KR101624837B1 - Chemical mechanical polishing system with movable spindle - Google Patents

Chemical mechanical polishing system with movable spindle Download PDF

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Publication number
KR101624837B1
KR101624837B1 KR1020150091852A KR20150091852A KR101624837B1 KR 101624837 B1 KR101624837 B1 KR 101624837B1 KR 1020150091852 A KR1020150091852 A KR 1020150091852A KR 20150091852 A KR20150091852 A KR 20150091852A KR 101624837 B1 KR101624837 B1 KR 101624837B1
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KR
South Korea
Prior art keywords
spindle
polishing
chemical mechanical
substrate
mechanical polishing
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KR1020150091852A
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Korean (ko)
Inventor
박영규
손병철
최혁열
Original Assignee
삼성전자주식회사
주식회사 케이씨텍
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Priority to KR1020150091852A priority Critical patent/KR101624837B1/en
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Publication of KR101624837B1 publication Critical patent/KR101624837B1/en

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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304Mechanical treatment, e.g. grinding, polishing, cutting
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02002Preparing wafers
    • H01L21/02005Preparing bulk and homogeneous wafers
    • H01L21/02008Multistep processes
    • H01L21/0201Specific process step
    • H01L21/02024Mirror polishing

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)

Abstract

The present invention relates to a chemical mechanical polishing (CMP) system. Provided is a CMP system which comprises a spindle which can move along a guide rail while mounting a substrate and reaches a first position where a polishing plate for a CMP process is located; a posture fixing part which has a pin-type confinement member inserted into an accommodating groove formed on the upper surface of the spindle, when the spindle reaches the first position. The rotation displacement of the spindle is fundamentally confined. A predetermined posture is stably maintained. A high-accuracy polishing process can be carried out while the substrate stably touches the polishing pad of the polishing plate.

Description

Technical Field [0001] The present invention relates to a chemical mechanical polishing system having a movable spindle,

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a chemical mechanical polishing system, and more particularly, to a chemical mechanical polishing system, in which a spindle on which a substrate is mounted is stopped on a polishing table while moving in a predetermined path, And more particularly, to a chemical mechanical polishing system that stably maintains the posture of the spindle even when rotating.

BACKGROUND ART Generally, a chemical mechanical polishing (CMP) process is known as a standard process for polishing a surface of a substrate by relatively rotating between a substrate such as a wafer for manufacturing a semiconductor provided with a polishing layer and a polishing table.

The chemical mechanical polishing system is configured to rotate the substrate 55 while pressing the substrate 55 in a state in which the substrate 55 to be polished is in close contact with the rotating polishing pad 111 and at the same time, The polishing surface of the substrate 55 is planarized while being supplied from the supply part 150. [

In recent years, in order to more precisely and efficiently polish the substrate 55 in a predetermined space, a substrate 55 is mounted on the spindle 20, and the substrate 55 is subjected to a multistage polishing process in two or more polishing plates 110 Method has been proposed. According to Korean Patent Registration No. 10-1188540 filed by the present applicant and patented by the present applicant, as shown in FIG. 1, a substrate 55 is mounted on a spindle 20, and a guide rail 130R A method has been proposed in which the polishing process is performed in the polishing platen 110 disposed on the movement path while moving (120d) along the predetermined path (130).

1 is a carrier moving unit that moves along a rail 135 forming part of a path with the spindle 20 mounted thereon.

2, the spindle 20 is guided by the guide rails 130R and moves along the predetermined path 130 while the substrate 55 is mounted on the polishing head 21 on the lower side To this end, the spindle 20 is provided with a roller 27 which moves along the guide rail 130R.

When the spindle 20 is positioned above the polishing table 110 on which the chemical mechanical polishing process is performed, the docking unit 180 shown in FIG. 3 is docked on the spindle 20 to rotate the substrate 55, And the air pressure required for pressing the substrate 55. That is, the coupling shaft 186, which is rotationally driven by the rotation motor 185 of the docking unit 180, moves in the axial direction 185d, and the rotational driving force is transmitted to the spindle by the magnetic coupler of the spindle 20 in a non- . When the coupling shaft 186 of the docking unit 180 is inserted and docked into the magnetic coupler 24 of the spindle 20, the connector 187 of the pneumatic supply pipe 187a of the docking unit 180 is rotated by the spindle 20 so that the air pressure can be supplied. Then, a chemical mechanical polishing process for the substrate 55 is performed.

