KR101617135B1 - Coil component and manufacturing method thereof - Google Patents

Abstract

The present invention relates to a coil component, and a method for manufacturing the same. The coil component according to an embodiment of the present invention includes a substrate; a buffer layer provided on one surface of the substrate; an insulating part laminated on the buffer layer and including at least one insulating layer; and a coil part provided in the interior of the insulating layer and including at least one metallic layer electrically connected to the outside to form an electromagnetic field, wherein the insulating layer includes a second via hole for exposing a portion of the metallic layer to the outside, and further includes an electrode formed in the interior of the second via hole and laminated on the metallic layer. The electrode is laminated on the metallic layer after the metallic layer is laminated and before the insulation layer is laminated, or laminated on the metallic layer located in the interior of the second via hole after the second via hole is formed, and the coil part may be electrically connected to an external terminal by bringing the external terminal into contact with the electrode.

Description

BACKGROUND OF THE INVENTION 1. Field of the Invention [0001] The present invention relates to a coil component,

The present invention relates to a coil component and a manufacturing method thereof.

Unlike a permanent magnet, which is difficult to control a magnetic field, an electromagnetic coil is widely used in various devices such as a motor, a generator, and an electromagnetic actuator because the magnetic field generated inside the coil can be easily controlled by controlling the current input to the coil. In particular, an apparatus for generating various mechanical movements of a device by using a magnetic field, such as an electromagnetic actuator, is generally provided with a plurality of electromagnetic coil parts because various types of magnetic field generation are required.

On the other hand, recently, electronic devices are becoming smaller and smaller, and a device capable of precise control with a small size is required.

For example, recently, a camera module capable of adjusting autofocus (AF) and capable of OIS (Optical Image Stabilizer) has been developed. When such a camera module enters a mobile device such as a mobile phone, miniaturization of the camera module is indispensable. To this end, a method for controlling an imaging unit or a lens using an electromagnetic actuator including an electromagnetic coil part and a magnet has been proposed in recent mobile camera modules.

In addition, recently, a shooting technique using an unmanned airplane such as a drone is popular. In the case of a camera module mounted on the camera module, the weight and size of the unmanned airplane are required to be reduced in weight and size. In addition, it is required to compensate for the vibration and sudden movement of the UAV to obtain images.

In addition, in the field of automobiles, a camera module used for implementing a lane departure prevention system, a headway distance securing system, and an unmanned traveling system is also required to be light in weight and small in size.

In addition, there is a demand for an electromagnetic actuator that can be precisely controlled while accurately measuring a state of a patient and being compact in a medical device for correcting the condition.

In recent years, there has been a growing demand for an electromagnetic actuator that can be precisely controlled with miniaturization. However, it is difficult to achieve both of the above two purposes with conventional coil parts.

Specifically, as a coil part of an electromagnetic actuator used in a conventional electromagnetic actuator, in particular, an auto focus adjustment device of a camera module or an image stabilization device, a general coil formed by winding a wire has been used. In the case of such a general coil, it is difficult to form a fine coil pattern and it is difficult to finely control the electromagnetic field. Further, in order to mount the wound coil component, a space of a predetermined size or more is required, which limits the miniaturization of the electromagnetic actuator. As a result, it is difficult to realize an ultra-small camera module.

In addition, the electromagnetic actuator can be used in various vibrations, shocks, heat, and the like, and it is difficult to provide a coil component that is structurally stable while being miniaturized.

Patent Document: Korean Patent Laid-Open No. 10-2014-0076329 (published on June 20, 2014)

Embodiments of the present invention have been proposed in order to solve the above problems, and it is an object of the present invention to provide a coil component having excellent structural stability and a manufacturing method thereof.

It is also intended to provide a coil component capable of precise electromagnetic field control and a manufacturing method thereof.

It is also intended to provide an excellent coil component capable of miniaturization and a manufacturing method thereof.

Further, there is a need to provide a coil component with low power consumption and a manufacturing method thereof.

Further, there is provided a coil component having improved productivity and a manufacturing method thereof.

A coil component according to an embodiment of the present invention includes: a substrate; A buffer layer provided on one surface of the substrate; An insulating layer stacked on the buffer layer and including at least one insulating layer; And a coil portion provided inside the insulating layer and including at least one metal layer electrically connected to the outside to form an electromagnetic field, the insulating layer including a second via hole for exposing a part of the metal layer to the outside And an electrode formed inside the second via hole and stacked on the metal layer, wherein the electrode is stacked on the metal layer before the insulating layer is stacked after the metal layer is stacked, The via hole may be formed on the metal layer located inside the second via hole after the formation of the via hole, and the coil portion may be electrically connected to the external terminal by contacting the external terminal with the electrode.

A method of manufacturing a coil component according to an embodiment of the present invention includes: preparing a substrate; Providing a buffer layer on one side of the substrate; Forming a metal layer having a predetermined pattern for forming an electromagnetic field on one side of the buffer layer; Laminating an insulating layer covering the metal layer; Forming a second via hole exposing a portion of the uppermost metal layer on the upper surface of the uppermost insulating layer; And forming an electrode to be laminated on an upper surface of the uppermost metal layer, wherein the step of forming the metal layer and the step of laminating the insulating layer are performed at least once, and the step of forming the metal layer is performed twice The metal layer is laminated on the previously formed insulating layer and the electrode is laminated on the uppermost metal layer before the uppermost insulating layer is laminated after the uppermost metal layer is laminated, And then stacked on the uppermost metal layer located inside the second via hole.

According to the embodiments of the present invention, a coil component having excellent structural stability and a method of manufacturing the coil component can be provided.

