and the groove 132 of the opening 131, It is possible to replace only the battery 120 easily.

The second portion 122 may be formed in the second space S2 so that the silicon raw material spontaneously protruding from the second space S2 is prevented from being moved to the first space S1 side through the upper end of the bulbous tube 22. [ 22 or directly above the second space S2.

The lower edge of the first body 111 may directly contact one surface of the antifouling member 120 but may be formed on the upper surface of the ring- Or may be arranged to be in contact with the surface.

That is, the auxiliary ring 140, which is formed in a ring shape, has an outer rim hooked to the inner rim of the support member 130, and the lower end of the first body 111 is attached to one surface of the auxiliary ring 140 As shown in FIG.

The reflector 100 according to the present invention can be applied to the ingot growing apparatus 1 for growing an ingot through the Czochralski method (see FIG. 6). That is, the ingot growing apparatus 1 includes a chamber 10, a crucible 20 installed in the chamber, a susceptor 30 supporting the crucible 20, and a crucible 20 which are raised, And a heater (not shown) for radiating heat to the crucible 20. The reflector 100 may be disposed on the upper side of the crucible 20. The pedestal 40 may be a pedestal, have.

In addition, the ingot growing apparatus 1 may include a raw material supply pipe 70 for supplying the silicon raw material to the crucible 20 side. The raw material supply pipe 70 may include a mounting hole 70 formed through the reflector 100, (113).

Here, the crucible 20 may be a double crucible that is divided into a first space S1 in which the ingot is grown by the bulb tube 22 and a second space S2 into which the silicon raw material is introduced, as described above.

Such a constitution is a general configuration of the ingot growing apparatus 1, and a detailed description thereof will be omitted.

While the foregoing is directed in detail to a particular embodiment of the invention with reference to the drawings, it is not intended to limit the invention to this specific construction. It will be understood by those skilled in the art that various changes in form and details may be made therein without departing from the spirit and scope of the invention as defined by the appended claims. It is to be expressly understood, however, that equivalents, modifications and substitutions through such simple design variations or modifications are expressly included within the scope of the present invention.

100: Reflector for ingot growing apparatus
110: body 111: first body
111a: first flange 112: second body
112a: second flange 112b:
112c: projecting portion 112d:
113: installation hole 120: pollution prevention member
121: first part 122: second part
123: second protrusion 124: through hole
130: support member 131: opening
132: groove portion 133: first projection portion
140: auxiliary ring 150: insulation
10: chamber 20: crucible
22: bulge S1: first space
S2: second space 30: susceptor
40: Pedestal 50: Reflector
70: supply pipe

Claims (10)

delete delete In a reflector installed in an ingot growing apparatus,
A body including an installation hole provided in a hollow shape having an open top and a bottom and formed to penetrate along a height direction and to provide a raw material supply pipe for providing a path for introducing a silicon raw material; And
And a contamination preventing member provided on a lower side of the body so as to prevent deterioration of quality of the ingot due to contact with the silicon raw material when the silicon raw material is supplied to the crucible side,
Wherein the contamination preventing member includes a first portion detachably coupled to the body and a second portion extending from the first portion to a lower portion with a predetermined length,
Wherein the first portion is disposed on a lower surface of the body so as to have a predetermined area including a through hole formed in a region corresponding to the installation hole. In a reflector installed in an ingot growing apparatus,
A hollow body having upper and lower openings; And
And a contamination preventing member provided on a lower side of the body so as to prevent quality deterioration of the ingot due to contact with the silicon raw material when the silicon raw material is supplied to the crucible side,
Wherein the contamination preventing member includes a first portion detachably coupled to the body and a second portion extending from the first portion to a lower portion with a predetermined length,
Wherein the crucible is divided into a first space through which the ingot is grown and a second space through which the silicon raw material is injected through the bulb tube, and the first space and the second space communicate with each other through at least one communication path formed in the bulb Connected,
And the second portion is disposed so as to be positioned immediately above the bulb or directly above the second space. In a reflector installed in an ingot growing apparatus,
A body including a hollow first body and a second body, the upper body and the lower body being open; And
And a contamination preventing member provided on a lower side of the body so as to prevent quality deterioration of the ingot due to contact with the silicon raw material when the silicon raw material is supplied to the crucible side,
Wherein the contamination preventing member includes a first portion detachably coupled to the body and a second portion extending from the first portion to a lower portion with a predetermined length,
Wherein the second body includes a ring-shaped protrusion extending a predetermined length inwardly from a lower end thereof,
Wherein the contamination preventing member is detachably coupled to the second body via a ring-shaped support member whose outer rim is hooked to the protruding portion. 6. The method of claim 5,
Wherein the support member includes an arc-shaped opening that is drawn inwardly from an outer end thereof, wherein the first portion is disposed in the opening, and the pair of protrusions And a groove portion corresponding to the pair of projections is provided on an end side of the opening and the projecting portion so that the first portion is engaged by the support member and the projecting portion. 6. The method of claim 5,
And a ring-shaped auxiliary ring disposed inside the support member,
Wherein the auxiliary ring has an outer rim attached to an inner rim of the support member or an inner rim of the contamination preventing member, and the first body is disposed such that its lower end is in contact with one surface of the auxiliary ring. 8. The method according to any one of claims 3 to 7,
Wherein the contamination preventing member is made of quartz. 8. The method according to any one of claims 3 to 7,
Wherein the contamination preventing member is partially or entirely provided on the lower surface of the body. chamber;
A crucible disposed in the chamber and storing a predetermined amount of the silicon melt; And
The method according to any one of claims 3 to 7, wherein the silicon melt is placed on the upper side of the crucible so as to block the transfer of heat to the ingot during the step of slowly pulling the single crystal seed dipped in the silicon melt to grow the ingot. And a reflector.

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