However, in order for the spindle 20 to move along the guide rail 130R, there is a gap in which the spindle 20 can move in the up-and-down direction, so that the spindle 20 is moved to a predetermined position There is a problem in that the coupling shaft 186 of the docking unit 180 and the pneumatic supply connector 187 are not correctly docked to the spindle 20 in a state in which the chemical mechanical polishing process is performed.

In addition, in the chemical mechanical polishing process, the polishing pad 111 attached to the upper surface of the polishing platen 110 rotates, and at the same time the polishing head 21 of the spindle 20 pressing the substrate W is also rotated, (20) is continuously subjected to a force of rotation about the vertical direction. Therefore, there is a problem that the spindle 20 is kept in an unstable state during the chemical mechanical polishing process.

4A, a recess 29 is formed in the upper surface of the spindle 20 and a protrusion 191 of the posture fixing portion 190 is formed in the groove 29 The coupling shaft 186 of the docking unit 180 can be accurately docked 185d onto the spindle 20 by fixing the posture of the spindle 20 on the upper side of the polishing platen 110 .

However, even if the position of the spindle 20 is fixed by the position fixing protrusion 191 on the upper surface of the spindle 20, the degree of freedom in which the spindle 20 rotates around the axis in the extending direction of the guide rail 130R is not constrained Even if the spindle 20 reaches a predetermined position on the polishing platen 110 and the position of the spindle 20 is fixed to the position fixing protrusion 191, it is necessary to finely dock the spindle 20 due to a slight twist of the spindle 20 There has been a problem that an error occurs when the pneumatic feed connector 187 is docked to the spindle 20. [

SUMMARY OF THE INVENTION The present invention has been made in order to solve the above-mentioned problems, and it is an object of the present invention to provide a polishing apparatus and a polishing apparatus, And the connector and the rotary shaft for supplying the air pressure can be docked reliably and smoothly.

The present invention also aims to keep the spindle constant and stable in spite of the friction caused by the relative rotation of the polishing pad and the substrate during the chemical mechanical polishing process.

That is, even if the spindle is subjected to a chemical mechanical polishing process in a movable state, it is possible to prevent the posture of the spindle from fluctuating due to the frictional force transmitted from the wafer during the chemical mechanical polishing process, The purpose is to carry out.

In order to achieve the above-mentioned object, the present invention provides a polishing apparatus comprising: a spindle installed to move along a guide rail in a state where a substrate is mounted and move to reach a first position where a polishing platen on which a chemical mechanical polishing process is performed is located; ; And a pin-type restraining member inserted into a receiving groove formed on an upper surface of the spindle when the spindle reaches the first position; The present invention also provides a chemical mechanical polishing system comprising:

This is because, when the spindle moves along the guide rail and reaches a predetermined position on the upper side of the polishing platen, the posture fixing portion suppresses the displacement of the substrate carrier in the vertical direction and the horizontal spin rotation so that the displacement of the spindle is restrained, In order to ensure that it is maintained.

Accordingly, as the substrate is relatively rotated while being pressed against the polishing platen, the spindle mounting the substrate is subjected to a reaction force to rotate to one side, causing a posture to be changed. The posture fixing portion connected to the frame moves the spindle Is fixed firmly so as not to be tilted from a predetermined posture so that a phenomenon in which the posture is tilted on one side even in the case of relative rotation in contact with the polishing platen during the polishing process is restrained and the polishing process with reduced swinging and slipping phenomenon can be performed do.

Here, the confining member and the accommodating portion are each formed of two or more pieces on one surface of the spindle.

At this time, the distal end portion of the pin-shaped restraint member is formed with a tapered inclined surface so that even when the pin-shaped restraint member is not perfectly aligned with the receiving recess, the restraint member is inserted into the receiving recess, And at the same time, as the fitting depth of the restricting member and the accommodating portion increases, the degree of engagement between the restricting member and the accommodating portion can be guided to become firm.