In addition, a coil component capable of precise electromagnetic field control and a manufacturing method thereof can be provided.

In addition, a miniaturized coil part and a manufacturing method thereof can be provided.

In addition, a coil part with low power consumption and a manufacturing method thereof can be provided.

Further, a coil part with improved productivity and a method of manufacturing the same can be provided.

1 is a perspective view of a coil component according to an embodiment of the present invention.
2 is a sectional view taken along the line AA in Fig.
3 is an exploded perspective view of the coil component of Fig.
4 is a cross-sectional view of a coil component according to another embodiment of the present invention.
5 is a cross-sectional view of a coil component according to another embodiment of the present invention.
6 is a cross-sectional view of a coil component according to another embodiment of the present invention.
7A to 7N are views for explaining a method of manufacturing a coil component according to an embodiment of the present invention.

Hereinafter, specific embodiments of the present invention will be described in detail with reference to the drawings.

In the following description of the present invention, detailed description of known functions and configurations incorporated herein will be omitted when it may make the subject matter of the present invention rather unclear.

In addition, the components of the drawings are not necessarily drawn to scale; for example, the dimensions of some of the components of the drawings may be exaggerated relative to other components to facilitate understanding of the present invention. In the meantime, like reference numerals denote like elements throughout the drawings, and detailed descriptions of known features and techniques that are unnecessary for the discussion of the illustrated embodiments of the present invention may be omitted for simplicity and clarity of illustration.

FIG. 1 is a perspective view of a coil component according to an embodiment of the present invention, and FIG. 2 is a sectional view taken along line A-A 'of FIG. 3 is an exploded perspective view of the coil component of Fig.

1 to 3, the coil component 10 of the present embodiment includes a substrate 110, a buffer layer 120 provided on one surface of the substrate 110, And a coil part 300 provided inside the insulating part 200 and generating a magnetic field.

The insulating layer 200 includes a first insulating layer 210 stacked on the buffer layer 120 and a second insulating layer 220 provided on the side opposite to the substrate 110 of the first insulating layer 210. [ . ≪ / RTI > The coil part 300 may include a first metal layer 310 embedded in the first insulating layer 210 and a second metal layer 320 embedded in the second insulating layer 220.

The substrate 110 may be made of a material such as silicon or glass. The thickness of the substrate 110 can be thinned by a back grinding process or the like performed after the manufacturing process of the coil component 10 is completed. For example, the substrate 110 may have a thickness of 50 mu m or more and 200 mu m or less. As will be described later, since the buffer layer 120 is provided on one surface of the substrate 110 in the present embodiment, the thickness of the substrate 110 can be reduced even when the substrate 110 is provided with a hard material such as silicon or glass. For example, the thickness of the coil part 10 in which the insulating part 200 and the coil part 300 are stacked may be 200 μm or more and 300 μm or less.

A buffer layer 120 may be provided on one side of the substrate 110 to absorb various stresses exerted by the insulating portion 200 and the coil portion 300. For example, the buffer layer 120 may be an insulator formed of a non-metal, and may be a synthetic resin. In particular, the buffer layer 120 may be formed of at least one of an epoxy resin, a polyimide resin, and a synthetic resin. In this embodiment, examples of the material of the buffer layer 120 include an epoxy resin, a polyimide resin, a synthetic resin, and the like, but these are limited to materials.

In the case where the buffer layer 120 is formed of a material having the predetermined elasticity and restoring force, the substrate 110 can be sufficiently absorbed by the load while preventing cracks, breakage, and warping of the substrate 110. Particularly, when the buffer layer 120 is provided as an epoxy or a polyimide, since the heat resistance is high, the substrate 110 can be prevented from being deformed in a subsequent process and a heat treatment process. The buffer layer 120 also alleviates the problem of separating the metal layer 310 that may be generated due to adhesion of the thick metal layer 310 to the seed layer 710 only when the metal layer 310 is deposited on the substrate 110 .

The buffer layer 120 may be provided on one side of the substrate 110 by a method in which the buffer layer 120 is applied in liquid form to the substrate 110 and cured or attached to the substrate 110 in the form of a film, May be a few nanometers. For example, the thickness of the buffer layer 120 may be 1 μm or more and 100 μm or less, preferably 3 μm or more and 10 μm or less.

Here, when the buffer layer 120 is applied in a liquid form and cured, since the buffer layer 120 can be formed by a series of processes together with the step of laminating the insulating part 200 and the coil part 300, the whole process is simplified The manufacturing cost can be reduced and the buffer layer 120 can be strongly adhered to the substrate 110, so that the risk of adhesion failure of the buffer layer 120 is small.

In addition, the buffer layer 120 may be provided with a seed layer 710 to be described later, or may be provided with a metal layer formed on a thin film.

The buffer layer 120 thus formed absorbs various types of loads applied from the insulating part 200 and the coil part 300 to protect the substrate 110.

Specifically, since the substrate 110 and the coil part 300, which is a metal layer stacked thereon, have different thermal expansion coefficients, when the coil part 300 generates heat due to the use of the coil part 10, 300 and the deformation amount of the substrate 110 may be different. In this embodiment, since the buffer layer 120 can absorb such a difference in deformation amount, the problem that the coil part 300 is separated from the substrate 110 or the substrate 110 is broken can be prevented.

When the metal layer 310 is directly formed on the substrate 110, the adhesion between the metal layer 310 and the substrate 110 may be weakened. Since the buffer layer 120 is provided as an intermediate medium, The state of being formed on the substrate 110 can be firmly maintained.

