KR101602924B1 - 다-구역 슬러리 공급을 구비한 화학-기계적 연마 - Google Patents

다-구역 슬러리 공급을 구비한 화학-기계적 연마 Download PDF

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Publication number
KR101602924B1
KR101602924B1 KR1020117001099A KR20117001099A KR101602924B1 KR 101602924 B1 KR101602924 B1 KR 101602924B1 KR 1020117001099 A KR1020117001099 A KR 1020117001099A KR 20117001099 A KR20117001099 A KR 20117001099A KR 101602924 B1 KR101602924 B1 KR 101602924B1
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South Korea
Prior art keywords
fluid
layer
distribution
fluid distribution
mechanical polishing
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Korean (ko)
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KR20110020915A (ko
Inventor
페르갈 오'무레
스티브 슐츠
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노벨러스 시스템즈, 인코포레이티드
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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/11—Lapping tools
    • B24B37/12—Lapping plates for working plane surfaces
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B57/00—Devices for feeding, applying, grading or recovering grinding, polishing or lapping agents
    • B24B57/02—Devices for feeding, applying, grading or recovering grinding, polishing or lapping agents for feeding of fluid, sprayed, pulverised, or liquefied grinding, polishing or lapping agents
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P52/00—Grinding, lapping or polishing of wafers, substrates or parts of devices

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  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
KR1020117001099A 2008-06-16 2009-06-15 다-구역 슬러리 공급을 구비한 화학-기계적 연마 Active KR101602924B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US12/140,035 US8128461B1 (en) 2008-06-16 2008-06-16 Chemical mechanical polishing with multi-zone slurry delivery
US12/140,035 2008-06-16

Publications (2)

Publication Number Publication Date
KR20110020915A KR20110020915A (ko) 2011-03-03
KR101602924B1 true KR101602924B1 (ko) 2016-03-11

Family

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Application Number Title Priority Date Filing Date
KR1020117001099A Active KR101602924B1 (ko) 2008-06-16 2009-06-15 다-구역 슬러리 공급을 구비한 화학-기계적 연마

Country Status (5)

Country Link
US (1) US8128461B1 (https=)
JP (1) JP5450613B2 (https=)
KR (1) KR101602924B1 (https=)
CN (1) CN102119070B (https=)
WO (1) WO2010005702A1 (https=)

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JP5586826B2 (ja) 2007-09-28 2014-09-10 京セラ株式会社 携帯電子機器
DE102010033256A1 (de) * 2010-07-29 2012-02-02 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Methode zur Erzeugung gezielter Strömungs- und Stromdichtemuster bei der chemischen und elektrolytischen Oberflächenbehandlung
WO2014109929A1 (en) 2013-01-11 2014-07-17 Applied Materials, Inc Chemical mechanical polishing apparatus and methods
JP6547100B2 (ja) * 2014-02-25 2019-07-24 国立大学法人九州大学 複合加工装置並びに該装置により加工された加工物
KR102587473B1 (ko) * 2016-02-08 2023-10-11 어플라이드 머티어리얼스, 인코포레이티드 화학적 연마를 위한 시스템들, 장치, 및 방법들
US10434630B2 (en) * 2016-05-18 2019-10-08 Graco Minnesota Inc. Vapor abrasive blasting system with closed loop flow control
US10864612B2 (en) * 2016-12-14 2020-12-15 Taiwan Semiconductor Manufacturing Company, Ltd. Polishing pad and method of using
US11679468B2 (en) * 2019-05-16 2023-06-20 Taiwan Semiconductor Manufacturing Co., Ltd. Chemical-mechanical polishing system and method
US11693435B2 (en) * 2020-06-25 2023-07-04 Applied Materials, Inc. Ethercat liquid flow controller communication for substrate processing systems
CN112264928A (zh) * 2020-10-23 2021-01-26 长江存储科技有限责任公司 一种化学机械研磨设备
US11819976B2 (en) * 2021-06-25 2023-11-21 Applied Materials, Inc. Spray system for slurry reduction during chemical mechanical polishing (cmp)