The contents disclosed in Korean Patent Registration No. 10-1188540 filed by the present applicant and patented are incorporated herein by reference.

As described above, according to the present invention, as the spindle moves freely and independently along the guide rails, it is inevitably an unstable posture in which the swinging is generated during the polishing process in which relative rotation is performed while being in contact with the polishing platen in one place. By restraining the movement of the substrate carrier by the fixing portion, it is possible to obtain an advantageous effect that the rotational displacement of the spindle can be originally restrained and can be firmly maintained in a predetermined posture.

Thus, according to the present invention, a polishing process is performed in a state in which the substrate is in stable contact with the polishing pad of the polishing platen while restricting the phenomenon that the polishing pad is in contact with the polishing platen during relative rotation, It is possible to obtain the effect of performing the polishing process in which the swinging motion and the slip phenomenon are reduced.

BRIEF DESCRIPTION OF THE DRAWINGS Fig. 1 is a schematic diagram showing the arrangement of a chemical mechanical polishing system,
Fig. 2 shows a configuration in which the spindle of Fig. 1 moves along a guide rail, Fig.
3 is a cross-sectional view taken along line III-III in Fig. 2,
FIG. 4 is a perspective view showing a configuration of a spindle and an attitude fixing unit of a chemical mechanical polishing system according to an embodiment of the present invention,
Fig. 5 is a front view of Fig. 4,
6 is an enlarged view of a portion 'A' in FIG. 4,
FIGS. 7A and 7B are enlarged views of a portion 'B' in FIG. 5,
Figs. 8A and 8B are views for explaining the principle of fixing the attitude of the spindle by the attitude fixing portion of Fig. 4;

Hereinafter, a chemical mechanical polishing system 100 according to an embodiment of the present invention will be described in detail with reference to the accompanying drawings. In the following description, well-known functions or constructions are not described in detail to avoid obscuring the subject matter of the present invention.

FIG. 4 is a perspective view showing a configuration of a spindle and a posture fixing part of a chemical mechanical polishing system according to an embodiment of the present invention, FIG. 5 is a front view of FIG. 4, and FIG. 6 is an enlarged view And FIGS. 7A and 7B are enlarged views of the portion 'B' of FIG. 5 to explain the operation principle of the attitude fixing portion. FIGS. 8A and 8B are views for explaining the principle of fixing the attitude of the spindle by the attitude fixing portion of FIG. Fig.

As shown in the drawing, a chemical mechanical polishing system 100 according to an embodiment of the present invention includes a plurality of polishing platens 110 (hereinafter, referred to as " polishing " A guide rail 130R arranged to be spaced apart from the upper side of the polishing platen 110 arranged across a plurality of polishing platens 110 and a substrate 55 on which a chemical mechanical polishing process is to be carried, A spindle 120 that travels along a path 130 along the rail 130R and a slurry supply device 120 for supplying slurry on the polishing pad for chemical polishing when the substrate 55 is polished while rotating on the polishing platen 110 Unit 150 and a conditioner for causing the slurry supplied by the slurry supply unit 150 to spread evenly on the polishing pad 111 and a polishing table 110 on which the spindle 120 is scheduled to perform the chemical mechanical polishing process, The first predetermined position A docking unit 180 for docking the spindle 120 to supply at least one of pneumatic pressure, rotational driving force, and electric power, and a docking unit 180 for docking the spindle 120 to hold the posture so as to maintain the predetermined position and posture at the first position. And a posture fixing unit 190.

The polishing table 110 is fixed to the frame 10 so as to be rotatable for polishing a substrate 55 such as a wafer and a polishing pad 111 for polishing the substrate 55 is attached to the uppermost layer, And a backing layer of a more soft material is interposed therebetween so that the polishing process is performed while being in contact with the polishing surface of the substrate 55 during the chemical mechanical polishing process. Here, the polishing platen 110 is arranged in two or more along the path along which the spindle 120 moves.