When the insulating part 200 and the coil part 300 stacked on the substrate 110 are complicated or thickened, the weight of the insulating part 200 and the coil part 300 increases, However, since the buffer layer 120 absorbs the first buffer layer 120 and transmits the buffer layer 120 to the substrate 110, it is possible to prevent the substrate 110 from being deformed or cracked.

Particularly, it is preferable that the substrate 110 is formed to have a small thickness for miniaturization of parts. For this purpose, it is required that the substrate 110 is formed thin. In this embodiment, since the buffer layer 120 capable of absorbing various loads is provided on one surface of the substrate 110, the substrate 110 may be deformed or damaged Can be prevented.

As a result, the structural stability of the substrate 110 can be improved by the buffer layer 120, and the structural stability of the coil component 10 can be ensured even if the substrate 110 is formed thin.

The insulating layer 200 may be laminated on one surface of the buffer layer 120 and the coil layer 300 may be embedded in the insulating layer 200. The insulating layer 200 may include a first insulating layer 210 stacked on the substrate 110 and a second insulating layer 220 provided on the opposite side of the first insulating layer 210 A first metal layer 310 and a second metal layer 320, which form the coil part 300, may be formed in the respective layers. In this specification, the second insulating layer 220 and the second metal layer 320 may each be an insulating layer positioned on the uppermost layer and a part of the coiled part 300 embedded therein, An additional insulating layer (not shown) such as a third insulating layer may be formed between the first insulating layer 220 and the first insulating layer 210.

The insulating portion 200 functions to protect the coil portion 300 from impact, moisture, high temperature, etc., while giving insulation to the coil portion 300. Therefore, The material can be appropriately selected. For example, the insulating portion 200 may be formed of a thermosetting resin such as an epoxy resin, a phenol resin, a urethane resin, a silicone resin, or a polyimide resin and a thermoplastic resin such as a polycarbonate resin, an acrylic resin, a polyacetal resin, Lt; / RTI >

The coil portion 300 is a metal wire formed by a coil pattern of a predetermined shape, and forms an electromagnetic field. The coil part 300 may be formed through a process of electrolytic plating or electroless plating and may be formed of a metal such as silver (Ag), palladium (Pd), aluminum (Al), nickel (Ni) At least one material selected from the group consisting of titanium (Ti), gold (Au), copper (Cu), tungsten (W), titanium tungsten (TiW) and platinum (Pt) At this time, according to the step of forming the coil part 300, the coil part 300 can be formed on the seed film 710 of the metal. Here, the seed film 710 may be a metal film formed on the buffer layer 120, and the details thereof will be described later.

The coil pattern of the coil part 300 may be spiral, but it is not limited thereto and may be changed according to the required specification. Further, when the coil portion 300 is formed of a metal layer of multiple layers, the shape and size of the coil pattern of each layer may be different from each other. 3, the first metal layer 310 is formed in two spiral patterns separated from each other, and the second metal layer 320 is formed such that both ends of the second metal layer 320 are connected to the respective spiral patterns 310 of the first metal layer 310, And may be formed in a single spiral pattern electrically connected to the first electrode terminal.

The first metal layer 310 and the second metal layer 320 may include a first metal layer 310 and a second metal layer 320. The first metal layer 310 and the second metal layer 320 may include a first metal layer 310 and a second metal layer 320, The coil portion 300 can be formed in a multilayer of two or more layers by being formed in the insulating layer 210 and the second insulating layer 220. The number of turns of the coil part 300 can be increased within a limited space by configuring the coil part 300 with a metal layer of multiple layers.

Although only the coil part 300 composed of only the two layers of the first metal layer 310 and the second metal layer 320 is illustrated in the drawing, the coil part 300 may be composed of one layer or three or more layers as required It is possible. For example, a third insulating layer (not shown) may be stacked between the first insulating layer 210 and the second insulating layer 220, and a third metal layer (not shown) may be further formed on the third insulating layer . In this case, the third metal layer may be electrically connected to the first metal layer 310 and the second metal layer 320. For example, one end of the third metal layer may be in electrical contact with the first metal layer 310 and the other end may be in contact with the second metal layer 320. Of course, a plurality of insulating layers and metal layers may be provided between the first insulating layer 210 and the second insulating layer 220 in the same manner.

The metal layers of the multilayer constituting the coil part 300 can be separated from each other by the insulating part 200. At this time, the interlayer electrical connection of the multiple metal layers 310 and 320 may be performed through the first via hole 410 formed in the lower insulating layer. The first via hole 410 may be such that the upper surface of the insulating layer is recessed to expose a part of the metal layer formed therein. After the first via hole 410 is formed in the lower insulating layer, the upper metal layer and the upper insulating layer are stacked on the upper surface of the first via hole 410, so that the multilayer coil portion 300 can be formed. In this embodiment, the diameter of the first via hole 410 may be smaller than the width of the coil pattern of the first metal layer 310, as shown in FIG.

For example, the first via hole 410 may be formed on the upper surface of the first insulating layer 210. The metal layer stacked on the first metal layer 310 exposed through the first via hole 410 may be in contact with the first metal layer 310 so that the first metal layer 310 contacts the coil part 300 including the second metal layer 320 As shown in FIG. In FIG. 2, a second insulating layer 220 is stacked on the first insulating layer 210, and a second metal layer 320 is directly in contact with the first metal layer 310. As described above, the two metal layers stacked up and down can be electrically connected through the first via hole 410 formed on the upper surface of the lower insulating layer.