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US5658185A (en) * 1995-10-25 1997-08-19 International Business Machines Corporation Chemical-mechanical polishing apparatus with slurry removal system and method
JPH1094965A (ja) * 1996-09-24 1998-04-14 Sony Corp 化学的機械研磨装置
US5816900A (en) * 1997-07-17 1998-10-06 Lsi Logic Corporation Apparatus for polishing a substrate at radially varying polish rates
JPH11170162A (ja) * 1997-12-12 1999-06-29 Speedfam Co Ltd 平面研磨用定盤
JPH11285962A (ja) * 1998-04-06 1999-10-19 Sony Corp 研磨パッド、研磨装置および研磨方法
US6220934B1 (en) * 1998-07-23 2001-04-24 Micron Technology, Inc. Method for controlling pH during planarization and cleaning of microelectronic substrates
US6494765B2 (en) * 2000-09-25 2002-12-17 Center For Tribology, Inc. Method and apparatus for controlled polishing
US20020072307A1 (en) * 2000-12-13 2002-06-13 Fruitman Clinton O. Apparatus and method for chemical mechanical planarization using a fixed-abrasive polishing pad
US6991512B2 (en) * 2001-03-30 2006-01-31 Lam Research Corporation Apparatus for edge polishing uniformity control
US6652366B2 (en) * 2001-05-16 2003-11-25 Speedfam-Ipec Corporation Dynamic slurry distribution control for CMP
US6572445B2 (en) * 2001-05-16 2003-06-03 Speedfam-Ipec Multizone slurry delivery for chemical mechanical polishing tool
US7314402B2 (en) * 2001-11-15 2008-01-01 Speedfam-Ipec Corporation Method and apparatus for controlling slurry distribution
US20030134576A1 (en) * 2002-01-17 2003-07-17 Saket Chadda Method for polishing copper on a workpiece surface
US6722946B2 (en) * 2002-01-17 2004-04-20 Nutool, Inc. Advanced chemical mechanical polishing system with smart endpoint detection
US6942546B2 (en) 2002-01-17 2005-09-13 Asm Nutool, Inc. Endpoint detection for non-transparent polishing member
US6790128B1 (en) * 2002-03-29 2004-09-14 Lam Research Corporation Fluid conserving platen for optimizing edge polishing
JP2004082270A (ja) * 2002-08-27 2004-03-18 Fujitsu Ltd 研磨パッド及びこの研磨パッドを用いた研磨装置、研磨方法
US6705928B1 (en) * 2002-09-30 2004-03-16 Intel Corporation Through-pad slurry delivery for chemical-mechanical polish
US7018273B1 (en) 2003-06-27 2006-03-28 Lam Research Corporation Platen with diaphragm and method for optimizing wafer polishing
US6918824B2 (en) 2003-09-25 2005-07-19 Novellus Systems, Inc. Uniform fluid distribution and exhaust system for a chemical-mechanical planarization device
US6951597B2 (en) * 2003-10-31 2005-10-04 Novellus Systems, Inc. Dynamic polishing fluid delivery system for a rotational polishing apparatus
KR20060010194A (ko) * 2004-07-27 2006-02-02 주식회사 하이닉스반도체 슬러리 공급관 일체형 연마압반을 구비한 화학적 기계적연마장치
US7182677B2 (en) * 2005-01-14 2007-02-27 Applied Materials, Inc. Chemical mechanical polishing pad for controlling polishing slurry distribution
US7632170B2 (en) * 2007-06-25 2009-12-15 Novellus Systems, Inc. CMP apparatuses with polishing assemblies that provide for the passive removal of slurry

Also Published As

Publication number Publication date
CN102119070A (zh) 2011-07-06
JP2011524264A (ja) 2011-09-01
WO2010005702A1 (en) 2010-01-14
US8128461B1 (en) 2012-03-06
JP5450613B2 (ja) 2014-03-26
KR20110020915A (ko) 2011-03-03
CN102119070B (zh) 2014-06-25

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