When the slurry is supplied from the slurry supply unit 150 onto the polishing pad 111 of the polishing platen 110 as described in the known chemical mechanical polishing apparatus, the conditioner performs a reciprocating sweep motion at a predetermined angle The polishing pad 111 is pressed to modify the slurry on the surface of the polishing pad 111 so that the slurry spreads evenly and uniformly. This allows the substrate 55 mounted on the polishing head 121 to contact the polishing pad and perform a relative rotational motion with respect to each other so that the supplied slurry can be supplied to the substrate 55 in a uniform and sufficient amount.

The slurry supply unit 150 supplies the slurry onto the polishing pad of the polishing platen 110. When the polishing of the substrate 55 is performed with two or more types of slurry, 110). To this end, all the slurries supplied on the polishing platen 110 are not supplied in the same kind, and a proper slurry is sequentially selected and supplied onto the polishing pad in accordance with the polishing process of the substrate 55.

The guide rail 130R guides the movement path in a state where the spindle 120 is mounted on the lower polishing head 121 of the substrate 55. [ 4, the guide rails 130R are positioned on both sides of the spindle 120 and supported by rollers 127 rotatably installed on both sides of the spindle 120 to be rolled. Here, the roller 127 may be provided both on the upper side and the lower side of the guide roller 130R, but may be located only on the upper side of the guide roller 130R.

The spindle 120 is installed so as to be movable along the guide rail 130R with a facility for rotating the substrate W and pressing the substrate W downward for a chemical mechanical polishing process.

For example, the spindle 120 is equipped with a drive motor for generating a rotational driving force and a rotary union for distributing a pneumatic pressure. The roller 127 is moved by itself while rotating the roller 127, The rotational driving force and the pressing force can be supplied by themselves.

However, since the weight of the spindle 120 is increased in this configuration, the spindle 120 is constructed such that only a component for transmitting the pneumatic pressure and the rotational driving force is provided inside the spindle 120, as disclosed in Korean Patent Registration No. 10-1188540 , And it is more preferable to move by an external driving force and receive power from the outside.

That is, each of the spindles 120 includes a polishing head 121 holding the substrate 55, a rotary union pressing the substrate 55 in the direction of the surface of the substrate 55 while allowing the rotation of the substrate 55, A driven shaft 124 having a hollow portion for receiving a rotational driving force from the driven shaft 124, power transmission elements composed of shafts, gears, etc. for transmitting a rotational driving force transmitted to the driven shaft 124, And a driven gear provided on the rotating shaft of the polishing head 121 for rotationally driving the polishing head 121 by a rotational driving force.

The spindle 127 has rollers 127 rotatably installed on both sides of the body 22 of the spindle 120 so that the spindle 127 can move along the upper surface of the guide rail 130R. A permanent magnet strip having N pole permanent magnets and S pole permanent magnets alternately arranged to control the current of the coils disposed above the movement path of the spindle 120, (130R).

Here, a soundproof rail of rubber material may be attached to the guide rail 130R on which the rollers 127 of the spindle 120 contact, in order to realize more smooth movement. The rotary union is configured similar to that shown in Korean Patent Publication No. 2004-75114.

3, when the spindle 120 is detected to reach a predetermined position, the docking unit 180 is docked on the spindle 120 to move the substrate 55 The rotary driving force for rotary driving and the pneumatic pressure required for the rotary union are supplied. To this end, the docking unit 180 includes a docking motor 181 that approaches the spindle 120 to dock or move away from the docking state, a lead screw 182 that is rotated by the docking motor 181, A moving block 183 having a female threaded portion engaged with the lead screw 182 and moving in a direction indicated by reference numeral 185d according to the rotation of the lead screw 182 so as to be prevented from rotating, A rotation driving motor 185 fixed to the supporting body 184 to generate a rotational driving force and a pair of rotatable driving motors 185 rotating together with the rotation of the rotational driving motor 185. [ And a plurality of pneumatic connectors 187 connected to move with the support body 184 to transmit pneumatic pressure to the rotary union 123 of the spindle 120 through the pneumatic supply pipe 187a.

When the substrate 55 mounted on the spindle 120 reaches a predetermined first position above the polishing table 110, the polishing table 110 moves upward to move the polishing pad of the polishing table 110 to the substrate 55 ) Are in contact with each other.