According to this embodiment, the coil part 10 can be miniaturized stably while using a rigid material such as a glass substrate or a silicon wafer. In the case of forming a substrate using a glass substrate or a silicon wafer, if the insulating portion 200 and the coil portion 300 are stacked on the upper portion, a problem that the substrate is bent or broken may occur, It is difficult to manufacture the component 10, but the above problem can be effectively prevented when the buffer layer 120 is added to the substrate 110 as in the present embodiment.

In addition, since the coil component 10 can be downsized, the space required for mounting the coil component 10 can be reduced, and miniaturization of an electromagnetic actuator or the like can be made possible. Furthermore, by forming the coil portion by using the plated metal film of the multilayer structure instead of the wound wire, it is easy to form the fine coil pattern and the ability to realize the coil pattern is excellent, the design conditions can be precisely satisfied, Coil parts can be provided.

In addition, since the magnetic field can be formed by flowing current to the coil portion 300 directly without additional power loss, power consumption can be reduced.

Meanwhile, the coil portion 300 may be electrically connected to an external terminal (not shown) to receive an external voltage. The external terminal may include a configuration capable of applying a voltage to the coil part 300 such as a wire connected to the power source or a contact terminal of another electronic part. When an external voltage is applied to the coil part 300 and current flows in the metal layer, an electromagnetic field can be formed.

Here, the electrical connection between the coil part 300 and the external terminal may be performed through the second via hole 420 formed in the uppermost insulating layer (the second insulating layer 220 in this embodiment). The external terminal may be electrically connected to the exposed metal layer through the second via hole 420. Here, the exposed metal layer may be the uppermost metal layer (the second metal layer 320 in the present embodiment) or may be a metal layer (the first metal layer 310 in this embodiment) formed below the uppermost metal layer. The external terminal may be in direct contact with a portion exposed through the second via hole 420 of the metal layer or may be in contact with the electrodes 510 and 520 formed in the second via hole 420 as described later, . Hereinafter, it is assumed that a part of the second metal layer 320 is exposed through the second via hole 420, but the spirit of the present invention is not limited to such a structure.

The first via hole 410 described above is formed between the insulating layer and the insulating layer stacked thereon for electrical connection between the metal layers of the coil portion 300 while the second via hole 420 ) Can be referred to as being formed in the uppermost insulating layer and exposing a part of the metal layer stacked below it. The shape of the second via hole 420 may be such that it penetrates the insulating layer, or the upper surface of the insulating layer may be recessed like the first via hole 410. In FIG. 2 and FIG. 4 described later, an example in which the second via hole 420 is formed through the uppermost insulating layer is shown. In FIG. 5 described later, the second via hole 420 is formed by recessing the upper surface of the uppermost insulating layer. An example is shown.

2, the second via hole 420 is formed through the second insulating layer 220 and may have a diameter larger than the width of the coil pattern of the second metal layer 320. In this embodiment, have. The diameter of the second via hole 420 may be larger than the diameter of the first via hole 410. As described above, the first via hole 410 may be a hole formed on the upper surface of the insulating layer stacked on the lower part of the second insulating layer 220 to expose the metal layer therein. In this case, a predetermined gap may be formed between the side surface of the second via hole 420 and the coil pattern of the second metal layer 320.

When the second via hole 420 is formed to penetrate through the second insulating layer 220 as described above, the upper surface of the second metal layer 320 exposed through the second via hole 420 is electrically connected to the second insulating layer 220 220). ≪ / RTI > That is, at least a part of the second metal layer 320 in the second via hole 420 may protrude above the second insulating layer 220. For example, a portion of the second metal layer 320 protruding from the second insulating layer 220 may be formed at a predetermined protruding portion formed around the first via hole 410 as the first via hole 410 is formed, The upper surface of the second metal layer 320 may be formed higher than the remaining portion of the second metal layer 320 in the second via hole 420 by stacking the metal layer 320. At this time, the thickness of the second metal layer 320 is formed to be substantially equal to the thickness of the first metal layer 310, and the thickness of the uppermost insulating layer, that is, the second insulating layer 220, The second metal layer 320 may be protruded from the second via hole 420 by forming the second metal layer 320 to be smaller than the thickness of the first insulating layer 210.

The second via hole 420 may be formed to have a predetermined gap between the side surface of the second via hole 420 and the coil pattern of the second metal layer 320, It can be relatively wide exposed. In addition, the second metal layer 320 may be formed on the second via hole 420 so as to protrude above the insulating layer around the second via hole 420. Therefore, the external terminal can be easily brought into direct contact with the exposed portion of the second metal layer 320. [ In this case, an additional step for forming the electrode or the like described later can be omitted, so that the productivity can be improved and the manufacturing cost can be reduced.

Although the coil part 300 is formed of a plurality of metal layers 310 and 320 and the insulating part 200 is formed of a plurality of insulating layers 210 and 220 in the present embodiment, The insulating layer 300 and the insulating layer 200 may be provided as a single layer. In this case, a single-layer insulating layer may be laminated on the buffer layer 120, and a metal layer may be provided inside the single-layer insulating layer. At this time, the second via hole may be formed in the single-layer insulating layer, and the metal layer provided in the single-layer insulating layer may be exposed to the outside through the second via hole. Here, the meaning of the metal layer being provided as a single layer can be understood to be that one continuous metal layer is formed in one insulating layer.

4 is a cross-sectional view of a coil component according to another embodiment of the present invention.

Referring to FIG. 4, the coil component 10 may further include an electrode 510 formed inside the second via hole 420 of the uppermost insulating layer and stacked on the upper surface of the metal layer formed in the second via hole 420. The electrode 510 may be a metal layer stacked on the second metal layer 320 immediately after the second metal layer 320 is stacked and may function as a means for electrically connecting the coil portion 300 and the external terminal. have.

