KR101624837B1 - Chemical mechanical polishing system with movable spindle - Google Patents
Chemical mechanical polishing system with movable spindle Download PDFInfo
- Publication number
- KR101624837B1 KR101624837B1 KR1020150091852A KR20150091852A KR101624837B1 KR 101624837 B1 KR101624837 B1 KR 101624837B1 KR 1020150091852 A KR1020150091852 A KR 1020150091852A KR 20150091852 A KR20150091852 A KR 20150091852A KR 101624837 B1 KR101624837 B1 KR 101624837B1
- Authority
- KR
- South Korea
- Prior art keywords
- spindle
- polishing
- chemical mechanical
- substrate
- mechanical polishing
- Prior art date
Links
- 238000005498 polishing Methods 0.000 title claims abstract description 92
- 239000000126 substance Substances 0.000 title claims abstract description 34
- 239000000758 substrate Substances 0.000 claims abstract description 47
- 238000007517 polishing process Methods 0.000 claims abstract description 26
- 230000000452 restraining effect Effects 0.000 claims description 9
- 238000003780 insertion Methods 0.000 claims description 2
- 230000037431 insertion Effects 0.000 claims description 2
- 238000006073 displacement reaction Methods 0.000 abstract description 6
- 238000000034 method Methods 0.000 abstract description 5
- 230000008569 process Effects 0.000 abstract description 3
- 238000003032 molecular docking Methods 0.000 description 21
- 230000008878 coupling Effects 0.000 description 15
- 238000010168 coupling process Methods 0.000 description 15
- 238000005859 coupling reaction Methods 0.000 description 15
- 239000002002 slurry Substances 0.000 description 14
- 230000033001 locomotion Effects 0.000 description 8
- 238000003825 pressing Methods 0.000 description 6
- 230000002093 peripheral effect Effects 0.000 description 4
- 238000013459 approach Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 230000005540 biological transmission Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000003993 interaction Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 239000007779 soft material Substances 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02002—Preparing wafers
- H01L21/02005—Preparing bulk and homogeneous wafers
- H01L21/02008—Multistep processes
- H01L21/0201—Specific process step
- H01L21/02024—Mirror polishing
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
Abstract
Description
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a chemical mechanical polishing system, and more particularly, to a chemical mechanical polishing system, in which a spindle on which a substrate is mounted is stopped on a polishing table while moving in a predetermined path, And more particularly, to a chemical mechanical polishing system that stably maintains the posture of the spindle even when rotating.
BACKGROUND ART Generally, a chemical mechanical polishing (CMP) process is known as a standard process for polishing a surface of a substrate by relatively rotating between a substrate such as a wafer for manufacturing a semiconductor provided with a polishing layer and a polishing table.
The chemical mechanical polishing system is configured to rotate the
In recent years, in order to more precisely and efficiently polish the
1 is a carrier moving unit that moves along a
2, the
When the
However, in order for the
In addition, in the chemical mechanical polishing process, the
4A, a recess 29 is formed in the upper surface of the
However, even if the position of the
SUMMARY OF THE INVENTION The present invention has been made in order to solve the above-mentioned problems, and it is an object of the present invention to provide a polishing apparatus and a polishing apparatus, And the connector and the rotary shaft for supplying the air pressure can be docked reliably and smoothly.
The present invention also aims to keep the spindle constant and stable in spite of the friction caused by the relative rotation of the polishing pad and the substrate during the chemical mechanical polishing process.
That is, even if the spindle is subjected to a chemical mechanical polishing process in a movable state, it is possible to prevent the posture of the spindle from fluctuating due to the frictional force transmitted from the wafer during the chemical mechanical polishing process, The purpose is to carry out.
In order to achieve the above-mentioned object, the present invention provides a polishing apparatus comprising: a spindle installed to move along a guide rail in a state where a substrate is mounted and move to reach a first position where a polishing platen on which a chemical mechanical polishing process is performed is located; ; And a pin-type restraining member inserted into a receiving groove formed on an upper surface of the spindle when the spindle reaches the first position; The present invention also provides a chemical mechanical polishing system comprising:
This is because, when the spindle moves along the guide rail and reaches a predetermined position on the upper side of the polishing platen, the posture fixing portion suppresses the displacement of the substrate carrier in the vertical direction and the horizontal spin rotation so that the displacement of the spindle is restrained, In order to ensure that it is maintained.
Accordingly, as the substrate is relatively rotated while being pressed against the polishing platen, the spindle mounting the substrate is subjected to a reaction force to rotate to one side, causing a posture to be changed. The posture fixing portion connected to the frame moves the spindle Is fixed firmly so as not to be tilted from a predetermined posture so that a phenomenon in which the posture is tilted on one side even in the case of relative rotation in contact with the polishing platen during the polishing process is restrained and the polishing process with reduced swinging and slipping phenomenon can be performed do.
Here, the confining member and the accommodating portion are each formed of two or more pieces on one surface of the spindle.
At this time, the distal end portion of the pin-shaped restraint member is formed with a tapered inclined surface so that even when the pin-shaped restraint member is not perfectly aligned with the receiving recess, the restraint member is inserted into the receiving recess, And at the same time, as the fitting depth of the restricting member and the accommodating portion increases, the degree of engagement between the restricting member and the accommodating portion can be guided to become firm.