When the docking motor 181 of the docking unit 180 rotates in the forward direction, the movable block 183 whose rotation is restricted by the rotation of the lead screw 182 moves toward the spindle 120, The support shaft 183 and the rotary drive motor 185 and the coupling shaft 186 coupled thereto move along the spindle 120 together and the coupling shaft 186 moves along the driven hollow shaft 186, And the pneumatic connector 187 becomes a docked state to be fitted in the pneumatic receiving port of the spindle.

Here, on the outer circumferential surface of the coupling shaft 186, approximately six to twelve permanent magnet strips alternately formed by the N pole permanent magnet and the S pole permanent magnet are arranged so as to be attached, and the hollow shaft is rotatably supported by the bearing 124b Approximately six to twelve permanent magnet strips 124s each having alternate N pole permanent magnet and S pole permanent magnet are arranged on the inner peripheral surface of the driven shaft 124 to be supported. When the coupling shaft 186 rotates, due to the interaction of the permanent magnets arranged on the inner peripheral surface of the hollow portion of the driven shaft 124 and the permanent magnets arranged on the outer peripheral surface of the coupling shaft 186, The rotational driving force is transmitted from the coupling shaft 186 of the driven shaft 180 to the driven shaft 124 and is rotated together in the same direction. That is, a coupling shaft 186 having an N pole permanent magnet and an S pole permanent magnet alternately arranged on an outer circumferential surface thereof, and a driven shaft 124 having an N pole permanent magnet and an S pole permanent magnet alternately arranged on an inner peripheral surface thereof, The rotational driving force generated by the rotational driving motor 185 is transmitted to the spindle 120 while constituting the magnetic coupling.

By using the magnetic couplings 124 and 186 in transmitting the rotational driving force of the rotary drive motor 185 to the spindle 120 as described above, the spindle 120 does not strictly coincide with the predetermined position, The rotational driving force is transmitted through the magnetic couplings 124 and 186 of the non-contact type.

However, in order for the pneumatic connector 187 of the docking unit 180 to fit into the pneumatic receiving port of the spindle 120, the position and posture of the spindle 120 must be maintained in a precisely prescribed form. To this end, when the spindle 120 reaches a predetermined first position above the polishing platen 110, the position fixing unit 190 adjusts the position and attitude of the spindle 120 to a predetermined shape.

That is, the posture fixing unit 190 is in close contact with the upper surface of the spindle 120 to restrict the spin rotation 88 while limiting the displacement of the spindle 120 in the vertical direction. The posture fixing unit 190 includes a moving block 191 moving in the vertical direction, a driving unit 192 moving the moving block 191 in the vertical direction, And a restraining member 193 protruding in the form of a protrusion.

4 and 5, the moving block 191 reciprocates in the direction of approaching or moving away from the upper surface of the spindle 120, and two pieces of the moving block 191 are spaced apart from each other on the upper surface of the spindle 120 . Here, the driving unit 192 that reciprocates the moving block 191 in the vertical direction can use various known types of motive power.

For example, the driving unit 192 may reciprocate the moving block 191 by pneumatic pressure, or may vertically reciprocate the moving block 191 on the principle of a lead screw or a linear motor by using a power source . In the figure, a coil is provided in a drive unit 192, and a movable block 191 (hereinafter, referred to as " permanent magnet ") in which permanent magnets (not shown) are alternately mounted is driven by the principle of a linear motor, ) Is reciprocated in the up and down direction. The upper and lower positions of the moving block 191 can be precisely controlled as the moving block 191 is controlled by the principle of the linear motor.

Two pin-shaped restricting members 193 are formed on the bottom surface of the moving block 191 so as to protrude downward. 4, the restricting member 193 is movable from the first restricting member 193a and the first restricting member 193a disposed in the front surface of the bottom surface of each of the moving blocks 191 to the moving direction of the spindle And a second restraining member 193b disposed at the rear portion of the bottom surface spaced apart from the second restraining member 193b. Therefore, the posture fixing unit 190 restricts the upper surface of the spindle 120 at four points that are spaced apart from each other in the front, rear, left, and right directions. A receiving groove 123x as a receiving portion for receiving the holding member 193 of the attitude fixing portion 190 is formed on the upper surface of the body 122 of the spindle 120 at the same position as the arrangement interval of the holding member 193 Lt; / RTI >

As shown in the figure, a tapered inclined surface is formed at the tip of the pin-shaped restraining member 193, and a corresponding tapered inclined surface is formed in the receiving groove 123x of the spindle 120 as well.