For example, the second metal layer 320 may be formed by depositing a photosensitive material on top of the first insulating layer 210 and then depositing the openings formed by the photolithography process, And may be formed immediately after the second metal layer 320 in the opening where the metal layer 320 is formed.

At this time, the second via hole 420 may be formed through the uppermost insulating layer. That is, the electrode 510 may be formed in the second insulating layer 220 and may be laminated with the second metal layer 320, and may function as a means for electrically connecting the coil portion 300 and the external terminal .

For example, the electrode 510 can be protruded so that the upper surface of the electrode 510 is positioned higher than the upper surface of the uppermost insulating layer (the second insulating layer 220 in the present embodiment) Can be more easily contacted.

The electrode 510 may include a metal material having excellent electrical conductivity, and may be formed of a different kind of metal from the second metal layer 320. For example, the electrode 510 may be formed of a metal such as nickel (Ni), tin (Sn), silver (Ag), gold (Au), or an alloy thereof and may be formed by a process of electrolytic plating or electroless plating .

According to the present embodiment, since the electrode 510 is formed in the second via hole 420, the external electrode can be more stably contacted to the coil component. As a result, the electrical connection between the external electrode and the coil part can be stabilized and the electrical connection failure can be reduced.

Particularly, after the formation of the second insulating layer 220, the electrode 510 is not formed after the formation of the second insulating layer 220 but is formed immediately after the second metal layer 320 is formed, Can be omitted, so that the productivity of the coil component 10 including the electrode can be improved as well as the productivity can be increased.

Although the insulator 200 and the coil part 300 are formed as two layers and the electrode 510 is formed on the second metal layer 320 in the present embodiment, May be formed on the uppermost metal layer, irrespective of the number of layers of the insulating part 200 and the coil part 300, and may be formed continuously with the uppermost metal layer.

5 is a cross-sectional view of a coil component according to another embodiment of the present invention.

5, an electrode 520 is formed in the second via hole 420 of the coil component, and the second via hole 420 is formed in the uppermost insulating layer (the second insulating layer 220 in this embodiment) As shown in FIG. In this case, the diameter of the second via hole 420 may be smaller than the width of the coil pattern of the uppermost metal layer (the second metal layer 320 in this embodiment). Alternatively, the diameter of the second via hole 420 may be the same as the diameter of the first via hole 410 formed in the lower insulating layer.

The electrode 520 may include a metal material having excellent electrical conductivity. For example, as shown in FIG. 5, the electrode 520 may have a structure in which one or more metal layers are stacked on a metal pillar having a predetermined height. In the present embodiment, a structure in which one metal layer is stacked is described as an example, but the spirit of the present invention is not limited thereto.

For example, the electrode 520 may be formed of a metal such as tin (Sn), silver (Ag), gold (Au), or an alloy of these metals on the copper pillar 521 protruding from the upper surface of the second metal layer 320 The upper metal layer 523 may be sequentially stacked.

The electrode 520 may be formed through a process of electrolytic plating or electroless plating. According to the process of forming the electrode 520, the electrode 520 may be formed on the seed film 710 of the metal.

According to this embodiment, as the electrode is formed in the second via hole, the external electrode can be more stably contacted to the coil component. As a result, the electrical connection between the external electrode and the coil part can be stabilized and the electrical connection failure can be reduced.

According to this embodiment, since the second via hole 420 is also formed in a structure in which the upper surface of the insulating layer is recessed, the second via hole 420 can be formed more easily, and productivity can be improved. In addition, since the second insulating layer 220 covers the side surface of the second metal layer 320, the side surface of the second metal layer 320 can be easily protected within the second via hole 420. At the same time, by providing the electrode 520 inside the second via hole 420, stable electrical connection between the external electrode and the coil part can be realized.

4 and 5 illustrate that the electrodes 510 and 520 are formed in a pillar shape, the shapes of the electrodes 510 and 520 are not limited thereto. The shape of the electrodes 510, 520 may be other shapes, such as spheres, if desired. In particular, when the electrode is formed in the second via hole of the type shown in FIG. 5, the electrode may be formed in a sphere shape. To this end, after one or more metal layers for forming the electrodes are laminated, the laminated metal layers may be reflowed.

6 is a cross-sectional view of a coil component according to another embodiment of the present invention.

Fig. 6 differs from the embodiment disclosed in Fig. 5 in that a lower metal layer 522 is further provided between the copper pillar 521 and the upper metal layer 523. That is, the lower metal layer 522 may be stacked on the upper surface of the second metal layer 320, and the upper metal layer 523 may be stacked on the upper surface of the lower metal layer 522. Here, the lower metal layer 522 may be made of nickel (Ni), titanium (Ti), and / or titanium tungsten (TiW).

When the lower metal layer 522 is provided on the lower portion of the upper metal layer 523, the lower metal layer 522 catches the upper metal layer 523 when the upper metal layer 523 is bonded or after a predetermined heat treatment. The upper metal layer 523 can be prevented from flowing down. When the upper metal layer 523 is caused to flow down, a short circuit may be generated due to contact with other peripheral structures. This embodiment has an advantage that this problem can be effectively prevented.

5 and 6, the electrode 520 may be formed by directly laminating the lower metal layer 522 on the upper surface of the second metal layer 320 and the upper metal layer 523 on the upper surface thereof Lt; / RTI > Alternatively, a metal layer made of copper (Cu) is formed on the upper surface of the second metal layer 320 instead of the copper pillar 521, and a lower metal layer 522 and an upper metal layer 523 are sequentially stacked on the metal layer. It is possible. That is, the electrode 520 may be formed by stacking at least one of a copper pillar, a copper metal layer, an upper metal layer, and a lower metal layer on the upper surface of the second metal layer 320.