The contents disclosed in Korean Patent Registration No. 10-1188540 filed by the present applicant and patented are incorporated herein by reference.
As described above, according to the present invention, as the spindle moves freely and independently along the guide rails, it is inevitably an unstable posture in which the swinging is generated during the polishing process in which relative rotation is performed while being in contact with the polishing platen in one place. By restraining the movement of the substrate carrier by the fixing portion, it is possible to obtain an advantageous effect that the rotational displacement of the spindle can be originally restrained and can be firmly maintained in a predetermined posture.
Thus, according to the present invention, a polishing process is performed in a state in which the substrate is in stable contact with the polishing pad of the polishing platen while restricting the phenomenon that the polishing pad is in contact with the polishing platen during relative rotation, It is possible to obtain the effect of performing the polishing process in which the swinging motion and the slip phenomenon are reduced.
BRIEF DESCRIPTION OF THE DRAWINGS Fig. 1 is a schematic diagram showing the arrangement of a chemical mechanical polishing system,
Fig. 2 shows a configuration in which the spindle of Fig. 1 moves along a guide rail, Fig.
3 is a cross-sectional view taken along line III-III in Fig. 2,
FIG. 4 is a perspective view showing a configuration of a spindle and an attitude fixing unit of a chemical mechanical polishing system according to an embodiment of the present invention,
Fig. 5 is a front view of Fig. 4,
6 is an enlarged view of a portion 'A' in FIG. 4,
FIGS. 7A and 7B are enlarged views of a portion 'B' in FIG. 5,
Figs. 8A and 8B are views for explaining the principle of fixing the attitude of the spindle by the attitude fixing portion of Fig. 4;
Hereinafter, a chemical mechanical polishing system 100 according to an embodiment of the present invention will be described in detail with reference to the accompanying drawings. In the following description, well-known functions or constructions are not described in detail to avoid obscuring the subject matter of the present invention.
FIG. 4 is a perspective view showing a configuration of a spindle and a posture fixing part of a chemical mechanical polishing system according to an embodiment of the present invention, FIG. 5 is a front view of FIG. 4, and FIG. 6 is an enlarged view And FIGS. 7A and 7B are enlarged views of the portion 'B' of FIG. 5 to explain the operation principle of the attitude fixing portion. FIGS. 8A and 8B are views for explaining the principle of fixing the attitude of the spindle by the attitude fixing portion of FIG. Fig.
As shown in the drawing, a chemical mechanical polishing system 100 according to an embodiment of the present invention includes a plurality of polishing platens 110 (hereinafter, referred to as " polishing " A
The polishing table 110 is fixed to the
When the slurry is supplied from the
The
The
The
For example, the
However, since the weight of the
That is, each of the
The
Here, a soundproof rail of rubber material may be attached to the
3, when the
When the
When the
Here, on the outer circumferential surface of the
By using the
However, in order for the
That is, the
4 and 5, the moving
For example, the driving
Two pin-shaped restricting
As shown in the figure, a tapered inclined surface is formed at the tip of the pin-shaped
Thus, even when the pin-shaped restricting
When the position of the
Thus, the
Since the position of the
While the present invention has been particularly shown and described with reference to exemplary embodiments thereof, it is to be understood that the invention is not limited to the disclosed embodiments, but, on the contrary, is intended to cover various modifications and equivalent arrangements included within the spirit and scope of the invention.
100: Chemical mechanical polishing system 110: Polishing plate
120:
130: circulation path 180: docking unit
190: upper surface fixing unit 193:
Claims (3)
A pin-shaped restraining member protruding downward from the bottom surface and having a plurality of moving blocks movable in the up-and-down direction, wherein the restraining member includes a first restraining member disposed on each bottom surface of the moving block, And a second restricting member disposed at a position spaced apart from the guide roller in a moving direction along the guide roller, the first and second restricting members being inserted into the receiving recesses, And the inclined surfaces corresponding to the inclined surfaces of the receiving recesses are formed in the first and second restricting members, so that the first and second restricting members and the second The greater the depth of insertion of the restricting member into the receiving groove, the more firmly the degree of engagement of the first and second restricting members with the receiving groove To the position fixing portion for fixing the position of the spindle;
Wherein the chemical mechanical polishing system comprises a chemical mechanical polishing system.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020150091852A KR101624837B1 (en) | 2015-06-29 | 2015-06-29 | Chemical mechanical polishing system with movable spindle |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020150091852A KR101624837B1 (en) | 2015-06-29 | 2015-06-29 | Chemical mechanical polishing system with movable spindle |
Publications (1)
Publication Number | Publication Date |
---|---|
KR101624837B1 true KR101624837B1 (en) | 2016-05-26 |
Family
ID=56104899
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1020150091852A KR101624837B1 (en) | 2015-06-29 | 2015-06-29 | Chemical mechanical polishing system with movable spindle |
Country Status (1)
Country | Link |
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KR (1) | KR101624837B1 (en) |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2008078673A (en) | 1995-10-27 | 2008-04-03 | Applied Materials Inc | Device and method for polishing |
-
2015
- 2015-06-29 KR KR1020150091852A patent/KR101624837B1/en active IP Right Grant
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2008078673A (en) | 1995-10-27 | 2008-04-03 | Applied Materials Inc | Device and method for polishing |
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