Thus, even when the pin-shaped restricting member 193 is not accurately aligned with the receiving groove 123x because the spindle 120 is not accurately positioned at the first position above the polishing platen 110, The restricting member 193 can be inserted into the receiving groove 123x by moving the moving block 191 downward by the drive unit 192 by the drive unit 192 and the restricting member 193 can be inserted into the receiving groove 123x As the depth of insertion of the restricting member 193 and the receiving groove 123x becomes larger, the restricting member 193 (or the restricting member) can be guided to the first position, while the spindle 120 is finely moved, 193 and the receiving groove 123x can be strengthened.

When the position of the spindle 120 is restricted by the attitude fixing unit 190 in the first position and the roller 127 of the spindle 120 is brought into close contact with the upper surface of the guide rail 130R The docking unit 180 approaches the spindle 120 so that the coupling shaft 186 and the pneumatic connector 187 can be accurately docked to the spindle 120. [

Thus, the spindle 120 is subjected to the vibration in the vertical direction and the friction between the polishing pad 111 and the polishing pad 111 while the substrate 55 mounted on the lower side of the spindle 120 is in contact with the polishing pad 111 The vertical displacement and the spin rotation (rotation in the yawing direction) are suppressed by the posture fixing unit 190 even if the spin rotation moment 88 by the spindle 120 is transmitted to the spindle 120, So that the polishing process can be performed in a state in which the substrate 55 stably contacts the polishing pad 111 of the polishing platen 110.

Since the position of the spindle 120 is accurately located at the first position that the chemical mechanical polishing process is supposed to be performed by the position fixing unit 190 and at the same time the vertical height is specified by the predetermined height, So that docking can be smoothly performed.

While the present invention has been particularly shown and described with reference to exemplary embodiments thereof, it is to be understood that the invention is not limited to the disclosed embodiments, but, on the contrary, is intended to cover various modifications and equivalent arrangements included within the spirit and scope of the invention.

100: Chemical mechanical polishing system 110: Polishing plate
120: Spindle 123x:
130: circulation path 180: docking unit
190: upper surface fixing unit 193:

Claims (3)

A plurality of receiving grooves having a tapered inclined surface on an upper surface thereof are supported and supported by guide rollers that rotate along guide rails disposed on both sides in a state where the substrate is mounted on the upper surface of the guide rail, A spindle in which the guide rollers are installed and moves to reach a first position where a polishing platen on which a chemical mechanical polishing process is performed is located;
A pin-shaped restraining member protruding downward from the bottom surface and having a plurality of moving blocks movable in the up-and-down direction, wherein the restraining member includes a first restraining member disposed on each bottom surface of the moving block, And a second restricting member disposed at a position spaced apart from the guide roller in a moving direction along the guide roller, the first and second restricting members being inserted into the receiving recesses, And the inclined surfaces corresponding to the inclined surfaces of the receiving recesses are formed in the first and second restricting members, so that the first and second restricting members and the second The greater the depth of insertion of the restricting member into the receiving groove, the more firmly the degree of engagement of the first and second restricting members with the receiving groove To the position fixing portion for fixing the position of the spindle;
Wherein the chemical mechanical polishing system comprises a chemical mechanical polishing system.
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KR1020150091852A 2015-06-29 2015-06-29 Chemical mechanical polishing system with movable spindle KR101624837B1 (en)

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Application Number Priority Date Filing Date Title
KR1020150091852A KR101624837B1 (en) 2015-06-29 2015-06-29 Chemical mechanical polishing system with movable spindle

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KR101624837B1 true KR101624837B1 (en) 2016-05-26

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Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008078673A (en) 1995-10-27 2008-04-03 Applied Materials Inc Device and method for polishing

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008078673A (en) 1995-10-27 2008-04-03 Applied Materials Inc Device and method for polishing

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