Hereinafter, an embodiment of a method for manufacturing the coil component described above with reference to Figs. 7A to 7N will be described.

FIGS. 7A to 7N are views for explaining an embodiment of a method of manufacturing a coil component according to the embodiment of FIG. 4, schematically showing each process step.

Referring to FIG. 7A, a buffer layer 120 is formed on one surface of a substrate 110 after preparing a substrate 110 having rigidity, which is provided by a material such as glass or silicon. Here, the buffer layer 120 may be provided on one side of the substrate 110 in such a manner that a liquid material is applied to the substrate 110 and then cured or adhered in a film form.

Referring to FIG. 7B, a seed layer 710 of metal may be formed on the upper surface of the buffer layer 120, that is, on the outermost surface of the coil component. At this time, the seed layer 710 may be formed by depositing metal on the buffer layer 110. For example, the seed film 710 may be formed on the substrate 110 through physical chemical vapor deposition (PVD), sputtering deposition, or E-Beam deposition. The thickness of the seed film 710 may be 0.01 탆 or more and 1 탆 or less.

Here, the seed layer 710 may have a structure in which one or two or more metal layers are stacked. For example, the lower metal layer directly stacked on the upper surface of the substrate 110 may be made of titanium (Ti) and / or titanium tungsten (TiW) as a barrier layer, adhesion layer may be made of copper (Cu) and / or nickel (Ni). The seed film 710 may serve as a base layer for plating metal layers, electrodes, etc. constituting the coil part.

Alternatively, the seed layer 710 may be provided in a state of being laminated on one surface of the buffer layer 120. In this case, the metal seed layer 710 is formed at the time of manufacturing the buffer layer 120, and the buffer layer 120 may be supplied with the seed layer 710 stacked on one surface. Alternatively, the seed film 710 may be formed in advance in the buffer layer 120 and supplied. For example, the buffer layer 120 may be provided in a film state in which a seed film 710 that is a metal layer is laminated on a polyimide, epoxy-based synthetic resin, and is attached to the substrate 110, The process can be completed.

When the seed layer 710 is provided on the buffer layer 120 as described above, the process can be simplified compared with the case of forming the seed layer 710 through a process such as evaporation. As a result, the productivity of the coil component 10 Can be improved.

Referring to FIG. 7C, a photosensitive material 720 may be applied to the top surface of the seed layer 710. Here, the photosensitive material 720 may be applied through a spin coating process. The photosensitive material 720 is used for a photolithography process and may be a material that undergoes a chemical reaction upon receiving light to change its properties.

Referring to FIG. 7D, an opening 71 having a predetermined pattern may be formed on the applied photosensitive material 720 through a photolithography process. Here, the predetermined pattern may be a pattern in which a metal layer constituting the coil part is formed. Specifically, a mask (not shown) having the predetermined pattern formed thereon may be attached to the photosensitive material 720, and the exposure process may be performed such that light is irradiated only to the portion where the coil is to be formed. Then, when the photosensitive material 720 of the light-receiving portion is removed using the developing solution, the opening 71 may be formed at a position where the metal layer of the coil portion is to be formed. Of course, in addition to the above-described positive method, a negative method of performing an exposure process so that light is irradiated only to the remaining portion except the portion where the opening 71 is to be formed may be used.

Referring to FIG. 7E, a metal layer 310 of a coil part may be formed on the upper surface of the seed layer 710 by electroplating metal on the opening 71 formed in FIG. 7D. The formed metal layer 310 may have the predetermined pattern. The metal to be electroplated may be silver (Ag), palladium (Pd), aluminum (Al), or the like, which is excellent in electrical conductivity and resistant to corrosion, May be any one or a mixture of at least two of nickel (Ni), titanium (Ti), gold (Au), copper (Cu) and platinum (Pt).

When the metal layer 310 of the coil part is formed as described above, the photosensitive material may be removed as shown in FIG. 7F. 7G, the seed film 710 may be etched according to the pattern of the metal layer 310 stacked on the top surface thereof. Specifically, the seed film 710 between two adjacent metal layer patterns 310 can be removed. In this step, an acid cleaning process for removing the oxide film formed on the upper surface of the metal layer 310 may be further performed.

Referring to FIG. 7H, the insulating layer 210 may be laminated on the upper surface of the substrate 110 so as to cover the metal layer 310 of the plated coil part. At this time, the insulating layer 210 may be applied to the upper surface of the substrate 110 by a spin coating process of a photolithography process. At this time, the thickness of the insulating layer 210 applied may be 0.1 mu m or more and 100 mu m or less.

Then, as shown in FIG. 7I, a process of forming a first via hole 410 on the upper surface of the insulating layer 210 may be performed. The process of forming the first via hole 410 in the insulating layer 210 may also be performed through a photolithography process. To this end, the insulating layer 210 may comprise a photosensitive material. Specifically, a mask (not shown) having a pattern of the first via hole 410 is attached on the insulating layer 210, and an exposure process can be performed. Accordingly, when light is irradiated to the remaining portion except for the portion where the first via hole 410 is to be formed, and the remaining portion excluding the light receiving portion is removed using the developing solution, the upper surface of the insulating layer 210 is exposed only to the corresponding portion Can be seth. Of course, in addition to such a negative method, a positive method may be used in which only a portion where a via hole is to be formed is irradiated with light, and then a light receiving portion is removed. As the insulating layer 210 is recessed, the metal layer 310 of the coil part embedded in the insulating layer 210 can be exposed and the metal layer 310 stacked on the exposed part can be contacted . That is, electrical connection can be made between the metal layers 310 of the coil part through the first via hole 410.

In this embodiment, after the upper surface of the insulating layer 210 is recessed as described above, a heat treatment process (curing) may proceed. Through the heat treatment process, the first via hole 410 formed by recessing the upper surface of the insulating layer 210 can be firmly fixed. The temperature and time of the heat treatment process can be set within a range that does not damage the buffer layer 120. [ For example, when the buffer layer 120 includes an epoxy resin, the heat treatment may be performed at a temperature of 100 to 400 at a temperature of 30 minutes to 8 hours.

At this time, as shown in FIG. 7I, the scum 411 of the insulating layer 210 may remain on the inner side of the first via hole 410. Referring to FIG. 7J, a dry etch process may be further performed around the first via hole 410 to remove the residue 411. The etching amount at this time may be 0.001 탆 or more and 5 탆 or less. The dry etching process may precede the above-described heat treatment process. The wet ability for plating to be followed by the dry etching process can also be improved.

7K, when the first via hole 410 is formed in the insulating layer 210 as described above, a seed layer 710 of a metal is formed on the upper surface of the insulating layer 210, that is, Can be stacked. The seed film 710 may also serve as a base layer for plating metal layers, electrodes, etc. constituting the coil part, and the specific structure and process may be the same as those described above.

A process in which a photosensitive material is applied on the seed film 710 and an opening of a coil pattern is formed; a process in which a metal material is plated on the opening to form a metal layer 320 of the coil part; A process in which the electrode 510 is laminated, a process in which the photosensitive material is removed, and a process in which the seed film 710 is etched in accordance with the pattern of the metal layer is performed again to form a stacked insulating layer A metal layer 320 of a coil part and an electrode 510 may be additionally stacked on top of the electrodes 210. [

The electrode 510 may be formed of a metal such as nickel (Ni), tin (Sn), silver (Ag), gold (Au), or an alloy thereof and may be formed by a process of electrolytic plating or electroless plating .

7M, an insulating layer 220 may be additionally formed on the upper surface of the insulating layer 210 stacked to cover the upper metal layer 320 and the electrode 510. In this case,

As described above, the step of forming the metal layer of the coil part on the upper part of the pre-formed insulating layer and the step of laminating the insulating layer to cover the metal layer are sequentially repeated so that the two or more metal layers 310 and 320 are stacked A coil portion can be formed. That is, when the step of forming the metal layer is performed from the second turn, the metal layer is laminated on the pre-formed insulating layer. In the drawing, the step of forming the metal layer of the coil part and the step of laminating the insulating layer are shown twice, but the number of times of execution may be added depending on the capacity of the coil part to be manufactured. In this case, for the interlayer electrical connection of the metal layer, the first via hole may be formed on the upper surface of the additional insulating layer.

Referring to FIG. 7N, a process of forming a second via hole 420 in the uppermost insulating layer 220 after the process of forming the metal layer of the coil part and the step of stacking the insulating layer are repeated sequentially . The process of forming the second via hole 420 may be performed in the same manner as the process of forming the first via hole 410 described above. Here, the second via hole 420 may be formed to penetrate the insulating layer 220, and the diameter of the second via hole 420 may be larger than the diameter of the first via hole 410. The uppermost metal layer 320 and the electrode 510 are exposed and the external terminal is directly connected to the electrode 510. As a result of the second via hole 420 being formed, A voltage may be applied to a part thereof.

5 or FIG. 6, the electrode 520 is formed in the second via hole 420 after the electrode 510 is not formed in the above process. Step can be further performed.

Specifically, the electrode 520 may be laminated on the metal layer exposed by the second via hole 420. [ To this end, a seed layer of metal may be additionally deposited on the top surface of the best insulating layer. Then, a process in which a photosensitive material is coated on the seed film and an electrode-shaped opening is formed can be performed again. The openings may be formed on top of the portions exposed by the metal layer. Thereafter, an electrode may be formed by sequentially performing an electrode plating process on the opening, a process of removing the photosensitive material, and a process of etching the seed film. Electrode plating may be performed by electrolytic plating or electroless plating. Further, when the electrode has a structure in which two or more metal layers are laminated, the metal constituting each metal layer may be sequentially plated. Further, if necessary, a step of reflowing the plated metal layer to make the protruding metal into a sphere shape may be further performed.

Alternatively, the electrode 520 may be formed using a Ball Drop Attachment method. Specifically, the metal mask is placed so that the openings of the metal mask can correspond to the formed second via holes 420, and the openings of the metal masks are adhered to the openings of the metal mask in such a manner that a spherical solder ball is dropped The electrode 520 may be formed through a post-heating process. Here, a flux may be applied to the second via hole 420 so that the ball can be easily dropped. For this purpose, a flux mask may be separately used.

The second insulating layer 220 forming the second via hole 420 may cover a part of the upper portion of the second metal layer 320 so that the ball dropped through the opening of the metal mask is in a predetermined position The portion of the second metal layer 320 exposed through the via hole 420).

The method of forming the electrode 520 using the ball drop attachment method is simpler and easier than the plating method, so that the productivity of the coil component 10 can be improved.

Meanwhile, before or after the above-described processes are started, a process in which the substrate 110 is cut and processed to a desired size can be performed. Although an example is described below, the order of the steps of cutting and processing the substrate 110 and the series of steps of laminating the insulating layer and the coil part on the substrate 110 is not limited thereto.

Thereafter, the fixing tape is peeled off and the cut end of the substrate 110 is processed, so that a compact coil part in the form of a chip can be manufactured.

When the coil component 10 is formed by the above-described method, since a plurality of coil components 10 of the same shape can be formed in one step, the productivity of the coil component 10 can be greatly improved, Can be greatly reduced.

While the present invention has been described with reference to specific embodiments, it is to be understood that the invention is not limited to the disclosed embodiments. The scope of the invention is defined by the appended claims rather than by the foregoing description. . Skilled artisans may implement the pattern of features that have not been explicitly described in combination, substitution of the disclosed embodiments, but which, too, do not depart from the scope of the present invention. It will be apparent to those skilled in the art that various changes and modifications may be readily made without departing from the spirit and scope of the invention as defined by the appended claims.

10, 10a: coil part 100: substrate
110: plate 120: buffer layer
200: insulating part 210: first insulating layer
220: second insulating layer 300: coil part
310: first metal layer 320: second metal layer
410: first via hole 420: second via hole
510, 520: electrode 710: seed film

Claims (18)

Board;
A buffer layer provided on one surface of the substrate;
An insulating layer stacked on the buffer layer and including at least one insulating layer; And
And a coil portion provided inside the insulating layer and including at least one metal layer electrically connected to the outside to form an electromagnetic field,
Wherein the insulating layer includes a second via hole for exposing a part of the metal layer to the outside,
And an electrode formed inside the second via hole and stacked on the metal layer,
Wherein the electrode is laminated on the metal layer before the insulating layer is laminated after the metal layer is laminated or laminated on the metal layer located inside the second via hole after the formation of the second via hole,
Wherein the coil portion is electrically connected to the external terminal by an external terminal being in contact with the electrode. The method according to claim 1,
Wherein the substrate is glass or silicon,
Wherein the buffer layer is one of an epoxy resin, a polyimide resin, and a synthetic resin. 3. The method of claim 2,
Wherein the substrate is thinner than the raw material by a backgrinding process, and the thickness of the substrate is 50 占 퐉 or more and 200 占 퐉 or less. The method according to claim 1,
A seed film in the form of a metal film is formed on one surface of the buffer layer,
Wherein the metal layer of the lowest layer among the metal layers is laminated on the seed film. 5. The method of claim 4,
Wherein the buffer layer is formed in a liquid state on the substrate,
And the thickness of the buffer layer is not less than 1 占 퐉 and not more than 100 占 퐉. The method according to claim 1,
And the second via hole exposes part or all of the metal layer in the width direction of the pattern. The method according to claim 1,
And the electrode is laminated on the metal layer immediately after formation of the metal layer disposed inside the second via hole. The method according to claim 1,
Wherein the electrode is formed of a different metal from the metal layer. The method according to claim 1,
The insulating layer including the second via hole covers a part of the metal layer located inside the second via hole,
And a portion of the electrode covers the upper surface of the insulating layer including the second via hole. The method according to claim 1,
Wherein the electrode is formed by dropping a metal ball on the second via hole and then performing a heat treatment. The method according to claim 1,
Wherein a plurality of the insulating layer and the metal layer are provided,
A first via hole is formed on the outer surface of one of the insulating layers,
Wherein the metal layer provided inside the insulating layer and the metal layer provided inside the insulating layer disposed outside the insulating layer are electrically connected through the first via hole. Preparing a substrate;
Providing a buffer layer on one side of the substrate;
Forming a metal layer having a predetermined pattern for forming an electromagnetic field on one side of the buffer layer;
Laminating an insulating layer covering the metal layer;
Forming a second via hole exposing a portion of the uppermost metal layer on the upper surface of the uppermost insulating layer; And
And forming an electrode to be laminated on an upper surface of the uppermost metal layer,
The step of forming the metal layer and the step of laminating the insulating layer are performed one or more times,
The metal layer is laminated on the pre-formed insulating layer from the time when the step of forming the metal layer is performed twice,
The electrode
The uppermost metal layer may be laminated or stacked on the uppermost metal layer before the uppermost insulating layer is laminated,
And a second metal layer formed on the uppermost metal layer located inside the second via hole after the formation of the second via hole
A method of manufacturing a coil component. 13. The method of claim 12,
Wherein the substrate is glass or silicon,
Wherein the buffer layer is one of an epoxy resin, a polyimide resin, and a synthetic resin. 13. The method of claim 12,
And forming a seed film on one surface of the buffer layer. 13. The method of claim 12,
The forming of the metal layer may include:
Forming a seed layer on the buffer layer or the insulating layer;
Applying a photosensitive material on an upper surface of the seed layer;
Forming an opening of the predetermined pattern in the photosensitive material through a photolithography process;
Electroplating or electroless-plating the metal layer on the opening; And
Removing the photosensitive material, and etching the seed film according to the pattern of the metal layer. 13. The method of claim 12,
When the step of forming the metal layer and the step of laminating the insulating layer are repeatedly performed,
After the insulating layer is stacked, forming a first via hole in the insulating layer for electrically connecting metal layers adjacent to each other,
And the metal layers adjacent to each other are electrically connected through the first via hole. 17. The method of claim 16,
Wherein forming the first via hole or the second via hole comprises:
Exposing an upper surface of the insulating layer in a pattern of via holes;
Developing and recessing the exposed portion; And
And heat treating the recessed upper surface of the insulating layer. 13. The method of claim 12,
The electrode
And the metal balls are dropped into the second via holes and then heat-treated.

Images